Methods and systems for determining a critical dimension and a thin film characteristic of a specimen

ABSTRACT

Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, critical dimension and a thin film characteristic. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

PRIORITY CLAIM

[0001] This application claims priority to U.S. Provisional ApplicationNo. 60/234,323 entitled “Methods and Systems for SemiconductorFabrication Processes,” filed Sep. 20, 2000.

BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] This invention generally relates to methods and systems forsemiconductor fabrication processes. Certain embodiments relate to amethod and a system for evaluating and/or controlling a semiconductorfabrication process by determining at least two properties of aspecimen.

[0004] 2. Description of the Related Art

[0005] Fabrication of semiconductor devices such as logic and memorydevices typically includes a number of processes that may be used toform various features and multiple levels or layers of semiconductordevices on a surface of a semiconductor wafer or another appropriatesubstrate. For example, lithography is a process that typically involvestransferring a pattern to a resist arranged on a surface of asemiconductor wafer. Additional examples of semiconductor fabricationprocesses may include chemical-mechanical polishing, etch, deposition,ion implantation, plating, and cleaning. Semiconductor devices aresignificantly smaller than a typical semiconductor wafer or substrate,and an array of semiconductor devices may be formed on a semiconductorwafer. After processing is complete, the semiconductor wafer may beseparated into individual semiconductor devices.

[0006] Semiconductor fabrication processes, however, are among the mostsophisticated and complex processes used in manufacturing. In order toperform efficiently, semiconductor fabrication processes may requirefrequent monitoring and careful evaluation. For example, semiconductorfabrication processes may introduce a number of defects (e.g.,non-uniformities) into a semiconductor device. As an example, defectsmay include contamination introduced to a wafer during a semiconductorfabrication process by particles in process chemicals and/or in a cleanroom environment. Such defects may adversely affect the performance ofthe process to an extent that overall yield of the fabrication processmay be reduced below acceptable levels. Therefore, extensive monitoringand evaluation of semiconductor fabrication processes may typically beperformed to ensure that the process is within design tolerance and toincrease the overall yield of the process. Ideally, extensive monitoringand evaluation of the process may take place both during processdevelopment and during process control of semiconductor fabricationprocesses.

[0007] As features sizes of semiconductor devices continue to shrink, aminimum feature size that may be fabricated may often be limited by theperformance characteristics of a semiconductor fabrication process.Examples of performance characteristics of a semiconductor fabricationprocess include, but are not limited to, resolution capability, acrosschip variations, and across wafer variations. In optical lithography,for example, performance characteristics such as resolution capabilityof a lithography process may be limited by the quality of the resistapplication, the performance of the resist material, the performance ofthe exposure tool, and the wavelength of light used to expose theresist. The ability to resolve a minimum feature size, however, may alsobe strongly dependent on other critical parameters of the lithographyprocess such as a temperature of a post exposure bake process and anexposure dose of an exposure process. As such, controlling theparameters of processes that may be critical to the resolutioncapability of a semiconductor fabrication process such as a lithographyprocess is becoming increasingly important to the successful fabricationof semiconductor devices.

[0008] As the dimensions of semiconductor devices continue to shrinkwith advances in semiconductor materials and processes, the ability toexamine microscopic features and to detect microscopic defects has alsobecome increasingly important to the successful fabrication ofsemiconductor devices. Significant research has been focused onincreasing the resolution limit of metrology and/or inspection toolsused to examine microscopic features and defects. There are severaldisadvantages, however, in using the currently available methods andsystems for metrology and/or inspection of specimens fabricated bysemiconductor fabrication processes. For example, multiple stand-alonemetrology/inspection systems may be used for metrology and/or inspectionof specimens fabricated by such processes. As used herein, “stand-alonemetrology/inspection system” may generally refer a system that is notcoupled to a process tool and is operated independently of any otherprocess tools and/or metrology/inspection systems. Multiplemetrology/inspection systems, however, may occupy a relatively largeamount of clean room space due to the footprints of each of themetrology and/or inspection systems.

[0009] In addition, testing time and process delays associated withmeasuring and/or inspecting a specimen with multiplemetrology/inspection systems may increase the overall cost ofmanufacturing and the manufacturing time for fabricating a semiconductordevice. For example, process tools may often be idle while metrologyand/or inspection of a specimen is performed such that the process maybe evaluated before additional specimens are processed therebyincreasing manufacturing delays. Furthermore, if processing problems cannot be detected before additional wafers have been processed, wafersprocessed during this time may need to be scrapped, which increases theoverall cost of manufacturing. Additionally, buying multiplemetrology/inspection systems increases the cost of fabrication.

[0010] In an additional example, for in situ metrology and/or inspectionusing multiple currently available systems, determining a characteristicof a specimen during a process may be difficult if not impossible. Forexample, measuring and/or inspecting a specimen with multiple currentlyavailable systems during a lithography process may introduce a delaytime between or after process steps of the process. If the delay time isrelatively long, the performance of the resist may be adverselyaffected, and the overall yield of semiconductor devices may be reduced.As such, there may also be limitations on process enhancement, control,and yield of semiconductor fabrication processes due to the limitationsassociated with metrology and/or inspection using multiple currentlyavailable systems. Process enhancement, control, and yield may also belimited by an increased potential for contamination associated withmetrology and/or inspection using multiple currently availablemetrology/inspection systems. In addition, there may be practical limitsto using multiple metrology/inspection systems in semiconductormanufacturing processes. In an example, for in situ metrology and/orinspection using multiple currently available systems, integratingmultiple metrology/inspection systems into a process tool or a clustertool may be difficult due to the availability of space within the tool.

SUMMARY OF THE INVENTION

[0011] An embodiment relates to a system that may be configured todetermine at least two properties of a specimen. The system may includea stage configured to support the specimen. The system may also includea measurement device coupled to the stage. The measurement device mayinclude an illumination system configured to direct energy toward asurface of the specimen. The measurement device may also include adetection system coupled to the illumination system. The detectionsystem may be configured to detect energy propagating from the surfaceof the specimen. The measurement device may also be configured togenerate one or more output signals in response to the detected energy.The system may also include a processor coupled to the measurementdevice. The processor may be configured to determine at least a firstproperty and a second property of the specimen from the one or moreoutput signals.

[0012] In an embodiment, the first property may include a criticaldimension of the specimen. The second property may include overlaymisregistration of the specimen. In addition, the processor may beconfigured to determine a third and/or a fourth property of the specimenfrom the one or more output signals. For example, a third property ofthe specimen may include a presence of defects on the specimen, and thefourth property of the specimen may include a flatness measurement ofthe specimen. In an embodiment, the measurement device may include anon-imaging scatterometer, a scatterometer, a spectroscopicscatterometer, a reflectometer, a spectroscopic reflectometer, anellipsometer, a spectroscopic ellipsometer, a bright field imagingdevice, a dark field imaging device, a bright field and dark fieldimaging device, a bright field non-imaging device, a dark fieldnon-imaging device, a bright field and dark field non-imaging device, acoherence probe microscope, an interference microscope, an opticalprofilometer, or any combination thereof. In this manner, themeasurement device may be configured to function as a single measurementdevice or as multiple measurement devices. Because multiple measurementdevices may be integrated into a single measurement device of thesystem, optical elements of a first measurement device, for example, mayalso be optical elements of a second measurement device.

[0013] In an embodiment, the processor may include a local processorcoupled to the measurement device and/or a remote controller computercoupled to the local processor. The local processor may be configured toat least partially process the one or more output signals. The remotecontroller computer may be configured to receive the at least partiallyprocessed one or more output signals from the local processor. Inaddition, the remote controller computer may be configured to determineat least the first property and the second property of the specimen fromthe at least partially processed one or more output signals.Furthermore, the remote controller computer may be configured todetermine the third property and/or the fourth property of the specimenfrom the at least partially processed one or more output signals. In anadditional embodiment, the remote controller computer may be coupled toa process tool such as a semiconductor fabrication process tool. In thismanner, the remote controller computer may be further configured toalter a parameter of one or more instruments coupled to thesemiconductor fabrication process tool in response to at least thedetermined first or second property of the specimen using an in situcontrol technique, a feedback control technique, or a feedforwardcontrol technique.

[0014] An additional embodiment relates to a method for determining atleast two properties of a specimen. The method may include disposing aspecimen upon a stage. The stage may be coupled to a measurement device.The measurement device may include an illumination system and adetection system. In addition, the method may include directing energytoward a surface of the specimen. The method may also include detectingenergy propagating from the surface of the specimen. The method mayfurther include generating one or more output signals in response to thedetected energy. Furthermore, the method may include processing the oneor more output signals to determine at least a first property and asecond property of the specimen.

[0015] In an embodiment, the first property may include a criticaldimension of the specimen. The second property may include overlaymisregistration of the specimen. In addition, the method may furtherinclude processing the one or more output signals to determine a thirdand/or a fourth property of the specimen. For example, a third and afourth property of the specimen may include a presence of defects on thespecimen and a flatness measurement of the specimen. In an additionalembodiment, a semiconductor device may be fabricated by the method. Forexample, the method may include forming a portion of a semiconductordevice upon the specimen.

[0016] In an embodiment, processing the one or more output signals todetermine at least a first property and a second property of thespecimen may include at least partially processing the one or moreoutput signals using a local processor. The local processor may becoupled to the measurement device. Processing the one or more outputsignals may also include sending the partially processed one or moreoutput signals from the local processor to a remote controller computer.In addition, processing the one or more output signals may includefurther processing the partially processed one or more output signalsusing the remote controller computer. In an additional embodiment, theremote controller computer may be coupled to a process tool such as asemiconductor fabrication process tool. In this manner, the method mayinclude altering a parameter of one or more instruments coupled to theprocess tool using the remote controller computer in response to atleast the determined first or second property of the specimen. Alteringthe parameter of the instruments may include using an in situ controltechnique, a feedback control technique, or a feedforward controltechnique.

[0017] Additional embodiments relate to a computer-implemented methodfor controlling a system configured to determine at least two propertiesof a specimen. The system may include a measurement device. In thismanner, controlling the system may include controlling the measurementdevice. In addition, the measurement device may include an illuminationsystem and a detection system. The measurement device may also becoupled to a stage. Controlling the measurement device may includecontrolling the illumination system to direct energy toward a surface ofthe specimen. Additionally, controlling the measurement device mayinclude controlling the detection system to detect energy propagatingfrom the surface of the specimen. The method may further includegenerating one or more output signals in response to the detectedenergy. The computer-implemented method may further include processingthe one or more output signals to determine at least a first propertyand a second property of the specimen. For example, the first propertymay include a critical dimension of the specimen. Furthermore, thesecond property may include overlay misregistration of the specimen. Thecomputer-implemented method may also include processing the one or moreoutput signals to determine a third and/or fourth properties of thespecimen. In an example, the third and fourth properties of the specimenmay include a presence of defects on the specimen and a flatnessmeasurement of the specimen.

[0018] An embodiment relates to a system configured to determine atleast two properties of a specimen. The system may include a stageconfigured to support the specimen. The system may also include ameasurement device coupled to the stage. The measurement device mayinclude an illumination system configured to direct energy toward asurface of the specimen. The measurement device may also include adetection system coupled to the illumination system. The detectionsystem may be configured to detect energy propagating from the surfaceof the specimen. The measurement device may also be configured togenerate one or more output signals in response to the detected energy.The system may also include a processor coupled to the measurementdevice. The processor may be configured to determine at least a firstproperty and a second property of the specimen from the one or moreoutput signals.

[0019] In an embodiment, the first property may include a presence ofdefects on specimen. The second property may include a thin filmcharacteristic of the specimen. In addition, the processor may beconfigured to determine other properties of the specimen from the one ormore output signals. In an embodiment, the measurement device mayinclude a non-imaging scatterometer, a scatterometer, a spectroscopicscatterometer, a reflectometer, a spectroscopic reflectometer, anellipsometer, a spectroscopic ellipsometer, a beam profile ellipsometer,a bright field imaging device, a dark field imaging device, a brightfield and dark field imaging device, a bright field non-imaging device,a dark field non-imaging device, a bright field and dark fieldnon-imaging device, a double dark field device, a dual beamspectrophotometer, a coherence probe microscope, an interferencemicroscope, an optical profilometer, or any combination thereof. In thismanner, the measurement device may be configured to function as a singlemeasurement device or as multiple measurement devices. Because multiplemeasurement devices may be integrated into a single measurement deviceof the system, optical elements of a first measurement device, forexample, may also be optical elements of a second measurement device.

[0020] In an embodiment, the processor may include a local processorcoupled to the measurement device and a remote controller computercoupled to the local processor. The local processor may be configured toat least partially process the one or more output signals. The remotecontroller computer may be configured to receive the at least partiallyprocessed one or more output signals from the processor. In addition,the remote controller computer may be configured to determine at leastthe first property and the second property of the specimen from the atleast partially processed one or more output signals. Furthermore, theremote controller computer may be configured to determine additionalproperties of the specimen from the at least partially processed one ormore output signals. In an additional embodiment, the remote controllercomputer may be coupled to a process tool such as a semiconductorfabrication process tool. In this manner, the remote controller computermay be further configured to alter a parameter of one or moreinstruments coupled to the process tool in response to at least thedetermined first or second property of the specimen using an in situcontrol technique, a feedback control technique, or a feedforwardcontrol technique.

[0021] An additional embodiment relates to a method for determining atleast two properties of a specimen. The method may include disposing aspecimen upon a stage. The stage may be coupled to a measurement device.The measurement device may include an illumination system and adetection system. In addition, the method may include directing energytoward a surface of the specimen. The method may also include detectingenergy propagating from the surface of the specimen. The method mayfurther include generating one or more output signals in response to thedetected energy. Furthermore, the method may include processing the oneor more output signals to determine at least a first property and asecond property of the specimen.

[0022] In an embodiment, the first property may include a presence ofdefects on specimen. The second property may include a thin filmcharacteristic of the specimen. In addition, the processor may beconfigured to determine other properties of the specimen from the one ormore output signals. In an additional embodiment, a semiconductor devicemay be fabricated by the method. For example, the method may includeforming a portion of a semiconductor device upon a specimen.

[0023] In an embodiment, processing the one or more output signals todetermine at least a first property and a second property of thespecimen may include at least partially processing the one or moreoutput signals using a local processor. The local processor may becoupled to the measurement device. Processing the one or more outputsignals may also include sending the partially processed one or moreoutput signals from the local processor to a remote controller computer.In addition, processing the one or more output signals may includefurther processing the partially processed one or more output signalsusing the remote controller computer. In an additional embodiment, theremote controller computer may be coupled to a process tool such as asemiconductor fabrication process tool. In this manner, the method mayinclude altering a parameter of one or more instruments coupled to theprocess tool using the remote controller computer in response to atleast the determined first or second property of the specimen. Alteringthe parameter of the instruments may include using an in situ controltechnique, a feedback control technique, or a feedforward controltechnique.

[0024] Additional embodiments relate to a computer-implemented methodfor controlling a system configured to determine at least two propertiesof a specimen. The system may include a measurement device. In thismanner, controlling the system may include controlling the measurementdevice. In addition, the measurement device may include an illuminationsystem and a detection system. The measurement device may also becoupled to a stage. Controlling the measurement device may includecontrolling the illumination system to direct energy toward a surface ofthe specimen. Additionally, controlling the measurement device mayinclude controlling the detection system to detect energy propagatingfrom the surface of the specimen. The method may also include generatingone or more output signals in response to the detected energy. Thecomputer-implemented method may further include processing the one ormore output signals to determine at least a first property and a secondproperty of the specimen. For example, the first property may include apresence of defects on specimen. The second property may include a thinfilm characteristic of the specimen. In addition, the processor may beconfigured to determine other properties of the specimen from the one ormore output signals.

[0025] An embodiment relates to a system configured to determine atleast two properties of a specimen. The system may include a stageconfigured to support the specimen. The system may also include ameasurement device coupled to the stage. The measurement device mayinclude an illumination system configured to direct energy toward asurface of the specimen. The measurement device may also include adetection system coupled to the illumination system. The detectionsystem may be configured to detect energy propagating from the surfaceof the specimen. The measurement device may also be configured togenerate one or more output signals in response to the detected energy.The system may also include a processor coupled to the measurementdevice. The processor may be configured to determine at least a firstproperty and a second property of the specimen from the one or moreoutput signals.

[0026] In an embodiment, the first property may include a presence ofdefects on specimen. The second property may include a criticaldimension of the specimen. In addition, the processor may be configuredto determine other properties of the specimen from the one or moreoutput signals. In an embodiment, the measurement device may include anon-imaging scatterometer, a scatterometer, a spectroscopicscatterometer, a reflectometer, a spectroscopic reflectometer, anellipsometer, a spectroscopic ellipsometer, a bright field imagingdevice, a dark field imaging device, a bright field and dark fieldimaging device, a bright field non-imaging device, a dark fieldnon-imaging device, a bright field and dark field non-imaging device, acoherence probe microscope, an interference microscope, an opticalprofilometer, or any combination thereof. In this manner, themeasurement device may be configured to function as a single measurementdevice or as multiple measurement devices. Because multiple measurementdevices may be integrated into a single measurement device of thesystem, optical elements of a first measurement device, for example, mayalso be optical elements of a second measurement device.

[0027] In an embodiment, the processor may include a local processorcoupled to the measurement device and a remote controller computercoupled to the local processor. The local processor may be configured toat least partially process the one or more output signals. The remotecontroller computer may be configured to receive the at least partiallyprocessed one or more output signals from the processor. In addition,the remote controller computer may be configured to determine at leastthe first property and the second property of the specimen from the atleast partially processed one or more output signals. Furthermore, theremote controller computer may be configured to determine additionalproperties of the specimen from the at least partially processed one ormore output signals. In an additional embodiment, the remote controllercomputer may be coupled to a process tool such as a semiconductorfabrication process tool. In this manner, the remote controller computermay be further configured to alter a parameter of one or moreinstruments coupled to the process tool in response to at least thedetermined first or second property of the specimen using an in situcontrol technique, a feedback control technique, and/or a feedforwardcontrol technique.

[0028] An additional embodiment relates to a method for determining atleast two properties of a specimen. The method may include disposing aspecimen upon a stage. The stage may be coupled to a measurement device.The measurement device may include an illumination system and adetection system. In addition, the method may include directing energytoward a surface of the specimen using the illumination system. Themethod may also include detecting energy propagating from the surface ofthe specimen using the detection system. The method may further includegenerating one or more output signals in response to the detectedenergy. Furthermore, the method may include processing the one or moreoutput signals to determine at least a first property and a secondproperty of the specimen.

[0029] In an embodiment, the first property may include a presence ofdefects on specimen. The second property may include a criticaldimension of the specimen. In addition, the processor may be configuredto determine other properties of the specimen from the one or moreoutput signals. In an additional embodiment, a semiconductor device maybe fabricated by the method. For example, the method may include forminga portion of a semiconductor device upon a specimen such as asemiconductor substrate.

[0030] In an embodiment, processing the one or more output signals todetermine at least a first property and a second property of thespecimen may include at least partially processing the one or moreoutput signals using a local processor. The local processor may becoupled to the measurement device. Processing the one or more outputsignals may also include sending the partially processed one or moreoutput signals from the local processor to a remote controller computer.In addition, processing the one or more output signals may includefurther processing the partially processed one or more output signalsusing the remote controller computer. In an additional embodiment, theremote controller computer may be coupled to a process tool such as asemiconductor fabrication process tool. In this manner, the method mayinclude altering a parameter of one or more instruments coupled to theprocess tool using the remote controller computer in response to atleast the determined first or second property of the specimen. Alteringthe parameter of the instruments may include using an in situ controltechnique, a feedback control technique, and/or a feedforward controltechnique.

[0031] Additional embodiments relate to a computer-implemented methodfor controlling a system configured to determine at least two propertiesof a specimen. The system may include a measurement device. In thismanner, controlling the system may include controlling the measurementdevice. In addition, the measurement device may include an illuminationsystem and a detection system. The measurement device may also becoupled to a stage. Controlling the measurement device may includecontrolling the illumination system to direct energy toward a surface ofthe specimen. Additionally, controlling the measurement device mayinclude controlling the detection system to detect energy propagatingfrom the surface of the specimen. The method may also include generatingone or more output signals in response to the detected energy. Thecomputer-implemented method may further include processing the one ormore output signals to determine at least a first property and a secondproperty of the specimen. For example, the first property may include apresence of defects on specimen. The second property may include acritical dimension of the specimen. In addition, the processor may beconfigured to determine other properties of the specimen from the one ormore output signals.

[0032] An embodiment relates to a system configured to determine atleast two properties of a specimen. The system may include a stageconfigured to support the specimen. The system may also include ameasurement device coupled to the stage. The measurement device mayinclude an illumination system configured to direct energy toward asurface of the specimen. The measurement device may also include adetection system coupled to the illumination system. The detectionsystem may be configured to detect energy propagating from the surfaceof the specimen. The measurement device may also be configured togenerate one or more output signals in response to the detected energy.The system may also include a processor coupled to the measurementdevice. The processor may be configured to determine at least a firstproperty and a second property of the specimen from the one or moreoutput signals.

[0033] In an embodiment, the first property may include a criticaldimension of the specimen. The second property may include a thin filmcharacteristic of the specimen. In addition, the processor may beconfigured to determine other properties of the specimen from the one ormore output signals. In an embodiment, the measurement device mayinclude a non-imaging scatterometer, a scatterometer, a spectroscopicscatterometer, a reflectometer, a spectroscopic reflectometer, anellipsometer, a spectroscopic ellipsometer, a beam profile ellipsometer,a dual beam spectrophotometer, a bright field imaging device, a darkfield imaging device, a bright field and dark field imaging device, abright field and/or dark field non-imaging device, a coherence probemicroscope, an interference microscope, an optical profilometer, or anycombination thereof. In this manner, the measurement device may beconfigured to function as a single measurement device or as multiplemeasurement devices. Because multiple measurement devices may beintegrated into a single measurement device of the system, opticalelements of a first measurement device, for example, may also be opticalelements of a second measurement device.

[0034] In an embodiment, the processor may include a local processorcoupled to the measurement device and/or a remote controller computercoupled to the local processor. The local processor may be configured toat least partially process the one or more output signals. The remotecontroller computer may be configured to receive the at least partiallyprocessed one or more output signals from the local processor. Inaddition, the remote controller computer may be configured to determineat least the first property and the second property of the specimen fromthe at least partially processed one or more output signals.Furthermore, the remote controller computer may be configured todetermine additional properties of the specimen from the at leastpartially processed one or more output signals. In an additionalembodiment, the remote controller computer may be coupled to a processtool such as a semiconductor fabrication process tool. In this manner,the remote controller computer may be further configured to alter aparameter of one or more instruments coupled to the process tool inresponse to at least the determined first or second property of thespecimen using an in situ control technique, a feedback controltechnique, and/or a feedforward control technique.

[0035] An additional embodiment relates to a method for determining atleast two properties of a specimen. The method may include disposing aspecimen upon a stage. The stage may be coupled to a measurement device.The measurement device may include an illumination system and adetection system. In addition, the method may include directing energytoward a surface of the specimen using the illumination system. Themethod may also include detecting energy propagating from the surface ofthe specimen using the detection system. The method may further includegenerating one or more output signals in response to the detectedenergy. Furthermore, the method may include processing the one or moreoutput signals to determine at least a first property and a secondproperty of the specimen.

[0036] In an embodiment, the first property may include a criticaldimension of the specimen. The second property may include a thin filmcharacteristic of the specimen. In addition, the processor may beconfigured to determine other properties of the specimen from the one ormore output signals. In an additional embodiment, a semiconductor devicemay be fabricated by the method. For example, the method may includeforming a portion of a semiconductor device upon a specimen such as asemiconductor substrate.

[0037] In an embodiment, processing the one or more output signals todetermine at least a first property and a second property of thespecimen may include at least partially processing the one or moreoutput signals using a local processor. The local processor may becoupled to the measurement device. Processing the one or more outputsignals may also include sending the partially processed one or moreoutput signals from the local processor to a remote controller computer.In addition, processing the one or more output signals may includefurther processing the partially processed one or more output signalsusing the remote controller computer. In an additional embodiment, theremote controller computer may be coupled to a process tool such as asemiconductor fabrication process tool. In this manner, the method mayinclude altering a parameter of one or more instruments coupled to theprocess tool using the remote controller computer in response to atleast the determined first or second property of the specimen. Alteringthe parameter of the instruments may include using an in situ controltechnique, a feedback control technique, and/or a feedforward controltechnique.

[0038] Additional embodiments relate to a computer-implemented methodfor controlling a system configured to determine at least two propertiesof a specimen. The system may include a measurement device. In thismanner, controlling the system may include controlling the measurementdevice. In addition, the measurement device may include an illuminationsystem and a detection system. The measurement device may also becoupled to a stage. Controlling the measurement device may includecontrolling the illumination system to direct energy toward a surface ofthe specimen. Additionally, controlling the measurement device mayinclude controlling the detection system to detect energy propagatingfrom the surface of the specimen. The method may also include generatingone or more output signals in response to the detected energy. Thecomputer-implemented method may further include processing the one ormore output signals to determine at least a first property and a secondproperty of the specimen. For example, the first property may include acritical dimension of the specimen. The second property may include athin film characteristic of the specimen. In addition, the processor maybe configured to determine other properties of the specimen from the oneor more output signals.

[0039] An embodiment relates to a system configured to determine atleast three properties of a specimen. The system may include a stageconfigured to support the specimen. The system may also include ameasurement device coupled to the stage. The measurement device mayinclude an illumination system configured to direct energy toward asurface of the specimen. The measurement device may also include adetection system coupled to the illumination system. The detectionsystem may be configured to detect energy propagating from the surfaceof the specimen. The measurement device may also be configured togenerate one or more output signals in response to the detected energy.The system may also include a processor coupled to the measurementdevice. The processor may be configured to determine at least a firstproperty, a second property and a third property of the specimen fromthe one or more output signals.

[0040] In an embodiment, the first property may include a criticaldimension of the specimen. The second property may include a presence ofdefects on the specimen. The third property may include a thin filmcharacteristic of the specimen. In addition, the processor may beconfigured to determine other properties of the specimen from the one ormore output signals. In an embodiment, the measurement device mayinclude a non-image imaging scatterometer, a scatterometer, aspectroscopic scatterometer, a reflectometer, a spectroscopicreflectometer, an ellipsometer, a spectroscopic ellipsometer, a beamprofile ellipsometer, a bright field imaging device, a dark fieldimaging device, a bright field and dark field imaging device, a brightfield and/or dark field non-imaging device, a coherence probemicroscope, an interference microscope, an optical profilometer, a dualbeam spectrophotometer, or any combination thereof. In this manner, themeasurement device may be configured to function as a single measurementdevice or as multiple measurement devices. Because multiple measurementdevices may be integrated into a single measurement device of thesystem, optical elements of a first measurement device, for example, mayalso be optical elements of a second measurement device.

[0041] In an embodiment, the processor may include a local processorcoupled to the measurement device and/or a remote controller computercoupled to the local processor. The local processor may be configured toat least partially process the one or more output signals. The remotecontroller computer may be configured to receive the at least partiallyprocessed one or more output signals from the processor. In addition,the remote controller computer may be configured to determine at leastthe first property, the second property and the third property of thespecimen from the at least partially processed one or more outputsignals. Furthermore, the remote controller computer may be configuredto determine additional properties of the specimen from the at leastpartially processed one or more output signals. In an additionalembodiment, the remote controller computer may be coupled to a processtool such as a semiconductor fabrication process tool. In this manner,the remote controller computer may be further configured to alter aparameter of one or more instruments coupled to the semiconductorfabrication process tool in response to at least the determined first,second, or third property of the specimen using an in situ controltechnique, a feedback control technique, and/or a feedforward controltechnique.

[0042] An additional embodiment relates to a method for determining atleast three properties of a specimen. The method may include disposing aspecimen upon a stage. The stage may be coupled to a measurement device.The measurement device may include an illumination system and adetection system. In addition, the method may include directing energytoward a surface of the specimen using the illumination system. Themethod may also include detecting energy propagating from the surface ofthe specimen using the detection system. The method may further includegenerating one or more output signals in response to the detectedenergy. Furthermore, the method may include processing the one or moreoutput signals to determine at least a first property, a secondproperty, and a third property of the specimen.

[0043] In an embodiment, the first property may include a criticaldimension of the specimen. The second property may include a presence ofdefects on the specimen. The third property may include a thin filmcharacteristic of the specimen. In addition, the processor may beconfigured to determine other properties of the specimen from the one ormore output signals. In an additional embodiment, a semiconductor devicemay be fabricated by the method. For example, the method may includeforming a portion of a semiconductor device upon a specimen such as asemiconductor substrate.

[0044] In an embodiment, processing the one or more output signals todetermine at least a first property, a second property and a thirdproperty of the specimen may include at least partially processing theone or more output signals using a local processor. The local processormay be coupled to the measurement device. Processing the one or moreoutput signals may also include sending the partially processed one ormore output signals from the local processor to a remote controllercomputer. In addition, processing the one or more output signals mayinclude further processing the partially processed one or more outputsignals using the remote controller computer. In an additionalembodiment, the remote controller computer may be coupled to a processtool such as a semiconductor fabrication process tool. In this manner,the method may include altering a parameter of one or more instrumentscoupled to the process tool using the remote controller computer inresponse to at least the determined first or second property of thespecimen. Altering the parameter of the instruments may include using anin situ control technique, a feedback control technique, and/or afeedforward control technique.

[0045] Additional embodiments relate to a computer-implemented methodfor controlling a system configured to determine at least threeproperties of a specimen. The system may include a measurement device.In this manner, controlling the system may include controlling themeasurement device. In addition, the measurement device may include anillumination system and a detection system. The measurement device mayalso be coupled to a stage. Controlling the measurement device mayinclude controlling the illumination system to direct energy toward asurface of the specimen. Additionally, controlling the measurementdevice may include controlling the detection system to detect energypropagating from the surface of the specimen. The method may alsoinclude generating one or more output signals in response to thedetected energy. The computer-implemented method may further includeprocessing the one or more output signals to determine at least a firstproperty, a second property and a third property of the specimen. Forexample, the first property may include a critical dimension of thespecimen. The second property may include a presence of defects on thespecimen. The third property may include a thin film characteristic ofthe specimen. In addition, the processor may be configured to determineother properties of the specimen from the one or more output signals.

[0046] An embodiment relates to a system configured to determine atleast two properties of a specimen. The system may include a stageconfigured to support the specimen. The system may also include ameasurement device coupled to the stage. The measurement device mayinclude an illumination system configured to direct energy toward asurface of the specimen. The measurement device may also include adetection system coupled to the illumination system. The detectionsystem may be configured to detect energy propagating from the surfaceof the specimen. The measurement device may also be configured togenerate one or more output signals in response to the detected energy.The system may also include a processor coupled to the measurementdevice. The processor may be configured to determine at least a firstproperty and a second property of the specimen from the one or moreoutput signals.

[0047] In an embodiment, the first property may include a presence ofmacro defects on the specimen. The second property may a presence ofmicro defects on the specimen. In addition, the processor may beconfigured to determine other properties of the specimen from the one ormore output signals. In an embodiment, the measurement device mayinclude a non-imaging scatterometer, a scatterometer, a spectroscopicscatterometer, a reflectometer, a spectroscopic reflectometer, anellipsometer, a spectroscopic ellipsometer, a bright field imagingdevice, a dark field imaging device, a bright field and dark fieldimaging device, a bright field and/or dark field non-imaging device, adouble dark field device, a coherence probe microscope, an interferencemicroscope, an optical profilometer, or any combination thereof. In thismanner, the measurement device may be configured to function as a singlemeasurement device or as multiple measurement devices. Because multiplemeasurement devices may be integrated into a single measurement deviceof the system, optical elements of a first measurement device, forexample, may also be optical elements of a second measurement device.

[0048] In an embodiment, the processor may include a local processorcoupled to the measurement device or a remote controller computercoupled to the local processor. The local processor may be configured toat least partially process the one or more output signals. The remotecontroller computer may be configured to receive the at least partiallyprocessed one or more output signals from the processor. In addition,the remote controller computer may be configured to determine at leastthe first property and the second property of the specimen from the atleast partially processed one or more output signals. Furthermore, theremote controller computer may be configured to determine additionalproperties of the specimen from the at least partially processed one ormore output signals. In an additional embodiment, the remote controllercomputer may be coupled to a process tool such as a semiconductorfabrication process tool. In this manner, the remote controller computermay be further configured to alter a parameter of one or moreinstruments coupled to the process tool in response to at least thedetermined first or second property of the specimen using an in situcontrol technique, a feedback control technique, and/or a feedforwardcontrol technique.

[0049] An additional embodiment relates to a method for determining atleast two properties of a specimen. The method may include disposing aspecimen upon a stage. The stage may be coupled to a measurement device.The measurement device may include an illumination system and adetection system. In addition, the method may include directing energytoward a surface of the specimen using the illumination system. Themethod may also include detecting energy propagating from the surface ofthe specimen using the detection system. The method may also includegenerating one or more output signals in response to the detectedenergy. Furthermore, the method may include processing the one or moreoutput signals to determine at least a first property and a secondproperty of the specimen.

[0050] In an embodiment, the first property may include a presence ofmacro defects on the specimen. The second property may be a presence ofmicro defects on the specimen. In addition, the processor may beconfigured to determine other properties of the specimen from the one ormore output signals. In an additional embodiment, a semiconductor devicemay be fabricated by the method. For example, the method may includeforming a portion of a semiconductor device upon a specimen such as asemiconductor substrate.

[0051] In an embodiment, processing the one or more output signals todetermine at least a first property and a second property of thespecimen may include at least partially processing the one or moreoutput signals using a local processor. The local processor may becoupled to the measurement device. Processing the one or more outputsignals may also include sending the partially processed one or moreoutput signals from the local processor to a remote controller computer.In addition, processing the one or more output signals may includefurther processing the partially processed one or more output signalsusing the remote controller computer. In an additional embodiment, theremote controller computer may be coupled to a process tool such as asemiconductor fabrication process tool. In this manner, the method mayinclude altering a parameter of one or more instruments coupled to theprocess tool using the remote controller computer in response to atleast the determined first or second property of the specimen. Alteringthe parameter of the instruments may include using an in situ controltechnique, a feedback control technique, and/or a feedforward controltechnique.

[0052] Additional embodiments relate to a computer-implemented methodfor controlling a system configured to determine at least two propertiesof a specimen. The system may include a measurement device. In thismanner, controlling the system may include controlling the measurementdevice. In addition, the measurement device may include an illuminationsystem and a detection system. The measurement device may also becoupled to a stage. Controlling the measurement device may includecontrolling the illumination system to direct energy toward a surface ofthe specimen. Additionally, controlling the measurement device mayinclude controlling the detection system to detect energy propagatingfrom the surface of the specimen. The method may also include generatingone or more output signals in response to the detected energy. Thecomputer-implemented method may further include processing the one ormore output signals to determine at least a first property and a secondproperty of the specimen. For example, the first property may include apresence of macro defects on the specimen. The second property may be apresence of micro defects on the specimen. In addition, the processormay be configured to determine other properties of the specimen from theone or more output signals.

[0053] An embodiment relates to a system configured to determine atleast three properties of a specimen. The system may include a stageconfigured to support the specimen. The system may also include ameasurement device coupled to the stage. The measurement device mayinclude an illumination system configured to direct energy toward asurface of the specimen. The measurement device may also include adetection system coupled to the illumination system. The detectionsystem may be configured to detect energy propagating from the surfaceof the specimen. The measurement device may also be configured togenerate one or more output signals in response to the detected energy.The system may also include a processor coupled to the measurementdevice. The processor may be configured to determine at least a firstproperty, a second property and a third property of the specimen fromthe one or more output signals.

[0054] In an embodiment, the first property may include a flatnessmeasurement of the specimen. The second property may include a presenceof defects on the specimen. The third property may include a thin filmcharacteristic of the specimen. In addition, the processor may beconfigured to determine other properties of the specimen from the one ormore output signals. In an embodiment, the measurement device mayinclude a non-imaging scatterometer, a scatterometer, a spectroscopicscatterometer, a reflectometer, a spectroscopic reflectometer, anellipsometer, a spectroscopic ellipsometer, a beam profile ellipsometer,a bright field and/or dark field imaging device, a bright field and/ordark field non-imaging device, a double dark field device, a coherenceprobe microscope, an interference microscope, an interferometer, anoptical profilometer, a dual beam spectrophotometer, or any combinationthereof. In this manner, the measurement device may be configured tofunction as a single measurement device or as multiple measurementdevices. Because multiple measurement devices may be integrated into asingle measurement device of the system, optical elements of a firstmeasurement device, for example, may also be optical elements of asecond measurement device.

[0055] In an embodiment, the processor may include a local processorcoupled to the measurement device and a remote controller computercoupled to the local processor. The local processor may be configured toat least partially process the one or more output signals. The remotecontroller computer may be configured to receive the at least partiallyprocessed one or more output signals from the processor. In addition,the remote controller computer may be configured to determine at leastthe first property, the second property and the third property of thespecimen from the at least partially processed one or more outputsignals. Furthermore, the remote controller computer may be configuredto determine additional properties of the specimen from the at leastpartially processed one or more output signals. In an additionalembodiment, the remote controller computer may be coupled to a processtool such as a semiconductor fabrication process tool. In this manner,the remote controller computer may be further configured to alter aparameter of one or more instruments coupled to the process tool inresponse to at least the determined first second or third property ofthe specimen using an in situ control technique, a feedback controltechnique, and/or a feedforward control technique.

[0056] An additional embodiment relates to a method for determining atleast three properties of a specimen. The method may include disposing aspecimen upon a stage. The stage may be coupled to a measurement device.The measurement device may include an illumination system and adetection system. In addition, the method may include directing energytoward a surface of the specimen using the illumination system. Themethod may also include detecting energy propagating from the surface ofthe specimen using the detection system. The method may further includegenerating one or more output signals in response to the detectedenergy. Furthermore, the method may include processing the one or moreoutput signals to determine at least a first property, a secondproperty, and a third property of the specimen.

[0057] In an embodiment, the first property may include a flatnessmeasurement of the specimen. The second property may include a presenceof defects on the specimen. The third property may include a thin filmcharacteristic of the specimen. In addition, the processor may beconfigured to determine other properties of the specimen from the one ormore output signals. In an additional embodiment, a semiconductor devicemay be fabricated by the method. For example, the method may includeforming a portion of a semiconductor device upon a specimen such as asemiconductor substrate.

[0058] In an embodiment, processing the one or more output signals todetermine at least a first property, a second property and a thirdproperty of the specimen may include at least partially processing theone or more output signals using a local processor. The local processormay be coupled to the measurement device. Processing the one or moreoutput signals may also include sending the partially processed one ormore output signals from the local processor to a remote controllercomputer. In addition, processing the one or more output signals mayinclude further processing the partially processed one or more outputsignals using the remote controller computer. In an additionalembodiment, the remote controller computer may be coupled to a processtool such as a semiconductor fabrication process tool. In this manner,the method may include altering a parameter of one or more instrumentscoupled to the process tool using the remote controller computer inresponse to at least the determined first or second property of thespecimen. Altering the parameter of the instruments may include using anin situ control technique, a feedback control technique, and/or afeedforward control technique.

[0059] Additional embodiments relate to a computer-implemented methodfor controlling a system configured to determine at least threeproperties of a specimen. The system may include a measurement device.In this manner, controlling the system may include controlling themeasurement device. In addition, the measurement device may include anillumination system and a detection system. The measurement device mayalso be coupled to a stage. Controlling the measurement device mayinclude controlling the illumination system to direct energy toward asurface of the specimen. Additionally, controlling the measurementdevice may include controlling the detection system to detect energypropagating from the surface of the specimen. The method may alsoinclude generating one or more output signals in response to thedetected energy. The computer-implemented method may further includeprocessing the one or more output signals to determine at least a firstproperty, a second property and a third property of the specimen. Forexample, the first property may include a flatness measurement of thespecimen. The second property may include a presence of defects on thespecimen. The third property may include a thin film characteristic ofthe specimen. In addition, the processor may be configured to determineother properties of the specimen from the one or more output signals.

[0060] An embodiment relates to a system configured to determine atleast two properties of a specimen. The system may include a stageconfigured to support the specimen. The system may also include ameasurement device coupled to the stage. The measurement device mayinclude an illumination system configured to direct energy toward asurface of the specimen. The measurement device may also include adetection system coupled to the illumination system. The detectionsystem may be configured to detect energy propagating from the surfaceof the specimen. The measurement device may also be configured togenerate one or more output signals in response to the detected energy.The system may also include a processor coupled to the measurementdevice. The processor may be configured to determine at least a firstproperty and a second property of the specimen from the detected light.

[0061] In an embodiment, the first property may include overlaymisregistration of the specimen. The second property may include aflatness measurement of the specimen. In addition, the processor may beconfigured to determine other properties of the specimen from the one ormore output signals. In an embodiment, the measurement device mayinclude a non-imaging scatterometer, a scatterometer, a spectroscopicscatterometer, a reflectometer, a spectroscopic reflectometer, aspectroscopic ellipsometer, a beam profile ellipsometer, a bright fieldimaging device, a dark field imaging device, a bright field and darkfield imaging device, a coherence probe microscope, an interferencemicroscope, an interferometer, an optical profilometer, a dual beamspectrophotometer, or any combination thereof. In this manner, themeasurement device may be configured to function as a single measurementdevice or as multiple measurement devices. Because multiple measurementdevices may be integrated into a single measurement device of thesystem, optical elements of a first measurement device, for example, mayalso be optical elements of a second measurement device.

[0062] In an embodiment, the processor may include a local processorcoupled to the measurement device and a remote controller computercoupled to the local processor. The local processor may be configured toat least partially process the one or more output signals. The remotecontroller computer may be configured to receive the at least partiallyprocessed one or more output signals from the processor. In addition,the remote controller computer may be configured to determine at leastthe first property and the second property of the specimen from the atleast partially processed one or more output signals. Furthermore, theremote controller computer may be configured to determine additionalproperties of the specimen from the at least partially processed one ormore output signals. In an additional embodiment, the remote controllercomputer may be coupled to a process tool such as a semiconductorfabrication process tool. In this manner, the remote controller computermay be further configured to alter a parameter of one or moreinstruments coupled to the process tool in response to at least thedetermined first or second property of the specimen using an in situcontrol technique, a feedback control technique, and/or a feedforwardcontrol technique.

[0063] An additional embodiment relates to a method for determining atleast two properties of a specimen. The method may include disposing aspecimen upon a stage. The stage may be coupled to a measurement device.The measurement device may include an illumination system and adetection system. In addition, the method may include directing energytoward a surface of the specimen using the illumination system. Themethod may also include detecting energy propagating from the surface ofthe specimen using the detection system. The method may further includegenerating one or more output signals in response to the detectedenergy. Furthermore, the method may include processing the one or moreoutput signals to determine at least a first property and a secondproperty of the specimen.

[0064] In an embodiment, the first property may include overlaymisregistration of the specimen. The second property may include aflatness measurement of the specimen. In addition, the processor may beconfigured to determine other properties of the specimen from the one ormore output signals. In an additional embodiment, a semiconductor devicemay be fabricated by the method. For example, the method may includeforming a portion of a semiconductor device upon a specimen such as asemiconductor substrate.

[0065] In an embodiment, processing the one or more output signals todetermine at least a first property and a second property of thespecimen may include at least partially processing the one or moreoutput signals using a local processor. The local processor may becoupled to the measurement device. Processing the one or more outputsignals may also include sending the partially processed one or moreoutput signals from the local processor to a remote controller computer.In addition, processing the one or more output signals may includefurther processing the partially processed one or more output signalsusing the remote controller computer. In an additional embodiment, theremote controller computer may be coupled to a process tool such as asemiconductor fabrication process tool. In this manner, the method mayinclude altering a parameter of one or more instruments coupled to theprocess tool using the remote controller computer in response to atleast the determined first or second property of the specimen. Alteringthe parameter of the instruments may include using an in situ controltechnique, a feedback control technique, and/or a feedforward controltechnique.

[0066] Additional embodiments relate to a computer-implemented methodfor controlling a system configured to determine at least two propertiesof a specimen. The system may include a measurement device. In thismanner, controlling the system may include controlling the measurementdevice. In addition, the measurement device may include an illuminationsystem and a detection system. The measurement device may also becoupled to a stage. Controlling the measurement device may includecontrolling the illumination system to direct energy toward a surface ofthe specimen. Additionally, controlling the measurement device mayinclude controlling the detection system to detect energy propagatingfrom the surface of the specimen. The method may also include generatingone or more output signals in response to the detected energy. Thecomputer-implemented method may further include processing the one ormore output signals to determine at least a first property and a secondproperty of the specimen. For example, the first property may includeoverlay misregistration of the specimen. The second property may includea flatness measurement of the specimen. In addition, the processor maybe configured to determine other properties of the specimen from the oneor more output signals.

[0067] An embodiment relates to a system configured to determine atleast two properties of a specimen. The system may include a stageconfigured to support the specimen. The system may also include ameasurement device coupled to the stage. The measurement device mayinclude an illumination system configured to direct energy toward asurface of the specimen. The measurement device may also include adetection system coupled to the illumination system. The detectionsystem may be configured to detect energy propagating from the surfaceof the specimen. The measurement device may also be configured togenerate one or more output signals in response to the detected energy.The system may also include a processor coupled to the measurementdevice. The processor may be configured to determine at least a firstproperty and a second property of the specimen from the one or moreoutput signals.

[0068] In an embodiment, the first property may include a characteristicof an implanted region of the specimen. The second property may includea presence of defects on the specimen. In addition, the processor may beconfigured to determine other properties of the specimen from the one ormore output signals. In an embodiment, the measurement device mayinclude a modulated optical reflectometer, an X-ray reflectance device,an eddy current device, a photo-acoustic device, a spectroscopicellipsometer, a spectroscopic reflectometer, a dual beamspectrophotometer, a non-imaging scatterometer, a scatterometer, aspectroscopic scatterometer, a reflectometer, an ellipsometer, anon-imaging bright field device, a non-imaging dark field device, anon-imaging bright field and dark field device, a bright field imagingdevice, a dark field imaging device, a bright field and dark fieldimaging device, or any combination thereof. In this manner, themeasurement device may be configured to function as a single measurementdevice or as multiple measurement devices. Because multiple measurementdevices may be integrated into a single measurement device of thesystem, optical elements of a first measurement device; for example, mayalso be optical elements of a second measurement device.

[0069] In an embodiment, the processor may include a local processorcoupled to the measurement device and a remote controller computercoupled to the local processor. The local processor may be configured toat least partially process the one or more output signals. The remotecontroller computer may be configured to receive the at least partiallyprocessed one or more output signals from the processor. In addition,the remote controller computer may be configured to determine at leastthe first property and the second property of the specimen from the atleast partially processed one or more output signals. Furthermore, theremote controller computer may be configured to determine additionalproperties of the specimen from the at least partially processed one ormore output signals. In an additional embodiment, the remote controllercomputer may be coupled to a process tool such as a semiconductorfabrication process tool. In this manner, the remote controller computermay be further configured to alter a parameter of one or moreinstruments coupled to the process tool in response to at least thedetermined first or second property of the specimen using an in situcontrol technique, a feedback control technique, and/or a feedforwardcontrol technique.

[0070] An additional embodiment relates to a method for determining atleast two properties of a specimen. The method may include disposing aspecimen upon a stage. The stage may be coupled to a measurement device.The measurement device may include an illumination system and adetection system. In addition, the method may include directing energytoward a surface of the specimen using the illumination system. Themethod may also include detecting energy propagating from the surface ofthe specimen using the detection system. The method may further includegenerating one or more output signals in response to the detectedenergy. Furthermore, the method may include processing the one or moreoutput signals to determine at least a first property and a secondproperty of the specimen.

[0071] In an embodiment, the first property may include a characteristicof an implanted region of the specimen. The second property may includea presence of defects on the specimen. In addition, the processor may beconfigured to determine other properties of the specimen from the one ormore output signals. In an additional embodiment, a semiconductor devicemay be fabricated by the method. For example, the method may includeforming a portion of a semiconductor device upon a specimen such as asemiconductor substrate.

[0072] In an embodiment, processing the one or more output signals todetermine at least a first property and a second property of thespecimen may include at least partially processing the one or moreoutput signals using a local processor. The local processor may becoupled to the measurement device. Processing the one or more outputsignals may also include sending the partially processed one or moreoutput signals from the local processor to a remote controller computer.In addition, processing the one or more output signals may includefurther processing the partially processed one or more output signalsusing the remote controller computer. In an additional embodiment, theremote controller computer may be coupled to a process tool such as asemiconductor fabrication process tool. In this manner, the method mayinclude altering a parameter of one or more instruments coupled to thesemiconductor fabrication process tool using the remote controllercomputer in response to at least the determined first or second propertyof the specimen. Altering the parameter of the instruments may includeusing an in situ control technique, a feedback control technique, and/ora feedforward control technique.

[0073] Additional embodiments relate to a computer-implemented methodfor controlling a system configured to determine at least two propertiesof a specimen. The system may include a measurement device. In thismanner, controlling the system may include controlling the measurementdevice. In addition, the measurement device may include an illuminationsystem and a detection system. The measurement device may also becoupled to a stage. Controlling the measurement device may includecontrolling the illumination system to direct energy toward a surface ofthe specimen. Additionally, controlling the measurement device mayinclude controlling the detection system to detect energy propagatingfrom the surface of the specimen. The method may also include generatingone or more output signals in response to the detected energy. Thecomputer-implemented method may further include processing the one ormore output signals to determine at least a first property and a secondproperty of the specimen. For example, the first property may include acharacteristic of an implanted region of the specimen. The secondproperty may include a presence of defects on the specimen. In addition,the processor may be configured to determine other properties of thespecimen from the one or more output signals.

[0074] An embodiment relates to a system configured to determine atleast two properties of a specimen. The system may include a stageconfigured to support the specimen. The system may also include ameasurement device coupled to the stage. The measurement device mayinclude an illumination system configured to direct energy toward asurface of the specimen. The measurement device may also include adetection system coupled to the illumination system. The detectionsystem may be configured to detect energy propagating from the surfaceof the specimen. The measurement device may be configured to generateone or more output signals in response to the detected light. The systemmay also include a processor coupled to the measurement device. Theprocessor may be configured to determine at least a first property and asecond property of the specimen from the one or more output signals.

[0075] In an embodiment, the first property may include an adhesioncharacteristic of the specimen. The second property may include athickness of the specimen. In addition, the processor may be configuredto determine other properties of the specimen from the one or moreoutput signals. In an embodiment, the measurement device may include aneddy current device, a photo-acoustic device, a spectroscopicellipsometer, an ellipsometer, an X-ray reflectometer, a grazing X-rayreflectometer, an X-ray diffractometer, or any combination thereof. Inthis manner, the measurement device may be configured to function as asingle measurement device or as multiple measurement devices. Becausemultiple measurement devices may be integrated into a single measurementdevice of the system, optical elements of a first measurement device,for example, may also be optical elements of a second measurementdevice.

[0076] In an embodiment, the processor may include a local processorcoupled to the measurement device and a remote controller computercoupled to the local processor. The local processor may be configured toat least partially process the one or more output signals. The remotecontroller computer may be configured to receive the at least partiallyprocessed one or more output signals from the local processor. Inaddition, the remote controller computer may be configured to determineat least the first property and the second property of the specimen fromthe at least partially processed one or more output signals.Furthermore, the remote controller computer may be configured todetermine additional properties of the specimen from the at leastpartially processed one or more output signals. In an additionalembodiment, the remote controller computer may be coupled to a processtool such as a semiconductor fabrication process tool. In this manner,the remote controller computer may be further configured to alter aparameter of one or more instruments coupled to the semiconductorfabrication process tool in response to at least the determined first orsecond property of the specimen using an in situ control technique, afeedback control technique, and/or a feedforward control technique.

[0077] An additional embodiment relates to a method for determining atleast two properties of a specimen. The method may include disposing aspecimen upon a stage. The stage may be coupled to a measurement device.The measurement device may include an illumination system and adetection system. In addition, the method may include directing energytoward a surface of the specimen using the illumination system. Themethod may also include detecting energy propagating from the surface ofthe specimen using the detection system. The method may further includegenerating one or more output signals in response to the detectedenergy. Furthermore, the method may include processing the one or moreoutput signals to determine at least a first property and a secondproperty of the specimen.

[0078] In an embodiment, the first property may include an adhesioncharacteristic of the specimen. The second property may include athickness of the specimen. In addition, the processor may be configuredto determine other properties of the specimen from the one or moreoutput signals. In an additional embodiment, a semiconductor device maybe fabricated by the method. For example, the method may include forminga portion of a semiconductor device upon a specimen such as asemiconductor substrate.

[0079] In an embodiment, processing the one or more output signals todetermine at least a first property and a second property of thespecimen may include at least partially processing the one or moreoutput signals using a local processor. The local processor may becoupled to the measurement device. Processing the one or more outputsignals may also include sending the partially processed one or moreoutput signals from the local processor to a remote controller computer.In addition, processing the one or more output signals may includefurther processing the partially processed one or more output signalsusing the remote controller computer. In an additional embodiment, theremote controller computer may be coupled to a process tool such as asemiconductor fabrication process tool. In this manner, the method mayinclude altering a parameter of one or more instruments coupled to theprocess tool using the remote controller computer in response to atleast the determined first or second property of the specimen. Alteringthe parameter of the instruments may include using an in situ controltechnique, a feedback control technique, and/or a feedforward controltechnique.

[0080] Additional embodiments relate to a computer-implemented methodfor controlling a system configured to determine at least two propertiesof a specimen. The system may include a measurement device. In thismanner, controlling the system may include controlling the measurementdevice. In addition, the measurement device may include an illuminationsystem and a detection system. The measurement device may also becoupled to a stage. Controlling the measurement device may includecontrolling the illumination system to direct energy toward a surface ofthe specimen. Additionally, controlling the measurement device mayinclude controlling the detection system to detect energy propagatingfrom the surface of the specimen. The method may also include generatingone or more output signals in response to the detected energy. Thecomputer-implemented method may further include processing the one ormore output signals to determine at least a first property and a secondproperty of the specimen. For example, the first property may include anadhesion characteristic of the specimen. The second property may includea thickness of the specimen. In addition, the processor may beconfigured to determine other properties of the specimen from the one ormore output signals.

[0081] An embodiment relates to a system configured to determine atleast two properties of a specimen. The system may include a stageconfigured to support the specimen. The system may also include ameasurement device coupled to the stage. The measurement device mayinclude an illumination system configured to direct energy toward asurface of the specimen. The measurement device may also include adetection system coupled to the illumination system. The detectionsystem may be configured to detect energy propagating from the surfaceof the specimen. The measurement device may be configured to generateone or more output signals in response to the detected energy. Thesystem may also include a processor coupled to the measurement device.The process may be configured to determine at least a first property anda second property of the specimen from the one or more output signals.

[0082] In an embodiment, the first property may include a concentrationof an element in the specimen. The second property may include athickness of the specimen. In addition, the processor may be configuredto determine other properties of the specimen from the one or moreoutput signals. In an embodiment, the measurement device may include aphoto-acoustic device, an X-ray reflectometer, a grazing X-rayreflectometer, an X-ray diffractometer, an eddy current device, aspectroscopic ellipsometer, an ellipsometer, or any combination thereof.In this manner, the measurement device may be configured to function asa single measurement device or as multiple measurement devices. Becausemultiple measurement devices may be integrated into a single measurementdevice of the system, optical elements of a first measurement device,for example, may also be optical elements of a second measurementdevice.

[0083] In an embodiment, the processor may include a local processorcoupled to the measurement device and a remote controller computercoupled to the local processor. The local processor may be configured toat least partially process the one or more output signals. The remotecontroller computer may be configured to receive the at least partiallyprocessed one or more output signals from the processor. In addition,the remote controller computer may be configured to determine at leastthe first property and the second property of the specimen from the atleast partially processed one or more output signals. Furthermore, theremote controller computer may be configured to determine additionalproperties of the specimen from the at least partially processed one ormore output signals. In an additional embodiment, the remote controllercomputer may be coupled to a process tool such as a semiconductorfabrication process tool. In this manner, the remote controller computermay be further configured to alter a parameter of one or moreinstruments coupled to the process tool in response to at least thedetermined first or second property of the specimen using an in situcontrol technique, a feedback control technique, and/or a feedforwardcontrol technique.

[0084] An additional embodiment relates to a method for determining atleast two properties of a specimen. The method may include disposing aspecimen upon a stage. The stage may be coupled to a measurement device.The measurement device may include an illumination system and adetection system. In addition, the method may include directing energytoward a surface of the specimen using the illumination system. Themethod may also include detecting energy propagating from the surface ofthe specimen using the detection system. The method may further includegenerating one or more output signals in response to the detectedenergy. Furthermore, the method may include processing the one or moreoutput signals to determine at least a first property and a secondproperty of the specimen.

[0085] In an embodiment, the first property may include a concentrationof an element in the specimen. The second property may include athickness of the specimen. In addition, the processor may be configuredto determine other properties of the specimen from the one or moreoutput signals. In an additional embodiment, a semiconductor device maybe fabricated by the method. For example, the method may include forminga portion of a semiconductor device upon a specimen such as asemiconductor substrate.

[0086] In an embodiment, processing the one or more output signals todetermine at least a first property and a second property of thespecimen may include at least partially processing the one or moreoutput signals using a local processor. The local processor may becoupled to the measurement device. Processing the one or more outputsignals may also include sending the partially processed one or moreoutput signals from the local processor to a remote controller computer.In addition, processing the one or more output signals may includefurther processing the partially processed one or more output signalsusing the remote controller computer. In an additional embodiment, theremote controller computer may be coupled to a process tool such as asemiconductor fabrication process tool. In this manner, the method mayinclude altering a parameter of one or more instruments coupled to theprocess tool using the remote controller computer in response to atleast the determined first or second property of the specimen. Alteringthe parameter of the instruments may include using an in situ controltechnique, a feedback control technique, and/or a feedforward controltechnique.

[0087] Additional embodiments relate to a computer-implemented methodfor controlling a system configured to determine at least two propertiesof a specimen. The system may include a measurement device. In thismanner, controlling the system may include controlling the measurementdevice. In addition, the measurement device may include an illuminationsystem and a detection system. The measurement device may also becoupled to a stage. Controlling the measurement device may includecontrolling the illumination system to direct energy toward a surface ofthe specimen. Additionally, controlling the measurement device mayinclude controlling the detection system to detect energy propagatingfrom the surface of the specimen. The method may also include generatingone or more output signals in response to the detected energy. Thecomputer-implemented method may further include processing the one ormore output signals to determine at least a first property and a secondproperty of the specimen. For example, the first property may include aconcentration of an element in the specimen. The second property mayinclude a thickness of the specimen. In addition, the processor may beconfigured to determine other properties of the specimen from the one ormore output signals.

[0088] An embodiment relates to a system coupled to a deposition tool.The deposition tool may be configured to form a layer of material on aspecimen. The layer of material may be formed on the specimen by thedeposition tool. The measurement device may be configured to determine acharacteristic of a layer of material prior to, during, or afterformation of the layer. The system may include a stage configured tosupport the specimen. The measurement device may include an illuminationsystem configured to direct energy toward a surface of the specimenprior to, during ,or after formation of the layer. The measurementdevice may also include a detection system coupled to the illuminationsystem. The detection system may be configured to detect energypropagating from the surface of the specimen prior to, during, or afterformation of the layer. The measurement device may be configured togenerate one or more output signals in response to the detected energy.The system may also include a processor coupled to the measurementdevice. The processor may be configured to determine a characteristic ofthe layer from the one or more output signals. The processor may also becoupled to the deposition tool. The processor may be configured to altera parameter of one or more instruments coupled to the deposition tool.Additionally, the processor may be configured to alter a parameter ofthe instruments coupled to the deposition tool in response to thedetermined characteristic of the formed layer.

[0089] In an embodiment, the measurement device may include anon-imaging scatterometer, a scatterometer, a spectroscopicscatterometer, a reflectometer, a spectroscopic reflectometer, anellipsometer, a spectroscopic ellipsometer, a bright field imagingdevice, a dark field imaging device, a bright field and dark fieldimaging device, a coherence probe microscope, an interferencemicroscope, an optical profilometer, or any combination thereof. In thismanner, the measurement device may be configured to function as a singlemeasurement device or as multiple measurement devices. Because multiplemeasurement devices may be integrated into a single measurement deviceof the system, optical elements of a first measurement device, forexample, may also be optical elements of a second measurement device.The deposition tool may include any tool configured to form a layer upona semiconductor substrate. Deposition tools may include chemical vapordeposition tools, physical vapor deposition tool, atomic layerdeposition tools, and electroplating tools.

[0090] In an embodiment, the processor may include a local processorcoupled to the measurement device and/or the deposition tool and aremote controller computer coupled to the local processor. The localprocessor may be configured to at least partially process the one ormore output signals. The remote controller computer may be configured toreceive the at least partially processed one or more output signals fromthe processor. In addition, the remote controller computer may beconfigured to determine a characteristic of the formed layer on thespecimen from the at least partially processed one or more outputsignals. Furthermore, the remote controller computer may be configuredto determine additional properties of the specimen from the at leastpartially processed one or more output signals. The remote controllercomputer may also be coupled to a deposition tool. In this manner, theremote controller computer may be further configured to alter aparameter of one or more instruments coupled to the deposition tool inresponse to at least the determined characteristic of a layer formedupon the specimen using an in situ control technique, a feedback controltechnique, and/or a feedforward control technique.

[0091] An additional embodiment relates to a method of evaluating acharacteristic of a layer formed upon a specimen. The method may includedepositing a layer upon a specimen using a deposition tool. Themeasurement device may include an illumination system and a detectionsystem. In addition, the method may include directing energy toward asurface of the specimen using the illumination system. The method mayalso include detecting energy propagating from the surface of thespecimen using the detection system. The method may further includegenerating one or more output signals in response to the detected light.Furthermore, the method may include processing the one or more outputsignals to determine a characteristic of the formed layer.

[0092] In an embodiment, the processor may be configured to determine acharacteristic of the formed layer. In addition, the processor may beconfigured to determine other properties of the specimen from the one ormore output signals. In an additional embodiment, a semiconductor devicemay be fabricated by the method. For example, the method may includeforming a portion of a semiconductor device upon a specimen such as asemiconductor substrate.

[0093] In an embodiment, processing the one or more output signals todetermine a characteristic of a formed layer may include at leastpartially processing the one or more output signals using a localprocessor. The local processor may be coupled to the measurement device.Processing the one or more output signals may also include sending thepartially processed one or more output signals from the local processorto a remote controller computer. In addition, processing the one or moreoutput signals may include further processing the partially processedone or more output signals using the remote controller computer. In anadditional embodiment, the remote controller computer may be coupled tothe deposition tool. In this manner, the method may include altering aparameter of one or more instruments coupled to the deposition toolusing the remote controller computer in response to at least thedetermined characteristic of the formed layer on the specimen. Alteringthe parameter of the deposition tool may include using an in situcontrol technique, a feedback control technique, and/or a feedforwardcontrol technique.

[0094] Additional embodiments relate to a computer-implemented methodfor controlling a system that includes a deposition tool and ameasurement device. Controlling the system may include controlling themeasurement device, the deposition tool, or both. In addition, themeasurement device may include an illumination system and a detectionsystem. The measurement device may also be coupled to a stage.Controlling the measurement device may include controlling theillumination system to direct energy toward a surface of the specimen.Additionally, controlling the measurement device may include controllingthe detection system to detect energy propagating from the surface ofthe specimen. The method may also include generating one or more outputsignals in response to the detected energy. The computer-implementedmethod may further include processing the one or more output signals todetermine at least a characteristic of the layer as it is formed orafter it is formed. In addition, the processor may be configured todetermine other properties of the specimen from the one or more outputsignals.

[0095] An embodiment relates to a system that includes an etch toolcoupled to a beam profile ellipsometer. The etch tool may be configuredto direct chemically reactive and/or ionic species toward a specimen.The beam profile ellipsometer may be configured to determine a propertyof an etched region of the specimen during or after the etching process.The beam profile ellipsometer may include an illumination systemconfigured to direct an incident beam of light having a knownpolarization state toward a surface of the specimen during or afteretching of the specimen. The measurement device may also include adetection system coupled to the illumination system. The detectionsystem may be configured to generate one or more output signalsrepresentative of light returned from the specimen during or afteretching of the specimen. The system may also include a processor coupledto the measurement device. The processor may be configured to determinea property of the etched region of a specimen from the one or moreoutput signals. The processor may also be coupled to the etch tool. Theprocessor may alter a parameter of one or more instruments coupled tothe etch tool. Additionally, the processor may be configured to alter aparameter of the instruments coupled to the etch tool in response to theproperties of the etched layer.

[0096] In an embodiment, the system may also include a non-imagingscatterometer, a scatterometer, a spectroscopic scatterometer, areflectometer, a spectroscopic reflectometer, an ellipsometer, aspectroscopic ellipsometer, a bright field and/or dark field imagingdevice, a bright field and/or dark field non-imaging device, a coherenceprobe microscope, an interference microscope, or any combinationthereof. In this manner, the system may be configured to function as asingle measurement device or as multiple measurement devices. Becausemultiple measurement devices may be integrated into a single measurementdevice of the system, optical elements of a first measurement device,for example, may also be optical elements of a second measurementdevice.

[0097] In an embodiment, the processor may include a local processorcoupled to the beam profile ellipsometer and/or the etch tool and aremote controller computer coupled to the local processor. The localprocessor may be configured to at least partially process the one ormore output signals. The remote controller computer may be configured toreceive the at least partially processed one or more output signals fromthe processor. In addition, the remote controller computer may beconfigured to determine a property of an etched region on the specimenfrom the at least partially processed one or more output signals.Furthermore, the remote controller computer may be configured todetermine additional properties of the specimen from the at leastpartially processed one or more output signals. The remote controllercomputer may also be coupled to a etch tool. In this manner, the remotecontroller computer may be further configured to alter a parameter ofone or more instruments coupled to the etch tool in response to at leastthe determined property of the etched region of the specimen using an insitu control technique, a feedback control technique, and/or afeedforward control technique.

[0098] An additional embodiment relates to a method of evaluating anetched region of a specimen with a beam profile ellipsometer. The methodmay include etching a layer upon a specimen using an etch tool. The beamprofile ellipsometer may include an illumination system and a detectionsystem. In addition, the method may include directing light toward asurface of the specimen using the illumination system. The method mayalso include detecting light propagating from the surface of thespecimen using the detection system. The method may further includegenerating one or more output signals in response to the detected light.Furthermore, the method may include processing the one or more outputsignals to a property of the etched region of the specimen. In addition,the method may include processing the one or more output signals todetermine other properties of the specimen from the one or more outputsignals. In an additional embodiment, a semiconductor device may befabricated by the method. For example, the method may include forming aportion of a semiconductor device upon a specimen such as asemiconductor substrate.

[0099] In an embodiment, processing the one or more output signals todetermine a property of an etched region of a specimen may include atleast partially processing the one or more output signals using a localprocessor. The local processor may be coupled to the beam profileellipsometer. Processing the one or more output signals may also includesending the partially processed one or more output signals from thelocal processor to a remote controller computer. In addition, processingthe one or more output signals may include further processing thepartially processed one or more output signals using the remotecontroller computer. In an additional embodiment, the remote controllercomputer may be coupled to the etch tool. In this manner, the method mayinclude altering a parameter of one or more instruments coupled to theetch tool using the remote controller computer in response to at leastthe determined characteristic of the formed layer on the specimen.Altering the parameter of the etch tool may include using an in situcontrol technique, a feedback control technique, and/or a feedforwardcontrol technique.

[0100] Additional embodiments relate to a computer-implemented methodfor controlling a system that includes an etch tool and a beam profileellipsometer. Controlling the system may include controlling the beamprofile ellipsometer, the etch tool, or both. In addition, the beamprofile ellipsometer may include an illumination system and a detectionsystem. The beam profile ellipsometer may also be coupled to a stage.Controlling the beam profile ellipsometer may include controlling theillumination system to direct light toward a surface of the specimen.Additionally, controlling the beam profile ellipsometer may includecontrolling the detection system to detect light propagating from thesurface of the specimen. The method may also include generating one ormore output signals in response to the detected light. Thecomputer-implemented method may further include processing the one ormore output signals to determine at least a property of an etched regionof a specimen during etching, after the region is etched, or both. Inaddition, the processor may be configured to determine other propertiesof the specimen from the one or more output signals.

[0101] An embodiment relates to a system that includes an ion implantercoupled to a measurement device. The measurement device may beconfigured to determine at least a characteristic of an implanted regionof a specimen. The measurement device may be configured to determine acharacteristic of an implanted region of a specimen during or afterimplantation of the specimen. The system may include a stage configuredto support the specimen. The measurement device may include anillumination system configured to periodically direct two or more beamsof light toward a surface of the specimen during or after implantation.In one embodiment, the measurement device may direct an incident beam oflight to a specimen to periodically excite a region of the specimenduring implantation. Additionally, the measurement device may direct asample beam of light to the excited region of the specimen. Themeasurement device may also include a detection system coupled to theillumination system. The detection system may be configured to measurean intensity of the sample beam reflected from the excited region of thespecimen. The measurement device may also be configured to generate oneor more output signals in response to the measured intensity.

[0102] The system may also include a processor coupled to themeasurement device. The processor may be configured to determine acharacteristic of an implanted region from the one or more outputsignals. The processor may also be coupled to the ion implanter. Theprocessor may be configured to alter a parameter coupled to one or moreinstruments coupled to the ion implanter. Additionally, the processormay be configured to alter a parameter of one or more instrumentscoupled to the ion implanter in response to the determinedcharacteristic of the implanted region.

[0103] In an embodiment, the measurement device may include anon-imaging scatterometer, a scatterometer, a spectroscopicscatterometer, a reflectometer, a spectroscopic reflectometer, a brightfield and/or dark field imaging device, a bright field and/or dark fieldnon-imaging device, a coherence probe microscope, an interferencemicroscope, an optical profilometer, a modulated optical reflectancedevice, or any combination thereof. In this manner, the measurementdevice may be configured to function as a single measurement device oras multiple measurement devices. Because multiple measurement devicesmay be integrated into a single measurement device of the system,optical elements of a first measurement device, for example, may also beoptical elements of a second measurement device.

[0104] In an embodiment, the processor may include a local processorcoupled to the measurement device and/or the ion implanter and a remotecontroller computer coupled to the local processor. The local processormay be configured to at least partially process the one or more outputsignals. The remote controller computer may be configured to receive theat least partially processed one or more output signals from theprocessor. In addition, the remote controller computer may be configuredto determine a characteristic of the implanted region of the specimenfrom the at least partially processed one or more output signals.Furthermore, the remote controller computer may be configured todetermine additional properties of the specimen from the at leastpartially processed one or more output signals. The remote controllercomputer may also be coupled to an ion implanter. In this manner, theremote controller computer may be further configured to alter aparameter of one or more instruments coupled to the ion implanter inresponse to at least the determined property of the ion implantationregion of the specimen using an in situ control technique, a feedbackcontrol technique, and/or a feedforward control technique.

[0105] An additional embodiment relates to a method of evaluating animplanted region of a specimen. The method may include implanting ionsinto a region of a specimen using an ion implanter. The measurementdevice may include an illumination system and a detection system. Inaddition, the method may include directing an incident beam of lighttoward a region of the specimen to periodically excite the region of thespecimen during implantation or after implantation. A sample beam mayalso be directed to the excited region of the specimen. The method mayalso include measuring an intensity of light propagating from theexcited region of the specimen using the detection system. The methodmay further include generating one or more output signals in response tothe measured intensity. Furthermore, the method may include processingthe one or more output signals to determine a characteristic of theimplanted region. In addition, the method may include processing the oneor more output signals to determine other properties of the specimenfrom the one or more output signals. In an additional embodiment, asemiconductor device may be fabricated by the method. For example, themethod may include forming a portion of a semiconductor device upon aspecimen such as a semiconductor substrate.

[0106] In an embodiment, processing the one or more output signals todetermine a property of an ion implantation region may include at leastpartially processing the one or more output signals using a localprocessor. The local processor may be coupled to the measurement device.Processing the one or more output signals may also include sending thepartially processed one or more output signals from the local processorto a remote controller computer. In addition, processing the one or moreoutput signals may include further processing the partially processedone or more output signals using the remote controller computer. In anadditional embodiment, the remote controller computer may be coupled tothe ion implanter. In this manner, the method may include altering aparameter of one or more instruments coupled to the ion implanter usingthe remote controller computer in response to at least the determinedproperty of the ion implanted region of the specimen. Altering theparameter of the ion implanter may include using an in situ controltechnique, a feedback control technique, and/or a feedforward controltechnique.

[0107] Additional embodiments relate to a computer-implemented methodfor controlling a system that includes an ion implanter and ameasurement device. Controlling the system may include controlling themeasurement device, the ion implanter, or both. In addition, themeasurement device may include an illumination system and a detectionsystem. The measurement device may also be coupled to a stage.Controlling the measurement device may include controlling theillumination system to direct light toward a surface of the specimen.Additionally, controlling the measurement device may include controllingthe detection system to detect light propagating from the surface of thespecimen. The method may also include generating one or more outputsignals in response to the detected light. The computer-implementedmethod may further include processing the one or more output signals todetermine at least a characteristic an implanted region of the specimen.In addition, the method may include determining other properties of thespecimen from the one or more output signals.

[0108] An embodiment relates to a system that includes a process chambercoupled to a measurement device. The process chamber may be configuredto fabricate a portion of a semiconductor device on a specimen. Themeasurement device may be configured to determine a presence of defectson a specimen. The measurement device may be configured to determine apresence of defects on a specimen prior to, during, or after fabricationof a portion of the semiconductor device on the specimen. In oneembodiment, the measurement device may be configured to detect microdefects. The system may include a stage configured to support thespecimen. The stage may be configured to rotate.

[0109] The measurement device may include an illumination systemconfigured to direct energy toward a surface of the specimen prior to,during, or after fabrication. Additionally, the measurement device maybe configured to direct energy toward a surface of the specimen whilethe stage is stationary or while the stage is rotating. The measurementdevice may also include a detection system coupled to the illuminationsystem. The detection system may be configured to detect energypropagating from the surface of the specimen. The detection system maydetect energy prior to, during, or after fabrication. The detectionsystem may also be configured to detect energy while the stage isstationary or rotating. The measurement device may also be configured togenerate one or more output signals in response to the detected energy.

[0110] The system may also include a processor coupled to themeasurement device. The processor may be configured to a presence ofdefects on a surface of the specimen from the one or more outputsignals. The processor may also be coupled to the process chamber. Theprocessor may control a parameter of one or more instruments coupled tothe process chamber. Additionally, the processor may be configured toalter a parameter of one or more instruments coupled to the processchamber in response to the detection of micro defects on the surface ofthe specimen.

[0111] In an embodiment, the measurement device may include anon-imaging scatterometer, a scatterometer, a spectroscopicscatterometer, a reflectometer, a spectroscopic reflectometer, anellipsometer, a spectroscopic ellipsometer, a bright field and/or darkfield imaging device, a bright field and/or dark field non-imagingdevice, a coherence probe microscope, an interference microscope, anoptical profilometer, or any combination thereof. In this manner, themeasurement device may be configured to function as a single measurementdevice or as multiple measurement devices. Because multiple measurementdevices may be integrated into a single measurement device of thesystem, optical elements of a first measurement device, for example, mayalso be optical elements of a second measurement device.

[0112] In an embodiment, the processor may include a local processorcoupled to the measurement device and/or the process chamber and aremote controller computer coupled to the local processor. The localprocessor may be configured to at least partially process the one ormore output signals. The remote controller computer may be configured toreceive the at least partially processed one or more output signals fromthe local processor. In addition, the remote controller computer may beconfigured to determine a presence of defects on the specimen from theat least partially processed one or more output signals. Furthermore,the remote controller computer may be configured to determine additionalproperties of the specimen from the at least partially processed one ormore output signals. The remote controller computer may also be coupledthe process chamber. In this manner, the remote controller computer maybe further configured to alter a parameter of one or more instrumentscoupled to the process chamber in response to a determined presence ofdefects on the specimen using an in situ control technique, a feedbackcontrol technique, and/or a feedforward control technique.

[0113] An additional embodiment relates to a method of evaluating apresence of defects on a surface of a specimen using a system thatincludes a process tool and a measurement device. The method may be usedto detect a presence of micro defects on a specimen. The method mayinclude fabricating a portion of a semiconductor device on a specimenusing a process tool. The measurement device may include an illuminationsystem and a detection system. In addition, the method may includedirecting energy toward a surface of the specimen. The method may alsoinclude detecting energy propagating from the specimen using thedetection system. The method may further include generating one or moreoutput signals in response to the detected energy. Furthermore, themethod may include processing the one or more output signals todetermine a presence of defects on the specimen. The measurement devicemay be configured to determine the presence of defects prior to, during,or after a process. The specimen may also be placed on a stage. Themethod may include determining a presence of defects on the specimenwhile the stage is stationary or a while the stage is rotating.

[0114] In addition, the method may include determining other propertiesof the specimen from the one or more output signals. In an additionalembodiment, a semiconductor device may be fabricated by the method. Forexample, the method may include forming a portion of a semiconductordevice upon a specimen such as a semiconductor substrate.

[0115] In an embodiment, processing the one or more output signals todetermine a presence of defects on a specimen may include at leastpartially processing the one or more output signals using a localprocessor. The local processor may be coupled to the measurement device.Processing the one or more output signals may also include sending thepartially processed one or more output signals from the local processorto a remote controller computer. In addition, processing the one or moreoutput signals may include further processing the partially processedone or more output signals using the remote controller computer. In anadditional embodiment, the remote controller computer may be coupled tothe process tool. In this manner, the method may include altering aparameter of one or more instruments coupled to the process tool usingthe remote controller computer in response to the one or more outputsignals. Altering the parameter of the process tool may include using anin situ control technique, a feedback control technique, and/or afeedforward control technique.

[0116] Additional embodiments relate to a computer-implemented methodfor controlling a system that includes a process tool and a measurementdevice. Controlling the system may include controlling the measurementdevice, the process tool, or both. In addition, the measurement devicemay include an illumination system and a detection system. Themeasurement device may also be coupled to a stage. Controlling themeasurement device may include controlling the illumination system todirect energy toward a surface of the specimen. Additionally,controlling the measurement device may include controlling the detectionsystem to detect energy propagating from the surface of the specimen.The method may also include generating one or more output signals inresponse to the detected energy. The computer-implemented method mayfurther include processing the one or more output signals to determine apresence of defects on the specimen prior to, during, or subsequent toprocessing. In addition, the processor may be configured to determineother properties of the specimen from the one or more output signals.

[0117] An embodiment relates to a system that may be configured todetermine a presence of defects on multiple surfaces of a specimen. Thesystem may include a stage configured to support the specimen. Thesystem may also include a measurement device coupled to the stage. Thestage may be configured to move. The measurement device may include anillumination system configured to direct energy toward a front side anda back side of the specimen. The illumination system may be used whilethe stage is stationary or moving. The measurement device may alsoinclude a detection system coupled to the illumination system. Thedetection system may be configured to detect energy propagating alongmultiple paths from the front and back sides of the specimen. The systemmay also include a processor coupled to the measurement device. Themeasurement device may be configured to generate one or more outputsignals in response to the detected light. The processor may beconfigured to determine a presence of defects on the front and backsides of the specimen from the one or more output signals.

[0118] In addition, the processor may be configured to determine otherproperties of the specimen from the one or more output signals. In anembodiment, the measurement device may include a non-imagingscatterometer, a scatterometer, a spectroscopic scatterometer, areflectometer, a spectroscopic reflectometer, an ellipsometer, aspectroscopic ellipsometer, a bright field and/or dark field imagingdevice, a bright field and/or dark field non-imaging device, a coherenceprobe microscope, an interference microscope, an optical profilometer,or any combination thereof. In this manner, the measurement device maybe configured to function as a single measurement device or as multiplemeasurement devices. Because multiple measurement devices may beintegrated into a single measurement device of the system, opticalelements of a first measurement device, for example, may also be opticalelements of a second measurement device.

[0119] In an embodiment, the processor may include a local processorcoupled to the measurement device and a remote controller computercoupled to the local processor. The local processor may be configured toat least partially process the one or more output signals. The remotecontroller computer may be configured to receive the at least partiallyprocessed one or more output signals from the processor. In addition,the remote controller computer may be configured to determine a presenceof defects on the front and back sides of the specimen from the at leastpartially processed one or more output signals. Furthermore, the remotecontroller computer may be configured to determine additional propertiesof the specimen from the at least partially processed one or more outputsignals. In an additional embodiment, the remote controller computer maybe coupled to a process tool such as a semiconductor fabrication processtool. In this manner, the remote controller computer may be furtherconfigured to alter a parameter of one or more instruments coupled tothe process tool in response to at least the determined first or secondproperty of the specimen using an in situ control technique, a feedbackcontrol technique, and/or a feedforward control technique.

[0120] An additional embodiment relates to a method for determiningdefects on multiple surfaces of a specimen. The method may includedisposing a specimen upon a stage. The stage may be coupled to ameasurement device. The measurement device may include an illuminationsystem and a detection system. In addition, the method may includedirecting energy toward a front side and a back side of the specimenusing the illumination system. The method may also include detectingenergy propagating along multiple paths from the front and back sides ofthe specimen using the detection system. The method may further includegenerating one or more output signals in response to the detectedenergy. Furthermore, the method may include processing the one or moreoutput signals to determine the presence of defects on the front andback sides of the specimen.

[0121] In addition, the processor may be configured to determine otherproperties of the specimen from the one or more output signals. In anadditional embodiment, a semiconductor device may be fabricated by themethod. For example, the method may include forming a portion of asemiconductor device upon a specimen such as a semiconductor substrate.

[0122] In an embodiment, processing the one or more output signals todetermine the presence of defects on multiple surfaces of the specimenmay include at least partially processing the one or more output signalsusing a local processor. The local processor may be coupled to themeasurement device. Processing the one or more output signals may alsoinclude sending the partially processed one or more output signals fromthe local processor to a remote controller computer. In addition,processing the one or more output signals may include further processingthe partially processed one or more output signals using the remotecontroller computer. In an additional embodiment, the remote controllercomputer may be coupled to a process tool such as a semiconductorfabrication process tool. In this manner, the method may includealtering a parameter of one or more instruments coupled to the processtool using the remote controller computer in response to a determinedpresence of defects on multiple surfaces of the specimen. Altering theparameter of the instruments may include using an in situ controltechnique, a feedback control technique, and/or a feedforward controltechnique.

[0123] Additional embodiments relate to a computer-implemented methodfor controlling a system configured to determine defects on multiplesurfaces of a specimen. The system may include a measurement device. Inthis manner, controlling the system may include controlling themeasurement device. In addition, the measurement device may include anillumination system and a detection system. The measurement device mayalso be coupled to a stage. Controlling the measurement device mayinclude controlling the illumination system to direct energy toward asurface of the specimen. Additionally, controlling the measurementdevice may include controlling the detection system to detect energypropagating from the surface of the specimen. The stage may beconfigured to move. The method may also include controlling the stagesuch that the specimen is moved during analysis. The method may furtherinclude generating one or more output signals in response to thedetected energy. The computer-implemented method may further includeprocessing the one or more output signals to determine a presence ofdefects on multiple surfaces of the specimen.

[0124] In an embodiment, any of the systems, as described herein, may beused during the production of a semiconductor device. A semiconductordevice may be formed using one or more semiconductor processing steps.Each processing step may cause a change to a specimen. After aprocessing step, a portion of the semiconductor device may be formedupon a specimen. Prior to, during, or subsequent to a processing step,the specimen may be placed on a stage of a system configured todetermine at least two properties of the specimen. The system may beconfigured according to any of the above embodiments.

[0125] After the first and second properties are determined, theseproperties may be used to determine further processing steps forformation of the semiconductor device. For example, the system may beused to evaluate if a semiconductor process is performing adequately. Ifa semiconductor process is not performing adequately, data obtained fromthe system may be used to determine further processing the specimen. Inanother embodiment, detection of an incorrectly processed specimen mayindicate that the specimen should be removed from the semiconductorprocess. By using a multiple analysis system such as described above,processing of semiconductor devices may be enhanced. The time requiredfor testing may be reduced. Also, the use of multiple tests may ensurethat only apparently properly processed specimens are advanced to thenext processing steps. In this manner, yield of semiconductor devicesmay increase.

BRIEF DESCRIPTION OF THE DRAWINGS

[0126] Other objects and advantages of the invention will becomeapparent upon reading the following detailed description and uponreference to the accompanying drawings in which:

[0127]FIG. 1 depicts a schematic top view of an embodiment of a specimenhaving a plurality of dies and a plurality of defects on a surface of aspecimen;

[0128]FIG. 2a depicts a schematic top view of an embodiment of a stageconfigured to move rotatably during use and a measurement deviceconfigured to move linearly during use;

[0129]FIG. 2b depicts a schematic top view of an embodiment of a stageconfigured to move rotatably during use and a stationary measurementdevice;

[0130]FIG. 3 depicts a schematic side view of an embodiment of a systemhaving one illumination system and one detection system;

[0131]FIG. 4 depicts a schematic side view of an embodiment of a systemhaving multiple illumination systems and one detection system;

[0132]FIG. 5 depicts a schematic side view of an embodiment of a systemhaving multiple illumination systems and multiple detection system;

[0133]FIG. 6 depicts a schematic side view of an embodiment of a systemhaving one illumination system and multiple detection systems;

[0134]FIG. 7 depicts a schematic side view of an embodiment of a systemhaving one illumination system and multiple detection systems;

[0135]FIG. 8 depicts a schematic side view of an embodiment of aspecimen;

[0136]FIG. 9 depicts a schematic top view of an embodiment of a systemhaving a plurality of measurement devices;

[0137]FIG. 10 depicts a schematic side view of an embodiment of a systemconfigured to determine a critical dimension of a specimen;

[0138]FIG. 11a depicts a schematic side view of an embodiment of ameasurement device configured to determine a critical dimension of aspecimen;

[0139]FIG. 11b depicts a schematic side view of an embodiment of aportion of a measurement device configured to determine a criticaldimension of a specimen;

[0140]FIG. 12 depicts a schematic side view of an embodiment of a systemconfigured to determine multiple properties of multiple surfaces of aspecimen;

[0141]FIG. 13 depicts a schematic top view of an embodiment of a systemcoupled to a semiconductor fabrication process tool;

[0142]FIG. 14 depicts a perspective view of an embodiment of a systemconfigured to be coupled to a semiconductor fabrication process tool;

[0143]FIG. 15 depicts a perspective view of an embodiment of a systemcoupled to a semiconductor fabrication process tool;

[0144]FIG. 16 depicts a schematic side view of an embodiment of a systemdisposed within a measurement chamber;

[0145]FIG. 17 depicts a schematic side view of an embodiment of ameasurement chamber arranged laterally proximate to a process chamber ofa semiconductor fabrication process tool;

[0146]FIG. 18 depicts a schematic side view of an embodiment of a systemcoupled to a process chamber of a semiconductor fabrication processtool;

[0147]FIG. 19 depicts a flow chart illustrating an embodiment of amethod for determining at least two properties of a specimen;

[0148]FIG. 20 depicts a flow chart illustrating an embodiment of amethod for processing detected light returned from a surface of thespecimen;

[0149]FIG. 21 depicts a flow chart illustrating an embodiment of amethod for controlling a system configured to determine at least twoproperties of a specimen;

[0150]FIG. 22 depicts a schematic side view of an embodiment of a systemcoupled to a chemical-mechanical polishing tool;

[0151]FIG. 23 depicts a schematic side view of an embodiment of a systemcoupled to a chemical vapor deposition tool;

[0152]FIG. 24 depicts a schematic side view of an embodiment of a systemcoupled to an etch tool;

[0153]FIG. 25 depicts a schematic side view of an embodiment of a systemcoupled to an ion implanter;

[0154]FIG. 26 depicts a schematic side view of an embodiment of a systemconfigured to determine a characteristic of micro defects on a surfaceof a specimen; and

[0155]FIG. 27 depicts a schematic side view of an embodiment of a systemconfigured to determine a characteristic of defects of multiple surfacesof a specimen.

[0156] While the invention is susceptible to various modifications andalternative forms, specific embodiments thereof are shown by way ofexample in the drawings and will herein be described in detail. Itshould be understood, however, that the drawings and detaileddescription thereto are not intended to limit the invention to theparticular form disclosed, but on the contrary, the intention is tocover all modifications, equivalents and alternatives falling within thespirit and scope of the present invention as defined by the appendedclaims.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0157] Turning now to the drawings, FIG. 1 illustrates a schematic topview of an embodiment of a surface of specimen 10. Specimen 10 mayinclude a substrate such as a monocrystalline silicon substrate, asilicon germanium substrate, or a gallium arsenide substrate. Inaddition, specimen 10 may include any substrate suitable for fabricationof semiconductor devices. Specimen 10 may include plurality of dies 12having repeatable pattern features. Alternatively, specimen 10 may beunpatterned such as a virgin semiconductor wafer or an unprocessedwafer. In addition, specimen 10 may include a glass substrate or anysubstrate formed from a substantially transparent material, which may besuitable for fabrication of a reticle. Furthermore, specimen 10 mayinclude any specimen known in the art.

[0158] In addition, specimen 10 may include one or more layers arrangedupon a substrate. For example, layers which may be formed on a substratemay include, but are not limited to, a resist, a dielectric material,and/or a conductive material. The resist may include photoresistmaterials that may be patterned by an optical lithography technique. Theresist may include other resists, however, such as e-beam resists orX-ray resists that may be patterned by an e-beam or an X-ray lithographytechnique, respectively. Examples of an appropriate dielectric materialmay include, but are not limited to, silicon dioxide, silicon nitride,silicon oxynitride, and titanium nitride. In addition, examples of anappropriate conductive material may include aluminum, polysilicon, andcopper. Furthermore, a specimen may also include semiconductor devicessuch as transistors formed on a substrate such as a wafer.

[0159]FIGS. 2a and 2 b illustrate a schematic top view of an embodimentof stage 24 configured to support a specimen. The stage may be a vacuumchuck or an electrostatic chuck. In this manner, a specimen may be heldsecurely in place on the stage. In addition, the stage may be amotorized translation stage, a robotic wafer handler, or any othersuitable mechanical device known in the art. In an embodiment, thesystem may include measurement device 26 coupled to the stage. As such,the stage may be configured to impart relative motion to the specimenwith respect to the measurement device. In an example, the stage may beconfigured to move specimen relative to the measurement device in alinear direction. The relative motion of the stage may cause an incidentbeam of energy from an energy source of a measurement device to traversethe surface of the specimen while leaving the angle of incidence atwhich light strikes the surface of the specimen substantially unchanged.As used herein, the term “measurement device” is generally used to referto a metrology device, an inspection device, or a combination metrologyand inspection device.

[0160] As shown in FIGS. 2a and 2 b, stage 24 may be configured torotate in clockwise and counterclockwise directions as indicated byvector 28 such that a specimen may be oriented with respect tomeasurement device 26 in a plurality of directions. As such, the stagemay also be used to correct an orientation of a specimen such that aspecimen may be substantially aligned with respect to a measurementdevice during measurement or inspection. In addition, stage 24 may befurther configured to rotate and to move linearly simultaneously.Examples of methods for aligning a specimen to a measurement device areillustrated in U.S. Pat. No. 5,682,242 to Eylon, U.S. Pat. No. 5,867,590to Eylon, and U.S. Pat. No. 6,038,029 to Finarov, and are incorporatedby reference as if fully set forth herein.

[0161] In an embodiment, stage 24 may be further configured to movealong a z-axis to alter a distance between a specimen and measurementdevice 26. For example, altering a distance between a specimen and ameasurement device may substantially focus a beam of energy from anenergy source of the measurement device on the surface of the specimen.Examples of focusing systems are illustrated in U.S. Pat. No. 5,604,344to Finarov, and U.S. Pat. No. 6,124,924 to Feldman et al., which areincorporated by reference as if fully set forth herein. An example forfocusing a charged particle beam on a specimen is illustrated inEuropean Patent Application No. EP 1 081 741 A2 to Pearl et al., and isincorporated by reference as if fully set forth herein.

[0162] As shown in FIG. 2a, stage 24 may be configured to move withrespect to measurement device 26, and the measurement device may beconfigured to move with respect to the stage. For example, measurementdevice 26 may be configured to move linearly along a direction indicatedby vector 29 while stage 24 may be configured to move rotatably. Assuch, an incident beam of energy from an energy source of themeasurement device may traverse a radius of the stage as the stage isrotating.

[0163] As shown in FIG. 2b, measurement device 30 may be configured tobe relatively stationary in a position relative to stage 24. Devices(not shown) including, but not limited to, a deflector such as anacousto-optical deflector (“AOD”) within measurement device 30 may beconfigured to linearly alter a position of an incident beam with respectto the stage. An example of an AOD is illustrated in PCT Application No.WO 01/14925 A1 to Allen et al., and is incorporated by reference as iffully set forth herein. In this manner, the incident beam may betraverse a radius of the stage as the stage is rotating. In addition, byaltering a position of an incident beam with respect to the stage usingsuch devices, registry of the measurement device with a pattern formedon a surface of a specimen may be maintained. The device may beconfigured to cause an incident beam of energy from an energy source ofthe measurement device to traverse the surface of the specimen whileleaving the angle of incidence at which the beam of energy strikes thesurface of the specimen substantially unchanged.

[0164] In a further embodiment, measurement device 30 may include aplurality of energy sources such as illumination systems and a pluralityof detection systems. The plurality of illumination systems and theplurality of detection systems may be arranged in two linear arrays. Theillumination systems and the detection systems may be arranged such thateach illumination system may be coupled to one of the detection systems.As such, measurement device 30 may be configured as a linear imagingdevice. In this manner, the measurement device may be configured tomeasure or inspect any location on a surface of specimen substantiallysimultaneously or sequentially. In addition, the measurement device maybe configured such that measurements may be made at multiple locationson a specimen substantially simultaneously while the stage may berotating. Furthermore, the stage and the measurement device may beconfigured to move substantially continuously or intermittently. Forexample, the stage and the measurement device may be movedintermittently such that the system may be configured as amove-acquire-measure system.

[0165] A measurement device and stage configured, as described above, tocontrol and alter the measurement or inspection location of the specimenmay provide several advantages in comparison to currently used systems.For example, currently used systems configured to inspect multiplelocations on a specimen may include a stationary measurement device anda stage configured to move laterally in two independent directions.Alternatively, currently used systems may include a stationary stage anda measurement device configured to alter a position of an beam of energyincident on a specimen by altering a position of two mirrors in a firstdirection and a position of two mirrors in a second direction. Anexample of such a system is illustrated in U.S. Pat. No. 5,517,312 toFinarov and U.S. Pat. No. 5,764,365 to Finarov, and are incorporated byreference as if fully set forth herein. An additional system may includea stage configured to rotate and a laser light source configured to moveradially. Such a system may be unsuitable for measurement or inspectinga patterned specimen. Additional examples of currently used systems areillustrated in U.S. Pat. No. 5,943,122 to Holmes, and is incorporated byreference as if fully set forth herein.

[0166] As the lateral dimension of specimens such as wafers increases to300 mm, moving a specimen linearly during inspection or measurement maybecome impractical due to space requirements of a typical semiconductorfabrication facility. In addition, moving such a specimen may becomeextremely expensive due to the cost of maintaining a relatively largerclean space for such tools. As such, a system configured as described inabove embodiments may be configured to inspect or measure an entiresurface of a specimen without linearly moving the specimen.

[0167]FIG. 3 illustrates a schematic side view of an embodiment ofsystem 32 configured to determine at least two properties of a specimen.System 32 may include measurement device 34 having illumination system36 and detection system 38. Illumination system 36 may be configured todirect light toward a surface of specimen 40 disposed upon stage 42.Stage 42 may be configured as described in above embodiments. Detectionsystem 38 may be coupled to illumination system 36 and may be configuredto detect light propagating from the surface of the specimen. Forexample, detection system 38, illumination system 36, and additionaloptical components may be arranged such that spectrally reflected lightor scattered light propagating from the surface of specimen 40 may bedetected by the detection system.

[0168] Illumination system 36 may include energy source 44. Energysource 44 may be configured to emit monochromatic light. For example, asuitable monochromatic light source may be a gas laser or a solid statelaser diode. Alternatively, the energy source may be configured to emitelectromagnetic radiation of multiple wavelengths, which may includeultraviolet light, visible light, infra-red light, X-rays, gamma rays,microwaves, or radio-frequencies. In addition, the energy source may beconfigured to emit another source of energy source such as an beam ofelectrons, protons, neutrons, ion, or molecules. For example, a thermalfield emission source is typically used as an electron source.

[0169] Detection system 38 may include detector 46. Detector 46 mayinclude light sensitive sensor devices including, but not limited to, aphotodetector, a multi-cell photodetector, an interferometer, an arrayof photodiodes such as a linear sensor array, a conventionalspectrophotometer, a position sensitive detector, photomultiplier tubes,avalanche photodiodes, a charge-coupled device (“CCD”) camera, a timedelay integration (“TDI”) camera, a video camera, a pattern recognitiondevice, and an imaging system. In addition, the detector may includesolid state detectors such as Schottky solid state barrier detectors.

[0170] In addition, measurement device 34 may include any number ofadditional optical components (not shown). Appropriate opticalcomponents may include, but are not limited to, beam splitters ordichroic mirrors, quarter wave plates, polarizers such as linear andcircular polarizers, rotating polarizers, rotating analyzers,collimators, focusing lenses, additional lenses, folding mirrors,partially transmissive mirrors, filters such as spectral or polarizingfilter, spatial filters, reflectors, deflectors, and modulators. Each ofthe additional optical components may be coupled to or disposed withinthe illumination system or the detection system. Furthermore, themeasurement device may include a number of additional electromagneticdevices (not shown) that may include magnetic condenser lenses, magneticobjective lenses, electrostatic deflection systems, beam limitingapertures, and Wien filters.

[0171] An arrangement of the illumination system, the detection system,and additional optical and electromagnetic components may vary dependingon, for example, the technique or techniques used to determine at leastthe two properties of the specimen. The arrangement of the illuminationsystem, the detection system, and additional optical and electromagneticcomponents may also depend on the properties of the specimen, which arebeing determined. For example, as shown in FIG. 3, measurement device 34may include optical component 48 disposed within or coupled toillumination system 36. Optical component 48 may include, but is notlimited to, a polarizer, a spectral or polarizing filter, and a quarterwave plate. In addition, measurement device 34 may include beam splitter50 and optical component 52. Optical component 52 may be disposed withinor coupled to detection system 38. Optical component 52 may include, butis not limited to, a quarter wave plate, a collimator, and a focusinglens.

[0172] FIGS. 4-7 illustrate alternate embodiments of measurement device34 of system 32. As will be further described herein, elements of system32, which may be similarly configured in each of the embodimentsillustrated in FIGS. 3-7 have been indicated by the same referencecharacters. For example, energy source 44 may be similarly configured ineach of the embodiments illustrated in FIGS. 3-7. As shown in FIG. 4,measurement device 34 may include a plurality of energy sources 44. Eachof energy sources may be configured to emit substantially similar typesof energy or different types of energy. For example, the plurality ofenergy sources 44 may include any of the light sources described herein.The light sources may be configured to emit broadband light.Alternatively, the light sources may include two emit different types oflight. For example, one of the light sources may be configured to emitlight of a single wavelength, and the other light source may beconfigured to emit broadband light. In addition, the energy sources maybe configured to direct a beam of energy to substantially the samelocation on the surface of specimen 40, as shown in FIG. 4.Alternatively, the plurality of energy sources 44 may be configured todirect a beam of energy to substantially different locations on thesurface of specimen 40, as shown in FIG. 5. For example, as shown inFIG. 5, the plurality of energy sources may be configured to directenergy to laterally spaced locations on the surface of specimen 40. Theplurality of energy sources shown in FIG. 5 may also be configured asdescribed above.

[0173] As shown in FIG. 4, measurement device may include detector 46coupled to the plurality of energy sources 44. In this manner, detector46 may be positioned with respect to the plurality of energy sourcessuch that the detector may be configured to detect different types ofenergy propagating from the surface of specimen 40 such as specularlyreflected light and scattered light. The detector may also be configuredto detect different types of energy propagating from the surface of thespecimen substantially simultaneously. For example, the detector mayinclude an array of photodiodes. A first portion of the array ofphotodiodes may be configured to detect only incident light from one ofthe plurality of light sources propagating from the surface of thespecimen. A second portion of the array of photodiodes may be configuredto detect only incident light from the other of the plurality of lightsource propagating from the surface of the specimen. As such, thedetector may be configured to detect incident light from each of aplurality of light sources propagating from the surface of the specimensubstantially simultaneously. Alternatively, the plurality of energysources may be configured to intermittently direct energy to the surfaceof the specimen. As such, the detector may be configured to detectincident energy from each of the plurality of energy sources propagatingfrom the surface of the specimen intermittently.

[0174] As shown in FIG. 5, measurement device 34 may include a pluralityof detectors 46. Each of the plurality of detectors may be coupled toone of the plurality of energy sources 44. In this manner, each detector46 may be positioned with respect to one of the energy sources such thatthe detector may be configured to detect incident energy from one of theenergy sources propagating from the surface of specimen 40. For example,one of the detectors may be positioned with respect to a first lightsource to detect light scattered from the surface of the specimen. In anexample, scattered light may include dark field light propagating alonga dark field path. A second of the plurality of detectors may bepositioned with respect to a second light source to detect lightspecularly reflected from the surface of the specimen such as brightfield light propagating along a bright field path. The plurality ofdetectors may be configured as described in above embodiments. Forexample, the plurality of detectors may include two different detectorsor two of the same type of detectors. For example, a first detector maybe configured as a conventional spectrophotometer, and a second detectormay be configured as a quad-cell detector. Alternatively, both detectorsmay be configured as an array of photodiodes.

[0175] As shown in FIG. 4, measurement device 34 may also includemultiple optical components 48. For example, optical components 48 maybe coupled to each of the plurality of energy sources 44. In an example,a first of the optical components may be configured as a polarizer, anda second of the optical components may be configured as a focusing lens.Alternatively, as shown in FIG. 5, measurement device 34 may include oneoptical component 48 coupled to each of the plurality of energy sources44. Each of the optical components 48 may be configured as describedherein. In addition, as shown in FIG. 5, measurement device 34 mayinclude an optical component such as beam splitter 50 coupled to one ofthe plurality of energy sources. For example, beam splitter 50 may bepositioned along a path of light directed from a light source. Beamsplitter 50 may be configured to transmit light from the light sourceand to reflect light propagating from the surface of the specimen. Thebeam splitter may be configured to reflect light propagating from thesurface of the specimen such that the reflected light may be directed todetector 46. In addition, beam splitters may be positioned along a pathof the light directed from each of the plurality of light sources.Optical component 52 may also be coupled to detector 46, as shown inFIG. 4, and may be configured as, for example, a quarter wave plate, acollimator, and a focusing lens. Optical component 52 may be furtherconfigured as described herein. Multiple optical components 52 may alsobe coupled to each of the detectors. The position and the configurationof each of the optical components may vary, however, depending on theproperties of the specimen to be determined by the system as will bedescribed in more detail below.

[0176]FIGS. 6 and 7 illustrate schematic side views of additionalembodiments of system 32. As shown in these figures, measurement device34 may include a single energy source 44. In addition, measurementdevice 34 may include a plurality of detectors 46. The detectors mayinclude any of devices as described herein. Each of the plurality ofdetectors 46 may be positioned at a different angle with respect toenergy source 44. For example, as shown in FIG. 6, one of the detectorsmay be configured to detect dark field light propagating along a darkfield path. The second detector may be configured to detect bright fieldlight propagating along a bright field path. Alternatively, as shown inFIG. 7, each of the plurality of detectors may be configured to detectspecularly reflected light. The plurality of detectors may be similarlyconfigured, for example, as photodiode arrays. Alternatively, theplurality of detectors may be configured as different detectors such asa conventional spectrophotometer and a quad cell detector.

[0177] In addition, the illumination system may be configured to directdifferent types of energy to the surface of the specimen at varyingintervals. For example, the energy source may be configured to emit onetype of light. As shown in FIG. 7, optical component 48 may be coupledto energy source 44. Optical component 48 may also be configured toalter the light emitted by energy source 44 at varying intervals. Forexample, optical component 48 may be configured as a plurality ofspectral and/or polarizing filters that may be rotated in a path of thelight emitted by energy source 44 at varying intervals or a liquidcrystal display (“LCD”) filter that may be controlled by a controllercoupled to the filter. The controller may be configured to alter thetransmissive, reflective, and/or polarization properties of the LCDfilter at varying intervals. The properties of the LCD filter may bealtered to change a spectral property or a polarization state of thelight emitted from the energy source. In addition, each of the pluralityof detectors may be suitable to detect a different type of lightpropagating from the surface of the specimen. As such, the measurementdevice may be configured to measure substantially different opticalcharacteristics of the specimen at varying intervals. In this manner,measurement device 34 may be configured such that energy directed to thesurface of the specimen and the energy returned from the surface of thespecimen may vary depending on, for example, the properties of thespecimen to be measured using the system.

[0178] In an embodiment, system 32, as shown in FIGS. 3-7, may includeprocessor 54 coupled to measurement device 34. The processor may beconfigured to receive one or more output signals generated by a detectorof the measurement device. The one or more output signals may berepresentative of the detected energy returned from the specimen. Theone or more output signals may be an analog signal or a digital signal.The processor may be configured to determine at least a first propertyand a second property of the specimen from the one or more outputsignals generated by the detector. The first property may include acritical dimension of specimen 40, and the second property may includeoverlay misregistration of specimen 40. For example, the measurementdevice may include, but is not limited to, a scatterometer, anon-imaging scatterometer, a spectroscopic scatterometer, areflectometer, a spectroscopic reflectometer, an ellipsometer, aspectroscopic ellipsometer, a beam profile ellipsometer, a bright fieldimaging device, a dark field imaging device, a bright field and darkfield imaging device, a bright field non-imaging device, a dark fieldnon-imaging device, a bright field and dark field non-imaging device, acoherence probe microscope, an interference microscope, an opticalprofilometer, or any combination thereof. In this manner, the system maybe configured as a single measurement device or as multiple measurementdevices.

[0179] Because multiple measurement devices may be integrated into asingle system, optical elements of a first measurement device, forexample, may also be used as optical elements of a second measurementdevice. In addition, multiple measurement devices may be coupled to acommon stage, a common handler, and a common processor. The handler mayinclude a mechanical device configured to dispose a specimen on thecommon stage and to remove a specimen from the common stage or any otherhandler as described herein. In addition, the system may be configuredto determine a critical dimension and an overlay misregistration of aspecimen sequentially or substantially simultaneously. In this manner,such a system may be more cost, time, and space efficient than systemscurrently used in the semiconductor industry.

[0180]FIG. 8 illustrates a schematic side view of an embodiment of aspecimen. As shown in FIG. 8, a plurality of features 56 may be formedupon upper surface 58 of specimen 60. For example, features formed on anupper surface of the specimen may include local interconnects, gatestructures such as gate electrodes and dielectric sidewall spacers,contact holes, and vias. The plurality of features, however, may also beformed within the specimen. Features formed within the specimen mayinclude, for example, isolation structures such as field oxide regionswithin a semiconductor substrate and trenches. A critical dimension mayinclude a lateral dimension of a feature defined in a directionsubstantially parallel to an upper surface of the specimen such as width62 of feature 56 on specimen 60. Therefore, a critical dimension may begenerally defined as the lateral dimension of a feature when viewed incross section such as a width of a gate or interconnect or a diameter ofa hole or via. A critical dimension of a feature may also include alateral dimension of a feature defined in a direction substantiallyperpendicular to an upper surface of the specimen such as height 64 offeature 56 on specimen 60.

[0181] In addition, a critical dimension may also include a sidewallangle of a feature. A “sidewall angle” may be generally defined as anangle of a side (or lateral) surface of a feature with respect to anupper surface of the specimen. In this manner, a feature having asubstantially uniform width across a height of the feature may havesidewall angle 66 of approximately 90°. Features of a specimen such as asemiconductor device that have a substantially uniform width across aheight of the features may be formed relatively closely together therebyincreasing device density of the semiconductor device. In addition, sucha device may have relatively predictable and substantially uniformelectrical properties. A feature having a tapered profile or non-uniformwidth across a height of the feature may have sidewall angle 68 of lessthan approximately 90°. A tapered profile may be desired if a layer maybe formed upon the feature. For example, a tapered profile may reducethe formation of voids within the layer formed upon the feature.

[0182] Overlay misregistration may be generally defined as a measure ofthe displacement of a lateral position of a feature on a first level ofa specimen with respect to a lateral position of a feature on a secondlevel of a specimen. The first level may be formed above the secondlevel. For example, overlay misregistration may be representative of thealignment of features on multiple levels of a semiconductor device.Ideally, overlay misregistration is approximately zero such thatfeatures on a first level of a specimen may be perfectly aligned tofeatures on a second level of a specimen. For example, a significantoverlay misregistration may cause undesirable contact of electricalfeatures on first and second levels of a specimen. In this manner, asemiconductor device formed on such a significantly misaligned specimenmay have a number of open or short circuits thereby causing devicefailure.

[0183] An extent of overlay misregistration of a specimen may varydepending on, for example, performance characteristics of a lithographyprocess. During lithography, a reticle, or a mask, may be disposed abovea resist arranged on a first level of the specimen. The reticle may havesubstantially transparent regions and substantially opaque regions thatmay be configured in a pattern, which may transferred to the resist. Thereticle may be positioned above a specimen by an exposure toolconfigured to detect a position of an alignment mark on the specimen. Inthis manner, overlay misregistration may be caused by performancelimitations of an exposure tool to detect an alignment mark and to altera position of the reticle with respect to the specimen.

[0184]FIG. 9 illustrates a schematic top view of an embodiment of system70 having a plurality of measurement devices. Each of the measurementdevices may be configured as described herein. For example, each of themeasurement devices may be configured to determine at least one propertyof a specimen. In addition, each of the measurement devices may beconfigured to determine a different property of a specimen. As such,system 70 may be configured to determine at least four properties of aspecimen. For example, measurement device 72 may be configured todetermine a critical dimension of a specimen. In addition, measurementdevice 74 may be configured to determine overlay misregistration of thespecimen in a first lateral direction. Measurement device 76 may beconfigured to determine overlay misregistration of the specimen in asecond lateral direction. The first lateral direction may besubstantially orthogonal to the second lateral direction. Furthermore,measurement device 78 may be configured as a pattern recognition device.As such, system 70 may be configured to determine at least fourproperties of the specimen simultaneously or sequentially. In addition,each of the measurement devices may be configured to determine anyproperty of a specimen as described herein.

[0185]FIG. 10 illustrates a schematic side view of an embodiment ofsystem 80 configured to determine at least two properties of a specimen.For example, system 80 may be configured to determine at least acritical dimension of a specimen. As such, system 80 may be included insystem 70 as described in above embodiments. System 80 may includebroadband light source 82. The term “broadband light” is generally usedto refer to radiation having a frequency-amplitude spectrum thatincludes two or more different frequency components. A broadbandfrequency-amplitude spectrum may include a broad range of wavelengthssuch as from approximately 190 nm to approximately 1700 nm. The range ofwavelengths, however, may be larger or smaller depending on, forexample, the light source capability, the sample being illuminated, andthe property being determined. For example, a xenon arc lamp may be usedas a broadband light source and may be configured to emit a light beamincluding visible and ultraviolet light.

[0186] System 80 may also include beam splitter 84 configured to directlight emitted from light source 82 to a surface of a specimen 85. Thebeam splitter may be configured as a beam splitter mirror that may beconfigured to produce a continuous broadband spectrum of light. System80 may also include lens 86 configured to focus light propagating frombeam splitter 84 onto a surface of specimen 85. Light returned from thesurface of specimen 85 may pass through beam splitter 84 to diffractiongrating 88. The diffraction grating may be configured to disperse lightreturned from the surface of the specimen. The dispersed light may bedirected to a spectrometer such as detector array 90. The detector arraymay include a linear photodiode array. The light may be dispersed by adiffraction grating as it enters the spectrometer such that theresulting first order diffraction beam of the sample beam may becollected by the linear photodiode array. Examples of spectroscopicreflectometers are illustrated in U.S. Pat. No. 4,999,014 to Gold etal., and U.S. Pat. No. 5,747,813 to Norton et al. and are incorporatedby reference as if fully set forth herein.

[0187] The photodiode array, therefore, may measure the reflectancespectrum 92 of the light returned from the surface of the specimen. Arelative reflectance spectrum may be obtained by dividing the intensityof the returned light of the reflectance spectrum at each wavelength bya relative reference intensity at each wavelength. A relativereflectance spectrum may be used to determine the thickness of variousfilms on the wafer. In addition, the reflectance at a single wavelengthand the refractive index of the film may also be determined from therelative reflectance spectrum. Furthermore, a model method by modalexpansion (“MMME”) model 94 may be used to generate library 96 ofvarious reflectance spectrums. The MMME model is a rigorous diffractionmodel that may be used to calculate the theoretical diffracted light“fingerprint” from each grating in the parameter space. Alternativemodels may also be used to calculate the theoretical diffracted light,however, including, but not limited to, a rigorous coupling waveguideanalysis (“RCWA”) model. The measured reflectance spectrum 92 may befitted to a the various reflectance spectrums in library 96. The fitteddata 97 may be used to determine critical dimension 95 such as a lateraldimension, a height, and a sidewall angle of a feature on the surface ofa specimen as described herein. Examples of modeling techniques areillustrated in PCT Application No. WO 99/45340 to Xu et al., and isincorporated by reference as if fully set forth herein.

[0188]FIGS. 11a and 11 b illustrate additional schematic side views ofan embodiment of measurement device 98 configured to determine aproperty such as a critical dimension of a specimen. The measurementdevice may be coupled to system 80 described above. Measurement device98 may include fiber optic light source 100. The fiber optic lightsource may be configured to emit and direct light to collimating mirror102. Collimating mirror 102 may be configured to alter a path of thelight emitted by the fiber optic light source such that it propagatestoward a surface of specimen 104 in substantially one direction alongpath 106. Light emitted by fiber optic light source 100 may also bedirected to reflective mirror 108. Reflective mirror 108 may beconfigured to direct the light emitted by the fiber optic light sourceto reference spectrometer 110. Reference spectrometer 110 may beconfigured to measure an intensity of light emitted by the fiber opticlight source. In addition, reference spectrometer 110 may be configuredto generate one or more output signals in response to the measuredintensity of light. As such, the signal generated by referencespectrometer 110 may be used to monitor variations in the intensity oflight emitted by the fiber optic light source.

[0189] Measurement device 98 may also include polarizer 112. Polarizer112 may be oriented at a 45° angle with respect to path 106 of thelight. Polarizer 112 may be configured to alter a polarization state ofthe light such that light propagating toward a surface of the specimenmay be linearly or circularly polarized. Measurement device 98 may alsoinclude light piston 114 positioned along path 106 of the light. Thelight piston may be configured to alter a direction of the path of thelight propagating toward the surface of the specimen. For example,portion 115 of the measurement device may be configured to move withrespect to the specimen to measure multiple locations on the specimen.In this manner, the light position may be configured to cause lightpropagating along path 106 to traverse the surface of the specimen whileleaving the angle of incidence at which light strikes the surface of thespecimen substantially unchanged.

[0190] The measurement device may also include apodizer 116. Apodizer116 may have a two dimensional pattern of alternating relatively hightransmittance areas and substantially opaque areas. The alternatingpattern may have a locally averaged transmittance function such as anapodizing function. As such, an apodizer may be configured to reduce alateral area of an illuminated region of a specimen to improve afocusing resolution of the measurement device. The measurement devicemay also include a plurality of mirrors 118 configured to direct lightpropagating along path 106 to a surface of a specimen. In addition, themeasurement device may also include reflecting objective 120 configuredto direct the light to the surface of the specimen. For example, asuitable reflecting objective may have a numerical aperture (“NA”) ofapproximately 0.1 such that light may be may be directed at a surface ofthe specimen at high angles of incidence.

[0191] Light returned from the surface of the specimen may be reflectedby objective lens 120 and one of the mirrors to analyzer 122. Analyzer122 may be configured to split the light returned from the surface ofthe specimen into two reflected light beams based on the polarizationstate of the light. For example, analyzer 112 may be configured togenerate two separate beams of light having substantially differentpolarization states. As shown in FIG. 11b, measurement device may alsoinclude autofocus sensor 124. Autofocus sensor 124 may include a splitphotodiode detector configured to receive a substantially focused imageof the illuminated spot on the specimen. The focused image of the spotmay be provided by beam splitter 125 positioned along an optical pathbetween analyzer 122 and mirror 118. For example, the beam splitter maybe configured to direct a portion of the light returned from specimen104 to the autofocus sensor. Autofocus sensor 124 may include twophotodiodes configured to measure an intensity of the image and to senda signal representative of the measured intensity to a processor. Theoutput of autofocus sensor may be called a focus signal. The focussignal may be a function of sample position. The processor may beconfigured to determine a focus position of the specimen with respect tothe measurement device using a position of an extremum in the focussignal.

[0192] The measurement device may also include mirror 126 configured todirect light returned from the surface of the specimen to spectrometer128. Spectrometer 128 may be configured to measure an intensity of the sand p components of reflectance across a spectrum of wavelengths. Theterm “s component” is generally used to describe the component ofpolarized radiation having an electrical field that is substantiallyperpendicular to the plane of incidence of the reflected beam. The term“p component” is generally used to describe the component of polarizedradiation having an electrical field in the plane of incidence of thereflected beam. The measured reflectance spectrum may be used todetermine a critical dimension, a height, and a sidewall angle of afeature on the surface of the specimen as described herein. For example,a relative reflectance spectrum may be obtained by dividing theintensity of the returned light at each wavelength measured byspectrometer 128 by a relative reference intensity at each wavelengthmeasured by reference spectrometer 110 of the measurement device. Therelative reflectance spectrum may be fitted to a theoretical model ofthe data such that a critical dimension, a height, and a sidewall anglemay be determined.

[0193] In an embodiment, as shown in FIG. 9, measurement device 74 andmeasurement device 76 of system 70 may be configured as a coherenceprobe microscope, an interference microscope, or an opticalprofilometer. For example, a coherence probe microscope may beconfigured as a specially adapted Linnik microscope in combination witha video camera, a specimen transport stage, and data processingelectronics. Alternatively, other interferometric optical profilingmicroscopes and techniques such as Fringes of Equal Chromatic Order(“FECO”), Nomarski polarization interferometer, differentialinterference contrast (“DIC”), Tolansky multiple-beam interferometry,and two-beam-based interferometry based on Michelson, Fizeau, and Miraumay be adapted to the system. The measurement device may utilize eitherbroad band or relatively narrow band light to develop a plurality ofinterference images taken at different axial positions (elevations)relative to the surface of a specimen. The interference images mayconstitute a series of image planes. The data in these planes may betransformed by an additive transformation on video signal intensities.The transformed image data may be used to determine an absolute mutualcoherence between the object wave and reference wave for each pixel inthe transformed plane. Synthetic images may be formed whose brightnessmay be proportional to the absolute mutual coherence as the optical pathlength is varied.

[0194] In an embodiment, a measurement device configured as aninterference microscope may include a energy source such as a xenon lampconfigured to emit an incident beam of light. An appropriate energysource may also include a light source configured to emit coherent lightsuch as light that may be produced by a laser. The measurement devicemay further include additional optical components configured to directthe incident beam of light to a surface of the specimen. Appropriateadditional optical components may include condenser lenses, filters,diffusers, aperture stops, and field stops. Additional opticalcomponents may also include beam splitters, microscopic objectives, andpartially transmissive mirrors.

[0195] The optical components may be arranged within the measurementdevice such that a first portion of the incident beam of light may bedirected to a surface of a specimen. The optical components may befurther arranged within the measurement device such that a secondportion of the incident beam of light may be directed to a referencemirror. For example, the second portion of the incident beam of lightmay be generated by passing the incident beam of light through apartially transmissive mirror prior to directing the sample beam to asurface of the specimen. Light reflected from the surface of thespecimen may then be combined with light reflected from the referencemirror. In an embodiment, the detection system may include aconventional interferometer. The reflected incident beam of light may becombined with the reference beam prior to striking the interferometer.Since the incident beam of light reflected from the surface of thespecimen and the reference beam reflected from the reference mirror arenot in phase, interference patterns may develop in the combined beam.Intensity variations of the interference patterns in the combined beammay be detected by the interferometer.

[0196] The interferometer may be configured to generate a signalresponsive to the detected intensity variations of the interferencepatterns of the combined beam. The generated signal may be processed toprovide surface information about the measured surface. The measurementdevice may also include a spotter microscope to aid in control of theincident beam of light. The spotter microscope may be electronicallycoupled to the measurement device to provide some control of theincident beam of light. Examples of interference microscopes and methodsof use are illustrated in U.S. Pat. No. 5,112,129 to Davidson et al.,U.S. Pat. No. 5,438,313 to Mazor et al., U.S. Pat. No. 5,712,707 toAusschnitt et al., U.S. Pat. No. 5,757,507 to Ausschnitt et al., U.S.Pat. No. 5,805,290 to Ausschnitt et al., U.S. Pat. No. 5,914,784 toAusschnitt et al., U.S. Pat. No. 6,023,338 to Bareket, all of which areincorporated by reference as if fully set forth herein.

[0197] In an additional embodiment, a measurement device configured asan optical profilometer may be used to determine a height of a surfaceof a specimen. Optical profilometers may be configured to use lightscattering techniques, light sectioning, and various interferometricoptical profiling techniques as described herein. An opticalprofilometer may be configured to measure interference between light ontwo beam paths. As a height of a surface of a specimen changes, one ofthe beam path lengths may change thereby causing a change in theinterference patterns. Therefore, the measured interference patterns maybe used to determine a height of a surface of a specimen. A Nomarskipolarization interferometer may be suitable for use as an opticalprofilometer.

[0198] In an embodiment, an optical profilometer may include a lightsource such as a tungsten halogen bulb configured to emit an incidentbeam. The light source may be configured to emit light of variouswavelengths such as infrared light, ultraviolet light, and/or visiblelight. The light source may also be configured to emit coherent lightsuch as light produced from a laser. The optical profilometer may alsoinclude optical components configured to direct the light to a surfaceof a specimen. Such optical components may include any of the opticalcomponents as described herein. The optical profilometer may furtherinclude a rotating analyzer configured to phase shift theelectromagnetic radiation, a charge coupled device (“CCD”) camera, aframe grabber, and electronic processing circuits. A frame grabber is adevice that may be configured to receive a signal from a detector suchas a CCD camera and to convert the signal (i.e., to digitize an image).A quarter wavelength plate and spectral filter may also be included inthe optical profilometer. A polarizer and Nomarski prism may beconfigured to illuminate the specimen with two substantiallyorthogonally polarized beams laterally offset on the specimen surface bya distance smaller than the resolution limit of the objectives. Afterreturned from the specimen, the light beams may be recombined by theNomarski prism.

[0199] In an embodiment, the optical profilometer may include aconventional interferometer. Interference patterns of the recombinedlight beams may be detected by the interferometer. The detectedinterference patterns may be used to determine a surface profile of thespecimen. An example of an optical profilometer is illustrated in U.S.Pat. No. 5,955,661 to Samsavar et al., which is incorporated byreference as if fully set forth herein. An example of a measurementdevice configured to determine overlay misregistration is illustrated inU.S. patent application Ser. No. 09/639,495, “Metrology System UsingOptical Phase,” to Nikoonahad et al., filed Aug. 14, 2000, and isincorporated by reference as if fully set forth herein.

[0200] In an embodiment, measurement device 78 may be configured as apattern recognition device. Measurement device 78 may include a lightsource such as a lamp configured to emit broadband light, which mayinclude visible and ultraviolet radiation. The measurement device mayalso include a beam splitting mirror configured to direct a portion ofthe light emitted by the light source to an objective thereby forming asample beam of light. The objective may include reflective objectiveshaving several magnifications. For example, the objective may include a15× Schwartzchild design all-reflective objective, a 4× Nikon CFN PlanApochromat, and a 1× UV transmissive objective. The three objectives maybe mounted on a turret configured to rotate such that one of the threeobjective may be placed in a path of the sample beam of light. Theobjective may be configured to direct the sample beam of light to asurface of a specimen.

[0201] Light returned from the surface of the specimen may pass backthrough the objective and the beam splitting mirror to a sample plate ofthe measurement device. The sample plate may be a reflective fusedsilica plate with an aperture formed through the plate. The lightreturned from the surface of the specimen may be partially reflected offof the sample plate and through a relatively short focal lengthachromat. The returned light may be reflected from a folding mirror to abeam splitter cube. The beam splitter cube may be configured to direct aportion of the returned light to a pentaprism. The pentaprism may beconfigured to reflect the portion of the returned light. The reflectedportion of the returned light may also pass through additional opticalcomponents of measurement device 78 such as a relatively long focallength achromat and a filter. The reflected portion of the returnedlight may pass to a folding mirror configured to direct the returnedlight to a video camera. In addition, the video camera may be configuredto generate a non-inverted image of the surface of the specimen. Anexample of a pattern recognition device is illustrated in U.S. Pat. No.5,910,842 to Piwonka-Corle et al., and is incorporated by reference asif fully set forth herein.

[0202] In an additional embodiment, the measurement device may beconfigured as a non-imaging scatterometer, a scatterometer, or aspectroscopic scatterometer. Scatterometry is a technique involving theangle-resolved measurement and characterization of light scattered froma structure. For example, structures arranged in a periodic pattern on aspecimen such as repeatable pattern features may scatter or diffractincident light into different orders. A diffracted light pattern from astructure may be used as a “fingerprint” or “signature” for identifyinga property of the repeatable pattern features. For example, a diffractedlight pattern may be analyzed to determine a property of repeatablepattern features on a surface of a specimen such as a period, a width, astep height, a sidewall angle, a thickness of underlying layers, and aprofile of feature on a specimen.

[0203] A scatterometer may include a light source configured to directlight of a single wavelength toward a surface of the specimen. Forexample, the light source may include a gas laser or a solid state laserdiode. Alternatively, the light source may be configured to direct lightof multiple wavelengths toward a surface of the specimen. As such, thescatterometer may be configured as a spectroscopic scatterometer. In anexample, the light source may be configured to emit broadband radiation.An appropriate broadband light source may include a white light sourcecoupled to a fiber optic cable configured to randomize a polarizationstate of the emitted light and may create a substantially uniformincident beam of light. Light emitted from the fiber optic cable maypass through a plurality of optical components arranged within themeasurement device. For example, light emitted from the fiber opticcable may pass through a slit aperture configured to limit a spot sizeof the incident beam of light. A spot size may be generally defined as asurface area of a specimen that may be illuminated by an incident beamof light. Light emitted from the fiber optic cable may also pass througha focusing lens. Furthermore, light emitted from the fiber optic cablemay be further passed through a polarizer configured to produce anincident beam of light having a known polarization state. The incidentbeam of light having a known polarization state may be directed to asurface of the specimen.

[0204] The scatterometer may also include a detection system that mayinclude a spectrometer. The spectrometer may be configured to measure anintensity of different wavelengths of light scattered from a surface ofa specimen. In an embodiment, the zeroth diffraction order intensity maybe measured. Although for some repeatable pattern features, measurementof higher diffraction order intensities may also be possible. A signalresponsive to the zeroth and/or higher diffraction order intensities atdifferent wavelengths generated by the spectrometer may be sent to aprocessor coupled to the spectrometer. The processor may be configuredto determine a signature of a structure on a surface of the specimen. Inaddition, the processor may be configured to determine a property ofrepeatable pattern features on the surface of the specimen. For example,the processor may be further configured to compare the determinedsignature to signatures of a database. Signatures of the database mayinclude signatures determined experimentally with specimens having knowncharacteristics and/or signatures determined by modeling. A property ofa repeatable pattern feature may include a period, a width, a stepheight, a sidewall angle, a thickness of underlying layers, and aprofile of the features on a specimen

[0205] As described above, the scatterometer may include a polarizercoupled to the illumination system. The polarizer may be furtherconfigured to transmit light emitted by a light source of theillumination system of a first polarization state and to reflect lightemitted by a light source of a second polarization state. In addition,the scatterometer may also include an analyzer coupled to the detectionsystem. The analyzer may be configured to transmit light ofsubstantially the same polarization state as the polarizer. For example,the analyzer may be configured to transmit light scattered from thesurface of the specimen having the first polarization state. In anadditional embodiment, the spectrometer may include a stage coupled tothe illumination system and the detection system. The stage may beconfigured as described herein. In this manner, characteristics ofrepeatable pattern features having substantially differentcharacteristics formed on a surface of a specimen may be determinedsequentially or simultaneously. Examples of measurement devices areillustrated in PCT Application No. WO 99/45340 to Xu et al., and isincorporated by reference as if fully set forth herein. Additionalexamples of measurement devices configured to measure light scatteredfrom a specimen are illustrated in U.S. Pat. No. 6,081,325 to Leslie etal., U.S. Pat. No. 6,201,601 to Vaez-Iravani et al., and U.S. Pat. No.6,215,551 to Nikoonahad et al., and are incorporated by reference as iffully set forth herein.

[0206] A measurement device such as a scatterometer may be either animaging device or a non-imaging device. In imaging devices, a lens maycapture light scattered from a surface of a specimen. The lens may alsopreserve spatial information encoded in the reflected light (e.g., aspatial distribution of light intensity). In addition, the scatterometermay include a detector configured as an array of light sensitive devicessuch as a charge-coupled device (“CCD”) camera, a CMOS photodiode, or aphotogate camera. Alternatively, in non-imaging devices, light from alight source may be directed to a relatively small area on a surface ofa specimen. A detector such as a photomultiplier tube, a photodiode, oran avalanche photodiode may detect scattered or diffracted light and mayproduce a signal proportional to the integrated light intensity of thedetected light.

[0207] In an additional embodiment, the measurement device may beconfigured as a bright field imaging device, a dark field imagingdevice, or a bright field and dark field imaging device. “Bright field”generally refers to a collection geometry configured to collectspecularly reflected light from a specimen. A bright field collectiongeometry may have any angle of incidence although typically it may havean angle of incidence normal to the specimen plane. A bright fieldimaging device may include a light source configured to direct light toa surface of a specimen. The light source may also be configured toprovide substantially continuous illumination of a surface of aspecimen. The light source may be, for example, a fluorescent lamp tube.Continuous illumination may also be achieved by a string of point lightsources coupled to a light diffusing element. The light source may alsoinclude any of the light sources as described herein.

[0208] A bright field imaging device may also include a bright fieldimaging system configured to collect bright field light propagatingalong a bright field path from the surface of a specimen. The brightfield light may include light specularly reflected from the surface ofthe specimen. The bright field imaging system may include opticalcomponents such as slit mirrors and an imaging lens. The slit mirrorsmay be configured to direct bright field light propagating along abright field path from the surface of a specimen to the imaging lens.The imaging lens may be configured to receive bright field lightreflected from the slit mirrors. The imaging lens may be, for example, afixed lens configured to reduce optical aberrations in the bright fieldlight and to reduce effects of intensity reduction at an edge of theimaging field. The imaging lens may also be configured to concentratelight passing through the lens onto light sensitive devices positionedbehind the imaging lens. The light sensitive devices may include, butare not limited to, an 8000 PN diode element line scan sensor array, aCCD camera, a TDI camera, or other suitable device type.

[0209] One or more output signals of the light sensitive devices may betransmitted to an image computer for processing. An image computer maybe a parallel processing system that may be commonly used by the machinevision industry. The image computer may also be coupled to a hostcomputer configured to control the bright field imaging device and toperform data processing functions. For example, data processingfunctions may include determining a presence of defects on a surface ofa specimen by comparing multiple output signals of the light sensitivedevices generated by illuminating multiple locations on the specimen.Multiple locations on the specimen may include, for example, two dies ofa specimen, as illustrated in FIG. 1.

[0210] “Dark field” generally refers to a collection geometry configuredto collect only scattered light from a specimen. “Double dark field”generally refers to an inspection geometry using a steep angle obliqueillumination, and a collection angle outside of the plane of incidence.Such an arrangement may include a near-grazing illumination angle and anear-grazing collection angle to suppress surface scattering. Thissuppression occurs because of the dark fringe (also known as the Weinerfringe) near the surface that may occur due to interfering incident andreflected waves. A dark field imaging device may include any of thelight sources as described herein. A double dark field device may beeither an imaging device or a non-imaging device.

[0211] A dark field imaging device may also include a dark field imagingsystem configured to collect dark field light propagating along a darkfield path from the surface of a specimen. The dark field imaging systemmay include optical components, an image computer, and a host computeras described herein. In this manner, a presence of defects on a surfaceof a specimen may be determined from a dark field image of the specimenas described herein. An example of an inspection system configured fordark field imaging is illustrated in PCT Application No. WO 99/31490 toAlmogy, and is incorporated by reference as if fully set forth herein.

[0212] In addition, a measurement device may include bright field anddark field light sources, which may include one or more light sources.Each of the light sources may be arranged at different angles ofincidence with respect to the surface of the specimen. Alternatively,each of the light sources may be arranged at the same angle of incidencewith respect to the surface of the specimen. The measurement device mayalso include bright field and dark field imaging systems as describedabove. For example, the measurement device may include one or moreimaging systems. Each of the imaging systems may be arranged atdifferent angles of incidence with respect to the surface of thespecimen. Alternatively, each of the imaging systems may be arranged atthe same angle of incidence with respect to the surface of the specimen.As such, the measurement device may be configured to operate as a brightfield and dark field imaging device. Each of the imaging systems may becoupled to the same image computer, which may be configured as describedabove. In addition, the image computer may be coupled to a hostcomputer, which may be configured as described above. The host computermay also be configured to control both the bright field components andthe dark field components of the measurement device.

[0213] The bright field, dark field, and bright field and dark fielddevices, however, may also be configured as non-imaging devices. Forexample, the detectors described above may be replaced with aphotomultiplier tube, a photodiode, or an avalanche photodiode. Suchdetectors may be configured to produce a signal proportional to theintegrated light intensity of the bright field light and/or the darkfield light.

[0214]FIG. 12 illustrates a schematic side view of an alternateembodiment of system 32 configured to determine at least two propertiesof a specimen during use. As will be further described herein, elementsof system 32 which may be similarly configured in each of theembodiments illustrated in FIGS. 3-7 and 12 have been indicated by thesame reference characters. For example, stage 42 may be similarlyconfigured in each of the embodiments illustrated in FIGS. 3-7 and 12.

[0215] As used herein, the terms “front side” and “back side” generallyrefer to opposite sides of a specimen. For example, the term, a “frontside”, or “upper surface,” of a specimen such as a wafer may be used torefer to a surface of the wafer upon which semiconductor devices may beformed. Likewise, the term, a “back side”, or a “bottom surface,” of aspecimen such as a wafer may be used to refer to a surface of the waferwhich is substantially free of semiconductor devices.

[0216] System 32 may include stage 42 configured to support specimen 40.As shown in FIG. 12, stage 42 may contact a back side of the specimenproximate to an outer lateral edge of the specimen to support thespecimen. For example, the stage may include a robotic wafer handlerconfigured to support a specimen. In alternative embodiments, an uppersurface of the stage may be configured to have a surface area less thana surface area of the back side of the specimen. In this manner, stage42 may contact a back side of the specimen proximate to a center, or aninner surface area, of the specimen to support the specimen. In anexample, the stage may include a vacuum chuck or an electrostatic chuck.Such a stage may be disposed within a process chamber of a process toolsuch as a semiconductor fabrication process tool and may be configuredto support the specimen during a process step such as a semiconductorfabrication process step. Such a stage may also be included in any ofthe other measurement devices as described herein.

[0217] System 32 may include a measurement device coupled to the stage.The measurement device may include a plurality of energy sources 44. Afirst of the plurality of energy sources 44 may be configured to directenergy toward front side 40 a of specimen 40. As shown in FIG. 12, twodetectors 46 a and 46 b may be coupled to the first of the plurality ofenergy sources. The two detectors may be positioned at different angleswith respect to the first energy source. In this manner, each of thedetectors may be configured to detect different types of energypropagating from front side 40 a of specimen 40. For example, detectors46 b may be configured to detect dark field light propagating from thefront side of specimen 40. In addition, detector 46 a may be configuredto detect bright field light propagating from the front side of specimen40. In an alternative embodiment, however, a single detector, eitherdetector 46 a or detector 46 b, may be included in the measurementdevice and may be coupled to the first energy source. Additionalcomponents such as component 48 may also be coupled to the first energysource. For example, component 48 may include any of the opticalcomponents as described herein.

[0218] The measurement device may also include component 50. Component50 may include, for example, a beam splitter configured to transmitlight from the light source toward specimen 40 and to reflect lightpropagating from specimen 40 toward detector 46 a. The measurementdevice may also include additional component 52 coupled to detector 46a. Component 52 may be configured as described in above embodiments. Inaddition, such a component may also be coupled to detector 46 b. Theposition and the configuration of each of the components may vary,however, depending on, for example, the properties of the specimen to bemeasured with the system.

[0219] In an embodiment, a second of the plurality of energy sources 44may be configured to direct energy toward back side 40 b of specimen 40.The measurement device may also include detector 46 c coupled to thesecond energy source. In addition, multiple detectors may be coupled tothe second energy source. Detector 46 c may be positioned with respectto the second energy source such that a particular type of energypropagating from back side 40 b of specimen 40 may be detected. Forexample, detector 46 c may be positioned with respect to the secondenergy source such that dark field light propagating along a dark fieldpath from the back side 40 b of specimen 40 may be detected. Additionalcomponent 48 may also be coupled to the second energy source. Component48 may include any of the optical components as described herein.Furthermore, system 32 may include processor 54. Processor 54 may becoupled to each of the detectors 46 a, 46 b, and 46 c, as shown in FIG.12. The processor may be configured as described herein.

[0220] According to the above embodiment, therefore, system 32 may beconfigured to determine at least two properties on at least two surfacesof a specimen. For example, system 32 may be configured to determine apresence of defects on a front side of the specimen. In addition, system32 may be configured to determine a presence of defects on a back sideof the specimen. Furthermore, the system may be configured to determinea presence of defects on an additional surface of the specimen. Forexample, the system may be configured to determine a presence of defectson a front side, a back side, and an edge of the specimen. As usedherein, the term “an edge” of a specimen generally refers to an outerlateral surface of the specimen substantially normal to the front andback sides of the specimen. Furthermore, the system may also beconfigured to determine a presence of defects on more than one surfaceof the specimen simultaneously.

[0221] In an additional embodiment, the system may also be configured todetermine a number of defects on one or more surfaces of a specimen, alocation of defects on one or more surfaces of a specimen, and/or a typeof defects on one or more surfaces of a specimen sequentially orsubstantially simultaneously. For example, the processor may beconfigured to determine a number, location, and/or type of defects onone or more surfaces of a specimen from the energy detected by themeasurement device. Examples of methods for determining the type ofdefect present on a surface of a specimen are illustrated in U.S. Pat.No. 5,831,865 to Berezin et al., and is incorporated by reference as iffully set forth herein. Additional examples of methods for determiningthe type of defects present on a surface of a specimen are illustratedin WO 99/67626 to Ravid et al., WO 00/03234 to Ben-Porath et al., and WO00/26646 to Hansen, and are incorporated by reference as if fully setforth herein.

[0222] Furthermore, processor 54 may be further configured to determineat least three properties of the specimen. The three properties mayinclude a critical dimension of the specimen, an overlay misregistrationof the specimen, and a presence, a number, a location, and/or a type ofdefects on one or more surfaces of the specimen. In this manner, thesystem may be configured to determine a critical dimension of thespecimen, an overlay misregistration of the specimen, and a presence, anumber, a location, and/or a type of defects on one or more surfaces ofthe specimen sequentially or substantially simultaneously.

[0223] The system may be configured to determine micro and/or macrodefects on one or more surfaces of a specimen sequentially orsubstantially simultaneously. An example of a system configured todetermine macro and micro defects sequentially is illustrated in U.S.Pat. No. 4,644,172 to Sandland et al., which is incorporated byreference as if fully set forth herein. Macro-micro optics, as describedby Sandland, may be incorporated into a measurement device, as describedherein, which may be coupled to one stage. The stage may be configuredas described herein. In this manner, the macro-micro optics of Sandlandmay be configured to determine micro and/or macro defects on one or moresurfaces of a specimen substantially simultaneously. In addition, themacro-micro optics of Sandland may be configured to determine micro andmacro defects on one or more surfaces of a specimen sequentially whilethe specimen is disposed on a single stage. Alternatively, themeasurement device may include optical components configured asillustrated in U.S. Pat. No. 5,917,588 to Addiego, which is incorporatedby reference as if fully set forth herein. For example, a measurementdevice, as described herein, may include micro optics, as described bySandland, coupled to macro optics of the after develop inspection(“ADI”) Macro inspection system, as described by Addiego.

[0224] Micro defects may typically have a lateral dimension of less thanapproximately 25 μm. Macro defects may include yield-limiting largescale defects having a lateral dimension of greater than about 25 μm.Such large scale defects may include resist or developer problems suchas lifting resist, thin resist, extra photoresist coverage, incompleteor missing resist, which may be caused by clogged dispense nozzles or anincorrect process sequence, and developer or water spots. Additionalexamples of macro defects may include regions of defocus (“hot spots”),reticle errors such as tilted reticles or incorrectly selected reticles,scratches, pattern integrity problems such as over or under developingof the resist, contamination such as particles or fibers, andnon-uniform or incomplete edge bead removal (“EBR”). The term “hotspots” generally refers to a photoresist exposure defect that may becaused, for example, by a depth of focus limitation of an exposure tool,an exposure tool malfunction, a non-planar surface of a specimen at thetime of exposure, foreign material on a back side of a specimen or on asurface of a supporting device, or a design constraint. For example,foreign material on the back side of the specimen or on the surface of asupporting device may effectively deform the specimen. Such deformationof the specimen may cause a non-uniform focal surface during an exposureprocess. In addition, such a non-uniform focal surface may be manifestedon the specimen as an unwanted or missing pattern feature change.

[0225] Each of the above described defects may have a characteristicsignature under either dark field or bright field illumination. Forexample, scratches may appear as a bright line on a dark backgroundunder dark field illumination. Extra photoresist and incompletephotoresist coverage, however, may produce thin film interferenceeffects under bright field illumination. In addition, large defocusdefects may appear as a dim or bright pattern in comparison to a patternproduced by a laterally proximate die under dark field illumination.Other defects such as defects caused by underexposure or overexposure ofthe resist, large line width variations, large particles, comets,striations, missing photoresist, underdeveloped or overdeveloped resist,and developer spots may have characteristic signatures under brightfield and dark field illumination.

[0226] As shown in FIG. 1, a surface of specimen 10 may have a pluralityof defects. Defect 14 on the surface of specimen 10 may be incompleteresist coverage. For example, incomplete resist coverage may be causedby a malfunctioning coating tool or a malfunctioning resist dispensesystem. Defect 16 on the surface of specimen 10 may be a surfacescratch. Defect 18 on the surface of specimen 10 may be a non-uniformregion of a layer of resist. For example, such a non-uniform region ofthe resist may be caused by a malfunctioning coating tool or amalfunctioning post apply bake tool. Defect 20 on the surface ofspecimen 10 may be a hot spot. In addition, defect 22 on the surface ofspecimen 10 may be non-uniform edge bead removal (“EBR”). Each of thedefects described above may be present in any location on a surface ofspecimen 10. In addition, any number of each of the defects may also bepresent on the surface of the specimen.

[0227] Additional examples of methods and systems for determining apresence of defects on a surface of a specimen are illustrated in U.S.Pat. No. 4,247,203 to Levy et al., U.S. Pat. No. 4,347,001 to Levy etal., U.S. Pat. No. 4,378,159 to Galbraith, U.S. Pat. No. 4,448,532 toJoseph et al., U.S. Pat. No. 4,532,650 to Wihl et al., U.S. Pat. No.4,555,798 to Broadbent, Jr. et al., U.S. Pat. No. 4,556,317 to Sandlandet al., U.S. Pat. No. 4,579,455 to Levy et al., U.S. Pat. No. 4,601,576to Galbraith, U.S. Pat. No. 4,618,938 to Sandland et al., U.S. Pat. No.4,633,504 to Wihl, U.S. Pat. No. 4,641,967 to Pecen, U.S. Pat. No.4,644,172 to Sandland et al., U.S. Pat. No. 4,766,324 to Saadat et al.,U.S. Pat. No. 4,805,123 to Specht et al., U.S. Pat. No. 4,818,110 toDavidson, U.S. Pat. No. 4,845,558 to Tsai et al., U.S. Pat. No.4,877,326 to Chadwick et al., U.S. Pat. No. 4,898,471 to Vaught et al.,U.S. Pat. No. 4,926,489 to Danielson et al., U.S. Pat. No. 5,076,692 toNeukermans et al., U.S. Pat. No. 5,189,481 to Jann et al., U.S. Pat. No.5,264,912 to Vaught et al., U.S. Pat. No. 5,355,212 to Wells et al.,U.S. Pat. No. 5,537,669 to Evans et al., U.S. Pat. No. 5,563,702 toEmery et al., U.S. Pat. No. 5,565,979 to Gross, U.S. Pat. No. 5,572,598to Wihl et al., U.S. Pat. No. 5,604,585 to Johnson et al., U.S. Pat. No.5,737,072 to Emery et al., U.S. Pat. No. 5,798,829 to Vaez-Iravani, U.S.Pat. No. 5,633,747 to Nikoonahad, U.S. Pat. No. 5,822,055 to Tsai etal., U.S. Pat. No. 5,825,482 to Nikoonahad et al., U.S. Pat. No.5,864,394 to Jordan, III et al., U.S. Pat. No. 5,883,710 to Nikoonahadet al., U.S. Pat. No. 5,917,588 to Addiego, U.S. Pat. No. 6,020,214 toRosengaus et al., U.S. Pat. No. 6,052,478 to Wihl et al., U.S. Pat. No.6,064,517 to Chuang et al., U.S. Pat. No. 6,078,386 to Tsai et al., U.S.Pat. No. 6,081,325 to Leslie et al., U.S. Pat. No. 6,175,645 to Elyasafet al., U.S. Pat. No. 6,178,257 to Alumot et al., U.S. Pat. No.6,122,046 to Almogy, and U.S. Pat. No. 6,215,551 to Nikoonahad et al.,all of which are incorporated by reference as if fully set forth herein.Additional examples of defect inspection methods and apparatuses areillustrated in PCT Application Nos. WO 99/38002 to Elyasaf et al., WO00/68673 to Reinhron et al., WO 00/70332 to Lehan, WO 01/03145 toFeuerbaum et al., and WO 01/13098 to Almogy et al., and are incorporatedby reference as if fully set forth herein. Further examples of defectinspection methods and apparatuses are illustrated in European PatentApplication Nos. EP 0 993 019 A2 to Dotan, EP 1 061 358 A2 to Dotan, EP1 061 571 A2 to Ben-Porath, EP 1 069 609 A2 to Harvey et al., EP 1 081489 A2 to Karpol et al., EP 1 081 742 A2 to Pearl et al., and EP 1 093017 A2 to Kenan et al., which are incorporated by reference as if fullyset forth herein. As such, the embodiments described above may alsoinclude features of any of the systems and methods illustrated in all ofthe patents which have been incorporated by reference herein.

[0228] In a further embodiment, the systems as described herein may alsobe configured to determine a flatness measurement of the specimen.“Flatness” may be generally defined as an average of the topographiccharacteristics of an upper surface of the specimen across a surfacearea of the specimen. For example, the topographic characteristics mayinclude, but are not limited to, a roughness of an upper surface of aspecimen and a planar uniformity of an upper surface of a layer arrangedon the specimen. Roughness and planar uniformity of the upper surface ofa layer may vary depending on, for example, processes performed on thespecimen prior to measurement, which may include, in an example ofsemiconductor fabrication, etch, deposition, plating,chemical-mechanical polishing, or coating.

[0229] As described herein, a processor may be configured to determineat least three properties of the specimen from the detected energy. Thethree properties may include a critical dimension of the specimen, anoverlay misregistration of the specimen, and a flatness of the specimen.In addition, the process may be configured to determine four propertiesof the specimen from the detected energy. The four properties mayinclude critical dimension, overlay misregistration, flatness, and apresence, a number, a location, and/or a type of defects on thespecimen. As such, the system may be configured to determine a criticaldimension of the specimen, an overlay misregistration of the specimen, aflatness measurement, and/or a presence, a number, a location, and/or atype of defects on a surface of the specimen sequentially orsubstantially simultaneously.

[0230]FIG. 13 illustrates a schematic top view of an embodiment ofsystem 32 coupled to a semiconductor fabrication process tool. Forexample, the system may be coupled to lithography tool 130. Alithography tool, which may be commonly referred to a lithography trackor cluster tool, may include a plurality of process chambers 132, 144,146, 148, 150, 154, and 156. The number and configuration of the processchambers may vary depending on, for example, the type of wafersprocessed in the lithography tool. Examples of lithography tools andprocesses are illustrated in U.S. Pat. No. 5,393,624 to Ushijima, U.S.Pat. No. 5,401,316 to Shiraishi et al., U.S. Pat. No. 5,516,608 to Hobbset al., U.S. Pat. No. 5,968,691 to Yoshioka et al., and U.S. Pat. No.5,985,497 to Phan et al., and are incorporated by reference as if fullyset forth herein. Lithography tool 130 may be coupled to an exposuretool, which may include exposure chamber 134. A first portion of theprocess chambers may be configured to perform a step of a lithographyprocess prior to exposure of a resist. A second portion of the processchambers may be configured to perform a step of the lithography processsubsequent to exposure of the resist.

[0231] In an embodiment, lithography tool 130 may also include at leastone robotic wafer handler 136. Robotic wafer handler 136 may beconfigured to move a specimen from a first process chamber to a secondprocess chamber. For example, the robotic wafer handler may beconfigured to move along a direction generally indicated by vector 138.In addition, the robotic wafer handler may also be configured to rotatein a direction indicated by vector 140 such that a specimen may be movedfrom a first process chamber located on first side of the lithographytool to a second process chamber located on a second side of thelithography tool. The first side and the second side may be located onsubstantially opposite sides of the lithography tool. The robotic waferhandler may also be configured to move a specimen from lithography tool130 to exposure chamber 134 of the exposure tool. In this manner, therobotic wafer handler may move a specimen sequentially through a seriesof process chambers such that a lithography process may be performed onthe specimen.

[0232] The robotic wafer handler may be also configured to move specimen139 from cassette 141 disposed within load chamber 142 of thelithography tool to a process chamber of the lithography tool. Thecassette may be configured to hold a number of specimens which may beprocessed during the lithography process. For example, the cassette maybe a front opening unified pod (“FOUP”). The robotic wafer handler maybe configured to dispose the specimen in a process chamber such assurface preparation chamber 144. The surface preparation chamber may beconfigured to form an adhesion promoting chemical such ashexamethyldisilazane (“HMDS”) on the surface of the specimen. HMDS maybe deposited at a temperature of approximately 80° C. to approximately180° C. Subsequent to the surface preparation process, the robotic waferhandler may be configured to remove the specimen from surfacepreparation chamber 144 and place the specimen into chill chamber 146.As such, chill chamber 146 may be configured to reduce a temperature ofthe specimen to a temperature suitable for subsequent processing (e.g.,approximately 20° C. to approximately 25° C.).

[0233] In an additional embodiment, an anti-reflective coating may beformed on the surface of the specimen. The anti-reflective coating maybe formed on the specimen by spin coating followed by a post apply bakeprocess. Since the post apply bake process for an anti-reflectivecoating generally may involve heating a coated specimen fromapproximately 170° C. to approximately 230° C., a chill process may alsobe performed subsequent to this post apply bake process.

[0234] A resist may be also formed upon the specimen. The robotic waferhandler may be configured to place the specimen into resist applyprocess chamber 148. A resist may be automatically dispensed onto anupper surface of the specimen. The resist may be distributed across thespecimen by spinning the specimen at a high rate of speed. The spinningprocess may dry the resist such that the specimen may be removed fromthe resist apply process chamber without adversely affecting the coatedresist. The robotic wafer handler may be configured to move the specimenfrom resist apply process chamber 148 to post apply bake process chamber150. The post apply bake process chamber may be configured to heat theresist-coated specimen at a temperature of approximately 90° C. toapproximately 140° C. The post apply bake process may be used to drivesolvent out of the resist and to alter a property of the resist such assurface tension. Subsequent to the post apply bake process, the roboticwafer handler may be configured to move the specimen from the post applybake process chamber 150 to chill process chamber 146. In this manner, atemperature of the specimen may be reduced to approximately 20° C. toapproximately 25° C.

[0235] The robotic wafer handler may also be configured to move thespecimen from chill process chamber 146 to exposure chamber 134. Theexposure chamber may include interface system 152 coupled to lithographytool 130. Interface system 152 may include mechanical device 153configured to move specimens between the lithography tool and theexposure chamber. The exposure tool may be configured to align aspecimen in the exposure chamber and to expose the resist to energy suchas deep-ultraviolet light. In addition, the exposure tool may beconfigured to expose the resist to a particular intensity of energy, ordose, and a particular focus condition. Many exposure tools may beconfigured to alter dose and focus conditions across a specimen, forexample, from die to die. The exposure system may also be configured toexpose an outer lateral edge of the specimen. In this manner, resistdisposed proximal an outer lateral edge of the specimen may be removed.Removing the resist at the outer lateral edge of a specimen may reducecontamination in subsequent processes.

[0236] The robotic wafer handler may be further configured to move thespecimen from exposure chamber 134 to post exposure bake process chamber154. The specimen may then be subjected to a post exposure bake processstep. For example, the post exposure bake process chamber may beconfigured to heat the specimen to a temperature of approximately 90° C.to approximately 150° C. A post exposure bake process may drive achemical reaction in a resist, which may enable portions of the resistto be removed in subsequent processing. As such, the performance of thepost exposure process may be critical to the overall performance of thelithography process.

[0237] Subsequent to the post exposure process, the robotic waferhandler may be configured to move the specimen from post expose bakeprocess chamber 154 to chill process chamber 146. After the specimen hasbeen chilled, the robotic wafer handler may be configured to move thespecimen to develop process chamber 156. The develop process chamber maybe configured to sequentially dispense a developer chemical and water onthe specimen such that a portion of the resist may be removed. As such,resist remaining on the specimen may be patterned. Subsequent to thedevelop process step, the robotic wafer handler may be configured tomove the specimen from the develop process chamber to a hard bakeprocess chamber or a post develop bake process chamber. A hard bakeprocess may be configured to heat a specimen to a temperature ofapproximately 90° C. to approximately 130° C. A hard bake process maydrive contaminants and any excess water from the resist and thespecimen. The temperature of the specimen may be reduced by chillprocess as described herein.

[0238] In an embodiment, system 32 may be arranged laterally proximateto lithography tool 130 or another semiconductor fabrication processtool. As shown in FIG. 13, system 32 may be located proximate cassetteend 160 of lithography tool 130 or proximate exposure tool end 162 oflithography tool 130. In addition, a location of system 32 with respectto lithography tool 130 may vary depending on, for example, aconfiguration of the process chambers within lithography tool 130 andclean room constraints for space surrounding lithography tool 130. In analternative embodiment, system 32 may be disposed within lithographytool 130. A position of system 32 within lithography tool 130 may varydepending on, for example, a configuration of the process chamberswithin lithography tool 130. In addition, a plurality of systems 32 maybe arranged laterally proximate and/or disposed within lithography tool130. Each system may be configured to measure at least two differentproperties of a specimen. Alternatively, each system may be similarlyconfigured.

[0239] In either of these embodiments, robotic wafer handler 136 may beconfigured to move a specimen from lithography tool 130 to a stagewithin system 32. For example, robotic wafer handler 136 may beconfigured to move a specimen to a stage within system 32 prior to orsubsequent to a lithography process or between steps of a lithographyprocess. Alternatively, a stage within system 32 may be configured tomove a specimen from system 32 to lithography tool 130. In an example,the stage may include a wafer handler configured to move a specimen fromsystem 32 to a process chamber of the lithography tool 130. Furthermore,the stage of system 32 may be configured to move the specimen from afirst process chamber to a second process chamber within lithographytool 130. System 32 may also be coupled to the stage such that system 32may move with the stage from a first process chamber to a second processchamber within lithography tool 130. In this manner, the system may beconfigured to determine at least two properties of a specimen as thespecimen is being moved from a first process chamber to a second processchamber of lithography tool 130. An example of an apparatus and a methodfor scanning a substrate in a processing system is illustrated inEuropean Patent Application No. EP 1 083 424 A2 to Hunter et al., and isincorporated by reference as if fully set forth herein.

[0240] In an embodiment, system 32 may be configured as an integratedstation platform (“ISP”) system. An system may be configured as astand-alone cluster tool. Alternatively, the ISP system may be coupledto a process tool. FIG. 14 illustrates a perspective view of anembodiment of ISP system 158 that may be arranged laterally proximateand coupled to a semiconductor fabrication process tool such aslithography tool 130. In this manner, ISP system 158 may be configuredas a cluster tool coupled to lithography tool 130. For example, as shownin phantom in FIG. 13, ISP system 158 may be coupled to cassette end 160of lithography tool 130. FIG. 15 further illustrates a perspective viewof an embodiment of ISP system 158 coupled to cassette end 160 oflithography tool 130. As further shown in phantom in FIG. 13, ISP system158 may be also coupled to interface system 152 at exposure tool end 162of lithography tool 130. ISP system 158 may be further configured asillustrated in U.S. Pat. No. 6,208,751 to Almogy, which is incorporatedby reference as if fully set forth herein.

[0241] ISP system 158 may also be coupled to multiple process tools. Forexample, ISP system may be configured as a wafer buffer station betweena lithography tool and an etch tool. In this manner, the ISP system maybe configured to receive a specimen from the lithography tool subsequentto a lithography process and to send the specimen to an etch tool for anetch process. In addition, the ISP system may be configured to determineone or more properties of the specimen between the lithography and etchprocess. An example of a wafer buffer station is illustrated in PCTApplication No. WO 99/60614 to Lapidot, and is incorporated by referenceas if fully set forth herein. ISP system 158 may be further configuredas described by Lapidot.

[0242] ISP system 158 may include one or more measurement chambers. Forexample, the ISP system may have three measurement chambers 172, 174,176. A measurement device may be disposed within each measurementchamber. Each measurement device may be configured as described herein.The measurement chambers may be arranged in unit 160. Environmentalconditions within unit 160 may be controlled substantially independentlyfrom environmental conditions of the space surrounding ISP system 158.For example, environmental conditions within unit 160 such as relativehumidity, particulate count, and temperature may be controlled bycontroller computer 162 coupled to the ISP system. Such a unit may becommonly referred to as a “mini-environment.”`In addition, the one ormore measurement chambers may be arranged such that first measurementchamber 172 may be located below second measurement chamber 174 and suchthat second measurement 174 may be located below third measurementchamber 176. In this manner, a lateral area or “footprint” of the ISPsystem may be reduced. Furthermore, because ISP system 158 may becoupled to a semiconductor fabrication process tool, one front interfacemechanical standard (“FIMS”) drop may be coupled to both thesemiconductor fabrication process tool and the ISP system. As such, lessFIMS drops may be required in a fabrication facility (“fab”), and inparticular a 300 mm wafer fab. A FIMS drop may be a mechanical deviceconfigured to lower a FOUP from an overhead transportation system to asemiconductor fabrication process tool or a stand-alone inspection ormetrology tool. An example of a specimen transportation system isillustrated in U.S. Pat. No. 3,946,484 to Aronstein et al., and isincorporated by reference as if fully set forth herein.

[0243] In an embodiment, ISP system 158 may also include wafer handler164, receiving station 166, sending station 168, and buffer cassettestation 170. Receiving station 166 and sending station 168 may beconfigured such that a wafer handler of a semiconductor fabricationprocess tool may move a specimen to the receiving station and from thesending station. Buffer cassette station 170 may be configured to hold anumber of specimens depending on, for example, the relative input andoutput rates of a semiconductor fabrication process tool and ISP system158. Receiving station 166 may also be configured to alter a position ofa specimen such that the specimen may be substantially aligned to ameasurement device coupled to one of the measurement chambers. Forexample, the receiving station may be configured to detect a positioningmark such as a notch or a flat on the specimen and to move the specimenlinearly and/or rotatably. Buffer cassette station 170 and receivingstation 166 may be further configured a buffer station as illustrated inU.S. Pat. No. 6,212,691 to Dvir, which is incorporated by reference asif fully described herein.

[0244] The ISP wafer handler may be configured to remove a specimen fromthe receiving station. In addition, the ISP wafer handler may be furtherconfigured to move the specimen into one of the measurement chambers.Furthermore, the ISP wafer handler may be configured to move thespecimen into each measurement chambers in a sequence. In this manner,the ISP system may be configured to determine at least one property ofthe specimen in each of the plurality of measurement chambers in aparallel pipeline fashion.

[0245] In addition, the measurement device coupled to each measurementchamber may each be configured to determine a different property of aspecimen. For example, a measurement device coupled to first measurementchamber 172 may be configured to determine overlay misregistration of aspecimen. A measurement device coupled to second measurement chamber 174may be configured to determine a critical dimension of the specimen. Ameasurement device coupled to third measurement chamber 176 may beconfigured to determine a presence of macro defects on a surface of thespecimen. In alternative embodiments, a measurement device coupled toone of the measurement chambers may be configured to determine apresence of micro defects on a surface of the specimen or a thin filmcharacteristic of the specimen. A thin film characteristic may include athickness, an index of refraction, or an extinction coefficient asdescribed herein. Additionally, wafer handler 164 may be configured tomove the specimen from each measurement chamber to sending station 168.

[0246] Because ISP system 158 may be coupled to a semiconductorfabrication process tool such as lithography tool 130, properties of aspecimen may be determined faster than stand alone metrology andinspection tools. Therefore, a system, as described herein, may reducethe turn-around-time for determining properties of a specimen. A reducedturn-around-time may provide significant advantages for process control.For example, a reduced turn-around-time may provide tighter processcontrol of a semiconductor fabrication process than stand alonemetrology and inspection tools. Tighter process control may provide, forinstance, a reduced variance in critical dimension distributions offeatures on a specimen.

[0247] In addition, a system as described herein may be configured toadjust a drifting process mean to a target value and to reduce variancein critical dimension distribution of features on a specimen byaccounting for autocorrelation in the critical dimension data. Forexample, the critical dimension distribution of features on a specimenafter a develop process step may be reduced by altering a parameter ofan instrument coupled to an exposure tool or a develop process chamber.Such an altered parameter may include, but is not limited to, anexposure dose of an exposure process or a develop time of a developprocess. In addition, a linear model of control may be used and only theoffset terms may be updated or adapted. A linear model of control mayinclude a control function such as: y=Ax+c, where A and c areexperimentally or theoretically determined control parameters, x is acritical dimension of the specimen or another such determined propertyof the specimen, and y is a parameter of an instrument coupled to thesemiconductor fabrication process tool. Alternatively, a parameter of aninstrument coupled to a semiconductor fabrication tool such as theexposure tool may be altered by using an exponentially weighted movingaverage of the offset terms. A proportional and integral model ofcontrol may include a control function such as:c_(t)=αE_(t-del)+(1−α)c_(t)−1, wherein α is an experimentally ortheoretically determined control parameter, E_(t-del) is a determinedproperty of the specimen, and c_(t) is a parameter of an instrumentcoupled to the semiconductor fabrication process tool.

[0248] Variance in critical dimension distribution after develop may bedramatically reduced by a system as described herein. For example,adjusting a critical dimension mean to a target value of a lot (i.e.,25) of wafers using lot-to-lot feedback control may reduce criticaldimension variance by approximately 65%. In addition, lot-to-lotfeedback control may be effective if critical dimension within lotcritical dimensions are correlated. For example, low autocorrelation mayresult in no reduction of critical dimension variance using lot-to-lotfeedback control. High autocorrelation, however, may result in a 15%reduction of critical dimension variance using lot-to-lot feedbackcontrol. Controlling critical dimension variance using wafer-to-waferfeedback control, however, may be effective even if lot criticaldimensions are non correlated. For example, low autocorrelation mayresult in a 25% reduction in critical dimension variance usingwafer-to-wafer feedback control. Successful feedback control may dependon a proven APC frame work, robust process modeling, high throughputmetrology, efficient production methodology to reduce metrology delay,and enabling of process tool wafer based control. In addition, theeffect of turn-around-time on control of production wafers may also beexamined by using multiple lot averaged control to adjust drift in themean critical dimension. A target critical dimension may be set to beapproximately equal to the mean of the critical dimension data. As such,lot-to-lot control may result in an 8% improvement in critical dimensionvariance. In addition, wafer-to-wafer control may results in an 18%improvement in critical dimension variance.

[0249]FIG. 16 illustrates a schematic side view of an embodiment ofsystem 32 disposed within measurement chamber 178. For example, system32 may include stage 42 disposed within measurement chamber 178. Inaddition, system 32 may include measurement device 34 disposed withinmeasurement chamber 178. Measurement chamber 178 may also includeopening 179 and a mechanical device (not shown) coupled to opening 179.In addition, measurement chamber 178 may include a plurality of suchopenings and a mechanical device coupled to each of the openings. Themechanical device may be configured to place an object such as a thinsheet of metal in front of opening 179 and to remove the object from theopening. In this manner, the mechanical device may be configured toprovide access to the measurement chamber, for example, when specimen 40is being disposed upon stage 42 through opening 179. Specimen 40 may bedisposed upon stage 42 by any of the methods or devices as describedherein. Subsequent to disposing specimen 40 on stage 42, the object maybe placed in front of opening 179 by the mechanical device such thatenvironment conditions such as relative humidity, temperature, andparticulate count within the measurement chamber may be maintainedand/or controlled. In this manner, system 32 may be configured todetermine a property of specimen 40 under maintained and/or controlledenvironmental conditions, which may increase the reliability of thesystem. In addition, exposure of components of system 32 including, butnot limited to, measurement device 34 to environmental conditionsexternal to the measurement chamber may be reduced. As such,contamination and/or degradation of the components of system 32 may bereduced thereby reducing the probability of system failure, associatedmaintenance and repair costs, and increasing a lifetime of the system.

[0250] The system may also include processor 54 disposed outside ofmeasurement chamber 178. In this manner, the processor, which may beconfigured as a controller computer, may be accessed outside of themeasurement chamber, for example, by an operator. In addition, arrangingprocessor 54 external to measurement chamber 178 may reduce thedimensions of measurement chamber 178. By reducing the dimensions ofmeasurement chamber 178, system 32 may be coupled to or disposed withina larger number of process tools than a conventional metrology and/orinspection system. For example, measurement chamber 178 may beconfigured to have approximately the same dimensions as a processchamber of a semiconductor fabrication process tool. In this manner,system 32 may be disposed within an existing semiconductor fabricationprocess tool, as shown in FIG. 13, without altering an arrangement ofthe process chambers of the semiconductor fabrication process tool. Forexample, measurement chamber 178 may disposed within the tool byreplacing one of the process chambers with measurement chamber 178.System 32 may be further configured as described herein.

[0251]FIG. 17 illustrates a schematic side view of an embodiment ofmeasurement chamber 178 coupled to a process tool such as asemiconductor fabrication process tool. As shown in FIG. 17, measurementchamber 178 may be arranged laterally proximate to process chamber 180of a process tool. Alternatively, the measurement chamber may bearranged vertically proximate to process chamber 180. For example, themeasurement chamber may be arranged above or below process chamber 180.As shown in FIG. 17, process chamber 180 may be a resist apply chamberas described herein. For example, specimen 182 may be disposed uponstage 184. Stage 184 may be configured as a motorized rotating chuck orany other device known in the art. A resist may be dispensed ontospecimen 182 from dispense system 186. Dispense system 186 may becoupled to a resist supply and may include a number of pipes and/orhoses and controls such as valves such that resist may be transferredfrom the resist supply to specimen 182. The dispense system may also becoupled to a controller computer, which may be configured to control thedispense system. For example, the controller computer may includeprocessor 54 as described herein. Stage 184 may be configured to rotatesuch that the dispensed resist may spread over specimen 182 and suchthat solvent may evaporate from the dispensed resist. Process chamber180, however, may include any of the process chambers as describedherein. In addition, measurement chamber 178, process chamber 180,processor 54 may be arranged in a modular architecture as illustrated inPCT Application No. WO 99/03133 to Mooring et al., which is incorporatedby reference as if fully set forth herein.

[0252] In an embodiment, therefore, specimen 182 may be easily andquickly be moved from process chamber 180 to measurement chamber 178 (orfrom measurement chamber 178 to process chamber 180) by a robotic waferhandler of a process tool, by a wafer handler of an ISP system, or bystage 42 as described herein. In this manner, system 32 may beconfigured to determine at least a first property and a second propertyof the specimen prior between process steps of a process. For example,in a lithography process, first and second properties of a specimen maybe determined subsequent to resist apply and prior to exposure. In anadditional example, first and second properties of a specimen may bedetermined subsequent to exposure and prior to post exposure bake. In afurther example, first and second properties of a specimen may bedetermined subsequent to post exposure bake and prior to develop. Firstand second properties of a specimen may also be determined subsequent todevelop. Furthermore, such a system may be configured to determine atleast a first property and a second property of the specimen prior tosubstantially an entire process or subsequent to substantially an entireprocess. A system configured as described above may also have arelatively short turn-around-time. As described above, therefore, such asystem may provide several advantages over currently used metrology andinspection systems.

[0253] A process tool such as a semiconductor fabrication process toolmay include a number of support devices such as stage 184, as shown inFIG. 17, which may be configured to support the specimen during aprocess step. For example, a support device may be disposed within eachprocess chamber coupled to a process tool. Appropriate support devicesmay include, but are not limited to, a spin coater, a bake plate, achill plate, an exposure stage, and an electrostatic chuck in an etch ordeposition chamber. Each support device may have an upper surface uponwhich a specimen may be disposed. An upper surface of each supportdevice may be substantially parallel to an upper surface of othersupport devices arranged within the process tool, i.e., orientations ofeach support device within each process chamber, respectively, may besubstantially parallel. In an embodiment, a stage of a system, asdescribed herein, may also have an upper surface which may besubstantially parallel to an upper surface of a support device of theprocess tool, as shown in FIG. 17, i.e., an orientation of the stagewithin a measurement chamber such as measurement chamber 178 may besubstantially parallel to orientations of each support device withineach process chamber, respectively.

[0254] In an alternate embodiment, a stage of a system, as describedherein, may have an upper surface that may be arranged at an angle withrespect to an upper surface of a support device, i.e., an orientation ofthe stage within a measurement chamber may be at an angle toorientations of each support device within each process chamber,respectively. For example, an upper surface of the stage may be arrangedat a 90° angle with respect to an upper surface of a support device of aprocess tool. Alternatively, an upper surface of the stage may also bearranged at an angle of less than 90° with respect to an upper surfaceof the support device. At such angles, a vacuum may be pulled on asurface of a specimen to maintain a position of the specimen on thestage.

[0255] An orientation of a measurement device disposed within ameasurement chamber with such a stage may also be altered. For example,the measurement device may be arranged at an angle such that a spatialrelationship (i.e., any of the spatial arrangements shown in FIGS. 3-7,11 a-12, and 16-17) between the measurement device and the stage may bemaintained. Such a stage may also be arranged at an angle with respectto an illumination system and a detection system of the measurementdevice. In this manner, a specimen may be tilted with respect to themeasurement device during inspection or metrology processes which may beperformed by a system as described herein.

[0256] An angled orientation of the stage within a measurement chamberas described above may allow a lateral dimension of the measurementchamber to be reduced. For example, the illumination system, thedetection system, and the stage may be arranged in a more compactgeometry than conventional inspection and metrology systems. Inparticular, a lateral dimension of a measurement chamber may be greatlyreduced for relatively large diameter specimen such as 200 mm wafers and300 mm wafers. As such, disposing such a measurement device within asemiconductor fabrication process tool may be less likely to requireretrofitting of the semiconductor fabrication process tool. Therefore,existing configurations of semiconductor fabrication process tools maybe less likely to prohibit disposing the system within the semiconductorfabrication process tool.

[0257]FIG. 18 illustrates a schematic side view of an embodiment ofsystem 32 coupled to process chamber 188. The process chamber may be aprocess chamber coupled to a semiconductor fabrication process tool.Stage 190 may be disposed within process chamber 188. Stage 190 may beconfigured to support specimen 192, for example, during a semiconductorfabrication process step. System 32 may be coupled to process chamber188 such that measurement device 34 may be external to process chamber188 but may be coupled to stage 190 disposed within the process chamber.For example, process chamber 188 include one or more relatively smallsections 194 of a substantially transparent material disposed within oneor more walls of the process chamber. Sections 194 may be configured totransmit a beam of energy from an energy source of the measurementdevice outside the process chamber to a surface of a specimen within theprocess chamber. Sections 194 may also be configured to transmit a beamof energy returned from the surface of the specimen to a detector ofmeasurement device 34 outside process chamber 188. The substantiallytransparent material may have optical or material properties such thatthe beam of energy from the energy source and the returned beam ofenergy may pass through sections 194 of the process chamber withoutundesirably altering the properties of the directed and returned energybeams. For example, undesirably altering the properties of the energybeams may include, but is not limited to, altering a polarization or awavelength of the energy beams and increasing chromatic aberration ofthe energy beams. In addition, sections 194 may be configured such thatdeposition of process residue from a chemical using during processing ofa specimen may be reduced as described in PCT Application No. 99/65056to Grimbergen et al., which is incorporated by reference as if fully setforth herein.

[0258] An appropriate system and method for coupling a measurementdevice external to a process chamber and a stage disposed within theprocess chamber may vary, however, depending on, for example, aconfiguration of the process chamber and/or a configuration of themeasurement device. For example, the placement and dimensions ofrelatively small section 194 disposed within the walls of processchamber 188 may vary depending on the configuration of the componentswithin the process chamber. As such, exposure of measurement device 34to chemicals and environmental conditions within process chamber 188 maybe reduced, and even substantially eliminated. Furthermore, measurementdevice 34 may be externally coupled to process chamber 188 such that themeasurement device may not alter operation, performance, or control of aprocess step carried out in process chamber 188.

[0259] A measurement device, as shown in FIG. 18, may be configured todirect energy toward a surface of a specimen during a step of a processsuch as, in an example of a lithography process as described above,during a chill process subsequent to a post apply bake process, a postexposure bake process, a develop process, or any of the process steps asdescribed herein. In addition, the measurement device may be configuredto detect energy returned from the surface of the specimen during thestep of the process. The measurement device may be configured to detectenergy returned from a specimen substantially continuously or at varioustime intervals during a process step.

[0260] The system may include a processor configured to determine atleast a first and a second property of a specimen during a process step.For example, the processor may be configured to determine at least twoproperties of a specimen such as critical dimension and overlaymisregistration from the energy detected during a process step. In anadditional embodiment, the processor may also be configured to detectvariations in the energy detected by a measurement device during theprocess step. For example, the processor may be configured to obtain asignature characterizing the process step. The signature may include atleast one singularity representative of an end of the process step.

[0261] In an additional embodiment, the processor may also be coupled toa process tool such as a lithography tool and may be configured to altera parameter of an instrument coupled to the process tool. For example,the processor may alter a parameter of an instrument coupled to aprocess tool in response to the detected singularity as described above.The parameter of the instrument may be altered such that the processstep may be terminated subsequent to detection of the singularity. Inaddition, the processor may be configured to alter a parameter of aninstrument of a process tool in response to at least one determinedproperty of the specimen using an in situ control technique.

[0262] In an additional embodiment, the processor may be configured tomonitor a parameter of an instrument coupled to a process tool such as asemiconductor fabrication process tool. For example, the processor maybe coupled to a resist apply process chamber of a lithography tool andmay be configured to monitor a parameter of an instrument coupled to theresist apply chamber. In this manner, the processor may be configured tomonitor a spin speed of a motorized chuck of the resist apply chamber, adispense time of a dispense system of the resist apply chamber, and/or atemperature and a humidity of the resist apply chamber. The processormay be further configured as described in an example of a method andapparatus for providing real-time information identifying tools visitedby a wafer under inspection and the process parameters used at thosetools illustrated in European Patent Application No. EP 1 071 128 A2 toSomekh, which is incorporated by reference as if fully set forth herein.In addition, the processor may be configured to determine a relationshipbetween at least one determined property of a specimen and a monitoredparameters of an instrument coupled to a process tool. For example, theprocessor may be configured to determine a relationship between apresence of defects on the surface of a resist layer formed on aspecimen and a monitored temperature and/or humidity of the resist applychamber. Furthermore, the processor may be configured to alter themonitored parameter of the instrument in response to the determinedrelationship. For example, the processor may be configured to use adetermined relationship to alter a parameter of an instrument coupled tothe resist apply chamber such that the temperature and humidity of theresist apply chamber may be altered in response to a determined presenceof defects on the surface of the specimen.

[0263] The processor may also be configured to alter a parameter of aninstrument coupled to a process tool in response to at least onedetermined property using a feedback control technique. Furthermore, theprocessor may also be configured to alter a parameter of an instrumentcoupled to a process tool in response to at least one determinedproperty using a feedforward control technique. For example, the systemmay be configured to determine at least two properties of a specimenduring a develop process. The processor may be configured to alter aparameter of an instrument coupled to the develop process chamber inresponse to at least one of the determined properties during developingof the specimen or prior to developing additional specimens. Inaddition, the processor may be configured to alter a parameter of aninstrument coupled to a process chamber such as a hard bake processchamber in response to at least one of the determined properties priorto further processing of the specimen in the process chamber. Inaddition examples, the processor may be configured to alter a parameterof an instrument coupled to an exposure tool, a post exposure bakechamber, a resist apply chamber, and any other tools or chamber includedin the cluster tool.

[0264] In a further embodiment, the processor maybe configured tocompare at least one determined property of the specimen and propertiesof a plurality of specimens. For example, the plurality of specimens mayinclude product wafers processed prior to the processing of thespecimen. At least two properties of the plurality of specimens may bedetermined prior to processing of the specimen with a system asdescribed herein. The plurality of specimens may also include specimenswithin the same lot as the specimen or specimens within a different lotthan the specimen. As such, the processor may be configured to monitor aprocess such as a semiconductor fabrication process using awafer-to-wafer comparison technique or a lot-to-lot comparisontechnique. In this manner, the processor may be configured to monitorthe performance of the process and to determine if the performance ofthe process or a process tool is drifting. A method an apparatus forreducing lot to lot CD variation in semiconductor wafer processing isillustrated in European Patent Application No. EP 1 065 567 A2 to Su,and is incorporated by reference as if fully set forth herein.

[0265] Alternatively, the processor may be configured to compare atleast one determined property of the specimen to a predetermined rangefor at least the one property. The predetermined range may bedetermined, for example, from design constraints for the specimen. Inaddition, the predetermined range may be determined by using astatistical process control method to determine an average of at leastthe one property and additional statistical parameters such as avariance of at least the one property for a process. In addition, theprocessor may be configured to generate an output signal if at least theone determined property is outside of a predetermined range. The outputsignal may be a visual signal such as a signal displayed on a monitorcoupled to the processor. The monitor may be disposed in a semiconductorfabrication facility such that the displayed signal may be viewed by anoperator. Alternatively, the output signal may be any signal known inthe art signal such as an audible signal or a plurality of signals.

[0266] In addition, subsequent to determining the property of thespecimen, the processor may be configured to determine if additionalprocessing of the specimen may be performed. Additional processing ofthe specimen may be altered or performed to alter the determinedproperty. Such additional processing may be commonly referred to as“reworking.” In this manner, the processor may be configured to makeautomated rework decisions. For example, such additional processing mayinclude reprocessing the specimen such that one or more process steps,which may have already been performed on the specimen, may be repeated.In addition, a parameter of one or more instruments coupled to one ormore process chambers configured to perform the repeated process stepsmay be altered in response to the determined property using afeedforward control technique. In this manner, such additionalprocessing of the specimen may be configured to alter the determinedproperty by altering a parameter of the instrument in response to thedetermined property. As such, such additional processing may alter thedetermined property such that the determined property may besubstantially equal to an expected value for the property or may bewithin a predetermined range for the property.

[0267] In an additional embodiment, the processor may be configured toalter a sampling frequency of a measurement device in response to atleast one determined property of a specimen. For example, if adetermined property is substantially different than an expected valuefor the property, or if a determined property is outside of apredetermined range for the property, then the processor may increasethe sampling frequency of the measurement device. The sampling frequencymay be altered, for example, such that the measurement device isconfigured to direct and detect energy from an increased number oflocations on the specimen. In this manner, the sampling frequency may bealtered using an in situ control technique. In addition, the samplingfrequency of the measurement device may be altered to determinestatistical data of the determined property across the specimen such asan average of the determined property across the specimen. As such, thedetermined property may be classified as a random defect, a repeatingdefect, or as another such defect.

[0268] In an additional example, the sampling frequency of a measurementdevice may be altered such that subsequent measurement or inspection ofthe specimen may be increased. In this manner, the sampling frequencymay be altered using a feedforward control technique. Subsequentmeasurement or inspection may include transferring the specimen to anadditional system, which may be configured as described herein, tofurther examine the determined property of the specimen. An appropriateadditional system for such further examination of the determinedproperty of the specimen may include a system having a highersensitivity, a higher magnification, and/or an increased resolutioncapability than the system used to initially determine the property.

[0269] Alternatively, the sampling frequency may be altered such thatthe measurement device is configured to direct and detect energy from anincreased number of locations on additional specimens that may be in thesame lot as the specimen. Furthermore, the sampling frequency may bealtered such that the measurement device is configured to direct anddetect energy from an increased number of specimens in the same lot asthe specimen or from a number of specimens in an increased number oflots. In this manner, the sampling frequency may be altered using afeedback control technique. As such, the sampling frequency may bealtered using an in situ control technique, a feedforward controltechnique, or a feedback control technique. In addition, each of thesecontrol techniques may be used to alter the sampling frequency of ameasurement device on a within-wafer basis, a within-lot basis, and/or alot-to-lot basis.

[0270] In a further embodiment, the processor may be configured togenerate a database. The database may include a set of data that mayinclude at least first and second properties of a specimen. Theprocessor may be also be configured to calibrate the measurement deviceusing the database. For example, the set of data may include at least afirst and second property of a reference specimen. The measurementdevice may be configured to determine the first and second properties ofthe reference specimen. In this manner, the processor may be configuredto calibrate the measurement device by comparing the first and secondproperties of the reference specimen in the database and the determinedfirst and second properties of the reference specimen. For example, theprocessor may be configured to determine a correction factor from thecomparison of the first and second properties in the database and thedetermined first and second properties of the reference specimen. Inaddition, the processor may be configured to use the correction factorto determine first and second properties of additional specimens.

[0271] In an additional embodiment, the processor may be configured tomonitor the measurement device using the database. For example, thedatabase may include at least two properties of a specimen. The systemmay be configured to determine at least the two properties of thespecimen at predetermined intervals of time. The processor may beconfigured to compare at least the two properties of the specimendetermined at different times. As such, the processor may be configuredto determine if the performance of the measurement device is changingover time. In an additional example, the processor may be configured togenerate a set of data that may include at least a first property and asecond determined property of a plurality of specimens at predeterminedtime intervals. As such, the processor may also be configured to compareat least the first and second properties of a plurality of specimensusing the database. The first and second properties of a specimen or aplurality of specimens may be determined using the measurement device orusing a plurality of measurement devices. The processor may be furthercoupled to the plurality of measurement devices. Therefore, theprocessor may also be configured to calibrate the plurality ofmeasurement devices using the database as described above. In addition,the processor may also be configured to monitor the plurality ofmeasurement devices using the database as described above.

[0272] As described above, the processor may be coupled to a pluralityof measurement devices. In an additional embodiment, the processor maybe configured to alter a parameter of an instrument coupled to at leastone of the plurality of measurement devices. Each of the measurementdevices may be configured as a stand-alone metrology or inspectiondevice. Alternatively, each of the measurement devices may be coupled toat least one of a plurality of process tools as described herein.Furthermore, the processor may be coupled to at least one process tool.In this manner, the processor may be configured to alter a parameter ofan instrument coupled to at least one of the plurality of process tools.In addition, the processor may be configured to alter a parameter of aplurality of instruments. Each of the instruments may be coupled to oneof the plurality of process tools. The processor, however, may also beconfigured to alter a parameter of a plurality of instruments coupled toat least one of the plurality of process tools. For example, theprocessor may be configured to alter a parameter of the instrument inresponse to at least one of the determined properties using an in-situcontrol technique, a feedback control technique, and a feedforwardcontrol technique.

[0273] In an embodiment, the processor may include a local processorcoupled to the measurement device. The processor, however, may alsoinclude a remote controller computer or a remote controller computercoupled to a local processor. The local processor may be configured toat least partially process a signal generated by the measurement device.The signal may be generated by the detection system and may be an analogsignal or a digital signal. For example, the system may also include ananalog-to-digital converter. The analog-to-digital converter may beconfigured to convert a signal generated by the detection system suchthat a digital signal may be sent to the local processor or the remotecontroller computer. In addition, the remote controller computer may beconfigured to further process the at least partially processed signal.For example, the local processor may be configured to determine at leasta first property and a second property of a specimen. In this manner,the remote controller computer may be configured to further process atleast the two determined properties. For example, further processing thedetermined properties may include comparing the determined properties toa predetermined range for each property. In addition, the remotecontroller computer may be configured to generate an output signal ifthe determined properties are outside of the predetermined range.

[0274] The processor may also take various forms, including, forexample, a personal computer system, mainframe computer system,workstation, network appliance, Internet appliance, personal digitalassistant (“PDA”), television system, or other device. In general, theterm “processor” may be broadly defined to encompass any device having aprocessor, which executes instructions from a memory medium. Examples ofprocessors and control methods are illustrated in U.S. Pat. No.4,571,685 to Kamoshida, U.S. Pat. No. 5,859,964 to Wang et al., U.S.Pat. No. 5,866,437 to Chen et al., U.S. Pat. No. 5,883,374 to Mathews,U.S. Pat. No. 5,896,294 to Chow et al., U.S. Pat. No. 5,930,138 to Linet al., U.S. Pat. No. 5,966,312 to Chen, U.S. Pat. No. 6,020,957 toRosengaus et al., and are incorporated by reference as if fully setforth herein. Additional examples of processors and control methods areillustrated in PCT Application Nos. WO 99/59200 to Lamey et al. and WO00/15870 to Putnam-Pite et al., and are incorporated by reference as iffully set forth herein.

[0275]FIG. 19 illustrates an embodiment of a method for determining atleast two properties of a specimen. As shown in step 196, the method mayinclude disposing a specimen upon a stage. The stage may be coupled to ameasurement device. The measurement device may be configured asdescribed herein. For example, the measurement device may include anillumination system and a detection system. As shown in step 198, themethod may include directing energy toward a surface of a specimen usingthe illumination system. In addition, the method may include detectingenergy propagating from the surface of the specimen, as shown in step200. Furthermore, the method may include processing the detected energyto determine at least a first property and a second property of aspecimen, as shown in step 202. The first property may include acritical dimension of the specimen. A critical dimension may include,but is not limited to, a lateral dimension of a feature of the specimen.A feature may be formed on an upper surface of the specimen or in thespecimen as described herein. The second property may include an overlaymisregistration of the specimen. Overlay misregistration may include alateral displacement of a first feature on a first level of a specimenwith respect to a second feature on a second level of a specimen. Thefirst level may be formed above the second level.

[0276] The stage may be configured as described herein. For example, thestage may be configured to move laterally and rotatably. In this manner,the method may include laterally or rotatably moving the stage.Laterally or rotatably moving the stage may include arranging thespecimen such that energy from the measurement device may be directed toand may propagate from the specimen. The method may also includelaterally and/or rotatably moving the stage while energy is beingdirected toward a surface of the specimen and while energy is beingdetected from the surface of the specimen. As such, the method mayinclude moving the stage laterally and/or rotatably during measurementor inspection of a surface of a specimen. In this manner, light may bedirected to and may propagate from a plurality of locations on a surfaceof the specimen during measurement or inspection of a surface of thespecimen. As such, the system may be configured to determine at leasttwo properties of a specimen at multiple locations on the specimen. In afurther embodiment, the method may include rotating the stage whilemoving the measurement device linearly along a lateral dimension of aspecimen as described herein.

[0277] An illumination system of the measurement device may beconfigured as described herein. In addition, a detection system of themeasurement device may be configured as described herein. For example,the measurement device may include, but is not limited to, a non-imagingscatterometer, a scatterometer, a spectroscopic scatterometer, areflectometer, a spectroscopic reflectometer, a spectroscopicellipsometer, bright field imaging device, a dark field imaging device,a bright field and dark field imaging device, a coherence probemicroscope, an interference microscope, and an optical profilometer. Inaddition, the measurement device may include any combination of theabove devices. As such, the measurement device may be configured tofunction as a single measurement device or as multiple measurementdevices. Because multiple measurement devices may be integrated into asingle measurement device of a system, optical elements of a firstmeasurement device, for example, may also be optical elements of asecond measurement device.

[0278] In an embodiment, the method may include processing the detectedenergy to determine a third property of the specimen. A third propertyof the specimen may include, but is not limited to, a presence, anumber, a location, and/or a type of defects on the surface of thespecimen and a flatness measurement of the specimen. The defects mayinclude macro defects and/or micro defects as described herein. Inaddition, the method may include processing the detected energy todetermine a third property and a fourth property of a specimen. Forexample, the third property may include a presence, a number, alocation, and/or a type of defects on the surface of the specimen, andthe fourth property may include a flatness measurement of the specimen.As such, the method may be used to determine a critical dimension, anoverlay misregistration, a presence, a number, a location, and/or a typeof defects on the specimen, and a flatness measurement of the specimen.The method may include determining such properties of a specimensequentially or substantially simultaneously. In an additionalembodiment, the method may include directing energy toward a front sideand/or a back side of a specimen. As such, the method may also includedetecting energy propagating from the front side and/or the back side ofthe specimen, respectively. In this manner, the method may also includedetermining a presence, a number, a location, and/or a type of defectson a back side of the specimen. The defects may include macro defects.

[0279] In an embodiment, the stage and measurement device may be coupledto a process tool such as a semiconductor fabrication process tool. Thesemiconductor fabrication process tool may include a lithography tool asdescribed herein. The stage and measurement device may be arrangedlaterally proximate to the process tool as described herein. Forexample, the stage and measurement device may be disposed within an ISPsystem as described above. Alternatively, the stage and the measurementdevice may be disposed within the process tool. For example, the stageand measurement device may be disposed within a measurement chamber. Themeasurement chamber may be coupled to the process tool. For example, themeasurement chamber may be arranged laterally proximate to a processchamber of the process tool. Alternatively, the measurement chamber maybe arranged vertically proximate to a process chamber of the processtool. The measurement chamber may be configured to isolate themeasurement device and the stage from environmental conditions withinthe process tool.

[0280] In an embodiment, a support device may be disposed within aprocess chamber of the process tool. The support device may beconfigured to support the specimen during a process step. For example, asupport device disposed within a resist apply chamber of a lithographytool may include a chuck coupled to a motorized rotation device. Assuch, the support device may be configured to support the specimenduring a resist apply process step of a lithography process. A supportdevice may also include, for example, a bake plate disposed within apost apply bake chamber. The bake plate may be configured to support thespecimen during a post apply bake process step of the lithographyprocess. An upper surface of the support device may be substantiallyparallel to an upper surface of the stage of the system. Alternatively,an upper surface of the stage may be angled with respect to an uppersurface of the support device. The stage may also be configured to holda specimen in place at such an angle by drawing a vacuum through anupper surface of the stage or by an appropriate mechanical device. Inthis manner, a stage and measurement device may be substantiallyperpendicular to a support device disposed within a process chamber. Assuch, the system may be arranged essentially on its “side.” The term“side,” as used herein, generally refers to a lateral sidewall of aconventional metrology or inspection system. The orientation of thestage with respect to a support device of a process chamber may varydepending on, for example, the dimensions of a process tool and anarrangement of process chambers within the process tool. For example,the stage may be arranged at a perpendicular angle with respect to thesupport device such that the measurement device and stage may bedisposed within an existing process tool. In this manner, the system maybe disposed within a process tool without reconfiguration of the processchambers.

[0281] In an additional embodiment, the process tool may include a waferhandler configured as described herein. For example, the wafer handlermay be configured to remove a specimen from a process chamber subsequentto a step of a process. The wafer handler may also be configured toplace a specimen into a process chamber prior to a step of a process. Inthis manner, the wafer handler may be configured to move the specimenfrom a first process chamber to a second process chamber between stepsof a process. Disposing the specimen upon the stage, as shown in step196, may include moving the specimen from the process tool to the stageusing the wafer handler. In addition, the method may include moving thespecimen to the process tool subsequent to directing energy toward asurface of the specimen and detecting energy propagating from a surfaceof the specimen. In this manner, the method may include determining atleast two properties of the specimen between process steps of a process.

[0282] In an alternative embodiment, the stage of the system may bedisposed within a process chamber of the process tool. As such, thestage may be configured to function as a support device as describedherein and may support the specimen during a process step. In thismanner, disposing the specimen upon a stage, as shown in step 196, mayinclude disposing the specimen upon a support device within a processchamber of a process tool. The method may also include directing energytoward a surface of the specimen and detecting energy propagating fromthe surface of the specimen during a process step. In this manner, thesystem may be configured to determine at least two properties of aspecimen at predetermined time intervals during a process step. In anembodiment, the method may also include obtaining a signaturecharacterizing a process step. The signature may include at least onesingularity that may be representative of an end of the process step asdescribed herein. Furthermore, the method may include altering aparameter of an instrument coupled to a process tool in response to atleast one of the determined properties using an in situ controltechnique.

[0283] In an embodiment, the stage and the measurement device may becoupled to a wafer handler of a process tool. The wafer handler may beconfigured to support and move a specimen as described herein. In thismanner, the method may include directing energy toward a surface of thespecimen and detecting energy propagating from the surface of thespecimen during movement of the specimen. As such, the method may alsoinclude determining at least two properties of a specimen while moving aspecimen from a first process chamber to a second process chamber. Inthis manner, the method may include determining at least two propertiesof a specimen between any two process steps of a process. For example,the method may include chilling the specimen in a first process chamber.In addition, the method may include applying resist to the specimen inthe second process chamber.

[0284] In additional examples, the method may include chilling thespecimen in a first process chamber subsequent to a post apply bakeprocess step. The method may also include exposing the specimen in thesecond process chamber. In a further example, the method may includechilling the specimen in a first process chamber subsequent to a postexposure bake process and developing the specimen in a second processchamber. Additionally, the method may include developing the specimen ina first process chamber and baking the specimen in a second processchamber. Furthermore, the method may include developing the specimen ina first process chamber and receiving the specimen in a wafer cassettein the second process chamber. In this manner, the method may includedetermining at least two properties of a specimen between any twoprocess steps of a semiconductor fabrication process.

[0285] In an alternative embodiment, the measurement device may becoupled to a process chamber such that moving the specimen to or fromthe process chamber may include moving the specimen under themeasurement device. In this manner, the stage may include the waferhandler.

[0286] In an embodiment, the method may include comparing the determinedproperties of a specimen and determined properties of a plurality ofspecimens. For example, the method may include monitoring and evaluatinga semiconductor fabrication process using a wafer-to-wafer controltechnique. In addition, the method may include comparing properties of aspecimen determined at a first location on the specimen to properties ofthe specimen determined at a second location on the specimen. As such,the method may include monitoring and evaluating a semiconductorfabrication process using a within-wafer control technique.Alternatively, the method may also include comparing the determinedproperties of a specimen to a predetermined range for each property. Thepredetermined range may vary depending on, for example, designconstraints for each property such as an acceptable range of lateraldimensions for a feature on the specimen or an acceptable presence ofdefects on the surface of the specimen. The method may also includegenerating an output signal if the determined properties of the specimenare outside of the predetermined range for the property. The outputsignal may take various forms such as a visual signal and/or an audiblesignal. In addition, the output signal may be configured to indicatewhich of the determined properties is outside of the predetermined rangeand the extent to which the determined property is outside of thepredetermined range.

[0287] In an additional embodiment, the method may include altering asampling frequency of the measurement device in response to at least thedetermined first or second property of the specimen. For example, themethod may include increasing a sampling frequency of the measurementdevice in response to the determined properties. The sampling frequencymay be increased such that at least two properties may be determined atan increased number of locations on a single specimen. Alternatively,the sampling frequency may be increased such that at least twoproperties may be determined for an increased number of specimens suchas within a lot of wafers. In addition, the sampling frequency may beincreased such that at least two properties may be determined for anincreased number of lots.

[0288] In an embodiment, the method may also include altering aparameter of an instrument coupled to a measurement device in responseto at least one of the determined properties of the specimen using afeedback control technique. For example, if a property of the specimenis determined to be outside of a predetermined range, the method mayinclude increasing a sampling frequency of a measurement device prior todetermining at least two properties of additional specimens with themeasurement device. The additional specimens may have been subjected tosubstantially the same process step or process as the specimen having atleast one property outside of the predetermined range. In this manner,the method may include sampling an increased number of specimens suchthat data may be generated, which may be used to determine if theproperty of the specimen outside of the predetermined range is occurringsystematically or randomly.

[0289] In an additional embodiment, the method may include altering aparameter of an instrument coupled to a measurement device in responseto at least one of the determined properties of a specimen using afeedforward control technique. For example, the method may includedetermining at least two properties of a specimen subsequent to a firstprocess step of a process using a measurement device. The method mayalso include determining at least two properties of a specimensubsequent to a second process step of the process using the measurementdevice. If one of the properties of the specimen determined after thefirst process step is outside of the predetermined range, a samplingfrequency of the measurement device may be increased prior todetermining at least two properties after the second process step. Forexample, the second process step may include reprocessing the specimenor performing a process step of a process which has been altered inresponse to at least one of the properties determined after the firstprocess step. For example, the second process step may be configured toalter the property of the specimen such that the property may be withinthe predetermined range subsequent to the second process step. In thismanner, the method may be used to determine if the second process stephas altered the property of the specimen.

[0290] In an additional embodiment, the method may include generating adatabase. The database may include at least two determined properties ofa specimen. The method may also include calibrating the measurementdevice using the database. For example, the database may include atleast a first and second property of a reference specimen. In addition,the method may include determining the first and second properties ofthe reference specimen with the measurement device. In this manner, themethod may include calibrating the measurement device by comparing atleast one of the properties of the reference specimen in the databaseand at least one of the properties of the reference specimen determinedwith the measurement device. For example, the method may includedetermining a correction factor from the comparison of at least oneproperty of the reference specimen and using the correction factor todetermine at least the first and second properties of additionalspecimens.

[0291] In an additional embodiment, the method may include monitoringthe determined properties generated by the measurement device using thedatabase. For example, the database may include at least two propertiesof a specimen. The method may also include determining at least the twoproperties of the specimen at predetermined intervals of time. In thismanner, the method may be include comparing at least the two propertiesof the specimen in the database to at least the two properties of thespecimen determined at various times. As such, the method may includedetermining if the performance of the measurement device is changingover time. In an additional example, the method may include generating adatabase that may include at least two properties of a plurality ofspecimens. At least the two properties of the plurality of specimens maybe determined using the measurement device. As such, the method mayinclude comparing at least one of the determined properties of aplurality of specimens using the database. Alternatively, the first andsecond properties of the plurality of specimens may be determined usinga plurality of measurement devices. Therefore, the method may alsoinclude calibrating the plurality of measurement devices using thedatabase as described above. In addition, the method may also includemonitoring the determined properties generated by the plurality ofmeasurement devices as described above. In an embodiment, the method mayalso include altering a parameter of an instrument coupled to each ofthe plurality of measurement devices in response to at least one of thedetermined properties of a specimen. Altering a parameter of aninstrument coupled to each of a plurality of measurement devices mayinclude any of the embodiments described herein.

[0292] In a further embodiment, the method may include altering aparameter of an instrument coupled to a process tool such as asemiconductor fabrication process tool in response to at least one ofthe determined properties of the specimen using a feedback controltechnique. For example, the method may include altering a parameter ofan instrument coupled to a lithography tool in response to a determinedproperty as described above. In addition, the method may includealtering a parameter of an instrument in response to at least one of thedetermined properties of the specimen using an in situ controltechnique. For example, the method may include terminating a processstep at approximately a time that a singularity is detected by ameasurement device.

[0293] Additionally, the method may also include altering a parameter ofan instrument coupled to a process tool in response to at least one ofthe determined properties using a feedforward control technique. Forexample, the method may include determining at least two properties of aspecimen during a develop process in a develop process chamber. Inaddition, the method may include altering a parameter of an instrumentcoupled to a process chamber in response to at least one of thedetermined properties prior to further processing of the specimen in theprocess chamber. In addition, the method may include altering aparameter of an instrument coupled to each of a plurality of processtools in response to at least one of the determined properties of thespecimen. Altering the parameter of an instrument coupled to each of aplurality of process tools may include any of the embodiments describedherein.

[0294] In an additional embodiment, the method may include monitoring aparameter of an instrument coupled to a process tool. For example, themethod may include monitoring a parameter of an instrument coupled to aresist apply chamber of a lithography tool. In this manner, the methodmay include monitoring a spin speed of a motorized chuck of the resistapply chamber, a dispense time of a dispense system of the resist applychamber, and/or a temperature and a humidity of the resist applychamber. In addition, the method may include determining a relationshipbetween a determined property of a specimen and the monitored parameterof an instrument. For example, the method may include determining arelationship between a presence of defects on the surface of a resistformed on a specimen and the temperature and/or humidity of the resistapply chamber. Furthermore, the method may include altering themonitored parameter of the instrument in response to the relationship.For example, the method may include using a determined relationship toalter a parameter of an instrument coupled to the resist apply chambersuch that the temperature and humidity of the resist apply chamber maybe altered in response to a determined presence of defects on thesurface of the specimen. In an additional embodiment, the method mayinclude altering a parameter of an instrument coupled to each of aplurality of process tools in response to at least one determinedproperty of the specimen. Altering a parameter of an instrument coupledto each of a plurality of process tools may include any of theembodiments as described herein.

[0295] In an additional embodiment, processing the detected energy mayinclude using a processor to determine the first and second propertiesof a specimen. The processor may be coupled to the measurement device.The method may, therefore, include sending a signal representative ofthe detected energy to the processor. The processor may also beconfigured as described in above embodiments. For example, the processormay include a local processor coupled to a remote controller computer.The local processor may be coupled to a measurement device as describedin above embodiments. FIG. 20 illustrates an embodiment of a method fordetermining at least two properties of a specimen. For example, as shownin step 202, the method may include processing the detected energy todetermine a first property and a second property of the specimen using aprocessor. As shown in step 206, processing the detected light may alsoinclude at least partially processing the detected energy using a localprocessor. The method may also include sending the partially processeddetected energy from the local processor to a remote controllercomputer, as shown in step 208. In addition, the method may furtherinclude further processing the at least partially processed detectedlight using the remote controller computer, as shown in step 210.

[0296] In an embodiment, at least partially processing the detectedenergy may include determining at least two properties of a specimen. Assuch, further processing the detected energy may include processing thedetermined properties of the specimen. For example, processing thedetermined properties may include generating a database as described inabove embodiments. In addition, processing the determined properties mayinclude using at least one of the determined properties and arelationship between at least one property of the specimen and aparameter of an instrument coupled to a process tool to determine analtered parameter of the instrument. At least partially processing thedetected light and further processing the detected light may alsoinclude additional steps as described herein.

[0297] An embodiment also relates to a semiconductor device that may befabricated by a method, which may include any of the steps as describedherein. For example, an embodiment of a method for fabricating asemiconductor device is illustrated in FIG. 19. As shown in step 204,the method may include fabricating a portion of the semiconductor deviceon a specimen such as a wafer. Fabricating a portion of a semiconductordevice may include using a semiconductor fabrication process to processthe specimen. Appropriate semiconductor fabrication processes mayinclude, but are not limited to, lithography, etch, ion implantation,chemical vapor deposition, physical vapor deposition,chemical-mechanical polishing, and plating. In addition, fabricating aportion of the semiconductor device may include using a step of asemiconductor fabrication process to process the specimen.

[0298] In an embodiment, a method for fabricating a semiconductor devicemay also include disposing a specimen upon a stage, as shown in step196. In addition, a method for fabricating a semiconductor device mayfurther include directing energy toward a surface of the portion of thesemiconductor device formed on the specimen, as shown in step 198. Themethod may also include detecting energy propagating from a surface ofthe portion of the semiconductor device formed on the specimen, as shownin step 200. As further shown in step 202, the method may furtherinclude processing the detected light to determine at least twoproperties of the portion of the semiconductor device formed on thespecimen. Furthermore, a method for fabricating a semiconductor devicemay include any of the steps as described herein.

[0299]FIG. 21 illustrates an embodiment of a computer-implemented methodfor controlling a system to determine at least two properties of aspecimen. In an embodiment, the system may include a measurement device.As shown in step 212, the method may include controlling the measurementdevice, which may include an illumination system and a detection system.The measurement device may be coupled to a stage. The measurement devicemay further be configured as described herein. In addition, the methodmay include controlling the illumination system to direct energy towarda surface of a specimen, as shown in step 214. The method may furtherinclude controlling the detection system to detect energy propagatingfrom the surface of the specimen, as shown in step 216. Furthermore, themethod may include processing the detected energy to determine at leasta first property and a second property of the specimen, as shown in step218. The first property may include a critical dimension of thespecimen. The critical dimension may include, but is not limited to, alateral dimension, a height, and/or a sidewall angle of a feature formedon a surface of the specimen. Alternatively, the critical dimension mayinclude a lateral dimension, a height, and/or a sidewall angle of afeature formed within a specimen. The second property may include anoverlay misregistration of the specimen.

[0300] In an embodiment, the method may also include controlling thestage, which may be configured to support the specimen. For example, themethod may include controlling the stage to move the stage laterally,rotatably, or laterally and rotatably. The stage may be controlled tomove while the illumination system is directing energy toward thesurface of the specimen and while the detection system is detectingenergy propagating from the surface of the specimen.

[0301] In an additional embodiment, the method may also includeprocessing the detected energy to determine a third property of thespecimen. For example, the third property may include a presence ofdefects on a surface of the specimen. The third property may alsoinclude a number, a location, and/or a type of defects on a surface ofthe specimen. The defects may include micro defects, macro defects, ormicro and macro defects. In an embodiment, the method may also includecontrolling the illumination system to direct energy toward a back sideof the specimen. The method may further include controlling thedetection system to detect energy propagating from the back side of thespecimen. As such, the third property of the specimen may also include apresence of defects on the back side of the specimen. Such defects mayinclude macro defects. In addition, a third property may also include aflatness measurement of the specimen. In an additional embodiment, themethod may also include processing the detected light to determine athird and a fourth property of the specimen. In this manner, the thirdand fourth properties may include, but are not limited to, a presence, anumber, a location, and/or a type of defects on a surface of thespecimen and a flatness measurement of the specimen. In addition, themethod may include determining at least two of the propertiessubstantially simultaneously. The method, however, may also includedetermining all four of the properties described above sequentially orsubstantially simultaneously.

[0302] In an embodiment, the stage and the measurement device may becoupled to a process tool as described herein. For example, the stageand measurement device may be coupled to a lithography tool. The methodmay also include controlling a wafer handler of the process tool to movethe specimen from the process tool to the stage. The wafer handler maybe configured as described herein. Alternatively, the method may includecontrolling the stage to move the specimen from the system to theprocess tool. In a further embodiment, the method may also includecontrolling the stage to move the specimen from a first process chamberto a second process chamber. The first and second process chambers maybe configured as described herein. In this manner, the method may alsoinclude controlling the illumination system to direct energy toward asurface of the specimen while the stage is moving the specimen from thefirst process chamber to the second process chamber. In addition, themethod may also include controlling the detection system to detectenergy propagating from the surface of the specimen while the stage ismoving the specimen from the first process chamber to the second processchamber. As such, the method may include determining at least twoproperties of the specimen between any two process steps of a process.

[0303] In an additional embodiment, the method may include controllingthe illumination system to direct energy toward a surface of thespecimen during a process step. In addition, the method may also includecontrolling the detection system to detect energy propagating from thesurface of the specimen during the process step. As such, the method mayalso include processing the detected energy to determine at least twoproperties of the specimen at predetermined time intervals during theprocess step. In this manner, the method may also include controllingthe system to obtain a signature characterizing the process step. Thesignature may include at least one singularity, which may berepresentative of an end of the process step. In addition, the methodmay also include controlling the system to alter a parameter of aninstrument coupled to the process tool in response to the determinedproperties using an in situ control technique. Furthermore, thecomputer-implemented method may also include any of the steps asdescribed herein.

[0304] In an embodiment, a controller may be coupled to the system. Thecontroller may be a computer system configured to operate software tocontrol the system according to the above embodiments. The computersystem may include a memory medium on which computer programs may bestored for controlling the system and processing the detected energy.The term “memory medium” is intended to include an installation medium,e.g., a CD-ROM, or floppy disks, a computer system memory such as DRAM,SRAM, EDO RAM, Rambus RAM, etc., or a non-volatile memory such as amagnetic media, e.g., a hard drive, or optical storage. The memorymedium may include other types of memory as well, or combinationsthereof. In addition, the memory medium may be located in a firstcomputer in which the programs are executed, or may be located in asecond different computer that connects to the first computer over anetwork. In the latter instance, the second computer provides theprogram instructions to the first computer for execution. Also, thecomputer system may take various forms, including a personal computersystem, mainframe computer system, workstation, network appliance,Internet appliance, personal digital assistant (“PDA”), televisionsystem or other device. In general, the term “computer system” may bebroadly defined to encompass any device having a processor, whichexecutes instructions from a memory medium.

[0305] The memory medium may be configured to store a software programfor the operation of the system to determine at least two properties ofa specimen. The software program may be implemented in any of variousways, including procedure-based techniques, component-based techniques,and/or object-oriented techniques, among others. For example, thesoftware program may be implemented using ActiveX controls, C++ objects,JavaBeans, Microsoft Foundation Classes (“MFC”), or other technologiesor methodologies, as desired. A CPU, such as the host CPU, executingcode and data from the memory medium may include a means for creatingand executing the software program according to the methods describedabove.

[0306] Various embodiments further include receiving or storinginstructions and/or data implemented in accordance with the foregoingdescription upon a carrier medium. Suitable carrier media include memorymedia or storage media such as magnetic or optical media, e.g., disk orCD-ROM, as well as signals such as electrical, electromagnetic, ordigital signals, conveyed via a communication medium such as networksand/or a wireless link.

[0307] An embodiment relates to a system which may be configured todetermine at least two properties of a specimen, which may include apresence of defects on the specimen and a thin film characteristic ofthe specimen. For example, a presence of defects may be determined on afront side or a back side of a specimen as described herein. The defectsmay also include subsurface defects and/or a presence of macro defectson a backside of a specimen, which may include copper contaminationand/or resist contamination. In addition, the thin film characteristicmay include a thickness of a film such as copper. The system may beconfigured as described herein. In addition, the processor of such asystem may be configured to determine additional properties of thespecimen from energy detected by a measurement device. In an embodiment,the measurement device may be configured as a non-imaging scatterometer,a scatterometer, a spectroscopic scatterometer, a reflectometer, aspectroscopic reflectometer, an ellipsometer, a spectroscopicellipsometer, a bright field imaging device, a dark field imagingdevice, a bright field and dark field imaging device, a bright fieldnon-imaging device, a dark field non-imaging device, a bright field anddark field non-imaging device, a double dark field device, a coherenceprobe microscope, an interference microscope, an optical profilometer, adual beam spectrophotometer, a beam profile ellipsometer, or anycombination thereof. In this manner, the measurement device may beconfigured to function as a single measurement device or as multiplemeasurement devices. Because multiple measurement devices may beintegrated into a single measurement device of the system, opticalelements of a first measurement device, for example, may also be opticalelements of a second measurement device. Such a system may be coupled toa chemical-mechanical polishing tool, a deposition tool, an etch tool, acleaning tool such as a wet or dry stripping tool, or a thermal toolsuch as a furnace configured to perform rapid thermal processing (“RTP”)of a specimen as described herein. Examples of cleaning tools areillustrated in PCT Application No. WO 00/17907 and “Chemically AssistedLaser Removal of Photoresist and Particles from Semiconductor Wafers,”by Genut et al. of Oramir Semiconductor Equipment Ltd., Israel,presented at the 28^(th) Annual Meeting of the Fine Particle Society,Apr. 1-3, 1998, which are incorporated by reference as if fully setforth herein.

[0308] Spectroscopic ellipsometry may include focusing an incidence beamof polarized light on a specimen and monitoring a change in polarizationof at least a portion of the beam propagating from the specimen across abroad spectrum of wavelengths. Examples of spectroscopic ellipsometersare illustrated in U.S. Pat. No. 5,042,951 to Gold et al., U.S. Pat. No.5,412,473 to Rosencwaig et al., U.S. Pat. No. 5,581,350 to Chen et al.,U.S. Pat. No. 5,596,406 to Rosencwaig et al., U.S. Pat. No. 5,596,411 toFanton et al., U.S. Pat. No. 5,771,094 to Carter et al., U.S. Pat. No.5,798,837 to Aspnes et al., U.S. Pat. No. 5,877,859 to Aspnes et al.,U.S. Pat. No. 5,889,593 to Bareket et al., U.S. Pat. No. 5,900,939 toAspnes et al., U.S. Pat. No. 5,917,594 to Norton, U.S. Pat. No.5,973,787 to Aspnes et al., U.S. Pat. No. 6,184,984 to Lee et al., andare incorporated by reference as if fully set forth herein. Additionalexamples of spectroscopic ellipsometers are illustrated in PCTApplication No. WO 99/02970 to Rosencwaig et al. and is incorporated byreference as if fully set forth herein.

[0309] A measurement device configured as a spectroscopic ellipsometermay include a polarizer, which may be coupled to the detection system. Abeam propagating from the specimen pass through the polarizer. Prior topassing through the polarizer, the returned beam may have ellipticalpolarization. After passing through the polarizer, the beam may belinearly polarized. The reflected light then pass through an analyzercoupled to the detection system and into a dispersion element, or aspectrometer. The dispersion element may be configured to separate beamcomponents having different wavelengths. The separated components of thebeam may be detected by individual elements of a detector array. Thepolarizer is usually rotating such that a time varying intensity may bedetected by the elements of the detector array.

[0310] A processor of the system may receive a signal responsive to thedetected light from each element of the detector array and may processthe signal as described herein. For example, an intensity of light ateach element of the detector array may be converted to ellipsometricparameters, ψ and Δ, by mathematical equations known in the art. Theellipsometric parameters may be typically shown as tan ψ and cos Δ. Tanψ is the amplitude of the complex ratio of the s and p components of thereflectivity of the sample, and Δ is the phase of the complex ratio ofthe s and p components of the reflectivity of the sample. The term “scomponent” is used to describe the component for the polarized radiationhaving an electrical field perpendicular to the plane of incidence ofthe reflected beam. The term “p component” is used to describe thecomponent for the polarized radiation having an electrical field in theplane of incidence of the reflected beam. For very thin films, tan ψ maybe independent of thickness, and A may be linearly proportional to thethickness.

[0311] Software integrated into the processor of the system may beconfigured to convert the ellipsometric parameters, ψ and Δ, to anoptical property of a specimen using a mathematical, or optical, model.Typically, a personal computer having a software package operable torapidly performing data-fitting calculations such as a least-squaresfitting technique may be appropriate for this use. Because ellipsometricparameters including ψ and Δ may be determined at small incrementsacross a broad spectrum of wavelengths and at several angles, severalhundred data points may be included in the calculations. Severalsoftware packages configured for use with spectroscopic ellipsometersthat are capable of handling such a large amount of data arecommercially available. The processor that may be used to receive asignal responsive to the detected light from each element of thedetector array may be also used to perform the iterative data-fittingcalculations. Examples of such software packages may be incorporatedinto operating systems of spectroscopic ellipsometers, which have beenincluded by reference above, and are typically commercially available.

[0312] There are several optical models that may be used to analyzeellipsometric data. Examples, of such models include, but are notlimited to, a cauchy model, a harmonic oscillator model, and apolynomial series expansion model. An appropriate model, however, may bechosen based on specimen characteristics, desired optical properties ofthe specimen, and the computational difficulty associated with themodel. For example, the cauchy model is a relatively straightforwardmathematical model. The cauchy model, however, may not be valid forwavelengths at which a specimen exhibits absorption. Additionally,optical properties of several layers of a specimen may also bedetermined simultaneously by using an appropriate optical model or acombination of optical models. Therefore, when using spectroscopicellipsometry to analyze a specimen, one or more optical models may bemore appropriate for analysis than others.

[0313] Thicknesses, indexes of refraction, and extinction coefficientsfor a layer of a specimen, a portion of a layer of a specimen, orseveral layers of a specimen may be determined from ellipsometricparameters using an optical model. The index of refraction, “n,” isrelated to the speed of light as it moves through a medium and isdependent upon the wavelength of the light. The extinction coefficient,“k,” is also dependent upon wavelength and relates to absorption oflight by a medium. The extinction coefficient may also be used todetermine the absorption coefficient for a given wavelength. Furtherdiscussion of the ellipsometric parameters and the optical properties ofmaterials is illustrated in U.S. Pat. No. 4,905,170 to Forouhi, et al.and is incorporated by reference as if fully set forth herein.

[0314]FIG. 22 illustrates an embodiment of a system configured todetermine at least two properties of a specimen coupled tochemical-mechanical polishing tool 222. Chemical-mechanical polishing(“CMP”) may typically be used in the semiconductor industry to partiallyremove or planarize a layer on a specimen. Chemical-mechanical polishingmay include holding and/or rotating a specimen against a rotatingpolishing platen under controlled pressure. Chemical-mechanicalpolishing tool 222 may include polishing head 224 configured to holdspecimen 226 against polishing platen 228. Polishing head 224 mayinclude a number of springs 230 or another suitable mechanical device,which may be configured to apply an adjustable pressure to a back sideof specimen 226. Polishing head 224 may also be configured to rotatearound a central axis of the polishing head. In addition, polishing head224 may also be configured to move linearly with respect to thepolishing platen.

[0315] Polishing platen 228 may also include a polishing pad 232. Thepolishing pad may have a back layer, which may be configured such thatpolishing pad 232 may be securely coupled to polishing platen 228.Polishing pad 232 may also have an upper layer which may be configuredto contact and polish specimen 226. The upper layer of polishing pad 232may include, for example, an open cell foamed polyurethane material or apolyurethane layer having a grooved surface. The upper layer may alsoinclude additional abrasive materials or particles configured topartially remove or polish specimen 226. Polishing platen 228 may alsobe configured to rotate around a central axis of the polishing platen.For example, polishing platen 228 may be configured to rotate in a firstdirection, and polishing head 224 may be configured to rotate in asecond direction. The first direction may be substantially opposite tothe second direction.

[0316] Chemical-mechanical polishing tool 222 may also include dispensesystem 234. The dispense system may be configured to automaticallydispense a polishing chemical such as a chemical polishing slurry ontopolishing pad 232. A chemical polishing slurry may include abrasiveparticles and at least one chemical. For example, abrasive particles mayinclude fused-silica particles, and a chemical may include potassiumhydroxide. Alternatively, polishing pad 232 may be sufficiently abrasivesuch that the chemical polishing solution may be substantially free ofparticles. Suitable combinations of a polishing chemical and a polishingpad may vary depending on, for example, a composition and a topographyof an upper layer on specimen 226 which is being partially removed orplanarized and/or a composition and a topography of an underlying layer.

[0317] A system configured to determine at least two properties of aspecimen may include measurement device 220 coupled tochemical-mechanical polishing tool 222. The measurement device may beconfigured according to any of the embodiments described herein. Forexample, measurement device 220 may be a non-imaging dark field device,a non-imaging bright field device, a non-imaging dark field and brightfield device, a double dark field device, a dark field imaging device, abright field imaging device, a dark field and bright field imagingdevice, a spectroscopic ellipsometer a spectroscopic reflectometer, adual beam spectrophotometer, and a beam profile ellipsometer. Inaddition, the measurement device may include any combination of theabove devices. As such, the measurement device may be configured tofunction as a single measurement device or as multiple measurementdevices. Because multiple measurement devices may be integrated into asingle measurement device of the system, optical elements of a firstmeasurement device, for example, may also be optical elements of asecond measurement device.

[0318] The measurement device may be coupled to the chemical-mechanicalpolishing tool such that the measurement device may be external topolishing platen 228. In this manner, the measurement device may becoupled to chemical-mechanical polishing tool 222 such that themeasurement device may not interfere with the operation, performance, orcontrol of the chemical-mechanical polishing process. For example,polishing platen 228 and polishing pad 232 may be retrofitted such thata small section of a substantially optically transparent material 236may be disposed within the polishing platen and the polishing pad. Theconfiguration of the chemical-mechanical polishing tool, however, maydetermine the placement and dimensions of the transparent materialsection 236.

[0319] The small section of transparent material 236 may transmit anincident beam of light from a light source of measurement device 220outside the polishing platen to a surface of specimen 226 held in placeby polishing head 224 and light propagating from a surface of specimen226 to a detector of measurement device 220 external to the polishingplaten. The optically transparent material 236 may have optical ormaterial properties such that light from a light source of measurementdevice 220 and light propagating from a surface of specimen 226 may passthrough the transparent sections of the polishing platen and thepolishing pad without undesirably altering the properties of theincident and returned light beams.

[0320] Polishing chemicals such as chemical-polishing slurries, however,may include abrasive particles, chemicals, and material removed from thespecimen, which may interfere with light from the light source and lightpropagating from a surface of the specimen. In an embodiment, therefore,the section of transparent material 236 may be configured to function asa self-clearing objective. The self-clearing objective may include anoptical component configured to transmit light from a light sourcetoward a surface of specimen 226. A self-clearing objective may also beconfigured to flow a substantially transparent fluid between theself-clearing objective and the specimen. The flowing fluid may beconfigured to remove abrasive particles, chemicals, and material removedfrom the specimen such that light may be transmitted from themeasurement device to the specimen and from the specimen to a detectorof the measurement device without undesirable alterations in the opticalproperties of the light. Examples of self-clearing objectives areillustrated in U.S. patent application Ser. Nos. 09/396,143, “Apparatusand Methods for Performing Self-Clearing Optical Measurements,” toNikoonahad et al., and Ser. No. 09/556,238, “Apparatus and Methods forDetecting Killer Particles During Chemical Mechanical Polishing,” toNikoonahad et al., and are incorporated by reference as if fully setforth herein. In this manner, the measurement device may be coupled to astage (i.e., polishing platen 228) disposed within the process chamberand configured to support the specimen.

[0321] Examples of chemical-mechanical polishing systems and methods areillustrated in U.S. Pat. No. 5,730,642 to Sandhu et al., U.S. Pat. No.5,872,633 to Holzapfel et al., U.S. Pat. No. 5,964,643 to Birang et al.,U.S. Pat. No. 6,012,966 to Ban et al., U.S. Pat. No. 6,045,433 to Dviret al., U.S. Pat. No. 6,159,073 to Wiswesser et al., and U.S. Pat. No.6,179,709 to Redeker et al., and are incorporated by reference as iffully set forth herein. Additional examples of chemical-mechanicalpolishing systems and methods are illustrated in PCT Application Nos. WO99/23449 to Wiswesser, WO 00/00873 to Campbell et al., WO 00/00874 toCampbell et al., WO 00/18543 to Fishkin et al., WO 00/26609 to Wiswesseret al., and WO 00/26613 to Wiswesser et al., and European PatentApplication Nos. EP 1 022 093 A2 to Birang et al. and EP 1 066 925 A2 toZuniga et al., and are incorporated by reference as if fully set forthherein. An additional example of an integrated manufacturing toolincluding electroplating, chemical-mechanical polishing, clean and drystations is illustrated PCT Application No. WO 99/25004 to Sasson etal., and is incorporated by reference as if fully set forth herein.

[0322] An embodiment relates to a system that may be configured todetermine at least two properties of a specimen including a presence ofdefects on a specimen and a critical dimension of the specimen. Thesystem may be configured as described herein. For example, the systemmay include a processor coupled to a measurement device and configuredto determine at least a presence of defects and a critical dimension ofthe specimen from one or more output signals of the measurement device.In addition, the processor may be configured to determine otherproperties of the specimen from the one or more output signals. In anembodiment, the measurement device may include a non-imagingscatterometer, a scatterometer, a spectroscopic scatterometer, areflectometer, a spectroscopic reflectometer, an ellipsometer, aspectroscopic ellipsometer, a bright field imaging device, a dark fieldimaging device, a bright field and dark field imaging device, a brightfield non-imaging device, a dark field non-imaging device, a brightfield and dark field non-imaging device, a coherence probe microscope,an interference microscope, an optical profilometer, or any combinationthereof. Such a system may be coupled to a process tool such as alithography tool, an etch tool, a deposition tool, or a plating tool asdescribed herein.

[0323] In an embodiment, a system configured to determine at least apresence of defects on a specimen and a critical dimension of thespecimen may be coupled to an etch tool as described herein. Thepresence of defects may include a presence of defects on a back side ofthe specimen. In addition, the system may be further configured todetermine a number, a location, and/or a type of defects on thespecimen. The system may be coupled to the etch tool such that at leasta presence of defects on the specimen and a critical dimension of thespecimen may be determined prior to and subsequent to an etch process ora step of an etch process. As described herein, at least one of thedetermined properties may be used to alter a parameter of one or moreinstruments coupled to a process tool. For example, a determinedcritical dimension of the specimen may be used to alter a parameter ofone or more instruments coupled to a lithography tool using afeedforward control technique or a feedback control technique. Inaddition, a determined presence of defects on the specimen may be usedto alter a parameter of one or more instruments coupled to thelithography tool using a feedforward control technique of a feedbackcontrol technique.

[0324] In an embodiment, a system may be configured to determine atleast two properties of a specimen including a critical dimension of thespecimen and a thin film characteristic of the specimen. The system maybe configured as described herein. For example, the system may include aprocessor coupled to a measurement device. The processor may beconfigured to determine at least a critical dimension and a thin filmcharacteristic of the specimen from one or more output signals generatedby the measurement device. In addition, the processor may be configuredto determine other properties of the specimen from the one or moreoutput signals. In an embodiment, the measurement device may include anon-imaging scatterometer, a scatterometer, a spectroscopicscatterometer, a reflectometer, a spectroscopic reflectometer, anellipsometer, a spectroscopic ellipsometer, a photo-acoustic device, agrazing X-ray reflectometer, a bright field imaging device, a dark fieldimaging device, a bright field and dark field imaging device, acoherence probe microscope, an interference microscope, an opticalprofilometer, a dual beam spectrophotometer, a beam profileellipsometer, or any combination thereof. Such a system may be coupledto a process tool such as a lithography tool, an etch tool, a depositiontool, or a plating tool as described herein.

[0325] In addition, a system configured to determine at least a criticaldimension and a thin film characteristic of a specimen may be coupled toa chemical-polishing tool. For example, the processor may be configuredto determine a critical dimension of a feature on the specimen from oneor more output signals from a non-imaging scatterometer, ascatterometer, or a spectroscopic scatterometer. In addition, theprocessor may be configured to determine a thickness of a layer on thespecimen from one or more output signals from a reflectometer, aspectroscopic reflectometer, an ellipsometer, a spectroscopicellipsometer, a photo-acoustic device, and/or a grazing X-rayreflectometer. For example, an ellipsometer or a spectroscopicellipsometer may be configured to generate one or more output signalsresponsive to a thickness of metal and semi-metallic layers havingrelatively thin thicknesses and relatively thick transparent layers. Aphoto-acoustic device may be configured to generate one or more outputsignals responsive to a thickness of relatively thin metal layers, and agrazing X-ray reflectometer may be configured to generate one or moreoutput signals responsive to relatively thick and relatively thinlayers. In this manner, a system, as described herein, may be configuredto determine a thickness of layers having a broad range of thicknessesand materials.

[0326] The system may be coupled to a chemical-mechanical polishing toolaccording to any of the embodiments described herein. For example, themeasurement device may be coupled to a polishing pad of achemical-mechanical polishing tool such that the system may determine atleast two properties of a specimen disposed upon the polishing pad.Alternatively, the measurement device may be coupled to achemical-mechanical polishing tool such that the system may determine atleast two properties of a specimen being disposed upon or removed fromthe polishing pad. For example, the measurement device may be coupled toa chemical-mechanical polishing tool such that a robot wafer handler maymove below or above the measurement device. In an alternativeembodiment, the measurement device may be coupled to a robotic waferhandler of a chemical-mechanical polishing tool. In this manner, thesystem may be configured to determine at least two properties of thespecimen as the robotic wafer handler is moving the specimen.

[0327] In a further embodiment, the measurement chamber may coupled toand disposed laterally or vertically proximate an exit chamber of achemical-mechanical polishing tool. An exit chamber of achemical-mechanical polishing tool may include a water bath configuredto receive a specimen subsequent to a chemical-mechanical polishingprocess. The water bath may be used to remove chemicals, slurryparticles, and/or specimen particles remaining on the specimensubsequent to a chemical-mechanical polishing process. In this manner,the system may be configured to determine at least two properties of thespecimen as the specimen is disposed within or moving through the exitchamber.

[0328] In an additional embodiment, the measurement device may bedisposed in a measurement chamber, as described with respect to andshown in FIG. 16. The measurement chamber may be coupled to achemical-mechanical polishing tool, as shown in FIG. 17. For example,the measurement chamber may be disposed laterally or verticallyproximate one or more polishing chambers of a chemical-mechanicalpolishing tool. In addition, the measurement chamber may disposedlaterally or vertically proximate a load chamber of achemical-mechanical polishing tool. A load chamber of achemical-mechanical polishing tool may be configured to support multiplespecimen such as a cassette of wafers that are to be processed in thechemical-mechanical polishing tool. A robotic wafer handler may beconfigured to remove a specimen from the load chamber prior toprocessing and to dispose a processed specimen into the load chamber.Furthermore, the measurement chamber may be disposed in other locationsproximate a chemical-mechanical polishing tool such as anywhereproximate the chemical-mechanical polishing tool where there issufficient space for the system and anywhere a robotic wafer handler mayfit such that a specimen may be moved between a polishing pad and thesystem.

[0329] In an additional embodiment, a system may be configured todetermine at least three properties of a specimen including a criticaldimension of the specimen, a presence of defects on the specimen, and athin film characteristic of the specimen. The defects may also includesubsurface defects and/or a presence of macro defects on a backside of aspecimen, which may include, but are not limited to, coppercontamination and/or resist contamination. In addition, the thin filmcharacteristic may include a thickness of a film such as copper. Thesystem may be configured as described herein. For example, the systemmay also include a processor coupled to a measurement device andconfigured to determine at least a critical dimension, a presence ofdefects, and a thin film characteristic of the specimen from one or moreoutput signals generated by the measurement device. In addition, theprocessor may be configured to determine other properties of thespecimen from the one or more output signals. In an embodiment, themeasurement device may include a non-imaging scatterometer, ascatterometer, a spectroscopic scatterometer, a reflectometer, aspectroscopic reflectometer, an ellipsometer, a spectroscopicellipsometer, a bright field imaging device, a dark field imagingdevice, a bright field and dark field imaging device, a bright fieldnon-imaging device, a dark field non-imaging device, a bright field anddark field non-imaging device, a coherence probe microscope, aninterference microscope, an optical profilometer, a dual beamspectrophotometer, a beam profile ellipsometer, or any combinationthereof. Such a system may be coupled to a process tool such as alithography tool, an etch tool, a deposition tool, or a plating tool asdescribed herein.

[0330] In an embodiment, a system may be configured to determine atleast two properties of a specimen including a presence of macro defectson the specimen and a presence of micro defects on the specimen. Thesystem may be configured as described herein. For example, the systemmay include a processor coupled to a measurement device. The processormay be configured to determine at least a presence of macro defects anda presence of micro defects on the specimen from one or more outputsignals generated by the measurement device. In addition, the processormay be configured to determine other properties of the specimen from theone or more output signals. For example, the processor may be configuredto determine a presence of subsurface defects such as voids from one ormore output signals generated by a measurement device such an e-beamdevice, an X-ray reflectometer, or an X-ray fluorescence device. Suchvoids may be problematic, in particular for copper structures, if thevoids fill with chemicals such as plating solutions, which may corrodethe metal. In addition, the processor may be configured to determine athickness of a metal layer such as copper on the specimen from one ormore output signals generated by a measurement device such as an X-rayreflectometer and/or an X-ray fluorescence device.

[0331] Furthermore, the processor may be configured to determine apresence of macro defects on a backside of a specimen from one or moreoutput signals generated by a measurement device such as an opticalfluorescence device. The macro defects may include copper contaminationand/or resist contamination. An optical fluorescence device may beconfigured to direct a beam of light to a surface of a specimen toinduce fluorescence of the specimen. The directed beam of light may havea wavelength of approximately 364 nm. The wavelength of the directedbeam of light may vary, however, depending upon, for example, a materialthat may be a defect. The optical fluorescence device may be furtherconfigured to detect fluorescence of the specimen and to generate one ormore output signals in response to the detected fluorescence. Aprocessor may be configured to determine a presence of macro defects,for example, by comparing detected fluorescence at multiple points onthe specimen.

[0332] In an embodiment, the measurement device may include anon-imaging scatterometer, a scatterometer, a spectroscopicscatterometer, a reflectometer, a spectroscopic reflectometer, anellipsometer, a spectroscopic ellipsometer, a bright field imagingdevice, a dark field imaging device, a bright field and dark fieldimaging device, a bright field non-imaging device, a dark fieldnon-imaging device, a bright field and dark field non-imaging device, adouble dark field device, a coherence probe microscope, an interferencemicroscope, an optical profilometer, an e-beam device such as a scanningelectron microscope or a tunneling electron microscope, an X-rayreflectometer, an X-ray fluorescence device, an optical fluorescencedevice, an eddy current imaging device, and a relatively large-spote-beam device, or any combination thereof. For example, an appropriatecombination may include an eddy current imaging device and a relativelylarge-spot e-beam device. An eddy current imaging device may generateone or more output signals that may be used to as a qualitativeexcursion monitor for a presence of macro defects on a surface of thespecimen. The eddy current imaging device may be configured as describedherein. A large-spot e-beam device such as a scanning electronmicroscope may have relatively low resolution and a relatively low datarate. One or more output signals generated by such an e-beam device mayinclude a voltage contrast that may vary depending upon a presence ofdefects such as macro defects on the surface of the specimen. An exampleof an e-beam device is illustrated in U.S. Patent Application entitled“Sectored Magnetic Lens,” by John A. Notte IV, filed on Jun. 15, 2001,which is incorporated by reference as if fully set forth herein.

[0333] Such a system may be coupled to any of the process tools asdescribed herein. For example, the system may be coupled to alithography tool or an etch tool as described herein.

[0334] In an embodiment, a system may be configured to determine atleast two properties of a specimen including a presence of macro defectson at least one surface of the specimen and overlay misregistration ofthe specimen. The determined properties may also include a number, alocation, and a type of macro defects present on at least one surface ofthe specimen. At least one surface of the specimen may include a backside and/or a front side of the specimen. The system may be configuredas described herein. For example, the system may include a processorcoupled to a measurement device. The processor may be configured todetermine at least a presence of macro defects and overlaymisregistration of the specimen from one or more output signalsgenerated by the measurement device. In addition, the processor may beconfigured to determine other properties such as a critical dimension ofa feature on the specimen from the one or more output signals. In anembodiment, the measurement device may include a scatterometer, anon-imaging scatterometer, a spectroscopic scatterometer, areflectometer, a spectroscopic reflectometer, an ellipsometer, aspectroscopic ellipsometer, a beam profile ellipsometer, a bright fieldimaging device, a dark field imaging device, a bright field and darkfield imaging device, a bright field non-imaging device, a dark fieldnon-imaging device, a bright field and dark field non-imaging device, acoherence probe microscope, an interference microscope, an opticalprofilometer, or any combination thereof.

[0335] Such a system may be coupled to any of the process tools asdescribed herein. For example, the system may be coupled to a processtool such as a lithography tool, an etch tool, and a deposition tool.The system may be coupled to the process tool according to any of theembodiments as described herein. For example, the measurement device maybe coupled to a process chamber of the process tool such that the systemmay determine at least two properties of a specimen disposed within theprocess chamber. Alternatively, the measurement device may be coupled toa process chamber of the process tool such that the system may determineat least two properties of a specimen being disposed within or removedfrom the process chamber. For example, the measurement device may becoupled to the process chamber such that a robot wafer handler may movebelow or above the measurement device. In an alternative embodiment, themeasurement device may be coupled to a robotic wafer handler of theprocess tool. In this manner, the system may be configured to determineat least two properties of the specimen as the robotic wafer handler ismoving the specimen.

[0336] In an additional embodiment, the measurement device may bedisposed in a measurement chamber, as described with respect to andshown in FIG. 16. The measurement chamber may be coupled to the processtool, as shown in FIG. 17. For example, the measurement chamber may bedisposed laterally or vertically proximate one or more process chambersof the process tool. For example, the deposition tool may include acluster of process chambers that may each be configured to performsubstantially similar processes or different processes. In addition, themeasurement chamber may disposed laterally or vertically proximate aload chamber of the process tool. A load chamber of a deposition toolmay be configured to support multiple specimen such as a cassette ofwafers that are to be processed in the process tool. A robotic waferhandler may be configured to remove a specimen from the load chamberprior to processing and to dispose a processed specimen into the loadchamber. Furthermore, the measurement chamber may be disposed in otherlocations proximate a process tool such as anywhere proximate theprocess tool where there is sufficient space for the system and anywherea robotic wafer handler may fit such that a specimen may be movedbetween a process chamber and the system.

[0337] In addition, a parameter of one or more instruments coupled to aprocess tool may be altered in response to the properties determined bythe system using a feedback control technique, an in situ controltechnique, and/or a feedforward control technique. For example, apresence of macro defects on the surface such as a presence of macrodefects on a back side of a specimen determined by the system prior to,during, and/or subsequent to an etch process, a deposition process,and/or a chemical-mechanical process may be used to alter a parameter ofone or more instruments coupled to a lithography tool using afeedforward control technique. In this example, the determined presenceof macro defects on the back side of the specimen may be used to alter adose and focus condition of an exposure tool during exposure of thespecimen during a lithography process. In an additional example, overlaymisregistration of a specimen determined by the system prior to, during,and/or subsequent to an etch process and/or a deposition process may beused to alter a parameter of one or more instruments coupled to alithography tool using a feedforward control technique. In this example,the determined overlay misregistration may be used to alter a lateralalignment of a reticle in an exposure tool during exposure of thespecimen during a lithography process.

[0338] A deposition tool may be configured for chemical vapordeposition, as described below, or for physical vapor deposition.Physical vapor deposition may commonly be used in the semiconductorindustry to form a layer of a conductive material upon a specimen suchas a wafer. A physical vapor deposition tool may include a vacuumprocess chamber in which argon ions may be generated. In addition, asupport device may be disposed within the process chamber. The supportdevice may be configured to support a specimen during a physical vapordeposition process. In addition, a circular-shaped metal target may bedisposed above the support device. The physical vapor deposition toolmay also include an annular metal coil interposed between the supportdevice and the metal target. The annular metal coil may be made of thesame material as the metal target. A physical vapor deposition tool mayalso include voltage controller configured to supply a voltage to themetal target, the metal coil, and the support device. The voltagecontroller may be further configured to generate voltage biases betweenthe metal target and the support device and between the support deviceand the metal coil. The voltage biases may cause argon ions to bombardthe metal target and the metal coil to release metal atoms, which maythen sputter onto a surface of a specimen on the support device.Examples of physical vapor deposition systems and methods areillustrated in U.S. Pat. No. 5,754,297 to Nulman, U.S. Pat. No.5,935,397 to Masterson, U.S. Pat. No. 6,039,848 to Moslehi et al., U.S.Pat. No. 6,080,287 to Drewery et al., and U.S. Pat. No. 6,099,705 toChen et al., and are incorporated by reference as if fully set forthherein.

[0339] A system, as described herein, may be coupled to a physical vapordeposition tool. For example, the system may be disposed within ameasurement chamber. The measurement chamber may be configured asdescribed herein. The measurement chamber may be located proximate aprocess chamber of the physical vapor deposition tool. Alternatively,the system may be coupled to a process chamber of the physical vapordeposition tool. In this manner, the system may be integrated into aphysical vapor deposition tool. As such, the system may be configured todetermine at least two properties of a specimen prior to, during, orsubsequent to a physical vapor deposition process. Such arrangements ofa system and a process chamber are described with reference to andillustrated in, for example, FIGS. 17 and 18. Process chambers 180 and188, as illustrated in FIGS. 17 and 18, may be configured differentlythan shown such that the process chamber may be configured for aphysical vapor deposition process. For example, process chamber 180 maynot include dispense system 186 and, instead, may include variousdevices and components as described above. Furthermore, a system may becoupled to a wafer handler of a physical vapor deposition tool.Therefore, the system may be configured to determine at least twoproperties of a specimen while the specimen is being moved into aprocess chamber or out of a process chamber of a physical vapordeposition tool.

[0340] Plating may commonly be used in the semiconductor industry toform a layer of metal upon a specimen such as a wafer. A plating toolmay include a process chamber such as a plating bath. A plurality ofsupport devices may be disposed within the plating bath. Each of thesupport devices may be configured to support a specimen during a platingprocess. The plating tool may also include a cathode electrode arrangedabove and in contact with an upper surface of a specimen. In addition,the plating tool may include an anode electrode located beneath thespecimen. A plating solution may flow into the plating bath from aninlet port and may be ejected upwardly onto a surface of a specimen.Furthermore, the plating tool may include a heater configured to heatthe plating solution during a plating process. Controlling thetemperature of the plating solution may be critical to forming a metallayer without defects such as structural changes, hardening, and/orplating burn of the layer. In addition, characteristics of a metal layerformed on a specimen may vary depending on additional characteristics ofthe plating solution. For example, the characteristics of a layer ofplated metal may depend on a metal ion concentration in the platingsolution, the pH level of the plating solution, and the specific gravityof the plating solution. An example of a system and a method for platingspecimens is illustrated in U.S. Pat. No. 5,344,491 to Katou, and isincorporated by reference as if fully set forth herein.

[0341] As described herein, a system may be coupled to a plating tool.For example, the system may be disposed within a measurement chamber.The measurement chamber may be configured as described herein. Themeasurement chamber may be located proximate a process chamber of theplating tool. Alternatively, the system may be coupled to a processchamber of the plating tool. Therefore, the system may be configured todetermine at least two properties of a specimen prior to, during, orsubsequent to a plating process. Such arrangements of a system and aprocess chamber are described with reference to and illustrated in, forexample, FIGS. 17 and 18. Process chambers 180 and 188, as illustratedin FIGS. 17 and 18, may be configured differently than shown such thatthe process chamber may be configured for a physical vapor depositionprocess. For example, process chamber 180 may not include dispensesystem 186 and, instead, may include various devices and components asdescribed above. In addition, a system may be coupled to a wafer handlerof a plating tool as described herein. As such, a system may beconfigured to determine at least two properties of a specimen while aspecimen is being disposed within or removed from a process chamber of aplating tool.

[0342] An embodiment relates to a system which may be configured todetermine at least a flatness measurement of the specimen, a presence ofdefects on the specimen, and a thin film characteristic of a specimen.The defects may include subsurface defects and/or a presence of macrodefects on a backside of a specimen, which may include, but are notlimited to, copper contamination and/or resist contamination. Inaddition, the thin film characteristic may include a thickness of a filmsuch as copper. The system may be configured as described herein. Forexample, the system may include a processor coupled to a measurementdevice. The processor may be configured to determine at least a flatnessmeasurement of the specimen, a presence of defects on the specimen, anda thin film characteristic of a specimen from one or more output signalsgenerated by the measurement device. In addition, the processor may beconfigured to determine other properties of the specimen from the one ormore output signals. In an embodiment, the measurement device mayinclude a non-imaging scatterometer, a scatterometer, a spectroscopicscatterometer, a reflectometer, a spectroscopic reflectometer, anellipsometer, a spectroscopic ellipsometer, a bright field imagingdevice, a dark field imaging device, a bright field and dark fieldimaging device, a bright field non-imaging device, a dark fieldnon-imaging device, a bright field and dark field non-imaging device, adouble dark field device, a coherence probe microscope, an interferencemicroscope, an interferometer, an optical profilometer, a dual beamspectrophotometer, a beam profile ellipsometer, or any combinationthereof. In this manner, the measurement device may be configured tofunction as a single measurement device or as multiple measurementdevices.

[0343] Such a system may be coupled to a chemical-mechanical polishingtool as described above. In this manner, the system may be configured todetermine at least the three properties of a specimen prior to, during,or subsequent to a chemical-mechanical polishing process. Alternatively,such a system may be disposed within a measurement chamber, which may beconfigured as described herein. The measurement chamber may be locatedproximate the chemical-mechanical polishing tool. Therefore, such asystem may be configured to determine at least the three properties ofthe specimen prior to or subsequent to a chemical-mechanical polishingprocess. Therefore, the flatness measurement of a specimen may include ameasure of stress-induced curvature of a specimen due to achemical-mechanical polishing process. In addition, the processor may beconfigured to alter a parameter of an instrument coupled to achemical-mechanical polishing tool in response to the flatnessmeasurement using a feedforward control technique. For example, theprocessor may be configured to alter a pressure of the polishing headcoupled to the chemical-mechanical polishing tool in response to theflatness measurement using a feedforward control technique. In addition,the polishing head may be configured such that pressure across thepolishing head may vary from zone to zone. Therefore, altering apressure of the polishing head may include altering a pressure of one ormore zones of the polishing head. In this manner, a system as describedherein may be used to increase a planarity of an upper surface of thespecimen subsequent to chemical-mechanical polishing.

[0344] Alternatively, such a system may be coupled to a thermal toolsuch as a furnace or a rapid thermal annealing furnace. As such, theflatness measurement of a specimen may include a measure ofstress-induced curvature of a specimen due to thermal processing. Inaddition, such a system may also be coupled to an etch tool, alithography tool, or a wafer manufacturing tool as described herein.

[0345] In an embodiment, a system may be configured to determine atleast an overlay misregistration of a specimen and a flatnessmeasurement of the specimen. The system may be configured as describedherein. For example, the system may include a processor coupled to ameasurement device. The processor may be configured to determine atleast an overlay misregistration of a specimen and a flatnessmeasurement of the specimen from one or more output signals generated bythe measurement device. In addition, the processor may be configured todetermine other properties of the specimen from the one or more outputsignals. In an embodiment, the measurement device may include anon-imaging scatterometer, a scatterometer, a spectroscopicscatterometer, a reflectometer, a spectroscopic reflectometer, aspectroscopic ellipsometer, a bright field imaging device, a dark fieldimaging device, a bright field and dark field imaging device, acoherence probe microscope, an interference microscope, aninterferometer, an optical profilometer, a dual beam spectrophotometer,a beam profile ellipsometer, or any combination thereof. The system maybe further configured to determine at least an overlay misregistrationof a specimen and a flatness measurement of the specimen sequentially orsubstantially simultaneously. For example, the system may be coupled toa lithography tool as described herein. In addition, the system may beconfigured to determine at least a flatness measurement of the specimenprior to an exposure step of a lithography process. The system may alsobe configured to determine an overlay misregistration of a specimenprior to the exposure step.

[0346] As described herein, a system may be configured to determine atleast a characteristic of an implanted region of the specimen and apresence of defects on the specimen. The system may be configured asdescribed herein. For example, the system may include a processorconfigured to determine at least a characteristic of an implanted regionof the specimen and a presence of defects on the specimen from one ormore output signals generated by a measurement device. In addition, theprocessor may be configured to determine other properties of thespecimen from the one or more output signals. In an embodiment, themeasurement device may include a modulated optical reflectometer, anX-ray reflectance device, an eddy current device, a photo-acousticdevice, a spectroscopic ellipsometer, a non-imaging scatterometer, ascatterometer, a spectroscopic scatterometer, a reflectometer, aspectroscopic reflectometer, an ellipsometer, a bright field non-imagingdevice, a dark field non-imaging device, a bright field and dark fieldnon-imaging device, a bright field imaging device, a dark field imagingdevice, a bright field and dark field imaging device, a coherence probemicroscope, an interference microscope, an optical profilometer, a dualbeam spectrophotometer, or any combination thereof.

[0347] An ion implantation process typically involves producing a beamof ions and driving at least some of the ions into a semiconductorsubstrate. The implantation of ions into a semiconductor substrate mayalter electrical properties of the semiconductor substrate. Theelectrical properties of the implanted semiconductor substrate may varydepending on a concentration of ions implanted into the semiconductorsubstrate. The electrical properties of the implanted semiconductorsubstrate may also vary depending on the depth of the implanted portionof the semiconductor substrate and the distribution of the implantedions as a function of thickness. Such characteristics of the implantedregion of the semiconductor substrate may vary depending on a number offactors including, but not limited to, a type of the ions, implantationenergy, implantation dose, and masking materials formed on thesemiconductor substrate.

[0348] In some embodiments, an optical property of an upper, middle, orlower portion of the masking material may be used to determine acharacteristic of implanted ions in the masking material such as depthof the implanted ions or a characteristic of the implantation processsuch as implantation energy. For example, during an ion implantationprocess, ions will be driven into the masking material. The implantationof ions into the masking material may cause physical damage to an uppersurface of the masking material, and ions driven into the maskingmaterial may reside in the middle portion of the masking material. Thedepth to which implantation of ions causes damage to the upper portionof the masking material may be a function of the energy of the ions. Thedepth to which the ions are driven into the masking material may also bea function of the energy of the ions. For example, higher energyimplantation processes may cause more damage to an upper portion of themasking material and may drive the ions farther into the maskingmaterial than lower energy ion implantation process. Therefore, thedepth of the upper and middle portions of the masking material may berelated to the implant energy of the ion implantation process. The depthof the upper and middle portions of the masking material may also berelated to other process conditions of the ion implantation such as thespecies of ions being implanted or the implant dose. In addition, themeasured thickness of the lower portion of the masking material may alsovary depending upon ion implantation energy. The thickness of the upper,middle, and lower portions may be determined by measuring an opticalproperty of the masking material. The implantation of ions into themasking material or the implanted masking material resulting from theion implantation process may, therefore, be determined as a function ofthe measured optical property of the masking material.

[0349] In additional embodiments, an implanted masking material may beanalyzed as a single, substantially homogenous, layer. Therefore, anoptical property of substantially an entire implanted masking materialmay also be measured. The entire implanted masking material may includethe upper, middle, and lower portions of the implanted masking materialas described above. The individual optical properties of the upper,middle, and lower portions may, therefore, be effectively included inthe measurement of the optical property of the entire implanted maskingmaterial. For example, an optical property of the entire implantedmasking layer may include added or averaged optical properties ofindividual layers. An optical property of a masking material measured asa single layer may be used to determine the ion implantation conditions.In one example, an optical property of substantially the entirethickness of the masking material may be compared to an optical propertyof substantially the entire thickness of the masking material prior toion implantation. Therefore, the comparison of the optical propertiesmay indicate a change in the optical property of the masking materialsubsequent to the ion implantation. A change in the optical property ofthe masking material may be attributed to implanted ions present in themasking material subsequent to an implantation process. In addition, anoptical property of substantially the entire implanted masking materialmay also be compared to an optical property of substantially an entiremasking material implanted using known conditions. In this manner,comparing the optical properties of the two implanted masking materialsmay indicate if the ion implantation process is drifting over time oracross several semiconductor substrates.

[0350] In one embodiment, the optical property of the masking materialmay be a thickness, an index of refraction (or refractive index), or anextinction coefficient of the masking material or a portion of themasking material. The optical property of the masking material may bemeasured using a broadband radiation technique such as spectroscopicellipsometry or spectroscopic reflectometry. The thickness of themasking material may also be measured separately using an additionaloptical technique such as dual-beam spectrophotometry. Examples ofdual-beam spectrophotometry methods and systems are illustrated in U.S.Pat. No. 5,652,654 to Asimopoulos, U.S. Pat. No. 5,699,156 to Carver,and U.S. Pat. No. 5,959,812 to Carver, and are incorporated by referenceas if fully set forth herein. Additionally, several optical propertiesof the masking material may be measured simultaneously. For example, athickness of the upper, middle, and lower portions of the implantedmasking material may be measured simultaneously. In addition, an indexof refraction and an extinction coefficient may be measuredsimultaneously for an implanted masking material or a portion of animplanted masking material. Depending on the number of opticalproperties measured, several characteristics of the ion implantationprocess and/or the implanted masking material may also be determinedsimultaneously. Characteristics of the ion implantation process mayinclude, but are not limited to, implant dose, implant energy, andimplant species. Characteristics of the implanted masking material mayinclude, but are not limited to, concentration of the implanted ions inthe masking material and the presence of implanted ions in the maskingmaterial.

[0351] In an embodiment, the measured optical property of the implantedmasking material may also be used to determine a characteristic of animplanted portion of the semiconductor substrate. The implanted portionof the semiconductor substrate may be formed during the implantation ofions into the masking material or during subsequent ion implantationprocesses. Characteristics of an implanted portion of a semiconductorsubstrate may include a depth of the implanted portion, a concentrationof ions in the implanted portion, and a distribution of implanted ionsas a function of the thickness of the implanted portion. Suchcharacteristics may be a function of a measured optical property of themasking material. The function may describe a relationship between theoptical property of the implanted masking material and the implantationof ions into the semiconductor substrate. The function may be determinedexperimentally by implanting a masking material and a portion of asemiconductor substrate simultaneously. The optical property of theimplanted masking layer and the electrical properties of the implantedportion of the semiconductor substrate may then be measured. Theelectrical properties of the implanted portion of the semiconductorsubstrate may be related to characteristics of the implantation of ionsinto the semiconductor substrate such as depth of the implanted portionor distribution of the implanted ions as a function of thickness of thesemiconductor substrate. A number of wafers may be processed andmeasured in this manner in order to generate a set of data that may beused to determine a functional relationship between an optical propertyof an implanted masking material and a characteristic of implanted ionsin a semiconductor substrate.

[0352] Alternatively, the functional relationship may include amathematical or theoretical model that describes a relationship betweenimplantation in a masking material and implantation into a semiconductorsubstrate. For example, a mathematical or theoretical model may be usedto determine the depth of an implanted portion of a semiconductorsubstrate using implant energy, implant dose, or depth of the implantedregion of the masking material as determined from an optical property ofthe implanted masking material. An example of a method for usingspectroscopic ellipsometry and spectroscopic reflectometry to monitorion implantation is illustrated in U.S. patent application Ser. No.09/570,135, “Method of Monitoring Ion Implants by Examination of anOverlying Masking Material” to Strocchia-Rivera, filed on May 12, 2000,and is incorporated by reference as if fully set forth herein.

[0353] Optical evaluation of an ion implantation process may provideseveral advantages over current methods to evaluate an ion implantationprocess. For example, an optical method may provide non-destructivetesting and may not interfere with processing of a semiconductorsubstrate or the performance of a fabricated semiconductor device.Furthermore, optical evaluation of the masking material may not requireadditional processing such as annealing of the semiconductor substrateon which the masking material is formed. Therefore, evaluation of an ionimplantation process using an optical method such as a broadbandradiation technique may be performed during the ion implantationprocess.

[0354] In an embodiment, a system configured to evaluate an ionimplantation process as described herein may coupled to an ionimplanter. The system may include a measurement device as describedherein. The measurement device may be coupled to a process chamber ofthe ion implanter as shown, for example, in FIG. 17. The measurementdevice may be coupled to the ion implanter such that the measurementdevice may be external to the ion implanter. In this manner, exposure ofthe components of the measurement device to chemical and physicalconditions within the ion implanter may be reduced, and even eliminated.Furthermore, the device may be externally coupled to the ion implantersuch that the measurement device does not interfere with the operation,performance, or control of the ion implantation process.

[0355] The measurement device, however, may be configured to focus anincident beam of broadband radiation onto a specimen in the ionimplanter. The measurement device may also be configured to detect atleast a portion of a beam of broadband radiation returned from thespecimen. For example, a process chamber of an ion implanter may includesmall sections of a substantially optically transparent materialdisposed within walls of the process chamber. The small sections oftransparent material may be configured to transmit the incident andreturned beams of broadband radiation from an illumination systemoutside the process chamber to a specimen within the process chamber andfrom the specimen to a detection system outside the process chamber. Theoptically transparent material may be further configured to transmitincident and returned beams of light without undesirably altering theoptical properties of the incident and reflected beams. An appropriatemethod for coupling a measurement device to an ion implanter may vary,however, depending upon, for example, a configuration of the ionimplanter. For example, placement and dimensions of the transparentmaterial sections disposed within the walls of the process chamber maydepend on the configuration of the components within the processchamber. Therefore, a measurement device coupled to an ion implanter maybe configured to measure optical properties of the masking material,optical properties of a portion of the masking material, opticalproperties of a multi-layer masking stack, or optical properties of thespecimen during the implantation process.

[0356] In an additional embodiment, the system may also include aprocessor coupled to the measurement device and the ion implanter. Theprocessor may be configured to interface with the measurement device andthe ion implanter. For example, the processor may receive signals and/ordata from the ion implanter representative of parameters of aninstrument coupled to the ion implanter. The processor may also beconfigured to receive signals and/or data from the measurement devicerepresentative of light returned from the specimen or at least oneproperty of the implanted region of a specimen. Additionally, theprocessor may be further configured to control the measurement deviceand the ion implanter. For example, the processor may alter acharacteristic of the implanted region of the specimen by altering aparameter of an instrument coupled to the ion implanter. Therefore, thesystem may monitor and control the implantation of ions during aprocess.

[0357] In an additional embodiment, the system may be configured tomonitor or measure variations in at least one optical property of theimplanted masking material. For example, the measurement device may beconfigured to measure an optical property of the implanted maskingmaterial substantially continuously or at predetermined time intervalsduring an ion implantation process. The processor may, therefore,receive one or more output signals from the measurement device that maybe representation of light returned from the specimen. The processor mayalso monitor variations in the one or more output signals over theduration of the ion implantation process. By analyzing variations in theone or more output signals during implantation, the processor may alsogenerate a signature representative of the implantation of the ions intothe masking material. The signature may include at least one singularitythat may be characteristic of an endpoint of the ion implantationprocess. An appropriate endpoint for an ion implantation process may bea predetermined concentration of ions in a masking material or in aspecimen. In addition, the predetermined concentration of ions may varydepending upon the semiconductor device feature being fabricated by theion implantation process. After the processor has detected thesingularity of the signature, the processor may stop the implantation ofions by altering a level of a parameter of an instrument coupled to theion implanter.

[0358] In an embodiment, a method for fabricating a semiconductor devicemay include implanting ions into a masking material and a semiconductorsubstrate. The masking material may be arranged on the semiconductorsubstrate such that predetermined regions of the semiconductor substratemay be implanted with ions. For example, portions of the maskingmaterial may be removed by a lithography process and/or etch process toexpose regions of the semiconductor substrate to an implantationprocess. During an ion implantation process, typically, an entirescanned may be scanned with a beam of dopant ions. Therefore, theremaining portions of masking material may inhibit the passage of dopantions into underlying regions of the semiconductor substrate during anion implantation process. As such, patterning the masking material mayprovide selective implantation of ions into exposed regions of thespecimen.

[0359] The exposed regions may be regions of a specimen in whichfeatures of a semiconductor device are to be formed. For example, adielectric material overlying a channel region of a gate during an ionimplantation process may prevent implantation of ions into the gateconductor or the channel region beneath the gate conductor. The exposedregions of the specimen may, therefore, correspond to a particularfeature of the semiconductor device being fabricated such as a junctionregion. Alternatively, ions may be implanted through a masking materialand into underlying regions of the semiconductor substrate. In thismanner, the masking material may include a thin gate dielectric materialarranged over junction regions of a transistor. Implantation of ionsthrough a masking material may enhance the electrical properties of theimplanted region of the semiconductor substrate, for example, byrandomizing the directional paths of the ions which are being driveninto the specimen. The masking material may also be formed over asubstantially planar specimen or over a non-planar specimen.

[0360] Fabricating a semiconductor device may also include monitoringimplantation of ions into the semiconductor substrate by measuring atleast one optical property of the masking material during the ionimplantation process. The optical property of the masking material maybe altered by the implantation of ions into the masking material. Assuch, the method for fabricating a semiconductor device may also includedetermining at least one characteristic of the implanted ions in thesemiconductor substrate. The characteristic may be determined, forexample, using a function that describes a relationship between theoptical property of the implanted masking material and the implantationof ions into the semiconductor substrate.

[0361] In an embodiment, any material that may be substantiallytransparent to at least a portion of the light produced by a measurementdevice, as described above, may be used as a masking material forevaluation of an ion implantation process involving measurement ofoptical properties of a masking material. In one embodiment, the maskingmaterial may be a resist. An appropriate resist may include photoresistmaterials that may be patterned by an optical lithography technique.Other resists, however, may also be used such as e-beam resists or X-rayresists, which may be patterned by an e-beam or an X-ray lithographytechnique, respectively. In another embodiment, the masking material mayinclude an inorganic material. Inorganic masking materials that may beused to inhibit ion implantation include, but are not limited to,silicon dioxide, silicon nitride, titanium nitride, polycrystallinesilicon, cobalt silicide, and titanium silicide. The inorganic maskingmaterial may be formed by deposition techniques, such as chemical vapordeposition, or thermal growth techniques. The inorganic maskingmaterials may be patterned using an etch technique.

[0362] In another embodiment, the masking material may include two ormore layers of different masking materials arranged in a stack. Forexample, the masking material may include a resist formed upon aninorganic material. The inorganic material may be include any materialthat inhibits the implantation of ions through the masking material.When used as part of a masking material, the inorganic material may notbe transparent or may not exhibit any substantial changes in opticalproperties when exposed to ions. The subsequent optical analysis may bedone on the overlying resist material rather than on the underlyinginorganic masking material. The inorganic material may be formed on aspecimen prior to coating the specimen with a resist. This additionalinorganic material, in combination with an overlying resist, may serveas the masking stack. An appropriate masking material may vary dependingon, for example, an ion implantation process or an ion implanterconfiguration.

[0363] During ion implantation processes, and especially in processesusing relatively high dosage levels, a semiconductor substrate may besignificantly damaged due to the implantation of dopant ions intoregions of the semiconductor substrate. For example, an implanted regionof such a damaged semiconductor substrate may include of an uppercrystalline damaged layer and an intermediate layer of amorphoussilicon. The damage in the upper crystalline layer may be caused, forexample, by electronic collisions between atoms of the semiconductorsubstrate and the implanted ions. Displacement damage, however, may notbe produced if ions entering the semiconductor substrate do not haveenough energy per nuclear collision to displace silicon atoms from theirlattice sites. Increasing the dose of ions, and in particular relativelyheavy ions, may produce an amorphous region in which the displaced atomsper unit volume may approach the atomic density of the semiconductorsubstrate. As the implant dose of the ion implantation processincreases, the thickness of the amorphous layer may also increase. Thepresence of an amorphous layer of silicon may act as a boundary that mayreflect optical radiation. Reflection of light by the amorphous layermay also effect the reflectance and ellipsometric measurements.Therefore, measurement of an optical property of the amorphous siliconlayer may also be used to monitor the processing conditions of an ionimplantation process.

[0364] In an embodiment, an optical property of an implanted portion ofa semiconductor substrate may be measured. The optical property may be athickness, an index of refraction, or an extinction coefficient of theimplanted portion. In addition, several optical properties of theimplanted portion of the semiconductor substrate may be measuredsubstantially simultaneously. The optical property of the implantedportion of the semiconductor substrate and the optical property of theimplanted masking material may also be measured substantiallysimultaneously. A characteristic of the implanted ions in thesemiconductor substrate may be determined from the measured opticalproperty of the implanted portion of the semiconductor substrate. Thischaracteristic may, therefore, be related to the implantation of ionsinto a portion of the semiconductor substrate or a characteristic of theresulting implanted semiconductor substrate. For example, thecharacteristic may be an implant energy, an implant dose, or an implantspecies of the ion implantation process. In addition, the characteristicmay be a concentration of ions, a depth, a distribution of the implantedions as a function of thickness, or a presence of the implanted ions inthe implanted portion of the semiconductor substrate. In addition,optical properties of the implanted portion of the semiconductorsubstrate may be used to determine several characteristics substantiallysimultaneously, which may include, but are not limited to, any of thecharacteristics as described above. A characteristic of thesemiconductor substrate and a characteristic of the implanted ions inthe masking material may also be determined substantiallysimultaneously.

[0365] In an additional embodiment, optical properties of the implantedportion of the semiconductor substrate may be measured using a broadbandwavelength technique as described herein. For example, a measurementdevice, as described herein, may be configured to use a broadbandwavelength technique to measure optical properties of an implantedportion of a semiconductor substrate. Additionally, the measurementdevice may be coupled to an ion implanter as described above such thatmeasuring an optical property of the implanted portion of thesemiconductor substrate may be performed during an ion implantationprocess. Therefore, variations in an optical property of the implantedportion of the semiconductor substrate may also be measured during anion implantation process. In this manner, a signature characterizing theimplantation of ions into the semiconductor substrate may be obtained.This signature may include a singularity characteristic of an end of theimplantation process. As described above, an appropriate endpoint maybe, for example, a predetermined concentration of ions in thesemiconductor substrate. An appropriate processor, as described herein,may then reduce or substantially stop processing of the semiconductorsubstrate by controlling the ion implanter.

[0366] In an embodiment, the measured optical properties of theimplanted masking material may be used to determine processingconditions for subsequent ion implantation processes of additionalspecimens such as additional semiconductor substrates or semiconductordevice product wafers. For example, the implant energy of theimplantation of ions into the masking material may be determined usingthe measured optical property of the implanted masking material. Thedetermined implant energy may be used to determine depth of an implantedportion of a semiconductor substrate during an ion implantation process.The depth of the implanted portion of the semiconductor substrate mayalso be determined from a measured optical properties of the implantedportion of the semiconductor substrate.

[0367] The determined depth of the implanted portion of thesemiconductor substrate may be less than a predetermined depth. Thepredetermined depth may vary depending on, for example, a featurefabricated during the ion implantation process. Therefore, beforeprocessing additional semiconductor substrates, or product wafers, theimplant energy or another process condition of the ion implantationprocess may be altered such that a depth of an implanted portion of theadditional semiconductor substrates may be approximately equal to thepredetermined depth. For example, an implant energy of the ionimplantation process may be increased to drive the ions deeper into thesemiconductor substrate. In this manner, measured optical properties ofa masking material may be used to determine and alter process conditionsof an ion implantation process using a feedback control technique. In anadditional embodiment, measured optical properties of an implantedportion of a semiconductor substrate may be used to determine and alterprocess conditions of an ion implantation process using a feedbackcontrol technique.

[0368] In an additional embodiment, measured optical properties of animplanted masking material may be used to determine process conditionsof additional semiconductor fabrication processes that may be performedsubsequent to an ion implantation process. Additional semiconductorfabrication processes may include, but are not limited to, a process toanneal the implanted regions of a semiconductor substrate and a processto remove the masking material. For example, an implant energy of an ionimplantation process may be determined using a measured optical propertyof an implanted masking material. The determined implant energy may beused to determine a depth that ions may be implanted into asemiconductor substrate using the ion implantation process.Alternatively, a depth of the implanted portion of a semiconductorsubstrate may also be determined using a measured optical property ofthe implanted semiconductor substrate.

[0369] The determined depth of the implanted portion of thesemiconductor substrate may be greater than a predetermined depth.Process conditions of an annealing process performed subsequent to theion implantation process, however, may be optimized for thepredetermined. Therefore, before annealing an implanted semiconductorsubstrates having the determined depth, a process condition of theannealing process such as anneal time or anneal temperature may bealtered. In this example, the anneal time of the annealing process maybe increased to ensure substantially complete recrystallization of theamorphous layer formed in the semiconductor substrate by the ionimplantation process. In this manner, measured optical properties of amasking material may be used to determine process conditions of asemiconductor fabrication process performed subsequent to an ionimplantation process using a feedforward control technique. Measuredoptical properties of an implanted portion of a semiconductor substratemay also be used to determine process conditions of a semiconductorfabrication process performed subsequent to an ion implantation processusing a feedforward control technique.

[0370] A set of data that may include measured optical properties of amasking material may be collected and analyzed. The set of data may beused to determine processing conditions of an ion implantation processor to monitor the processing conditions over time. Process controlmethods as described herein may also be used in conjunction withelectrical testing of an implanted region of a semiconductor substrate.The combination of optical and electrical analysis may provide a largeramount of characterization data for an ion implantation process. Thecharacterization data may be used to assess the mechanisms of ionimplantation, to determine the cause of defects, and to alter processconditions. In addition, this process control strategy may be used toqualify, or characterize the performance of, a new ion implanter.Furthermore, this process control strategy may be used to determine anappropriate masking material and masking material thickness indevelopment of an ion implantation process. The process control methodmay also be used to compare the performance of two or more ionimplanters. Such a process control method may be used in a manufacturingfacility in which several ion implanters may be used in parallel tomanufacture one type of device or product.

[0371] In an embodiment, a system may be configured to determine atleast an adhesion characteristic of a specimen and a thickness of thespecimen. The system may be configured as described herein. For example,the system may also include a processor coupled to a measurement device.In addition, the processor may be configured to determine otherproperties of the specimen from the detected light. In an embodiment,the measurement device may include a photo-acoustic device, aspectroscopic ellipsometer, an ellipsometer, an X-ray reflectometer, agrazing X-ray reflectometer, an X-ray diffractometer, a non-imagingscatterometer, a scatterometer, a spectroscopic scatterometer, areflectometer, a spectroscopic reflectometer, a bright field imagingdevice, a dark field imaging device, a bright field and dark fieldimaging device, a coherence probe microscope, an interferencemicroscope, an optical profilometer, an eddy current device, an acousticpulse device, or any combination thereof. The processor may beconfigured to determine at least an adhesion characteristic and athickness of the specimen from one or more output signals from themeasurement device.

[0372] In an embodiment, an acoustic pulse device or a photo-acousticdevice may be configured to use acoustic pulses to characterize a layerformed upon a specimen. For example, acoustic pulses may be used todetermine a thickness of a layer such as a metal disposed on a specimen.An advantage of an acoustic pulse device is that measuring a property ofa layer formed on a specimen with the device is substantiallynon-destructive. An acoustic pulse device may be configured to apply alaser pulse to a specimen. The laser pulse may be absorbed within oneabsorption length from an upper surface of the layer thereby causing arise in local surface temperature. Depending on temperature coefficientof expansion (expansivity) of a layer, the layer may undergo thermalstresses, which may generate an elastic pulse in the layer. The elasticpulse may propagate across the layer at approximately the velocity ofsound. The time of flight for the elastic pulse across the layer may bemeasured and may be used to determine a thickness of the layer.Measuring the time of flight for the elastic pulse may include steps ofthe methods described below.

[0373] In one embodiment, a laser pulse of radiation may be applied to afirst surface area of a specimen to non-destructively generate anelastic pulse in the specimen. The elastic pulse may cause the firstsurface area to move. The acoustic pulse device may include aninterferometer configured to detect an acoustic echo of the pulsetraversing the specimen. The interferometer may also be configured toprovide a pair pulses including a probe pulse and a reference pulse ofradiation. The interferometer may be further configured to direct theprobe pulse to the first surface area when it is moved by the elasticpulse and a reference pulse to a second surface area. The second surfacearea may be laterally spaced from the first surface area. Theinterferometer may also be configured to monitor the reflection of thepulses off of the surface of the specimen. The reflection of the pair ofpulses may be used to determine a thickness of a layer on the specimen.For example, a processor of the system may be configured to determine athickness of the layer using one or more output signals from theinterferometer.

[0374] In an embodiment, a method for non-destructively measuringproperties of a specimen may include directing a pump pulse of radiationto a first surface area of the specimen to non-destructively generate anelastic pulse in the specimen. The generated elastic pulse may cause thefirst surface area to move. The method may also include directing aprobe pulse and a reference pulse of radiation to the specimen using aninterferometer. Directing the probe and reference pulses may includedirecting the probe pulse to the first surface area when it is moved bythe elastic pulse and directing the reference pulse to a second surfacearea. The second surface area may be laterally spaced from the firstsurface area. In addition, the method may include monitoring reflectionsof the probe and reference pulses. The method may also include determinea thickness of a layer on the specimen. Both of the above describedacoustic-pulse methods are described in further detail in U.S. Pat. No.6,108,087 to Nikoonahad et al. and U.S. patent application Ser. No.09/310,017, both of which are incorporated by reference as if fully setforth herein. Other methods for measuring films using acoustic waves arealso described in U.S. Pat. No. 6,108,087.

[0375] In another embodiment, an acoustic pulse device may be configuredto determine a thickness of a layer by using a probe pulse and areference pulse that are substantially in phase with each other. Thein-phase pulses may be used to measure an acoustic echo created by apump pulse applied to an area of the layer. The applied pump pulse maycreate an elastic pulse that may propagate through the layer. The probepulse may be directed to the area of the specimen through which theelastic pulse propagates. The reference pulse may be directed tosubstantially the same surface area or a different surface area of thesample such that the pair of pulses may be modified by the specimen. Themodified pulses may interfere at a detector. For example, at least oneof the pulses may be modulated in phase or frequency before or aftermodification by the sample and prior to detection by the detector. Byprocessing one or more output signals from the detector, a thickness ofa layer on the specimen may be determined.

[0376] In one embodiment, an optical delay may be used to alter a timerelationship between the pump pulse and the probe pulse. In this manner,the probe pulse may be directed to the specimen surface when it isinfluenced by the elastic pulse created by the pump pulse. The referenceand probe pulses may be directed along substantially the same opticalpath between an optical source and a detector. Such a configuration mayreduce, and even minimize, random noise in one or more output signals ofthe detector, which may be caused, for example, by environmentalfactors. Such a configuration is further described in U.S. patentapplication Ser. No. 09/375,664, which is incorporated by reference asif fully set forth herein.

[0377] Acoustic pulse devices, as described above, may be incorporatedinto any of the systems and/or process tools as described herein.

[0378] In an embodiment, a system may be configured to determine atleast a concentration of an element in a specimen and a thickness of alayer on the specimen. The system may be configured as described herein.For example, the system may also include a processor coupled to ameasurement device. The processor may be configured to determine atleast a concentration of an element in a specimen and a thickness of alayer formed on the specimen from one or more output signals generatedby the measurement device. In addition, the processor may be configuredto determine other properties of the specimen from the detected light.In an embodiment, the measurement device may include a photo-acousticdevice, an X-ray reflectometer, a grazing X-ray reflectometer, an X-raydiffractometer, an eddy current device, a spectroscopic ellipsometer, anellipsometer, a non-imaging scatterometer, a scatterometer, aspectroscopic scatterometer, a reflectometer, a spectroscopicreflectometer, a bright field imaging device, a dark field imagingdevice, a bright field and dark field imaging device, a coherence probemicroscope, an interference microscope, an optical profilometer, an eddycurrent device, or any combination thereof.

[0379] An X-ray reflectance (“XRR”) technique may be used to measure aproperty of a specimen such as a concentration of an element in athickness of a layer or at an interface between layers on a specimen.X-ray reflectance may also be used to determine a thickness of a layeror an interface between layers on a specimen. Layers which may bemeasured by X-ray reflectance may include layers substantiallytransparent to light such as dielectric materials and layerssubstantially opaque to light such as metals. X-ray reflectance mayinclude irradiating a surface of a specimen with X-rays and detectingX-rays reflected from the surface of the specimen. A thickness of alayer may be determined based on interference of X-rays reflected fromthe surface of the specimen. In addition, reflection of X-rays from thesurface of the specimen may vary depending on refractive index changesat a surface of a layer on the specimen and at an interface betweenlayers on the specimen and the density of the layer or of the interface.Therefore, a complex refractive index in an X-ray regime may be directlyproportional to a density of a layer. In this manner, a concentration ofan element in a layer or at an interface between layers may bedetermined based on the density and thickness of the layer.

[0380] X-ray reflectance may be performed at different angles ofincidence depending upon, for example, characteristics of a specimen. AnX-ray reflectance curve may be generated by a processor using one ormore output signals responsive to the detected X-rays reflected from thesurface of the specimen. The X-ray reflectance curve may include anaverage reflectance component, which may be caused by bulk properties ofthe specimen. The average reflectance component may be subtracted fromthe one or more output signals such that an interference oscillationcomponent curve may be generated. Parameters of the interferenceoscillation component curve may be converted, and a Fourier transformmay be performed. A thickness of a layer may be determined by a positionof a peak of a Fourier coefficient, F(d). In addition, a peak intensityof the Fourier coefficient, F(d), may be used to determine a layerdensity or an interface density. For example, a relationship between apeak intensity of a Fourier coefficient and a layer density may besimulated and may be used to determine a layer density. Alternatively, alayer density may be determined based on the X-ray reflectance curve byfitting the curve to model data using a mathematical method such as anonlinear least squares curve-fitting method. In such a method, severalof the fitted parameters may be inter-related. Therefore, parametersthat may be substantially constant across specimens may be fixed ataverage values in order to prevent multiple solutions.

[0381] A concentration of an element on a surface of a layer or at aninterface between layers may be determined by using data that maydescribe a relationship between interface layer density andconcentration. The data may be generated by another analytical techniquesuch as secondary ion mass spectroscopy (“SIMS”). SIMS may involveremoving material from a sample by sputtering ions from the surface ofthe sample and analyzing the sputtered ions by mass spectrometry.Examples of SIMS techniques are illustrated in U.S. Pat. No. 4,645,929Criegern et al., U.S. Pat. No. 4,912,326 to Naito, U.S. Pat. No.6,078,0445 to Maul et al., and U.S. Pat. No. 6,107,629 to Benninghovenet al., and are incorporated by reference as if fully set forth herein.In this manner, a plurality of samples having various elementalconcentrations may be prepared. The samples may be analyzed by XRR todetermine density of the layer or interface of interest and may also beanalyzed by SIMS to determine a concentration of the layer or interfaceof interest. A relationship between density and concentration may thenbe determined. The determined relationship may be used to determineconcentration of an element on a surface of a layer or at an interfacebetween layers in additional specimen.

[0382] A device configured to measure X-ray reflectance of a layer or aninterface between layers of a specimen may include a measurementchamber. A specimen may be supported within the measurement chamber by astage or another mechanical device. An appropriate stage or mechanicaldevice may be configured to maintain a position of the specimen duringmeasurement and for moving the specimen before, during, and/or afterX-ray reflectance measurements. The stage or mechanical device may alsobe further configured as described herein. The measurement chamber mayalso be configured as a process chamber of a process tool, which may beused for semiconductor fabrication. For example, the process chamber mayinclude a deposition chamber in which a metal film may be formed on aspecimen or an ion implantation chamber in which ions may be driven intoa specimen. In this manner, X-ray reflectance measurements may beperformed prior to, during, or subsequent to a process performed in theprocess chamber. The measurement chamber may also be disposed within orproximate a process tool such that a specimen may be moved from aprocess chamber of the process tool to the measurement chamber. In oneexample, the measurement chamber may be coupled to a chemical-mechanicalpolishing tool such that X-ray reflectance measurements may be performedprior to or subsequent to a process step of a chemical-mechanicalpolishing process.

[0383] The device configured to measure X-ray reflectance of a layer oran interface between layers of a specimen may also include an X-raysource such as a rotor X-ray source. X-rays generated by the X-raysource may be passed through a germanium monochromator. The measurementchamber may also include a beryllium window in a wall of the measurementchamber through which the X-rays may enter the measurement chamber. Inthis manner, X-rays may be directed to a surface of a specimen supportedwithin the measurement chamber. In addition, the device may include anX-ray detector arranged on a side of the measurement chamber opposite tothe X-ray source. As such, X-rays reflected from the surface of thespecimen may be detected. The system may also include a controllercomputer configured to control the device and/or individual componentsof the device. The controller computer may also be configured to processa signal generated by the detector in response to the detected X-raysand to determine a concentration of an element in a layer or aninterface between layers of a specimen. The controller computer may befurther configured as a processor as described herein. Additionalexamples of X-ray reflectance methods and systems are illustrated inU.S. Pat. No. 5,740,226 to Komiya et al. and U.S. Pat. No. 6,040,198 toKomiya et al., which are incorporated by reference as if fully set forthherein.

[0384] In an embodiment, an eddy current device may be configured tomeasure a thickness of a layer formed upon a specimen. Eddy currentdevices may also be configured to measure junction leakage in aspecimen. An eddy current device may include a sensor configured toapply an alternating current to a specimen. The applied alternatingcurrent may cause an eddy current in the specimen. The resistance orconductance of the specimen may be analyzed using the eddy current. Athickness of a layer on the specimen may be determined by a change inresistance or conductivity. Methods for using eddy currents to determinea thickness of a layer on a specimen are illustrated in U.S. Pat. No.6,086,737 to Harada, and U.S. Patent Application entitled “In-SituMetallization Monitoring Using Eddy Current Measurements, by K. Kehman,S. M. Lee, W. Johnson, and J. Fielden, which are incorporated byreference as if fully set forth herein.

[0385] A sensor or an eddy current device may include a capacitor and aninductor. During use, the sensor may be positioned proximate to thespecimen. When a layer formed on the specimen is conductive or magnetic,the inductor may be configured to couple an alternating (“ac”)electromagnetic field to the layer. The alternating electromagneticfield may induce eddy (i.e., Foucault) currents in the layer, and twoeffects may be present. First, the layer may act as a lossy resistor,and the effect will be a resistive loading on a sensor circuit, whichwill lower the amplitude of the resonant signal and lower the resonantfrequency. Second, a decrease in the layer thickness may produce aneffect as though a metal rod were being withdrawn from the coil of theinductor thereby causing a change in inductance as well as a frequencyshift. As the thickness of the layer changes, either by addition orremoval, the eddy currents may change, and thus their resistive loadingeffect and magnitude of frequency shift may change as well. When a layeris not present, there will be no effect on the sensor circuit (i.e., noresistive loading, no inductance change, no frequency shift). Thus, achange in thickness of a layer may be monitored substantiallycontinuously or intermittently by monitoring changes in any of theseparameters.

[0386] Note that any conductive film may be monitored using an eddycurrent device, not just a layer such as a thin film on a semiconductorsubstrate. For example, in an electroplating process, metal ions in aplating solution dissolved from a metal block electrode acting as ananode may be deposited on a target at the cathode to form a film. Eddycurrent measurements may be used to monitor formation of the film on thetarget during the electroplating process, both in-situ and real time.

[0387] Eddy current devices and measurements may be used in a variety ofapplications. In one embodiment, an eddy current device may be coupledto a chemical mechanical polishing tool. In this application, the eddycurrent device may be used to determine one or more endpoints of thepolishing process and/or a thickness of one or more polished layersprior to, during, or subsequent to the polishing process. In anotherembodiment, an eddy current device may be coupled to a deposition tool.In this case, the eddy current device may be utilized to detect athickness of a deposited layer, either after the layer is deposited orwhile the layer is being deposited. The eddy current device may also beused to determine one or more endpoints of the deposition process.

[0388] In another method, monitoring eddy current characteristics andsurface photovoltage may be used in combination to determine a junctionleakage in a specimen. Generally, a specimen such as a semiconductorsubstrate may include a first type junction and a second type junction.Junction leakage may be monitored by applying varying light to thesemiconductor substrate, measuring a surface photovoltage created on thesurface of the semiconductor substrate, and measuring the eddy currentcharacteristic for the semiconductor substrate in response to the light.A junction leakage characteristic of at least one of the junction typesmay be determined from the combination of surface photovoltage and theeddy current characteristics. The use of eddy current monitoring tomeasure junction leakage is described in further detail in U.S. Pat. No.6,072,320 to Verkuil, which is incorporated herein by reference.

[0389] Eddy current measurement devices may be included in any of thesystems, as described herein. For example, a system may include an eddycurrent measurement device coupled to a measurement device configured asa spectroscopic ellipsometer. In this manner, a processor of the systemmay be configured to determine at least two characteristics of aspecimen, which may include a thickness of a layer on a specimen and acritical dimension of a feature on the specimen. The layer may include abarrier layer, and the feature may include a “seat.”

[0390] A system including an eddy current measurement device and aspectroscopic ellipsometer may be coupled to a process tool such as anatomic layer deposition (“ALD”) tool. ALD may be used to form a barrierlayer and/or a seat. ALD may typically be a technique for depositingthin films that may involve separating individual reactants and takingadvantage of the phenomenon of surface adsorption. For example, when aspecimen is exposed to a gas, the specimen may be coated with a layer ofthe gas. Upon removing the gas, for example, by pumping the gas out ofthe process chamber with a vacuum pump, under certain circumstances amonolayer of the gas may remain on a surface of the specimen. Atrelatively moderate temperatures (i.e., room temperature), the monolayermay held relatively weakly on the surface of the specimen by physicaladsorption forces. At higher temperatures, a surface chemical reactionmay occur, and the gas may be held relatively strongly on the surface ofthe specimen by chemisorption forces. A second reactant may beintroduced to the process chamber such that the second reactant mayreact with the adsorbed monolayer to form a layer of solid film. In thismanner, relatively thin solid films such as barrier layers may be grownone monolayer at a time. In addition, such thin solid films may beamorphous, polycrystalline, or epitaxial depending on, for example, thespecific process.

[0391]FIG. 23 illustrates an embodiment of a system configured toevaluate a deposition process. In an embodiment, a system may includemeasurement device 238 coupled to deposition tool 240. Measurementdevice 238 may be coupled to deposition tool 240 such that themeasurement device may be external to a process chamber of thedeposition tool. As such, exposure of the measurement device to chemicaland physical conditions within the process chamber may be reduced, andeven eliminated. Furthermore, the measurement device may be externallycoupled to the process chamber such that the measurement device may notalter operation, performance, or control of the deposition process. Forexample, a process chamber may include relatively small sections of asubstantially optically transparent material 242 disposed within wallsof the process chamber. The configuration of a deposition tool, however,may determine an appropriate method to couple the measurement device tothe deposition tool. For example, placement and dimensions ofsubstantially optically transparent material sections 242 disposedwithin the walls of the process chamber may vary depending on, forexample, the arrangement of the components within the process chamber.In addition, measurement device 238 may be coupled external to theprocess chamber such that the measurement device may direct energy to asurface of the specimen and may detect energy returned from a surface ofthe specimen as a specimen is being placed within and/or being removedfrom the process chamber. A surface of the specimen may include a frontside of the specimen or a back side of the specimen.

[0392] The deposition tool may be a chemical vapor deposition tool or aphysical vapor deposition tool configured to deposit dielectricmaterials or conductive materials. Examples of deposition tools areillustrated in U.S. Pat. No. 4,232,063 to Rosler et al., U.S. Pat. No.5,695,568 to Sinha et al., U.S. Pat. No. 5,882,165 to Maydan et al.,U.S. Pat. No. 5,935,338 to Lei et al., U.S. Pat. No. 5,963,783 to Lowellet al., U.S. Pat. No. 6,103,014 to Lei et al., U.S. Pat. No. 6,112,697to Sharan et al., and U.S. Pat. No. 6,114,216 to Yieh et al., and PCTApplication Nos. WO 99/39183 to Gupta et al., WO 00/07226 to Redinbo etal., and are incorporated by reference as if fully set forth herein.

[0393] In an alternative embodiment, measurement device 238 may bedisposed in a measurement chamber, as described with respect to andshown in FIG. 16. The measurement chamber may be coupled to depositiontool 240, as shown in FIG. 17. For example, the measurement chamber maybe disposed laterally or vertically proximate one or more processchambers of deposition tool 240. For example, the deposition tool mayinclude a cluster of process chambers that may each be configured toperform substantially similar processes or different processes. Inaddition, the measurement chamber may disposed laterally or verticallyproximate a load chamber of deposition tool 240. A load chamber of adeposition tool may be configured to support multiple specimen such as acassette of wafers that are to be processed in the deposition tool. Arobotic wafer handler may be configured to remove a specimen from theload chamber prior to processing and to dispose a processed specimeninto the load chamber. Furthermore, the measurement chamber may bedisposed in other locations proximate a deposition tool such as anywhereproximate the deposition tool where there is sufficient space for thesystem and anywhere a robotic wafer handler may fit such that a specimenmay be moved between a process chamber and the system.

[0394] In this manner, a robotic wafer handler of deposition tool 240,stage 264, or another suitable mechanical device may be configured tomove specimen 246 to and from the measurement chamber and processchambers of the deposition tool. In addition, the robotic wafer handler,the stage, or another suitable mechanical device may be configured tomove specimen 246 between process chambers of the deposition tool andthe measurement chamber. Measurement device 238 may be further coupledto deposition tool 240 as further described with respect to FIG. 17.

[0395] Measurement device 238 may include first illumination system 244configured to direct light having a known polarization state to specimen246 such that a region of the specimen may be illuminated prior to,during, or subsequent to a deposition process. A portion 249 of thelight directed to specimen 246 by first illumination system 244 maypropagate from the illuminated region of the specimen. In addition, themeasurement device may include detection system 248 configured toanalyze a polarization state of light 249 propagating from the surfaceof specimen 246 prior to, during, or subsequent to a deposition process.In this manner, the measurement device may be configured to operate as aspectroscopic ellipsometer.

[0396] In addition, measurement device 238 may include secondillumination system 250 configured to direct light having a knownpolarization state to specimen 246 such that a region of the specimenmay be illuminated during a deposition process. A portion 251 of thelight directed to specimen 246 by second illumination system 250 maypropagate from the illuminated region of the specimen along a path ofthe directed light. In addition, the measurement device may includedetection system 252 configured to measure an intensity of the lightpropagating from the surface of specimen 246 prior to, during, orsubsequent to a deposition process. In this manner, the measurementdevice may also be configured to operate as a spectroscopicreflectometer. The measurement device, however, may also be configuredto operate as a beam profile ellipsometer and a null ellipsometer.

[0397] The relatively small sections of substantially opticallytransparent material 242 may be configured to transmit light from lightsource 254 of first illumination system 244 outside the process chamberto a surface of specimen 246 within the process chamber and to transmitlight propagating from the surface of the specimen to detector 256outside the process chamber. In addition, relatively small sections ofsubstantially optically transparent material 242 may be configured totransmit light from light source 258 of second illumination system 250outside the process chamber to a surface of specimen 246 within theprocess chamber and to transmit light propagating from the surface ofthe specimen to detectors 260 and 262 outside the process chamber. Thesubstantially optically transparent material may have optical ormaterial properties such that the light from light sources 254 and 258and the light propagating from a surface of specimen 246 may passthrough relatively small sections 242 disposed within process chamberwithout undesirably altering the optical properties of the directed andreturned light. In addition, the substantially optically transparentmaterial may be configured to focus light from light sources 254 and 258onto the surface of semiconductor 246. In this manner, measurementdevice 238 may be coupled to stage 264 disposed within the processchamber. Stage 264 may be configured as described herein.

[0398] Spectroscopic ellipsometry may include focusing an incidence beamof polarized light on a specimen and monitoring a change in polarizationfor at least a portion of the incidence beam reflected from the specimenacross a broad spectrum of wavelengths. Examples of spectroscopicellipsometers are illustrated in U.S. Pat. No. 5,042,951 to Gold et al.,U.S. Pat. No. 5,412,473 to Rosencwaig et al., U.S. Pat. No. 5,581,350 toChen et al., U.S. Pat. No. 5,596,406 to Rosencwaig et al., U.S. Pat. No.5,596,411 to Fanton et al., U.S. Pat. No. 5,771,094 to Carter et al.,U.S. Pat. No. 5,798,837 to Aspnes et al., U.S. Pat. No. 5,877,859 toAspnes et al., U.S. Pat. No. 5,889,593 to Bareket et al., U.S. Pat. No.5,900,939 to Aspnes et al., U.S. Pat. No. 5,910,842 to Piwonka-Corle etal., U.S. Pat. No. 5,917,594 to Norton, U.S. Pat. No. 5,973,787 toAspnes et al., and U.S. Pat. No. 6,256,097 to Wagner and areincorporated by reference as if fully set forth herein. Additionalexamples of spectroscopic devices are illustrated in PCT Application No.WO 99/02970 to Rosencwaig et al. and is incorporated by reference as iffully set forth herein.

[0399] Light source 254 may include any of the light sources asdescribed herein, which may be configured to emit broadband light.Illumination system 244 may include optical component 266 positionedalong a path of the emitted light. Optical component 266 may beconfigured to alter a polarization state of the emitted light such thatlight having a known polarization state such as linearly or circularlypolarized light may be directed to a surface of specimen 246. Inaddition, illumination system 244 may also include an additional opticalcomponent (not shown) configured to focus and direct light emitted fromlight source 254 to the surface of specimen 246. Detection system 248may also include optical component 268 positioned along a path of thelight propagating from the surface of the specimen. Optical component268 may be configured to function as an analyzer of a spectroscopicellipsometer. Detection system 248 may also include a dispersion elementsuch as a spectrometer (not shown). The dispersion element may beconfigured to separate light propagating from the surface of thespecimen having different wavelengths. The separated components of thebeam may be detected by individual elements of detector 256, which maybe configured to function as a detector array. The polarizer may beconfigured to rotate such that a time varying intensity may be detectedby the elements of the detector array. Processor 270 may be configuredto receive one or more output signals from detector 256 and may beconfigured to process the data.

[0400] Output signals from detector 256 may be responsive to anintensity of light at elements of the detector array. Processor 270 maybe configured to convert the output signals to ellipsometric parameters,ψ and δ, by mathematical equations known in the art as described above.Processor 270 may be configured to convert the ellipsometric parameters,ψ and δ, to a property of a layer being formed upon a surface ofspecimen 246 using a mathematical, or optical, model as describedherein. For example, processor 270 may be configured to determine athickness, an index of refraction, and an extinction coefficient of alayer, a portion of a layer, or several layers on specimen 246 from theellipsometric parameters by using an optical model. A thickness, anindex of refraction, and an extinction coefficient may be commonlyreferred to as “thin film” characteristics of a layer.

[0401] Alternatively, processor 270 may be configured to determine acritical dimension of a feature on specimen 246 from one or more outputsignals from measurement device 238. For example, a critical dimensionof a feature may include, but is not limited to, a lateral dimensionsuch as a width, a vertical dimension such as a height, and a sidewallprofile as described herein. In addition, processor 270 may be furtherconfigured to determine a thickness, an index or refraction, and/or anextinction coefficient of a layer of the specimen, and a criticaldimension of a feature on the specimen from one or more output signalsfrom measurement device 238. For example, processor 270 may beconfigured to compare one or more output signals from the measurementdevice with one or more predetermined tables that may include expectedoutput signals versus wavelength for different characteristics such aswidth, height, and sidewall profile. Expected output signals versuswavelength for different characteristics of a predetermined table may bedetermined, for example, experimentally with specimens of knowncharacteristics and/or theoretically through mathematical modeling.

[0402] In addition, processor 270 may be configured to compare one ormore output signals from measurement device 238 with one or morepredetermined tables that may include expected output signals versuswavelength for different characteristics and interpolated data betweenthe expected output signals versus wavelength. Alternatively, processor270 may be configured to perform an iteration using one or more startingguesses through (possibly approximate) equations to converge to a goodfit for one or more output signals from the measurement device. Suitableequations may include, but are not limited to, any non-linear regressionalgorithm known in the art.

[0403] In an additional embodiment, the system may further include acalibration ellipsometer (not shown). The calibration ellipsometer maybe configured to determine a thickness of a reference layer on aspecimen. The thickness of the reference layer may then be measuredusing the spectroscopic ellipsometer of the measurement device asdescribed herein. A phase offset of the thickness measurements of thereference layer generated by the calibration ellipsometer and themeasurement device may be determined by processor 270. The processor maybe configured to use the phase offset to determine additional layerthicknesses from measurements made by the measurement device. Thecalibration ellipsometer may also be coupled to the process chamber ofthe deposition tool. As such, the calibration ellipsometer may be usedto reduce, and even eliminate, variations in measured ellipsometerparameters. For example, measurements of the ellipsometric parameter, δ,may vary due to changing environmental conditions along one or moreoptical paths of the measurement device. Such a variation in theellipsometric parameter, δ, may alter thickness measurements of a layeron a specimen. Therefore, a calibration ellipsometer may be used toreduce, and even eliminate, a drift in thickness measurements of a layeron a specimen.

[0404] Spectroscopic reflectometry may include focusing a broadbandradiation beam on a specimen and measuring a reflectance spectrum andindex of refraction of the specimen from which a thickness of a layermay be determined. Example of spectroscopic reflectometers areillustrated in U.S. Pat. No. 4,999,014 to Gold et al., and U.S. Pat. No.5,747,813 to Norton et al. and are incorporated by reference as if fullyset forth herein. Second illumination system 250 may include lightsource 258 such as xenon arc lamp. Light source 258 may also include anylight source configured to emit broadband light, which may includevisible and ultraviolet light. Second illumination system 250 may alsobe coupled to beam splitter 259. Beam splitter 259 may be configured todirect light emitted by light source 258 to a surface of specimen 246such that a substantially continuous broadband spectrum of light may bedirected to the surface of specimen 246.

[0405] The sample beam may be focused onto a region of specimen 246, andat least a portion of the sample beam reflected from the illuminatedregion may be passed through a spectrometer (not shown) of detectionsystem 252. In addition, detection system 252 may include a diffractiongrating (not shown) configured to disperse light passing therethrough asit enters the spectrometer. In this manner, a resulting first orderdiffraction beam may be collected by detector 260 or detector 262, whichmay include a linear photodiode array. The photodiode array, therefore,may measure a sample reflectance spectrum. A relative reflectance may beobtained by dividing the sample light intensity at each wavelength by arelative reference intensity at each wavelength. A relative reflectancespectrum may be used to determine the thickness of one or more layers onthe specimen. In addition, reflectance at a single wavelength and arefractive index of one or more layers may also be determined from therelative reflectance spectrum.

[0406] Furthermore, a model method by modal expansion (“MMME”) model maybe used to generate a library of various reflectance spectrums. Asdescribed herein, the MMME model is a rigorous diffraction model thatmay be used to determine the theoretical diffracted light “fingerprint”from each grating in the parameter space. Alternative models may also beused to calculate the theoretical diffracted light such as a rigorouscoupling waveguide analysis (“RCWA”) model. The measured reflectancespectrum may be fitted to the library of various reflectance spectrums.

[0407] The polarization state and the intensity of light propagatingfrom a surface of specimen 246 may be altered during formation of alayer on specimen 246. For example, during a deposition process, such aschemical vapor deposition (“CVD”) and low pressure chemical vapordeposition (“LPCVD”) processes, a layer may be formed on specimen 246 byintroducing reactant gases such as silane, chlorosilane, nitrogen and/orammonia in the process chamber. The reactant gases may decompose andreact at a heated surface of a specimen to form a deposited layer ofmaterial. In this manner, a thickness of the layer being formed on asurface of specimen 246 may increase during the deposition process.

[0408] As the thickness of the layer increases during the depositionprocess, the reflectivity of the surface of the layer may varyapproximately sinusoidally with variations in the thickness of thelayer. Therefore, the intensity of the returned light may vary dependingon a thickness of the deposited layer. In addition, the intensity of thereturned light may be approximately equal to the square of the fieldmagnitude according to the equation: I_(r)=|E_(R)|²·I_(r) can also beexpressed in terms of the ellipsometric parameters, ψ and δ. For verythin layers, tan ψ may be independent of thickness, and δ is linearlyproportional to the thickness of the layer. In this manner, one or moreoutput signals responsive to the intensity of the light returned fromthe specimen generated by the measurement device may be used todetermine a thickness of the layer.

[0409] In addition, thickness variations of a layer on a specimen mayvary depending on, for example, parameters of an instrument coupled tothe deposition tool. Parameters of an instrument coupled to thedeposition tool may determine the process conditions of a depositionprocess. For example, a deposition rate may be defined as a thickness ofa layer formed on a surface of a specimen in a period of time. Thedeposition rate, therefore, may affect variations in the thickness of alayer on a specimen during a deposition process. A deposition rate maybe substantially constant throughout a deposition process.Alternatively, a deposition rate may vary throughout a depositionprocess. The deposition rate may vary depending on a number ofparameters of one or more instruments coupled to the deposition toolthat may include, but are not limited to, temperature within the processchamber, temperature gradients in the process chamber, pressure withinthe process chamber, total flow rates of the reactant gases, reactantgas ratios, and a flow rate of one or more dopant gases. In this manner,intensity variations of light propagating from a surface of the specimenmay vary depending upon parameters of an instrument coupled to thedeposition tool. Therefore, a processor coupled to a measurement devicemay be configured to determine a parameter of an instrument coupled to adeposition tool from the measured intensity variations of the lightpropagating from a surface of the specimen during a deposition process.

[0410] In an embodiment, a processor coupled to a measurement device, asshown in FIG. 23, may be configured to determine a property of a layerformed on a specimen from detected light. The measurement device may beconfigured as described in above embodiments. The property of the formedlayer may include, but is not limited to, a thickness, an index ofrefraction, an extinction coefficient, a critical dimension, or anycombination thereof. Subsequent to a deposition process, the specimenmay be polished such that an upper surface of the deposited material maybe substantially planar. Subsequent to polishing, a layer of resist maybe formed on the deposited layer and the layer of resist may be exposedto pattern the resist during a lithography process. In this manner,selected regions of the deposited layer may exposed, and at least aportion of the selected regions may be removed in an etch process. Aconductive material such as aluminum or copper may be deposited in theetched portions of the deposited layer and on an upper surface of thedeposited layer, for example, by a physical vapor deposition process.The specimen may be polished such that an upper surface of the specimenmay be substantially planar. In this manner, a number of semiconductorfeatures such as interlevel contact structures may be formed on thespecimen.

[0411] The properties of the semiconductor features formed on thespecimen may vary depending upon, for example, properties of thedeposited layer and the conductive material and process conditions ofthe deposition, polishing, lithography, etch, and physical vapordeposition processes. As such, properties of semiconductor features on aspecimen may be determined using the determined properties of thedeposited layer. In addition, a processor coupled to the measurementdevice may also be configured to determine a presence of defects such asforeign material on the deposited layer prior to, during, or subsequentto the deposition process from the detected light.

[0412] In an additional embodiment, processor 270, as shown in FIG. 23,may be coupled to measurement device 238 and deposition tool 240. Theprocessor may be configured to interface with the measurement device andthe deposition tool. For example, the processor may receive one or moresignals from the deposition tool during a deposition process. Thesignals may be representative of a parameter of one or more instrumentscoupled to the deposition tool. The processor may also be configured toreceive one or more signals from the measurement device. Signals fromthe measurement device may be representative of the detected light fromdetector 256, 260, and 262 as described herein. In an additionalembodiment, measurement device 238 may be configured, as describedherein, to measure variations in the intensity of light propagating fromthe specimen during a deposition process. For example, measurementdevice 238 may be configured to measure the intensity of lightpropagating from the specimen substantially continuously or atpredetermined time intervals during a deposition process. The processormay, therefore, be configured to monitor variations in output signalsfrom the measurement device during a deposition process. In this manner,the processor may be configured to determine a relationship between themonitored variations and/or the output signals from the measurementdevice and output signals from the deposition tool responsive to aparameter of one or more instruments coupled to the deposition tool. Assuch, the processor may be configured to alter a parameter of one ormore instruments coupled to the deposition tool using the determinedrelationship. In addition, the processor may be configured to determinea parameter of one or more instruments using the determined relationshipand one or more output signals from the measurement device.

[0413] Additionally, the processor may be further configured to controlthe measurement device and the deposition tool. For example, theprocessor may be configured to alter a parameter of an instrumentcoupled to the deposition tool in response to the detected light. Inthis manner, the processor may be configured to alter a parameter of aninstrument coupled to the deposition tool using an in situ controltechnique. In addition, the processor may be configured to alter aparameter of an instrument coupled to the measurement device in responseto the detected light. For example, the processing device may beconfigured to alter a sampling frequency of the measurement device inresponse to the detected light.

[0414] By analyzing variations in output signals from the measurementdevice during a deposition process, processor 270 may also generate asignature, which may be representative of the formation of a layer onspecimen 246. The signature may include at least one singularity thatmay be characteristic of an endpoint of the deposition process. Forexample, an appropriate endpoint for a deposition process may be apredetermined thickness of a layer on the specimen. A predeterminedthickness of a layer on the specimen may be larger or smaller dependingupon, for example, the semiconductor device fabricated by the depositionprocess. After the processor has detected the singularity of thesignature, the processor may be configured to reduce, and eventerminate, deposition of the layer on the specimen by altering aparameter of an instrument coupled to the deposition tool.

[0415] In an embodiment, processor 270 may be configured to use one ormore output signals from measurement device 238 to determine a parameterof one or more instruments coupled to deposition tool 240 for depositionof layers on additional specimens. For example, a thickness of a layeron a specimen may be determined using one or more output signals frommeasurement device 238. The thickness of the layer on the specimen maybe greater than a predetermined thickness. Therefore, before processingadditional specimens, a flow rate of a reactant gas or another parameterof one or more instruments coupled to the deposition tool may bealtered. In this manner, a thickness of layers formed on the additionalspecimens may be closer to the predetermined thickness than the measuredlayer. For example, the flow rate of the reactant gas used in thedeposition process may be decreased to deposit a thinner the layer onthe additional specimens. In this manner, the processor may be used toalter a parameter of one or more instruments coupled to a depositiontool in response to one or more output signals of the measurement deviceusing a feedback control technique.

[0416] In an additional embodiment, processor 270 may be configured todetermine a parameter of one or more instruments coupled to a processtool, configured to perform additional semiconductor fabricationprocesses, using one or more output signals from measurement device 238.The additional semiconductor fabrication processes may be performedsubsequent to a deposition process. Additional semiconductor fabricationprocesses performed subsequent to a deposition process may include, butare not limited to, a chemical-mechanical polishing process configuredto planarize a deposited layer on the specimen. For example, a thicknessof a layer deposited on a specimen during a deposition process may bedetermined using one or more output signals from the measurement device.The determined thickness of the deposited layer may be greater than apredetermined thickness for the layer.

[0417] Process conditions of a subsequent polishing process, however,may be optimized for the predetermined thickness of the deposited layeron the specimen. Therefore, before polishing the deposited layer, aparameter of one or more instruments coupled to a polishing tool such asprocess time or pressure applied to a back side of the specimen may bealtered such that an upper surface of the deposited layer may beplanarized. For example, a process time may be increased to ensuresubstantially complete planarization of the deposited layer. In thismanner, the processor may be configured to alter a parameter of aninstrument coupled to a chemical mechanical polishing tool in responseto one or more output signals from the measurement device using afeedforward control technique. In addition, the processor and themeasurement device may be further configured according to any of theembodiments described herein. For example, a processor coupled to themeasurement device may also be configured to detect defects on thespecimen, a thickness of a deposited material, a sheet resistivity of adeposited material, a thermal diffusivity of a deposited material, orany combination thereof during the deposition process using one or moreoutput signals from the measurement device.

[0418] In an embodiment, a method for determining a characteristic of aspecimen during a deposition process may include disposing the specimenupon a stage. The stage may be disposed within a process chamber of adeposition tool, as shown in FIG. 23. The stage may also be configuredto support the specimen during a deposition process. The measurementdevice may be coupled to the deposition tool, as shown in FIG. 23. Assuch, the stage may be coupled to a measurement device. In addition, themeasurement device may be configured as described in above embodiments.The method may include directing light to a surface of the specimen. Thedirected light may have a known polarization state. The directed lightmay strike the surface of the specimen. A layer may be formed on thesurface of the specimen during the deposition process.

[0419] In addition, the method may include detecting light propagatingfrom the surface of the specimen during the deposition process. Themethod may also include generating one or more output signals responsiveto an intensity and/or a polarization state of the detected light. Theintensity and/or polarization state of the detected light may varydepending on, for example, one or more characteristics of a layer formedon the specimen. Therefore, such one or more output signals may be usedto determine one or more characteristics of the formed layer. In thismanner, the method may include determining one or more characteristicsof a layer being formed on a specimen. Furthermore, the method mayinclude determining one or more characteristics of more than one layerbeing formed on the specimen. The one or more characteristics mayinclude, but are not limited to, a thickness, an index of refraction, anextinction coefficient of one or more layers on the specimen, a criticaldimension of a feature on the specimen, a presence of defects on thespecimen, or any combination thereof.

[0420] In additional embodiments, the method for determining acharacteristic of a layer on a specimen during a deposition process mayinclude steps of any methods as described herein. For example, themethod may include altering a parameter of an instrument coupled to thedeposition tool in response to one or more output signals responsive toan intensity and/or a polarization state of the detected light. In thismanner, the method may include altering a parameter of an instrumentcoupled to the deposition tool using a feedback control technique, an insitu control technique, or a feedforward control technique. In addition,the method may include altering a parameter of an instrument coupled tothe measurement device in response to the one or more output signals.For example, the method may include altering a sampling frequency of themeasurement device in response to the one or more output signals.Furthermore, the method may include obtaining a signature characterizingdeposition of a layer on the specimen. The signature may include atleast one singularity representative of an endpoint of the depositionprocess. For example, an appropriate endpoint for an deposition processmay be a predetermined thickness of a layer formed on the specimen. Inaddition, the predetermined thickness may be larger or smaller dependingupon, for example, the semiconductor device feature fabricated by thedeposition process. Subsequent to obtaining the singularityrepresentative of the endpoint, the method may include altering aparameter of an instrument coupled to the deposition tool to reduce, andeven terminate, the deposition process.

[0421] In an embodiment, a computer-implemented method may be used tocontrol a system configured to determine a characteristic of a layerduring a deposition process. The system may include a measurement devicecoupled to an deposition tool, as described herein. The method mayinclude controlling the measurement device. Controlling the measurementdevice may include controlling a light source to direct light to asurface of the specimen such that the directed light may strike thesurface of the specimen. The directed light may have a knownpolarization state. In addition, controlling the measurement device mayinclude controlling a detector to detect light propagating from thesurface of the specimen during the deposition process. Furthermore, themethod may include processing the detected light to determine anintensity or a polarization state of the detected light. For example,the method may include processing the detected light may includegenerating one or more output signals responsive to the detected light.The method may further include determining one or more characteristicsof a layer being formed on the specimen using the one or more outputsignals. The one or more characteristics may include a thickness, anindex of refraction, and an extinction coefficient of the layer on thespecimen, a critical dimension of a feature on the specimen, a presenceof defects on the specimen, or any combination thereof.

[0422] In additional embodiments, the computer-implemented method forcontrolling a system to determine a characteristic of a layer beingformed on a specimen during a deposition process may include steps ofany of the methods as described herein. For example, the method mayinclude controlling an instrument coupled to the deposition tool toalter a parameter of the instrument in response to the one or moreoutput signals. Controlling an instrument coupled to the deposition toolmay include using a feedback control technique, an in situ controltechnique, and/or a feedforward control technique. In addition, themethod may include controlling an instrument coupled to the measurementdevice to alter a parameter of the instrument in response to the one ormore output signals. For example, the method may include controlling aninstrument coupled to the measurement device to alter a samplingfrequency of the measurement device in response to the one or moreoutput signals.

[0423] In an additional example, the computer-implemented method mayinclude controlling the measurement device to obtain a signaturecharacterizing deposition of a layer on the specimen. The signature mayinclude at least one singularity representative of an endpoint of thedeposition process. For example, an appropriate endpoint for adeposition process may be a predetermined thickness of a layer depositedon the specimen. Subsequent to obtaining the singularity representativeof the endpoint, the method may include controlling a parameter of aninstrument coupled to the deposition tool to alter the parameter of theinstrument to reduce, and even terminate, deposition of the layer on thespecimen.

[0424] An additional embodiment relates to a method for fabricating asemiconductor device. The method may include disposing a specimen suchas a wafer upon a stage. The stage may be disposed within a processchamber of a deposition tool. The stage may be configured to support thespecimen during a deposition process. A measurement device may also becoupled to the process chamber of the deposition tool. In this manner,the stage may be coupled to the measurement device. The method mayfurther include forming a portion of a semiconductor device upon thespecimen. For example, forming a portion of a semiconductor device mayinclude depositing a layer of material on the specimen. Depositing thelayer on the specimen may include forming a layer of a dielectricmaterial over a specimen having a plurality of dies. The plurality ofdies may include repeatable pattern features. For example, the depositedlayer may be used to electrically isolate proximate or adjacent featuresof a semiconductor device that may be formed on the specimen.

[0425] The method for fabricating a semiconductor device may alsoinclude directing light toward a surface of the specimen. The directedlight may have a known polarization state. The method may also includedetecting light propagating from the surface of the specimen during thedeposition process. In addition, the method may include determining anintensity and/or a polarization state of the detected light. Theintensity and/or the polarization state of the detected light may varydepending upon, for example, one or more characteristics of a layerformed on the specimen. The method may also include generating one ormore output signals responsive to an intensity and/or a polarizationstate of the detected light. In this manner, the method may includedetermining a characteristic of a layer deposited on the specimen usingthe one or more output signals. The characteristic may include athickness, an index of refraction, and an extinction coefficient of thelayer on the specimen, a critical dimension of a feature on thespecimen, or any combination thereof.

[0426] In additional embodiments, the method for fabricating asemiconductor device may include steps of any of the methods asdescribed herein. For example, the method may include altering aparameter of an instrument coupled to the deposition tool in response tothe one or more output signals. Altering a parameter of an instrumentcoupled to the deposition tool may include using a feedback controltechnique, an in situ control technique, and/or a feedforward controltechnique. In addition, the method may include altering a parameter ofan instrument coupled to the measurement device in response to the oneor more output signals. For example, the method may include altering asampling frequency of the measurement device in response to the one ormore output signals. Furthermore, the method may include obtaining asignature characterizing deposition of a layer on the specimen. Thesignature may include at least one singularity representative of anendpoint of the deposition process. For example, an appropriate endpointfor a deposition process may be a predetermined thickness of a layerdeposited on the specimen. Subsequent to obtaining the singularityrepresentative of the endpoint, the method may include altering aparameter of an instrument coupled to the deposition tool to reduce, andeven terminate, the deposition process.

[0427]FIG. 24 illustrates an embodiment of a system configured toevaluate an etch process. In an embodiment, a system configured toevaluate an etch process may include measurement device 272 coupled toprocess chamber 274 of an etch tool. Measurement device 272 may becoupled to process chamber 274 such that the measurement device may beexternal to the process chamber. As such, exposure of the measurementdevice to chemical and physical conditions within the process chambermay be reduced, and even eliminated. Furthermore, the measurement devicemay be externally coupled to the process chamber such that themeasurement device may not alter the operation, performance, or controlof the etch process. For example, a process chamber may include one ormore relatively small sections of a substantially optically transparentmaterial 276 disposed within walls of process chamber 274. Theconfiguration of process chamber 274, however, may determine anappropriate method to couple measurement device 272 to the processchamber. For example, the placement and dimensions of substantiallyoptically transparent material sections 276 within walls of the processchamber may vary depending on, for example, the configuration of thecomponents within the process chamber.

[0428] In an alternative embodiment, measurement device 272 may bedisposed in a measurement chamber, as described with respect to andshown in FIG. 16. The measurement chamber may be coupled to processchamber 274 of an etch tool, as shown in FIG. 17. For example, themeasurement chamber may be disposed laterally or vertically proximateone or more process chambers of an etch tool. In this manner, a roboticwafer handler of an etch tool, stage 280, or another suitable mechanicaldevice may be configured to move specimen 278 to and from themeasurement chamber and process chambers of the etch tool. In addition,the robotic wafer handler, the stage, or another suitable mechanicaldevice may be configured to move specimen 278 between process chambersof the etch tool and the measurement chamber. Measurement device 272 maybe further coupled to process chamber 272 as further described withrespect to FIG. 17.

[0429] Examples of etch tools are illustrated in U.S. Pat. No. 4,842,683to Cheng et al., U.S. Pat. No. 5,215,619 to Cheng et al., U.S. Pat. No.5,614,060 to Hanawa, 5,770,099 to Rice et al., U.S. Pat. No. 5,882,165to Maydan et al., U.S. Pat. No. 5,849,136 to Mintz et al., U.S. Pat. No.5,910,011 to Cruse, U.S. Pat. No. 5,926,690 to Toprac et al., U.S. Pat.No. 5,976,310 to Levy, U.S. Pat. No. 6,072,147 to Koshiishi et al., U.S.Pat. No. 6,074,518 to Imafuku et al., U.S. Pat. No. 6,083,363 toAshtiani et al., and U.S. Pat. No. 6,089,181 to Suemasa et al., U.S.Pat. No. 6,110,287 to Arai et al., and are incorporated by reference asif fully set forth herein. An additional example of a measurement devicecoupled to an etch tool is illustrated in PCT Application No. WO99/54926 to Grimbergen et al., and is incorporated by reference as iffully set forth herein. In WO 99/54926, a measurement device coupled toan etch tool is described as a “reflectance thickness measuringmachine,” which is substantially different than a measurement device asdescribed herein. An example of an apparatus for estimating voltage on awafer located in a process chamber is illustrated in European PatentApplication No. EP 1 072 894 A2 to Loewenhardt et al., and isincorporated by reference as if fully set forth herein.

[0430] Measurement device 272 may be configured to direct an incidentbeam of light having a known polarization state to specimen 278 suchthat a region of the specimen may be illuminated prior to, during, orsubsequent to an etch process. In addition, the measurement device maybe configured to analyze a polarization state of the light returned fromthe illuminated region of the specimen prior to, during, or subsequentto an etch process. For example, the measurement device may include abeam profile ellipsometer. Additionally, however, measurement device 272may include a spectroscopic beam profile ellipsometer, a nullellipsometer, and/or a spectroscopic ellipsometer. Furthermore,measurement device 272 may be configured as a scatterometer as describedherein.

[0431] The relatively small sections of transparent material 276 maytransmit an incident beam of light from a light source outside theprocess chamber to a specimen within the process chamber and a returnedlight beam from specimen 278 to a detector outside the process chamber.The optically transparent material may have optical or materialproperties such that the incident beam of light and the returned lightbeam may pass through the relatively small sections of transparentmaterial without substantially undesirably altering the opticalproperties of the incident and returned light beams. In this manner,measurement device 272 may be coupled to stage 280 disposed within theprocess chamber and configured to support the specimen 278.

[0432] Measurement device 272 may include light source 282 configured togenerate an incident beam of light. Light source 282 may include, forexample, a laser configured to emit light having a known polarizationstate such as a gas laser or a solid state laser diode. Such laserstypically may emit light having a single wavelength of 633 nm and 670nm, respectively. Measurement device 272 may also include polarizationsection 284 which may include, but is not limited to, a linear orcircular polarizer or a birefringent quarter wave plate compensator. Thepolarization section may be configured to convert linear polarized lightinto circularly polarized light. In this manner, an incident beam oflight having a known polarization state may be directed toward thespecimen. In addition, measurement device 272 may include beam splitter286 configured to direct at least a portion of the incident beam oflight to an upper surface of specimen 278. Beam splitter 286 may also beconfigured to direct the incident beam through high numerical aperture(“NA”) lens 288. In this manner, measurement device 272 may beconfigured to direct the incident beam of light to specimen 278 at anumber of angles of incidence. For example, high NA lens 288 may have anumerical aperture of approximately 0.9. The numerical aperture of thelens may be larger or smaller, however, depending on, for example, thenumber of angles of incidence required. In addition, high NA lens 288may be configured to focus the incident beam to a very small spot sizeon the upper surface of specimen 278. In this manner, the incident beammay be directed at a number of angles of incidence to a single featureor region on the specimen. Beam splitter 286 may also be configured totransmit a portion of the incident beam light such that the transmittedportion of the incident beam of light may be configured to strikedetector 283. Detector 283 may be configured to monitor fluctuations inthe output power of light source 282.

[0433] Light returned from the surface of specimen 278 may pass backthrough high NA lens 288 and beam splitter 286 to polarizer 290.Polarizer 290 may include, for example, a rotating polarizing filter.The measurement device may also include detector 292 configured tomeasure an intensity of the returned light at a number of angles ofincidence. For example, detector 292 may include a diode array that maybe radially positioned in a two-dimensional array such that theintensity of returned light may be measured at a number of angles ofincidence.

[0434] In an alternative embodiment, light returned from the specimenmay pass through quarter-wave plate 294. The quarter-wave plate may beconfigured to retard the phase of one of the polarization states of thereturned light by about 90 degrees. In such a measurement device,polarizer 290 may be configured to cause the two polarization states tointerfere. Detector 292 for such a measurement device may include aquad-cell detector having four quadrants. Each quadrant of the detectormay be configured to generate one or more output signals approximatelyproportional to the magnitude of the power of the returned lightstriking the quadrant of the detector. Each signal may represent anintegration of the intensities of the returned light at different anglesof incidence. Such a quad-cell detector may also be configured tooperate as a full power detector if the one or more output signals fromall of the quadrants is summed.

[0435] In each of the embodiments described above, processor 296 may beconfigured to determine a thickness, an index of refraction, anextinction coefficient of the specimen and/or a critical dimension of afeature on the specimen from one or more output signals of detector 292.For example, processor 296 may determine a thickness of a layer or afeature on specimen 278 or a thickness of a feature such as an isolationstructure formed in specimen 278 from one or more output signals ofdetector 292.

[0436] In an additional alternative embodiment, light source 282 may beconfigured to generate broadband light having a known polarizationstate. An appropriate light source may include a polychromatic lightsource such as a tungsten halogen lamp. For such a configuration of themeasurement device, light returned from the specimen may be passedthrough a filter (not shown). The filter may be configured to pass lightthrough two quadrants of the filter and to block light through two otherquadrants of the filter. As such, light passed through the filter mayhave an ellipsometric signal, δ, of only one sign, for example,positive. After passing through the filter, the returned light may passthrough a spatial filter (not shown) having a small aperture. Thespatial filter may be configured to limit the wavelength of light thatmay be directed to detector 292. As such, the width of the aperture ofthe spatial filter may be larger or smaller depending on, for example,the desired wavelength resolution.

[0437] The measurement device may also include a grating (not shown)configured to focus the returned light such that light from all anglesof incidence may be combined and to angularly disperse the returnedlight as a function of wavelength. The grating may include a curvedgrating and a curved mirror, a lens and a separate planar grating, or aprism. Detector 292 may include an array of a plurality of individualdetector elements. In this manner, the detector may be configured tomeasure an intensity of returned light over a narrow wavelength regimeand a number of angle of incidences. As such, the spatial filter, thegrating, and the detector may have a configuration substantially similarto a conventional spectrophotometer.

[0438] The measurement device may be further configured to perform asecond measurement of light returned from the surface of the specimen.In this measurement, light passed through the filter may have anellipsometric signal, δ, opposite to the sign of the light passedthrough the filter for the first measurement (i.e., negative). In theadditional embodiments described above, processor 296 may also beconfigured to determine a thickness, an index of refraction, anextinction coefficient of the specimen, and/or a critical dimension of afeature on the specimen from one or more output signals of the detector.For example, the processor may be configured to determine a thickness ofa layer on specimen 278 or a feature such as an isolation structureformed in specimen 278 from the one or more output signals of thedetector. Examples of beam profile ellipsometers are illustrated in U.S.Pat. No. 5,042,951 to Gold et al., U.S. Pat. No. 5,181,080 to Fanton etal., U.S. Pat. No. 5,596,411 to Fanton et al., U.S. Pat. No. 5,798,837to Aspnes et al., and 5,900,939 to Aspnes et al., and are incorporatedby reference as if fully set forth herein.

[0439] In an additional embodiment, the system may further include acalibration ellipsometer (not shown). The calibration ellipsometer maybe configured to determine a thickness of a reference layer on aspecimen. The thickness of the reference layer may be measured using themeasurement device as described herein. A phase offset of the thicknessmeasurements of the reference layer generated by the calibrationellipsometer and the measurement device may be determined by processor296. The processor may be configured to use the phase offset todetermine additional layer thicknesses from measurements made by themeasurement device. The calibration ellipsometer may also be coupled toprocess chamber 274 of the etch tool. As such, the calibrationellipsometer may be used to reduce, and even eliminate, variations inmeasured ellipsometer parameters. For example, measurements of theellipsometric parameter, δ, may vary due to changing environmentalconditions along one or more optical paths of the measurement device.Such a variation in the ellipsometric parameter, δ, may alter thicknessmeasurements of a layer on a specimen. Therefore, a calibrationellipsometer may be used to reduce, and even eliminate, a drift inthickness measurements of a layer on a specimen.

[0440] The polarization state of light returned from a specimen may bealtered during etching of the specimen. For example, during an etchprocess such as a reactive ion etch (“RIE”) or a plasma etch process, aselectively exposed layer on the specimen may be removed by chemicalreactions involving chemical reactive species of plasma 298 and asurface of specimen 278 and ionic species of plasma 298 striking thesurface of specimen 278. In this manner, a thickness of the selectivelyexposed layer may be removed during the etch process. As the thicknessof the layer is reduced during the etch process, the reflectivity of thelayer may vary approximately sinusoidally with variations in thethickness of the layer. Therefore, the intensity of the returned lightmay vary depending on a thickness of the selectively exposed layer. Inaddition, the intensity of the returned light may be approximately equalto the square of the field magnitude according to the equation:I_(r)=|E_(R)|²·I_(r) can also be expressed in terms of the ellipsometricparameters, Ψ and δ. For very thin layers, tan Ψ may be independent ofthickness, and δ may be approximately linearly proportional to thethickness of the layer. In this manner, output signals from themeasurement device responsive to the intensity of the light returnedfrom the specimen may be used to determine a thickness of the layer.

[0441] An etch rate may be defined as a thickness of a layer on aspecimen that may be removed in a period of time. The etch rate,therefore, may determine the variations in the thickness of a layer on aspecimen during an etch process. An etch rate may be substantiallyconstant throughout an etch process. Alternatively, an etch rate mayvary throughout an etch process. For example, an etch rate may decreaseexponentially throughout an etch process. The etch rate may bedetermined by a number of parameters of one or more instruments coupledto the etch tool. For example, one parameter may include a flow rate ofetchant gases from gas source 300 to process chamber 274 of the etchtool. The flow rate may vary depending upon, for example, a parametersuch as a position or a setting of an instrument such as valve 301. Inaddition, such parameters may also include radio frequency power values,which may be determined by instruments such as power supplies 302 and304 coupled to process chamber 274. An additional parameter may includea pressure within the process chamber and may be determined byinstrument 306, which may be configured as a pressure gauge.

[0442] Such parameters may affect thickness variations of a layer on aspecimen during an etch process. For example, as pressure decreases in aprocess chamber, a thickness of a layer on a specimen may be removed atan increased rate during the etch process. In this manner, an intensityof a returned sample beam may vary depending upon a parameter of one ormore instruments coupled to the process chamber of the etch tool.Therefore, processor 296 coupled to measurement device 272 may beconfigured to determine a parameter of an instrument coupled to processchamber 274 of the etch tool from the measured intensity of the returnedsample beam during an etch process.

[0443] In an embodiment, processor 296 coupled to measurement device 272may be configured to receive one or more output signals from detector292. In addition, the processor may be configured to determine aproperty of an etched region of specimen 278 from the one or more outputsignals. Measurement device 272 may be configured as described herein.For example, measurement device 272 may be configured as a beam profileellipsometer, a spectroscopic beam profile ellipsometer, a nullellipsometer, a spectroscopic ellipsometer and/or a scatterometer asdescribed herein. Therefore, property of the etched region may include,but is not limited to, a thickness, an index of refraction, anextinction coefficient, a critical dimension of a feature on thespecimen, or any combination thereof. Thickness, index of refraction,and/or extinction coefficient may be commonly referred to as “thin film”characteristics.

[0444] Subsequent to an etch process, a specimen may be stripped toremove residual masking material from the specimen. In addition, amaterial such as a conductive material may be deposited upon thespecimen. The specimen may also be polished such that an upper surfaceof the specimen may be substantially planar. In this manner, a number ofsemiconductor features such as interlevel contact structures may beformed on the specimen. The properties of the semiconductor featuresformed on the specimen may vary depending on, for example, one or moreproperties of the etched region and process conditions of the stripping,deposition, and polishing processes. As such, properties of asemiconductor feature on specimen 278 may be determined using thedetermined properties of the etched region. In addition, processor 296coupled to measurement device 272 may also be configured to determine apresence of defects such as foreign material on the specimen, prior to,during, or subsequent to the etch process from one or more outputsignals from detector 292.

[0445] In an additional embodiment, processor 296 may be coupled tomeasurement device 272 and process chamber 274 of an etch tool.Processor 296 may be configured to interface with measurement device 272and process chamber 274. For example, processor 296 may receive one ormore output signals from a device coupled to process chamber 274 duringan etch process. Such one or more output signals may be responsive to aparameter of an instrument coupled to the process chamber such aspressure gauge 306. Processor 296 may also be configured to receive oneor more output signals from detector 292 as described herein.

[0446] In an additional embodiment, the measurement device may beconfigured, as described above, to measure variations in the intensityof light returned from the specimen during an etch process. For example,the measurement device may be configured to measure the intensity oflight returned from the specimen substantially continuously or atpredetermined time intervals during an etch process. The processor may,therefore, receive output signals responsive of the intensity of lightreturned from the specimen from the measurement device and may monitorvariations in the output signals during an etch process. In addition,processor 296 may be configured to determine a relationship between theoutput signals from measurement device 272 and a parameter of one ormore instruments coupled to process chamber 274. As such, processor 296may be configured to alter a parameter of one or more instrumentscoupled to process chamber 274 in response to the determinedrelationship. In addition, the processor may be configured to determinea parameter of the instrument using the relationship and one or moreoutput signals from the measurement device.

[0447] Additionally, processor 296 may be further configured to controlmeasurement device 272 and etch tool 274. For example, the processor maybe configured to alter a parameter of an instrument coupled to the etchtool in response to one or more output signals from the measurementdevice. The processor may be configured to alter a parameter of aninstrument coupled to the etch tool using a feedback control technique,an in situ control technique, and/or a feedforward control technique. Inaddition, the processor may be configured to alter a parameter of aninstrument coupled to the measurement device in response to one or moreoutput signals from the measurement device. For example, the processormay be configured to alter a sampling frequency of the measurementdevice in response to the output signals from the measurement device, asdescribed herein.

[0448] By analyzing variations in output signals from the measurementdevice during an etch process, the processor may also generate asignature that may be responsive to the etch process. The signature mayinclude at least one singularity that may be characteristic of anendpoint of the etch process. For example, an endpoint for an etchprocess may be a predetermined thickness of a layer on the specimen. Apredetermined thickness of a layer on the specimen may be larger orsmaller depending upon, for example, a semiconductor device beingfabricated on the specimen. In addition, an endpoint for an etch processmay be approximately complete removal of a layer on a specimen. Such anendpoint may correspond to etching through substantially an entirethickness of a layer such that an underlying layer of material may beexposed for subsequent processing. After the processor has detected thesingularity of the signature, the processor may reduce, and eventerminate, etching of the specimen by altering a parameter of aninstrument coupled to the etch tool. A method for detecting an endpointof an etch process is illustrated in PCT Application Nos. WO 00/03421 toSui et al. and WO 00/60657 to Grimbergen et al., and is incorporated byreference as if fully set forth herein.

[0449] In an embodiment, the processor may be configured to determine aparameter of one or more instruments coupled to the etch tool forsubsequent etch processes of additional specimens using one or moreoutput signals from the measurement device. For example, a thickness ofa layer on the specimen may be determined using one or more outputsignals from the measurement device. The thickness of the layer on thespecimen may be, for example, greater than a predetermined thickness.The predetermined thickness may vary depending on, for example, afeature of a semiconductor device, which may be fabricated during theetch process. Before processing additional specimens, a radio frequencypower or another parameter of one or more instruments coupled to theetch tool may be altered. For example, the radio frequency power of theetch process may be increased to etch a greater thickness of a layer onadditional specimens. In this manner, a thickness of a layer onadditional specimens etched by the etch process may be closer to thepredetermined thickness than the layer measured on the specimen. In thismanner, the processor may be configured to alter a parameter of one ormore instruments coupled to an etch tool in response to output signalsfrom the measurement device using a feedback control technique.

[0450] In an additional embodiment, the processor may be configured todetermine process conditions of additional semiconductor fabricationprocesses using one or more output signals from the measurement device.The additional semiconductor fabrication processes may be performedsubsequent to an etch process. Additional semiconductor fabricationprocesses performed subsequent to the etch process may include, but arenot limited to, a process to strip a masking material on the specimen.Typically, a masking material may be patterned on a specimen using alithography process such that regions of the specimen may be exposedduring subsequent processing. At least a portion of the exposed regionsof the specimen may be removed during a subsequent etch process.

[0451] Masking material remaining on the specimen after the etch processmay be removed by a stripping process. A thickness of a masking materialon a specimen during or subsequent to an etch process may be determinedusing one or more output signals from the measurement device. Thedetermined thickness of the masking material on the specimen subsequentto an etch process may be, for example, greater than a predeterminedthickness. Current process conditions of a stripping process, however,may be optimized for the predetermined thickness of the masking materialon the specimen. Therefore, before stripping the masking material, aprocess condition of the stripping process such as process time orprocess temperature may be altered such that substantially the entiremasking material may be removed by the stripping process. For example, aprocess time of the stripping process may be increased such thatapproximately an entire thickness of the masking material may be removedfrom the specimen. In this manner, the processor may be configured toalter a parameter of an instrument coupled to a stripping tool inresponse to one or more output signals from the measurement device usinga feedforward control technique. In addition, the processor may befurther configured according to any of the embodiments described herein.

[0452] In an embodiment, a method for determining a characteristic of aspecimen during an etch process may include disposing specimen 278 uponstage 280. Stage 280 may be disposed within process chamber 274 of anetch tool. The stage may be configured to support the specimen during anetch process. Measurement device 272 may be coupled to process chamber274 of the etch tool as described herein. As such, stage 280 may becoupled to measurement device 272. In addition, measurement device 272may be configured as described herein. The method may include directingan incident beam of light to a region of the specimen. The incident beamof light may have a known polarization state. The directed incident beamof light may illuminate the region of the specimen at multiple angles ofincidence during the etch process. The illuminated region of thespecimen may be an exposed region of the specimen being removed duringthe etch process.

[0453] In addition, the method may include detecting light returned fromthe illuminated region of the specimen during the etch process. Themethod may also include generating one or more output signals inresponse to the detected light. The one or more output signals may beresponsive to a polarization state of the light returned from theilluminated region of the specimen. Therefore, the method may includedetermining a change in a polarization state of the incident beam oflight returned from the specimen. The change in the polarization stateof the incident beam of light returned from the specimen may varydepending upon, for example, one or more characteristics of the specimensuch as a thickness of a layer on the specimen. In this manner, themethod may include determining one or more characteristics of a layer onthe specimen using the one or more output signals. Furthermore, themethod may include determining one or more characteristics of more thanone layer on the specimen using the one or more output signals. Suchcharacteristics may include a thickness, an index of refraction, and anextinction coefficient of the layer on the specimen, a criticaldimension of a feature on the specimen, or any combination thereof.

[0454] In additional embodiments, the method for determining acharacteristic of a layer on a specimen during an etch process mayinclude any steps of the embodiments as described herein. For example,the method may include altering a parameter of one or more instrumentscoupled to the etch tool in response to one or more output signals fromthe measurement device. In this manner, the method may include alteringa parameter of one or more instrument coupled to the etch tool using afeedback control technique, an in situ control technique, and/or afeedforward control technique. In addition, the method may includealtering a parameter of one or more instruments coupled to themeasurement device in response to one or more output signals from themeasurement device. For example, the method may include altering asampling frequency of the measurement device in response to one or moreoutput signals from the measurement device.

[0455] Furthermore, the method may include obtaining a signaturecharacterizing an etch process. The signature may include at least onesingularity representative of an endpoint of the etch process. Forexample, an endpoint of an etch process may be a predetermined thicknessof a layer on the specimen. In addition, the predetermined thickness maybe larger or smaller depending upon, for example, a semiconductor devicebeing fabricated on the specimen. Subsequent to obtaining thesingularity representative of the endpoint, the method may includealtering a parameter of one or more instruments coupled to the etch toolto reduce, and even terminate, the etch process.

[0456] An additional embodiment relates to a computer-implemented methodfor controlling a system configured to determine a characteristic of aspecimen during an etch process. The system may include a measurementdevice coupled to an etch tool as described herein. The method mayinclude controlling the measurement device to detect light returned froma region of the specimen during an etch process. For example,controlling the measurement device may include controlling a lightsource to direct an incident beam of light to a region of the specimenduring an etch process. The light source may be controlled such that theincident beam of light may illuminate the region of the specimen atmultiple angles of incidence during the etch process. The incident beamof light may have a known polarization state. The illuminated region ofthe specimen may include a region of the specimen being removed duringthe etch process. In addition, controlling the measurement device mayinclude controlling a detector to detect at least a portion of lightreturned from the illuminated region of the specimen during the etchprocess. The method may also include generating one or more outputsignals responsive to the detected light. Furthermore, the method mayinclude processing the one or more output signals to determine a changein a polarization state of the incidence beam of light returned from theilluminated region of the specimen. The method may further includedetermining one or more characteristics of a layer on the specimen usingthe one or more output signals. The characteristics may include, but arenot limited to, a thickness, an index of refraction, an extinctioncoefficient of the layer on the specimen, and/or a critical dimension ofa feature on the specimen, or any combination thereof.

[0457] In additional embodiments, the computer-implemented method forcontrolling a system configured to determine a characteristic of aspecimen during an etch process may include steps of any of theembodiments as described herein. For example, the method may includecontrolling an instrument coupled to the etch tool to alter a parameterof the instrument in response to one or more output signals from themeasurement device. The method may include controlling an instrumentcoupled to the etch tool to alter a parameter of the instrument using afeedback control technique, an in situ control technique, and/or afeedforward control technique. In addition, the method may includecontrolling an instrument coupled to the measurement device to alter aparameter of the instrument in response to one or more output signalsfrom the measurement device. For example, the method may includecontrolling an instrument coupled to the measurement device to alter asampling frequency of the measurement device in response to one or moreoutput signals from the measurement device.

[0458] In an additional example, the method may include controlling themeasurement device to obtain a signature characteristic of an etchprocess. The signature may include at least one singularityrepresentative of an endpoint of the etch process. An endpoint of anetch process may include, but is not limited to, a predeterminedthickness of a layer on the specimen. The predetermined thickness may belarger or smaller depending upon, for example, a semiconductor devicebeing fabricated on the specimen. Subsequent to obtaining thesingularity representative of the endpoint, the method may includecontrolling a parameter of one or more instruments coupled to the etchtool to alter a parameter of the instruments to reduce, and even end,the etch process.

[0459] An additional embodiment relates to a method for fabricating asemiconductor device, which may include disposing a specimen upon astage. The stage may be disposed within a process chamber of an etchtool, as shown in FIG. 24. The stage may be configured to support thespecimen during an etch process. A measurement device may also becoupled to the process chamber of the etch tool, as shown in FIG. 24. Inthis manner, the stage may be coupled to the measurement device.

[0460] The method may further include forming a portion of asemiconductor device upon the specimen. For example, forming a portionof a semiconductor device may include etching exposed regions of thespecimen. During an etch process, typically, an entire specimen may beexposed to an etch chemistry. A masking material may be arranged on thespecimen prior to the etch process to expose predetermined regions ofthe specimen to the etch chemistry. For example, portions of the maskingmaterial may be removed using a lithography process and/or an etchprocess to expose predetermined regions of the specimen. The exposedpredetermined regions may be regions of the specimen in which featuresof a semiconductor device may be formed. Remaining portions of themasking material may substantially inhibit underlying regions of thespecimen to be etched during the etch process. Appropriate maskingmaterials may include, but are not limited to, a resist, a dielectricmaterial such as silicon oxide, silicon nitride, and titanium nitride, aconductive material such polycrystalline silicon, cobalt silicide, andtitanium silicide, or any combination thereof.

[0461] The method for fabricating a semiconductor device may alsoinclude directing an incident beam of light to a region of the specimen.The incident beam of light may have a known polarization state. Theregion of the specimen may be a region of the specimen being removedduring the etch process. The method may also include detecting at leasta portion of the light returned from the illuminated region of thespecimen during the etch process. The method may further includegenerating a signal responsive to the detected light. In addition, themethod may include determining a change in a polarization state of theincident beam of light returned from the specimen. The change in thepolarization state of the incident beam of light returned from thespecimen may vary depending on, for example, one or more characteristicsof the specimen. In this manner, the method may include determining oneor more characteristics of a layer on the specimen using the one or moreoutput signals. The characteristics may include, but are not limited to,a thickness, an index of refraction, and an extinction coefficient ofthe layer on the specimen, a critical dimension of a feature on thespecimen, or any combination thereof.

[0462] In additional embodiments, the method for fabricating asemiconductor device may include steps of any of the embodiments asdescribed herein. For example, the method may include altering aparameter of one or more instruments coupled to the etch tool inresponse to one or more output signals from the measurement device. Inthis manner, the method may include altering a parameter of one or moreinstruments coupled to the etch tool using a feedback control technique,an in situ control technique, and/or a feedforward control technique. Inaddition, the method may include altering a parameter of one or moreinstruments coupled to the measurement device in response to one or moreoutput signals from the measurement device. For example, the method mayinclude altering a sampling frequency of the measurement device inresponse to one or more output signals from the measurement device.

[0463] Furthermore, the method may include obtaining a signaturecharacteristic of an etch process. The signature may include at leastone singularity representative of an endpoint of the etch process. Anendpoint of an etch process may be a predetermined thickness of a layeron the specimen. In addition, the predetermined thickness may be largeror smaller depending upon, for example, the semiconductor device beingfabricated on the specimen. Subsequent to obtaining the singularityrepresentative of the endpoint, the method may include altering aparameter of one or more instruments coupled to the etch tool to reduce,and even terminate, the etch process.

[0464]FIG. 25 illustrates an embodiment of a system configured toevaluate an ion implantation process. In an embodiment, a systemconfigured to evaluate an ion implantation process may includemeasurement device 308 coupled to ion implanter 310. Measurement device308 may be coupled to ion implanter 310 such that measurement device 308may be external to the ion implanter. As such, exposure of themeasurement device to chemical and physical conditions within the ionimplanter may be reduced, and even eliminated. Furthermore, measurementdevice 308 may be externally coupled to ion implanter 310 such that themeasurement device does not alter the operation, performance, or controlof the ion implantation process. For example, an ion implanter processchamber may include relatively small sections of a substantiallytransparent material 312 disposed within walls of the process chamber. Aconfiguration of an ion implanter, however, may determine an appropriatemethod to couple the measurement device to the ion implanter. Forexample, the placement and dimensions of the substantially transparentmaterial sections 312 within walls of the process chamber may varydepending on the configuration of the components within the processchamber. Examples of ion implanters are illustrated in U.S. Pat. No.5,78,589 to Aitken, U.S. Pat. No. 4,587,432 to Aitken, U.S. Pat. No.4,733,091 to Robinson et al., U.S. Pat. No. 4,743,767 to Plumb et al.,U.S. Pat. No. 5,047,648 to Fishkin et al., U.S. Pat. No. 5,641,969 toCooke et al., U.S. Pat. No. 5,886,355 to Bright et al., U.S. Pat. No.5,920,076 to Burgin et al., U.S. Pat. No. 6,060,715 to England et al.,6,093,625 to Wagner et al., 6,101,971 to Denholm et al., and areincorporated by reference as if fully set forth herein.

[0465] In an alternative embodiment, measurement device 308 may bedisposed in a measurement chamber, as described with respect to andshown in FIG. 16. The measurement chamber may be coupled to ionimplanter 310, as shown in FIG. 17. For example, the measurement chambermay be disposed laterally or vertically proximate one or more processchambers of ion implanter 310. In this manner, a robotic wafer handlerof ion implanter 310, stage 316, or another suitable mechanical devicemay be configured to move specimen 314 to and from the measurementchamber and process chambers of the ion implanter. In addition, therobotic wafer handler, the stage, or another suitable mechanical devicemay be configured to move specimen 314 between process chambers of theion implanter and the measurement chamber. Measurement device 308 may befurther coupled to ion implanter 310 as further described with respectto FIG. 17.

[0466] Measurement device 308 may be configured to periodically directan incident beam of light to specimen 314 such that a region of thespecimen may be periodically excited prior to, during, and/or subsequentto ion implantation. Measurement device 308 may also be configured todirect a sample beam of light to the periodically excited region ofspecimen 314 prior to, during, and/or subsequent to ion implantation. Inaddition, measurement device 308 may be configured to measure anintensity of the sample beam reflected from the periodically excitedregion of specimen 314 prior to, during, and/or subsequent to ionimplantation. The small sections of substantially transparent material312 may transmit the incident and sample beams from one or moreillumination systems outside the process chamber to a specimen withinthe process chamber and the reflected sample beam from the specimen to adetection system outside the process chamber. The substantiallytransparent material 312 may have optical and/or material propertiessuch that the beams may pass through the substantially transparentsections of the process chamber without undesirably altering the opticalproperties of the incident, sample, and reflected beam. In this manner,measurement device 308 may be coupled to stage 316 disposed within theprocess chamber and configured to support specimen 314.

[0467] In an embodiment, measurement device 308 may include light source318 such as an argon laser configured to emit an incident beam of light.The light source may also be configured to generate electromagneticradiation of other and/or multiple wavelengths including X-rays, gammarays, infrared light, ultraviolet light, visible light, microwaves, orradio-frequencies. Light source 318 may also include any energy sourcethat may cause a localized heated area on a surface of specimen 314 suchas a beam of electrons, protons, neutrons, ions, or molecules. Such anenergy source may be disposed within the process chamber of ionimplanter 310. In addition, light source 318 may also include any energysource configured to cause at least some electrons of the specimen in avalence band to be excited across the band gap to a conductor bandthereby creating a plurality of electron-hole pairs called a plasma.Measurement device 308 may also include modulator 320, which may beconfigured to chop the incident beam emitted from light source 318. Themodulated incident light beam may be directed to specimen 314 toperiodically excite a region of the specimen.

[0468] Measurement device 308 may also include additional light source322 such as a helium neon laser configured to emit a sample beam oflight. The measurement device may further include additional opticalcomponents such as dichroic mirror 324, polarizing beamsplitter 326,quarter wave plate 328, and focusing lens 330 such as a microscopicobjective. The additional optical components may be arranged within themeasurement device such that the modulated incident beam and the samplebeam may be directed to substantially the same region of the specimen.The additional optical components, however, may also be arranged withinthe measurement device such that the modulated incident beam and thesample beam may be directed to two overlapping but non-coaxial, or twolaterally spaced, regions of the specimen.

[0469] Measurement device 308 may also include a tracker (not shown)coupled to each of the light sources. The trackers may be configured tocontrol a position of the incident beam and the sample beam. Forexample, the trackers may be configured to alter a position of theincident beam with respect to a position of the sample beam during anion implantation process. In addition, the trackers may be configured tocontrol positions of the incident beam and the sample beam such that thebeams may be directed to substantially different regions of the specimenduring an ion implantation process. As such, the system may beconfigured to evaluate the ion implantation process at any number ofpositions on the specimen. The additional optical components may also bearranged within the measurement device such that the sample beamreflected from the surface of the specimen may be directed to adetection system of the measurement device.

[0470] In an embodiment, detection system 332 may include a conventionalphotodetector that may be configured to measure intensity variations ofthe reflected sample beam. The intensity variations of the reflectedsample beam may vary depending on, for example, periodic reflectivitychanges in the periodically excited region of specimen 314. Inalternative embodiments, detection system 332 may include a conventionalinterferometer. In this manner, the reflected sample beam may becombined with a reference beam prior to striking the interferometer. Thereference beam may be a portion of the sample beam and may be directedto the interferometer by partially transmissive mirror 326. Since thesample beam reflected from the specimen and the reference beam may notbe in phase, interference patterns may develop in the combined beam.Intensity variations of the interference patterns may be detected by theinterferometer.

[0471] In additional embodiments, detection system 332 may include asplit or bi-cell photodetector having a number of quadrants. Eachquadrant of the photodetector may be configured to independently measurean intensity of the reflected sample beam. In this manner, each quadrantmay detect different intensities as the reflected sample beam fluctuatesacross the surface of the photodetector. As such, the splitphotodetector may be configured to measure the extent of deflection ofthe reflected sample beam. For deflection measurements, the modulatedincident beam and the sample beam may be directed to two overlapping butnon-coaxial regions of the specimen as described above. Examples ofmodulated optical reflectance measurement devices are illustrated inU.S. Pat. No. 5,79,463 to Rosencwaig et al., U.S. Pat. No. 4,750,822 toRosencwaig et al., U.S. Pat. No. 4,854,710 to Opsal et al., and U.S.Pat. No. 5,978,074 to Opsal et al. and are incorporated by reference asif fully set forth herein. The embodiments described herein may alsoinclude features of the systems and methods illustrated in thesepatents. In addition, each of the detectors described above may beconfigured to generate one or more output signals responsive to theintensity variations of the reflected sample beam.

[0472] The intensity variations of the reflected sample beam may bealtered by the implantation of ions into the specimen. For example,during ion implantation processes, and especially in processes usinghigh dosage levels, a portion of the specimen may be damaged due to theimplantation of ions into the specimen. A damaged portion of thespecimen may, typically, include an upper crystalline damaged layer andan intermediate layer of amorphous silicon. A lattice structure of theupper crystalline damaged layer may be substantially different than alattice structure of the intermediate layer of amorphous silicon. Theupper crystalline layer and the amorphous layer of silicon may,therefore, act as thermal and optical boundaries. For example, the twolayers may have different periodic excitations due to differences inlattice structure. In addition, the different periodic excitations maycause the two layers to reflect the sample beam in a different manner.As such, the intensity variations of the reflected sample beam maydepend on a thickness and a lattice structure of the upper crystallinelayer and the amorphous layer.

[0473] The thickness of the upper crystalline layer and the amorphouslayer may depend on a parameter of one or more instrument coupled to theion implanter. A parameter of one or more instruments coupled to the ionimplanter may determine the process conditions of an ion implantationprocess. Instruments coupled to ion implanter may include, but are notlimited to, gas supply 334, energy source 336, pressure valve 338, andmodulator 340. Damage in the upper crystalline layer may vary dependingon, for example, electronic collisions between atoms of the siliconlayer and the implanted ions. Displacement damage, however, may not beproduced if the ions entering the silicon layer do not have enoughenergy per nuclear collision to displace silicon atoms from theirlattice sites. In this manner, a thickness of the upper crystallinelayer may vary depending upon, for example, implant energy. Increasingthe dose of ions, and in particular heavy ions, may produce an amorphousregion below the upper crystalline damaged layer in which the displacedatoms per unit volume may approach the atomic density of thesemiconductor. As the implant dose of an ion implantation processincreases, a thickness of the amorphous layer may also increase. In thismanner, the intensity variations of the reflected sample beam may bedependent upon process conditions during implantation including, but notlimited to, the implant energy and dose. Therefore, processor 342coupled to measurement device 308 may be configured to determine aparameter of an instrument coupled to ion implanter 310 from themeasured intensity variations of the reflected sample beam prior to,during, and/or subsequent to ion implantation. Parameters of one or moreinstruments coupled to the ion implanter may define process conditionsincluding, but not limited to, an implant energy, an implant dose, animplant species, an angle of implantation, and temperature.

[0474] In an embodiment, processor 342 coupled to measurement device 308may be configured to determine one or more characteristics of animplanted region of specimen 314 from one or more output signals fromdetection system 332 prior to, during, and/or subsequent to ionimplantation. The characteristics of an implanted region may include,but are limited to, a presence of implanted ions in the specimen, aconcentration of implanted ions in the specimen, a depth of implantedions in the specimen, a distribution profile of implanted ions in thespecimen, or any combination thereof. Subsequent to implantation, thespecimen may be annealed to electrically activate implanted regions ofthe specimen. Characteristics of an electrically activated implantedregion such as depth and distribution profile may depend uponthicknesses of the upper crystalline layer and the amorphous layerformed during implantation and process conditions of the anneal process.As such, characteristics of an electrically activated implanted regionmay be determined from the determined characteristics of the implantedregion. In addition, processor 342 coupled to measurement device 308 maybe configured to determine a presence of defects such as foreignmaterial on the specimen prior to, during, and/or subsequent to animplantation process from one or more output signals from detectionsystem 332.

[0475] In an additional embodiment, processor 342 may be coupled tomeasurement device 308 and ion implanter 310. The processor may beconfigured to interface with the measurement device and the ionimplanter. For example, the processor may receive output signals fromthe ion implanter during an ion implantation process that may berepresentative of a parameter of one or more instrument coupled to theion implanter. The processor may also be configured to receive outputsignals from the detection system during an ion implantation process. Inan additional embodiment, the measurement device may be configured tomeasure variations in output signals from the detection system during anion implantation process. For example, the measurement device may beconfigured to detect the reflected sample beam substantiallycontinuously or at predetermined time intervals during implantation. Theprocessor may, therefore, be configured to receive output signalsresponsive to the detected light substantially continuously or atpredetermined time intervals and to monitor variations in the one ormore output signals during the ion implantation process. In this manner,processor 342 may be configured to determine a relationship between theoutput signals responsive to the detected light and parameters of one ormore instruments coupled to an ion implanter. As such, processor 342 maybe configured to alter a parameter of one or more instruments inresponse to the determined relationship. In addition, processor 342 maybe configured to determine a parameter of one or more instruments usingthe relationship and output signals from the measurement device.

[0476] Furthermore, additional controller computer 344 may be coupled toion implanter 310. Controller computer 344 may be configured to alter aparameter of one or more instruments coupled to the ion implanter.Processor 342 may also be coupled to controller computer 344. In thismanner, controller computer 344 may be configured to alter a parameterof one or more instruments coupled to the ion implanter in response toone or more output signals from processor 342, which may be responsiveto a determined parameter. In addition, controller computer 344 maymonitor a parameter of one or more instruments coupled to the ionimplanter and may send one or more output signals responsive to themonitored parameters to processor 342.

[0477] Additionally, the processor may be further configured to controlthe measurement device and the ion implanter. For example, the processormay be configured to alter a parameter of one or more instrumentscoupled to the ion implanter in response to one or more output signalsfrom the measurement device. In this manner, the processor may beconfigured to alter a parameter of an instrument coupled to the ionimplanter using a feedback control technique, an in situ controltechnique, and/or a feedforward control technique. In addition, theprocessor may be configured to alter a parameter of an instrumentcoupled to the measurement device in response to output signals from themeasurement device. For example, the processing device may be configuredto alter a sampling frequency of the measurement device in response tooutput signals from the measurement device.

[0478] By analyzing the variations in output signals from themeasurement device during an ion implantation process, the processor mayalso generate a signature that may be representative of the implantationof the ions into the specimen. The signature may include at least onesingularity that may be characteristic of an endpoint of the ionimplantation process. For example, an appropriate endpoint for an ionimplantation process may be a predetermined concentration of ions in thespecimen. In addition, the predetermined concentration of ions may belarger or smaller depending upon a semiconductor device being fabricatedon the specimen. After the processor has detected the singularity of thesignature, the processor may reduce, and even terminate, theimplantation of ions into the specimen by altering a parameter of one ormore instruments coupled to the ion implanter.

[0479] In an embodiment, the processor may be configured to determineappropriate process conditions for subsequent ion implantation processesof additional specimens using output signals from the measurementdevice. For example, a depth of implanted ions in the specimen may bedetermined using the output signals. The determined depth of animplanted region of the specimen may be less than a predetermined depth.The predetermined depth may vary depending on a semiconductor devicebeing fabricated on the specimen. Before processing additionalspecimens, a parameter of one or more instruments coupled to the ionimplanter may be altered such that an implanted depth of the additionalspecimens may be closer to the predetermined depth than the implanteddepth of the measured specimen. For example, the implant energy of theion implant process may be increased to drive the ions deeper into theadditional specimens. In this manner, the processor may be coupled toalter a parameter of one or more instruments coupled to an ion implanterin response to output signals from the measurement device using afeedback control technique.

[0480] In an additional embodiment, the processor may be configured todetermine process conditions of additional semiconductor fabricationprocesses that may be performed subsequent to the ion implantationprocess using output signals from the measurement device. Additionalsemiconductor fabrication process may include, but are not limited to, aprocess to anneal implanted regions of the specimen. For example, adepth of an implanted region of a specimen may be determined using theoutput signals. The determined depth of the implanted region of thespecimen may be greater than a predetermined depth. Current processconditions of a subsequent annealing process, however, may be optimizedfor the predetermined depth. Therefore, before annealing the implantedspecimen, a process condition of the annealing process such as annealtime or anneal temperature may be altered. For example, an anneal timemay be increased to ensure substantially complete recrystallization ofthe amorphous layer formed in the specimen. In this manner, theprocessor may be configured to alter a parameter of one or moreinstruments coupled to an anneal tool in response to output signals fromthe measurement device using a feedforward control technique. Inaddition, the processor may be further configured according to any ofthe embodiments as described herein.

[0481] In an embodiment, a method for determining a characteristic of aspecimen prior to, during, and/or subsequent to an ion implantationprocess may include disposing the specimen upon a stage. The stage maybe disposed within a process chamber of an ion implanter. The stage mayalso be configured according to any of the embodiments as describedherein. A measurement device may be coupled to the ion implanter asdescribed herein. As such, the stage may be coupled to the measurementdevice. In addition, the measurement device may be configured asdescribed herein.

[0482] The method may include directing an incident beam of light to aregion of the specimen to periodically excite a region of the specimenduring the ion implantation process. The region of the specimen may be aregion of the specimen being implanted during the ion implantationprocess. The method may also include directing a sample beam of light tothe periodically excited region of the specimen during the ionimplantation process. In addition, the method may include detecting atleast a portion of the sample beam reflected from the periodicallyexcited region of the specimen during the ion implantation process. Themethod may further include generating one or more output signals inresponse to the detected light. Furthermore, the method may includedetermining one or more characteristics of the implanted region of thespecimen using the one or more output signals. The characteristics ofthe implanted region may include, but are not limited to, a presence ofimplanted ions in the specimen, a concentration of implanted ions in thespecimen, a depth of implanted ions in the specimen, a distributionprofile of implanted ions in the specimen, or any combination thereof.

[0483] In additional embodiments, the method for determining acharacteristic of a specimen during an ion implantation process mayinclude steps of any of the embodiments described herein. For example,the method may include altering a parameter of one or more instrumentscoupled to the ion implanter in response to the one or more outputsignals. In this manner, the method may include altering a parameter ofone or more instrument coupled to the ion implanter using a feedbackcontrol technique, an in situ control technique, and/or a feedforwardcontrol technique. In addition, the method may include altering aparameter of one or more instruments coupled to the measurement devicein response to the one or more output signals. For example, the methodmay include altering a sampling frequency of the measurement device inresponse to the one or more output signals.

[0484] The method may further include obtaining a signaturecharacterizing the implantation of the ions into a specimen. Thesignature may include at least one singularity representative of anendpoint of the ion implantation process. For example, an endpoint foran ion implantation process may be a predetermined concentration ofions. In addition, the predetermined concentration of ions may be largeror smaller depending upon a semiconductor device being fabricated on thespecimen. Subsequent to obtaining the singularity representative of theendpoint, the method may include altering a parameter of one or moreinstruments coupled to the ion implanter to reduce, and even terminate,the ion implantation process.

[0485] In an embodiment, a computer-implemented method may be used tocontrol a system configured to determine a characteristic of a specimenprior to, during, and/or subsequent to an ion implantation process. Thesystem may include a measurement device coupled to an ion implanter asdescribed herein. The method may include controlling the measurementdevice to measure modulated optical reflectance of a region of aspecimen during the ion implantation process. For example, controllingthe measurement device may include controlling a light source to directan incident beam of light to a region of the specimen such that theregion may be periodically excited during the ion implantation process.Controlling the measurement device may also include controlling anadditional light source to direct a sample beam of light to theperiodically excited region of the specimen during the ion implantationprocess.

[0486] In addition, controlling the measurement device may includecontrolling a detection system to detect at least a portion of thesample beam reflected from the periodically excited region of thespecimen during the ion implantation process. In addition, the methodmay include generating one or more output signals in response to thedetected light. Furthermore, the method may include processing the oneor more output signals to determine one or more characteristics of theimplanted region of the specimen. The characteristics of the implantedregion may include, but are not limited to, a presence of implanted ionsin the specimen, a concentration of implanted ions in the specimen, adepth of implanted ions in the specimen, a distribution profile ofimplanted ions in the specimen, or any combination thereof.

[0487] In additional embodiments, the computer-implemented method forcontrolling a system to determine a characteristic of a specimen priorto, during, and/or subsequent to an ion implantation process may includesteps of any of the embodiments described herein. For example, themethod may include controlling an instrument coupled to the ionimplanter to alter a parameter of the instrument in response to the oneor more output signals. In this manner, the method may includecontrolling an instrument coupled to the ion implanter to alter aparameter of the instrument using a feedback control technique, an insitu control technique, and/or a feedforward control technique. Inaddition, the method may include controlling an instrument coupled tothe measurement device to alter the parameter in response to the one ormore output signals. For example, the method may include controlling aninstrument coupled to the measurement device to alter a samplingfrequency of the measurement device in response to the one or moreoutput signals. Furthermore, the method may include controllingadditional components of the system. For example, the method may includecontrolling the trackers to control lateral positions of the incidentbeam and the sample beam with respect to the specimen during use. Inthis manner, the method may include controlling the trackers to evaluatethe ion implantation process at any number of positions on the specimen.

[0488] In an additional example, the method may include controlling themeasurement device to obtain a signature characterizing the implantationof the ions into the specimen. The signature may include at least onesingularity representative of an endpoint of the ion implantationprocess. For example, an endpoint for an ion implantation process may bea predetermined concentration of ions. The predetermined concentrationof ions may be larger or smaller depending upon, for example, asemiconductor device being fabricated on the specimen. Subsequent toobtaining the singularity representative of the endpoint, the method mayinclude controlling a parameter of an instrument coupled to the ionimplanter to alter the parameter of the instrument thereby reducing, andeven terminating, implantation of ions into the specimen.

[0489] An additional embodiment relates to a method for fabricating asemiconductor device that may include disposing a specimen upon a stage.The stage may be disposed within a process chamber of an ion implanter.The stage may be configured as described herein. A measurement devicemay also be coupled to the process chamber of the ion implanter. In thismanner, the stage may also be coupled to the measurement device. Themethod may include forming a portion of the semiconductor device uponthe specimen. For example, forming the portion of the semiconductordevice may include implanting ions into the specimen. During an ionimplantation process, typically, the entire wafer may be scanned with abeam of ions. A masking material may be arranged on the specimen toexpose predetermined regions of the specimen to implantation. Forexample, portions of the masking material may be removed using alithography process and/or an etch process to expose regions of thespecimen to an implantation process. The exposed regions may includeregions of the specimen in which features of a semiconductor device areto be formed. Appropriate masking materials may include, but are notlimited to, a resist, a dielectric material such as silicon oxide,silicon nitride, and titanium nitride, a conductive material such aspolycrystalline silicon, cobalt silicide, and titanium silicide, or anycombination thereof.

[0490] The method for fabricating a semiconductor device may alsoinclude directing an incident beam of light to a region of the specimen.The directed incident beam of light may periodically excite a region ofthe specimen during the ion implantation process. The region of thespecimen may be a region of the specimen implanted during the ionimplantation process. The method may also include directing a samplebeam of light to the periodically excited region of the specimen duringthe ion implantation process. In addition, the method may includedetecting at least a portion of the sample beam reflected from theperiodically excited region of the specimen during the ion implantationprocess. The method may also include generating one or more outputsignals in response to the detected light. Furthermore, the method mayinclude determining one or more characteristics of the implanted regionof the specimen using the one or more output signals. Thecharacteristics of the implanted region may include, but are not limitedto, a presence of implanted ions in the specimen, a concentration, adepth, and a distribution profile of implanted ions in the specimen, orany combination thereof.

[0491] In additional embodiments, the method for fabricating asemiconductor device may include steps of any of the embodimentsdescribed herein. For example, the method may include altering aparameter of an instrument coupled to the ion implanter in response tothe one or more output signals. In this manner, the method may includealtering a parameter of an instrument coupled to the ion implanter usinga feedback control technique, an in situ control technique, and/or afeedforward control technique. In addition, the method may includealtering a parameter of an instrument coupled to the measurement devicein response to the one or more output signals. For example, the methodmay include altering a sampling frequency of the measurement device inresponse to the one or more output signals.

[0492] Furthermore, the method may include obtaining a signaturecharacteristic of the implantation of the ions into the specimen. Thesignature may include at least one singularity representative of anendpoint of the ion implantation process. For example, an endpoint foran ion implantation process may be a predetermined concentration ofions. In addition, the predetermined concentration of ions may be largeror smaller depending upon a semiconductor device being fabricated on thespecimen. Subsequent to obtaining the singularity representative of theendpoint, the method may include altering a parameter of an instrumentcoupled to the ion implanter to reduce, and even terminate, theimplantation of ions into the specimen.

[0493]FIG. 26 illustrates an embodiment of a system configured todetermine at least one characteristic of micro defects on a surface of aspecimen. In an embodiment, such a system may include measurement device346 coupled to process tool 348. Process tool 348 may be configured as aprocess chamber of a semiconductor fabrication process tool or asemiconductor fabrication process tool. In this manner, process tool 348may be configured to perform a step of a semiconductor fabricationprocess such as lithography, etch, ion implantation, chemical-mechanicalpolishing, plating, chemical vapor deposition, physical vapordeposition, and cleaning. For example, as shown in FIG. 26, process tool348 may include a resist apply chamber of a process tool or a developchamber of a process tool. As such, process tool 348 may be configuredto fabricate a portion of a semiconductor device on specimen.

[0494] Measurement device 346 may be coupled to process tool 348 suchthat the measurement device may be external to the process tool. Assuch, exposure of the measurement device to chemical and physicalconditions within the process tool may be reduced, and even eliminated.Furthermore, the measurement device may be externally coupled to theprocess tool such that the measurement device may not alter theoperation, performance, or control of the process. For example, aprocess tool may include one or more relatively small sections of asubstantially transparent material 350 disposed within walls of theprocess tool. The configuration of process tool 348, however, maydetermine an appropriate method to couple measurement device 346 to theprocess tool. For example, the placement and dimensions of thesubstantially transparent material sections 350 within the walls of theprocess tool may be depend on the configuration of the components withinthe process tool.

[0495] In an alternative embodiment, measurement device 346 may bedisposed in a measurement chamber, as described with respect to andshown in FIG. 16. The measurement chamber may be coupled to process tool348, as shown in FIG. 17. For example, the measurement chamber may bedisposed laterally or vertically proximate one or more process chambersof process tool 348. In this manner, a robotic wafer handler of processtool 348, stage 354, or another suitable mechanical device may beconfigured to move specimen 352 to and from the measurement chamber andprocess chambers of the process tool. In addition, the robotic waferhandler, the stage, or another suitable mechanical device may beconfigured to move specimen 352 between process chambers of the processtool and the measurement chamber. Measurement device 346 may be furthercoupled to process tool 348 as further described with respect to FIG.17.

[0496] In an embodiment, stage 354 may be disposed within process tool348. Stage 354 may be configured to support specimen 352 during aprocess. In addition, stage 354 may also be configured according to anyof the embodiments described herein. For example, the stage may includea motorized stage that may be configured to rotate in a directionindicated by vector 356. Illumination system 358 of measurement device346 may be configured to direct light toward a surface of specimen 352.In addition, illumination system 358 may be configured to direct lighttoward a surface of the specimen during a process such as fabrication ofa portion of a semiconductor device and during rotation of the stage. Inaddition, a detection system of measurement device 346 may include afirst detector 360 and a second detector 362. Detectors 360 and 362 maybe configured to detect light propagating from the surface of thespecimen during a process such as fabrication of a portion of thesemiconductor device and during rotation of the stage.

[0497] As shown in FIG. 26, first detector 360 may be configured todetect dark field light propagating along a dark field path from thesurface of specimen 352. In addition, second detector 362 may beconfigured to detect bright field light propagating along a bright fieldpath from the surface of specimen 352. In this manner, light detected bythe measurement device may include dark field light propagating along adark field path from the surface of the specimen and bright field lightpropagating along a bright field path from the surface of the specimen.In addition, the detectors may be configured to substantiallysimultaneously detect light propagating from a surface of the specimen.

[0498] Furthermore, detected light may include dark field lightpropagating along multiple dark field paths from the surface of thespecimen. For example, as shown in FIG. 27, a detection system ofmeasurement device 365 may include a plurality of detectors 366. Theplurality of detectors may be positioned with respect to light source368 such that each of the plurality of detectors may detect dark fieldlight propagating from the surface of the specimen. In addition, theplurality of detectors may be arranged at a different radial andvertical positions with respect to light source 368. A system thatincludes measurement device 365 may be commonly referred to as a“pixel-based” inspection system. Examples of pixel-based inspectionsystems are illustrated in U.S. Pat. No. 5,887,085 to Otsuka, and U.S.Pat. No. 6,081,325 to Leslie et al., and PCT Application No. WO 00/02037to Smilansky et al., and are incorporated by reference as if fully setforth herein. An example of an optical inspection method and apparatusutilizing a variable angle design is illustrated in PCT Application No.WO 00/77500 A1 to Golberg et al., and is incorporated by reference as iffully set forth herein.

[0499] As shown in FIG. 27, measurement device 365 may be furtherconfigured to direct light to multiple surfaces of specimen 370, whichmay be disposed upon a stage (not shown). The stage may be configured tomove laterally and/or rotatably with respect to measurement device 365as described herein. For example, the stage may be configured to movelaterally while light from light source 368 may be configured to scanacross the specimen in a direction substantially parallel to a radius ofthe specimen. Alternatively, the stage may be configured to move in twolinear directions, which may be substantially orthogonal to one another,and optical components of measurement device 365 may be substantiallystationary. The configuration of the stage with relation to the opticalcomponents of the measurement device may vary, however, depending upon,for example, space and mechanical constraints within the system. Lightsource 368 of measurement device may include any of the light sources asdescribed herein. In addition, fiber optic cable 372 or another suitablelight cable may be coupled to light source 368 and illumination system374 positioned below specimen 370. In this manner, the measurementdevice may be configured to direct light to multiple surfaces of aspecimen. In an alternative embodiment, measurement device 365 mayinclude at least two light sources. Each of the plurality of lightsources may be configured to direct light to a different surface of thespecimen.

[0500] Measurement device 365 may also include detector 376 coupled toillumination system 374. As shown in FIG. 27, detector 376 may bepositioned with respect to illumination system 374 such that thedetector may detect dark field light propagating along a dark fieldpath. In an alternative embodiment, however, detector 376 may bepositioned with respect to illumination 374 such that the detector maydetect bright field light propagating along a bright field path.Measurement device 346 and measurement device 365 may be furtherconfigured as according to any of the embodiments described herein.

[0501] The measurement device may be further configured according to anyof the embodiments described herein. In addition, the system may includean additional measurement device. The additional measurement device mayinclude any of the measurement device as described herein.

[0502] In an embodiment, processor 364 coupled to measurement device 346may be configured to determine one or more characteristics of defects ona surface of specimen 352, as shown in FIG. 26. In addition, processor378 coupled to measurement device 365 may be configured to determine oneor more characteristics of defects on one or more surfaces of specimen370. Processor 364 and processor 378 may be similarly configured. Forexample, processors 364 and 378 may be configured to receive one or moreoutput signals from detectors 360 and 362 or 366 and 376, respectively,in response to light detected by the detectors. In addition, bothprocessors may be configured to determine at least one characteristic ofdefects on at least one surface of a specimen. The defects may includemacro defects and/or micro defects. For example, processor 264 andprocessor 378 may be configured to determine at least onecharacteristics of macro defects on a front side and a back side of aspecimen. In addition, one or more characteristics of defects mayinclude, but are not limited to, a presence of defects on a surface ofspecimen, a type of defects on a surface of a specimen, a number ofdefects on a surface of a specimen, and a location of defects on asurface of a specimen. In addition, processor 364 and processor 378 maybe configured one or more characteristics of defects substantiallysimultaneously or sequentially. In this manner, further description ofprocessor 364 may be applied equally to processor 378.

[0503] In an additional embodiment, processor 364 may be coupled tomeasurement device 346 and process tool 348. The process tool mayinclude, for example, a wafer cleaning tool such as a wet or drycleaning tool, a laser cleaning tool, or a shock wave particle removaltool. An example of a laser cleaning tool is illustrated in “ChemicallyAssisted Laser Removal of Photoresist and Particles from SemiconductorWafers,” by Genut et al. of Oramir Semiconductor Equipment Ltd., Israel,presented at the 28^(th) Annual Meeting of the Fine Particle Society,Apr. 1-3, 1998, which are incorporated by reference as if fully setforth herein. An example of a shock wave particle removal method andapparatus is illustrated in U.S. Pat. No. 5,023,424 to Vaught, which isincorporated by reference as if fully set forth herein. Processor 364may be configured to interface with measurement device 346 and processtool 348. For example, processor 364 may receive one or more outputsignals from process tool 348 during a process that may be responsive toa parameter of an instrument coupled to the process tool. Processor 364may also be configured to receive one or more output signals frommeasurement device 346, which may be responsive to light detected bydetector 360 and detector 362 as described herein.

[0504] In an additional embodiment, the measurement device may beconfigured to detect light returned from the specimen during a process,as described herein. For example, the measurement device may beconfigured to detect light propagating from the specimen substantiallycontinuously or at predetermined time intervals during a process. Theprocessor may, therefore, receive output signals from the measurementdevice in response to the detected light and may monitor variations inthe output signals during a process. In this manner, processor 364 maybe configured to determine a relationship between the output signals anda parameter of one or more instruments coupled to process tool 348. Assuch, processor 364 may be configured to alter a parameter of aninstrument coupled to the process tool in response to the determinedrelationship. In addition, the processor may be configured to determinea parameter of an instrument coupled to the process tool using therelationship and one or more output signals from the measurement device.

[0505] Additionally, processor 364 may be further configured to controlmeasurement device 346 and process tool 348. For example, the processormay be configured to alter a parameter of one or more instrumentscoupled to the process tool in response to output signals from themeasurement device. In this manner, the processor may be configured toalter a parameter of one or more instruments coupled to the process toolusing a feedback control technique, an in situ control technique, and/ora feedforward control technique. In addition, the processor may beconfigured to alter a parameter of an instrument coupled to themeasurement device in response to one or more output signals from themeasurement device. For example, the processor may be configured toalter a sampling frequency of the measurement device in response to theoutput signals.

[0506] By analyzing the variations in the output signals from themeasurement device during a process, the processor may also generate asignature that may be characteristic of the process. The signature mayinclude at least one singularity that may be characteristic of anendpoint of the process. For example, an endpoint for a process may be apredetermined thickness of a layer. A predetermined thickness of a layeron the specimen may be larger or smaller depending upon, for example, asemiconductor device being fabricated on the specimen. After detectingthe singularity, the processor may reduce, and even terminate,processing of the specimen by altering a parameter of one or moreinstruments coupled to the process tool.

[0507] In an embodiment, the processor may be configured to determineparameters of one or more instruments coupled to the process tool forprocessing of additional specimens using output signals from themeasurement device. For example, a thickness of a layer on the specimenmay be determined using output signals from the measurement device. Thethickness of the layer on the specimen may be greater than apredetermined thickness. The predetermined thickness may vary dependingon, for example, a semiconductor device being fabricated one thespecimen. Before processing additional specimens, a parameter of one ormore instruments coupled to the process tool may be altered such that athickness of a layer on the additional specimens may be closer to thepredetermined thickness than a thickness of the layer on the measuredspecimen. For example, the radio frequency power of an etch process maybe increased to etch a greater thickness of the layer on the specimen.In this manner, the processor may be used to alter a parameter of one ormore instruments coupled to a process tool in response to output signalsfrom the measurement device using a feedback control technique.

[0508] In an additional embodiment, the processor may be configured todetermine process conditions of additional semiconductor fabricationprocesses using output signals from the measurement device. For example,the processor may be configured to alter a parameter of an instrumentcoupled to a stripping tool in response to output signals from themeasurement device using a feedforward control technique. In addition,the processor may be further configured according to the embodimentsdescribed herein.

[0509] In an embodiment, a method for determining a characteristic of aspecimen during a process may include disposing specimen 352 upon stage354. Stage 354 may be disposed within process tool 348. The stage mayalso be configured according to any of the embodiments described herein.Measurement device 346 may be coupled to process tool 348 as describedherein. As such, stage 354 may be coupled to measurement device 346. Inaddition, measurement device 346 may be configured as described herein.The method may include directing light to a surface of the specimenduring a process. In addition, the method may include detecting lightreturned from the surface of the specimen during a process. The methodmay also include generating one or more output signals in response tothe detected light. In this manner, the method may include determining acharacteristic of the specimen being processed using the one or moreoutput signals. The characteristic may include a presence, a number, alocation, and a type of defects on at least one surface of the specimen,or any combination thereof.

[0510] In additional embodiments, the method for determining acharacteristic of a specimen during a process may include steps of anyof the embodiments described herein. For example, the method may includealtering a parameter of an instrument coupled to the process tool inresponse to the one or more output signals. In this manner, the methodmay include altering a parameter of an instrument coupled to the processtool using a feedback control technique, an in situ control technique,and/or a feedforward control technique. In addition, the method mayinclude altering a parameter of an instrument coupled to the measurementdevice in response to the one or more output signals. For example, themethod may include altering a sampling frequency of the measurementdevice in response to the one or more output signals. Furthermore, themethod may include obtaining a signature characteristic of the process.The signature may include at least one singularity representative of anendpoint of the process. Subsequent to obtaining the singularityrepresentative of the endpoint, the method may include altering aparameter of one or more instruments coupled to the process tool toreduce, and even terminate, the process.

[0511] In an embodiment, a computer-implemented method may be used tocontrol a system configured to determine a characteristic of a specimenduring a process. The system may include a measurement device coupled toa process tool as described herein. The method may include controllingthe measurement device to detect light returned from a surface of aspecimen during a process. For example, controlling the measurementdevice may include controlling a light source to direct light to asurface of the specimen during the process. In addition, controlling themeasurement device may include controlling a detector configured todetect light returned from the surface of the specimen during theprocess. The method may also include generating one or more outputsignals in response to the detected light. Furthermore, the method mayinclude processing the one or more output signals to determine at leastone characteristic of defects on at least one surface of the specimenusing the one or more output signals. The characteristics may alsoinclude any of the characteristics described herein.

[0512] In additional embodiments, the computer-implemented method forcontrolling a system to determine a characteristic of a specimen duringa process may include any steps of the embodiments described herein. Forexample, the method may include controlling one or more instrumentscoupled to the process tool to alter a parameter of the instruments inresponse to the one or more output signals. In this manner, the methodmay include controlling one or more instruments coupled to the processtool to alter a parameter of the instrument using a feedback controltechnique, an in situ control technique, and/or a feedforward controltechnique. In addition, the method may include controlling an instrumentcoupled to the measurement device to alter the parameter in response tothe one or more output signals. For example, the method may includecontrolling an instrument coupled to the measurement device to alter asampling frequency of the measurement device in response to the one ormore output signals.

[0513] In an additional example, the method may include controlling themeasurement device to obtain a signature characteristic of the process.The signature may include at least one singularity representative of anendpoint of the process. Subsequent to obtaining the singularityrepresentative of the endpoint, the method may include controlling aparameter of one or more instruments coupled to the process tool toalter a parameter of an instrument to reduce, and even stop, theprocess.

[0514] An additional embodiment relates to a method for fabricating asemiconductor device, which may include disposing a specimen upon astage. The stage may be disposed within a process tool. The stage may beconfigured as described herein. A measurement device may also be coupledto the process tool. In this manner, the stage may be coupled to themeasurement device. The method may further include forming a portion ofa semiconductor device upon the specimen. For example, forming a portionof a semiconductor device may include performing at least a step of asemiconductor fabrication process on the specimen. The method forfabricating a semiconductor device may also include directing light to asurface of the specimen. The method may further include detecting lightreturned from the surface of the specimen during the process. Inaddition, the method may include generating one or more output signalsin response to the detected light. Furthermore, the method may includedetermining at least one characteristic of the specimen from the one ormore output signals. The characteristic may include a presence, anumber, a type, or a location of defects on at least one surface of thespecimen, or any combination thereof.

[0515] In additional embodiments, the method for fabricating asemiconductor device may include any steps of the embodiments describedherein. For example, the method may include altering a parameter of oneor more instruments coupled to the process tool in response to the oneor more output signals. In this manner, the method may include alteringa parameter of one or more instruments coupled to the process tool usinga feedback control technique, an in situ control technique, and/or afeedforward control technique. In addition, the method may includealtering a parameter of one or more instruments coupled to themeasurement device in response to the one or more output signals. Forexample, the method may include altering a sampling frequency of themeasurement device in response to the one or more output signals.Furthermore, the method may include obtaining a signature characteristicof the process. The signature may include at least one singularityrepresentative of an endpoint of the process. Subsequent to obtainingthe singularity representative of the endpoint, the method may includealtering a parameter of one or more instruments coupled to the processtool to reduce, and even terminate, the process.

[0516] In an embodiment, each of the systems describe above may becoupled to an energy dispersive X-ray spectroscopy (“EDS”) device. Sucha device may be configured to direct a beam of electrons to a surface ofthe specimen. The specimen may emit secondary electrons and acharacteristic X-ray in response to the directed beam of electrons. Thesecondary electrons may be detected by a secondary electron detector andmay be converted to electrical signals. The electrical signals may beused for brightness modulation or amplitude modulation of an image ofthe specimen produced by the system. The characteristic X-ray may bedetected by a semiconductor X-ray detector and may be subjected toenergy analysis. The X-ray spectrum may be analyzed to determine acomposition of material on the specimen such as defects on a surface ofthe specimen. Examples of EDS systems and methods are illustrated inU.S. Pat. No. 5,59,450 to Robinson et al., U.S. Pat. No. 6,072,178 toMizuno, and U.S. Pat. No. 6,084,679 to Steffan et al., and areincorporated by reference as if fully set forth herein.

Further Improvements

[0517] In an embodiment, each of the systems, as described herein, maybe used to reduce, and even to minimize, within wafer (“WIW”)variability of critical metrics of a process such as a lithographyprocess. For example, critical metrics of a lithography process mayinclude a property such as, but are not limited to, critical dimensionsof features formed by the lithography process and overlaymisregistration. Critical metrics of a process, however, may alsoinclude any of the properties as described herein including, but notlimited to, a presence of defects on the specimen, a thin filmcharacteristic of the specimen, a flatness measurement of the specimen,an implant characteristic of the specimen, an adhesion characteristic ofthe specimen, a concentration of an elements in the specimen. Suchsystems, as described herein, may be configured to determine at leastone property of a specimen at more than one position on the specimen.For example, the measurement device may be configured to measure atleast the one property of the specimen at multiple positions within afield and/or at multiple positions within at least two fields on thespecimen. The measured property may be sent to a processor, or a withinwafer film processor. The processor may be coupled to the measurementdevice and may be configured as described herein.

[0518] In addition, because at least one property of the specimen may bemeasured at various positions across the specimen, at least one propertymay be determined for each of the various positions. As such, aparameter of one or more instruments coupled to a tool or a processchamber of a process tool may also be altered, as described above,independently from field to field on the specimen. For example, manyexposure process tools may be configured such that the exposure dose andfocus conditions of the expose process may be varied across thespecimen, i.e., from field to field. In this manner, process conditionssuch as exposure dose and/or post exposure bake temperature may varyacross the specimen in subsequent processes in response to variations inat least one measured property from field to field across the specimen.The exposure dose and focus conditions may be determined and/or alteredas described herein using a feedback or feedforward control technique.In this manner, critical metrics of a process such as a lithographyprocess may be substantially uniform across the specimen.

[0519] In an addition, a temperature of the post exposure bake plate maybe altered across the bake plate by using a number of discrete secondaryheating elements disposed within a primary heating element. Secondaryheating elements may be independently controlled. As such, a temperatureprofile across a specimen during a post exposure bake process may bealtered such that individual fields on a specimen may be heated atsubstantially the same temperature or at individually determinedtemperatures. A pressure of a plating head of a chemical mechanicalpolishing tool may be similarly altered across the plate head inresponse to at least the two properties determined at multiple locationson the specimen.

[0520] In addition, at least the one parameter of a process chamber maybe altered such that a first portion of a specimen may be processed witha first set of process conditions during a step of the process and suchthat a second portion of the specimen may be processed with a second setof process conditions during the step. For example, each portion of thespecimen may be a field of the specimen. In this manner, each field ofthe specimen may be subjected to a different process conditions such as,but not limited to, exposure dose and focus conditions and post exposurebake temperatures. As such, because each field of a specimen may besubjected to process conditions that may vary depending upon a measuredproperty of the specimen, within wafer variations in critical metrics ofthe process may be substantially reduced, or even minimized.

[0521] It is to be understood that all of the measurements describedabove may be used to alter a parameter of a process chamber using afeedback, a feedforward, or in situ process control technique. Inaddition, within wafer variations of critical metrics of a process suchas a lithography process may be further reduced by using a combinationof the above techniques.

[0522] A system configured to evaluate and control a process using fieldlevel analysis as described above may provide dramatic improvements overcurrent process control methods. Measuring within wafer variability ofcritical metrics, or critical dimensions, may provide tighter control ofthe critical dimension distribution. In addition to improving themanufacturing yield, therefore, the method described above may alsoenable a manufacturing process to locate the distribution performance ofmanufactured devices closer to a higher performance level. As such, thehigh margin product yield may also be improved by using such a method toevaluate and control a process. Furthermore, additional variations inthe process may also be minimized. For example, a process may use twodifferent, but substantially similarly configured process chambers, toprocess one lot of specimens. Two process chambers may be used toperform the same process such that two specimens may be processedsimultaneously in order to reduce the overall processing time.Therefore, the above method may be used to evaluate and control eachprocess chamber separately. As such, the overall process spread may alsobe reduced.

[0523] Data gathered using a system, as described herein, may beanalyzed, organized and displayed by any suitable means. For example,the data may be grouped across the specimen as a continuous function ofradius, binned by radial range, binned by stepper field, by x-y position(or range of x-y positions, such as on a grid), by nearest die, and/orother suitable methods. The variation in data may be reported bystandard deviation from a mean value, a range of values, and/or anyother suitable statistical method.

[0524] The extent of the within wafer variation (such as the range,standard deviation, and the like) may be analyzed as a function ofspecimen, lot and/or process conditions. For example, the within waferstandard deviation of the measured CD may be analyzed for variation fromlot to lot, wafer to wafer, and the like. It may also be grouped,reported and/or analyzed as a function of variation in one or moreprocess conditions, such as develop time, photolithographic exposureconditions, resist thickness, post exposure bake time and/ortemperature, pre-exposure bake time and/or temperature, and the like. Itmay also or instead be grouped, reported and/or analyzed as a functionof within wafer variation in one or more of such processing conditions.

[0525] Data gathered using a system, as described herein, may be usednot just to better control process conditions, but also where desirableto better control in situ endpointing and/or process control techniques.For example, such data may be used in conjunction with an apparatus suchas that set forth in U.S Pat. No. 5,689,614 to Gronet et al. and/orPublished European Patent Application No. EP 1 066 925 A2, which areincorporated by reference as if fully set forth herein, to improve thecontrol over localized heating of the substrate or closed loop controlalgorithms. Within wafer variation data may be fed forward or back tosuch a tool to optimize the algorithms used in control of local specimenheating or polishing, or even to optimize the tool design. In anotherexample of such localized process control, within wafer variation datamay be used to control or optimize a process or tool such as that setforth in one or more of Published PCT Patent Applications No. WO99/41434 or WO 99/25004 and/or Published European Patent Application No1065567 A2, which are hereby incorporated by reference as if fully setforth herein. Again, within wafer variation data taken, for example,from stand alone and/or integrated measurement tools, may be used tobetter control and/or optimize the algorithms, process parameters andintegrated process control apparatuses and methods in such tools orprocesses. Data regarding metal thickness and its within wafer variationmay be derived from an x-ray reflectance tool such as that disclosed inUS Patent No. 5,619,548 and/or Published PCT Application No. WO01/09566, which are hereby incorporated by reference as if fully setforth herein, by eddy current measurements, by e-beam induced x-rayanalysis, or by any other suitable method.

[0526] As shown in FIG. 9, an embodiment of system 70 may have aplurality of measurement devices. Each of the measurement devices may beconfigured as described herein. As described above, each of themeasurement devices may be configured to determine a different propertyof a specimen. As such, system 70 may be configured to determine atleast four properties of a specimen. For example, measurement device 72may be configured to determine a critical dimension of a specimen. Inaddition, measurement device 74 may be configured to determine overlaymisregistration of the specimen. In an alternative embodiment,measurement device 76 may be configured to determine a presence ofdefects such as macro defects on the specimen. In addition, measurementdevice 76 may be configured to determine a number, a location, and/or atype of defects on the specimen. Furthermore, measurement device 78 maybe configured as to determine one or more thin film characteristics ofthe specimen and/or a layer on the specimen. Examples of thin filmcharacteristics include, but are not limited to, a thickness, an indexof refraction, and an extinction coefficient. In addition, each of themeasurement devices may be configured to determine two or moreproperties of a specimen. For example, measurement device 72 may beconfigured to determine a critical dimension and a thin filmcharacteristic of a specimen substantially simultaneously orsequentially. In addition, measurement device 72 may be configured todetermine a presence of defects on the specimen. As such, system 70 maybe configured to determine at least four properties of the specimensimultaneously or sequentially.

[0527] System 70 may be arranged as a cluster tool. An example of aconfiguration of a cluster tool is illustrated in FIG. 14. For example,each of the measurement device described herein may be disposed in ameasurement chamber. Each of the measurement chamber may be disposedproximate one another and/or coupled to each other. In addition, system70 may include a wafer handler. The wafer handler may include anymechanical device as described herein. The system may be configured toreceive a plurality of specimen to be measured and/or inspected such asa cassette of wafers. The wafer handler may be configured to remove aspecimen from the cassette prior to measurement and/or inspection and todispose a specimen into the cassette subsequent to measurement and/orinspection. The wafer handler may also be configured to dispose aspecimen within each measurement chamber and to remove a specimen fromeach measurement chamber. In addition, the system may include aplurality of such wafer handlers. The system may be further configuredas described with reference to FIG. 14. In addition, the system may beconfigured as a stand-alone metrology and/or inspection system. In thismanner, the system may not be coupled to a process tool. Such a systemmay provide advantages over a similarly configured integrated tool. Forexample, such a system may be designed to be faster and cheaper than asimilarly configured integrated tool because there may be less physicaland mechanical constraints for a stand-alone system versus an integratedsystem. System 70 may be further configured as described herein.

[0528] In an embodiment, a system may be configured to determine atleast two properties of a specimen including a thickness of a layerformed on the specimen and at least one additional property such as anindex of refraction, a velocity of sound, a density, and a criticaldimension, which may include a profile, of a layer or a feature formedupon the specimen. The specimen may include a structure such as singlelayer or multiple layers formed upon the specimen. In addition, thesingle layer or multiple layers formed on the specimen may include, butare not limited to, any combination of substantially transparent,semi-transparent, and opaque metal films. The specimen may also be ablanket wafer or a patterned wafer. As used herein, the term, “blanketwafer,” generally refers to a wafer having at least an upper layer thatmay not have been subjected to a lithography process. In contrast, asused herein, the term, “patterned wafer,” generally refers to a waferhaving at least an upper layer that may be patterned by, for example, alithography process and/or an etch process.

[0529] The system may be configured as described herein. For example,the system may include a processor coupled to two or more measurementdevices. The processor may be configured to determine at least athickness of the specimen and/or a layer on the specimen and at leastone additional property of the specimen and/or a layer on the specimenfrom one or more output signals generated by the measurement devices. Inaddition, the processor may be configured to determine other propertiesof the specimen from the one or more output signals. In an embodiment,the measurement device may include, but is not limited to, a small-spotphoto-acoustic device, a grazing X-ray reflectometer, and a broadbandsmall-spot spectroscopic ellipsometer. Examples of photo-acousticdevices are illustrated in U.S. Pat. No. 4,710,030 to Tauc et al., U.S.Pat. No. 5,748,318 to Maris et al., U.S. Pat. No. 5,844,684 to Maris etal., U.S. Pat. No. 5,684,393 to Maris, U.S. Pat. No. 5,959,735 to Mariset al., U.S. Pat. No. 6,008,906 to Maris, U.S. Pat. No. 6,025,918 toMaris, U.S. Pat. No. 6,175,416 to Maris et al., U.S. Pat. No. 6,191,855to Maris, U.S. Pat. No. 6,208,418 to Maris, U.S. Pat. No. 6,208,421 toMaris et al., and U.S. Pat. No. 6,211,961 to Maris, which areincorporated by reference as if fully set forth herein. The system mayalso include a pattern recognition system that may be used inconjunction with the above devices.

[0530] In this manner, the measurement device may be configured tofunction as a single measurement device or as multiple measurementdevices. Because multiple measurement devices may be integrated into asingle measurement device of the system, at least one element of a firstmeasurement device, for example, may also be at least one element of asecond measurement device. In addition, it may be advantageous foradditional elements such a handling robots, stages, processor, and powersupplies of a first measurement device to be used by a secondmeasurement device. The system may also include an autofocus mechanismthat may be configured to bring a specimen substantially into focus(i.e., to approximately a correct height) for a first measurementdevice, and then for a second measurement device. An example of anautofocus mechanism is shown in FIG. 11b, as autofocus sensor 124. Anadditional example of an autofocusing apparatus is illustrated in U.S.Pat. No. 6,172,349 to Katz et al., which is incorporated by reference asif fully set forth herein. The system, the measurement device, and theprocessor may be further configured as described herein.

[0531] Appropriate combinations of devices included in the measurementdevice may include, for example, a small-spot photo-acoustic device anda grazing X-ray reflectometer or a small-spot photo-acoustic device anda broadband small-spot spectroscopic ellipsometer. For example, aphoto-acoustic device may provide measurements of layers havingthickness of less than about a few hundred angstroms while a grazingX-ray reflectometer may provided measurements of layers havingthicknesses in a range from about 50 angstroms to about 1000 angstroms.Ellipsometric techniques, especially broadband ellipsometry, may providemeasurements of metal and semi-metallic layers having thicknesses ofless than about 500 angstroms because at such thicknesses even metal mayallow some light to pass through the layer. In addition, ellipsometrictechniques may also provide measurements of transparent layers havingthicknesses from about 0 angstroms to a few microns. As such, a system,as described herein, may provide measurements of layers having a broadrange of thicknesses and materials.

[0532] In addition, such a system may be coupled to achemical-mechanical polishing tool as described herein. Furthermore, thesystem may be coupled to or arranged proximate a chemical-mechanicalpolishing tool such that the system may determine at least twoproperties of a specimen, a layer of a specimen, and/or a feature formedon the specimen subsequent to a chemical-mechanical polishing process.For example, a feature formed on the specimen may include a relativelywide metal line. Such a relatively wide metal line may include, forexample, a test structure formed on the specimen. In this manner, one ormore of the determined properties of the test structure may becorrelated (experimentally or theoretically) to one or more propertiesof a feature such as a device structure formed on the specimen. Inaddition, at least a portion of the specimen may include an exposeddielectric layer. Alternatively, the system may be coupled to any otherprocess tools as described herein.

[0533] An appropriate spectroscopic ellipsometer may include a broadbandlight source, which may include one or a combination of light sourcessuch as a xenon arc lamp, a quartz-halogen lamp, or a deuterium lamp.The ellipsometer may have a relatively high angle of incidence. Forexample, the angle of incidence may range from approximately 40 degreesto approximately 80 degrees, to the normal to the surface of thespecimen. The spectroscopic ellipsometer may include an array detectorsuch as a silicon photodiode array or a CCD array, which may be backthinned.

[0534] It may also be advantageous for the spectroscopic ellipsometer toinclude one or more fiber optic elements. For example, a first fiberoptic element may be configured to transmit light from the light sourceto a first polarizing element. For example, such a fiber may ensure thatthe light is randomly polarized or depolarized. The spectroscopicellipsometer may also include a second fiber optic element configured totransmit light to a spectrometer from an analyzer assembly. In thismanner, the fiber optic element may be configured to alter, or“scramble,” a polarization state of light from the analyzer assemblysuch that the signal may not need correction for the polarizationsensitivity of the spectrometer. In addition, or alternatively, thesecond fiber optic element may be configured to alter the polarizationstate of the light such that the spectrometer may be convenientlylocated at some distance from the specimen. The fiber optic element may,preferably, be made of fused silica or sapphire such that the fiberoptic element may be transmissive at ultraviolet wavelengths.

[0535] The first polarizer may include a linear polarizing element suchas a Rochon prism or a Wollaston prism and, optionally, a retarder(i.e., a compensator). The analyzer assembly may include a linearpolarizing element and, optionally, a retarder. At least one of thelinear polarizing elements may rotate continuously when makingmeasurements. For calibration, at least two elements will be rotatedeither continuously or in a series of discrete steps.

[0536] The spectroscopic ellipsometer may further include reflective orrefractive optics (or combinations thereof) configured to focus thelight to a small spot on the specimen and to collect the light from thespecimen. Any refractive components may, preferably, be made from fusedSiO₂ or CaF₂ for relatively good ultraviolet transmission. Anyreflective components may, preferably, be coated with Al for relativelygood broadband transmission. Typically, a thin overcoat of MgF₂ or SiO₂may be formed over the Al to reduce, and even eliminate, oxidation ofthe Al. The reflective components may be spherical or aspherical.Diamond turning may be a convenient and well-known technique for makingaspheric mirrors. For vacuum conditions such as conditions suitable forultraviolet light having wavelengths in a range of less than about 190nm, gold or platinum may be a suitable coating material. Thespectroscopic ellipsometer may be further configured as describedherein.

[0537] In an embodiment, a spectroscopic ellipsometer may be coupled toa lithography track. The lithography track may be configured asillustrated in FIG. 13 and as described herein. The spectroscopicellipsometer may be configured as in any of the embodiments describedherein. A processor may be coupled to the spectroscopic ellipsometer.The processor may be configured to determine at least one property ofthe specimen including, but not limited to, a critical dimension, aprofile, a thickness or other thin film characteristics of the specimen,a layer formed on the specimen, and/or a feature formed on the specimenfrom one or more output signals generated by the spectroscopicellipsometer. In addition, the spectroscopic ellipsometer may be coupledto the lithography track as described herein. For example, thespectroscopic ellipsometer may be coupled to a process chamber of thelithography track such that the spectroscopic ellipsometer may directlight toward and detect light returned from a specimen on a supportdevice in the process chamber. In addition, the spectroscopicellipsometer may be configured to direct light toward and detect lightreturned from the specimen while the support device is spinning.Furthermore, the spectroscopic ellipsometer may be configured to directlight toward and detect light returned from the specimen during aprocess being performed in the process chamber. The process may include,but is not limited to, a resist apply process, a post apply bakeprocess, and a chill process.

[0538] Alternatively, the spectroscopic ellipsometer may be disposedwithin the lithography track. For example, the spectroscopicellipsometer may be disposed above a chill chamber, in an integrationsystem, or laterally proximate or vertically proximate to a processchamber of the lithography track. An integration system may beconfigured to couple a lithography track to an exposure tool. Forexample, the integration system may be configured to receive a specimenfrom the lithography track and to send the specimen to the exposuretool. In addition, the integration system may be configured to receiveor remove a specimen from the exposure tool and to send the specimen tothe lithography track. The integration system may also include one ormore chill plates and a handling robot. In this manner, the system maybe configured to determine at least one property of the specimen atvarious points in a lithography process such as prior to an exposurestep, subsequent to the exposure step, and subsequent to a develop stepof the process.

[0539] The spectroscopic ellipsometer may or may not be disposed withina measurement chamber as described above. For example, in an alternativeembodiment, the spectroscopic ellipsometer may be coupled to a roboticwafer handler of the lithography track. In this manner, thespectroscopic ellipsometer may be configured to direct light toward anddetect light returned from the specimen prior to or subsequent to aprocess such prior to exposure, subsequent to exposure, or afterdevelop. For example, subsequent to exposure, the spectroscopicellipsometer may be configured to generate one or more output signalsresponsive to a critical dimension, a profile, a thickness or other thinfilm characteristics of a latent image formed on the specimen by theexposure process.

[0540] An environment within the track may be controlled by chemicalfiltration of atmospheric air or by feeding a supply of sufficientlypure gas. For example, the environment within the track may becontrolled such that levels of chemical species including, but notlimited to, ammonia and amine-group-containing compounds, water, carbondioxide, and oxygen may be reduced. In addition, the environment withinthe track may be controlled by a controller computer such as controllercomputer 162, as illustrated in FIG. 14 coupled to the ISP system. Thecontroller computer may be further configured to control additionalenvironmental conditions within the track including, but not limited to,relative humidity, particulate count, and temperature.

[0541] The spectroscopic ellipsometer may be configured as describedherein. For example, an appropriate spectroscopic ellipsometer mayinclude a broadband light source, which may include one or a combinationof light sources such as a xenon arc lamp, a quartz-halogen lamp, or adeuterium lamp. The ellipsometer may have a relatively high angle ofincidence. For example, the angle of incidence may range fromapproximately 40 degrees to approximately 80 degrees, to the normal tothe surface of the specimen. The spectroscopic ellipsometer may includean array detector such as a silicon photodiode array or a CCD array,which may be back thinned.

[0542] It may also be advantageous for the spectroscopic ellipsometer toinclude one or more fiber optic elements. For example, a first fiberoptic element may be configured to transmit light from the light sourceto a first polarizing element. For example, such a fiber may ensure thatthe light is randomly polarized or depolarized. The spectroscopicellipsometer may also include a second fiber optic element configured totransmit light to a spectrometer from an analyzer assembly. In thismanner, the fiber optic element may be configured to alter, or“scramble,” a polarization state of light from the analyzer assemblysuch that the signal may not need correction for the polarizationsensitivity of the spectrometer. In addition, or alternatively, thesecond fiber optic element may be configured to alter the polarizationstate of the light such that the spectrometer may be convenientlylocated at some distance from the specimen. The fiber optic element may,preferably, be made of fused silica or sapphire such that the fiberoptic element may be transmissive at ultraviolet wavelengths.

[0543] The first polarizer may include a linear polarizing element suchas a Rochon prism or a Wollaston prism and, optionally, a retarder(i.e., a compensator). The analyzer assembly may include a linearpolarizing element and, optionally, a retarder. At least one of thelinear polarizing elements may rotate continuously when makingmeasurements. For calibration, at least two elements will be rotatedeither continuously or in a series of discrete steps.

[0544] The spectroscopic ellipsometer may further include reflective orrefractive optics (or combinations thereof) configured to focus thelight to a small spot on the specimen and to collect the light from thespecimen. Any refractive components may, preferably, be made from fusedSiO₂ or CaF₂ for relatively good ultraviolet transmission. Anyreflective components may, preferably, be coated with Al for relativelygood broadband transmission. Typically, a thin overcoat of MgF₂ or SiO₂may be formed over the Al to reduce, and even eliminate, oxidation ofthe Al. The reflective components may be spherical or aspherical.Diamond turning may be a convenient and well-known technique for makingaspheric mirrors. For vacuum conditions such as conditions suitable forultraviolet light having wavelengths in a range of less than about 190nm, gold or platinum may be a suitable coating material. Thespectroscopic ellipsometer may be further configured as describedherein.

[0545] In addition, the processor may be configured to compare one ormore output signals from the spectroscopic ellipsometer with one or morepredetermined tables that may include expected output signals versuswavelength for different characteristics and, possibly, interpolateddata between the expected output signals versus wavelength.Alternatively, the processor may be configured to perform an iterationusing one or more starting guesses through (possibly approximate)equations to converge to a good fit for one or more output signals fromthe spectroscopic ellipsometer. Suitable equations may include, but arenot limited to, any non-linear regression algorithm known in the art.

[0546] Alternatively, the spectroscopic ellipsometer may be configuredto image approximately all, or an area of, a specimen onto aone-dimensional or two-dimensional detector. In this manner, multiplelocations on the specimen may be measured substantially simultaneously.In addition, the spectroscopic ellipsometer may be configured to measuremultiple wavelengths by sequentially changing wavelength with filters, amonochromator, or by dispersing the light. For example, the light may bedispersed with a prism or grating in one dimension on a two-dimensionaldetector while one dimension of the specimen is being imaged in theother dimension.

[0547] In an embodiment, a system may be configured to determine atleast two properties of a specimen including a thickness of the specimenand/or a layer formed on the specimen, a feature formed on the specimenand an additional property such as a lattice constant, residual stress,average grain size, crystallinity, crystal defects, an index ofrefraction, a velocity of sound, a density, and a critical dimension,which may include a profile, of a layer or a feature formed upon thespecimen. The specimen may include a single layer or multiple layersformed upon the specimen. In addition, the single layer or multiplelayers formed on the specimen may include, but are not limited to, anycombination of transparent, semi-transparent, and opaque metal films.The specimen may also be a blanket wafer or a patterned wafer.

[0548] The system may be configured as described herein. For example,the system may include a processor coupled to a measurement device andconfigured to determine at least a thickness of the specimen and/or alayer on the specimen and an additional property of a layer on thespecimen and/or a feature formed on the specimen from one or more outputsignals generated by the measurement device. In addition, the processormay be configured to determine other properties of the specimen from theone or more output signals. In an embodiment, the measurement device mayinclude, but is not limited to, a grazing X-ray reflectometer, an X-rayreflectometer such as a grating X-ray reflectometer, and/or an X-raydiffractometer. The measurement device may also include a patternrecognition system that may be used in conjunction with the abovedevices.

[0549] An X-ray reflectometer may be configured to perform an X-rayreflectance technique as described herein.

[0550] An X-ray diffractometer may be configured to perform X-raydiffraction. X-ray diffraction involves coherent scattering of x-rays bypolycrystalline materials. The x-rays are scattered by each set oflattice planes at a characteristic angle, and the scattered intensity isa function of the atoms which occupy those planes. X-ray diffractionpeaks may be produced by constructive interference of a monochromaticbeam scattered from each set of lattice planes at specific angles. Thepeak intensities are determined by atomic arrangement within the latticeplanes. In this manner, the scattering from all the different sets ofplanes results in a pattern, which is unique to a given compound. Inaddition, distortions in the lattice planes due to stress, solidsolution, or other effects may be measure. The scattered x-rays may bedetected and one or more output signals responsive to the intensity ofthe scattered x-rays may be generated. The one or more output signalsmay be used to obtain one or more properties of a layer on a specimen ora specimen. An advantage of X-ray diffraction is that is a substantiallynon-destructive technique. Commercially available X-ray diffractometersare available from, for example, Siemens, Madison, Wis. and Rigaku USA,Inc., The Woodlands, Tex.

[0551] In an embodiment, an X-ray diffractometer may be coupled to aprocess tool configured to grow an epitaxial layer of silicon on aspecimen such as a wafer. Epitaxy is a process in which a relativelythin crystalline layer is grown on a crystalline substrate. An epitaxiallayer of silicon, which may be commonly referred to as “epitaxy” or“epi,” may be a layer of extremely pure silicon or silicon-germaniumformed on a silicon containing substrate. The layer may be grown to forma substantially uniform crystalline structure on the wafer. In epitaxialgrowth, the substrate acts as a seed crystal, and the epitaxial filmduplicates the structure (orientation) of the crystal. Epitaxialtechniques include, but are not limited to, vapor-phase epitaxy,liquid-phase epitaxy, solid-phase epitaxy, and molecular beam epitaxy. Athickness of the epitaxial layer during an epitaxy process (i.e., agrowth rate) may vary over time depending upon, for example, chemicalsource, deposition temperature, and mole fraction of the reactants.Examples of appropriate chemical sources include, but are not limitedto, silicon tetrachloride (“SiCl₄”), trichlorosilane (“SiHCl₃”),dichlorosilane (“SiH₂Cl₂”), and silane (“SiH₄”). Examples of appropriatetemperatures for an epitaxy process may range from about 950° C. toabout 1250° C. An appropriate temperature may be higher or lower,however, depending upon, for example, the chemical source used for theepitaxy process. Such process tools are commercially available fromApplied Materials, Inc., Santa Clara, Calif. The X-ray diffractometermay be configured as described above.

[0552] The X-ray diffractometer may be coupled to the process toolaccording to any of the embodiments described herein. For example, anX-ray diffractometer may be coupled to a process chamber of theepitaxial process tool or may be disposed proximate to the processchamber in a measurement chamber. In addition, a processor may becoupled to the X-ray diffractometer and the process tool. The processormay be further configured as described above.

[0553] In this manner, the measurement device may be configured tofunction as a single measurement device or as multiple measurementdevices. Because multiple measurement devices may be integrated into asingle measurement device of the system, elements of a first measurementdevice, for example, may also be elements of a second measurementdevice. In addition, it may be advantageous for additional elements sucha handling robots, stages, processor, and power supplies of a firstmeasurement device to be used by a second measurement device. Themeasurement device may also include an autofocus mechanism that may beconfigured to bring a specimen substantially into focus (i.e., toapproximately a correct height) for a first measurement device, and thenfor a second measurement device. The system, the measurement device, theautofocus mechanism, and the processor may be further configured asdescribed herein.

[0554] In addition, such a system may be coupled to a process toolincluding, but not limited to, a chemical-mechanical polishing tool, adeposition tool such as a physical vapor deposition tool, a platingtool, and an etch tool. The system may be coupled to the process tool asdescribed herein. Furthermore, the system may be coupled to or disposedproximate to a process tool such that the system may determine at leasttwo properties of a specimen, a layer of a specimen, and/or a featureformed on the specimen prior to, during, or subsequent to a process.

[0555] In an embodiment, a system may be configured to determine atleast two properties of a specimen including an electrical property suchas a capacitance, a dielectric constant, and a resistivity of thespecimen and/or a layer on the specimen and a thin film characteristicof the specimen and/or a layer on the specimen. The thin filmcharacteristic may include any of the characteristics as describedherein. The specimen may include a wafer or a dielectric materialdisposed upon a wafer or another substrate. Examples of appropriatedielectric materials include, but are not limited to, gate dielectricmaterials and low-k dielectric materials. Typically, low-k dielectricmaterials include materials having a dielectric constant less than about3.8, and high-k materials include materials having a dielectric constantgreater than about 4.5.

[0556] The system may be configured as described herein. For example,the system may include a processor coupled to a first measurement deviceand a second measurement device and configured to determine at least athin film characteristic of the specimen and/or a layer on the specimenfrom one or more output signals of the first measurement device and anelectrical property of the specimen and/or a layer on the specimen froman output signal of the second measurement device. In addition, theprocessor may be configured to determine other properties of thespecimen from the one or more output signals. For example, the processormay also be used to determine additional properties of the specimenincluding, but not limited to, a characteristic of metal contaminationon the specimen. In an embodiment, the first measurement device mayinclude, but is not limited to, a reflectometer, a spectroscopicreflectometer, an ellipsometer, a spectroscopic ellipsometer, a beamprofile ellipsometer, a photo-acoustic device, an eddy current device,an X-ray reflectometer, a grazing X-ray reflectometer, and an X-raydiffractometer and a system configured to measure an electrical propertyof the specimen. The system, the first measurement device, and theprocessor may be further configured as described herein.

[0557] Such a system may be coupled to a process tool such as adeposition tool including, but not limited to, a chemical vapordeposition tool, an atomic layer deposition tool and a physical vapordeposition tool, a plating tool, a chemical-mechanical polishing tool, athermal tool such as a furnace, a cleaning tool, and an ion implanter,as described herein. Such a system may also be coupled to an etch tool.In this manner, at least the two properties may be used to determine anamount of plasma damage caused to the specimen and/or a layer on thespecimen during an etch process performed by the etch tool. For example,plasma damage may include, but is not limited to, roughness and pittingof a specimen or a layer on a specimen generated during an etch process.

[0558] The second measurement device may be configured to measure anelectrical property of the specimen as illustrated, for example, in U.S.Patent Application entitled “A Method Of Detecting Metal ContaminationOn A Semiconductor Wafer,” by Xu et al., filed May 10, 2001, which isincorporated by reference as if fully set forth herein. For example, aspecimen may be placed into a wafer cassette, which may be loaded intothe system. The system may include a robotic handler, which may beconfigured as described herein. The system may also include apre-aligner that may be configured to alter a position of a specimen.For example, a pre-aligner may be configured to alter a position of thespecimens such the orientation of each specimen may be substantially thesame during processing. Alternatively, the pre-aligner may be configuredto detect an alignment mark formed on a specimen and to alter a positionof the specimen such that a position of the alignment mark may besubstantially the same as a predetermined position.

[0559] In an embodiment, the second measurement device may also includean oven that may be used to anneal a specimen. The oven may beconfigured to heat the specimen to a temperature, for example, of lessthan approximately 1100° C. The oven may also be configured to drive themetal contamination into a dielectric material of the specimen or into asemiconductor substrate of the specimen. The second measurement devicemay also include a cooling device configured to reduce a temperature ofthe specimen subsequent to the annealing process. The cooling device mayinclude any such device known in the art such as a chill plate.

[0560] In an embodiment, the second measurement device may include adevice configured to deposit a charge on an upper surface of thespecimen. The device may include, for example, a non-contact coronacharging device such as a needle corona source or a wire corona source.Additional examples of non-contact corona charging devices areillustrated in U.S. Pat. No. 5,99,558 to Castellano et al., U.S. Pat.No. 5,594,247 to Verkuil et al., U.S. Pat. No. 5,644,223 to Verkuil, andU.S. Pat. No. 6,191,605 to Miller et al., which are incorporated byreference as if fully set forth herein. The deposited charge may bepositive or negative depending on the parameters of the device used todeposit the charge. The device may be used to deposit a charge onpredetermined regions of the specimen or on randomly determined regionsof the specimen. In addition, the device may also be used to deposit acharge on a portion of the specimen or on substantially the entirespecimen.

[0561] In an embodiment, the second measurement device may also includea sensor configured to measure at least one electrical property of thecharged upper surface of the specimen. The sensor may be configured tooperate as a non-contact work function sensor or a surface photo-voltagesensor. The non-contact work function sensor may include, e.g., a Kelvinprobe sensor or a Monroe sensor. Additional examples of work functionsensors, which may be incorporated into the system, are illustrated inU.S. Pat. No. 4,812,756 to Curtis et al., U.S. Pat. No. 5,485,091 toVerkuil, U.S. Pat. No. 5,650,731 to Fung, and U.S. Pat. No. 5,767,693 toVerkuil and are incorporated by reference as if fully set forth herein.The sensor may be used to measure electrical properties, which mayinclude, but are not limited to, a tunneling voltage, a surface voltage,and a surface voltage as a function of time. The second measurementdevice may also include an illumination system that may be configured todirect a pulse of light toward the specimen and that may be used togenerate a surface photo-voltage of the specimen. As such, an electricalproperty that may be measured by the sensor may also include a surfacephoto-voltage of the specimen. The system may further include a movablechuck configured to alter a position of the specimen under the device,under the illumination system, and under the sensor. As such, the secondmeasurement device may be used to measure an electrical property of thespecimen as a function of time and position of the specimen.

[0562] In an additional embodiment, the system may also include aprocessor that may be configured as described herein and may be used tomonitor and control operation of the oven to heat the specimen to ananneal temperature. The processor may also be configured to monitor andcontrol the operation of the device to deposit a charge on an uppersurface of the specimen. Additionally, the processor may be furtherconfigured to monitor and control the operation of the sensor to measurean electrical property of the specimen. The measured electrical propertymay include a surface voltage of a dielectric material formed on thespecimen, which may be measured as a function of time. The secondmeasurement device may be configured to generate one or more outputsignals responsive to the measured electrical property. The processormay be configured to use one or more output signals from the secondmeasurement device to determine at least one property of the specimensuch as a resistivity of the dielectric material. The resistivity of thedielectric material may be determined by using the following equation:

ρ_(dielectric) =−V/[(dV/dt)·∈·∈₀],

[0563] where ρ_(dielectric) is the resistivity of the dielectricmaterial, V is the measured surface voltage of the dielectric material,t is the decay time, ∈ is the dielectric constant of the dielectricmaterial, and ∈₀ is the vacuum permittivity. A characteristic of metalcontamination in the dielectric material may also be a function of theresistivity of the dielectric material.

[0564] Furthermore, the processor may be used to determine acharacteristic of the metal contamination in the specimen. Thecharacteristic of the metal contamination in the specimen may bedetermined as a function of the measured electrical property. Inaddition, the processor may also be configured to monitor and control anadditional device of the operating system including, but not limited to,a robotic wafer handler, a pre-aligner, a wafer chuck, and/or anillumination system.

[0565] In an embodiment, each of the systems described above may becoupled to an secondary electron spectroscopy device. Such a system maybe configured to determine material composition of a specimen byanalyzing secondary electron emission from the specimen. An example ofsuch a device is illustrated in PCT Application No. WO 00/70646 toShachal et al., and is incorporated by reference as if fully set forthherein.

[0566] In an additional embodiment, more than one system describedherein may be coupled to a semiconductor fabrication process tool. Eachof the systems may be configured to determine at least two properties ofa specimen during use. Furthermore, each of the systems may beconfigured to determine at least two substantially similar properties orat least two different properties. In this manner, properties of aplurality of specimens may be determined substantially simultaneouslyand at multiple points throughout a semiconductor fabrication process.

[0567] In a further embodiment, each of the systems described herein maybe coupled to a stand alone metrology and/or inspection system. Forexample, each of the systems described herein may be coupled to a standalone metrology and/or inspection system such that signals such asanalog or digital signals may be sent between the coupled systems. Eachof the systems may be configured as a single tool or a cluster tool thatmay or may not be coupled to a process tool such as a semiconductorfabrication process tool. The stand alone metrology and/or inspectionsystem may be configured such that the stand alone system may becalibrated with a calibration standard. An appropriate calibrationstandard may include any calibration standard known in the art. Thestand alone metrology and/or inspection system may be configured tocalibrate the system coupled to the stand alone system.

[0568] In addition, the stand alone metrology and/or inspection systemmay be coupled to a plurality of systems as described herein. In thismanner, the stand alone metrology and/or inspection system may beconfigured to calibrate the plurality of systems coupled to the standalone system. For example, a plurality of systems may include singletools and/or cluster tools incorporated within the same manufacturingand/or research and development facility. Each of the plurality ofsystems may be configured to determine the same at least twocharacteristics of a specimen. In addition, each of the plurality ofsystems may be configured to determine at least two characteristics ofsubstantially the same type of specimen such as specimens upon which asubstantially similar type of semiconductor device may be formed. Forexample, each of the plurality of systems may be incorporated into thesame type of product line in a manufacturing facility.

[0569] In addition, the stand alone metrology and/or inspection systemmay be configured to calibrate each of the plurality of systems usingthe same calibration standard. As such, a plurality of metrology and/orinspection systems in a manufacturing and/or research and developmentfacility may be calibrated using the same calibration standard. Inaddition, the stand alone metrology and/or inspection system may beconfigured to generate a set of data. The set of data may include outputsignals from a measurement device of a system and characteristics of aspecimen determined by a processor of the system using the outputsignals. The set of data may also include output signals and determinedcharacteristics corresponding to the output signals that may begenerated by using a plurality of systems as described herein.Therefore, the set of data may be used to calibrate and/or monitor theperformance of a plurality of systems.

[0570] In an additional embodiment, each of the systems, as describedherein, may be coupled to a cleaning tool. A cleaning tool may includeany tool configured to remove unwanted material from a wafer such as adry cleaning tool, a wet cleaning tool, a laser cleaning tool, and/or ashock wave cleaning tool. A dry cleaning tool may include a dry etchtool, which may be configured to expose a specimen to a plasma. Forexample, resist may be stripped from a specimen using an oxygen plasmain a plasma etch tool. An appropriate plasma may vary depending upon,for example, the type of material to be stripped from a specimen. Theplasma etch tool may be further configured as described herein. Drycleaning tools are commercially available from, for example, AppliedMaterials, Inc., Santa Clara, Calif. A wet cleaning tool may beconfigured to submerge a specimen in a chemical solution, which mayinclude, but is not limited to, a sulfuric-acid mixture or ahydrofluoric acid mixture. Subsequent to exposure to the chemicalsolution, the specimen may be rinsed with de-ionized water and dried.Wet cleaning tools are commercially available from, for example, FSIInternational, Inc., Chaska, Minn. An example of a laser cleaning toolis illustrated in “Chemically Assisted Laser Removal of Photoresist andParticles from Semiconductor Wafers,” by Genut et al. of OramirSemiconductor Equipment Ltd., Israel, presented at the 28^(th) AnnualMeeting of the Fine Particle Society, Apr. 1-3, 1998, which areincorporated by reference as if fully set forth herein. An example of ashock wave cleaning tool is illustrated in U.S. Pat. No. 5,023,424 toVaught, which is incorporated by reference as if fully set forth herein.

[0571] In a further embodiment, each of the systems, as describedherein, may be coupled to a thermal tool such as a tool configured forrapid thermal processing (“RTP”) of a wafer. A rapid thermal processingtool may be configured to subject a specimen to a relatively brief, yethighly controlled thermal cycle. For example, the RTP tool may beconfigured to heat a specimen to over approximately 1000° C. in underapproximately 10 seconds. RTP may be used mainly for modifyingproperties of a specimen or a film formed on a specimen formed by otherprocesses. For example, RTP may be commonly used for annealing, whichmay activate and control the movement of atoms in a specimen afterimplanting. Another common use is for silicidation, which may formsilicon-containing compounds with metals such as tungsten or titanium. Athird type of RTP application is oxidation, which may involve growingoxide on a specimen such as a silicon wafer. RTP tools are commerciallyavailable from, for example, Applied Materials, Inc., Santa Clara,Calif.

[0572] In an embodiment, each of the processors described aboveincluding a local processor, a remote controller computer, or a remotecontroller computer coupled to a local processor may be configured toperform a computer integrated manufacturing technique as illustrated inEuropean Patent Application EP 1 072 967 A2 to Arackaparambil et al.,which is incorporated by reference as if fully set forth herein.

[0573] In a further embodiment, each of the processors as describedherein may be configured to automatically generate a schedule for waferprocessing within a multichamber semiconductor wafer processing tool asillustrated in U.S. Pat. No. 6,201,999 to Jevtic, U.S. Pat. No.6,224,638 to Jevtic, and PCT Application No. WO 98/57358 to Jevtic,which are incorporated by reference as if fully set forth herein. Inaddition, each of the systems as described herein may include a multipleblade wafer handler. A processor as described herein may be configuredto control the multiple blade wafer handler. Each of the processors asdescribed herein may be configured to assign a priority value to processchambers and/or measurement chambers of a cluster tool such as a processtool or a measurement and/or inspection system. One or more measurementchambers may be coupled to a process tool according to any of theembodiments as described herein. Each of the processors as describedherein may also be configured to assign a priority to measurementchambers of a cluster tool such as a metrology and/or inspection system.

[0574] The processor may be configured to control the multiple bladewafer handler such that the multiple blade wafer handler may beconfigured to move a specimen from chamber to chamber according to theassigned priorities. The processor may also be configured to determinean amount of time available before a priority move is to be performed.If the determined amount of time is sufficient before a priority move isto be performed, the processor may control the multiple blade waferhandler to perform a non-priority move while waiting. For example, ifthe determined amount of time is sufficient before a process step is tobe performed on a specimen, then the multiple blade wafer handler maymove the specimen to a measurement chamber. In this manner, a system asdescribed herein may be configured to determine at least two propertiesof a specimen while the specimen is waiting between process steps. Theprocessor may also be configured to dynamically vary assigned prioritiesdepending upon, for example, the availability of process and/ormeasurement chambers. Furthermore, the processor may assign prioritiesto the process and/or measurement chambers based upon, for example, atime required for a wafer handler to move the wafer in a particularsequence.

[0575] In addition, each of the processors as described herein may beconfigured to use “options,” which may correspond to optional componentsof a process tool, and which may be selected by a user according to theoptional components that the user desires to have as part of the processtool as illustrated in U.S. Pat. No. 6,199,157 to Dov et al., which isincorporated by reference as if fully set forth herein.

[0576] A process tool as described herein may also include multiplechill process chambers or a multi-slot chill process chamber. Suchmultiple or multi-slot chill process chambers allows multiple wafers tobe cooled while other wafers are subjected to processing steps in otherchambers. In addition, each of the processors as described herein may beconfigured to assign a priority level to each wafer in a processingsequence depending on its processing stage, and this priority level maybe used to sequence the movement of wafers between chambers asillustrated in U.S. Pat. No. 6,201,998 to Lin et al., which isincorporated by reference as if fully set forth herein. In this manner,a system as described herein may increase an efficiency at which wafersare transferred among different processing chambers in a waferprocessing facility.

[0577] In a further embodiment, each of the processors, as describedherein, may be configured to determine at least a roughness of aspecimen, a layer on a specimen, and/or a feature of a specimen. Forexample, a processor may be configured to determine a roughness from oneor more output signals of a measurement device using mathematicalmodeling. For example, the one or more output signals may be generatedby a measurement device such as a non-imaging scatterometer, ascatterometer, a spectroscopic scatterometer, and a non-imaging Linnikmicroscope. Appropriate mathematical models may include any mathematicalmodels known in the art such as mathematical models that may be used todetermine a critical dimension of a feature. The mathematical models maybe configured to process data of multiple wavelengths or data of asingle wavelength.

[0578] A system, including such a processor, may be coupled to a processtool such as a lithography tool, an atomic layer deposition tool, acleaning tool, and an etch tool. For example, a develop process step ina lithography process may cause a significant amount of roughness to apatterned resist. In addition, a layer of material formed by atomiclayer deposition may have a significant amount of roughness,particularly on sidewalls of features on a specimen. Furthermore, wetcleaning tools may tend to etch a specimen, a layer on a specimen,and/or features on a specimen, which may cause roughness on thespecimen, the layer, and/or the features, respectively. The system mayalso be coupled to any process tool configured to perform a process thatmay cause roughness on a surface of a specimen. The system may becoupled to the process tool according to any of the embodimentsdescribed herein. For example, a measurement device of such a system maybe coupled to a process chamber of a process tool such that the systemmay determine at least a roughness of a specimen, a layer on a specimen,and/or a feature on a specimen prior to and subsequent to a process. Forexample, the measurement device may be coupled to a process tool suchthat a robotic wafer handler may move below or above the measurementdevice. The system may be further configured as described herein.

[0579] The following references, to the extent that they provideexemplary procedural or other information or details supplementary tothose set forth herein, are specifically incorporated herein byreference: U.S. patent application Ser. No. 09/310,017 filed on May 11,1999, Ser. No. 09/396,143 filed on Sep. 15, 1999, Ser. No. 09/556,238filed on Apr. 24, 2000, and Ser. No. 09/695,726 filed on Oct. 23, 2000.

[0580] Further modifications and alternative embodiments of variousaspects of the invention may be apparent to those skilled in the art inview of this description. For example, the system may also include astage configured to tilt in a number of angles and directions withrespect to a measurement device. Accordingly, this description is to beconstrued as illustrative only and is for the purpose of teaching thoseskilled in the art the general manner of carrying out the invention. Itis to be understood that the forms of the invention shown and describedherein are to be taken as the presently preferred embodiments. Elementsand materials may be substituted for those illustrated and describedherein, parts and processes may be reversed, and certain features of theinvention may be utilized independently, all as would be apparent to oneskilled in the art after having the benefit of this description of theinvention. Changes may be made in the elements described herein withoutdeparting from the spirit and scope of the invention as described in thefollowing claims.

What is claimed is:
 1. A system configured to determine at least twoproperties of a specimen during use, comprising: a stage configured tosupport the specimen during use; a measurement device coupled to thestage, comprising: an illumination system configured to direct energytoward a surface of the specimen during use; and a detection systemcoupled to the illumination system and configured to detect energypropagating from the surface of the specimen during use, wherein themeasurement device is configured to generate one or more output signalsin response to the detected energy during use; and a processor coupledto the measurement device and configured to determine a first propertyand a second property of the specimen from the one or more outputsignals during use, wherein the first property comprises a criticaldimension of the specimen, and wherein the second property comprisesoverlay misregistration of the specimen.
 2. The system of claim 1,wherein the stage is further configured to move laterally during use. 3.The system of claim 1, wherein the stage is further configured to moverotatably during use.
 4. The system of claim 1, wherein the stage isfurther configured to move laterally and rotatably during use.
 5. Thesystem of claim 1, wherein the illumination system comprises a singleenergy source.
 6. The system of claim 1, wherein the illumination systemcomprises more than one energy sources.
 7. The system of claim 1,wherein the detection system comprises a single energy sensitive device.8. The system of claim 1, wherein the detection system comprises morethan one energy sensitive devices.
 9. The system of claim 1, wherein themeasurement device further comprises a non-imaging scatterometer. 10.The system of claim 1, wherein the measurement device further comprisesa scatterometer.
 11. The system of claim 1, wherein the measurementdevice further comprises a spectroscopic scatterometer.
 12. The systemof claim 1, wherein the measurement device further comprises areflectometer.
 13. The system of claim 1, wherein the measurement devicefurther comprises a spectroscopic reflectometer.
 14. The system of claim1, wherein the measurement device further comprises an ellipsometer. 15.The system of claim 1, wherein the measurement device further comprisesa spectroscopic ellipsometer.
 16. The system of claim 1, wherein themeasurement device further comprises a bright field imaging device. 17.The system of claim 1, wherein the measurement device further comprisesa dark field imaging device.
 18. The system of claim 1, wherein themeasurement device further comprises a bright field and a dark fieldimaging device.
 19. The system of claim 1, wherein the measurementdevice further comprises a bright field non-imaging device.
 20. Thesystem of claim 1, wherein the measurement device further comprises adark field non-imaging device.
 21. The system of claim 1, wherein themeasurement device further comprises a bright field and a dark fieldnon-imaging device.
 22. The system of claim 1, wherein the measurementdevice further comprises a coherence probe microscope.
 23. The system ofclaim 1, wherein the measurement device further comprises aninterference microscope.
 24. The system of claim 1, wherein themeasurement device further comprises an optical profilometer.
 25. Thesystem of claim 1, wherein the measurement device further comprises atleast a first measurement device and a second measurement device, andwherein the first and second measurement devices are selected from thegroup consisting of a non-imaging scatterometer, a scatterometer, aspectroscopic scatterometer, a reflectometer, a spectroscopicreflectometer, an ellipsometer, a spectroscopic ellipsometer, a brightfield imaging device, a dark field imaging device, a bright field and adark field imaging device, a bright field non-imaging device, a darkfield non-imaging device, a bright field and a dark field non-imagingdevice, a coherence probe microscope, an interference microscope, and anoptical profilometer.
 26. The system of claim 1, wherein the measurementdevice further comprises at least a first measurement device and asecond measurement device, and wherein optical elements of the firstmeasurement device comprise optical elements of the second measurementdevice.
 27. The system of claim 1, wherein the processor is furtherconfigured to determine a third property of the specimen from the one ormore output signals during use, and wherein the third property comprisesa presence of defects on the specimen.
 28. The system of claim 27,wherein the defects comprise micro defects and macro defects.
 29. Thesystem of claim 27, wherein the illumination system is furtherconfigured to direct energy toward a bottom surface of the specimenduring use, wherein the detection system is further configured to detectenergy propagating from the bottom surface of the specimen during use,and wherein the third property further comprises a presence of defectson the bottom surface of the specimen.
 30. The system of claim 29,wherein the defects comprise macro defects.
 31. The system of claim 1,wherein the processor is further configured to determine a thirdproperty of the specimen from the one or more output signals during use,and wherein the third property comprises a flatness measurement of thespecimen.
 32. The system of claim 1, wherein the processor is furtherconfigured to determine a third property and a fourth property of thespecimen from the one or more output signals during use, wherein thethird property comprises a presence of defects on the specimen, andwherein the fourth property comprises a flatness measurement of thespecimen.
 33. The system of claim 1, wherein the processor is furtherconfigured to determine a third property of the specimen from the one ormore output signals during use, and wherein the third property isselected from the group consisting of a roughness of the specimen, aroughness of a layer on the specimen, and a roughness of a feature ofthe specimen.
 34. The system of claim 33, wherein the system is coupledto a process tool selected from the group consisting of a lithographytool, an atomic layer deposition tool, a cleaning tool, and an etchtool.
 35. The system of claim 1, wherein the system is furtherconfigured to determine at least two properties of the specimensimultaneously during use.
 36. The system of claim 1, wherein theillumination system is further configured to direct energy to multiplelocations on the surface of the specimen substantially simultaneously,and wherein the detection system is further configured to detect energypropagating from the multiple locations on the surface of the specimensubstantially simultaneously such that one or more of the at least twoproperties of the specimen can be determined at the multiple locationssubstantially simultaneously.
 37. The system of claim 1, wherein thesystem is coupled to a process tool.
 38. The system of claim 1, whereinthe system is coupled to a process tool, and wherein the system isdisposed within the process tool.
 39. The system of claim 1, wherein thesystem is coupled to a process tool, and wherein the system is arrangedlaterally proximate to the process tool.
 40. The system of claim 1,wherein the system is coupled to a process tool, and wherein the processtool comprises a wafer handler configured to move the specimen to thestage during use.
 41. The system of claim 1, wherein the system iscoupled to a process tool, and wherein the stage is configured to movethe specimen from the system to the process tool during use.
 42. Thesystem of claim 1, wherein the system is coupled to a process tool, andwherein the stage is further configured to move the specimen to aprocess chamber of the process tool during use.
 43. The system of claim1, wherein the system is coupled to a process tool, and wherein thesystem is further configured to determine at least the two properties ofthe specimen while the specimen is waiting between process steps. 44.The system of claim 1, wherein the system is coupled to a process tool,wherein the process tool comprises a support device configured tosupport the specimen during a process step, and wherein an upper surfaceof the support device is substantially parallel to an upper surface ofthe stage.
 45. The system of claim 1, wherein the system is coupled to aprocess tool, wherein the process tool comprises a support deviceconfigured to support the specimen during a process step, and wherein anupper surface of the stage is angled with respect to an upper surface ofthe support device.
 46. The system of claim 1, wherein the system iscoupled to a process tool, and wherein the process tool comprises alithography tool.
 47. The system of claim 1, wherein the systemcomprises a measurement chamber, wherein the stage and the measurementdevice are disposed within the measurement chamber, and wherein themeasurement chamber is coupled to a process tool.
 48. The system ofclaim 1, wherein the system comprises a measurement chamber, wherein thestage and the measurement device are disposed within the measurementchamber, wherein the measurement chamber is coupled to a process tool,and wherein the measurement chamber is disposed within the process tool.49. The system of claim 1, wherein the system comprises a measurementchamber, wherein the stage and the measurement device are disposedwithin the measurement chamber, wherein the measurement chamber iscoupled to a process tool, and wherein the measurement chamber isarranged laterally proximate to a process chamber of the process tool.50. The system of claim 1, wherein the system comprises a measurementchamber, wherein the stage and the measurement device are disposedwithin the measurement chamber, wherein the measurement chamber iscoupled to a process tool, and wherein the measurement chamber isarranged vertically proximate to a process chamber of the process tool.51. The system of claim 1, wherein a process tool comprises a processchamber, wherein the stage is disposed within the process chamber, andwherein the stage is further configured to support the specimen during aprocess step.
 52. The system of claim 51, wherein the processor isfurther configured to determine at least the two properties of thespecimen during the process step.
 53. The system of claim 51, whereinthe processor is further configured to obtain a signature characterizingthe process step during use, and wherein the signature comprises atleast one singularity representative of an end of the process step. 54.The system of claim 51, wherein the processor is coupled to the processtool and is further configured to alter a parameter of one or moreinstruments coupled to the process tool in response to the determinedproperties using an in situ control technique during use.
 55. The systemof claim 1, wherein a process tool comprises a first process chamber anda second process chamber, and wherein the stage is further configured tomove the specimen from the first process chamber to the second processchamber during use.
 56. The system of claim 1, wherein a process toolcomprises a first process chamber and a second process chamber, whereinthe stage is further configured to move the specimen from the firstprocess chamber to the second process chamber during use, and whereinthe processor is further configured to determine at least the twoproperties of the specimen as the stage is moving the specimen from thefirst process chamber to the second process chamber.
 57. The system ofclaim 1, wherein a process tool comprises a first process chamber and asecond process chamber, wherein the stage is further configured to movethe specimen from the first process chamber to the second processchamber during use, wherein the processor is further configured todetermine at least the two properties of the specimen as the stage ismoving the specimen from the first process chamber to the second processchamber, and wherein the process tool comprises a lithography tool. 58.The system of claim 57, wherein the first process chamber is configuredto chill the specimen during use, and wherein the second process chamberis configured to apply resist to the specimen during use.
 59. The systemof claim 57, wherein the first process chamber is configured to chillthe specimen subsequent to a post apply bake process step during use,and wherein the second process chamber is configured to expose thespecimen during use.
 60. The system of claim 57, wherein the firstprocess chamber is configured to expose the specimen during use, andwherein the second process chamber is configured to bake the specimensubsequent to exposure of the specimen during use.
 61. The system ofclaim 57, wherein the first process chamber is configured to chill thespecimen subsequent to a post exposure bake process step during use, andwherein the second process chamber is configured to develop the specimenduring use.
 62. The system of claim 57, wherein the first processchamber is configured to develop the specimen during use, and whereinthe second process chamber is configured to bake the specimen subsequentto a develop process step during use.
 63. The system of claim 57,wherein the first process chamber is configured to develop the specimenduring use, and wherein the second process chamber is configured toreceive the specimen in a wafer cassette during use.
 64. The system ofclaim 1, wherein the processor is further configured to compare thedetermined properties of the specimen and properties of a plurality ofspecimens during use.
 65. The system of claim 1, wherein the processoris further configured to compare at least one of the determinedproperties of the specimen to a predetermined range for the property.66. The system of claim 1, wherein the processor is further configuredto compare at least one of the determined properties of the specimen toa predetermined range for the property, and wherein the processor isfurther configured to generate an output signal if the determinedproperty of the specimen is outside of the predetermined range duringuse.
 67. The system of claim 1, wherein the processor is furtherconfigured to alter a sampling frequency of the measurement device inresponse to the determined first or second property of the specimenduring use.
 68. The system of claim 1, wherein the processor is furtherconfigured to alter a parameter of an instrument coupled to themeasurement device in response to the determined first or secondproperty using a feedback control technique during use.
 69. The systemof claim 1, wherein the processor is further configured to alter aparameter of an instrument coupled to the measurement device in responseto the determined first or second property using a feedforward controltechnique during use.
 70. The system of claim 1, wherein the processoris further configured to generate a database during use, and wherein thedatabase comprises the determined first and second properties of thespecimen.
 71. The system of claim 70, wherein the processor is furtherconfigured to calibrate the measurement device using the database duringuse.
 72. The system of claim 70, wherein the processor is furtherconfigured to monitor output signals generated by measurement deviceusing the database during use.
 73. The system of claim 70, wherein thedatabase further comprises first and second properties of a plurality ofspecimens.
 74. The system of claim 73, wherein the first and secondproperties of the plurality of specimens are determined using themeasurement device.
 75. The system of claim 73, wherein the first andsecond properties of the plurality of specimens are determined using aplurality of measurement devices.
 76. The system of claim 75, whereinthe processor is further coupled to the plurality of measurementdevices.
 77. The system of claim 76, wherein the processor is furtherconfigured to calibrate the plurality of measurement devices using thedatabase during use.
 78. The system of claim 76, wherein the processoris further configured to monitor output signals generated by theplurality of measurement devices using the database during use.
 79. Thesystem of claim 1, further comprising a stand alone system coupled tothe system, wherein the stand alone system is configured to becalibrated with a calibration standard during use, and wherein the standalone system is further configured to calibrate the system during use.80. The system of claim 1, further comprising a stand alone systemcoupled the system and at least one additional system, wherein the standalone system is configured to be calibrated with a calibration standardduring use, and wherein the stand alone system is further configured tocalibrate the system and at least the one additional system during use.81. The system of claim 1, wherein the system is further configured todetermine at least the two properties of the specimen at more than oneposition on the specimen, wherein the specimen comprises a wafer, andwherein the processor is configured to alter at least one parameter ofone or more instruments coupled to a process tool in response to atleast one of the determined properties of the specimen at the more thanone position on the specimen to reduce within wafer variation of atleast one of the determined properties.
 82. The system of claim 1,wherein the processor is further coupled to a process tool.
 83. Thesystem of claim 82, wherein the process tool comprises a lithographytool.
 84. The system of claim 82, wherein the processor is furtherconfigured to alter a parameter of one or more instruments coupled tothe process tool in response to the determined first or second propertyusing a feedback control technique during use.
 85. The system of claim82, wherein the processor is further configured to alter a parameter ofone or more instruments coupled to the process tool in response to thedetermined first or second property using a feedforward controltechnique during use.
 86. The system of claim 82, wherein the processoris further configured to monitor a parameter of one or more instrumentscoupled to the process tool during use.
 87. The system of claim 86,wherein the processor is further configured to determine a relationshipbetween the determined properties and at least one of the monitoredparameters during use.
 88. The system of claim 87, wherein the processoris further configured to alter the parameter of the one or moreinstruments in response to the determined relationship during use. 89.The system of claim 1, wherein the processor is further coupled to aplurality of measurement devices, and wherein each of the plurality ofmeasurement devices is coupled to at least one of a plurality of processtools.
 90. The system of claim 1, wherein the processor comprises alocal processor coupled to the measurement device and a remotecontroller computer coupled to the local processor, wherein the localprocessor is configured to at least partially process the one or moreoutput signals during use, and wherein the remote controller computer isconfigured to further process the at least partially processed one ormore output signals during use.
 91. The system of claim 90, wherein thelocal processor is further configured to determine the first propertyand the second property of the specimen during use.
 92. The system ofclaim 90, wherein the remote controller computer is further configuredto determine the first property and the second property of the specimenduring use.
 93. A method for determining at least two properties of aspecimen, comprising: disposing the specimen upon a stage, wherein thestage is coupled to a measurement device, and wherein the measurementdevice comprises an illumination system and a detection system;directing energy toward a surface of the specimen using the illuminationsystem; detecting energy propagating from the surface of the specimenusing the detection system; generating one or more output signalsresponsive to the detected energy; and processing the one or more outputsignals to determine a first property and a second property of thespecimen, wherein the first property comprises a critical dimension ofthe specimen, and wherein the second property comprises overlaymisregistration of the specimen.
 94. The method of claim 93, furthercomprising laterally moving the stage during said directing energy andsaid detecting energy.
 95. The method of claim 93, further comprisingrotatably moving the stage during said directing energy and saiddetecting energy.
 96. The method of claim 93, further comprisinglaterally and rotatably moving the stage during said directing energyand said detecting energy.
 97. The method of claim 93, wherein theillumination system comprises a single energy source.
 98. The method ofclaim 93, wherein the illumination system comprises more than one energysource.
 99. The method of claim 93, wherein the detection systemcomprises a single energy sensitive device.
 100. The method of claim 93,wherein the detection system comprises more than one energy sensitivedevices.
 101. The method of claim 93, wherein the measurement devicefurther comprises a non-imaging scatterometer.
 102. The method of claim93, wherein the measurement device further comprises a scatterometer.103. The method of claim 93, wherein the measurement device furthercomprises a spectroscopic scatterometer.
 104. The method of claim 93,wherein the measurement device further comprises a reflectometer. 105.The method of claim 93, wherein the measurement device further comprisesa spectroscopic reflectometer.
 106. The method of claim 93, wherein themeasurement device further comprises an ellipsometer.
 107. The method ofclaim 93, wherein the measurement device further comprises aspectroscopic ellipsometer.
 108. The method of claim 93, wherein themeasurement device further comprises a bright field imaging device. 109.The method of claim 93, wherein the measurement device further comprisesa dark field imaging device.
 110. The method of claim 93, wherein themeasurement device further comprises a bright field and dark fieldimaging device.
 111. The method of claim 93, wherein the measurementdevice further comprises a bright field non-imaging device.
 112. Themethod of claim 93, wherein the measurement device further comprises adark field non-imaging device.
 113. The method of claim 93, wherein themeasurement device further comprises a bright field and dark fieldnon-imaging device
 114. The method of claim 93, wherein the measurementdevice further comprises a coherence probe microscope.
 115. The methodof claim 93, wherein the measurement device further comprises aninterference microscope.
 116. The method of claim 93, wherein themeasurement device further comprises an optical profilometer.
 117. Themethod of claim 93, wherein the measurement device further comprises atleast a first measurement device and a second measurement device, andwherein the first and second measurement devices are selected from thegroup consisting of a non-imaging scatterometer, a scatterometer, aspectroscopic scatterometer, a reflectometer, a spectroscopicreflectometer, an ellipsometer, a spectroscopic ellipsometer, a brightfield imaging device, a dark field imaging device, a bright field anddark field imaging device, a bright field non-imaging device, a darkfield non-imaging device, a bright field and dark field non-imagingdevice, a coherence probe microscope, an interference microscope, and anoptical profilometer.
 118. The method of claim 93, wherein themeasurement device further comprises at least a first measurement deviceand a second measurement device, and wherein optical elements of thefirst measurement device comprise optical elements of the secondmeasurement device.
 119. The method of claim 93, further comprisingprocessing the one or more output signals to determine a third propertyof the specimen, wherein the third property comprises a presence ofdefects on the specimen.
 120. The method of claim 93, further comprisingprocessing the one or more output signals to determine a third propertyof the specimen, wherein the third property comprises a presence ofdefects on the specimen, and wherein the defects comprise micro defectsand macro defects.
 121. The method of claim 93, further comprisingprocessing the one or more output signals to determine a third propertyof the specimen, wherein the third property comprises a presence ofdefects on the specimen, the method further comprising: directing energytoward a bottom surface of the specimen; and detecting energypropagating from the bottom surface of the specimen, wherein the thirdproperty further comprises a presence of defects on the bottom surfaceof the specimen.
 122. The method of claim 121, wherein the defectscomprise macro defects.
 123. The method of claim 93, further comprisingprocessing the one or more output signals to determine a third propertyof the specimen, wherein the third property comprises a flatnessmeasurement of the specimen.
 124. The method of claim 93, furthercomprising processing the one or more output signals to determine athird property and a fourth property of the specimen, wherein the thirdproperty comprises a presence of defects on the specimen, and whereinthe fourth property comprises a flatness measurement of the specimen.125. The method of claim 93, further comprising processing the one ormore output signals to determine a third property of the specimen,wherein the third property is selected from the group consisting of aroughness of the specimen, a roughness of a layer on the specimen, and aroughness of a feature of the specimen.
 126. The method of claim 125,wherein the stage and the measurement device are coupled to a processtool selected from the group consisting of a lithography tool, an atomiclayer deposition tool, a cleaning tool, and an etch tool.
 127. Themethod of claim 93, wherein processing the one or more output signals todetermine the first and second properties of the specimen comprisessubstantially simultaneously determining the first and second propertiesof the specimen.
 128. The method of claim 93, further comprisingdirecting energy toward multiple locations on the surface of thespecimen substantially simultaneously and detecting energy propagatingfrom the multiple locations substantially simultaneously such that oneor more of the at least two properties of the specimen can be determinedat the multiple locations substantially simultaneously.
 129. The methodof claim 93, wherein the stage and the measurement device are coupled toa process tool.
 130. The method of claim 93, wherein the stage and themeasurement device are coupled to a process tool, and wherein the stageand the measurement device are arranged laterally proximate to theprocess tool.
 131. The method of claim 93, wherein the stage and themeasurement device are coupled to a process tool, and wherein the stageand the measurement device are disposed within the process tool. 132.The method of claim 93, wherein the stage and the measurement device arecoupled to a process tool, and wherein the process tool comprises alithography tool.
 133. The method of claim 93, wherein the stage and themeasurement device are coupled to a process tool, wherein the processtool comprises a wafer handler, and wherein disposing the specimen uponthe stage comprises moving the specimen from the process tool to thestage using the wafer handler.
 134. The method of claim 93, wherein thestage and the measurement device are coupled to a process tool, themethod further comprising moving the specimen to the process toolsubsequent to said directing and said detecting using the stage. 135.The method of claim 93, wherein the stage and the measurement device arecoupled to a process tool, the method further comprising determining atleast the two properties of the specimen while the specimen is waitingbetween process steps.
 136. The method of claim 93, wherein the stageand the measurement device are coupled to a process tool, wherein theprocess tool comprises a support device configured to support thespecimen during a process step, and wherein an upper surface of thesupport device is substantially parallel to an upper surface of thestage.
 137. The method of claim 93, wherein the stage and themeasurement device are coupled to a process tool, wherein the processtool comprises a support device configured to support the specimenduring a process step, and wherein an upper surface of the stage isangled with respect to an upper surface of the support device.
 138. Themethod of claim 93, wherein the stage and the measurement device aredisposed within a measurement chamber, and wherein the measurementchamber is coupled to a process tool.
 139. The method of claim 93,wherein the stage and the measurement device are disposed within ameasurement chamber, wherein the measurement chamber is coupled to aprocess tool, and wherein the measurement chamber is disposed within theprocess tool.
 140. The method of claim 93, wherein the stage and themeasurement device are disposed within a measurement chamber, whereinthe measurement chamber is coupled to a process tool, and wherein themeasurement chamber is arranged laterally proximate to a process chamberof the process tool.
 141. The method of claim 93, wherein the stage andthe measurement device are disposed within a measurement chamber,wherein the measurement chamber is coupled to a process tool, andwherein the measurement chamber is arranged vertically proximate to aprocess chamber of the process tool.
 142. The method of claim 93,wherein disposing the specimen upon the stage comprises disposing thespecimen upon a support device disposed within a process chamber of aprocess tool, and wherein the support device is configured to supportthe specimen during a process step.
 143. The method of claim 142,further comprising performing said directing and said detecting duringthe process step.
 144. The method of claim 143, further comprisingobtaining a signature characterizing the process step, wherein thesignature comprises at least one singularity representative of an end ofthe process step.
 145. The method of claim 143, further comprisingaltering a parameter of one or more instruments coupled to the processtool in response to the determined properties using an in situ controltechnique.
 146. The method of claim 93, further comprising moving thespecimen from a first process chamber to a second process chamber usingthe stage, wherein the first process chamber and the second processchamber are disposed within a process tool.
 147. The method of claim146, further comprising performing said directing and said detectingduring said moving the specimen from the first process chamber to thesecond process chamber.
 148. The method of claim 146, wherein theprocess tool comprises a lithography tool.
 149. The method of claim 148,further comprising: chilling the specimen in the first process chamber;and applying resist to the specimen in the second process chamber. 150.The method of claim 148, further comprising: chilling the specimen inthe first process chamber subsequent to a post apply bake process step;and exposing the specimen in the second process chamber.
 151. The methodof claim 148, further comprising: exposing the specimen in the firstprocess chamber; and baking the specimen subsequent to exposure of thespecimen in the second process chamber.
 152. The method of claim 148,further comprising: chilling the specimen in the first process chambersubsequent to a post exposure bake process step; and developing thespecimen in the second process chamber.
 153. The method of claim 148,further comprising: developing the specimen in the first processchamber; and baking the specimen in the second process chambersubsequent to a develop process step.
 154. The method of claim 148,further comprising: developing the specimen in the first processchamber; and receiving the specimen in a wafer cassette in the secondprocess chamber.
 155. The method of claim 93, further comprisingcomparing at least one of the determined properties of the specimen anddetermined properties of a plurality of specimens.
 156. The method ofclaim 93, further comprising comparing at least one of the determinedproperties of the specimen to a predetermined range for the property.157. The method of claim 93, further comprising comparing at least oneof the determined properties of the specimen to a predetermined rangefor the property and generating an output signal if the determinedproperty of the specimen is outside of the predetermined range.
 158. Themethod of claim 93, further comprising altering a sampling frequency ofthe measurement device in response to the determined first or secondproperty of the specimen.
 159. The method of claim 93, furthercomprising altering a parameter of one or more instruments coupled tothe measurement device in response to the determined first or secondproperty using a feedback control technique.
 160. The method of claim93, further comprising altering a parameter of one or more instrumentscoupled to the measurement device in response to the determined first orsecond property using a feedforward control technique.
 161. The methodof claim 93, further comprising generating a database, wherein thedatabase comprises the determined first and second properties of thespecimen.
 162. The method of claim 161, further comprising calibratingthe measurement device using the database.
 163. The method of claim 161,further comprising monitoring output signals generated by themeasurement device using the database.
 164. The method of claim 161,wherein the database further comprises first and second properties of aplurality of specimens.
 165. The method of claim 164, wherein the firstand second properties of the plurality of specimens are generated usinga plurality of measurement devices.
 166. The method of claim 165,further comprising calibrating the plurality of measurement devicesusing the database.
 167. The method of claim 165, further comprisingmonitoring output signals generated by the plurality of measurementdevices using the database.
 168. The method of claim 93, wherein a standalone system is coupled to the measurement device, the method furthercomprising calibrating the stand alone system with a calibrationstandard and calibrating the measurement device with the stand alonesystem.
 169. The method of claim 93, wherein a stand alone system iscoupled to the measurement device and at least one additionalmeasurement device, the method further comprising calibrating the standalone system with a calibration standard and calibrating the measurementdevice an at least the one additional measurement device with the standalone system.
 170. The method of claim 93, further comprisingdetermining at least the two properties of the specimen at more than oneposition on the specimen, wherein the specimen comprises a wafer, themethod further comprising altering at least one parameter of one or moreinstruments coupled to a process tool in response to at least one of thedetermined properties of the specimen at the more than one position onthe specimen to reduce within wafer variation of at least one of thedetermined properties.
 171. The method of claim 93, further comprisingaltering a parameter of one or more instruments coupled to a processtool in response to the determined first or second property of thespecimen.
 172. The method of claim 93, further comprising altering aparameter of one or more instruments coupled to a process tool inresponse to the determined first or second property of the specimenusing a feedback control technique.
 173. The method of claim 93, furthercomprising altering a parameter of one or more instruments coupled to aprocess tool in response to the determined first or second property ofthe specimen using a feedforward control technique.
 174. The method ofclaim 93, further comprising monitoring a parameter of one or moreinstruments coupled to a process tool.
 175. The method of claim 93,further comprising monitoring a parameter of one or more instrumentscoupled to a process tool and determining a relationship between thedetermined properties and at least one of the monitored parameters. 176.The method of claim 93, further comprising monitoring a parameter of oneor more instruments coupled to a process tool, determining arelationship between the determined properties and at least one of themonitored parameters, and altering the parameter of the one or moreinstruments in response to the relationship.
 177. The method of claim93, further comprising altering a parameter of one or more instrumentscoupled to a plurality of process tools in response to the determinedfirst or second property of the specimen.
 178. The method of claim 93,wherein processing the one or more output signals comprises: at leastpartially processing the one or more output signals using a localprocessor, wherein the local processor is coupled to the measurementdevice; sending the partially processed one or more output signals fromthe local processor to a remote controller computer; and furtherprocessing the partially processed one or more output signals using theremote controller computer.
 179. The method of claim 178, wherein atleast partially processing the one or more output signals comprisesdetermining the first and second properties of the specimen.
 180. Themethod of claim 178, wherein further processing the partially processedone or more output signals comprises determining the first and secondproperties of the specimen.
 181. A computer-implemented method forcontrolling a system configured to determine at least two properties ofa specimen during use, wherein the system comprises a measurementdevice, comprising: controlling the measurement device, wherein themeasurement device comprises an illumination system and a detectionsystem, and wherein the measurement device is coupled to a stage,comprising: controlling the illumination system to direct energy towarda surface of the specimen; controlling the detection system to detectenergy propagating from the surface of the specimen; and generating oneor more output signals responsive to the detected energy; and processingthe one or more output signals to determine a first property and asecond property of the specimen, wherein the first property comprises acritical dimension of the specimen, and wherein the second propertycomprises overlay misregistration of the specimen.
 182. The method ofclaim 181, further comprising controlling the stage, wherein the stageis configured to support the specimen.
 183. The method of claim 181,further comprising controlling the stage to move laterally during saiddirecting energy and said detecting energy.
 184. The method of claim181, further comprising controlling the stage to move rotatably duringsaid directing energy and said detecting energy.
 185. The method ofclaim 181, further comprising controlling the stage to move laterallyand rotatably during said directing energy and said detecting energy.186. The method of claim 181, wherein the illumination system comprisesa single energy source.
 187. The method of claim 181, wherein theillumination system comprises more than one energy source.
 188. Themethod of claim 181, wherein the detection system comprises a singleenergy sensitive device.
 189. The method of claim 181, wherein thedetection system comprises more than one energy sensitive devices. 190.The method of claim 181, wherein the measurement device furthercomprises a non-imaging scatterometer.
 191. The method of claim 181,wherein the measurement device further comprises a scatterometer. 192.The method of claim 181, wherein the measurement device furthercomprises a spectroscopic scatterometer.
 193. The method of claim 181,wherein the measurement device further comprises a reflectometer. 194.The method of claim 181, wherein the measurement device furthercomprises a spectroscopic reflectometer.
 195. The method of claim 181,wherein the measurement device further comprises an ellipsometer. 196.The method of claim 181, wherein the measurement device furthercomprises a spectroscopic ellipsometer.
 197. The method of claim 181,wherein the measurement device further comprises a bright field imagingdevice.
 198. The method of claim 181, wherein the measurement devicefurther comprises a dark field imaging device.
 199. The method of claim181, wherein the measurement device further comprises a bright field anddark field imaging device.
 200. The method of claim 181, wherein themeasurement device further comprises a bright field non-imaging device.201. The method of claim 181, wherein the measurement device furthercomprises a dark field non-imaging device.
 202. The method of claim 181,wherein the measurement device further comprises a bright field and darkfield non-imaging device.
 203. The method of claim 181, wherein themeasurement device further comprises a coherence probe microscope. 204.The method of claim 181, wherein the measurement device furthercomprises an interference microscope.
 205. The method of claim 181,wherein the measurement device further comprises an opticalprofilometer.
 206. The method of claim 181, wherein the measurementdevice further comprises at least a first measurement device and asecond measurement device, and wherein the first and second measurementdevices are selected from the group consisting of a non-imagingscatterometer, a scatterometer, a spectroscopic scatterometer, areflectometer, a spectroscopic reflectometer, an ellipsometer, aspectroscopic ellipsometer, a bright field imaging device, a dark fieldimaging device, a bright field and dark field imaging device, a brightfield non-imaging device, a dark field non-imaging device, a brightfield and dark field non-imaging device, a coherence probe microscope,an interference microscope, and an optical profilometer.
 207. The methodof claim 181, wherein the measurement device further comprises at leasta first measurement device and a second measurement device, and whereinoptical elements of the first measurement device comprise opticalelements of the second measurement device.
 208. The method of claim 181,further comprising processing the one or more output signals todetermine a third property of the specimen, wherein the third propertycomprises a presence of defects on the specimen.
 209. The method ofclaim 208, wherein the defects comprise micro defects and macro defects.210. The method of claim 208, further comprising: controlling theillumination system to direct energy toward a bottom surface of thespecimen; and controlling the detection system to detect energypropagating from the bottom surface of the specimen, wherein the thirdproperty further comprises a presence of defects on the bottom surfaceof the specimen.
 211. The method of claim 210, wherein the defectscomprise macro defects.
 212. The method of claim 181, further comprisingprocessing the one or more output signals to determine a third propertyof the specimen, wherein the third property comprises a flatnessmeasurement of the specimen.
 213. The method of claim 181, furthercomprising processing the one or more output signals to determine athird property and a fourth property of the specimen, wherein the thirdproperty comprises a presence of defects on the specimen, and whereinthe fourth property comprises a flatness measurement of the specimen.214. The method of claim 181, further comprising processing the one ormore output signals to determine a third property of the specimen,wherein the third property is selected from the group consisting of aroughness of the specimen, a roughness of a layer on the specimen, and aroughness of a feature of the specimen.
 215. The method of claim 214,wherein the stage and the measurement device are coupled to a processtool selected from the group consisting of a lithography tool, an atomiclayer deposition tool, a cleaning tool, and an etch tool.
 216. Themethod of claim 181, wherein processing the one or more output signalsto determine the first and second properties of the specimen comprisessubstantially simultaneously determining the first and second propertiesof the specimen.
 217. The method of claim 181, further comprisingcontrolling the illumination system to direct energy toward multiplelocations on the surface of the specimen substantially simultaneouslyand controlling the detection system to detect energy propagating fromthe multiple locations substantially simultaneously such that one ormore of the at least two properties of the specimen can be determined atthe multiple locations substantially simultaneously.
 218. The method ofclaim 181, wherein the stage and the measurement device are coupled to aprocess tool.
 219. The method of claim 181, wherein the stage and themeasurement device are coupled to a process tool, and wherein the stageand the measurement device are arranged laterally proximate to theprocess tool.
 220. The method of claim 181, wherein the stage and themeasurement device are coupled to a process tool, and wherein the stageand the measurement device are disposed within the process tool. 221.The method of claim 181, wherein the stage and the measurement deviceare coupled to a process tool, and wherein the process tool comprises alithography tool.
 222. The method of claim 181, wherein the stage andthe measurement device are coupled to a process tool, the method furthercomprising controlling a wafer handler to move the specimen from theprocess tool to the stage, and wherein the wafer handler is coupled tothe process tool.
 223. The method of claim 181, wherein the stage andthe measurement device are coupled to a process tool, the method furthercomprising controlling the stage to move the specimen from the system tothe process tool.
 224. The method of claim 181, wherein the stage andthe measurement device are coupled to a process tool, the method furthercomprising controlling a wafer handler to move the specimen from theprocess tool to the stage such that at least the two properties of thespecimen can be determined while the specimen is waiting between processsteps.
 225. The method of claim 181, wherein the stage and themeasurement device are coupled to a process tool, wherein the processtool comprises a support device configured to support the specimenduring a process step, and wherein an upper surface of the supportdevice is substantially parallel to an upper surface of the stage. 226.The method of claim 181, wherein the stage and the measurement deviceare coupled to a process tool, wherein the process tool comprises asupport device configured to support the specimen during a process step,and wherein an upper surface of the stage is angled with respect to anupper surface of the support device.
 227. The method of claim 181,wherein the stage and the measurement device are disposed within ameasurement chamber, and wherein the measurement chamber is coupled to aprocess tool.
 228. The method of claim 181, wherein the stage and themeasurement device are disposed within a measurement chamber, whereinthe measurement chamber is coupled to a process tool, and wherein themeasurement chamber is disposed within the process tool.
 229. The methodof claim 181, wherein the stage and the measurement device are disposedwithin a measurement chamber, wherein the measurement chamber is coupledto a process tool, and wherein the measurement chamber is arrangedlaterally proximate to a process chamber of the process tool.
 230. Themethod of claim 181, wherein the stage and the measurement device aredisposed within a measurement chamber, wherein the measurement chamberis coupled to a process tool, and wherein the measurement chamber isarranged vertically proximate to a process chamber of the process tool.231. The method of claim 181, wherein the stage comprises a supportdevice disposed within a process chamber of a process tool, and whereinthe support device is configured to support the specimen during aprocess step.
 232. The method of claim 231, further comprisingcontrolling the illumination system and controlling the detection systemduring the process step.
 233. The method of claim 231, furthercomprising controlling the system to obtain a signature characterizingthe process step, wherein the signature comprises at least onesingularity representative of an end of the process step.
 234. Themethod of claim 231, further comprising controlling the system to altera parameter of one or more instruments coupled to the process tool inresponse to the determined properties using an in situ controltechnique.
 235. The method of claim 181, further comprising controllingthe stage to move the specimen from a first process chamber to a secondprocess chamber, wherein the first process chamber and the secondprocess chamber are disposed within a process tool.
 236. The method ofclaim 235, further comprising controlling the illumination system andcontrolling the detection system during said moving the specimen fromthe first process chamber to the second process chamber.
 237. The methodof claim 235, wherein the process tool comprises a lithography tool.238. The method of claim 237, further comprising: chilling the specimenin the first process chamber; and applying resist to the specimen in thesecond process chamber.
 239. The method of claim 237, furthercomprising: chilling the specimen in the first process chambersubsequent to a post apply bake process step; and exposing the specimenin the second process chamber.
 240. The method of claim 237, furthercomprising: exposing the specimen in the first process chamber; andbaking the specimen subsequent to exposure of the specimen in the secondprocess chamber.
 241. The method of claim 237, further comprising:chilling the specimen in the first process chamber subsequent to a postexposure bake process step; and developing the specimen in the secondprocess chamber.
 242. The method of claim 237, further comprising:developing the specimen in the first process chamber; and baking thespecimen in the second process chamber subsequent to a develop processstep.
 243. The method of claim 237, further comprising: developing thespecimen in the first process chamber; and receiving the specimen in awafer cassette in the second process chamber.
 244. The method of claim181, further comprising comparing at least one of the determinedproperties of the specimen and determined properties of a plurality ofspecimens.
 245. The method of claim 181, further comprising comparing atleast one of the determined properties of the specimen to apredetermined range for the property.
 246. The method of claim 245,further comprising generating an output signal if the determinedproperty of the specimen is outside of the predetermined range.
 247. Themethod of claim 181, further comprising altering a sampling frequency ofthe measurement device in response to the determined first or secondproperties of the specimen.
 248. The method of claim 181, furthercomprising altering a parameter of one or more instruments coupled tothe measurement device in response to the determined first or secondproperty using a feedback control technique.
 249. The method of claim181, further comprising altering a parameter of one or more instrumentscoupled to the measurement device in response to the determined first orsecond property using a feedforward control technique.
 250. The methodof claim 181, further comprising generating a database, wherein thedatabase comprises the determined first and second properties of thespecimen.
 251. The method of claim 250, further comprising calibratingthe measurement device using the database.
 252. The method of claim 250,further comprising monitoring output signals of the measurement deviceusing the database.
 253. The method of claim 250, wherein the databasefurther comprises first and second properties of a plurality ofspecimens.
 254. The method of claim 253, wherein the first and secondproperties of the plurality of specimens are generated using a pluralityof measurement devices.
 255. The method of claim 254, further comprisingcalibrating the plurality of measurement devices using the database.256. The method of claim 254, further comprising monitoring outputsignals of the plurality of measurement devices using the database. 257.The method of claim 181, wherein a stand alone system is coupled to thesystem, the method further comprising controlling the stand alone systemto calibrate the stand alone system with a calibration standard andfurther controlling the stand alone system to calibrate the system. 258.The method of claim 181, wherein a stand alone system is coupled to thesystem and at least one additional system, the method further comprisingcontrolling the stand alone system to calibrate the stand alone systemwith a calibration standard and further controlling the stand alonesystem to calibrate the system and at least the one additional system.259. The method of claim 18 1, wherein the system is further configuredto determine at least the two properties of the specimen at more thanone position on the specimen, and wherein the specimen comprises awafer, the method further comprising altering at least one parameter ofone or more instruments coupled to a process tool in response to atleast one of the determined properties of the specimen at the more thanone position on the specimen to reduce within wafer variation of atleast one of the determined properties.
 260. The method of claim 181,further comprising altering a parameter of one or more instrumentscoupled to a process tool in response to the determined first or secondproperty of the specimen.
 261. The method of claim 181, furthercomprising altering a parameter of one or more instruments coupled to aprocess tool in response to the determined first or second property ofthe specimen using a feedback control technique.
 262. The method ofclaim 181, further comprising altering a parameter of one or moreinstruments coupled to a process tool in response to the determinedfirst or second property of the specimen using a feedforward controltechnique.
 263. The method of claim 181, further comprising monitoring aparameter of one or more instruments coupled to the process tool. 264.The method of claim 181, further comprising monitoring a parameter ofone or more instruments coupled to the process tool and determining arelationship between the determined properties and at least one of themonitored parameters.
 265. The method of claim 181, further comprisingmonitoring a parameter of one or more instruments coupled to the processtool, determining a relationship between the determined properties andat least one of the monitored parameters, and altering the parameter ofat least one of the instruments in response to the relationship. 266.The method of claim 181, further comprising altering a parameter of oneor more instruments coupled to a plurality of process tools in responseto the determined first or second property of the specimen.
 267. Themethod of claim 181, wherein processing the one or more output signalscomprises: at least partially processing the one or more output signalsusing a local processor, wherein the local processor is coupled to themeasurement device; sending the partially processed one or more outputsignals from the local processor to a remote controller computer; andfurther processing the partially processed one or more output signalsusing the remote controller computer.
 268. The method of claim 267,wherein at least partially processing the one or more output signalscomprises determining the first and second properties of the specimen.269. The method of claim 267, wherein further processing the partiallyprocessed one or more output signals comprises determining the first andsecond properties of the specimen.
 270. A semiconductor devicefabricated by a method, the method comprising: forming a portion of thesemiconductor device upon a specimen; disposing the specimen upon astage, wherein the stage is coupled to a measurement device, and whereinthe measurement device comprises an illumination system and a detectionsystem; directing energy toward a surface of the specimen using theillumination system; detecting energy propagating from the surface ofthe specimen using the detection system; generating one or more outputsignals responsive to the detected energy; and processing the one ormore output signals to determine a first property and a second propertyof the portion of the semiconductor device, wherein the first propertycomprises a critical dimension of the portion of the semiconductordevice, and wherein the second property comprises overlaymisregistration of the portion of the semiconductor device.
 271. Thedevice of claim 270, wherein the illumination system comprises a singleenergy source.
 272. The device of claim 270, wherein the illuminationsystem comprises more than one energy source.
 273. The device of claim270, wherein the detection system comprises a single energy sensitivedevice.
 274. The device of claim 270, wherein the detection systemcomprises more than one energy sensitive devices.
 275. The device ofclaim 270, wherein the measurement device is selected from the groupconsisting of a non-imaging scatterometer, a scatterometer, aspectroscopic scatterometer, a reflectometer, a spectroscopicreflectometer, an ellipsometer, a spectroscopic ellipsometer, a brightfield imaging device, a dark field imaging device, a bright field anddark field imaging device, a bright field non-imaging device, a darkfield non-imaging device, a bright field and dark field non-imagingdevice, a coherence probe microscope, an interference microscope, and anoptical profilometer.
 276. The device of claim 270, wherein themeasurement device further comprises at least a first measurement deviceand a second measurement device, and wherein the first and secondmeasurement devices are selected from the group consisting of anon-imaging scatterometer, a scatterometer, a spectroscopicscatterometer, a reflectometer, a spectroscopic reflectometer, anellipsometer, a spectroscopic ellipsometer, a bright field imagingdevice, a dark field imaging device, a bright field and dark fieldimaging device, a bright field non-imaging device, a dark fieldnon-imaging device, a bright field and dark field non-imaging device, acoherence probe microscope, an interference microscope, and an opticalprofilometer.
 277. The device of claim 270, wherein the measurementdevice further comprises at least a first measurement device and asecond measurement device, and wherein optical elements of the firstmeasurement device comprise optical elements of the second measurementdevice.
 278. The device of claim 270, further comprising processing theone or more output signals to determine a third property of thespecimen, wherein the third property comprises a presence of defects onthe specimen.
 279. The device of claim 278, wherein the defects comprisemicro defects and macro defects.
 280. The device of claim 278, furthercomprising: directing energy toward a bottom surface of the specimen;and detecting energy propagating from the bottom surface of thespecimen, wherein the third property further comprises a presence ofdefects on the bottom surface of the specimen.
 281. The device of claim280, wherein the defects comprise macro defects.
 282. The device ofclaim 270, further comprising processing the one or more output signalsto determine a third property of the specimen, wherein the thirdproperty comprises a flatness measurement of the specimen.
 283. Thedevice of claim 270, further comprising processing the one or moreoutput signals to determine a third property and a fourth property ofthe specimen, wherein the third property comprises a presence of defectson the specimen, and wherein the fourth property comprises a flatnessmeasurement of the specimen.
 284. The device of claim 270, furthercomprising processing the one or more output signals to determine athird property of the specimen, wherein the third property is selectedfrom the group consisting of a roughness of the specimen, a roughness ofa layer on the specimen, and a roughness of a feature of the specimen.285. The device of claim 284, wherein the stage and the measurementdevice are coupled to a process tool selected from the group consistingof a lithography tool, an atomic layer deposition tool, a cleaning tool,and an etch tool.
 286. The device of claim 270, wherein the stage andthe measurement device are coupled to a process tool.
 287. The device ofclaim 270, wherein the stage and the measurement device are coupled to alithography tool.
 288. A method for fabricating a semiconductor device,comprising: forming a portion of the semiconductor device upon aspecimen; disposing the specimen upon a stage, wherein the stage iscoupled to a measurement device, and wherein the measurement devicecomprises an illumination system and a detection system; directingenergy toward a surface of the specimen using the illumination system;detecting energy propagating from the surface of the specimen using thedetection system; generating one or more output signals responsive tothe detected energy; and processing the one or more output signals todetermine a first property and a second property of the portion of thesemiconductor device, wherein the first property comprises a criticaldimension of the portion of the semiconductor device, and wherein thesecond property comprises overlay misregistration of the portion of thesemiconductor device.
 289. The method of claim 288, wherein theillumination system comprises a single energy source.
 290. The method ofclaim 288, wherein the illumination system comprises more than oneenergy source.
 291. The method of claim 288, wherein the detectionsystem comprises a single energy sensitive device.
 292. The method ofclaim 288, wherein the detection system comprises more than one energysensitive devices.
 293. The method of claim 288, wherein the measurementdevice is selected from the group consisting of a non-imagingscatterometer, a scatterometer, a spectroscopic scatterometer, areflectometer, a spectroscopic reflectometer, an ellipsometer, aspectroscopic ellipsometer, a bright field imaging device, a dark fieldimaging device, a bright field and dark field imaging device, a brightfield non-imaging device, a dark field non-imaging device, a brightfield and dark field non-imaging device, a coherence probe microscope,an interference microscope, and an optical profilometer.
 294. The methodof claim 288, wherein the measurement device further comprises at leasta first measurement device and a second measurement device, and whereinthe first and second measurement devices are selected from the groupconsisting of a non-imaging scatterometer, a scatterometer, aspectroscopic scatterometer, a reflectometer, an ellipsometer, aspectroscopic ellipsometer, a bright field imaging device, a dark fieldimaging device, a bright field and dark field imaging device, a brightfield non-imaging device, a dark field non-imaging device, a brightfield and dark field non-imaging device, a coherence probe microscope,an interference microscope, and an optical profilometer.
 295. The methodof claim 288, wherein the measurement device further comprises at leasta first measurement device and a second measurement device, and whereinoptical elements of the first measurement device comprise opticalelements of the second measurement device.
 296. The method of claim 288,further comprising processing the one or more output signals todetermine a third property of the specimen, wherein the third propertycomprises a presence of defects on the specimen.
 297. The method ofclaim 296, wherein the defects comprise micro defects and macro defects.298. The method of claim 296, further comprising: directing energytoward a bottom surface of the specimen; and detecting energypropagating from the bottom surface of the specimen, wherein the thirdproperty further comprises a presence of defects on the bottom surfaceof the specimen.
 299. The method of claim 298, wherein the defectscomprise macro defects.
 300. The method of claim 288, further comprisingprocessing the one or more output signals to determine a third propertyof the specimen, wherein the third property comprises a flatnessmeasurement of the specimen.
 301. The method of claim 288, furthercomprising processing the one or more output signals to determine athird property and a fourth property of the specimen, wherein the thirdproperty comprises a presence of defects on the specimen, and whereinthe fourth property comprises a flatness measurement of the specimen.302. The method of claim 288, further comprising processing the one ormore output signals to determine a third property of the specimen,wherein the third property is selected from the group consisting of aroughness of the specimen, a roughness of a layer on the specimen, and aroughness of a feature of the specimen.
 303. The method of claim 302,wherein the stage and the measurement device are coupled to a processtool selected from the group consisting of a lithography tool, an atomiclayer deposition tool, a cleaning tool, and an etch tool.
 304. Themethod of claim 288, wherein the stage and the measurement device arecoupled to a process tool.
 305. The method of claim 288, wherein thestage and the measurement device are coupled to a lithography tool. 306.A system configured to determine at least two properties of a specimenduring use, comprising: a stage configured to support the specimenduring use; a measurement device coupled to the stage, comprising: anillumination system configured to direct energy toward a surface of thespecimen during use; and a detection system coupled to the illuminationsystem and configured to detect energy propagating from the surface ofthe specimen during use, wherein the measurement device is configured togenerate one or more output signals in response to the detected energyduring use; a local processor coupled to the measurement device andconfigured to at least partially process the one or more output signalsduring use; and a remote controller computer coupled to the localprocessor, wherein the remote controller computer is configured toreceive the at least partially processed one or more output signals andto determine a first property and a second property of the specimen fromthe at least partially processed one or more output signals during use,wherein the first property comprises a critical dimension of thespecimen, and wherein the second property comprises overlaymisregistration of the specimen.
 307. The system of claim 306, whereinthe measurement device is selected from the group consisting of anon-imaging scatterometer, a scatterometer, a spectroscopicscatterometer, a reflectometer, a spectroscopic reflectometer, anellipsometer, a spectroscopic ellipsometer, a bright field imagingdevice, a dark field imaging device, a bright field and dark fieldimaging device, a bright field non-imaging device, a dark fieldnon-imaging device, a bright field and dark field non-imaging device, acoherence probe microscope, an interference microscope, and an opticalprofilometer.
 308. The system of claim 306, wherein the measurementdevice further comprises at least a first measurement device and asecond measurement device, and wherein the first and second measurementdevices are selected from the group consisting of a non-imagingscatterometer, a scatterometer, a spectroscopic scatterometer, areflectometer, an ellipsometer, a spectroscopic ellipsometer, a brightfield imaging device, a dark field imaging device, a bright field anddark field imaging device, a bright field non-imaging device, a darkfield non-imaging device, a bright field and dark field non-imagingdevice, a coherence probe microscope, an interference microscope, and anoptical profilometer.
 309. The system of claim 306, wherein themeasurement device further comprises at least a first measurement deviceand a second measurement device, and wherein the illumination system ofthe first measurement device comprises the illumination system of thesecond measurement device.
 310. The system of claim 306, wherein themeasurement device further comprises at least a first measurement deviceand a second measurement device, and wherein the detection system of thefirst measurement device comprises the detection system of the secondmeasurement device.
 311. The system of claim 306, wherein the remotecontroller computer is further configured to determine a third propertyof the specimen from the at least partially processed one or more outputsignals during use, and wherein the third property comprises a presenceof defects on the specimen.
 312. The system of claim 311, wherein thedefects comprise micro defects and macro defects.
 313. The system ofclaim 311, wherein the illumination system is further configured todirect energy toward a bottom surface of the specimen during use,wherein the detection system is further configured to detect energypropagating from the bottom surface of the specimen during use, andwherein the third property further comprises a presence of defects onthe bottom surface of the specimen.
 314. The system of claim 313,wherein the defects comprise macro defects.
 315. The system of claim306, wherein the remote controller computer is further configured todetermine a third property of the specimen from the at least partiallyprocessed one or more output signals during use, and wherein the thirdproperty comprises a flatness measurement of the specimen.
 316. Thesystem of claim 306, wherein the remote controller computer is furtherconfigured to determine a third property and a fourth property of thespecimen from the at least partially processed one or more outputsignals during use, wherein the third property comprises a presence ofdefects on the specimen, and wherein the fourth property comprises aflatness measurement of the specimen.
 317. The system of claim 306,wherein the remote controller computer is further configured todetermine a third property of the specimen from the at least partiallyprocessed one or more output signals during use, and wherein the thirdproperty is selected from the group consisting of a roughness of thespecimen, a roughness of a layer on the specimen, and a roughness of afeature of the specimen.
 318. The system of claim 317, wherein thesystem is coupled to a process tool selected from the group consistingof a lithography tool, an atomic layer deposition tool, a cleaning tool,and an etch tool.
 319. The system of claim 306, wherein the illuminationsystem is further configured to direct energy to multiple locations onthe surface of the specimen substantially simultaneously, and whereinthe detection system is further configured to detect energy propagatingfrom the multiple locations on the surface of the specimen substantiallysimultaneously such that one or more of the at least two properties ofthe specimen can be determined at the multiple locations substantiallysimultaneously.
 320. The system of claim 306, wherein the remotecontroller computer is coupled to a process tool.
 321. The system ofclaim 320, wherein the process tool comprises a lithography tool. 322.The system of claim 320, wherein the remote controller computer isfurther configured to alter a parameter of one or more instrumentscoupled to the process tool in response to the determined first orsecond property using a feedback control technique during use.
 323. Thesystem of claim 320, wherein the remote controller computer is furtherconfigured to alter a parameter of one or more instruments coupled tothe process tool in response to the determined first or second propertyusing a feedforward control technique during use.
 324. The system ofclaim 320, wherein the remote controller computer is further configuredto monitor a parameter of one or more instruments coupled to the processtool during use.
 325. The system of claim 324, wherein the remotecontroller computer is further configured to determine a relationshipbetween the determined properties and at least one of the monitoredparameters during use.
 326. The system of claim 325, wherein the remotecontroller computer is further configured to alter the parameter of atleast one of the instruments in response to the relationship during use.327. The system of claim 320, wherein the illumination system is furtherconfigured to direct energy toward the surface of the specimen during aprocess step, wherein the detection system is further configured todetect energy propagating from the surface of the specimen during theprocess step, and wherein the remote controller computer is furtherconfigured to determine the first and second properties of the specimenduring the process step.
 328. The system of claim 327, wherein theremote controller computer is further configured to obtain a signaturecharacterizing the process step during use, and wherein the signaturecomprises at least one singularity representative of an end of theprocess step.
 329. The system of claim 327, wherein the remotecontroller computer is further configured to alter a parameter of one ormore instruments coupled to the process tool in response to thedetermined first or second property using an in situ control techniqueduring use.
 330. The system of claim 306, wherein a process toolcomprises a first process chamber and a second process chamber, andwherein the stage is further configured to move the specimen from thefirst process chamber to the second process chamber during use.
 331. Thesystem of claim 330, wherein the illumination system is furtherconfigured to direct energy toward the surface of the specimen duringsaid moving, wherein the detection system is further configured todetect energy propagating from the surface of the specimen during saidmoving, and wherein the remote controller computer is further configuredto determine the first and second properties of the specimen during saidmoving.
 332. The system of claim 306, wherein the remote controllercomputer is further configured to compare at least one of the determinedproperties of the specimen and properties of a plurality of specimensduring use.
 333. The system of claim 306, wherein the remote controllercomputer is further configured to compare at least one of the determinedproperties of the specimen to a predetermined range for the propertyduring use.
 334. The system of claim 333, wherein the remote controllercomputer is further configured to generate an output signal if at leastone of the determined properties of the specimen is outside of thepredetermined range for the property during use.
 335. The system ofclaim 306, wherein the remote controller computer is further configuredto alter a sampling frequency of the measurement device in response tothe determined first or second property of the specimen during use. 336.The system of claim 306, wherein the remote controller computer isfurther configured to alter a parameter of one or more instrumentscoupled to the measurement device in response to the determined first orsecond property using a feedback control technique during use.
 337. Thesystem of claim 306, wherein the remote controller computer is furtherconfigured to alter a parameter of one or more instruments coupled tothe measurement device in response to the determined first or secondproperty using a feedforward control technique during use.
 338. Thesystem of claim 306, wherein the remote controller computer is furtherconfigured to generate a database during use, wherein the databasecomprises the determined first and second properties of the specimen.339. The system of claim 338, wherein the remote controller computer isfurther configured to calibrate the measurement device using thedatabase during use.
 340. The system of claim 338, wherein the remotecontroller computer is further configured to monitor output signalsgenerated by measurement device using the database during use.
 341. Thesystem of claim 338, wherein the database further comprises first andsecond properties of a plurality of specimens.
 342. The system of claim341, wherein the first and second properties of the plurality ofspecimens are determined using a plurality of measurement devices. 343.The system of claim 342, wherein the remote controller computer isfurther coupled to the plurality of measurement devices.
 344. The systemof claim 343, wherein the remote controller computer is furtherconfigured to calibrate the plurality of measurement devices using thedatabase during use.
 345. The system of claim 343, wherein the remotecontroller computer is further configured to monitor output signalsgenerated by the plurality of measurement devices using the databaseduring use.
 346. The system of claim 343, wherein each of the pluralityof measurement devices is coupled to at least one of a plurality ofprocess tools.
 347. A method for determining at least two properties ofa specimen, comprising: disposing the specimen upon a stage, wherein thestage is coupled to a measurement device, and wherein the measurementdevice comprises an illumination system and a detection system;directing energy toward a surface of the specimen using the illuminationsystem; detecting energy propagating from the surface of the specimenusing the detection system; generating one or more output signals inresponse to the detected energy; and processing the one or more outputsignals to determine a first property and a second property of thespecimen, wherein the first property comprises a critical dimension ofthe specimen, and wherein the second property comprises overlaymisregistration of the specimen, wherein processing the one or moreoutput signals comprises: at least partially processing the one or moreoutput signals using a local processor, wherein the local processor iscoupled to the measurement device; sending the partially processed oneor more output signals from the local processor to a remote controllercomputer; and further processing the partially processed one or moreoutput signals using the remote controller computer.
 348. The method ofclaim 347, wherein the measurement device is selected from the groupconsisting of a non-imaging scatterometer, a scatterometer, aspectroscopic scatterometer, a reflectometer, a spectroscopicreflectometer, an ellipsometer, a spectroscopic ellipsometer, a brightfield imaging device, a dark field imaging device, a bright field anddark field imaging device, a bright field non-imaging device, a darkfield non-imaging device, a bright field and dark field non-imagingdevice, a coherence probe microscope, an interference microscope, and anoptical profilometer.
 349. The method of claim 347, wherein themeasurement device further comprises at least a first measurement deviceand a second measurement device, and wherein the first and secondmeasurement devices are selected from the group consisting of anon-imaging scatterometer, a scatterometer, a spectroscopicscatterometer, a reflectometer, a spectroscopic reflectometer, anellipsometer, a spectroscopic ellipsometer, a bright field imagingdevice, a dark field imaging device, a bright field and dark fieldimaging device, a bright field non-imaging device, a dark fieldnon-imaging device, a bright field and dark field non-imaging device, acoherence probe microscope, an interference microscope, and an opticalprofilometer.
 350. The method of claim 347, wherein the measurementdevice further comprises at least a first measurement device and asecond measurement device, and wherein an illumination system of thefirst measurement device comprises an illumination system of the secondmeasurement device.
 351. The method of claim 347, wherein themeasurement device further comprises at least a first measurement deviceand a second measurement device, and wherein a detection system of thefirst measurement device comprises a detection system of the secondmeasurement device.
 352. The method of claim 347, further comprisingprocessing the one or more output signals to determine a third propertyof the specimen, wherein the third property comprises a presence ofdefects on the specimen.
 353. The method of claim 352, wherein thedefects comprise micro defects and macro defects.
 354. The method ofclaim 352, further comprising: directing energy toward a bottom surfaceof the specimen; and detecting energy propagating from the bottomsurface of the specimen, wherein the third property further comprises apresence of defects on the bottom surface of the specimen.
 355. Themethod of claim 354, wherein the defects comprise macro defects. 356.The method of claim 347, further comprising processing the one or moreoutput signals to determine a third property of the specimen, whereinthe third property comprises a flatness measurement of the specimen.357. The method of claim 347, further comprising processing the one ormore output signals to determine a third property and a fourth propertyof the specimen, wherein the third property comprises a presence ofdefects on the specimen, and wherein the fourth property comprises aflatness measurement of the specimen.
 358. The method of claim 347,further comprising processing the one or more output signals todetermine a third property of the specimen, wherein the third propertyis selected from the group consisting of a roughness of the specimen, aroughness of a layer on the specimen, and a roughness of a feature ofthe specimen.
 359. The method of claim 358, wherein the stage and themeasurement device are coupled to a process tool selected from the groupconsisting of a lithography tool, an atomic layer deposition tool, acleaning tool, and an etch tool.
 360. The method of claim 347, furthercomprising directing energy toward multiple locations on the surface ofthe specimen substantially simultaneously and detecting energypropagating from the multiple locations substantially simultaneouslysuch that one or more of the at least two properties of the specimen canbe determined at the multiple locations substantially simultaneously.361. The method of claim 347, wherein the remote controller computer iscoupled to a process tool.
 362. The method of claim 361, wherein theprocess tool comprises a lithography tool.
 363. The method of claim 361,further comprising altering a parameter of one or more instrumentscoupled to the process tool using the remote controller computer inresponse to the determined first or second property of the specimenusing a feedback control technique.
 364. The method of claim 361,further comprising altering a parameter of one or more instrumentscoupled to the process tool using the remote controller computer inresponse to the determined first or second property of the specimenusing a feedforward control technique.
 365. The method of claim 361,further comprising monitoring a parameter of one or more instrumentscoupled to the process tool using the remote controller computer. 366.The method of claim 365, further comprising determining a relationshipbetween the determined properties and at least one of the monitoredparameters using the remote controller computer.
 367. The method ofclaim 366, further comprising altering a parameter of at least one ofthe instruments in response to the relationship using the remotecontroller computer.
 368. The method of claim 361, wherein theillumination system and the detection system are coupled to a processchamber of the process tool, further comprising performing saiddirecting and said detecting during a process step.
 369. The method ofclaim 368, further comprising obtaining a signature characterizing theprocess step using the remote controller computer, wherein the signaturecomprises at least one singularity representative of an end of theprocess step.
 370. The method of claim 368, further comprising alteringa parameter of one or more instruments coupled to the process tool usingthe remote controller computer in response to the determined first orsecond property using an in situ control technique.
 371. The method ofclaim 347, further comprising: moving the specimen from a first processchamber to a second process chamber using the stage; performing saiddirecting and said detecting during said moving the specimen.
 372. Themethod of claim 347, further comprising comparing at least one of thedetermined properties of the specimen and determined properties of aplurality of specimens using the remote controller computer.
 373. Themethod of claim 347, further comprising comparing at least one of thedetermined properties of the specimen to a predetermined range for theproperty using the remote controller computer.
 374. The method of claim373, further comprising generating an output signal using the remotecontroller computer if at least one of the determined properties of thespecimen is outside of the predetermined range for the property. 375.The method of claim 347, wherein the remote controller computer iscoupled to the measurement device.
 376. The method of claim 375, furthercomprising altering a sampling frequency of the measurement device usingthe remote controller computer in response to the determined first orsecond property of the specimen.
 377. The method of claim 375, furthercomprising altering a parameter of one or more instruments coupled tothe measurement device using the remote controller computer in responseto the determined first or second property using a feedback controltechnique.
 378. The method of claim 375, further comprising altering aparameter of one or more instruments coupled to the measurement deviceusing the remote controller computer in response to the determined firstor second property using a feedforward control technique.
 379. Themethod of claim 347, further comprising generating a database using theremote controller computer, wherein the database comprises thedetermined first and second properties of the specimen.
 380. The methodof claim 379, further comprising calibrating the measurement deviceusing the database and the remote controller computer.
 381. The methodof claim 379, further comprising monitoring output signals of themeasurement device using the remote controller computer.
 382. The methodof claim 379, wherein the database further comprises first and secondproperties of a plurality of specimens.
 383. The method of claim 382,wherein the first and second properties of the plurality of specimensare generated using a plurality of measurement devices.
 384. The methodof claim 383, further comprising calibrating the plurality ofmeasurement devices using the remote controller computer.
 385. Themethod of claim 383, further comprising monitoring output signals of theplurality of measurement devices using the remote controller computer.386. The method of claim 347, further comprising sending the at leastpartially processed one or more output signals from a plurality of localprocessors to the remote controller computer, wherein each of theplurality of local processors is coupled to one of a plurality ofmeasurement devices.
 387. The method of claim 386, further comprisingaltering a parameter of one or more instruments coupled to at least oneof the plurality of measurement devices using the remote controllercomputer in response to the determined first or second property of thespecimen.
 388. The method of claim 386, wherein each of the plurality ofmeasurement devices is coupled to at least one of a plurality of processtools.
 389. The method of claim 388, further comprising altering aparameter of one or more instruments coupled to at least one of theplurality of process tools using the remote controller computer inresponse to the determined first or second property of the specimen.390. A system configured to determine at least two properties of aspecimen during use, comprising: a stage configured to support thespecimen during use; a measurement device coupled to the stage,comprising: an illumination system configured to direct energy toward asurface of the specimen during use; and a detection system coupled tothe illumination system and configured to detect energy propagating fromthe surface of the specimen during use, wherein the measurement deviceis configured to generate one or more output signals in response to thedetected energy during use; and a processor coupled to the measurementdevice and configured to determine a first property and a secondproperty of the specimen from the one or more output signals during use,wherein the first property comprises a presence of defects on thespecimen, and wherein the second property comprises a thin filmcharacteristic of the specimen.
 391. The system of claim 390, whereinthe stage is further configured to move laterally during use.
 392. Thesystem of claim 390, wherein the stage is further configured to moverotatably during use.
 393. The system of claim 390, wherein the stage isfurther configured to move laterally and rotatably during use.
 394. Thesystem of claim 390, wherein the illumination system comprises a singleenergy source.
 395. The system of claim 390, wherein the illuminationsystem comprises more than one energy source.
 396. The system of claim390, wherein the detection system comprises a single energy sensitivedevice.
 397. The system of claim 390, wherein the detection systemcomprises more than one energy sensitive device.
 398. The system ofclaim 390, wherein the measurement device further comprises anon-imaging dark field device.
 399. The system of claim 390, wherein themeasurement device further comprises a non-imaging bright field device.400. The system of claim 390, wherein the measurement device furthercomprises a non-imaging dark field and bright field device.
 401. Thesystem of claim 390, wherein the measurement device further comprises adouble dark field device.
 402. The system of claim 390, wherein themeasurement device further comprises a dark field imaging device. 403.The system of claim 390, wherein the measurement device furthercomprises a bright field imaging device.
 404. The system of claim 390,wherein the measurement device further comprises a dark field and brightfield imaging device.
 405. The system of claim 390, wherein themeasurement device further comprises a scatterometer.
 406. The system ofclaim 390, wherein the measurement device further comprises aspectroscopic scatterometer.
 407. The system of claim 390, wherein themeasurement device further comprises an ellipsometer.
 408. The system ofclaim 390, wherein the measurement device further comprises aspectroscopic ellipsometer.
 409. The system of claim 390, wherein themeasurement device further comprises a reflectometer.
 410. The system ofclaim 390, wherein the measurement device further comprises aspectroscopic reflectometer.
 411. The system of claim 390, wherein themeasurement device further comprises a dual beam spectrophotometer. 412.The system of claim 390, wherein the measurement device furthercomprises a beam profile ellipsometer.
 413. The system of claim 390,wherein the measurement device further comprises at least a firstmeasurement device and a second measurement device, and wherein thefirst and second measurement devices are selected from the groupconsisting of a non-imaging dark field device, a non-imaging brightfield device, a non-imaging dark field and bright field device, a doubledark field device, a dark field imaging device, a bright field imagingdevice, a dark field and bright field imaging device, a scatterometer, aspectroscopic scatterometer, an ellipsometer, a spectroscopicellipsometer, a reflectometer, a spectroscopic reflectometer, a dualbeam spectrophotometer, and a beam profile ellipsometer.
 414. The systemof claim 390, wherein the measurement device further comprises at leasta first measurement device and a second measurement device, and whereinoptical elements of the first measurement device comprise opticalelements of the second measurement device.
 415. The system of claim 390,wherein the illumination system and the detection system comprisenon-optical components, and wherein the detected energy is responsive toa non-optical characteristic of the surface of the specimen.
 416. Thesystem of claim 390, wherein the defects comprise micro defects andmacro defects.
 417. The system of claim 390, wherein the defectscomprise micro defects or macro defects.
 418. The system of claim 390,wherein the thin film characteristic comprises a thickness of a copperfilm, and wherein the defects comprise voids in the copper film. 419.The system of claim 390, wherein the defects comprise macro defects on aback side of the specimen, and wherein the macro defects comprise coppercontamination.
 420. The system of claim 390, wherein the processor isfurther configured to determine a third property of the specimen fromthe one or more output signals during use, and wherein the thirdproperty is selected from the group consisting of a roughness of thespecimen, a roughness of a layer on the specimen, and a roughness of afeature of the specimen.
 421. The system of claim 420, wherein thesystem is coupled to a process tool selected from the group consistingof a lithography tool, an atomic layer deposition tool, a cleaning tool,and an etch tool.
 422. The system of claim 390, wherein the system isfurther configured to determine at least two properties of the specimensubstantially simultaneously during use.
 423. The system of claim 390,wherein the illumination system is further configured to direct energyto multiple locations on the surface of the specimen substantiallysimultaneously, and wherein the detection system is further configuredto detect energy propagating from the multiple locations on the surfaceof the specimen substantially simultaneously such that one or more ofthe at least two properties of the specimen can be determined at themultiple locations substantially simultaneously.
 424. The system ofclaim 390, wherein the system is coupled to a process tool.
 425. Thesystem of claim 390, wherein the system is coupled to a process tool,and wherein the system is disposed within the process tool.
 426. Thesystem of claim 390, wherein the system is coupled to a process tool,and wherein the system is arranged laterally proximate to the processtool.
 427. The system of claim 390, wherein the system is coupled to aprocess tool, and wherein the process tool comprises a wafer handlerconfigured to move the specimen to the stage during use.
 428. The systemof claim 390, wherein the system is coupled to a process tool, andwherein the stage is further configured to move the specimen from thesystem to the process tool during use.
 429. The system of claim 390,wherein the system is coupled to a process tool, and wherein the stageis further configured to move the specimen to a process chamber of theprocess tool during use.
 430. The system of claim 390, wherein thesystem is coupled to a process tool, and wherein the system is furtherconfigured to determine at least the two properties of the specimenwhile the specimen is waiting between process steps.
 431. The system ofclaim 390, wherein the system is coupled to a process tool, wherein theprocess tool comprises a support device configured to support thespecimen during a process step, and wherein an upper surface of thesupport device is substantially parallel to an upper surface of thestage.
 432. The system of claim 390, wherein the system is coupled to aprocess tool, wherein the process tool comprises a support deviceconfigured to support the specimen during a process step, and wherein anupper surface of the stage is angled with respect to an upper surface ofthe support device.
 433. The system of claim 390, wherein the system iscoupled to a process tool, and wherein the process tool is selected fromthe group consisting of a lithography tool, an etch tool, an ionimplanter, a chemical-mechanical polishing tool, a deposition tool, athermal tool, a cleaning tool, and a plating tool.
 434. The system ofclaim 390, wherein the system comprises a measurement chamber, whereinthe stage and the measurement device are disposed within the measurementchamber, and wherein the measurement chamber is coupled to a processtool.
 435. The system of claim 390, wherein the system comprises ameasurement chamber, wherein the stage and the measurement device aredisposed within the measurement chamber, and wherein the measurementchamber is disposed within a process tool.
 436. The system of claim 390,wherein the system comprises a measurement chamber, wherein the stageand the measurement device are disposed within the measurement chamber,and wherein the measurement chamber is arranged laterally proximate to aprocess chamber of a process tool.
 437. The system of claim 390, whereinthe system comprises a measurement chamber, wherein the stage and themeasurement device are disposed within the measurement chamber, andwherein the measurement chamber is arranged vertically proximate to aprocess chamber of a process tool.
 438. The system of claim 390, whereina process tool comprises a process chamber, wherein the stage isdisposed within the process chamber, and wherein the stage is furtherconfigured to support the specimen during a process step.
 439. Thesystem of claim 438, wherein the processor is further configured todetermine at least the two properties of the specimen during the processstep.
 440. The system of claim 439, wherein the processor is furtherconfigured to obtain a signature characterizing the process step duringuse, and wherein the signature comprises at least one singularityrepresentative of an end of the process step.
 441. The system of claim439, wherein the processor is coupled to the process tool and is furtherconfigured to alter a parameter of one or more instruments coupled tothe process tool in response to the determined properties using an insitu control technique during use.
 442. The system of claim 390, whereina process tool comprises a first process chamber and a second processchamber, and wherein the stage is further configured to move thespecimen from the first process chamber to the second process chamberduring use.
 443. The system of claim 390, wherein a process toolcomprises a first process chamber and a second process chamber, whereinthe stage is further configured to move the specimen from the firstprocess chamber to the second process chamber during use, and whereinthe system is further configured to determine at least the twoproperties of the specimen as the stage is moving the specimen from thefirst process chamber to the second process chamber.
 444. The system ofclaim 390, wherein the processor is further configured to compare atleast one of the determined properties of the specimen and properties ofa plurality of specimens during use.
 445. The system of claim 390,wherein the processor is further configured to compare at least one ofthe determined properties of the specimen to a predetermined range forthe property during use.
 446. The system of claim 445, wherein theprocessor is further configured to generate an output signal if at leastone of the determined properties of the specimen is outside of thepredetermined range for the property during use.
 447. The system ofclaim 390, wherein the processor is further configured to alter asampling frequency of the measurement device in response to thedetermined first or second property of the specimen during use.
 448. Thesystem of claim 390, wherein the processor is further configured toalter a parameter of one or more instruments coupled to the measurementdevice in response to the determined first or second property using afeedback control technique during use.
 449. The system of claim 390,wherein the processor is further configured to alter a parameter of oneor more instruments coupled to the measurement device in response to thedetermined first or second property using a feedforward controltechnique during use.
 450. The system of claim 390, wherein theprocessor is further configured to generate a database during use, andwherein the database comprises the determined first and secondproperties of the specimen.
 451. The system of claim 390, wherein theprocessor is further configured to generate a database during use,wherein the database comprises the determined first and secondproperties of the specimen, and wherein the processor is furtherconfigured to calibrate the measurement device using the database duringuse.
 452. The system of claim 390, wherein the processor is furtherconfigured to generate a database during use, wherein the databasecomprises the determined first and second properties of the specimen,and wherein the processor is further configured to monitor outputsignals generated by measurement device using the database during use.453. The system of claim 390, wherein the processor is furtherconfigured to generate a database during use, wherein the databasecomprises the determined first and second properties of the specimen,and wherein the database further comprises first and second propertiesof a plurality of specimens.
 454. The system of claim 453, wherein thefirst and second properties of the plurality of specimens are determinedusing the measurement device.
 455. The system of claim 453, wherein thefirst and second properties of the plurality of specimens are determinedusing a plurality of measurement devices.
 456. The system of claim 455,wherein the processor is further coupled to the plurality of measurementdevices.
 457. The system of claim 456, wherein the processor is furtherconfigured to calibrate the plurality of measurement devices using thedatabase during use.
 458. The system of claim 456, wherein the processoris further configured to monitor output signals generated by theplurality of measurement devices using the database during use.
 459. Thesystem of claim 390, further comprising a stand alone system coupled tothe system, wherein the stand alone system is configured to becalibrated with a calibration standard during use, and wherein the standalone system is further configured to calibrate the system during use.460. The system of claim 390, further comprising a stand alone systemcoupled the system and at least one additional system, wherein the standalone system is configured to be calibrated with a calibration standardduring use, and wherein the stand alone system is further configured tocalibrate the system and at least the one additional system during use.461. The system of claim 390, wherein the system is further configuredto determine at least the two properties of the specimen at more thanone position on the specimen, wherein the specimen comprises a wafer,and wherein the processor is configured to alter at least one parameterof one or more instruments coupled to a process tool in response to atleast one of the determined properties of the specimen at the more thanone position on the specimen to reduce within wafer variation of atleast one of the determined properties.
 462. The system of claim 390,wherein the processor is further coupled to a process tool.
 463. Thesystem of claim 390, wherein the processor is further coupled to aprocess tool, and wherein the processor is further configured to alter aparameter of one or more instruments coupled to the process tool inresponse to the determined first or second property using a feedbackcontrol technique during use.
 464. The system of claim 390, wherein theprocessor is further coupled to a process tool, and wherein theprocessor is further configured to alter a parameter of one or moreinstruments coupled to the process tool in response to the determinedfirst or second property using a feedforward control technique duringuse.
 465. The system of claim 390, wherein the processor is furthercoupled to a process tool, and wherein the processor is furtherconfigured to monitor a parameter of one or more instruments coupled tothe process tool during use.
 466. The system of claim 465, wherein theprocessor is further configured to determine a relationship between atleast one of the determined properties and at least one of the monitoredparameters during use.
 467. The system of claim 466, wherein theprocessor is further configured to alter the parameter of at least oneof the instruments in response to the relationship during use.
 468. Thesystem of claim 390, wherein the processor is further coupled to aplurality of measurement devices, and wherein each of the plurality ofmeasurement devices is coupled to at least one of a plurality of processtools.
 469. The system of claim 390, wherein the processor comprises alocal processor coupled to the measurement device and a remotecontroller computer coupled to the local processor, wherein the localprocessor is configured to at least partially process the one or moreoutput signals during use, and wherein the remote controller computer isconfigured to further process the at least partially processed one ormore output signals during use.
 470. The system of claim 469, whereinthe local processor is further configured to determine the firstproperty and the second property of the specimen during use.
 471. Thesystem of claim 469, wherein the remote controller computer is furtherconfigured to determine the first property and the second property ofthe specimen during use.
 472. A method for determining at least twoproperties of a specimen, comprising: disposing the specimen upon astage, wherein the stage is coupled to a measurement device, and whereinthe measurement device comprises an illumination system and a detectionsystem; directing energy toward a surface of the specimen using theillumination system; detecting energy propagating from the surface ofthe specimen using the detection system; generating one or more outputsignals in response to the detected energy; and processing the one ormore output signals to determine a first property and a second propertyof the specimen, wherein the first property comprises a presence ofdefects on the specimen, and wherein the second property comprises athin film characteristic of the specimen.
 473. The method of claim 472,further comprising laterally moving the stage during said directingenergy and said detecting energy.
 474. The method of claim 472, furthercomprising rotatably moving the stage during said directing energy andsaid detecting energy.
 475. The method of claim 472, further comprisinglaterally and rotatably moving the stage during said directing energyand said detecting energy.
 476. The method of claim 472, wherein theillumination system comprises a single energy source.
 477. The method ofclaim 472, wherein the illumination system comprises more than oneenergy source.
 478. The method of claim 472, wherein the detectionsystem comprises a single energy sensitive device.
 479. The method ofclaim 472, wherein the detection system comprises more than one energysensitive device.
 480. The method of claim 472, wherein the measurementdevice further comprises a non-imaging dark field device.
 481. Themethod of claim 472, wherein the measurement device further comprises anon-imaging bright field device.
 482. The method of claim 472, whereinthe measurement device further comprises a non-imaging dark field andbright field device.
 483. The method of claim 472, wherein themeasurement device further comprises a double dark field device. 484.The method of claim 472, wherein the measurement device furthercomprises a dark field imaging device.
 485. The method of claim 472,wherein the measurement device further comprises a bright field imagingdevice.
 486. The method of claim 472, wherein the measurement devicefurther comprises a dark field and bright field imaging device.
 487. Themethod of claim 472, wherein the measurement device further comprises ascatterometer.
 488. The method of claim 472, wherein the measurementdevice further comprises a spectroscopic scatterometer.
 489. The methodof claim 472, wherein the measurement device further comprises anellipsometer.
 490. The method of claim 472, wherein the measurementdevice further comprises a spectroscopic ellipsometer.
 491. The methodof claim 472, wherein the measurement device further comprises areflectometer.
 492. The method of claim 472, wherein the measurementdevice further comprises a spectroscopic reflectometer.
 493. The methodof claim 472, wherein the measurement device further comprises a dualbeam spectrophotometer.
 494. The method of claim 472, wherein themeasurement device further comprises a beam profile ellipsometer. 495.The method of claim 472, wherein the measurement device furthercomprises at least a first measurement device and a second measurementdevice, and wherein the first and second measurement devices areselected from the group consisting of a non-imaging dark field device, anon-imaging bright field device, a non-imaging dark field and brightfield device, a double dark field device, a dark field imaging device, abright field imaging device, a dark field and bright field imagingdevice, a scatterometer, a spectroscopic scatterometer, an ellipsometer,a spectroscopic ellipsometer, a reflectometer, spectroscopicreflectometer, a dual beam spectrophotometer, and a beam profileellipsometer.
 496. The method of claim 472, wherein the measurementdevice further comprises at least a first measurement device and asecond measurement device, and wherein optical elements of the firstmeasurement device comprise optical elements of the second measurementdevice.
 497. The method of claim 472, wherein the measurement devicecomprises non-optical components, and wherein detecting energy comprisesmeasuring a non-optical characteristic of the surface of the specimen.498. The method of claim 472, wherein the defects comprise micro defectsand macro defects.
 499. The method of claim 472, wherein the defectscomprise micro defects or macro defects.
 500. The method of claim 472,wherein the thin film characteristic comprises a thickness of a copperfilm, and wherein the defects comprise voids in the copper film. 501.The method of claim 472, wherein the defects comprise macro defects on aback side of the specimen, and wherein the macro defects comprise coppercontamination.
 502. The method of claim 472, further comprisingprocessing the one or more output signals to determine a third propertyof the specimen, wherein the third property is selected from the groupconsisting of a roughness of the specimen, a roughness of a layer on thespecimen, and a roughness of a feature of the specimen.
 503. The methodof claim 502, wherein the stage and the measurement device are coupledto a process tool selected from the group consisting of a lithographytool, an atomic layer deposition tool, a cleaning tool, and an etchtool.
 504. The method of claim 472, wherein processing the one or moreoutput signals to determine the first and second properties of thespecimen comprises substantially simultaneously determining the firstand second properties of the specimen.
 505. The method of claim 472,further comprising directing energy toward multiple locations on thesurface of the specimen substantially simultaneously and detectingenergy propagating from the multiple locations substantiallysimultaneously such that one or more of the at least two properties ofthe specimen can be determined at the multiple locations substantiallysimultaneously.
 506. The method of claim 472, wherein the stage and themeasurement device are coupled to a process tool.
 507. The method ofclaim 472, wherein the stage and the measurement device are coupled to aprocess tool, and wherein the stage and the measurement device arearranged laterally proximate to the process tool.
 508. The method ofclaim 472, wherein the stage and the measurement device are coupled to aprocess tool, and wherein the stage and the measurement device aredisposed within the process tool.
 509. The method of claim 472, whereinthe stage and the measurement device are coupled to a process tool, andwherein the process tool is selected from the group consisting of alithography tool, an etch tool, an ion implanter, a chemical-mechanicalpolishing tool, a deposition tool, a thermal tool, a cleaning tool, anda plating tool.
 510. The method of claim 472, wherein the stage and themeasurement device are coupled to a process tool, and wherein theprocess tool comprises a wafer handler, and wherein disposing thespecimen upon the stage comprises moving the specimen from the processtool to the stage using the wafer handler.
 511. The method of claim 472,wherein the stage and the measurement device are coupled to a processtool, the method further comprising moving the specimen to the processtool subsequent to said directing and said detecting using the stage.512. The method of claim 472, wherein the stage and the measurementdevice are coupled to a process tool, the method further comprisingdetermining at least the two properties of the specimen while thespecimen is waiting between process steps.
 513. The method of claim 472,wherein the stage and the measurement device are coupled to a processtool, wherein the process tool comprises a support device configured tosupport the specimen during a process step, and wherein an upper surfaceof the support device is substantially parallel to an upper surface ofthe stage.
 514. The method of claim 472, wherein the stage and themeasurement device are coupled to a process tool, wherein the processtool comprises a support device configured to support the specimenduring a process step, and wherein an upper surface of the stage isangled with respect to an upper surface of the support device.
 515. Themethod of claim 472, wherein the stage and the measurement device aredisposed within a measurement chamber, and wherein the measurementchamber is coupled to a process tool.
 516. The method of claim 472,wherein the stage and the measurement device are disposed within ameasurement chamber, and wherein the measurement chamber is disposedwithin a process tool.
 517. The method of claim 472, wherein the stageand the measurement device are disposed within a measurement chamber,and wherein the measurement chamber is arranged laterally proximate to aprocess chamber of a process tool.
 518. The method of claim 472, whereinthe stage and the measurement device are disposed within a measurementchamber, and wherein the measurement chamber is arranged verticallyproximate to a process chamber of a process tool.
 519. The method ofclaim 472, wherein disposing the specimen upon the stage comprisesdisposing the specimen upon a support device disposed within a processchamber of a process tool, and wherein the support device is configuredto support the specimen during a process step.
 520. The method of claim472, wherein disposing the specimen upon the stage comprises disposingthe specimen upon a support device disposed within a process chamber ofa process tool, and wherein the support device is configured to supportthe specimen during a process step, the method further comprisingperforming said directing and said detecting during the process step.521. The method of claim 520, further comprising obtaining a signaturecharacterizing the process step, wherein the signature comprises atleast one singularity representative of an end of the process step. 522.The method of claim 520, further comprising altering a parameter of oneor more instruments coupled to the process tool in response to at leastone of the determined properties using an in situ control technique.523. The method of claim 472, further comprising moving the specimenfrom a first process chamber to a second process chamber using thestage, wherein the first process chamber and the second process chamberare disposed within a process tool.
 524. The method of claim 472,further comprising moving the specimen from a first process chamber to asecond process chamber using the stage and performing said directing andsaid detecting during said moving the specimen from the first processchamber to the second process chamber.
 525. The method of claim 472,further comprising comparing at least one of the determined propertiesof the specimen and determined properties of a plurality of specimens.526. The method of claim 472, further comprising comparing at least oneof the determined properties of the specimen to a predetermined rangefor the property.
 527. The method of claim 526, further comprisinggenerating an output signal if at least one of the determined propertiesof the specimen is outside of the predetermined range for the property.528. The method of claim 472, further comprising altering a samplingfrequency of the measurement device in response to at least one of thedetermined properties of the specimen.
 529. The method of claim 472,further comprising altering a parameter of one or more instrumentscoupled to the measurement device in response to the determined first orsecond property using a feedback control technique.
 530. The method ofclaim 472, further comprising altering a parameter of one or moreinstruments coupled to the measurement device in response to thedetermined first or second property using a feedforward controltechnique.
 531. The method of claim 472, further comprising generating adatabase, wherein the database comprises the determined first and secondproperties of the specimen.
 532. The method of claim 472, furthercomprising calibrating the measurement device using the database. 533.The method of claim 472, further comprising monitoring output signalsgenerated by the measurement device using the database.
 534. The methodof claim 472, wherein the database further comprises first and secondproperties of a plurality of specimens.
 535. The method of claim 534,wherein the first and second properties of the plurality of specimensare generated using a plurality of measurement devices.
 536. The methodof claim 535, further comprising calibrating the plurality ofmeasurement devices using the database.
 537. The method of claim 535,further comprising monitoring output signals generated by the pluralityof measurement devices using the database.
 538. The method of claim 472,wherein a stand alone system is coupled to the measurement device, themethod further comprising calibrating the stand alone system with acalibration standard and calibrating the measurement device with thestand alone system.
 539. The method of claim 472, wherein a stand alonesystem is coupled to the measurement device and at least one additionalmeasurement device, the method further comprising calibrating the standalone system with a calibration standard and calibrating the measurementdevice an at least the one additional measurement device with the standalone system.
 540. The method of claim 472, further comprisingdetermining at least the two properties of the specimen at more than oneposition on the specimen, wherein the specimen comprises a wafer, themethod further comprising altering at least one parameter of one or moreinstruments coupled to a process tool in response to at least one of thedetermined properties of the specimen at the more than one position onthe specimen to reduce within wafer variation of at least one of thedetermined properties.
 541. The method of claim 472, further comprisingaltering a parameter of one or more instruments coupled to a processtool in response to at least one of the determined properties of thespecimen using a feedback control technique.
 542. The method of claim472, further comprising altering a parameter of one or more instrumentscoupled to a process tool in response to at least one of the determinedproperties of the specimen using a feedforward control technique. 543.The method of claim 472, further comprising monitoring a parameter ofone or more instruments coupled to a process tool.
 544. The method ofclaim 543, further comprising determining a relationship between atleast one of the determined properties and at least one of the monitoredparameters.
 545. The method of claim 544, further comprising altering aparameter of at least one of the instruments in response to therelationship.
 546. The method of claim 472, further comprising alteringa parameter of one or more instruments coupled to each of a plurality ofprocess tools in response to at least one of the determined propertiesof the specimen.
 547. The method of claim 472, wherein processing theone or more output signals comprises: at least partially processing theone or more output signals using a local processor, wherein the localprocessor is coupled to the measurement device; sending the partiallyprocessed one or more output signals from the local processor to aremote controller computer; and further processing the partiallyprocessed one or more output signals using the remote controllercomputer.
 548. The method of claim 547, wherein at least partiallyprocessing the one or more output signals comprises determining thefirst and second properties of the specimen.
 549. The method of claim547, wherein further processing the partially processed one or moreoutput signals comprises determining the first and second properties ofthe specimen.
 550. A computer-implemented method for controlling asystem configured to determine at least two properties of a specimenduring use, wherein the system comprises a measurement device,comprising: controlling the measurement device, wherein the measurementdevice comprises an illumination system and a detection system, andwherein the measurement device is coupled to a stage, comprising:controlling the illumination system to direct energy toward a surface ofthe specimen; controlling the detection system to detect energypropagating from the surface of the specimen; and generating one or moreoutput signals responsive to the detected energy; and processing the oneor more output signals to determine a first property and a secondproperty of the specimen, wherein the first property comprises apresence of defects on the specimen, and wherein the second propertycomprises a thin film characteristic of the specimen.
 551. The method ofclaim 550, further comprising controlling the stage, wherein the stageis configured to support the specimen.
 552. The method of claim 550,further comprising controlling the stage to laterally move the stageduring said directing energy and said detecting energy.
 553. The methodof claim 550, further comprising controlling the stage to rotatably movethe stage during said directing energy and said detecting energy. 554.The method of claim 550, further comprising controlling the stage tolaterally and rotatably move the stage during said directing energy andsaid detecting energy.
 555. The method of claim 550, wherein theillumination system comprises a single energy source.
 556. The method ofclaim 550, wherein the illumination system comprises more than oneenergy source.
 557. The method of claim 550, wherein the detectionsystem comprises a single energy sensitive device.
 558. The method ofclaim 550, wherein the detection system comprises more than one energysensitive devices.
 559. The method of claim 550, wherein the measurementdevice further comprises a non-imaging dark field device.
 560. Themethod of claim 550, wherein the measurement device further comprises anon-imaging bright field device.
 561. The method of claim 550, whereinthe measurement device further comprises a non-imaging dark field andbright field device.
 562. The method of claim 550, wherein themeasurement device further comprises a double dark field device. 563.The method of claim 550, wherein the measurement device furthercomprises a dark field imaging device.
 564. The method of claim 550,wherein the measurement device further comprises a bright field imagingdevice.
 565. The method of claim 550, wherein the measurement devicefurther comprises a dark field and bright field imaging device.
 566. Themethod of claim 550, wherein the measurement device further comprises ascatterometer.
 567. The method of claim 550, wherein the measurementdevice further comprises a spectroscopic scatterometer.
 568. The methodof claim 550, wherein the measurement device further comprises anellipsometer.
 569. The method of claim 550, wherein the measurementdevice further comprises a spectroscopic ellipsometer.
 570. The methodof claim 550, wherein the measurement device further comprises areflectometer.
 571. The method of claim 550, wherein the measurementdevice further comprises a spectroscopic reflectometer.
 572. The methodof claim 550, wherein the measurement device further comprises a dualbeam spectrophotometer.
 573. The method of claim 550, wherein themeasurement device further comprises a beam profile ellipsometer. 574.The method of claim 550, wherein the measurement device furthercomprises at least a first measurement device and a second measurementdevice, and wherein the first and second measurement devices areselected from the group consisting of a non-imaging dark field device, anon-imaging bright field device, a non-imaging dark field and brightfield device, a double dark field device, a dark field imaging device, abright field imaging device, a dark field and bright field imagingdevice, a scatterometer, a spectroscopic scatterometer, an ellipsometer,a spectroscopic ellipsometer, a reflectometer, a spectroscopicreflectometer, a dual beam spectrophotometer, and a beam profileellipsometer.
 575. The method of claim 550, wherein the measurementdevice further comprises at least a first measurement device and asecond measurement device, and wherein optical elements of the firstmeasurement device comprise optical elements of the second measurementdevice.
 576. The method of claim 550, wherein the measurement devicecomprises non-optical components, and wherein controlling the detectionsystem to detect energy comprises controlling the non-optical componentsto measure a non-optical characteristic of the surface of the specimen.577. The method of claim 550, wherein the defects comprise micro defectsand macro defects.
 578. The method of claim 550, wherein the defectscomprise micro defects or macro defects.
 579. The method of claim 550,wherein the thin film characteristic comprises a thickness of a copperfilm, and wherein the defects comprise voids in the copper film. 580.The method of claim 550, wherein the defects comprise macro defects on aback side of the specimen, and wherein the macro defects comprise coppercontamination.
 581. The method of claim 550, further comprisingprocessing the one or more output signals to determine a third propertyof the specimen, wherein the third property is selected from the groupconsisting of a roughness of the specimen, a roughness of a layer on thespecimen, and a roughness of a feature of the specimen.
 582. The methodof claim 581, wherein the stage and the measurement device are coupledto a process tool selected from the group consisting of a lithographytool, an atomic layer deposition tool, a cleaning tool, and an etchtool.
 583. The method of claim 550, wherein processing the one or moreoutput signals to determine the first and second properties of thespecimen comprises substantially simultaneously determining the firstand second properties of the specimen.
 584. The method of claim 550,further comprising controlling the illumination system to direct energytoward multiple locations on the surface of the specimen substantiallysimultaneously and controlling the detection system to detect energypropagating from the multiple locations substantially simultaneouslysuch that one or more of the at least two properties of the specimen canbe determined at the multiple locations substantially simultaneously.585. The method of claim 550, wherein the stage and the measurementdevice are coupled to a process tool.
 586. The method of claim 550,wherein the stage and the measurement device are coupled to a processtool, and wherein the stage and the measurement device are arrangedlaterally proximate to the process tool.
 587. The method of claim 550,wherein the stage and the measurement device are coupled to a processtool, and wherein the stage and the measurement device are disposedwithin the process tool.
 588. The method of claim 550, wherein the stageand the measurement device are coupled to a process tool, and whereinthe process tool is selected from the group consisting of a lithographytool, an etch tool, an ion implanter, a chemical-mechanical polishingtool, a deposition tool, a thermal tool, a cleaning tool, and a platingtool.
 589. The method of claim 550, wherein the stage and themeasurement device are coupled to a process tool, the method furthercomprising controlling a wafer handler to move the specimen from theprocess tool to the stage, and wherein the wafer handler is coupled tothe process tool.
 590. The method of claim 550, wherein the stage andthe measurement device are coupled to a process tool, the method furthercomprising controlling the stage to move the specimen from the system tothe process tool.
 591. The method of claim 550, wherein the stage andthe measurement device are coupled to a process tool, the method furthercomprising controlling a wafer handler to move the specimen from theprocess tool to the stage such that at least the two properties of thespecimen can be determined while the specimen is waiting between processsteps.
 592. The method of claim 550, wherein the stage and themeasurement device are coupled to a process tool, and wherein theprocess tool comprises a support device configured to support thespecimen during a process step, and wherein an upper surface of thesupport device is substantially parallel to an upper surface of thestage.
 593. The method of claim 550, wherein the stage and themeasurement device are coupled to a process tool, and wherein theprocess tool comprises a support device configured to support thespecimen during a process step, and wherein an upper surface of thestage is angled with respect to an upper surface of the support device.594. The method of claim 550, wherein the stage and the measurementdevice are disposed within a measurement chamber, and wherein themeasurement chamber is coupled to a process tool.
 595. The method ofclaim 550, wherein the stage and the measurement device are disposedwithin a measurement chamber, and wherein the measurement chamber isdisposed within a process tool.
 596. The method of claim 550, whereinthe stage and the measurement device are disposed within a measurementchamber, and wherein the measurement chamber is arranged laterallyproximate to a process chamber of a process tool.
 597. The method ofclaim 550, wherein the stage and the measurement device are disposedwithin a measurement chamber, and wherein the measurement chamber isarranged vertically proximate to a process chamber of a process tool.598. The method of claim 550, further comprising disposing the specimenupon a support device disposed within a process chamber of a processtool, wherein the support device is configured to support the specimenduring a process step.
 599. The method of claim 598, further comprisingcontrolling the illumination system and controlling the detection systemduring the process step.
 600. The method of claim 598, furthercomprising controlling the system to obtain a signature characterizingthe process step, wherein the signature comprises at least onesingularity representative of an end of the process step.
 601. Themethod of claim 598, further comprising controlling the system to altera parameter of one or more instruments coupled to the process tool inresponse to the determined properties using an in situ controltechnique.
 602. The method of claim 550, further comprising controllingthe stage to move the specimen from a first process chamber to a secondprocess chamber, wherein the first process chamber and the secondprocess chamber are disposed within a process tool.
 603. The method ofclaim 602, further comprising controlling the illumination system andcontrolling the detection system during said moving the specimen fromthe first process chamber to the second process chamber.
 604. The methodof claim 550, further comprising comparing at least one of thedetermined properties of the specimen and determined properties of aplurality of specimens.
 605. The method of claim 550, further comprisingcomparing at least one of the determined properties of the specimen to apredetermined range for the property.
 606. The method of claim 605,further comprising generating an output signal if at least one of thedetermined properties of the specimen is outside of the predeterminedrange for the property.
 607. The method of claim 550, further comprisingaltering a sampling frequency of the measurement device in response toat least one of the determined properties.
 608. The method of claim 550,further comprising altering a parameter of one or more instrumentscoupled to the measurement device in response to at least one of thedetermined properties using a feedback control technique.
 609. Themethod of claim 550, further comprising altering a parameter of one ormore instruments coupled to the measurement device in response to atleast one of the determined properties using a feedforward controltechnique.
 610. The method of claim 550, further comprising generating adatabase, wherein the database comprises the determined first and secondproperties of the specimen.
 611. The method of claim 610, furthercomprising calibrating the measurement device using the database. 612.The method of claim 610, further comprising monitoring output signals ofmeasurement device using the database.
 613. The method of claim 610,wherein the database further comprises first and second properties of aplurality of specimens.
 614. The method of claim 613, wherein the firstand second properties of the plurality of specimens are generated usinga plurality of measurement devices.
 615. The method of claim 613,further comprising calibrating the plurality of measurement devicesusing the database.
 616. The method of claim 613, further comprisingmonitoring output signals of the plurality of measurement devices usingthe database.
 617. The method of claim 550, wherein a stand alone systemis coupled to the system, the method further comprising controlling thestand alone system to calibrate the stand alone system with acalibration standard and further controlling the stand alone system tocalibrate the system.
 618. The method of claim 550, wherein a standalone system is coupled to the system and at least one additionalsystem, the method further comprising controlling the stand alone systemto calibrate the stand alone system with a calibration standard andfurther controlling the stand alone system to calibrate the system andat least the one additional system.
 619. The method of claim 550,wherein the system is further configured to determine at least the twoproperties of the specimen at more than one position on the specimen,and wherein the specimen comprises a wafer, the method furthercomprising altering at least one parameter of one or more instrumentscoupled to a process tool in response to at least one of the determinedproperties of the specimen at the more than one position on the specimento reduce within wafer variation of at least one of the determinedproperties.
 620. The method of claim 550, further comprising altering aparameter of one or more instruments coupled to a process tool inresponse to at least one of the determined properties of the specimenusing a feedback control technique.
 621. The method of claim 550,further comprising altering a parameter of one or more instrumentscoupled to a process tool in response to at least one of the determinedproperties of the specimen using a feedforward control technique. 622.The method of claim 550, further comprising monitoring a parameter ofone or more instruments coupled to a process tool.
 623. The method ofclaim 622, further comprising determining a relationship between atleast one of the determined properties and at least one of the monitoredparameters.
 624. The method of claim 623, further comprising altering aparameter of at least one of the instruments in response to therelationship.
 625. The method of claim 550, further comprising alteringa parameter of one or more instruments coupled to each of a plurality ofprocess tools in response to at least one of the determined propertiesof the specimen.
 626. The method of claim 550, wherein processing theone or more output signals comprises: at least partially processing theone or more output signals using a local processor, wherein the localprocessor is coupled to the measurement device; sending the partiallyprocessed one or more output signals from the local processor to aremote controller computer; and further processing the partiallyprocessed one or more output signals using the remote controllercomputer.
 627. The method of claim 626, wherein at least partiallyprocessing the one or more output signals comprises determining thefirst and second properties of the specimen.
 628. The method of claim626, wherein further processing the partially processed one or moreoutput signals comprises determining the first and second properties ofthe specimen.
 629. A semiconductor device fabricated by a method, themethod comprising: forming a portion of the semiconductor device upon aspecimen; disposing the specimen upon a stage, wherein the stage iscoupled to a measurement device, and wherein the measurement devicecomprises an illumination system and a detection system; directingenergy toward a surface of the specimen using the illumination system;detecting energy propagating from the surface of the specimen using thedetection system; generating one or more output signals in response tothe detected energy; and processing the one or more output signals todetermine a first property and a second property of the specimen,wherein the first property comprises a presence of defects on thespecimen, and wherein the second property comprises a thin filmcharacteristic of the specimen.
 630. The device of claim 629, whereinthe illumination system comprises a single energy source.
 631. Thedevice of claim 629, wherein the illumination system comprises more thanone energy source.
 632. The device of claim 629, wherein the detectionsystem comprises a single energy sensitive device.
 633. The device ofclaim 629, wherein the detection system comprises more than one energysensitive devices.
 634. The device of claim 629, wherein the measurementdevice further comprises a measurement device selected from the groupconsisting of a non-imaging dark field device, a non-imaging brightfield device, a non-imaging dark field and bright field device, a doubledark field device, a dark field imaging device, a bright field imagingdevice, a dark field and bright field imaging device, a scatterometer, aspectroscopic scatterometer, an ellipsometer, a spectroscopicellipsometer, a reflectometer, a spectroscopic reflectometer, a dualbeam spectrophotometer, and a beam profile ellipsometer.
 635. The deviceof claim 629, wherein the measurement device further comprises at leasta first measurement device and a second measurement device, and whereinthe first and second measurement devices are selected from the groupconsisting of a non-imaging dark field device, a non-imaging brightfield device, a non-imaging dark field and bright field device, a doubledark field device, a dark field imaging device, a bright field imagingdevice, a dark field and bright field imaging device, a scatterometer, aspectroscopic scatterometer, an ellipsometer, a spectroscopicellipsometer, a reflectometer, a spectroscopic reflectometer, a dualbeam spectrophotometer, and a beam profile ellipsometer.
 636. The deviceof claim 629, wherein the measurement device further comprises at leasta first measurement device and a second measurement device, and whereinoptical elements of the first measurement device comprise opticalelements of the second measurement device.
 637. The device of claim 629,wherein the measurement device comprises non-optical components, andwherein detecting energy comprises measuring a non-opticalcharacteristic of the surface of the specimen.
 638. The device of claim629, wherein the defects comprise micro defects and macro defects. 639.The device of claim 629, wherein the defects comprise micro defects ormacro defects.
 640. The device of claim 629, wherein the thin filmcharacteristic comprises a thickness of a copper film, and wherein thedefects comprise voids in the copper film.
 641. The device of claim 629,wherein the defects comprise macro defects on a back side of thespecimen, and wherein the macro defects comprise copper contamination.642. The device of claim 629, further comprising processing the one ormore output signals to determine a third property of the specimen,wherein the third property is selected from the group consisting of aroughness of the specimen, a roughness of a layer on the specimen, and aroughness of a feature of the specimen.
 643. The device of claim 642,wherein the stage and the measurement device are coupled to a processtool selected from the group consisting of a lithography tool, an atomiclayer deposition tool, a cleaning tool, and an etch tool.
 644. Thedevice of claim 629, wherein the stage and the measurement device arecoupled to a process tool.
 645. The device of claim 629, wherein thestage and the measurement device are coupled to a process tool, andwherein the process tool is selected from the group consisting of alithography tool, an etch tool, an ion implanter, a chemical-mechanicalpolishing tool, a deposition tool, a thermal tool, a cleaning tool, anda plating tool.
 646. A method for fabricating a semiconductor device,comprising: forming a portion of the semiconductor device upon aspecimen; disposing the specimen upon a stage, wherein the stage iscoupled to a measurement device, and wherein the measurement devicecomprises an illumination system and a detection system; directingenergy toward a surface of the specimen using the illumination system;detecting energy propagating from the surface of the specimen using thedetection system; generating one or more output signals responsive tothe detected energy; and processing the one or more output signals todetermine a first property and a second property of the specimen,wherein the first property comprises a presence of defects on thespecimen, and wherein the second property comprises a thin filmcharacteristic of the specimen.
 647. The method of claim 646, whereinthe illumination system comprises a single energy source.
 648. Themethod of claim 646, wherein the illumination system comprises more thanone energy source.
 649. The method of claim 646, wherein the detectionsystem comprises a single energy sensitive device.
 650. The method ofclaim 646, wherein the detection system comprises more than one energysensitive devices.
 651. The method of claim 646, wherein the measurementdevice further comprises a measurement device selected from the groupconsisting of a non-imaging dark field device, a non-imaging brightfield device, a non-imaging dark field and bright field device, a doubledark field device, a dark field imaging device, a bright field imagingdevice, a dark field and bright field imaging device, a scatterometer, aspectroscopic scatterometer, an ellipsometer, a spectroscopicellipsometer, a reflectometer, a spectroscopic reflectometer, a dualbeam spectrophotometer, and a beam profile ellipsometer.
 652. The methodof claim 646, wherein the measurement device further comprises at leasta first measurement device and a second measurement device, and whereinthe first and second measurement devices are selected from the groupconsisting of a non-imaging dark field device, a non-imaging brightfield device, a non-imaging dark field and bright field device, a doubledark field device, a dark field imaging device, a bright field imagingdevice, a dark field and bright field imaging device, a scatterometer, aspectroscopic scatterometer, an ellipsometer, a spectroscopicellipsometer, a reflectometer, a spectroscopic reflectometer, a dualbeam spectrophotometer, and a beam profile ellipsometer.
 653. The methodof claim 646, wherein the measurement device further comprises at leasta first measurement device and a second measurement device, and whereinoptical elements of the first measurement device comprise opticalelements of the second measurement device.
 654. The method of claim 646,wherein the measurement device comprises non-optical components, andwherein detecting energy comprises measuring a non-opticalcharacteristic of the surface of the specimen.
 655. The method of claim646, wherein the defects comprise micro defects and macro defects. 656.The method of claim 646, wherein the defects comprise micro defects ormacro defects.
 657. The method of claim 646, wherein the thin filmcharacteristic comprises a thickness of a copper film, and wherein thedefects comprise voids in the copper film.
 658. The method of claim 646,wherein the defects comprise macro defects on a back side of thespecimen, and wherein the macro defects comprise copper contamination.659. The method of claim 646, further comprising processing the one ormore output signals to determine a third property of the specimen,wherein the third property is selected from the group consisting of aroughness of the specimen, a roughness of a layer on the specimen, and aroughness of a feature of the specimen.
 660. The method of claim 659,wherein the stage and the measurement device are coupled to a processtool selected from the group consisting of a lithography tool, an atomiclayer deposition tool, a cleaning tool, and an etch tool.
 661. Themethod of claim 646, wherein the stage and the measurement device arecoupled to a process tool.
 662. The method of claim 646, wherein thestage and the measurement device are coupled to a process tool, andwherein the process tool comprises a lithography tool, an etch tool, anion implanter, a chemical-mechanical polishing tool, a deposition tool,a thermal tool, a cleaning tool, and a plating tool.
 663. A systemconfigured to determine at least two properties of a specimen duringuse, comprising: a stage configured to support the specimen during use;a measurement device coupled to the stage, comprising: an illuminationsystem configured to direct energy toward a surface of the specimenduring use; and a detection system coupled to the illumination systemand configured to detect energy propagating from the surface of thespecimen during use, wherein the measurement device is configured togenerate one or more output signals responsive to the detected energyduring use; a local processor coupled to the measurement device andconfigured to at least partially process the one or more output signalsduring use; and a remote controller computer coupled to the localprocessor, wherein the remote controller computer is configured toreceive the at least partially processed one or more output signals andto determine a first property and a second property of the specimen fromthe at least partially processed one or more output signals during use,wherein the first property comprises a presence of defects on thespecimen, and wherein the second property comprises a thin filmcharacteristic of the specimen.
 664. The system of claim 663, whereinthe measurement device further comprises a measurement device selectedfrom the group consisting of a non-imaging dark field device, anon-imaging bright field device, a non-imaging dark field and brightfield device, a double dark field device, a dark field imaging device, abright field imaging device, a dark field and bright field imagingdevice, a scatterometer, a spectroscopic scatterometer, an ellipsometer,a spectroscopic ellipsometer, a reflectometer, a spectroscopicreflectometer, a dual beam spectrophotometer, and a beam profileellipsometer.
 665. The system of claim 663, wherein the measurementdevice further comprises at least a first measurement device and asecond measurement device, and wherein the first and second measurementdevices are selected from the group consisting of a non-imaging darkfield device, a non-imaging bright field device, a non-imaging darkfield and bright field device, a double dark field device, a dark fieldimaging device, a bright field imaging device, a dark field and brightfield imaging device, a scatterometer, a spectroscopic scatterometer, anellipsometer, a spectroscopic ellipsometer, a reflectometer, aspectroscopic reflectometer, a dual beam spectrophotometer, and a beamprofile ellipsometer.
 666. The system of claim 663, wherein theillumination system and the detection system comprise non-opticalcomponents, and the detected energy is responsive to a nonopticalcharacteristic of the surface of the specimen.
 667. The system of claim663, wherein the defects comprise micro defects and macro defects. 668.The system of claim 663, wherein the defects comprise micro defects ormacro defects.
 669. The system of claim 663, wherein the thin filmcharacteristic comprises a thickness of a copper film, and wherein thedefects comprise voids in the copper film.
 670. The system of claim 663,wherein the defects comprise macro defects on a back side of thespecimen, and wherein the macro defects comprise copper contamination.671. The system of claim 663, wherein the remote controller computer isfurther configured to determine a third property of the specimen fromthe at least partially processed one or more output signals during use,and wherein the third property is selected from the group consisting ofa roughness of the specimen, a roughness of a layer on the specimen, anda roughness of a feature of the specimen.
 672. The system of claim 671,wherein the system is coupled to a process tool selected from the groupconsisting of a lithography tool, an atomic layer deposition tool, acleaning tool, and an etch tool.
 673. The system of claim 663, whereinthe illumination system is further configured to direct energy tomultiple locations on the surface of the specimen substantiallysimultaneously, and wherein the detection system is further configuredto detect energy propagating from the multiple locations on the surfaceof the specimen substantially simultaneously such that one or more ofthe at least two properties of the specimen can be determined at themultiple locations substantially simultaneously.
 674. The system ofclaim 663, wherein the stage and the measurement device are coupled to aprocess tool.
 675. The system of claim 663, wherein the stage and themeasurement device are coupled to a process tool, and wherein theprocess tool is selected from the group consisting of a lithographytool, an etch tool, an ion implanter, a chemical-mechanical polishingtool, a deposition tool, a thermal tool, a cleaning tool, and a platingtool.
 676. The system of claim 663, wherein the remote controllercomputer is coupled to a process tool, and wherein the remote controllercomputer is further configured to alter a parameter of one or moreinstruments coupled to the process tool in response to at least one ofthe determined properties using a feedback control technique during use.677. The system of claim 663, wherein the remote controller computer iscoupled to a process tool, and wherein the remote controller computer isfurther configured to alter a parameter of one or more instrumentscoupled to the process tool in response to at least one of thedetermined properties using a feedforward control technique during use.678. The system of claim 663, wherein the remote controller computer iscoupled to a process tool, and wherein the remote controller computer isfurther configured to monitor a parameter of one or more instrumentscoupled to the process tool during use.
 679. The system of claim 678,wherein the remote controller computer is further configured todetermine a relationship between at least one of the determinedproperties and at least one of the monitored parameters during use. 680.The system of claim 679, wherein the remote controller computer isfurther configured to alter a parameter of at least one of theinstruments in response to the relationship during use.
 681. The systemof claim 663, wherein the illumination system is further configured todirect energy toward the surface of the specimen during a process step,wherein the detection system is further configured to detect energypropagating from the surface of the specimen during the process step,and wherein the remote controller computer is further configured todetermine the first and second properties of the specimen during theprocess step.
 682. The system of claim 681, wherein the remotecontroller computer is further configured to obtain a signaturecharacterizing the process step during use, and wherein the signaturecomprises at least one singularity representative of an end of theprocess step.
 683. The system of claim 681, wherein the remotecontroller computer is further configured to alter a parameter of one ormore instruments coupled to the process tool in response to at least oneof the determined properties using an in situ control technique duringuse.
 684. The system of claim 663, wherein a process tool comprises afirst process chamber and a second process chamber, and wherein thestage is further configured to move the specimen from the first processchamber to the second process chamber during use.
 685. The system ofclaim 684, wherein the illumination system is further configured todirect energy toward the surface of the specimen during said moving,wherein the detection system is further configured to detect energypropagating from the surface of the specimen during said moving, andwherein the remote controller computer is further configured todetermine the first and second properties of the specimen during saidmoving.
 686. The system of claim 663, wherein the remote controllercomputer is further configured to compare at least one of the determinedproperties of the specimen and properties of a plurality of specimensduring use.
 687. The system of claim 663, wherein the remote controllercomputer is further configured to compare at least one of the determinedproperties of the specimen to a predetermined range for the propertyduring use.
 688. The system of claim 687, wherein the remote controllercomputer is further configured to generate an output signal if at leastone of the determined properties of the specimen is outside of thepredetermined range for the property during use.
 689. The system ofclaim 663, wherein the remote controller computer is further configuredto alter a sampling frequency of the measurement device in response toat least one of the determined properties of the specimen during use.690. The system of claim 663, wherein the remote controller computer isfurther configured to alter a parameter of one or more instrumentscoupled to the measurement device in response to at least one of thedetermined properties using a feedback control technique during use.691. The system of claim 663, wherein the remote controller computer isfurther configured to alter a parameter of one or more instrumentscoupled to the measurement device in response to at least one of thedetermined properties using a feedforward control technique during use.692. The system of claim 663, wherein the remote controller computer isfurther configured to generate a database during use, wherein thedatabase comprises the determined first and second properties of thespecimen.
 693. The system of claim 692, wherein the remote controllercomputer is further configured to calibrate the measurement device usingthe database during use.
 694. The system of claim 692, wherein theremote controller computer is further configured to monitor outputsignals generated by measurement device using the database during use.695. The system of claim 692, wherein the database further comprisesfirst and second properties of a plurality of specimens.
 696. The systemof claim 695, wherein the first and second properties of the pluralityof specimens are determined using a plurality of measurement devices.697. The system of claim 696, wherein the remote controller computer isfurther coupled to the plurality of measurement devices.
 698. The systemof claim 697, wherein the remote controller computer is furtherconfigured to calibrate the plurality of measurement devices using thedatabase during use.
 699. The system of claim 697, wherein the remotecontroller computer is further configured to monitor output signalsgenerated by the plurality of measurement devices using the databaseduring use.
 700. The system of claim 663, wherein the remote controllercomputer is further coupled to a plurality of measurement devices, andwherein each of the plurality of measurement devices is coupled to atleast one of a plurality of process tools.
 701. The system of claim 663,wherein the remote controller computer is further coupled to a pluralityof process tools, and wherein the remote controller computer is furtherconfigured to alter a parameter of one or more instruments coupled to atleast one of the plurality of process tools during use.
 702. A methodfor determining at least two properties of a specimen, comprising:disposing the specimen upon a stage, wherein the stage is coupled to ameasurement device, and wherein the measurement device comprises anillumination system and a detection system; directing energy toward asurface of the specimen using the illumination system; detecting energypropagating from the surface of the specimen using the detection system;generating one or more output signals responsive to the detected energy;and processing the one or more output signals to determine a firstproperty and a second property of the specimen, wherein the firstproperty comprises a presence of defects on the specimen, and whereinthe second property comprises a thin film characteristic of thespecimen, comprising: at least partially processing the one or moreoutput signals using a local processor, wherein the local processor iscoupled to the measurement device; sending the partially processed oneor more output signals from the local processor to a remote controllercomputer; and further processing the partially processed one or moreoutput signals using the remote controller computer.
 703. The method ofclaim 702, wherein the measurement device further comprises ameasurement device selected from the group consisting of a non-imagingdark field device, a non-imaging bright field device, a non-imaging darkfield and bright field device, a double dark field device, a dark fieldimaging device, a bright field imaging device, a dark field and brightfield imaging device, a scatterometer, a spectroscopic scatterometer, anellipsometer, a spectroscopic ellipsometer, a reflectometer, aspectroscopic reflectometer, a dual beam spectrophotometer, and a beamprofile ellipsometer.
 704. The method of claim 702, wherein themeasurement device further comprises at least a first measurement deviceand a second measurement device, and wherein the first and secondmeasurement devices are selected from the group consisting of anon-imaging dark field device, a non-imaging bright field device, anon-imaging dark field and bright field device, a double dark fielddevice, a dark field imaging device, a bright field imaging device, adark field and bright field imaging device, a scatterometer, aspectroscopic scatterometer, an ellipsometer, a spectroscopicellipsometer, a reflectometer, a spectroscopic reflectometer, a dualbeam spectrophotometer, and a beam profile ellipsometer.
 705. The methodof claim 702, wherein the measurement device comprises non-opticalcomponents, and wherein detecting energy comprises measuring anon-optical characteristic of the surface of the specimen.
 706. Themethod of claim 702, wherein the defects comprise micro defects andmacro defects.
 707. The method of claim 702, wherein the defectscomprise micro defects or macro defects.
 708. The method of claim 702,wherein the thin film characteristic comprises a thickness of a copperfilm, and wherein the defects comprise voids in the copper film. 709.The method of claim 702, wherein the defects comprise macro defects on aback side of the specimen, and wherein the macro defects comprise coppercontamination.
 710. The method of claim 702, further comprisingprocessing the one or more output signals to determine a third propertyof the specimen, wherein the third property is selected from the groupconsisting of a roughness of the specimen, a roughness of a layer on thespecimen, and a roughness of a feature of the specimen.
 711. The methodof claim 710, wherein the stage and the measurement device are coupledto a process tool selected from the group consisting of a lithographytool, an atomic layer deposition tool, a cleaning tool, and an etchtool.
 712. The method of claim 702, further comprising directing energytoward multiple locations on the surface of the specimen substantiallysimultaneously and detecting energy propagating from the multiplelocations substantially simultaneously such that one or more of the atleast two properties of the specimen can be determined at the multiplelocations substantially simultaneously.
 713. The method of claim 702,wherein the stage and the measurement device are coupled to a processtool.
 714. The method of claim 702, wherein the stage and themeasurement device are coupled to a process tool, and wherein theprocess tool is selected from the group consisting of a lithographytool, an etch tool, an ion implanter, a chemical-mechanical polishingtool, a deposition tool, a thermal tool, a cleaning tool, and a platingtool.
 715. The method of claim 702, wherein the stage and themeasurement device are coupled to a process tool, the method furthercomprising altering a parameter of one or more instruments coupled tothe process tool using the remote controller computer in response to atleast one of the determined properties of the specimen using a feedbackcontrol technique.
 716. The method of claim 702, wherein the stage andthe measurement device are coupled to a process tool, the method furthercomprising altering a parameter of one or more instruments coupled tothe process tool using the remote controller computer in response to atleast one of the determined properties of the specimen using afeedforward control technique.
 717. The method of claim 702, wherein thestage and the measurement device are coupled to a process tool, themethod further comprising monitoring a parameter of one or moreinstruments coupled to the process tool using the remote controllercomputer.
 718. The method of claim 717, further comprising determining arelationship between at least one of the determined properties and atleast one of the monitored parameters using the remote controllercomputer.
 719. The method of claim 718, further comprising altering aparameter of at least one of the instruments in response to therelationship using the remote controller computer.
 720. The method ofclaim 702, wherein the illumination system and the detection system arecoupled to a process chamber of the process tool, the method furthercomprising performing said directing and said detecting during a processstep.
 721. The method of claim 720, further comprising obtaining asignature characterizing the process step using the remote controllercomputer, wherein the signature comprises at least one singularityrepresentative of an end of the process step.
 722. The method of claim720, further comprising altering a parameter of one or more instrumentscoupled to the process tool using the remote controller computer inresponse to at least one of the determined properties using an in situcontrol technique.
 723. The method of claim 702, further comprising:moving the specimen from a first process chamber to a second processchamber using the stage; performing said directing and said detectingduring said moving the specimen.
 724. The method of claim 702, furthercomprising comparing at least one of the determined properties of thespecimen and determined properties of a plurality of specimens using theremote controller computer.
 725. The method of claim 702, furthercomprising comparing at least one of the determined properties of thespecimen to a predetermined range for the property using the remotecontroller computer.
 726. The method of claim 725, further comprisinggenerating an output signal using the remote controller computer if atleast one of the determined properties of the specimen is outside of thepredetermined range for the property.
 727. The method of claim 702,wherein the remote controller computer is coupled to the measurementdevice.
 728. The method of claim 727, further comprising altering asampling frequency of the measurement device using the remote controllercomputer in response to at least one of the determined properties of thespecimen.
 729. The method of claim 727, further comprising altering aparameter of one or more instruments coupled to the measurement deviceusing the remote controller computer in response to at least one of thedetermined properties using a feedback control technique.
 730. Themethod of claim 727, further comprising altering a parameter of one ormore instruments coupled to the measurement device using the remotecontroller computer in response to at least one of the determinedproperties using a feedforward control technique.
 731. The method ofclaim 702, further comprising generating a database using the remotecontroller computer, wherein the database comprises the determined firstand second properties of the specimen.
 732. The method of claim 731,further comprising calibrating the measurement device using the remotecontroller computer and the database.
 733. The method of claim 731,further comprising monitoring output signals from the measurement deviceusing the remote controller computer and the database.
 734. The methodof claim 731, wherein the database further comprises first and secondproperties of a plurality of specimens.
 735. The method of claim 734,wherein the first and second properties of the plurality of specimensare generated using a plurality of measurement devices.
 736. The methodof claim 735, further comprising calibrating the plurality ofmeasurement devices using the remote controller computer and thedatabase.
 737. The method of claim 735, further comprising monitoringthe plurality of measurement devices using the remote controllercomputer and the database.
 738. The method of claim 702, furthercomprising sending the at least partially processed one or more outputsignals from a plurality of local processors to the remote controllercomputer, wherein each of the plurality of local processors is coupledto one of a plurality of measurement devices.
 739. The method of claim738, further comprising altering a parameter of one or more instrumentscoupled to at least one of the plurality of measurement devices usingthe remote controller computer in response to at least one of thedetermined properties of the specimen.
 740. The method of claim 738,wherein each of the plurality of measurement devices is coupled to oneof a plurality of process tools.
 741. The method of claim 740, furthercomprising altering a parameter of one or more instruments coupled to atleast one of the plurality of process tools using the remote controllercomputer in response to at least one of the determined properties of thespecimen.
 742. A system configured to determine at least two propertiesof a specimen during use, comprising: a stage configured to support thespecimen during use; a measurement device coupled to the stage,comprising: an illumination system configured to direct energy toward asurface of the specimen during use; and a detection system coupled tothe illumination system and configured to detect energy propagating fromthe surface of the specimen during use, wherein the measurement deviceis configured to generate one or more output signals in response to thedetected energy during use; and a processor coupled to the measurementdevice and configured to determine a first property and a secondproperty of the specimen from the one or more output signals during use,wherein the first property comprises a critical dimension of thespecimen, and wherein the second property comprises a presence ofdefects on the specimen.
 743. The system of claim 742, wherein the stageis further configured to move laterally during use.
 744. The system ofclaim 742, wherein the stage is further configured to move rotatablyduring use.
 745. The system of claim 742, wherein the stage is furtherconfigured to move laterally and rotatably during use.
 746. The systemof claim 742, wherein the illumination system comprises a single energysource.
 747. The system of claim 742, wherein the illumination systemcomprises more than one energy source.
 748. The system of claim 742,wherein the detection system comprises a single energy sensitive device.749. The system of claim 742, wherein the detection system comprisesmore than one energy sensitive devices.
 750. The system of claim 742,wherein the measurement device further comprises a non-imagingscatterometer.
 751. The system of claim 742, wherein the measurementdevice further comprises a scatterometer.
 752. The system of claim 742,wherein the measurement device further comprises a spectroscopicscatterometer.
 753. The system of claim 742, wherein the measurementdevice further comprises a reflectometer.
 754. The system of claim 742,wherein the measurement device further comprises a spectroscopicreflectometer.
 755. The system of claim 742, wherein the measurementdevice further comprises a coherence probe microscope.
 756. The systemof claim 742, wherein the measurement device further comprises anellipsometer.
 757. The system of claim 742, wherein the measurementdevice further comprises a spectroscopic ellipsometer.
 758. The systemof claim 742, wherein the measurement device further comprises a brightfield imaging device.
 759. The system of claim 742, wherein themeasurement device further comprises a dark field imaging device. 760.The system of claim 742, wherein the measurement device furthercomprises a bright field and dark field imaging device.
 761. The systemof claim 742, wherein the measurement device further comprises anon-imaging bright field device.
 762. The system of claim 742, whereinthe measurement device further comprises a non-imaging dark fielddevice.
 763. The system of claim 742, wherein the measurement devicefurther comprises a non-imaging bright field and dark field device. 764.The system of claim 742, wherein the measurement device furthercomprises at least a first measurement device and a second measurementdevice, and wherein the first and second measurement devices areselected from the group consisting of a non-imaging scatterometer, ascatterometer, a spectroscopic scatterometer, a reflectometer, aspectroscopic reflectometer, a coherence probe microscope, anellipsometer, a spectroscopic ellipsometer, a bright field imagingdevice, a dark field imaging device, a bright field and dark fieldimaging device, a non-imaging bright field device, a non-imaging darkfield device, and a non-imaging bright field and dark field device. 765.The system of claim 742, wherein the measurement device furthercomprises at least a first measurement device and a second measurementdevice, and wherein optical elements of the first measurement devicecomprise optical elements of the second measurement device.
 766. Thesystem of claim 742, wherein the defects comprise micro defects andmacro defects.
 767. The system of claim 742, wherein the defectscomprises micro defects or macro defects.
 768. The system of claim 742,wherein the illumination system is further configured to direct energytoward a bottom surface of the specimen during use, wherein thedetection system is further configured to detect energy propagating fromthe bottom surface of the specimen during use, and wherein the secondproperty further comprises a presence of defects on the bottom surfaceof the specimen.
 769. The system of claim 768, wherein the defectscomprise macro defects.
 770. The system of claim 742, wherein theprocessor is further configured to determine a third property of thespecimen from the one or more output signals during use, and wherein thethird property is selected from the group consisting of a roughness ofthe specimen, a roughness of a layer on the specimen, and a roughness ofa feature of the specimen.
 771. The system of claim 770, wherein thesystem is coupled to a process tool selected from the group consistingof a lithography tool, an atomic layer deposition tool, a cleaning tool,and an etch tool.
 772. The system of claim 742, wherein the system isfurther configured to determine at least two properties of the specimensubstantially simultaneously during use.
 773. The system of claim 742,wherein the illumination system is further configured to direct energyto multiple locations on the surface of the specimen substantiallysimultaneously, and wherein the detection system is further configuredto detect energy propagating from the multiple locations on the surfaceof the specimen substantially simultaneously such that one or more ofthe at least two properties of the specimen can be determined at themultiple locations substantially simultaneously.
 774. The system ofclaim 742, wherein the system is coupled to a process tool.
 775. Thesystem of claim 742, wherein the system is coupled to a process tool,and wherein the system is disposed within the process tool.
 776. Thesystem of claim 742, wherein the system is coupled to a process tool,and wherein the system is arranged laterally proximate to the processtool.
 777. The system of claim 742, wherein the system is coupled to aprocess tool, and wherein the process tool comprises a wafer handlerconfigured to move the specimen to the stage during use.
 778. The systemof claim 742, wherein the system is coupled to a process tool, andwherein the stage is configured to move the specimen from the system tothe process tool during use.
 779. The system of claim 742, wherein thesystem is coupled to a process tool, and wherein the system is furtherconfigured to determine at least the two properties of the specimenwhile the specimen is waiting between process steps.
 780. The system ofclaim 742, wherein the system is coupled to a process tool, wherein theprocess tool comprises a support device configured to support thespecimen during a process step, and wherein an upper surface of thesupport device is substantially parallel to an upper surface of thestage.
 781. The system of claim 742, wherein the system is coupled to aprocess tool, wherein the process tool comprises a support deviceconfigured to support the specimen during a process step, and wherein anupper surface of the stage is angled with respect to an upper surface ofthe support device.
 782. The system of claim 742, wherein the system iscoupled to a process tool selected from the group consisting of alithography tool, an etch tool, and a deposition tool.
 783. The systemof claim 742, wherein the system comprises a measurement chamber,wherein the stage and the measurement device are disposed within themeasurement chamber, and wherein the measurement chamber is coupled to aprocess tool.
 784. The system of claim 742, wherein the system comprisesa measurement chamber, wherein the stage and the measurement device aredisposed within the measurement chamber, and wherein the measurementchamber is disposed within the process tool.
 785. The system of claim742, wherein the system comprises a measurement chamber, wherein thestage and the measurement device are disposed within the measurementchamber, and wherein the measurement chamber is arranged laterallyproximate to a process chamber of the process tool.
 786. The system ofclaim 742, wherein the system comprises a measurement chamber, whereinthe stage and the measurement device are disposed within the measurementchamber, and wherein the measurement chamber is arranged verticallyproximate to a process chamber of the process tool.
 787. The system ofclaim 742, wherein a process tool comprises a process chamber, whereinthe stage is disposed within the process chamber, and wherein the stageis further configured to support the specimen during a process step.788. The system of claim 787, wherein the processor is furtherconfigured to determine at least the two properties of the specimenduring the process step.
 789. The system of claim 788, wherein theprocessor is further configured to obtain a signature characterizing theprocess step during use, and wherein the signature comprises at leastone singularity representative of an end of the process step.
 790. Thesystem of claim 788, wherein the processor is coupled to the processtool and is further configured to alter a parameter of one or moreinstruments coupled to the process tool in response to the determinedproperties using an in situ control technique during use.
 791. Thesystem of claim 742, wherein a process tool comprises a first processchamber and a second process chamber, and wherein the stage is furtherconfigured to move the specimen from the first process chamber to thesecond process chamber during use.
 792. The system of claim 742, whereina process tool comprises a first process chamber and a second processchamber, and wherein the system is further configured to determine atleast the two properties of the specimen as the stage is moving thespecimen from the first process chamber to the second process chamber.793. The system of claim 742, wherein the processor is furtherconfigured to compare at least one of the determined properties of thespecimen and properties of a plurality of specimens during use.
 794. Thesystem of claim 742, wherein the processor is further configured tocompare at least one of the determined properties of the specimen to apredetermined range for the property during use.
 795. The system ofclaim 794, wherein the processor is further configured to generate anoutput signal if at least one of the determined properties of thespecimen is outside of the predetermined range for the property duringuse.
 796. The system of claim 742, wherein the processor is furtherconfigured to alter a sampling frequency of the measurement device inresponse to the determined first or second property of the specimenduring use.
 797. The system of claim 742, wherein the processor isfurther configured to alter a parameter of one or more instrumentscoupled to the measurement device in response to the determined first orsecond property using a feedback control technique during use.
 798. Thesystem of claim 742, wherein the processor is further configured toalter a parameter of one or more instruments coupled to the measurementdevice in response to the determined first or second property using afeedforward control technique during use.
 799. The system of claim 742,wherein the processor is further configured to generate a databaseduring use, wherein the database comprises the determined first andsecond properties of the specimen.
 800. The system of claim 799, whereinthe processor is further configured to calibrate the measurement deviceusing the database during use.
 801. The system of claim 799, wherein theprocessor is further configured to monitor output signals generated bymeasurement device using the database during use.
 802. The system ofclaim 799, wherein the database further comprises first and secondproperties of a plurality of specimens.
 803. The system of claim 802,wherein the first and second properties of the plurality of specimensare determined using a plurality of measurement devices.
 804. The systemof claim 803, wherein the processor is further coupled to the pluralityof measurement devices.
 805. The system of claim 804, wherein theprocessor is further configured to calibrate the plurality ofmeasurement devices using the database during use.
 806. The system ofclaim 804, wherein the processor is further configured to monitor outputsignals generated by the plurality of measurement devices using thedatabase during use.
 807. The system of claim 742, further comprising astand alone system coupled to the system, wherein the stand alone systemis configured to be calibrated with a calibration standard during use,and wherein the stand alone system is further configured to calibratethe system during use.
 808. The system of claim 742, further comprisinga stand alone system coupled the system and at least one additionalsystem, wherein the stand alone system is configured to be calibratedwith a calibration standard during use, and wherein the stand alonesystem is further configured to calibrate the system and at least theone additional system during use.
 809. The system of claim 742, whereinthe system is further configured to determine at least the twoproperties of the specimen at more than one position on the specimen,wherein the specimen comprises a wafer, and wherein the processor isconfigured to alter at least one parameter of one or more instrumentscoupled to a process tool in response to at least one of the determinedproperties of the specimen at the more than one position on the specimento reduce within wafer variation of at least one of the determinedproperties.
 810. The system of claim 742, wherein the processor isfurther coupled to a process tool.
 811. The system of claim 742, whereinthe processor is further coupled to a process tool, and wherein theprocessor is further configured to alter a parameter of one or moreinstruments coupled to the process tool in response to the determinedfirst or second property using a feedback control technique during use.812. The system of claim 742, wherein the processor is further coupledto a process tool, and wherein the processor is further configured toalter a parameter of one or more instruments coupled to the process toolin response to the determined first or second property using afeedforward control technique during use.
 813. The system of claim 742,wherein the processor is further coupled to a process tool, and whereinthe processor is further configured to monitor a parameter of one ormore instruments coupled to the process tool during use.
 814. The systemof claim 813, wherein the processor is further configured to determine arelationship between the determined properties and at least one of themonitored parameter during use.
 815. The system of claim 814, whereinthe processor is further configured to alter the parameter of at leastone of the instruments in response to the relationship during use. 816.The system of claim 742, wherein the processor is further coupled to aplurality of measurement devices, and wherein each of the plurality ofmeasurement devices is coupled to at least one of a plurality of processtools.
 817. The system of claim 742, wherein the processor comprises alocal processor coupled to the measurement device and a remotecontroller computer coupled to the local processor, wherein the localprocessor is configured to at least partially process the one or moreoutput signals during use, and wherein the remote controller computer isconfigured to further process the at least partially processed one ormore output signals during use.
 818. The system of claim 817, whereinthe local processor is further configured to determine the firstproperty and the second property of the specimen during use.
 819. Thesystem of claim 817, wherein the remote controller computer is furtherconfigured to determine the first property and the second property ofthe specimen during use.
 820. A method for determining at least twoproperties of a specimen, comprising: disposing the specimen upon astage, wherein the stage is coupled to a measurement device, and whereinthe measurement device comprises an illumination system and a detectionsystem; directing energy toward a surface of the specimen using theillumination system; detecting energy propagating from the surface ofthe specimen using the detection system; generating one or more outputsignals responsive to the detected energy; and processing the one ormore output signals to determine a first property and a second propertyof the specimen, wherein the first property comprises a criticaldimension of the specimen, and wherein the second property comprises apresence of defects on the specimen.
 821. The method of claim 820,further comprising laterally moving the stage during said directingenergy and said detecting energy.
 822. The method of claim 820, furthercomprising rotatably moving the stage during said directing energy andsaid detecting energy.
 823. The method of claim 820, further comprisinglaterally and rotatably moving the stage during said directing energyand said detecting energy.
 824. The method of claim 820, wherein theillumination system comprises a single energy source.
 825. The method ofclaim 820, wherein the illumination system comprises more than oneenergy source.
 826. The method of claim 820, wherein the detectionsystem comprises a single energy sensitive device.
 827. The method ofclaim 820, wherein the detection system comprises more than one energysensitive devices.
 828. The method of claim 820, wherein the measurementdevice further comprises a non-imaging scatterometer.
 829. The method ofclaim 820, wherein the measurement device further comprises ascatterometer.
 830. The method of claim 820, wherein the measurementdevice further comprises a spectroscopic scatterometer.
 831. The methodof claim 820, wherein the measurement device further comprises areflectometer.
 832. The method of claim 820, wherein the measurementdevice further comprises a spectroscopic reflectometer.
 833. The methodof claim 820, wherein the measurement device further comprises acoherence probe microscope.
 834. The method of claim 820, wherein themeasurement device further comprises an ellipsometer.
 835. The method ofclaim 820, wherein the measurement device further comprises aspectroscopic ellipsometer.
 836. The method of claim 820, wherein themeasurement device further comprises a bright field imaging device. 837.The method of claim 820, wherein the measurement device furthercomprises a dark field imaging device.
 838. The method of claim 820,wherein the measurement device further comprises a bright field and darkfield imaging device.
 839. The method of claim 820, wherein themeasurement device further comprises a non-imaging bright field device.840. The method of claim 820, wherein the measurement device furthercomprises a non-imaging dark field device.
 841. The method of claim 820,wherein the measurement device further comprises and a non-imagingbright field and dark field device.
 842. The method of claim 820,wherein the measurement device further comprises at least a firstmeasurement device and a second measurement device, and wherein thefirst and second measurement devices are selected from the groupconsisting of a non-imaging scatterometer, a scatterometer, aspectroscopic scatterometer, a reflectometer, a spectroscopicreflectometer, a coherence probe microscope, an ellipsometer, aspectroscopic ellipsometer, a bright field imaging device, a dark fieldimaging device, a bright field and dark field imaging device, anon-imaging bright field device, a non-imaging dark field device, and anon-imaging bright field and dark field device.
 843. The method of claim820, wherein the measurement device further comprises at least a firstmeasurement device and a second measurement device, and wherein opticalelements of the first measurement device comprise optical elements ofthe second measurement device.
 844. The method of claim 820, wherein thedefects comprise micro defects and macro defects.
 845. The method ofclaim 820, wherein the defects comprises micro defects or macro defects.846. The method of claim 820, further comprising: directing energytoward a bottom surface of the specimen; and detecting energypropagating from the bottom surface of the specimen, wherein the secondproperty comprises a presence of defects on the bottom surface of thespecimen.
 847. The method of claim 846, wherein the defects comprisemacro defects.
 848. The method of claim 820, further comprisingprocessing the one or more output signals to determine a third propertyof the specimen, wherein the third property is selected from the groupconsisting of a roughness of the specimen, a roughness of a layer on thespecimen, and a roughness of a feature of the specimen.
 849. The methodof claim 848, wherein the stage and the measurement device are coupledto a process tool selected from the group consisting of a lithographytool, an atomic layer deposition tool, a cleaning tool, and an etchtool.
 850. The method of claim 820, wherein processing the one or moreoutput signals to determine the first and second properties of thespecimen comprises substantially simultaneously determining the firstand second properties of the specimen.
 851. The method of claim 820,further comprising directing energy toward multiple locations on thesurface of the specimen substantially simultaneously and detectingenergy propagating from the multiple locations substantiallysimultaneously such that one or more of the at least two properties ofthe specimen can be determined at the multiple locations substantiallysimultaneously.
 852. The method of claim 820, wherein the stage and themeasurement device are coupled to a process tool.
 853. The method ofclaim 820, wherein the stage and the measurement device are coupled to aprocess tool, and wherein the stage and the measurement device arearranged laterally proximate to the process tool.
 854. The method ofclaim 820, wherein the stage and the measurement device are coupled to aprocess tool, and wherein the stage and the measurement device aredisposed within the process tool.
 855. The method of claim 820, whereinthe stage and the measurement device are coupled to a process toolselected from the group consisting of a lithography tool, an etch tool,and a deposition tool.
 856. The method of claim 820, wherein the stageand the measurement device are coupled to a process tool, wherein theprocess tool comprises a wafer handler, and wherein disposing thespecimen upon the stage comprises moving the specimen from the processtool to the stage using the wafer handler.
 857. The method of claim 820,wherein the stage and the measurement device are coupled to a processtool, the method further comprising moving the specimen to the processtool subsequent to said directing and said detecting using the stage.858. The method of claim 820, wherein the stage and the measurementdevice are coupled to a process tool, the method further comprisingdetermining at least the two properties of the specimen while thespecimen is waiting between process steps.
 859. The method of claim 820,wherein the stage and the measurement device are coupled to a processtool, wherein the process tool comprises a support device configured tosupport the specimen during a process step, and wherein an upper surfaceof the support device is substantially parallel to an upper surface ofthe stage.
 860. The method of claim 820, wherein the stage and themeasurement device are coupled to a process tool, wherein the processtool comprises a support device configured to support the specimenduring a process step, and wherein an upper surface of the stage isangled with respect to an upper surface of the support device.
 861. Themethod of claim 820, wherein the stage and the measurement device aredisposed within a measurement chamber, and wherein the measurementchamber is coupled to a process tool.
 862. The method of claim 820,wherein the stage and the measurement device are disposed within ameasurement chamber, and wherein the measurement chamber is disposedwithin the process tool.
 863. The method of claim 820, wherein the stageand the measurement device are disposed within a measurement chamber,and wherein the measurement chamber is arranged laterally proximate to aprocess chamber of the process tool.
 864. The method of claim 820,wherein the stage and the measurement device are disposed within ameasurement chamber, and wherein the measurement chamber is arrangedvertically proximate to a process chamber of the process tool.
 865. Themethod of claim 820, wherein disposing the specimen upon the stagecomprises disposing the specimen upon a support device disposed within aprocess chamber of a process tool, and wherein the support device isconfigured to support the specimen during a process step.
 866. Themethod of claim 865, further comprising performing said directing andsaid detecting during the process step.
 867. The method of claim 866,further comprising obtaining a signature characterizing the processstep, wherein the signature comprises at least one singularityrepresentative of an end of the process step.
 868. The method of claim866, further comprising altering a parameter of one or more instrumentscoupled to the process tool in response to the determined propertiesusing an in situ control technique.
 869. The method of claim 820,further comprising moving the specimen from a first process chamber to asecond process chamber using the stage, wherein the first processchamber and the second process chamber are disposed within a processtool.
 870. The method of claim 869, further comprising performing saiddirecting and said detecting during said moving the specimen from thefirst process chamber to the second process chamber.
 871. The method ofclaim 820, further comprising comparing at least one of the determinedproperties of the specimen and determined properties of a plurality ofspecimens.
 872. The method of claim 820, further comprising comparing atleast one of the determined properties of the specimen to apredetermined range for the property.
 873. The method of claim 872,further comprising generating an output signal if at least one of thedetermined properties of the specimen is outside of the predeterminedrange for the property.
 874. The method of claim 820, further comprisingaltering a sampling frequency of the measurement device in response tothe determined first or second property of the specimen.
 875. The methodof claim 820, further comprising altering a parameter of one or moreinstruments coupled to the measurement device in response to thedetermined first or second property using a feedback control technique.876. The method of claim 820, further comprising altering a parameter ofone or more instruments coupled to the measurement device in response tothe determined first or second property using a feedforward controltechnique.
 877. The method of claim 820, further comprising generating adatabase, wherein the database comprises the determined first and secondproperties of the specimen.
 878. The method of claim 877, furthercomprising calibrating the measurement device using the database. 879.The method of claim 877, further comprising monitoring output signals ofthe measurement device using the database.
 880. The method of claim 877,wherein the database further comprises first and second properties of aplurality of specimens.
 881. The method of claim 880, wherein the firstand second properties of the plurality of specimens are generated usinga plurality of measurement devices.
 882. The method of claim 881,further comprising calibrating the plurality of measurement devicesusing the database.
 883. The method of claim 881, further comprisingmonitoring output signals of the plurality of measurement devices usingthe database.
 884. The method of claim 820, wherein a stand alone systemis coupled to the measurement device, the method further comprisingcalibrating the stand alone system with a calibration standard andcalibrating the measurement device with the stand alone system.
 885. Themethod of claim 820, wherein a stand alone system is coupled to themeasurement device and at least one additional measurement device, themethod further comprising calibrating the stand alone system with acalibration standard and calibrating the measurement device an at leastthe one additional measurement device with the stand alone system. 886.The method of claim 820, further comprising determining at least the twoproperties of the specimen at more than one position on the specimen,wherein the specimen comprises a wafer, the method further comprisingaltering at least one parameter of one or more instruments coupled to aprocess tool in response to at least one of the determined properties ofthe specimen at the more than one position on the specimen to reducewithin wafer variation of at least one of the determined properties.887. The method of claim 820, further comprising altering a parameter ofone or more instrument coupled to a process tool in response to thedetermined first or second property of the specimen using a feedbackcontrol technique.
 888. The method of claim 820, further comprisingaltering a parameter of one or more instrument coupled to a process toolin response to the determined first or second property of the specimenusing a feedforward control technique.
 889. The method of claim 820,further comprising monitoring a parameter of one or more instrumentscoupled to a process tool.
 890. The method of claim 889, furthercomprising determining a relationship between the determined propertiesand at least one of the monitored parameters.
 891. The method of claim890, further comprising altering the parameter of at least one of theinstruments in response to the relationship.
 892. The method of claim820, further comprising altering a parameter of one or more instrumentscoupled to each of a plurality of process tools in response to thedetermined first or second property of the specimen.
 893. The method ofclaim 820, wherein processing the one or more output signals comprises:at least partially processing the one or more output signals using alocal processor, wherein the local processor is coupled to themeasurement device; sending the partially processed one or more outputsignals from the local processor to a remote controller computer; andfurther processing the partially processed one or more output signalsusing the remote controller computer.
 894. The method of claim 893,wherein at least partially processing the one or more output signalscomprises determining the first and second properties of the specimen.895. The method of claim 893, wherein further processing the partiallyprocessed one or more output signals comprises determining the first andsecond properties of the specimen.
 896. A computer-implemented methodfor controlling a system configured to determine at least two propertiesof a specimen during use, wherein the system comprises a measurementdevice, comprising: controlling the measurement device, wherein themeasurement device comprises an illumination system and a detectionsystem, and wherein the measurement device is coupled to a stage,comprising: controlling the illumination system to direct energy towarda surface of the specimen; controlling the detection system to detectenergy propagating from the surface of the specimen; and generating oneor more output signals responsive to the detected energy; and processingthe one or more output signals to determine a first property and asecond property of the specimen, wherein the first property comprises acritical dimension of the specimen, and wherein the second propertycomprises a presence of defects on the specimen.
 897. The method ofclaim 896, further comprising controlling the stage, wherein the stageis configured to support the specimen.
 898. The method of claim 896,further comprising controlling the stage to move laterally during saiddirecting energy and said detecting energy.
 899. The method of claim896, further comprising controlling the stage to move rotatably duringsaid directing energy and said detecting energy.
 900. The method ofclaim 896, further comprising controlling the stage to move laterallyand rotatably during said directing energy and said detecting energy.901. The method of claim 896, wherein the illumination system comprisesa single energy source.
 902. The method of claim 896, wherein theillumination system comprises more than one energy source.
 903. Themethod of claim 896, wherein the detection system comprises a singleenergy sensitive device.
 904. The method of claim 896, wherein thedetection system comprises more than one energy sensitive devices. 905.The method of claim 896, wherein the measurement device furthercomprises a non-imaging scatterometer.
 906. The method of claim 896,wherein the measurement device further comprises a scatterometer. 907.The method of claim 896, wherein the measurement device furthercomprises a spectroscopic scatterometer.
 908. The method of claim 896,wherein the measurement device further comprises a reflectometer. 909.The method of claim 896, wherein the measurement device furthercomprises a spectroscopic reflectometer.
 910. The method of claim 896,wherein the measurement device further comprises a coherence probemicroscope.
 911. The method of claim 896, wherein the measurement devicefurther comprises an ellipsometer.
 912. The method of claim 896, whereinthe measurement device further comprises a spectroscopic ellipsometer.913. The method of claim 896, wherein the measurement device furthercomprises a bright field imaging device.
 914. The method of claim 896,wherein the measurement device further comprises a dark field imagingdevice.
 915. The method of claim 896, wherein the measurement devicefurther comprises a bright field and dark field imaging device.
 916. Themethod of claim 896, wherein the measurement device further comprises anon-imaging bright field device.
 917. The method of claim 896, whereinthe measurement device further comprises a non-imaging dark fielddevice.
 918. The method of claim 896, wherein the measurement devicefurther comprises and a non-imaging bright field and dark field device.919. The method of claim 896, wherein the measurement device furthercomprises at least a first measurement device and a second measurementdevice, and wherein the first and second measurement devices areselected from the group consisting of a non-imaging scatterometer, ascatterometer, a spectroscopic scatterometer, a reflectometer, aspectroscopic reflectometer, a coherence probe microscope, anellipsometer, a spectroscopic ellipsometer, a bright field imagingdevice, a dark field imaging device, a bright field and dark fieldimaging device, a non-imaging bright field device, a non-imaging darkfield device, and a non-imaging bright field and dark field device. 920.The method of claim 896, wherein the measurement device furthercomprises at least a first measurement device and a second measurementdevice, and wherein optical elements of the first measurement devicecomprise optical elements of the second measurement device.
 921. Themethod of claim 896, wherein the defects comprise micro defects andmacro defects.
 922. The method of claim 896, wherein the defectscomprises micro defects or macro defects.
 923. The method of claim 896,further comprising: controlling the illumination system to direct energytoward a bottom surface of the specimen; and controlling the detectionsystem to detect energy propagating from the bottom surface of thespecimen, wherein the second property comprises a presence of defects onthe bottom surface of the specimen.
 924. The method of claim 923,wherein the defects comprise macro defects.
 925. The method of claim896, further comprising processing the one or more output signals todetermine a third property of the specimen, wherein the third propertyis selected from the group consisting of a roughness of the specimen, aroughness of a layer on the specimen, and a roughness of a feature ofthe specimen.
 926. The method of claim 925, wherein the stage and themeasurement device are coupled to a process tool selected from the groupconsisting of a lithography tool, an atomic layer deposition tool, acleaning tool, and an etch tool.
 927. The method of claim 896, whereinprocessing the one or more output signals to determine the first andsecond properties of the specimen comprises substantially simultaneouslydetermining the first and second properties of the specimen.
 928. Themethod of claim 896, further comprising controlling the illuminationsystem to direct energy toward multiple locations on the surface of thespecimen substantially simultaneously and controlling the detectionsystem to detect energy propagating from the multiple locationssubstantially simultaneously such that one or more of the at least twoproperties of the specimen can be determined at the multiple locationssubstantially simultaneously.
 929. The method of claim 896, wherein thestage and the measurement device are coupled to a process tool.
 930. Themethod of claim 896, wherein the stage and the measurement device arecoupled to a process tool, and wherein the stage and the measurementdevice are arranged laterally proximate to the process tool.
 931. Themethod of claim 896, wherein the stage and the measurement device arecoupled to a process tool, and wherein the stage and the measurementdevice are disposed within the process tool.
 932. The method of claim896, wherein the stage and the measurement device are coupled to aprocess tool, and wherein the process tool is selected from the groupconsisting of a lithography tool, an etch tool, and a deposition tool.933. The method of claim 896, wherein the stage and the measurementdevice are coupled to a process tool, the method further comprisingcontrolling a wafer handler to move the specimen from the process toolto the stage, and wherein the wafer handler is coupled to the processtool.
 934. The method of claim 896, wherein the stage and themeasurement device are coupled to a process tool, the method furthercomprising controlling the stage to move the specimen from the system tothe process tool.
 935. The method of claim 896, wherein the stage andthe measurement device are coupled to a process tool, the method furthercomprising controlling a wafer handler to move the specimen from theprocess tool to the stage such that at least the two properties of thespecimen can be determined while the specimen is waiting between processsteps.
 936. The method of claim 896, wherein the stage and themeasurement device are coupled to a process tool, wherein the processtool comprises a support device configured to support the specimenduring a process step, and wherein an upper surface of the supportdevice is substantially parallel to an upper surface of the stage. 937.The method of claim 896, wherein the stage and the measurement deviceare coupled to a process tool, wherein the process tool comprises asupport device configured to support the specimen during a process step,and wherein an upper surface of the stage is angled with respect to anupper surface of the support device.
 938. The method of claim 896,wherein the stage and the measurement device are disposed within ameasurement chamber, and wherein the measurement chamber is coupled to aprocess tool.
 939. The method of claim 896, wherein the stage and themeasurement device are disposed within a measurement chamber, andwherein the measurement chamber is disposed within a process tool. 940.The method of claim 896, wherein the stage and the measurement deviceare disposed within a measurement chamber, and wherein the measurementchamber is arranged laterally proximate to a process chamber of aprocess tool.
 941. The method of claim 896, wherein the stage and themeasurement device are disposed within a measurement chamber, andwherein the measurement chamber is arranged vertically proximate to aprocess chamber of a process tool.
 942. The method of claim 896, furthercomprising disposing the specimen upon a support device disposed withina process chamber of a process tool, and wherein the support device isconfigured to support the specimen during a process step.
 943. Themethod of claim 942, further comprising controlling the illuminationsystem and controlling the detection system during the process step.944. The method of claim 943, further comprising controlling the systemto obtain a signature characterizing the process step, wherein thesignature comprises at least one singularity representative of an end ofthe process step.
 945. The method of claim 943, further comprisingcontrolling the system to alter a parameter of one or more instrumentscoupled to the process tool in response to the determined propertiesusing an in situ control technique.
 946. The method of claim 896,further comprising controlling the stage to move the specimen from afirst process chamber to a second process chamber, wherein the firstprocess chamber and the second process chamber are disposed within aprocess tool.
 947. The method of claim 946, further comprisingcontrolling the illumination system and controlling the detection systemduring said moving the specimen from the first process chamber to thesecond process chamber.
 948. The method of claim 896, further comprisingcomparing at least one of the determined properties of the specimen anddetermined properties of a plurality of specimens.
 949. The method ofclaim 896, further comprising comparing at least one of the determinedproperties of the specimen to a predetermined range for the property.950. The method of claim 949, further comprising generating an outputsignal if at least one of the determined properties of the specimen isoutside of the predetermined range for the property.
 951. The method ofclaim 896, further comprising altering a sampling frequency of themeasurement device in response to the determined first or secondproperty of the specimen.
 952. The method of claim 896, furthercomprising altering a parameter of one or more instruments coupled tothe measurement device in response to the determined first or secondproperty using a feedback control technique.
 953. The method of claim896, further comprising altering a parameter of one or more instrumentscoupled to the measurement device in response to the determined first orsecond property using a feedforward control technique.
 954. The methodof claim 896, further comprising generating a database, wherein thedatabase comprises the determined first and second properties of thespecimen.
 955. The method of claim 954, further comprising calibratingthe measurement device using the database.
 956. The method of claim 954,further comprising monitoring output signals of the measurement deviceusing the database.
 957. The method of claim 954, wherein the databasefurther comprises first and second properties of a plurality ofspecimens.
 958. The method of claim 957, wherein the first and secondproperties of the plurality of specimens are generated using a pluralityof measurement devices.
 959. The method of claim 958, further comprisingcalibrating the plurality of measurement devices using the database.960. The method of claim 958, further comprising monitoring outputsignals of the plurality of measurement devices using the database. 961.The method of claim 896, wherein a stand alone system is coupled to thesystem, the method further comprising controlling the stand alone systemto calibrate the stand alone system with a calibration standard andfurther controlling the stand alone system to calibrate the system. 962.The method of claim 896, wherein a stand alone system is coupled to thesystem and at least one additional system, the method further comprisingcontrolling the stand alone system to calibrate the stand alone systemwith a calibration standard and further controlling the stand alonesystem to calibrate the system and at least the one additional system.963. The method of claim 896, wherein the system is further configuredto determine at least the two properties of the specimen at more thanone position on the specimen, and wherein the specimen comprises awafer, the method further comprising altering at least one parameter ofone or more instruments coupled to a process tool in response to atleast one of the determined properties of the specimen at the more thanone position on the specimen to reduce within wafer variation of atleast one of the determined properties.
 964. The method of claim 896,further comprising altering a parameter of one or more instrumentscoupled to a process tool in response to the determined first or secondproperty of the specimen using a feedback control technique.
 965. Themethod of claim 896, further comprising altering a parameter of one ormore instruments coupled to a process tool in response to the determinedfirst or second property of the specimen using a feedforward controltechnique.
 966. The method of claim 896, further comprising monitoring aparameter of one or more instruments coupled to a process tool.
 967. Themethod of claim 966, further comprising determining a relationshipbetween the determined properties and at least one of the monitoredparameters.
 968. The method of claim 967, further comprising altering aparameter of one or more of the instruments in response to therelationship.
 969. The method of claim 896, further comprising alteringa parameter of one or more instruments coupled to each of a plurality ofprocess tools in response to the determined first or second property ofthe specimen.
 970. The method of claim 896, wherein processing the oneor more output signals comprises: at least partially processing the oneor more output signals using a local processor, wherein the localprocessor is coupled to the measurement device; sending the partiallyprocessed one or more output signals from the local processor to aremote controller computer; and further processing the partiallyprocessed one or more output signals using the remote controllercomputer.
 971. The method of claim 970, wherein at least partiallyprocessing the one or more output signals comprises determining thefirst and second properties of the specimen.
 972. The method of claim970, wherein further processing the partially processed one or moreoutput signals comprises determining the first and second properties ofthe specimen.
 973. A semiconductor device fabricated by a method, themethod comprising: forming a portion of the semiconductor device upon aspecimen; disposing the specimen upon a stage, wherein the stage iscoupled to a measurement device, and wherein the measurement devicecomprises an illumination system and a detection system; directingenergy toward a surface of the specimen using the illumination system;detecting energy propagating from the surface of the specimen using thedetection system; generating one or more output signals responsive tothe detected energy; and processing the one or more output signals todetermine a first property and a second property of the specimen,wherein the first property comprises a critical dimension of the portionof the specimen, and wherein the second property comprises a presence ofdefects on the portion of the specimen.
 974. The device of claim 973,wherein the illumination system comprises a single energy source. 975.The device of claim 973, wherein the illumination system comprises morethan one energy source.
 976. The device of claim 973, wherein thedetection system comprises a single energy sensitive device.
 977. Thedevice of claim 973, wherein the detection system comprises more thanone energy sensitive devices.
 978. The device of claim 973, wherein themeasurement device is selected from the group consisting of anon-imaging scatterometer, a scatterometer, a spectroscopicscatterometer, a reflectometer, a spectroscopic reflectometer, acoherence probe microscope, an ellipsometer, a spectroscopicellipsometer, a bright field imaging device, a dark field imagingdevice, a bright field and dark field imaging device, a non-imagingbright field device, a non-imaging dark field device, and a non-imagingbright field and dark field device.
 979. The device of claim 973,wherein the measurement device further comprises at least a firstmeasurement device and a second measurement device, and wherein thefirst and second measurement devices are selected from the groupconsisting of a non-imaging scatterometer, a scatterometer, aspectroscopic scatterometer, a reflectometer, a spectroscopicreflectometer, a coherence probe microscope, an ellipsometer, aspectroscopic ellipsometer, a bright field imaging device, a dark fieldimaging device, a bright field and dark field imaging device, anon-imaging bright field device, a non-imaging dark field device, and anon-imaging bright field and dark field device.
 980. The device of claim973, wherein the measurement device further comprises at least a firstmeasurement device and a second measurement device, and wherein opticalelements of the first measurement device comprise optical elements ofthe second measurement device.
 981. The device of claim 973, wherein thedefects comprise micro defects and macro defects.
 982. The device ofclaim 973, wherein the defects comprises micro defects or macro defects.983. The device of claim 973, further comprising: directing energytoward a bottom surface of the specimen; and detecting energypropagating from the bottom surface of the specimen, wherein the secondproperty comprises a presence of defects on the bottom surface of thespecimen.
 984. The device of claim 983, wherein the defects comprisemacro defects.
 985. The device of claim 973, further comprisingprocessing the one or more output signals to determine a third propertyof the specimen, wherein the third property is selected from the groupconsisting of a roughness of the specimen, a roughness of a layer on thespecimen, and a roughness of a feature of the specimen.
 986. The deviceof claim 973, wherein the stage and the measurement device are coupledto a process tool selected from the group consisting of a lithographytool, an atomic layer deposition tool, a cleaning tool, and an etchtool.
 987. The device of claim 973, wherein the stage and themeasurement device are coupled to a process tool.
 988. The device ofclaim 973, wherein the stage and the measurement device are coupled to aprocess tool, and wherein the process tool is selected from the groupconsisting of a lithography tool, an etch tool, and a deposition tool.989. A method for fabricating a semiconductor device, comprising:forming a portion of the semiconductor device upon a specimen; disposingthe specimen upon a stage, wherein the stage is coupled to a measurementdevice, and wherein the measurement device comprises an illuminationsystem and a detection system; directing energy toward a surface of thespecimen using the illumination system; detecting energy propagatingfrom the surface of the specimen using the detection system; generatingone or more output signals responsive to the detected energy; andprocessing the one or more output signals to determine a first propertyand a second property of the specimen, wherein the first propertycomprises a critical dimension of the specimen, and wherein the secondproperty comprises a presence of defects on the portion of the specimen.990. The method of claim 989, wherein the illumination system comprisesa single energy source.
 991. The method of claim 989, wherein theillumination system comprises more than one energy source.
 992. Themethod of claim 989, wherein the detection system comprises a singleenergy sensitive device.
 993. The method of claim 989, wherein thedetection system comprises more than one energy sensitive devices. 994.The method of claim 989, wherein the measurement device is selected fromthe group consisting of a non-imaging scatterometer, a scatterometer, aspectroscopic scatterometer, a reflectometer, a spectroscopicreflectometer, a coherence probe microscope, an ellipsometer, aspectroscopic ellipsometer, a bright field imaging device, a dark fieldimaging device, a bright field and dark field imaging device, anon-imaging bright field device, a non-imaging dark field device, and anon-imaging bright field and dark field device.
 995. The method of claim989, wherein the measurement device further comprises at least a firstmeasurement device and a second measurement device, and wherein thefirst and second measurement devices are selected from the groupconsisting of a non-imaging scatterometer, a scatterometer, aspectroscopic scatterometer, a reflectometer, a spectroscopicreflectometer, a coherence probe microscope, an ellipsometer, aspectroscopic ellipsometer, a bright field imaging device, a dark fieldimaging device, a bright field and dark field imaging device, anon-imaging bright field device, a non-imaging dark field device, and anon-imaging bright field and dark field device.
 996. The method of claim989, wherein the measurement device further comprises at least a firstmeasurement device and a second measurement device, and wherein opticalelements of the first measurement device comprise optical elements ofthe second measurement device.
 997. The method of claim 989, wherein thedefects comprise micro defects and macro defects.
 998. The method ofclaim 989, wherein the defects comprises micro defects or macro defects.999. The method of claim 989, further comprising: directing energytoward a bottom surface of the specimen; and detecting energypropagating from the bottom surface of the specimen, wherein the secondproperty comprises a presence of defects on the bottom surface of thespecimen.
 1000. The method of claim 999, wherein the defects comprisemacro defects.
 1001. The method of claim 989, further comprisingprocessing the one or more output signals to determine a third propertyof the specimen, wherein the third property is selected from the groupconsisting of a roughness of the specimen, a roughness of a layer on thespecimen, and a roughness of a feature of the specimen.
 1002. The methodof claim 1001, wherein the stage and the measurement device are coupledto a process tool selected from the group consisting of a lithographytool, an atomic layer deposition tool, a cleaning tool, and an etchtool.
 1003. The method of claim 989, wherein the stage and themeasurement device are coupled to a process tool.
 1004. The method ofclaim 989, wherein the stage and the measurement device are coupled to aprocess tool, and wherein the process tool is selected from the groupconsisting of a lithography tool and an etch tool.
 1005. A systemconfigured to determine at least two properties of a specimen duringuse, comprising: a stage configured to support the specimen during use;a measurement device coupled to the stage, comprising: an illuminationsystem configured to direct energy toward a surface of the specimenduring use; and a detection system coupled to the illumination systemand configured to detect energy propagating from the surface of thespecimen during use, wherein the measurement device is configured togenerate one or more output signals responsive to the detected energyduring use; a local processor coupled to the measurement device andconfigured to at least partially process the one or more output signalsduring use; and a remote controller computer coupled to the localprocessor, wherein the remote controller computer is configured toreceive the at least partially processed one or more output signals andto determine a first property and a second property of the specimen fromthe at least partially processed one or more output signals during use,wherein the first property comprises a critical dimension of thespecimen, and wherein the second property comprises a presence ofdefects on the specimen.
 1006. The system of claim 1005, wherein themeasurement device is selected from the group consisting of anon-imaging scatterometer, a scatterometer, a spectroscopicscatterometer, a reflectometer, a spectroscopic reflectometer, acoherence probe microscope, a spectroscopic ellipsometer, anellipsometer, a bright field imaging device, a dark field imagingdevice, a bright field and dark field imaging device, a non-imagingbright field device, a non-imaging dark field device, and a non-imagingbright field and dark field device.
 1007. The system of claim 1005,wherein the measurement device further comprises at least a firstmeasurement device and a second measurement device, and wherein thefirst and second measurement devices are selected from the groupconsisting of a non-imaging scatterometer, a scatterometer, aspectroscopic scatterometer, a reflectometer, a spectroscopicreflectometer, a coherence probe microscope, an ellipsometer, aspectroscopic ellipsometer, a bright field imaging device, a dark fieldimaging device, a bright field and dark field imaging device, anon-imaging bright field device, a non-imaging dark field device, and anon-imaging bright field and dark field device.
 1008. The system ofclaim 1005, wherein the measurement device further comprises at least afirst measurement device and a second measurement device, and whereinoptical elements of the first measurement device comprise opticalelements of the second measurement device.
 1009. The system of claim1005, wherein the defects comprise micro defects and macro defects.1010. The system of claim 1005, wherein the defects comprises microdefects or macro defects.
 1011. The system of claim 1005, wherein theillumination system is further configured to direct energy toward abottom surface of the specimen during use, wherein the detection systemis further configured to detect energy propagating from the bottomsurface of the specimen during use, and wherein the second propertyfurther comprises a presence of defects on the bottom surface of thespecimen.
 1012. The system of claim 1011, wherein the defects comprisemacro defects.
 1013. The system of claim 1005, wherein the remotecontroller computer is further configured to determine a third propertyof the specimen from the at least partially processed one or more outputsignals during use, and wherein the third property is selected from thegroup consisting of a roughness of the specimen, a roughness of a layeron the specimen, and a roughness of a feature of the specimen.
 1014. Thesystem of claim 1013, wherein the system is coupled to a process tootselected from the group consisting of a lithography tool, an atomiclayer deposition tool, a cleaning tool, and an etch tool.
 1015. Thesystem of claim 1005, wherein the illumination system is furtherconfigured to direct energy to multiple locations on the surface of thespecimen substantially simultaneously, and wherein the detection systemis further configured to detect energy propagating from the multiplelocations on the surface of the specimen substantially simultaneouslysuch that one or more of the at least two properties of the specimen canbe determined at the multiple locations substantially simultaneously.1016. The system of claim 1005, wherein the remote controller computeris coupled to a process tool.
 1017. The system of claim 1005, whereinthe remote controller computer is coupled to a process tool, and whereinthe process tool is selected from a group consisting of a lithographytool, an etch tool, and a deposition tool.
 1018. The system of claim1005, wherein the remote controller computer is coupled to a processtool, and wherein the remote controller computer is further configuredto alter a parameter of one or more instruments coupled to the processtool in response to the determined first or second property using afeedback control technique during use.
 1019. The system of claim 1005,wherein the remote controller computer is coupled to a process tool, andwherein the remote controller computer is further configured to alter aparameter of one or more instruments coupled to the process tool inresponse to the determined first or second property using a feedforwardcontrol technique during use.
 1020. The system of claim 1005, whereinthe remote controller computer is coupled to a process tool, and whereinthe remote controller computer is further configured to monitor aparameter of one or more instrument coupled to the process tool duringuse.
 1021. The system of claim 1005, wherein the remote controllercomputer is coupled to a process tool, wherein the remote controllercomputer is further configured to monitor a parameter of one or moreinstruments coupled to the process tool during use, and wherein theremote controller computer is further configured to determine arelationship between the determined properties and at least one of themonitored parameters during use.
 1022. The system of claim 1005, whereinthe remote controller computer is coupled to a process tool, wherein theremote controller computer is further configured to monitor a parameterof one or more instruments coupled to the process tool during use,wherein the remote controller computer is further configured todetermine a relationship between the determined properties and the atleast one of the monitored parameters during use, and wherein the remotecontroller computer is further configured to alter a parameter of atleast one of the instruments in response to the relationship during use.1023. The system of claim 1005, wherein the system and the remotecontroller computer are coupled to a process tool, wherein the processtool is configured to perform a step of a process, wherein theillumination system is further configured to direct energy toward thesurface of the specimen during the process step, wherein the detectionsystem is further configured to detect energy propagating from thesurface of the specimen during the process step, and wherein the remotecontroller computer is further configured to determine the first andsecond properties of the specimen during the process step.
 1024. Thesystem of claim 1023, wherein the remote controller computer is furtherconfigured to obtain a signature characterizing the process step duringuse, and wherein the signature comprises at least one singularityrepresentative of an end of the process step.
 1025. The system of claim1023, wherein the remote controller computer is further configured toalter a parameter of one or more instruments coupled to the process toolin response to the determined first or second property using an in situcontrol technique during use.
 1026. The system of claim 1005, wherein aprocess tool comprises a first process chamber and a second processchamber, and wherein the stage is further configured to move thespecimen from the first process chamber to the second process chamberduring use.
 1027. The system of claim 1026, wherein the illuminationsystem is further configured to direct energy toward the surface of thespecimen during said moving, wherein the detection system is furtherconfigured to detect energy propagating from the surface of the specimenduring said moving, and wherein the remote controller computer isfurther configured to determine the first and second properties of thespecimen during said moving.
 1028. The system of claim 1005, wherein theremote controller computer is further configured to compare at least oneof the determined properties of the specimen and properties of aplurality of specimens during use.
 1029. The system of claim 1005,wherein the remote controller computer is further configured to compareat least one of the determined properties of the specimen to apredetermined range for the property during use.
 1030. The system ofclaim 1029, wherein the remote controller computer is further configuredto generate an output signal if at least one of the determinedproperties of the specimen is outside of the predetermined range for theproperty during use.
 1031. The system of claim 1005, wherein the remotecontroller computer is further configured to alter a sampling frequencyof the measurement device in response to the determined first or secondproperty of the specimen during use.
 1032. The system of claim 1005,wherein the remote controller computer is further configured to alter aparameter of one or more instruments coupled to the measurement devicein response to the determined first or second property using a feedbackcontrol technique during use.
 1033. The system of claim 1005, whereinthe remote controller computer is further configured to alter aparameter of one or more instruments coupled to the measurement devicein response to the determined first or second property using afeedforward control technique during use.
 1034. The system of claim1005, wherein the remote controller computer is further configured togenerate a database during use, wherein the database comprises thedetermined first and second properties of the specimen.
 1035. The systemof claim 1034, wherein the remote controller computer is furtherconfigured to calibrate the measurement device using the database duringuse.
 1036. The system of claim 1034, wherein the remote controllercomputer is further configured to monitor output signals generated bymeasurement device using the database during use.
 1037. The system ofclaim 1034, wherein the database further comprises first and secondproperties of a plurality of specimens.
 1038. The system of claim 1037,wherein the first and second properties of the plurality of specimensare determined using a plurality of measurement devices.
 1039. Thesystem of claim 1038, wherein the remote controller computer is furthercoupled to the plurality of measurement devices.
 1040. The system ofclaim 1039, wherein the remote controller computer is further configuredto calibrate the plurality of measurement devices using the databaseduring use.
 1041. The system of claim 1039, wherein the remotecontroller computer is further configured to monitor output signalsgenerated by the plurality of measurement devices using the databaseduring use.
 1042. The system of claim 1005, wherein the remotecontroller computer is further coupled to a plurality of measurementdevices, and wherein each of the plurality of measurement devices iscoupled to at least one of a plurality of process tools.
 1043. Thesystem of claim 1042, wherein the remote controller computer is furthercoupled to at least one of the plurality of process tools, and whereinthe remote controller computer is further configured to alter aparameter of one or more instruments coupled to at least one of theplurality of process tools during use.
 1044. A method for determining atleast two properties of a specimen, comprising: disposing the specimenupon a stage, wherein the stage is coupled to a measurement device, andwherein the measurement device comprises an illumination system and adetection system; directing energy toward a surface of the specimenusing the illumination system; detecting energy propagating from thesurface of the specimen using the detection system; generating one ormore output signals in response to the detected energy; and processingthe one or more output signals to determine a first property and asecond property of the specimen, wherein the first property comprises acritical dimension of the specimen, and wherein the second propertycomprises a presence of defects on the specimen, comprising: at leastpartially processing the one or more output signals using a localprocessor, wherein the local processor is coupled to the measurementdevice; sending the partially processed one or more output signals fromthe local processor to a remote controller computer; and furtherprocessing the partially processed one or more output signals using theremote controller computer.
 1045. The method of claim 1044, wherein themeasurement device is selected from the group consisting of anon-imaging scatterometer, a scatterometer, a spectroscopicscatterometer, a reflectometer, a spectroscopic reflectometer, acoherence probe microscope, an ellipsometer, a spectroscopicellipsometer, a bright field imaging device, a dark field imagingdevice, a bright field and dark field imaging device, a non-imagingbright field device, a non-imaging dark field device, and a non-imagingbright field and dark field device.
 1046. The method of claim 1044,wherein the measurement device further comprises at least a firstmeasurement device and a second measurement device, and wherein thefirst and second measurement devices are selected from the groupconsisting of a non-imaging scatterometer, a scatterometer, aspectroscopic scatterometer, a reflectometer, a spectroscopicreflectometer, a coherence probe microscope, an ellipsometer, aspectroscopic ellipsometer, a bright field imaging device, a dark fieldimaging device, a bright field and dark field imaging device, anon-imaging bright field device, a non-imaging dark field device, and anon-imaging bright field and dark field device.
 1047. The method ofclaim 1044, wherein the measurement device further comprises at least afirst measurement device and a second measurement device, and whereinoptical elements of the first measurement device comprise opticalelements of the second measurement device.
 1048. The method of claim1044, wherein the defects comprise micro defects and macro defects.1049. The method of claim 1044, wherein the defects comprises microdefects or macro defects.
 1050. The method of claim 1044, furthercomprising: directing energy toward a bottom surface of the specimen;and detecting energy propagating from the bottom surface of thespecimen, wherein the second property comprises a presence of defects onthe bottom surface of the specimen.
 1051. The method of claim 1050,wherein the defects comprise macro defects.
 1052. The method of claim1044, further comprising processing the one or more output signals todetermine a third property of the specimen, wherein the third propertyis selected from the group consisting of a roughness of the specimen, aroughness of a layer on the specimen, and a roughness of a feature ofthe specimen.
 1053. The method of claim 1052, wherein the stage and themeasurement device are coupled to a process tool selected from the groupconsisting of a lithography tool, an atomic layer deposition tool, acleaning tool, and an etch tool.
 1054. The method of claim 1044, furthercomprising directing energy toward multiple locations on the surface ofthe specimen substantially simultaneously and detecting energypropagating from the multiple locations substantially simultaneouslysuch that one or more of the at least two properties of the specimen canbe determined at the multiple locations substantially simultaneously.1055. The method of claim 1044, wherein the remote controller computeris coupled to a process tool.
 1056. The method of claim 1044, whereinthe remote controller computer is coupled to a process tool, and whereinthe process tool is selected from the group consisting of a lithographytool, an etch tool, and a deposition tool.
 1057. The method of claim1044, wherein the remote controller computer is coupled to a processtool, the method further comprising altering a parameter of one or moreinstruments coupled to the process tool using the remote controllercomputer in response to the determined first or second property of thespecimen using a feedback control technique.
 1058. The method of claim1044, wherein the remote controller computer is coupled to a processtool, the method further comprising altering a parameter of one or moreinstruments coupled to the process tool using the remote controllercomputer in response to the determined first or second property of thespecimen using a feedforward control technique.
 1059. The method ofclaim 1044, wherein the remote controller computer is coupled to aprocess tool, the method further comprising monitoring a parameter ofone or more instruments coupled to the process tool using the remotecontroller computer.
 1060. The method of claim 1059, further comprisingdetermining a relationship between the determined properties and themonitored parameters using the remote controller computer.
 1061. Themethod of claim 1060, further comprising altering a parameter of atleast one of the instruments in response to the relationship using theremote controller computer.
 1062. The method of claim 1044, wherein theillumination system and the detection system are coupled to a processchamber of the process tool, the method further comprising performingsaid directing and said detecting during a process step.
 1063. Themethod of claim 1062, further comprising obtaining a signaturecharacterizing the process step using the remote controller computer,wherein the signature comprises at least one singularity representativeof an end of the process step.
 1064. The method of claim 1062, furthercomprising altering a parameter of one or more instruments coupled tothe process tool using the remote controller computer in response to thedetermined first or second property using an in situ control technique.1065. The method of claim 1044, further comprising: moving the specimenfrom a first process chamber to a second process chamber using thestage; performing said directing and said detecting during said movingthe specimen.
 1066. The method of claim 1044, further comprisingcomparing at least one of the determined properties of the specimen anddetermined properties of a plurality of specimens using the remotecontroller computer.
 1067. The method of claim 1044, further comprisingcomparing at least one of the determined properties of the specimen to apredetermined range for the property using the remote controllercomputer.
 1068. The method of claim 1067, further comprising generatingan output signal using the remote controller computer if at least one ofthe determined properties of the specimen is outside of thepredetermined range for the property.
 1069. The method of claim 1044,wherein the remote controller computer is coupled to the measurementdevice.
 1070. The method of claim 1069, further comprising altering asampling frequency of the measurement device using the remote controllercomputer in response to the determined first or second property of thespecimen.
 1071. The method of claim 1069, further comprising altering aparameter of one or more instruments coupled to the measurement deviceusing the remote controller computer in response to the determined firstor second property using a feedback control technique.
 1072. The methodof claim 1069, further comprising altering a parameter of one or moreinstruments coupled to the measurement device using the remotecontroller computer in response to the determined first or secondproperty using a feedforward control technique.
 1073. The method ofclaim 1044, further comprising generating a database using the remotecontroller computer, wherein the database comprises the determined firstand second properties of the specimen.
 1074. The method of claim 1073,further comprising calibrating the measurement device using the databaseand the remote controller computer.
 1075. The method of claim 1073,further comprising monitoring output signals of the measurement deviceusing the database and the remote controller computer.
 1076. The methodof claim 1073, wherein the database further comprises first and secondproperties of a plurality of specimens.
 1077. The method of claim 1076,wherein the first and second properties of the plurality of specimensare generated using a plurality of measurement devices.
 1078. The methodof claim 1077, further comprising calibrating the plurality ofmeasurement devices using the database and the remote controllercomputer.
 1079. The method of claim 1077, further comprising monitoringoutput signals of the plurality of measurement devices using thedatabase and the remote controller computer.
 1080. The method of claim1044, further comprising sending the at least partially processed one ormore output signals from a plurality of local processors to the remotecontroller computer, wherein each of the plurality of local processorsis coupled to one of a plurality of measurement devices.
 1081. Themethod of claim 1080, wherein each of the plurality of measurementdevices is coupled to at least one of a plurality of process tools.1082. The method of claim 1081, further comprising altering a parameterof one or more instruments coupled to at least one of the plurality ofprocess tools using the remote controller computer in response to thedetermined first or second property of the specimen.
 1083. A systemconfigured to determine at least two properties of a specimen duringuse, comprising: a stage configured to support the specimen during use;a measurement device coupled to the stage, comprising: an illuminationsystem configured to direct energy toward a surface of the specimenduring use; and a detection system coupled to the illumination systemand configured to detect energy propagating from the surface of thespecimen during use, wherein the measurement device is configured togenerate one or more output signals in response to the detected energyduring use; and a processor coupled to the measurement device andconfigured to determine a first property and a second property of thespecimen from the one or more output signals during use, wherein thefirst property comprises a critical dimension of the specimen, andwherein the second property comprises a thin film characteristic of thespecimen.
 1084. The system of claim 1083, wherein the stage is furtherconfigured to move laterally during use.
 1085. The system of claim 1083,wherein the stage is further configured to move rotatably during use.1086. The system of claim 1083, wherein the stage is further configuredto move laterally and rotatably during use.
 1087. The system of claim1083, wherein the illumination system comprises a single energy source.1088. The system of claim 1083, wherein the illumination systemcomprises more than one energy source.
 1089. The system of claim 1083,wherein the detection system comprises a single energy sensitive device.1090. The system of claim 1083, wherein the detection system comprisesmore than one energy sensitive devices.
 1091. The system of claim 1083,wherein the measurement device further comprises a non-imagingscatterometer.
 1092. The system of claim 1083, wherein the measurementdevice further comprises a scatterometer.
 1093. The system of claim1083, wherein the measurement device further comprises a spectroscopicscatterometer.
 1094. The system of claim 1083, wherein the measurementdevice further comprises a reflectometer.
 1095. The system of claim1083, wherein the measurement device further comprises a spectroscopicreflectometer.
 1096. The system of claim 1083, wherein the measurementdevice further comprises a coherence probe microscope.
 1097. The systemof claim 1083, wherein the measurement device further comprises a brightfield imaging device.
 1098. The system of claim 1083, wherein themeasurement device further comprises a dark field imaging device. 1099.The system of claim 1083, wherein the measurement device furthercomprises a bright field and dark field imaging device.
 1100. The systemof claim 1083, wherein the measurement device further comprises anellipsometer.
 1101. The system of claim 1083, wherein the measurementdevice further comprises a spectroscopic ellipsometer.
 1102. The systemof claim 1083, wherein the measurement device further comprises a dualbeam spectrophotometer.
 1103. The system of claim 1083, wherein themeasurement device further comprises a beam profile ellipsometer. 1104.The system of claim 1083, wherein the measurement device furthercomprises at least a first measurement device and a second measurementdevice, and wherein the first and second measurement devices areselected from the group consisting of a non-imaging scatterometer, ascatterometer, a spectroscopic scatterometer, a reflectometer, aspectroscopic reflectometer, a coherence probe microscope, a brightfield imaging device, a dark field imaging device, a bright field anddark field imaging device, an ellipsometer, a spectroscopicellipsometer, a dual beam spectrophotometer, a beam profileellipsometer, a photo-acoustic device, and a grating X-rayreflectometer.
 1105. The system of claim 1083, wherein the measurementdevice further comprises at least a first measurement device and asecond measurement device, and wherein optical elements of the firstmeasurement device comprise optical elements of the second measurementdevice.
 1106. The system of claim 1083, wherein the illumination systemand the detection system comprise non-optical components, and whereinthe detected energy is responsive to a non-optical characteristic of thesurface of the specimen.
 1107. The system of claim 1083, wherein themeasurement device further comprises at least an eddy current device anda spectroscopic ellipsometer.
 1108. The system of claim 1083, whereinthe measurement device further comprises at least an eddy current deviceand a spectroscopic ellipsometer, and wherein the system is coupled toan atomic layer deposition tool.
 1109. The system of claim 1083, whereinthe processor is further configured to determine a third property of thespecimen from the one or more output signals during use, and wherein thethird property is selected from the group consisting of a roughness ofthe specimen, a roughness of a layer on the specimen, and a roughness ofa feature of the specimen.
 1110. The system of claim 1109, wherein thesystem is coupled to a process tool selected from the group consistingof a lithography tool, an atomic layer deposition tool, a cleaning tool,and an etch tool.
 1111. The system of claim 1083, wherein the system isfurther configured to determine at least the two properties of thespecimen substantially simultaneously during use.
 1112. The system ofclaim 1083, wherein the illumination system is further configured todirect energy to multiple locations on the surface of the specimensubstantially simultaneously, and wherein the detection system isfurther configured to detect energy propagating from the multiplelocations on the surface of the specimen substantially simultaneouslysuch that one or more of the at least two properties of the specimen canbe determined at the multiple locations substantially simultaneously.1113. The system of claim 1083, wherein the system is coupled to aprocess tool.
 1114. The system of claim 1083, wherein the system iscoupled to a process tool, and wherein the system is disposed within theprocess tool.
 1115. The system of claim 1083, wherein the system iscoupled to a process tool, and wherein the system is arranged laterallyproximate to the process tool.
 1116. The system of claim 1083, whereinthe system is coupled to a process tool, and wherein the process toolcomprises a wafer handler configured to move the specimen to the stageduring use.
 1117. The system of claim 1083, wherein the system iscoupled to a process tool, and wherein the stage is configured to movethe specimen from the system to the process tool during use.
 1118. Thesystem of claim 1083, wherein the system is coupled to a process tool,and wherein the system is further configured to determine at least thetwo properties of the specimen while the specimen is waiting betweenprocess steps.
 1119. The system of claim 1083, wherein the system iscoupled to a process tool, wherein the process tool comprises a supportdevice configured to support the specimen during a process step, andwherein an upper surface of the support device is substantially parallelto an upper surface of the stage.
 1120. The system of claim 1083,wherein the system is coupled to a process tool, wherein the processtool comprises a support device configured to support the specimenduring a process step, and wherein an upper surface of the stage isangled with respect to an upper surface of the support device.
 1121. Thesystem of claim 1083, wherein the system is coupled to a process tool,and wherein the process tool is selected from the group consisting of alithography tool, an etch tool, and a deposition tool.
 1122. The systemof claim 1083, wherein the system comprises a measurement chamber,wherein the stage and the measurement device are disposed within themeasurement chamber, and wherein the measurement chamber is coupled to aprocess tool.
 1123. The system of claim 1083, wherein the systemcomprises a measurement chamber, wherein the stage and the measurementdevice are disposed within the measurement chamber, and wherein themeasurement chamber is disposed within a process tool.
 1124. The systemof claim 1083, wherein the system comprises a measurement chamber,wherein the stage and the measurement device are disposed within themeasurement chamber, and wherein the measurement chamber is arrangedlaterally proximate to a process chamber of a process tool.
 1125. Thesystem of claim 1083, wherein the system comprises a measurementchamber, wherein the stage and the measurement device are disposedwithin the measurement chamber, and wherein the measurement chamber isarranged vertically proximate to a process chamber of is process tool.1126. The system of claim 1083, wherein a process tool comprises aprocess chamber, wherein the stage is disposed within the processchamber, and wherein the stage is further configured to support thespecimen during a process step.
 1127. The system of claim 1126, whereinthe processor is further configured to determine at least the twoproperties of the specimen during the process step.
 1128. The system ofclaim 1127, wherein the processor is further configured to obtain asignature characterizing the process step during use, and wherein thesignature comprises at least one singularity representative of an end ofthe process step.
 1129. The system of claim 1127, wherein the processoris coupled to the process tool and is further configured to alter aparameter of one or more instruments coupled to the process tool inresponse to the determined properties using an in situ control techniqueduring use.
 1130. The system of claim 1083, wherein a process toolcomprises a first process chamber and a second process chamber, andwherein the stage is further configured to move the specimen from thefirst process chamber to the second process chamber during use. 1131.The system of claim 1130, wherein the system is further configured todetermine at least the two properties of the specimen as the stage ismoving the specimen from the first process chamber to the second processchamber.
 1132. The system of claim 1083, wherein the processor isfurther configured to compare at least one of the determined propertiesof the specimen and properties of a plurality of specimens during use.1133. The system of claim 1083, wherein the processor is furtherconfigured to compare at least one of the determined properties of thespecimen to a predetermined range for the property during use.
 1134. Thesystem of claim 1133, wherein the processor is further configured togenerate an output signal if at least one of the determined propertiesof the specimen is outside of the predetermined range for the propertyduring use.
 1135. The system of claim 1083, wherein the processor isfurther configured to alter a sampling frequency of the measurementdevice in response to the determined first or second property of thespecimen during use.
 1136. The system of claim 1083, wherein theprocessor is further configured to alter a parameter of one or moreinstruments coupled to the measurement device in response to thedetermined first or second property using a feedback control techniqueduring use.
 1137. The system of claim 1083, wherein the processor isfarther configured to alter a parameter of one or more instrumentscoupled to the measurement device in response to the determined first orsecond property using a feedforward control technique during use. 1138.The system of claim 1083, wherein the processor is further configured togenerate a database during use, wherein the database comprises thedetermined first and second properties of the specimen.
 1139. The systemof claim 1138, wherein the processor is further configured to calibratethe measurement device using the database during use.
 1140. The systemof claim 1139, wherein the processor is further configured to monitoroutput signals generated by measurement device using the database duringuse.
 1141. The system of claim 1139, wherein the database furthercomprises first and second properties of a plurality of specimens. 1142.The system of claim 1141, wherein the first and second properties of theplurality of specimens are determined using the measurement device.1143. The system of claim 1141, wherein the first and second propertiesof the plurality of specimens are determined using a plurality ofmeasurement devices.
 1144. The system of claim 1143, wherein theprocessor is further coupled to the plurality of measurement devices.1145. The system of claim 1144, wherein the processor is furtherconfigured to calibrate the plurality of measurement devices using thedatabase during use.
 1146. The system of claim 1144, wherein theprocessor is further configured to monitor output signals generated bythe plurality of measurement devices using the database during use.1147. The system of claim 1083, further comprising a stand alone systemcoupled to the system, wherein the stand alone system is configured tobe calibrated with a calibration standard during use, and wherein thestand alone system is further configured to calibrate the system duringuse.
 1148. The system of claim 1083, further comprising a stand alonesystem coupled the system and at least one additional system, whereinthe stand alone system is configured to be calibrated with a calibrationstandard during use, and wherein the stand alone system is furtherconfigured to calibrate the system and at least the one additionalsystem during use.
 1149. The system of claim 1083, wherein the system isfurther configured to determine at least the two properties of thespecimen at more than one position on the specimen, wherein the specimencomprises a wafer, and wherein the processor is configured to alter atleast one parameter of one or more instruments coupled to a process toolin response to at least one of the determined properties of the specimenat the more than one position on the specimen to reduce within wafervariation of at least one of the determined properties.
 1150. The systemof claim 1083, wherein the processor is further coupled to a processtool.
 1151. The system of claim 1150, wherein the processor is furtherconfigured to alter a parameter of one or more instruments coupled tothe process tool in response to the determined first or second propertyusing a feedback control technique during use.
 1152. The system of claim1150, wherein the processor is further configured to alter a parameterof one or more instruments coupled to the process tool in response tothe determined first or second property using a feedforward controltechnique during use.
 1153. The system of claim 1150, wherein theprocessor is further configured to monitor a parameter of one or moreinstruments coupled to the process tool during use.
 1154. The system ofclaim 1153, wherein the processor is further configured to determine arelationship between the determined properties and the monitoredparameters during use.
 1155. The system of claim 1154, wherein theprocessor is further configured to alter a parameter of one or moreinstruments coupled to the process tool in response to the relationshipduring use.
 1156. The system of claim 1083, wherein the processor isfurther coupled to a plurality of measurement devices, and wherein eachof the plurality of measurement devices is coupled to at least one of aplurality of process tools.
 1157. The system of claim 1083, wherein theprocessor comprises a local processor coupled to the measurement deviceand a remote controller computer coupled to the local processor, whereinthe local processor is configured to at least partially process the oneor more output signals during use, and wherein the remote controllercomputer is configured to further process the at least partiallyprocessed one or more output signals during use.
 1158. The system ofclaim 1157, wherein the local processor is further configured todetermine the first property and the second property of the specimenduring use.
 1159. The system of claim 1157, wherein the remotecontroller computer is further configured to determine the firstproperty and the second property of the specimen during use.
 1160. Amethod for determining at least two properties of a specimen,comprising: disposing the specimen upon a stage, wherein the stage iscoupled to a measurement device, and wherein the measurement devicecomprises an illumination system and a detection system; directingenergy toward a surface of the specimen using the illumination system;detecting energy propagating from the surface of the specimen using thedetection system; generating one or more output signals in response tothe detected energy; and processing the one or more output signals todetermine a first property and a second property of the specimen,wherein the first property comprises a critical dimension of thespecimen, and wherein the second property comprises a thin filmcharacteristic of the specimen.
 1161. The method of claim 1160, furthercomprising laterally moving the stage during said directing energy andsaid detecting energy.
 1162. The method of claim 1160, furthercomprising rotatably moving the stage during said directing energy andsaid detecting energy.
 1163. The method of claim 1160, furthercomprising laterally and rotatably moving the stage during saiddirecting energy and said detecting energy.
 1164. The method of claim1160, wherein the illumination system comprises a single energy source.1165. The method of claim 1160, wherein the illumination systemcomprises more than one energy source.
 1166. The method of claim 1160,wherein the detection system comprises a single energy sensitive device.1167. The method of claim 1160, wherein the detection system comprisesmore than one energy sensitive devices.
 1168. The method of claim 1160,wherein the measurement device further comprises a non-imagingscatterometer.
 1169. The method of claim 1160, wherein the measurementdevice further comprises a scatterometer.
 1170. The method of claim1160, wherein the measurement device further comprises a spectroscopicscatterometer.
 1171. The method of claim 1160, wherein the measurementdevice further comprises a reflectometer.
 1172. The method of claim1160, wherein the measurement device further comprises a spectroscopicreflectometer.
 1173. The method of claim 1160, wherein the measurementdevice further comprises a coherence probe microscope.
 1174. The methodof claim 1160, wherein the measurement device further comprises a brightfield imaging device.
 1175. The method of claim 1160, wherein themeasurement device further comprises a dark field imaging device. 1176.The method of claim 1160, wherein the measurement device furthercomprises a bright field and dark field imaging device.
 1177. The methodof claim 1160, wherein the measurement device further comprises anellipsometer.
 1178. The method of claim 1160, wherein the measurementdevice further comprises a spectroscopic ellipsometer.
 1179. The methodof claim 1160, wherein the measurement device further comprises a dualbeam spectrophotometer.
 1180. The method of claim 1160, wherein themeasurement device further comprises a beam profile ellipsometer. 1181.The method of claim 1160, wherein the measurement device furthercomprises at least a first measurement device and a second measurementdevice, and wherein the first and second measurement devices areselected from the group consisting of a non-imaging scatterometer, ascatterometer, a spectroscopic scatterometer, a reflectometer, aspectroscopic reflectometer, a coherence probe microscope, a brightfield imaging device, a dark field imaging device, a bright field anddark field imaging device, an ellipsometer, a spectroscopicellipsometer, a dual beam spectrophotometer, a beam profileellipsometer, a photo-acoustic device, and a grating X-rayreflectometer.
 1182. The method of claim 1160, wherein the measurementdevice further comprises at least a first measurement device and asecond measurement device, and wherein optical elements of the firstmeasurement device comprise optical elements of the second measurementdevice.
 1183. The method of claim 1160, wherein the measurement devicecomprises nonoptical components, and wherein detecting energy comprisesmeasuring a non-optical characteristic of the surface of the specimen.1184. The method of claim 1160, wherein the measurement device furthercomprises at least an eddy current device and a spectroscopicellipsometer.
 1185. The method of claim 1160, wherein the measurementdevice further comprises at least an eddy current device and aspectroscopic ellipsometer, and wherein the measurement device isfurther coupled to an atomic layer deposition tool.
 1186. The method ofclaim 1160, further comprising processing the one or more output signalsto determine a third property of the specimen, wherein the thirdproperty is selected from the group consisting of a roughness of thespecimen, a roughness of a layer on the specimen, and a roughness of afeature of the specimen.
 1187. The method of claim 1186, wherein thestage and the measurement device are coupled to a process tool selectedfrom the group consisting of a lithography tool, an atomic layerdeposition tool, a cleaning tool, and an etch tool.
 1188. The method ofclaim 1160, wherein processing the one or more output signals todetermine the first and second properties of the specimen comprisessubstantially simultaneously determining the first and second propertiesof the specimen.
 1189. The method of claim 1160, further comprisingdirecting energy toward multiple locations on the surface of thespecimen substantially simultaneously and detecting energy propagatingfrom the multiple locations substantially simultaneously such that oneor more of the at least two properties of the specimen can be determinedat the multiple locations substantially simultaneously.
 1190. The methodof claim 1160, wherein the stage and the measurement device are coupledto a process tool.
 1191. The method of claim 1160, wherein the stage andthe measurement device are coupled to a process tool, and wherein thestage and the measurement device are arranged laterally proximate to theprocess tool.
 1192. The method of claim 1160, wherein the stage and themeasurement device are coupled to a process tool, and wherein the stageand the measurement device are disposed within the process tool. 1193.The method of claim 1160, wherein the stage and the measurement deviceare coupled to a process tool, and wherein the process tool is selectedfrom the group consisting of a lithography tool, an etch tool, and adeposition tool.
 1194. The method of claim 1160, wherein the stage andthe measurement device are coupled to a process tool, wherein theprocess tool comprises a wafer handler, and wherein disposing thespecimen upon the stage comprises moving the specimen from the processtool to the stage using the wafer handler.
 1195. The method of claim1160, wherein the stage and the measurement device are coupled to aprocess tool, the method further comprising moving the specimen to theprocess tool subsequent to said directing and said detecting using thestage.
 1196. The method of claim 1160, wherein the stage and themeasurement device are coupled to a process tool, the method furthercomprising determining at least the two properties of the specimen whilethe specimen is waiting between process steps.
 1197. The method of claim1160, wherein the stage and the measurement device are coupled to aprocess tool, wherein the process tool comprises a support deviceconfigured to support the specimen during a process step, and wherein anupper surface of the support device is substantially parallel to anupper surface of the stage.
 1198. The method of claim 1160, wherein thestage and the measurement device are coupled to a process tool, whereinthe process tool comprises a support device configured to support thespecimen during a process step, and wherein an upper surface of thestage is angled with respect to an upper surface of the support device.1199. The method of claim 1160, wherein the stage and the measurementdevice are disposed within a measurement chamber, and wherein themeasurement chamber is coupled to a process tool.
 1200. The method ofclaim 1160, wherein the stage and the measurement device are disposedwithin a measurement chamber, and wherein the measurement chamber isdisposed within the process tool.
 1201. The method of claim 1160,wherein the stage and the measurement device are disposed within ameasurement chamber, and wherein the measurement chamber is arrangedlaterally proximate to a process chamber of the process tool.
 1202. Themethod of claim 1160, wherein the stage and the measurement device aredisposed within a measurement chamber, and wherein the measurementchamber is arranged vertically proximate to a process chamber of theprocess tool.
 1203. The method of claim 1160, wherein disposing thespecimen upon the stage comprises disposing the specimen upon a supportdevice disposed within a process chamber of a process tool, and whereinthe support device is configured to support the specimen during aprocess step.
 1204. The method of claim 1203, further comprisingperforming said directing and said detecting during the process step.1205. The method of claim 1204, further comprising obtaining a signaturecharacterizing the process step, wherein the signature comprises atleast one singularity representative of an end of the process step.1206. The method of claim 1204, further comprising altering a parameterof one or more instrument coupled to the process tool in response to atleast one of the determined properties using an in situ controltechnique.
 1207. The method of claim 1160, further comprising moving thespecimen from a first process chamber to a second process chamber usingthe stage, wherein the first process chamber and the second processchamber are disposed within a process tool.
 1208. The method of claim1207, further comprising performing said directing and said detectingduring said moving the specimen from the first process chamber to thesecond process chamber.
 1209. The method of claim 1160, furthercomprising comparing at least one of the determined properties of thespecimen and determined properties of a plurality of specimens. 1210.The method of claim 1160, further comprising comparing at least one ofthe determined properties of the specimen to a predetermined range forthe property.
 1211. The method of claim 1210, further comprisinggenerating an output signal if at least one of the determined propertiesof the specimen is outside of the predetermined range for the property.1212. The method of claim 1160, further comprising altering a samplingfrequency of the measurement device in response to the determined firstor second properties of the specimen.
 1213. The method of claim 1160,further comprising altering a parameter of one or more instrumentscoupled to the measurement device in response to the determined first orsecond property using a feedback control technique.
 1214. The method ofclaim 1160, further comprising altering a parameter of one or moreinstruments coupled to the measurement device in response to thedetermined first or second property using a feedforward controltechnique.
 1215. The method of claim 1160, further comprising generatinga database, wherein the database comprises the determined first andsecond properties of the specimen.
 1216. The method of claim 1215,further comprising calibrating the measurement device using thedatabase.
 1217. The method of claim 1215, further comprising monitoringoutput signals of the measurement device using the database.
 1218. Themethod of claim 1215, wherein the database further comprises first andsecond properties of a plurality of specimens.
 1219. The method of claim1218, wherein the first and second properties of the plurality ofspecimens are generated using a plurality of measurement devices. 1220.The method of claim 1219, further comprising calibrating the pluralityof measurement devices using the database.
 1221. The method of claim1219, further comprising monitoring output signals of the plurality ofmeasurement devices using the database.
 1222. The method of claim 1160,wherein a stand alone system is coupled to the measurement device, themethod further comprising calibrating the stand alone system with acalibration standard and calibrating the measurement device with thestand alone system.
 1223. The method of claim 1160, wherein a standalone system is coupled to the measurement device and at least oneadditional measurement device, the method further comprising calibratingthe stand alone system with a calibration standard and calibrating themeasurement device an at least the one additional measurement devicewith the stand alone system.
 1224. The method of claim 1160, furthercomprising determining at least the two properties of the specimen atmore than one position on the specimen, wherein the specimen comprises awafer, the method further comprising altering at least one parameter ofone or more instruments coupled to a process tool in response to atleast one of the determined properties of the specimen at the more thanone position on the specimen to reduce within wafer variation of atleast one of the determined properties.
 1225. The method of claim 1160,further comprising altering a parameter of one or more instrumentscoupled to a process tool in response to the determined first or secondproperty of the specimen using a feedback control technique.
 1226. Themethod of claim 1160, further comprising altering a parameter of one ormore instruments coupled to a process tool in response to the determinedfirst or second property of the specimen using a feedforward controltechnique.
 1227. The method of claim 1160, further comprising monitoringa parameter of one or more instruments coupled to a process tool. 1228.The method of claim 1227, further comprising determining a relationshipbetween the determined properties and the monitored parameters. 1229.The method of claim 1228, further comprising altering a parameter of atleast one of the instruments in response to the relationship.
 1230. Themethod of claim 1160, further comprising altering a parameter of one ormore instrument coupled to a plurality of process tools in response tothe determined first or second property of the specimen.
 1231. Themethod of claim 1160, wherein processing the one or more output signalscomprises: at least partially processing the one or more output signalsusing a local processor, wherein the local processor is coupled to themeasurement device; sending the partially processed one or more outputsignals from the local processor to a remote controller computer; andfurther processing the partially processed one or more output signalsusing the remote controller computer.
 1232. The method of claim 1231,wherein at least partially processing the one or more output signalscomprises determining the first and second properties of the specimen.1233. The method of claim 1231, wherein further processing the partiallyprocessed one or more output signals comprises determining the first andsecond properties of the specimen.
 1234. A computer-implemented methodfor controlling a system configured to determine at least two propertiesof a specimen during use, wherein the system comprises a measurementdevice, comprising: controlling the measurement device, wherein themeasurement device comprises an illumination system and a detectionsystem, and wherein the measurement device is coupled to a stage,comprising: controlling the illumination system to direct energy towarda surface of the specimen; controlling the detection system to detectenergy propagating from the surface of the specimen; and generating oneor more output signals responsive to the detected energy; and processingthe one or more output signals to determine a first property and asecond property of the specimen, wherein the first property comprises acritical dimension of the specimen, and wherein the second propertycomprises a thin film characteristic of the specimen.
 1235. The methodof claim 1234, further comprising controlling the stage, wherein thestage is configured to support the specimen.
 1236. The method of claim1234, further comprising controlling the stage to move laterally duringsaid directing energy and said detecting energy.
 1237. The method ofclaim 1234, further comprising controlling the stage to move rotatablyduring said directing energy and said detecting energy.
 1238. The methodof claim 1234, further comprising controlling the stage to movelaterally and rotatably during said directing energy and said detectingenergy.
 1239. The method of claim 1234, wherein the illumination systemcomprises a single energy source.
 1240. The method of claim 1234,wherein the illumination system comprises more than one energy source.1241. The method of claim 1234, wherein the detection system comprises asingle energy sensitive device.
 1242. The method of claim 1234, whereinthe detection system comprises more than one energy sensitive devices.1243. The method of claim 1234, wherein the measurement device furthercomprises a non-imaging scatterometer.
 1244. The method of claim 1234,wherein the measurement device further comprises a scatterometer. 1245.The method of claim 1234, wherein the measurement device furthercomprises a spectroscopic scatterometer.
 1246. The method of claim 1234,wherein the measurement device further comprises a reflectometer. 1247.The method of claim 1234, wherein the measurement device furthercomprises a spectroscopic reflectometer.
 1248. The method of claim 1234,wherein the measurement device further comprises a coherence probemicroscope.
 1249. The method of claim 1234, wherein the measurementdevice further comprises a bright field imaging device.
 1250. The methodof claim 1234, wherein the measurement device further comprises a darkfield imaging device.
 1251. The method of claim 1234, wherein themeasurement device further comprises a bright field and dark fieldimaging device.
 1252. The method of claim 1234, wherein the measurementdevice further comprises an ellipsometer.
 1253. The method of claim1234, wherein the measurement device further comprises a spectroscopicellipsometer.
 1254. The method of claim 1234, wherein the measurementdevice further comprises a dual beam spectrophotometer.
 1255. The methodof claim 1234, wherein the measurement device further comprises a beamprofile ellipsometer.
 1256. The method of claim 1234, wherein themeasurement device further comprises at least a first measurement deviceand a second measurement device, and wherein the first and secondmeasurement devices are selected from the group consisting of anon-imaging scatterometer, a scatterometer, a spectroscopicscatterometer, a reflectometer, a spectroscopic reflectometer, acoherence probe microscope, a bright field imaging device, a dark fieldimaging device, a bright field and dark field imaging device, anellipsometer, a spectroscopic ellipsometer, a dual beamspectrophotometer, a beam profile ellipsometer, a photo-acoustic device,and a grazing X-ray reflectometer.
 1257. The method of claim 1234,wherein the measurement device further comprises at least a firstmeasurement device and a second measurement device, and wherein opticalelements of the first measurement device comprise optical elements ofthe second measurement device.
 1258. The method of claim 1234, whereinthe measurement device further comprises non-optical components, andwherein controlling the detection system to detect energy comprisescontrolling the non-optical components to measure a non-opticalcharacteristic of the surface of the specimen.
 1259. The method of claim1234, wherein the measurement device further comprises at least an eddycurrent device and a spectroscopic ellipsometer.
 1260. The method ofclaim 1234, wherein the measurement device further comprises at least aneddy current device and a spectroscopic ellipsometer, and wherein thesystem is coupled to an atomic layer deposition tool.
 1261. The methodof claim 1234, further comprising processing the one or more outputsignals to determine a third property of the specimen, wherein the thirdproperty is selected from the group consisting of a roughness of thespecimen, a roughness of a layer on the specimen, and a roughness of afeature of the specimen.
 1262. The method of claim 1261, wherein thestage and the measurement device are coupled to a process tool selectedfrom the group consisting of a lithography tool, an atomic layerdeposition tool, a cleaning tool, and an etch tool.
 1263. The method ofclaim 1234, wherein processing the one or more output signals todetermine the first and second properties of the specimen comprisessubstantially simultaneously determining the first and second propertiesof the specimen.
 1264. The method of claim 1234, further comprisingcontrolling the illumination system to direct energy toward multiplelocations on the surface of the specimen substantially simultaneouslyand controlling the detection system to detect energy propagating fromthe multiple locations substantially simultaneously such that one ormore of the at least two properties of the specimen can be determined atthe multiple locations substantially simultaneously.
 1265. The method ofclaim 1234, wherein the stage and the measurement device are coupled toa process tool.
 1266. The method of claim 1234, wherein the stage andthe measurement device are coupled to a process tool, and wherein thestage and the measurement device are arranged laterally proximate to theprocess tool.
 1267. The method of claim 1234, wherein the stage and themeasurement device are coupled to a process tool, and wherein the stageand the measurement device are disposed within the process tool. 1268.The method of claim 1234, wherein the stage and the measurement deviceare coupled to a process tool, and wherein the process tool is selectedfrom the group consisting of a lithography tool, an etch tool, and adeposition tool.
 1269. The method of claim 1234, wherein the stage andthe measurement device are coupled to a process tool, the method furthercomprising controlling a wafer handler to move the specimen from theprocess tool to the stage, and wherein the wafer handler is coupled tothe process tool.
 1270. The method of claim 1234, wherein the stage andthe measurement device are coupled to a process tool, the method furthercomprising controlling the stage to move the specimen from the system tothe process tool.
 1271. The method of claim 1234, wherein the stage andthe measurement device are coupled to a process tool, the method furthercomprising controlling a wafer handler to move the specimen from theprocess tool to the stage such that at least the two properties of thespecimen can be determined while the specimen is waiting between processsteps.
 1272. The method of claim 1234, wherein the stage and themeasurement device are coupled to a process tool, wherein the processtool comprises a support device configured to support the specimenduring a process step, and wherein an upper surface of the supportdevice is substantially parallel to an upper surface of the stage. 1273.The method of claim 1234, wherein the stage and the measurement deviceare coupled to a process tool, wherein the process tool comprises asupport device configured to support the specimen during a process step,and wherein an upper surface of the stage is angled with respect to anupper surface of the support device.
 1274. The method of claim 1234,wherein the stage and the measurement device are disposed within ameasurement chamber, and wherein the measurement chamber is coupled to aprocess tool.
 1275. The method of claim 1234, wherein the stage and themeasurement device are disposed within a measurement chamber, andwherein the measurement chamber is disposed within the process tool.1276. The method of claim 1234, wherein the stage and the measurementdevice are disposed within a measurement chamber, and wherein themeasurement chamber is arranged laterally proximate to a process chamberof the process tool.
 1277. The method of claim 1234, wherein the stageand the measurement device are disposed within a measurement chamber,and wherein the measurement chamber is arranged vertically proximate toa process chamber of the process tool.
 1278. The method of claim 1234,further comprising disposing the specimen upon a support device disposedwithin a process chamber of a process tool, and wherein the supportdevice is configured to support the specimen during a process step.1279. The method of claim 1278, further comprising controlling theillumination system and controlling the detection system during theprocess step.
 1280. The method of claim 1279, further comprisingcontrolling the system to obtain a signature characterizing the processstep, wherein the signature comprises at least one singularityrepresentative of an end of the process step.
 1281. The method of claim1279, further comprising controlling the system to alter a parameter ofone or more instruments coupled to the process tool in response to thedetermined properties using an in situ control technique.
 1282. Themethod of claim 1234, further comprising controlling the stage to movethe specimen from a first process chamber to a second process chamber,wherein the first process chamber and the second process chamber aredisposed within a process tool.
 1283. The method of claim 1282, furthercomprising controlling the illumination system and controlling thedetection system during said moving the specimen from the first processchamber to the second process chamber.
 1284. The method of claim 1234,further comprising comparing at least one of the determined propertiesof the specimen and determined properties of a plurality of specimens.1285. The method of claim 1234, further comprising comparing at leastone of the determined properties of the specimen to a predeterminedrange for the property.
 1286. The method of claim 1285, furthercomprising generating an output signal if at least one of the determinedproperties of the specimen is outside of the predetermined range for theproperty.
 1287. The method of claim 1234, further comprising altering asampling frequency of the measurement device in response to thedetermined first or second property of the specimen.
 1288. The method ofclaim 1234, further comprising altering a parameter of one or moreinstruments coupled to the measurement device in response to thedetermined first or second property using a feedback control technique.1289. The method of claim 1234, further comprising altering a parameterof one or more instruments coupled to the measurement device in responseto the determined first or second property using a feedforward controltechnique.
 1290. The method of claim 1234, further comprising generatinga database, wherein the database comprises the determined first andsecond properties of the specimen.
 1291. The method of claim 1290,further comprising calibrating the measurement device using thedatabase.
 1292. The method of claim 1290, further comprising monitoringoutput signals of the measurement device using the database.
 1293. Themethod of claim 1290, wherein the database further comprises first andsecond properties of a plurality of specimens.
 1294. The method of claim1293, wherein the first and second properties of the plurality ofspecimens are generated using a plurality of measurement devices. 1295.The method of claim 1294, further comprising calibrating the pluralityof measurement devices using the database.
 1296. The method of claim1294, further comprising monitoring output signals of the plurality ofmeasurement devices using the database.
 1297. The method of claim 1234,wherein a stand alone system is coupled to the system, the methodfurther comprising controlling the stand alone system to calibrate thestand alone system with a calibration standard and further controllingthe stand alone system to calibrate the system.
 1298. The method ofclaim 1234, wherein a stand alone system is coupled to the system and atleast one additional system, the method further comprising controllingthe stand alone system to calibrate the stand alone system with acalibration standard and further controlling the stand alone system tocalibrate the system and at least the one additional system.
 1299. Themethod of claim 1234, wherein the system is further configured todetermine at least the two properties of the specimen at more than oneposition on the specimen, and wherein the specimen comprises a wafer,the method further comprising altering at least one parameter of one ormore instruments coupled to a process tool in response to at least oneof the determined properties of the specimen at the more than oneposition on the specimen to reduce within wafer variation of at leastone of the determined properties.
 1300. The method of claim 1234,further comprising altering a parameter of one or more instrumentscoupled to a process tool in response to the determined first or secondproperty of the specimen using a feedback control technique.
 1301. Themethod of claim 1234, further comprising altering a parameter of one ormore instruments coupled to a process tool in response to the determinedfirst or second property of the specimen using a feedforward controltechnique.
 1302. The method of claim 1234, further comprising monitoringa parameter of one or more instruments coupled to the process tool.1303. The method of claim 1302, further comprising determining arelationship between the determined properties and the monitoredparameters.
 1304. The method of claim 1303, further comprising alteringa parameter of at least one of the instruments in response to therelationship.
 1305. The method of claim 1234, further comprisingaltering a parameter of one or more instruments coupled to a pluralityof process tools in response to the determined first or second propertyof the specimen.
 1306. The method of claim 1234, wherein processing theone or more output signals comprises: at least partially processing theone or more output signals using a local processor, wherein the localprocessor is coupled to the measurement device; sending the partiallyprocessed one or more output signals from the local processor to aremote controller computer; and further processing the partiallyprocessed one or more output signals using the remote controllercomputer.
 1307. The method of claim 1306, wherein at least partiallyprocessing the one or more output signals comprises determining thefirst and second properties of the specimen.
 1308. The method of claim1306, wherein further processing the partially processed one or moreoutput signals comprises determining the first and second properties ofthe specimen.
 1309. A semiconductor device fabricated by a method, themethod comprising: forming a portion of the semiconductor device upon aspecimen; disposing the specimen upon a stage, wherein the stage iscoupled to a measurement device, and wherein the measurement devicecomprises an illumination system and a detection system; directingenergy toward a surface of the specimen using the illumination system;detecting energy propagating from the surface of the specimen using thedetection system; generating one or more output signals in response tothe detected energy; and processing the one or more output signals todetermine a first property and a second property of the specimen,wherein the first property comprises a critical dimension of thespecimen, and wherein the second property comprises a thin filmcharacteristic of the specimen.
 1310. The device of claim 1309, whereinthe illumination system comprises a single energy source.
 1311. Thedevice of claim 1309, wherein the illumination system comprises morethan one energy source.
 1312. The device of claim 1309, wherein thedetection system comprises a single energy sensitive device.
 1313. Thedevice of claim 1309, wherein the detection system comprises more thanone energy sensitive devices.
 1314. The device of claim 1309, whereinthe measurement device is selected from the group consisting of anon-imaging scatterometer, a scatterometer, a spectroscopicscatterometer, a reflectometer, a spectroscopic reflectometer, acoherence probe microscope, a bright field imaging device, a dark fieldimaging device, a bright field and dark field imaging device, anellipsometer, a spectroscopic ellipsometer, a dual beamspectrophotometer, a beam profile ellipsometer, a photo-acoustic device,and a grazing X-ray reflectometer.
 1315. The device of claim 1309,wherein the measurement device comprises at least a first measurementdevice and a second measurement device, and wherein the first and secondmeasurement devices are selected from the group consisting of anon-imaging scatterometer, a scatterometer, a spectroscopicscatterometer, a reflectometer, a spectroscopic reflectometer, acoherence probe microscope, a bright field imaging device, a dark fieldimaging device, a bright field and dark field imaging device, anellipsometer, a spectroscopic ellipsometer, a dual beamspectrophotometer, a beam profile ellipsometer, a photo-acoustic device,and a grazing X-ray reflectometer.
 1316. The device of claim 1309,wherein the measurement device comprises at least a first measurementdevice and a second measurement device, and wherein optical elements ofthe first measurement device comprise optical elements of the secondmeasurement device.
 1317. The device of claim 1309, wherein themeasurement device further comprises non-optical components, and whereindetecting energy comprises measuring a nonoptical characteristic of thesurface of the specimen.
 1318. The device of claim 1309, wherein themeasurement device further comprises at least an eddy current device anda spectroscopic ellipsometer.
 1319. The device of claim 1309, whereinthe measurement device further comprises at least an eddy current deviceand a spectroscopic ellipsometer, and wherein the measurement device isfurther coupled to an atomic layer deposition tool.
 1320. The device ofclaim 1309, further comprising processing the one or more output signalsto determine a third property of the specimen, wherein the thirdproperty is selected from the group consisting of a roughness of thespecimen, a roughness of a layer on the specimen, and a roughness of afeature of the specimen.
 1321. The device of claim 1320, wherein thestage and the measurement device are coupled to a process tool selectedfrom the group consisting of a lithography tool, an atomic layerdeposition tool, a cleaning tool, and an etch tool.
 1322. The device ofclaim 1309, wherein the stage and the measurement device are coupled toa process tool.
 1323. The device of claim 1309, wherein the stage andthe measurement device are coupled to a process tool, and wherein theprocess tool is selected from the group consisting of a lithographytool, an etch tool, and a deposition tool.
 1324. A method forfabricating a semiconductor device, comprising: forming a portion of thesemiconductor device upon a specimen; disposing the specimen upon astage, wherein the stage is coupled to a measurement device, and whereinthe measurement device comprises an illumination system and a detectionsystem; directing energy toward a surface of the specimen using theillumination system; detecting energy propagating from the surface ofthe specimen using the detection system; generating one or more outputsignals in response to the detected energy; and processing the one ormore output signals to determine a first property and a second propertyof the specimen, wherein the first property comprises a criticaldimension of the specimen, and wherein the second property comprises athin film characteristic of the specimen.
 1325. The method of claim1324, wherein the illumination system comprises a single energy source.1326. The method of claim 1324, wherein the illumination systemcomprises more than one energy source.
 1327. The method of claim 1324,wherein the detection system comprises a single energy sensitive device.1328. The method of claim 1324, wherein the detection system comprisesmore than one energy sensitive devices.
 1329. The method of claim 1324,wherein the measurement device is selected from the group consisting ofa non-imaging scatterometer, a scatterometer, a spectroscopicscatterometer, a reflectometer, a spectroscopic reflectometer, acoherence probe microscope, a bright field imaging device, a dark fieldimaging device, a bright field and dark field imaging device, anellipsometer, a spectroscopic ellipsometer, a dual beamspectrophotometer, a beam profile ellipsometer, a photo-acoustic device,and a grazing X-ray reflectometer.
 1330. The method of claim 1324,wherein the measurement device further comprises at least a firstmeasurement device and a second measurement device, and wherein thefirst and second measurement devices are selected from the groupconsisting of a non-imaging scatterometer, a scatterometer, aspectroscopic scatterometer, a reflectometer, a spectroscopicreflectometer, a coherence probe microscope, a bright field imagingdevice, a dark field imaging device, a bright field and dark fieldimaging device, an ellipsometer, a spectroscopic ellipsometer, a dualbeam spectrophotometer, a beam profile ellipsometer, a photo-acousticdevice, and a grazing X-ray reflectometer.
 1331. The method of claim1324, wherein the measurement device further comprises at least a firstmeasurement device and a second measurement device, and wherein opticalelements of the first measurement device comprise optical elements ofthe second measurement device.
 1332. The method of claim 1324, whereinthe measurement device further comprises non-optical components, andwherein measuring a non-optical characteristic of the surface of thespecimen.
 1333. The method of claim 1324, wherein the measurement devicefurther comprises at least an eddy current device and a spectroscopicellipsometer.
 1334. The method of claim 1324, wherein the measurementdevice further comprises at least an eddy current device and aspectroscopic ellipsometer, and wherein the measurement device isfurther coupled to an atomic layer deposition tool.
 1335. The method ofclaim 1324, further comprising processing the one or more output signalsto determine a third property of the specimen, wherein the thirdproperty is selected from the group consisting of a roughness of thespecimen, a roughness of a layer on the specimen, and a roughness of afeature of the specimen.
 1336. The method of claim 1335, wherein thestage and the measurement device are coupled to a process tool selectedfrom the group consisting of a lithography tool, an atomic layerdeposition tool, a cleaning tool, and an etch tool.
 1337. The method ofclaim 1324, wherein the stage and the measurement device are coupled toa process tool.
 1338. The method of claim 1324, wherein the stage andthe measurement device are coupled to a process tool, and wherein theprocess tool is selected from the group consisting of a lithographytool, an etch tool, and a deposition tool.
 1339. A system configured todetermine at least two properties of a specimen during use, comprising:a stage configured to support the specimen during use; a measurementdevice coupled to the stage, comprising: an illumination systemconfigured to direct energy toward a surface of the specimen during use;and a detection system coupled to the illumination system and configuredto detect energy propagating from the surface of the specimen duringuse, wherein the measurement device is configured to generate one ormore output signals responsive to the detected energy; a local processorcoupled to the measurement device and configured to at least partiallyprocess the one or more output signals during use; and a remotecontroller computer coupled to the local processor, wherein the remotecontroller computer is configured to receive the at least partiallyprocessed one or more output signals and to determine a first propertyand a second property of the specimen from the at least partiallyprocessed one or more output signals during use, wherein the firstproperty comprises a critical dimension of the specimen, and wherein thesecond property comprises a thin film characteristic of the specimen.1340. The system of claim 1339, wherein the measurement device isselected from the group consisting of a non-imaging scatterometer, ascatterometer, a spectroscopic scatterometer, a reflectometer, aspectroscopic reflectometer, a coherence probe microscope, a brightfield imaging device, a dark field imaging device, a bright field anddark field imaging device, an ellipsometer, a spectroscopicellipsometer, a dual beam spectrophotometer, a beam profileellipsometer, a photo-acoustic device, and a grazing X-rayreflectometer.
 1341. The system of claim 1339, wherein the measurementdevice comprises at least a first measurement device and a secondmeasurement device, and wherein the first and second measurement devicesare selected from the group consisting of a non-imaging scatterometer, ascatterometer, a spectroscopic scatterometer, a reflectometer, aspectroscopic reflectometer, a coherence probe microscope, a brightfield imaging device, a dark field imaging device, a bright field anddark field imaging device, an ellipsometer, a spectroscopicellipsometer, a dual beam spectrophotometer, a beam profileellipsometer, a photo-acoustic device, and a grazing X-rayreflectometer.
 1342. The system of claim 1339, wherein the measurementdevice comprises at least a first measurement device and a secondmeasurement device, and wherein optical elements of the firstmeasurement device comprise optical elements of the second measurementdevice.
 1343. The system of claim 1339, wherein the illumination systemand the detection system comprise non-optical components, and whereinthe detected energy is responsive to a non-optical characteristic of thesurface of the specimen.
 1344. The system of claim 1339, wherein themeasurement device further comprises at least an eddy current device anda spectroscopic ellipsometer.
 1345. The system of claim 1339, whereinthe measurement device further comprises at least an eddy current deviceand a spectroscopic ellipsometer, and wherein the system is coupled toan atomic layer deposition tool.
 1346. The system of claim 1339, whereinthe remote controller computer is further configured to determine athird property of the specimen from the at least partially processed oneor more output signals during use, and wherein the third property isselected from the group consisting of a roughness of the specimen, aroughness of a layer on the specimen, and a roughness of a feature ofthe specimen.
 1347. The system of claim 1339, wherein the system iscoupled to a process tool selected from the group consisting of alithography tool, an atomic layer deposition tool, a cleaning tool, andan etch tool.
 1348. The system of claim 1339, wherein the remotecontroller computer is coupled to a process tool.
 1349. The system ofclaim 1339, wherein the remote controller computer is coupled to aprocess tool, and wherein the process tool is selected from a groupconsisting of a lithography tool, an etch tool, and a deposition tool.1350. The system of claim 1339, wherein the remote controller computeris coupled to a process tool, and wherein the remote controller computeris further configured to alter a parameter of one or more instrumentscoupled to the process tool in response to the determined first orsecond property using a feedback control technique during use.
 1351. Thesystem of claim 1339, wherein the remote controller computer is coupledto a process tool, and wherein the remote controller computer is furtherconfigured to alter a parameter of one or more instruments coupled tothe process tool in response to the determined first or second propertyusing a feedforward control technique during use.
 1352. The system ofclaim 1339, wherein the remote controller computer is coupled to aprocess tool, and wherein the remote controller computer is furtherconfigured to monitor a parameter of one or more instruments coupled tothe process tool during use.
 1353. The system of claim 1352, wherein theremote controller computer is further configured to determine arelationship between the determined properties and the monitoredparameters during use.
 1354. The system of claim 1353, wherein theremote controller computer is further configured to alter a parameter ofat least one of the instruments in response to the relationship duringuse.
 1355. The system of claim 1339, wherein the system is coupled to aprocess tool, wherein the illumination system is further configured todirect energy toward the surface of the specimen during a process step,wherein the detection system is further configured to detect energypropagating from the surface of the specimen during the process step,and wherein the remote controller computer is further configured todetermine the first and second properties of the specimen during theprocess step.
 1356. The system of claim 1355, wherein the remotecontroller computer is further configured to obtain a signaturecharacterizing the process step during use, and wherein the signaturecomprises at least one singularity representative of an end of theprocess step.
 1357. The system of claim 1355, wherein the remotecontroller computer is further configured to alter a parameter of one ormore instruments coupled to the process tool in response to thedetermined first or second property using an in situ control techniqueduring use.
 1358. The system of claim 1339, wherein a process toolcomprises a first process chamber and a second process chamber, andwherein the stage is further configured to move the specimen from thefirst process chamber to the second process chamber during use. 1359.The system of claim 1358, wherein the illumination system is furtherconfigured to direct energy toward the surface of the specimen duringsaid moving, wherein the detection system is further configured todetect energy propagating from the surface of the specimen during saidmoving, and wherein the remote controller computer is further configuredto determine the first and second properties of the specimen during saidmoving.
 1360. The system of claim 1339, wherein the remote controllercomputer is further configured to compare at least one of the determinedproperties of the specimen and properties of a plurality of specimensduring use.
 1361. The system of claim 1339, wherein the remotecontroller computer is further configured to compare at least one of thedetermined properties of the specimen to a predetermined range for theproperty during use.
 1362. The system of claim 1361, wherein the remotecontroller computer is further configured to generate an output signalif at least one of the determined properties of the specimen is outsideof the predetermined range for the property during use.
 1363. The systemof claim 1339, wherein the remote controller computer is furtherconfigured to alter a sampling frequency of the measurement device inresponse to the determined first or second property of the specimenduring use.
 1364. The system of claim 1339, wherein the remotecontroller computer is further configured to alter a parameter of one ormore instruments coupled to the measurement device in response to thedetermined first or second property using a feedback control techniqueduring use.
 1365. The system of claim 1339, wherein the remotecontroller computer is further configured to alter a parameter of one ormore instruments coupled to the measurement device in response to thedetermined first or second property using a feedforward controltechnique during use.
 1366. The system of claim 1339, wherein the remotecontroller computer is further configured to generate a database duringuse, wherein the database comprises the determined first and secondproperties of the specimen.
 1367. The system of claim 1366, wherein theremote controller computer is further configured to calibrate themeasurement device using the database during use.
 1368. The system ofclaim 1366, wherein the remote controller computer is further configuredto monitor output signals generated by measurement device using thedatabase during use.
 1369. The system of claim 1366, wherein thedatabase further comprises first and second properties of a plurality ofspecimens.
 1370. The system of claim 1369, wherein the first and secondproperties of the plurality of specimens are determined using aplurality of measurement devices.
 1371. The system of claim 1370,wherein the remote controller computer is further coupled to theplurality of measurement devices.
 1372. The system of claim 1371,wherein the remote controller computer is further configured tocalibrate the plurality of measurement devices using the database duringuse.
 1373. The system of claim 1371, wherein the remote controllercomputer is further configured to monitor output signals generated bythe plurality of measurement devices using the database during use.1374. The system of claim 1339, wherein the remote controller computeris further coupled to a plurality of measurement devices, and whereineach of the plurality of measurement devices is coupled to at least oneof a plurality of process tools.
 1375. A method for determining at leasttwo properties of a specimen, comprising: disposing the specimen upon astage, wherein the stage is coupled to a measurement device, and whereinthe measurement device comprises an illumination system and a detectionsystem; directing energy toward a surface of the specimen using theillumination system; detecting energy propagating from the surface ofthe specimen using the detection system; generating one or more outputsignals responsive to the detected energy; and processing the one ormore output signals to determine a first property and a second propertyof the specimen, wherein the first property comprises a criticaldimension of the specimen, and wherein the second property comprises athin film characteristic of the specimen, comprising: at least partiallyprocessing the one or more output signals using a local processor,wherein the local processor is coupled to the measurement device;sending the partially processed one or more output signals from thelocal processor to a remote controller computer; and further processingthe partially processed one or more output signals using the remotecontroller computer.
 1376. The method of claim 1375, wherein themeasurement device is selected from the group consisting of anon-imaging scatterometer, a scatterometer, a spectroscopicscatterometer, a reflectometer, a spectroscopic reflectometer, acoherence probe microscope, a bright field imaging device, a dark fieldimaging device, a bright field and dark field imaging device, anellipsometer, a spectroscopic ellipsometer, a dual beamspectrophotometer, a beam profile ellipsometer, a photo-acoustic device,and a grazing X-ray reflectometer.
 1377. The method of claim 1375,wherein the measurement device comprises at least a first measurementdevice and a second measurement device, and wherein the first and secondmeasurement devices are selected from the group consisting of anon-imaging scatterometer, a scatterometer, a spectroscopicscatterometer, a reflectometer, a spectroscopic reflectometer, acoherence probe microscope, a bright field imaging device, a dark fieldimaging device, a bright field and dark field imaging device, anellipsometer, a spectroscopic ellipsometer, a dual beamspectrophotometer, a beam profile ellipsometer, a photo-acoustic device,and a grazing X-ray reflectometer.
 1378. The method of claim 1375,wherein optical elements of the first measurement device compriseoptical elements of the second measurement device.
 1379. The method ofclaim 1375, wherein the measurement device further comprises non-opticalcomponents, and wherein detecting energy comprises measuring anonoptical characteristic of the surface of the specimen.
 1380. Themethod of claim 1375, wherein the measurement device further comprisesat least an eddy current device and a spectroscopic ellipsometer. 1381.The method of claim 1375, wherein the measurement device furthercomprises at least an eddy current device and a spectroscopicellipsometer, and wherein the measurement device is further coupled toan atomic layer deposition tool.
 1382. The method of claim 1375, furthercomprising processing the one or more output signals to determine athird property of the specimen, wherein the third property is selectedfrom the group consisting of a roughness of the specimen, a roughness ofa layer on the specimen, and a roughness of a feature of the specimen.1383. The method of claim 1382, wherein the stage and the measurementdevice are coupled to a process tool selected from the group consistingof a lithography tool, an atomic layer deposition tool, a cleaning tool,and an etch tool.
 1384. The method of claim 1375, wherein the remotecontroller computer is coupled to a process tool.
 1385. The method ofclaim 1375, wherein the remote controller computer is coupled to aprocess tool, and wherein the process tool is selected from the groupconsisting of a lithography tool, an etch tool, and a deposition tool.1386. The method of claim 1375, wherein the remote controller computeris coupled to a process tool, the method further comprising altering aparameter of one or more instruments coupled to the process tool usingthe remote controller computer in response to the determined first orsecond property of the specimen using a feedback control technique.1387. The method of claim 1375, wherein the remote controller computeris coupled to a process tool, the method further comprising altering aparameter of one or more instruments coupled to the process tool usingthe remote controller computer in response to the determined first orsecond property of the specimen using a feedforward control technique.1388. The method of claim 1375, wherein the remote controller computeris coupled to a process tool, the method further comprising monitoring aparameter of one or more instruments coupled to the process tool usingthe remote controller computer.
 1389. The method of claim 1388, furthercomprising determining a relationship between the determined propertiesand at least one of the monitored parameters using the remote controllercomputer.
 1390. The method of claim 1375, further comprising altering aparameter of at least one of the instruments in response to therelationship using the remote controller computer.
 1391. The method ofclaim 1375, wherein the illumination system and the detection system arecoupled to a process chamber of the process tool, further comprisingperforming said directing and said detecting during a process step.1392. The method of claim 1391, further comprising obtaining a signaturecharacterizing the process step using the remote controller computer,wherein the signature comprises at least one singularity representativeof an end of the process step.
 1393. The method of claim 1391, furthercomprising altering a parameter of one or more instruments coupled tothe process tool using the remote controller computer in response to thedetermined first or second property using an in situ control technique.1394. The method of claim 1375, further comprising: moving the specimenfrom a first process chamber to a second process chamber using thestage; performing said directing and said detecting during said movingthe specimen.
 1395. The method of claim 1375, further comprisingcomparing at least one of the determined properties of the specimen anddetermined properties of a plurality of specimens using the remotecontroller computer.
 1396. The method of claim 1375, further comprisingcomparing at least one of the determined properties of the specimen to apredetermined range for the property using the remote controllercomputer.
 1397. The method of claim 1396, further comprising generatingan output signal using the remote controller computer if at least one ofthe determined properties of the specimen is outside of thepredetermined range for the property.
 1398. The method of claim 1375,wherein the remote controller computer is coupled to the measurementdevice.
 1399. The method of claim 1398, further comprising altering asampling frequency of the measurement device using the remote controllercomputer in response to the determined first or second property of thespecimen.
 1400. The method of claim 1398, further comprising altering aparameter of one or more instruments coupled to the measurement deviceusing the remote controller computer in response to the determined firstor second property using a feedback control technique.
 1401. The methodof claim 1398, further comprising altering a parameter of one or moreinstruments coupled to the measurement device using the remotecontroller computer in response to the determined first or secondproperty using a feedforward control technique.
 1402. The method ofclaim 1375, further comprising generating a database using the remotecontroller computer, wherein the database comprises the determined firstand second properties of the specimen.
 1403. The method of claim 1402,further comprising calibrating the measurement device using the databaseand the remote controller computer.
 1404. The method of claim 1402,further comprising monitoring output signals generating by themeasurement device using the database and the remote controllercomputer.
 1405. The method of claim 1402, wherein the database furthercomprises first and second properties of a plurality of specimens. 1406.The method of claim 1405, wherein the first and second properties of theplurality of specimens are generated using a plurality of measurementdevices.
 1407. The method of claim 1406, further comprising calibratingthe plurality of measurement devices using the database and the remotecontroller computer.
 1408. The method of claim 1406, further comprisingmonitoring output signals generated by the plurality of measurementdevices using the database and the remote controller computer.
 1409. Themethod of claim 1375, further comprising sending the at least partiallyprocessed one or more output signals from a plurality of localprocessors to the remote controller computer, wherein each of theplurality of local processors is coupled to one of a plurality ofmeasurement devices.
 1410. The method of claim 1409, further comprisingaltering a parameter of one or more instruments coupled to at least oneof the plurality of measurement devices using the remote controllercomputer in response to the determined first or second property of thespecimen.
 1411. The method of claim 1410, wherein each of the pluralityof measurement devices is coupled to one of a plurality of processtools.
 1412. The method of claim 1411, further comprising altering aparameter of one or more instruments coupled to at least one of theplurality of process tools using the remote controller computer inresponse to the determined first or second property of the specimen.1413. A system configured to determine at least three properties of aspecimen during use, comprising: a stage configured to support thespecimen during use; a measurement device coupled to the stage,comprising: an illumination system configured to direct energy toward asurface of the specimen during use; and a detection system coupled tothe illumination system and configured to detect energy propagating fromthe surface of the specimen during use, wherein the measurement deviceis configured to generate one or more output signals in response to thedetected energy during use; and a processor coupled to the measurementdevice and configured to determine a first property, a second property,and a third property of the specimen from the one or more output signalsduring use, wherein the first property comprises a critical dimension ofthe specimen, wherein the second property comprises a presence ofdefects on the specimen, and wherein the third property comprises a thinfilm characteristic of the specimen.
 1414. The system of claim 1413,wherein the stage is further configured to move laterally during use.1415. The system of claim 1413, wherein the stage is further configuredto move rotatably during use.
 1416. The system of claim 1413, whereinthe stage is further configured to move laterally and rotatably duringuse.
 1417. The system of claim 1413, wherein the illumination systemcomprises a single energy source.
 1418. The system of claim 1413,wherein the illumination system comprises more than one energy source.1419. The system of claim 1413, wherein the detection system comprises asingle energy sensitive device.
 1420. The system of claim 1413, whereinthe detection system comprises more than one energy sensitive devices.1421. The system of claim 1413, wherein the measurement device furthercomprises a non-imaging scatterometer.
 1422. The system of claim 1413,wherein the measurement device further comprises a scatterometer. 1423.The system of claim 1413, wherein the measurement device furthercomprises a spectroscopic scatterometer.
 1424. The system of claim 1413,wherein the measurement device further comprises a reflectometer. 1425.The system of claim 1413, wherein the measurement device furthercomprises a spectroscopic reflectometer.
 1426. The system of claim 1413,wherein the measurement device further comprises a coherence probemicroscope.
 1427. The system of claim 1413, wherein the measurementdevice further comprises a bright field imaging device.
 1428. The systemof claim 1413, wherein the measurement device further comprises a darkfield imaging device.
 1429. The system of claim 1413, wherein themeasurement device further comprises a bright field and dark fieldimaging device.
 1430. The system of claim 1413, wherein the measurementdevice further comprises a non-imaging bright field device.
 1431. Thesystem of claim 1413, wherein the measurement device further comprises anon-imaging dark field device.
 1432. The system of claim 1413, whereinthe measurement device further comprises a non-imaging bright field anddark field device.
 1433. The system of claim 1413, wherein themeasurement device further comprises an ellipsometer.
 1434. The systemof claim 1413, wherein the measurement device further comprises aspectroscopic ellipsometer.
 1435. The system of claim 1413, wherein themeasurement device further comprises a dual beam spectrophotometer.1436. The system of claim 1413, wherein the measurement device furthercomprises a beam profile ellipsometer.
 1437. The system of claim 1413,wherein the measurement device further comprises at least a firstmeasurement device and a second measurement device, and wherein thefirst and second measurement devices are selected from the groupconsisting of a non-imaging scatterometer, a scatterometer, aspectroscopic scatterometer, a reflectometer, a spectroscopicreflectometer, a coherence probe microscope, a bright field imagingdevice, a dark field imaging device, a bright field and dark fieldimaging device, a non-imaging bright field device, a non-imaging darkfield device, a non-imaging bright field and dark field device, anellipsometer, a spectroscopic ellipsometer, a dual beamspectrophotometer, and a beam profile ellipsometer.
 1438. The system ofclaim 1413, wherein the measurement device further comprises at least afirst measurement device and a second measurement device, and whereinoptical elements of the first measurement device comprise opticalelements of the second measurement device.
 1439. The system of claim1413, wherein the defects comprise micro defects and macro defects.1440. The system of claim 1413, wherein the defects comprises microdefects or macro defects.
 1441. The system of claim 1413, wherein thethin film characteristic comprises a thickness of a copper film, andwherein the defects comprise voids in the copper film.
 1442. The systemof claim 1413, wherein the defects comprise macro defects on a back sideof the specimen, and wherein the macro defects comprise coppercontamination.
 1443. The system of claim 1413, wherein the processor isfurther configured to determine a fourth property of the specimen fromthe one or more output signals during use, and wherein the fourthproperty is selected from the group consisting of a roughness of thespecimen, a roughness of a layer on the specimen, and a roughness of afeature of the specimen.
 1444. The system of claim 1443, wherein thesystem is coupled to a process tool selected from the group consistingof a lithography tool, an atomic layer deposition tool, a cleaning tool,and an etch tool.
 1445. The system of claim 1413, wherein theillumination system is further configured to direct energy toward abottom surface of the specimen during use, wherein the detection systemis further configured to detect energy propagating from the bottomsurface of the specimen during use, and wherein the second propertyfurther comprises a presence of defects on the bottom surface of thespecimen.
 1446. The system of claim 1445, wherein the defects comprisemacro defects.
 1447. The system of claim 1413, wherein the illuminationsystem and the detection system comprise non-optical components, andwherein the detected energy is responsive to a non-opticalcharacteristic of the surface of the specimen.
 1448. The system of claim1413, wherein the measurement device further comprises at least an eddycurrent device and a spectroscopic ellipsometer.
 1449. The system ofclaim 1413, wherein the measurement device further comprises at least aneddy current device and a spectroscopic ellipsometer, and wherein thesystem is coupled to an atomic layer deposition tool.
 1450. The systemof claim 1413, wherein the system is further configured to determine atleast three properties of the specimen substantially simultaneouslyduring use.
 1451. The system of claim 1413, wherein the illuminationsystem is further configured to direct energy to multiple locations onthe surface of the specimen substantially simultaneously, and whereinthe detection system is further configured to detect energy propagatingfrom the multiple locations on the surface of the specimen substantiallysimultaneously such that the first, second, and third properties of thespecimen at the multiple locations can be determined substantiallysimultaneously.
 1452. The system of claim 1413, wherein the system iscoupled to a process tool.
 1453. The system of claim 1413, wherein thesystem is coupled to a process tool, and wherein the system is disposedwithin the process tool.
 1454. The system of claim 1413, wherein thesystem is coupled to a process tool, and wherein the system is arrangedlaterally proximate to the process tool.
 1455. The system of claim 1413,wherein the system is coupled to a process tool, and wherein the processtool comprises a wafer handler configured to move the specimen to thestage during use.
 1456. The system of claim 1413, wherein the system iscoupled to a process tool, and wherein the stage is configured to movethe specimen from the system to the process tool during use.
 1457. Thesystem of claim 1413, wherein the system is coupled to a process tool,and wherein the stage is further configured to move the specimen to aprocess chamber of the process tool during use.
 1458. The system ofclaim 1413, wherein the system is coupled to a process tool, and whereinthe system is further configured to determine at least the twoproperties of the specimen while the specimen is waiting between processsteps.
 1459. The system of claim 1413, wherein the system is coupled toa process tool, and wherein the process tool comprises a support deviceconfigured to support the specimen during a process step, and wherein anupper surface of the support device is substantially parallel to anupper surface of the stage.
 1460. The system of claim 1413, wherein thesystem is coupled to a process tool, wherein the process tool comprisesa support device configured to support the specimen during a processstep, and wherein an upper surface of the stage is angled with respectto an upper surface of the support device.
 1461. The system of claim1413, wherein the system is coupled to a process tool, and wherein theprocess tool is selected from the group consisting of a lithographytool, an etch tool, and a deposition tool.
 1462. The system of claim1413, wherein the system further comprises a measurement chamber,wherein the stage and the measurement device are disposed within themeasurement chamber, and wherein the measurement chamber is coupled to aprocess tool.
 1463. The system of claim 1413, wherein the system furthercomprises a measurement chamber, wherein the stage and the measurementdevice are disposed within the measurement chamber, and wherein themeasurement chamber is disposed within a process tool.
 1464. The systemof claim 1413, wherein the system further comprises a measurementchamber, wherein the stage and the measurement device are disposedwithin the measurement chamber, and wherein the measurement chamber isarranged laterally proximate to a process chamber of a process tool.1465. The system of claim 1413, wherein the system further comprises ameasurement chamber, wherein the stage and the measurement device aredisposed within the measurement chamber, and wherein the measurementchamber is arranged vertically proximate to a process chamber of aprocess tool.
 1466. The system of claim 1413, wherein a process toolcomprises a process chamber, wherein the stage is disposed within theprocess chamber, and wherein the stage is further configured to supportthe specimen during a process step.
 1467. The system of claim 1466,wherein the processor is further configured to determine at least thethree properties of the specimen during the process step.
 1468. Thesystem of claim 1467, wherein the processor is further configured toobtain a signature characterizing the process step during use, andwherein the signature comprises at least one singularity representativeof an end of the process step.
 1469. The system of claim 1467, whereinthe processor is coupled to the process tool and is further configuredto alter a parameter of one or more instruments coupled to the processtool in response to the determined properties using an in situ controltechnique during use.
 1470. The system of claim 1413, wherein a processtool comprises a first process chamber and a second process chamber, andwherein the stage is further configured to move the specimen from thefirst process chamber to the second process chamber during use. 1471.The system of claim 1470, wherein the system is further configured todetermine at least the three properties of the specimen as the stage ismoving the specimen from the first process chamber to the second processchamber.
 1472. The system of claim 1413, wherein the processor isfurther configured to compare at least one of the determined propertiesof the specimen and properties of a plurality of specimens during use.1473. The system of claim 1413, wherein the processor is furtherconfigured to compare at least one of the determined properties of thespecimen to a predetermined range for the property during use.
 1474. Thesystem of claim 1473, wherein the processor is further configured togenerate an output signal if at least one of the determined propertiesof the specimen is outside of the predetermined range for the propertyduring use.
 1475. The system of claim 1413, wherein the processor isfurther configured to alter a sampling frequency of the measurementdevice in response to at least one of the determined properties of thespecimen during use.
 1476. The system of claim 1413, wherein theprocessor is further configured to alter a parameter of one or moreinstruments coupled to the measurement device in response to at leastone of the determined properties using a feedback control techniqueduring use.
 1477. The system of claim 1413, wherein the processor isfurther configured to alter a parameter of one or more instrumentscoupled to the measurement device in response to at least one of thedetermined properties using a feedforward control technique during use.1478. The system of claim 1413, wherein the processor is furtherconfigured to generate a database during use, wherein the databasecomprises the determined first, second, and third properties of thespecimen.
 1479. The system of claim 1478, wherein the processor isfurther configured to calibrate the measurement device using thedatabase during use.
 1480. The system of claim 1478, wherein theprocessor is further configured to monitor output signals generated bymeasurement device using the database during use.
 1481. The system ofclaim 1478, wherein the database further comprises first, second, andthird properties of a plurality of specimens.
 1482. The system of claim1481, wherein the first, second, and third properties of the pluralityof specimens are determined using the measurement device.
 1483. Thesystem of claim 1481, wherein the first, second, and third properties ofthe plurality of specimens are determined using a plurality ofmeasurement devices.
 1484. The system of claim 1483, wherein theprocessor is further coupled to the plurality of measurement devices.1485. The system of claim 1484, wherein the processor is furtherconfigured to calibrate the plurality of measurement devices using thedatabase during use.
 1486. The system of claim 1485, wherein theprocessor is further configured to monitor output signals generated bythe plurality of measurement devices using the database during use.1487. The system of claim 1413, further comprising a stand alone systemcoupled to the system, wherein the stand alone system is configured tobe calibrated with a calibration standard during use, and wherein thestand alone system is further configured to calibrate the system duringuse.
 1488. The system of claim 1413, further comprising a stand alonesystem coupled the system and at least one additional system, whereinthe stand alone system is configured to be calibrated with a calibrationstandard during use, and wherein the stand alone system is furtherconfigured to calibrate the system and at least the one additionalsystem during use.
 1489. The system of claim 1413, wherein the system isfurther configured to determine at least the two properties of thespecimen at more than one position on the specimen, wherein the specimencomprises a wafer, and wherein the processor is configured to alter atleast one parameter of one or more instruments coupled to a process toolin response to at least one of the determined properties of the specimenat the more than one position on the specimen to reduce within wafervariation of at least one of the determined properties.
 1490. The systemof claim 1413, wherein the processor is further coupled to a processtool.
 1491. The system of claim 1490, wherein the processor is furtherconfigured to alter a parameter of one or more instruments coupled tothe process tool in response to at least one of the determinedproperties using a feedback control technique during use.
 1492. Thesystem of claim 1490, wherein the processor is further configured toalter a parameter of one or more instruments coupled to the process toolin response to at least one of the determined properties using afeedforward control technique during use.
 1493. The system of claim1490, wherein the processor is further configured to monitor a parameterof one or more instruments coupled to the process tool during use. 1494.The system of claim 1493, wherein the processor is further configured todetermine a relationship between at least one of the determinedproperties and at least one of the monitored parameters during use.1495. The system of claim 1494, wherein the processor is furtherconfigured to alter a parameter of at least one of the instruments inresponse to the relationship during use.
 1496. The system of claim 1413,wherein the processor is further coupled to a plurality of measurementdevices, and wherein each of the plurality of measurement devices iscoupled to at least one of a plurality of process tools.
 1497. Thesystem of claim 1413, wherein the processor comprises a local processorcoupled to the measurement device and a remote controller computercoupled to the local processor, wherein the local processor isconfigured to at least partially process the one or more output signalsduring use, and wherein the remote controller computer is configured tofurther process the at least partially processed one or more outputsignals during use.
 1498. The system of claim 1497, wherein the localprocessor is further configured to determine the first, second, andthird properties of the specimen during use.
 1499. The system of claim1497, wherein the remote controller computer is further configured todetermine the first, second, and properties of the specimen during use.1500. A method for determining at least three properties of a specimen,comprising: disposing the specimen upon a stage, wherein the stage iscoupled to a measurement device, and wherein the measurement devicecomprises an illumination system and a detection system; directingenergy toward a surface of the specimen using the illumination system;detecting energy propagating from the surface of the specimen using thedetection system; generating one or more output signals responsive tothe detected energy; and processing the one or more output signals todetermine a first property, a second property, and a third property ofthe specimen, wherein the first property comprises a critical dimensionof the specimen, wherein the second property comprises a presence ofdefects on the specimen, and wherein the third property comprises a thinfilm characteristic of the specimen.
 1501. The method of claim 1500,further comprising laterally moving the stage during said directingenergy and said detecting energy.
 1502. The method of claim 1500,further comprising rotatably moving the stage during said directingenergy and said detecting energy.
 1503. The method of claim 1500,further comprising laterally and rotatably moving the stage during saiddirecting energy and said detecting energy.
 1504. The method of claim1500, wherein the illumination system comprises a single energy source.1505. The method of claim 1500, wherein the illumination systemcomprises more than one energy source.
 1506. The method of claim 1500,wherein the detection system comprises a single energy sensitive device.1507. The method of claim 1500, wherein the detection system comprisesmore than one energy sensitive devices.
 1508. The method of claim 1500,wherein the measurement device further comprises a non-imagingscatterometer.
 1509. The method of claim 1500, wherein the measurementdevice further comprises a scatterometer.
 1510. The method of claim 1500wherein the measurement device further comprises a spectroscopicscatterometer.
 1511. The method of claim 1500, wherein the measurementdevice further comprises a reflectometer.
 1512. The method of claim1500, wherein the measurement device further comprises a spectroscopicreflectometer.
 1513. The method of claim 1500, wherein the measurementdevice further comprises a coherence probe microscope.
 1514. The methodof claim 1500, wherein the measurement device further comprises a brightfield imaging device.
 1515. The method of claim 1500, wherein themeasurement device further comprises a dark field imaging device. 1516.The method of claim 1500, wherein the measurement device furthercomprises a bright field and dark field imaging device.
 1517. The methodof claim 1500, wherein the measurement device further comprises anon-imaging bright field device.
 1518. The method of claim 1500, whereinthe measurement device further comprises a non-imaging dark fielddevice.
 1519. The method of claim 1500, wherein the measurement devicefurther comprises a non-imaging bright field and dark field device.1520. The method of claim 1500, wherein the measurement device furthercomprises an ellipsometer.
 1521. The method of claim 1500, wherein themeasurement device further comprises a spectroscopic ellipsometer. 1522.The method of claim 1500, wherein the measurement device furthercomprises a dual beam spectrophotometer.
 1523. The method of claim 1500,wherein the measurement device further comprises a beam profileellipsometer.
 1524. The method of claim 1500, wherein the measurementdevice further comprises at least a first measurement device and asecond measurement device, and wherein the first and second measurementdevices are selected from the group consisting of a non-imagingscatterometer, a scatterometer, a spectroscopic scatterometer, areflectometer, a spectroscopic reflectometer, a coherence probemicroscope, a bright field imaging device, a dark field imaging device,a bright field and dark field imaging device, a non-imaging bright fielddevice, a non-imaging dark field device, a non-imaging bright field anddark field device, an ellipsometer, a spectroscopic ellipsometer, a dualbeam spectrophotometer, and a beam profile ellipsometer.
 1525. Themethod of claim 1500, wherein the measurement device further comprisesat least a first measurement device and a second measurement device, andwherein optical elements of the first measurement device compriseoptical elements of the second measurement device.
 1526. The method ofclaim 1500, wherein the defects comprise micro defects and macrodefects.
 1527. The method of claim 1500, wherein the defects comprisesmicro defects or macro defects.
 1528. The method of claim 1500, whereinthe thin film characteristic comprises a thickness of a copper film, andwherein the defects comprise voids in the copper film.
 1529. The methodof claim 1500, wherein the defects comprise macro defects on a back sideof the specimen, and wherein the macro defects comprise coppercontamination.
 1530. The method of claim 1500, further comprisingprocessing the one or more output signals to determine a fourth propertyof the specimen, wherein the fourth property is selected from the groupconsisting of a roughness of the specimen, a roughness of a layer on thespecimen, and a roughness of a feature of the specimen.
 1531. The methodof claim 1530, wherein the stage and the measurement device are coupledto a process tool selected from the group consisting of a lithographytool, an atomic layer deposition tool, a cleaning tool, and an etchtool.
 1532. The method of claim 1500, further comprising: directingenergy toward a bottom surface of the specimen; and detecting energypropagating from the bottom surface of the specimen, wherein the secondproperty comprises a presence of defects on the bottom surface of thespecimen.
 1533. The method of claim 1532, wherein the defects comprisemacro defects.
 1534. The method of claim 1500, wherein the measurementdevice further comprises non-optical components, and wherein detectingenergy comprises measuring a nonoptical characteristic of the surface ofthe specimen.
 1535. The method of claim 1500, wherein the measurementdevice further comprises at least an eddy current device and aspectroscopic ellipsometer.
 1536. The method of claim 1500, wherein themeasurement device further comprises at least an eddy current device anda spectroscopic ellipsometer, and wherein the measurement device isfurther coupled to an atomic layer deposition tool.
 1537. The method ofclaim 1500, wherein processing the detected energy to determine thefirst, second, and third properties of the specimen comprisessubstantially simultaneously determining the first, second, and thirdproperties of the specimen.
 1538. The method of claim 1500, furthercomprising directing energy toward multiple locations on the surface ofthe specimen substantially simultaneously and detecting energypropagating from the multiple locations substantially simultaneouslysuch that the first, second, and third properties of the specimen at themultiple locations can be determined substantially simultaneously. 1539.The method of claim 1500, wherein the stage and the measurement deviceare coupled to a process tool.
 1540. The method of claim 1500, whereinthe stage and the measurement device are coupled to a process tool, andwherein the stage and the measurement device are arranged laterallyproximate to the process tool.
 1541. The method of claim 1500, whereinthe stage and the measurement device are coupled to a process tool, andwherein the stage and the measurement device are disposed within theprocess tool.
 1542. The method of claim 1500, wherein the stage and themeasurement device are coupled to a process tool, and wherein theprocess tool is selected from the group consisting of a lithographytool, an etch tool, and a deposition tool.
 1543. The method of claim1500, wherein the stage and the measurement device are coupled to aprocess tool, wherein the process tool comprises a wafer handler, andwherein disposing the specimen upon the stage comprises moving thespecimen from the process tool to the stage using the wafer handler.1544. The method of claim 1500, wherein the stage and the measurementdevice are coupled to a process tool, the method further comprisingmoving the specimen to the process tool subsequent to said directing andsaid detecting using the stage.
 1545. The method of claim 1500, whereinthe stage and the measurement device are coupled to a process tool, themethod further comprising determining at least the two properties of thespecimen while the specimen is waiting between process steps.
 1546. Themethod of claim 1500, wherein the stage and the measurement device arecoupled to a process tool, wherein the process tool comprises a supportdevice configured to support the specimen during a process step, andwherein an upper surface of the support device is substantially parallelto an upper surface of the stage.
 1547. The method of claim 1500,wherein the stage and the measurement device are coupled to a processtool, wherein the process tool comprises a support device configured tosupport the specimen during a process step, and wherein an upper surfaceof the stage is angled with respect to an upper surface of the supportdevice.
 1548. The method of claim 1500, wherein the stage and themeasurement device are disposed within a measurement chamber, andwherein the measurement chamber is coupled to a process tool.
 1549. Themethod of claim 1500, wherein the stage and the measurement device aredisposed within a measurement chamber, and wherein the measurementchamber is disposed within a process tool.
 1550. The method of claim1500, wherein the stage and the measurement device are disposed within ameasurement chamber, and wherein the measurement chamber is arrangedlaterally proximate to a process chamber of a process tool.
 1551. Themethod of claim 1500, wherein the stage and the measurement device aredisposed within a measurement chamber, and wherein the measurementchamber is arranged vertically proximate to a process chamber of aprocess tool.
 1552. The method of claim 1500, wherein disposing thespecimen upon the stage comprises disposing the specimen upon a supportdevice disposed within a process chamber of a process tool, and whereinthe support device is configured to support the specimen during aprocess step.
 1553. The method of claim 1552, further comprisingperforming said directing and said detecting during the process step.1554. The method of claim 1553, further comprising obtaining a signaturecharacterizing the process step, wherein the signature comprises atleast one singularity representative of an end of the process step.1555. The method of claim 1553, further comprising altering a parameterof one or more instruments coupled to the process tool in response to atleast one of the determined properties using an in situ controltechnique.
 1556. The method of claim 1500, further comprising moving thespecimen from a first process chamber to a second process chamber usingthe stage, wherein the first process chamber and the second processchamber are disposed within a process tool.
 1557. The method of claim1556, further comprising performing said directing and said detectingduring said moving the specimen from the first process chamber to thesecond process chamber.
 1558. The method of claim 1500, furthercomprising comparing at least one of the determined properties of thespecimen and determined properties of a plurality of specimens. 1559.The method of claim 1500, further comprising comparing at least one ofthe determined properties of the specimen to a predetermined range forthe property.
 1560. The method of claim 1559, further comprisinggenerating an output signal if at least one of the determined propertiesof the specimen is outside of the predetermined range for the property.1561. The method of claim 1500, further comprising altering a samplingfrequency of the measurement device in response to at least one of thedetermined properties of the specimen.
 1562. The method of claim 1500,further comprising altering a parameter of an instrument coupled to themeasurement device in response to at least one of the determinedproperties using a feedback control technique.
 1563. The method of claim1500, further comprising altering a parameter of an instrument coupledto the measurement device in response to at least one of the determinedproperties using a feedforward control technique.
 1564. The method ofclaim 1500, further comprising generating a database, wherein thedatabase comprises the determined first, second, and third properties ofthe specimen.
 1565. The method of claim 1564, further comprisingcalibrating the measurement device using the database.
 1566. The methodof claim 1564, further comprising monitoring output signals of themeasurement device using the database.
 1567. The method of claim 1564,wherein the database further comprises first, second, and thirdproperties of a plurality of specimens.
 1568. The method of claim 1567,wherein the first, second, and third properties of the plurality ofspecimens are generated using a plurality of measurement devices. 1569.The method of claim 1568, further comprising calibrating the pluralityof measurement devices using the database.
 1570. The method of claim1568, further comprising monitoring output signals of the plurality ofmeasurement devices using the database.
 1571. The method of claim 1500,wherein a stand alone system is coupled to the measurement device, themethod further comprising calibrating the stand alone system with acalibration standard and calibrating the measurement device with thestand alone system.
 1572. The method of claim 1500, wherein a standalone system is coupled to the measurement device and at least oneadditional measurement device, the method further comprising calibratingthe stand alone system with a calibration standard and calibrating themeasurement device an at least the one additional measurement devicewith the stand alone system.
 1573. The method of claim 1500, furthercomprising determining at least the two properties of the specimen atmore than one position on the specimen, wherein the specimen comprises awafer, the method further comprising altering at least one parameter ofone or more instruments coupled to a process tool in response to atleast one of the determined properties of the specimen at the more thanone position on the specimen to reduce within wafer variation of atleast one of the determined properties.
 1574. The method of claim 1500,further comprising altering a parameter of one or more instrumentscoupled to a process tool in response to at least one of the determinedproperties of the specimen using a feedback control technique.
 1575. Themethod of claim 1500, further comprising altering a parameter of one ormore instruments coupled to a process tool in response to at least oneof the determined properties of the specimen using a feedforward controltechnique.
 1576. The method of claim 1500, further comprising monitoringa parameter of one or more instruments coupled to the process tool.1577. The method of claim 1576, further comprising determining arelationship between the determined properties and at least one of themonitored parameters.
 1578. The method of claim 1577, further comprisingaltering a parameter of at least one of the instruments in response tothe relationship.
 1579. The method of claim 1500, further comprisingaltering a parameter of one or more instruments coupled to a pluralityof process tools in response to the at least one of the determinedproperties of the specimen.
 1580. The method of claim 1500, whereinprocessing the one or more output signals comprises: at least partiallyprocessing the one or more output signals using a local processor,wherein the local processor is coupled to the measurement device;sending the partially processed one or more output signals from thelocal processor to a remote controller computer; and further processingthe partially processed one or more output signals using the remotecontroller computer.
 1581. The method of claim 1580, wherein at leastpartially processing the one or more output signals comprisesdetermining the first, second, and third properties of the specimen.1582. The method of claim 1580, wherein further processing the partiallyprocessed one or more output signals comprises determining the first,second, and third properties of the specimen.
 1583. Acomputer-implemented method for controlling a system configured todetermine at least three properties of a specimen during use, whereinthe system comprises a measurement device, comprising: controlling themeasurement device, wherein the measurement device comprises anillumination system and a detection system, and wherein the measurementdevice is coupled to a stage, comprising: controlling the illuminationsystem to direct energy toward a surface of the specimen; controllingthe detection system to detect energy propagating from the surface ofthe specimen; and generating one or more output signals in response tothe detected energy; and processing the one or more output signals todetermine a first property, a second property, and a third property ofthe specimen, wherein the first property comprises a critical dimensionof the specimen, wherein the second property comprises a presence ofdefects on the specimen, and wherein the third property comprises a thinfilm characteristic of the specimen.
 1584. The method of claim 1583,further comprising controlling the stage, wherein the stage isconfigured to support the specimen.
 1585. The method of claim 1583,further comprising controlling the stage to laterally move the stageduring said directing energy and said detecting energy.
 1586. The methodof claim 1583, further comprising controlling the stage to rotatablymove the stage during said directing energy and said detecting energy.1587. The method of claim 1583, further comprising controlling the stageto laterally and rotatably move the stage during said directing energyand said detecting energy.
 1588. The method of claim 1583, wherein theillumination system comprises a single energy source.
 1589. The methodof claim 1583, wherein the illumination system comprises more than oneenergy source.
 1590. The method of claim 1583, wherein the detectionsystem comprises a single energy sensitive device.
 1591. The method ofclaim 1583, wherein the detection system comprises more than one energysensitive devices.
 1592. The method of claim 1583, wherein themeasurement device farther comprises a non-imaging scatterometer. 1593.The method of claim 1583, wherein the measurement device furthercomprises a scatterometer.
 1594. The method of claim 1583, wherein themeasurement device further comprises a spectroscopic scatterometer.1595. The method of claim 1583, wherein the measurement device furthercomprises a reflectometer.
 1596. The method of claim 1583, wherein themeasurement device further comprises a spectroscopic reflectometer.1597. The method of claim 1583, wherein the measurement device furthercomprises a coherence probe microscope.
 1598. The method of claim 1583,wherein the measurement device further comprises a bright field imagingdevice.
 1599. The method of claim 1583, wherein the measurement devicefurther comprises a dark field imaging device.
 1600. The method of claim1583, wherein the measurement device further comprises a bright fieldand dark field imaging device.
 1601. The method of claim 1583, whereinthe measurement device further comprises a non-imaging bright fielddevice.
 1602. The method of claim 1583, wherein the measurement devicefurther comprises a non-imaging dark field device.
 1603. The method ofclaim 1583, wherein the measurement device further comprises anon-imaging bright field and dark field device.
 1604. The method ofclaim 1583, wherein the measurement device further comprises anellipsometer.
 1605. The method of claim 1583, wherein the measurementdevice further comprises a spectroscopic ellipsometer.
 1606. The methodof claim 1583, wherein the measurement device further comprises a dualbeam spectrophotometer.
 1607. The method of claim 1583, wherein themeasurement device further comprises a beam profile ellipsometer. 1608.The method of claim 1583, wherein the measurement device furthercomprises at least a first measurement device and a second measurementdevice, and wherein the first and second measurement devices areselected from the group consisting of a non-imaging scatterometer, ascatterometer, a spectroscopic scatterometer, a reflectometer, aspectroscopic reflectometer, a coherence probe microscope, a brightfield imaging device, a dark field imaging device, a bright field anddark field imaging device, a non-imaging bright field device, anon-imaging dark field device, a non-imaging bright field and dark fielddevice, an ellipsometer, a spectroscopic ellipsometer, a dual beamspectrophotometer, and a beam profile ellipsometer.
 1609. The method ofclaim 1583, wherein the measurement device further comprises at least afirst measurement device and a second measurement device, and whereinoptical elements of the first measurement device comprise opticalelements of the second measurement device.
 1610. The method of claim1583, wherein the defects comprise micro defects and macro defects.1611. The method of claim 1583, wherein the defects comprises microdefects or macro defects.
 1612. The method of claim 1583, wherein thethin film characteristic comprises a thickness of a copper film, andwherein the defects comprise voids in the copper film.
 1613. The methodof claim 1583, wherein the defects comprise macro defects on a back sideof the specimen, and wherein the macro defects comprise coppercontamination.
 1614. The method of claim 1583, further comprisingprocessing the one or more output signals to determine a fourth propertyof the specimen, wherein the fourth property is selected from the groupconsisting of a roughness of the specimen, a roughness of a layer on thespecimen, and a roughness of a feature of the specimen.
 1615. The methodof claim 1614, wherein the stage and the measurement device are coupledto a process tool selected from the group consisting of a lithographytool, an atomic layer deposition tool, a cleaning tool, and an etchtool.
 1616. The method of claim 1583, further comprising: controllingthe illumination system to direct energy toward a bottom surface of thespecimen; and controlling the detection system to detect energypropagating from the bottom surface of the specimen, wherein the secondproperty comprises a presence of defects on the bottom surface of thespecimen.
 1617. The method of claim 1616, wherein the defects comprisemacro defects.
 1618. The method of claim 1583, wherein the measurementdevice further comprises non-optical components, and wherein controllingthe detection system comprises controlling the detection system tomeasure a non-optical characteristic of the surface of the specimen.1619. The method of claim 1583, wherein the measurement device furthercomprises at least an eddy current device and a spectroscopicellipsometer.
 1620. The method of claim 1583, wherein the measurementdevice further comprises at least an eddy current device and aspectroscopic ellipsometer, and wherein the system is coupled to anatomic layer deposition tool.
 1621. The method of claim 1583, whereinprocessing the one or more output signals to determine the first,second, and third properties of the specimen comprises substantiallysimultaneously determining the first, second, and third properties ofthe specimen.
 1622. The method of claim 1583, further comprisingcontrolling the illumination system to direct energy toward multiplelocations on the surface of the specimen substantially simultaneouslyand controlling the detection system to detect energy propagating fromthe multiple locations substantially simultaneously such that the first,second, and third properties of the specimen at the multiple locationscan be determined substantially simultaneously.
 1623. The method ofclaim 1583, wherein the stage and the measurement device are coupled toa process tool.
 1624. The method of claim 1583, wherein the stage andthe measurement device are coupled to a process tool, and wherein thestage and the measurement device are arranged laterally proximate to theprocess tool.
 1625. The method of claim 1583, wherein the stage and themeasurement device are coupled to a process tool, and wherein the stageand the measurement device are disposed within the process tool. 1626.The method of claim 1583, wherein the stage and the measurement deviceare coupled to a process tool, and wherein the process tool is selectedfrom the group consisting of a lithography tool, an etch tool, and adeposition tool.
 1627. The method of claim 1583, wherein the stage andthe measurement device are coupled to a process tool, the method furthercomprising controlling a wafer handler to move the specimen from theprocess tool to the stage, and wherein the wafer handler is coupled tothe process tool.
 1628. The method of claim 1583, wherein the stage andthe measurement device are coupled to a process tool, the method furthercomprising controlling the stage to move the specimen from the system tothe process tool.
 1629. The method of claim 1583, wherein the stage andthe measurement device are coupled to a process tool, the method furthercomprising controlling a wafer handler to move the specimen from theprocess tool to the stage such that at least the two properties of thespecimen can be determined while the specimen is waiting between processsteps.
 1630. The method of claim 1583, wherein the stage and themeasurement device are coupled to a process tool, wherein the processtool comprises a support device configured to support the specimenduring a process step, and wherein an upper surface of the supportdevice is substantially parallel to an upper surface of the stage. 1631.The method of claim 1583, wherein the stage and the measurement deviceare coupled to a process tool, wherein the process tool comprises asupport device configured to support the specimen during a process step,and wherein an upper surface of the stage is angled with respect to anupper surface of the support device.
 1632. The method of claim 1583,wherein the stage and the measurement device are disposed within ameasurement chamber, and wherein the measurement chamber is coupled to aprocess tool.
 1633. The method of claim 1583, wherein the stage and themeasurement device are disposed within a measurement chamber, andwherein the measurement chamber is disposed within a process tool. 1634.The method of claim 1583, wherein the stage and the measurement deviceare disposed within a measurement chamber, and wherein the measurementchamber is arranged laterally proximate to a process chamber of aprocess tool.
 1635. The method of claim 1583, wherein the stage and themeasurement device are disposed within a measurement chamber, andwherein the measurement chamber is arranged vertically proximate to aprocess chamber of a process tool.
 1636. The method of claim 1583,further comprising disposing the specimen upon a support device disposedwithin a process chamber of a process tool, and wherein the supportdevice is configured to support the specimen during a process step.1637. The method of claim 1636, further comprising controlling theillumination system and controlling the detection system during theprocess step.
 1638. The method of claim 1637, further comprisingcontrolling the system to obtain a signature characterizing the processstep, wherein the signature comprises at least one singularityrepresentative of an end of the process step.
 1639. The method of claim1637, further comprising controlling the system to alter a parameter ofone or more instruments coupled to the process tool in response to atleast one of the determined properties using an in situ controltechnique.
 1640. The method of claim 1583, further comprisingcontrolling the stage to move the specimen from a first process chamberto a second process chamber, wherein the first process chamber and thesecond process chamber are disposed within a process tool.
 1641. Themethod of claim 1640, further comprising controlling the illuminationsystem and controlling the detection system during said moving thespecimen from the first process chamber to the second process chamber.1642. The method of claim 1583, further comprising comparing at leastone of the determined properties of the specimen and determinedproperties of a plurality of specimens.
 1643. The method of claim 1583,further comprising comparing at least one of the determined propertiesof the specimen to a predetermined range for the property.
 1644. Themethod of claim 1643, further comprising generating an output signal ifat least one of the determined properties of the specimen is outside ofthe predetermined range for the property.
 1645. The method of claim1583, further comprising altering a sampling frequency of themeasurement device in response to at least one of the determinedproperties of the specimen.
 1646. The method of claim 1583, furthercomprising altering a parameter of one or more instruments coupled tothe measurement device in response to at least one of the determinedproperties using a feedback control technique.
 1647. The method of claim1583, further comprising altering a parameter of one or more instrumentscoupled to the measurement device in response to at least one of thedetermined properties using a feedforward control technique.
 1648. Themethod of claim 1583, further comprising generating a database, whereinthe database comprises the determined first, second, and thirdproperties of the specimen.
 1649. The method of claim 1648, furthercomprising calibrating the measurement device using the database. 1650.The method of claim 1648, further comprising monitoring output signalsof the measurement device using the database.
 1651. The method of claim1648, wherein the database further comprises first, second, and thirdproperties of a plurality of specimens.
 1652. The method of claim 1648,wherein the first, second, and third properties of the plurality ofspecimens are generated using a plurality of measurement devices. 1653.The method of claim 1652, further comprising calibrating the pluralityof measurement devices using the database.
 1654. The method of claim1652, further comprising monitoring output signals of the plurality ofmeasurement devices using the database.
 1655. The method of claim 1583,wherein a stand alone system is coupled to the system, the methodfurther comprising controlling the stand alone system to calibrate thestand alone system with a calibration standard and further controllingthe stand alone system to calibrate the system.
 1656. The method ofclaim 1583, wherein a stand alone system is coupled to the system and atleast one additional system, the method further comprising controllingthe stand alone system to calibrate the stand alone system with acalibration standard and further controlling the stand alone system tocalibrate the system and at least the one additional system.
 1657. Themethod of claim 1583, wherein the system is further configured todetermine at least the two properties of the specimen at more than oneposition on the specimen, and wherein the specimen comprises a wafer,the method further comprising altering at least one parameter of one ormore instruments coupled to a process tool in response to at least oneof the determined properties of the specimen at the more than oneposition on the specimen to reduce within wafer variation of at leastone of the determined properties.
 1658. The method of claim 1583,further comprising altering a parameter of one or more instrumentscoupled to a process tool in response to at least one of the determinedproperties of the specimen using a feedback control technique.
 1659. Themethod of claim 1583, further comprising altering a parameter of one ormore instruments coupled to a process tool in response to at least oneof the determined properties of the specimen using a feedforward controltechnique.
 1660. The method of claim 1583, further comprising monitoringa parameter of one or more instruments coupled to the process tool.1661. The method of claim 1660, further comprising determining arelationship between the determined properties and at least one of themonitored parameters.
 1662. The method of claim 1661, further comprisingaltering a parameter of at least one of the instruments in response tothe relationship.
 1663. The method of claim 1583, further comprisingaltering a parameter of one or more instruments coupled to a pluralityof process tools in response to at least one of the determinedproperties of the specimen.
 1664. The method of claim 1583, whereinprocessing the one or more output signals comprises: at least partiallyprocessing the one or more output signals using a local processor,wherein the local processor is coupled to the measurement device;sending the partially processed one or more output signals from thelocal processor to a remote controller computer; and further processingthe partially processed one or more output signals using the remotecontroller computer.
 1665. The method of claim 1664, wherein at leastpartially processing the one or more output signals comprisesdetermining the first, second, and third properties of the specimen.1666. The method of claim 1664, wherein further processing the partiallyprocessed one or more output signals comprises determining the first,second, and third properties of the specimen.
 1667. A semiconductordevice fabricated by a method, the method comprising: forming a portionof the semiconductor device upon a specimen; disposing the specimen upona stage, wherein the stage is coupled to a measurement device, andwherein the measurement device comprises an illumination system and adetection system; directing energy toward a surface of the specimenusing the illumination system; detecting energy propagating from thesurface of the specimen using the detection system; generating one ormore output signals responsive to the detected energy; and processingthe one or more output signals to determine a first property, a secondproperty, and a third property of the specimen, wherein the firstproperty comprises a critical dimension of the specimen, wherein thesecond property comprises a presence of defects on the specimen, andwherein the third property comprises a thin film characteristic of thespecimen.
 1668. The device of claim 1667, wherein the illuminationsystem comprises a single energy source.
 1669. The device of claim 1667,wherein the illumination system comprises more than one energy source.1670. The device of claim 1667, wherein the detection system comprises asingle energy sensitive device.
 1671. The device of claim 1667, whereinthe detection system comprises more than one energy sensitive devices.1672. The device of claim 1667, wherein the measurement device isselected from the group consisting of a non-imaging scatterometer, ascatterometer, a spectroscopic scatterometer, a reflectometer, aspectroscopic reflectometer, a coherence probe microscope, a brightfield imaging device, a dark field imaging device, a bright field anddark field imaging device, a non-imaging bright field device, anon-imaging dark field device, a non-imaging bright field and dark fielddevice, an ellipsometer, a spectroscopic ellipsometer, a dual beamspectrophotometer, and a beam profile ellipsometer.
 1673. The device ofclaim 1667, wherein the measurement device further comprises at least afirst measurement device and a second measurement device, and whereinthe first and second measurement devices are selected from the groupconsisting of a non-imaging scatterometer, a scatterometer, aspectroscopic scatterometer, a reflectometer, a spectroscopicreflectometer, a coherence probe microscope, a bright field imagingdevice, a dark field imaging device, a bright field and dark fieldimaging device, a non-imaging bright field device, a non-imaging darkfield device, a non-imaging bright field and dark field device, anellipsometer, a spectroscopic ellipsometer, a dual beamspectrophotometer, and a beam profile ellipsometer.
 1674. The device ofclaim 1667, wherein the measurement device further comprises at least afirst measurement device and a second measurement device, and whereinoptical elements of the first measurement device comprise opticalelements of the second measurement device.
 1675. The device of claim1667, wherein the defects comprise micro defects and macro defects.1676. The device of claim 1667, wherein the defects comprises microdefects or macro defects.
 1677. The device of claim 1667, wherein thethin film characteristic comprises a thickness of a copper film, andwherein the defects comprise voids in the copper film.
 1678. The deviceof claim 1667, wherein the defects comprise macro defects on a back sideof the specimen, and wherein the macro defects comprise coppercontamination.
 1679. The device of claim 1667, further comprisingprocessing the one or more output signals to determine a fourth propertyof the specimen, wherein the fourth property is selected from the groupconsisting of a roughness of the specimen, a roughness of a layer on thespecimen, and a roughness of a feature of the specimen.
 1680. The deviceof claim 1679, wherein the stage and the measurement device are coupledto a process tool selected from the group consisting of a lithographytool, an atomic layer deposition tool, a cleaning tool, and an etchtool.
 1681. The device of claim 1667, further comprising: directingenergy toward a bottom surface of the specimen; and detecting energypropagating from the bottom surface of the specimen, wherein the secondproperty comprises a presence of defects on the bottom surface of thespecimen.
 1682. The device of claim 1681, wherein the defects comprisemacro defects.
 1683. The device of claim 1667, wherein the measurementdevice further comprises non-optical components, and wherein detectingenergy comprises measuring a nonoptical characteristic of the surface ofthe specimen.
 1684. The device of claim 1667, wherein the measurementdevice further comprises at least an eddy current device and aspectroscopic ellipsometer.
 1685. The device of claim 1667, wherein themeasurement device further comprises at least an eddy current device anda spectroscopic ellipsometer, and wherein the measurement device isfurther coupled to an atomic layer deposition tool.
 1686. The device ofclaim 1667, wherein the stage and the measurement device are coupled toa process tool.
 1687. The device of claim 1667, wherein the stage andthe measurement device are coupled to a process tool, and wherein theprocess tool is selected from the group consisting of a lithographytool, an etch tool, and a deposition tool.
 1688. A method forfabricating a semiconductor device, comprising: forming a portion of thesemiconductor device upon a specimen; disposing the specimen upon astage, wherein the stage is coupled to a measurement device, and whereinthe measurement device comprises an illumination system and a detectionsystem; directing energy toward a surface of the specimen using theillumination system; detecting energy propagating from the surface ofthe specimen using the detection system; generating one or more outputsignals responsive to the detected energy; and processing the one ormore output signals to determine a first property, a second property,and a third property of the specimen, wherein the first propertycomprises a critical dimension of the specimen, wherein the secondproperty comprises a presence of defects on the specimen, and whereinthe third property comprises a thin film characteristic of the portionof the specimen.
 1689. The method of claim 1688, wherein theillumination system comprises a single energy source.
 1690. The methodof claim 1688, wherein the illumination system comprises more than oneenergy source.
 1691. The method of claim 1688, wherein the detectionsystem comprises a single energy sensitive device.
 1692. The method ofclaim 1688, wherein the detection system comprises more than one energysensitive devices.
 1693. The method of claim 1688, wherein themeasurement device is selected from the group consisting of anon-imaging scatterometer, a scatterometer, a spectroscopicscatterometer, a reflectometer, a spectroscopic reflectometer, acoherence probe microscope, a bright field imaging device, a dark fieldimaging device, a bright field and dark field imaging device, anon-imaging bright field device, a non-imaging dark field device, anon-imaging bright field and dark field device, an ellipsometer, aspectroscopic ellipsometer, a dual beam spectrophotometer, and a beamprofile ellipsometer.
 1694. The method of claim 1688, wherein themeasurement device further comprises at least a first measurement deviceand a second measurement device, and wherein the first and secondmeasurement devices are selected from the group consisting of anon-imaging scatterometer, a scatterometer, a spectroscopicscatterometer, a reflectometer, a spectroscopic reflectometer, acoherence probe microscope, a bright field imaging device, a dark fieldimaging device, a bright field and dark field imaging device, anon-imaging bright field device, a non-imaging dark field device, anon-imaging bright field and dark field device, an ellipsometer, aspectroscopic ellipsometer, a dual beam spectrophotometer, and a beamprofile ellipsometer.
 1695. The method of claim 1688, wherein themeasurement device further comprises at least a first measurement deviceand a second measurement device, and wherein optical elements of thefirst measurement device comprise optical elements of the secondmeasurement device.
 1696. The method of claim 1688, wherein the defectscomprise micro defects and macro defects.
 1697. The method of claim1688, wherein the defects comprises micro defects or macro defects.1698. The method of claim 1688, wherein the thin film characteristiccomprises a thickness of a copper film, and wherein the defects comprisevoids in the copper film.
 1699. The method of claim 1688, wherein thedefects comprise macro defects on a back side of the specimen, andwherein the macro defects comprise copper contamination.
 1700. Themethod of claim 1688, further comprising processing the one or moreoutput signals to determine a fourth property of the specimen, whereinthe fourth property is selected from the group consisting of a roughnessof the specimen, a roughness of a layer on the specimen, and a roughnessof a feature of the specimen.
 1701. The method of claim 1700, whereinthe stage and the measurement device are coupled to a process toolselected from the group consisting of a lithography tool, an atomiclayer deposition tool, a cleaning tool, and an etch tool.
 1702. Themethod of claim 1688, further comprising: directing energy toward abottom surface of the specimen; and detecting energy propagating fromthe bottom surface of the specimen, wherein the second propertycomprises a presence of defects on the bottom surface of the specimen.1703. The method of claim 1702, wherein the defects comprise macrodefects.
 1704. The method of claim 1688, wherein the measurement devicefurther comprises non-optical components, and wherein detecting energycomprises measuring a nonoptical characteristic of the surface of thespecimen.
 1705. The method of claim 1688, wherein the measurement devicefurther comprises at least an eddy current device and a spectroscopicellipsometer.
 1706. The method of claim 1688, wherein the measurementdevice further comprises at least an eddy current device and aspectroscopic ellipsometer, and wherein the measurement device isfurther coupled to an atomic layer deposition tool.
 1707. The method ofclaim 1688, wherein the stage and the measurement device are coupled toa process tool.
 1708. The method of claim 1688, wherein the stage andthe measurement device are coupled to a process tool, and wherein theprocess tool is selected from the group consisting of a lithographytool, an etch tool, and a deposition tool.
 1709. A system configured todetermine at least three properties of a specimen during use,comprising: a stage configured to support the specimen during use; ameasurement device coupled to the stage, comprising: an illuminationsystem configured to direct energy toward a surface of the specimenduring use; and a detection system coupled to the illumination systemand configured to detect energy propagating from the surface of thespecimen during use, wherein the measurement device is configured togenerate one or more output signals responsive to the detected energyduring use; a local processor coupled to the measurement device andconfigured to at least partially process the one or more output signalsduring use; and a remote controller computer coupled to the localprocessor, wherein the remote controller computer is configured toreceive the at least partially processed one or more output signals andto determine a first property, a second property, and a third propertyof the specimen from the at least partially processed one or more outputsignals during use, wherein the first property comprises a criticaldimension of the specimen, wherein the second property comprises apresence of defects on the specimen, and wherein the third propertycomprises a thin film characteristic of the specimen.
 1710. The systemof claim 1709, wherein the measurement device is selected from the groupconsisting of a non-imaging scatterometer, a scatterometer, aspectroscopic scatterometer, a reflectometer, a spectroscopicreflectometer, a coherence probe microscope, a bright field imagingdevice, a dark field imaging device, a bright field and dark fieldimaging device, a non-imaging bright field device, a non-imaging darkfield device, a non-imaging bright field and dark field device, anellipsometer, a spectroscopic ellipsometer, a dual beamspectrophotometer, and a beam profile ellipsometer.
 1711. The system ofclaim 1709, wherein the measurement device further comprises at least afirst measurement device and a second measurement device, and whereinthe first and second measurement devices are selected from the groupconsisting of a non-imaging scatterometer, a scatterometer, aspectroscopic scatterometer, a reflectometer, a spectroscopicreflectometer, a coherence probe microscope, a bright field imagingdevice, a dark field imaging device, a bright field and dark fieldimaging device, a non-imaging bright field device, a non-imaging darkfield device, a non-imaging bright field and dark field device, andellipsometer, a spectroscopic ellipsometer, a dual beamspectrophotometer, and a beam profile ellipsometer.
 1712. The system ofclaim 1709, wherein the measurement device further comprises at least afirst measurement device and a second measurement device, and whereinoptical elements of the first measurement device comprise opticalelements of the second measurement device.
 1713. The system of claim1709, wherein the defects comprise micro defects and macro defects.1714. The system of claim 1709, wherein the defects comprises microdefects or macro defects.
 1715. The system of claim 1709, wherein thethin film characteristic comprises a thickness of a copper film, andwherein the defects comprise voids in the copper film.
 1716. The systemof claim 1709, wherein the defects comprise macro defects on a back sideof the specimen, and wherein the macro defects comprise coppercontamination.
 1717. The system of claim 1709, wherein the remotecontroller computer is further configured to determine a fourth propertyof the specimen from the at least partially processed one or more outputsignals during use, and wherein the fourth property is selected from thegroup consisting of a roughness of the specimen, a roughness of a layeron the specimen, and a roughness of a feature of the specimen.
 1718. Thesystem of claim 1717, wherein the system is coupled to a process toolselected from the group consisting of a lithography tool, an atomiclayer deposition tool, a cleaning tool, and an etch tool.
 1719. Thesystem of claim 1709, wherein the illumination system is furtherconfigured to direct energy toward a bottom surface of the specimenduring use, wherein the detection system is further configured to detectenergy propagating from the bottom surface of the specimen during use,and wherein the second property further comprises a presence of defectson the bottom surface of the specimen.
 1720. The system of claim 1719,wherein the defects comprise macro defects.
 1721. The system of claim1709, wherein the illumination system and the detection system comprisenon-optical components, and wherein the detected energy is responsive toa non-optical characteristic of the surface of the specimen.
 1722. Thesystem of claim 1709, wherein the measurement device further comprisesat least an eddy current device and a spectroscopic ellipsometer. 1723.The system of claim 1709, wherein the measurement device furthercomprises at least an eddy current device and a spectroscopicellipsometer, and wherein the system is coupled to an atomic layerdeposition tool.
 1724. The system of claim 1709, wherein the remotecontroller computer is coupled to a process tool.
 1725. The system ofclaim 1709, wherein the remote controller computer is coupled to aprocess tool, and wherein the process tool is selected from a groupconsisting of a lithography tool, an etch tool, and a deposition tool.1726. The system of claim 1709, wherein the remote controller computeris coupled to a process tool, and wherein the remote controller computeris further configured to alter a parameter of one or more instrumentscoupled to the process tool in response to at least one of thedetermined properties using a feedback control technique during use.1727. The system of claim 1709, wherein the remote controller computeris coupled to a process tool, and wherein the remote controller computeris further configured to alter a parameter of one or more instrumentscoupled to the process tool in response to at least one of thedetermined properties using a feedforward control technique during use.1728. The system of claim 1709, wherein the remote controller computeris coupled to a process tool, and wherein the remote controller computeris further configured to monitor a parameter of one or more instrumentscoupled to the process tool during use.
 1729. The system of claim 1728,wherein the remote controller computer is further configured todetermine a relationship between the determined properties and at leastone of the monitored parameters during use.
 1730. The system of claim1729, wherein the remote controller computer is further configured toalter a parameter of at least one of the instruments in response to therelationship during use.
 1731. The system of claim 1709, wherein theremote controller computer is coupled to a process tool, wherein theillumination system is further configured to direct energy toward thesurface of the specimen during a process step, wherein the detectionsystem is further configured to detect energy propagating from thesurface of the specimen during the process step, and wherein the remotecontroller computer is further configured to determine the first,second, and third properties of the specimen during the process step.1732. The system of claim 1731, wherein the remote controller computeris further configured to obtain a signature characterizing the processstep during use, and wherein the signature comprises at least onesingularity representative of an end of the process step.
 1733. Thesystem of claim 1731, wherein the remote controller computer is furtherconfigured to alter a parameter of one or more instruments coupled tothe process tool in response to at least one of the determinedproperties using an in situ control technique during use.
 1734. Thesystem of claim 1709, wherein a process tool comprises a first processchamber and a second process chamber, and wherein the stage is furtherconfigured to move the specimen from the first process chamber to thesecond process chamber during use.
 1735. The system of claim 1734,wherein the illumination system is further configured to direct energytoward the surface of the specimen during said moving, wherein thedetection system is further configured to detect energy propagating fromthe surface of the specimen during said moving, and wherein the remotecontroller computer is further configured to determine the first,second, and third properties of the specimen during said moving. 1736.The system of claim 1709, wherein the remote controller computer isfurther configured to compare at least one of the determined propertiesof the specimen and properties of a plurality of specimens during use.1737. The system of claim 1709, wherein the remote controller computeris further configured to compare at least one of the determinedproperties of the specimen to a predetermined range for the propertyduring use.
 1738. The system of claim 1737, wherein the remotecontroller computer is further configured to generate an output signalif at least one of the determined properties of the specimen is outsideof the predetermined range for the property during use.
 1739. The systemof claim 1709, wherein the remote controller computer is furtherconfigured to alter a sampling frequency of the measurement device inresponse to at least one of the determined properties of the specimenduring use.
 1740. The system of claim 1709, wherein the remotecontroller computer is further configured to alter a parameter of one ormore instruments coupled to the measurement device in response to atleast one of the determined properties using a feedback controltechnique during use.
 1741. The system of claim 1709, wherein the remotecontroller computer is further configured to alter a parameter of one ormore instruments coupled to the measurement device in response to atleast one of the determined properties using a feedforward controltechnique during use.
 1742. The system of claim 1709, wherein the remotecontroller computer is further configured to generate a database duringuse, wherein the database comprises the determined first, second, andthird properties of the specimen.
 1743. The system of claim 1742,wherein the remote controller computer is further configured tocalibrate the measurement device using the database during use. 1744.The system of claim 1742, wherein the remote controller computer isfurther configured to monitor output signals generated by measurementdevice using the database during use.
 1745. The system of claim 1742,wherein the database further comprises first, second, and thirdproperties of a plurality of specimens.
 1746. The system of claim 1745,wherein the first, second, and third properties of the plurality ofspecimens are determined using a plurality of measurement devices. 1747.The system of claim 1746, wherein the remote controller computer isfurther coupled to the plurality of measurement devices.
 1748. Thesystem of claim 1747, wherein the remote controller computer is furtherconfigured to calibrate the plurality of measurement devices using thedatabase during use.
 1749. The system of claim 1747, wherein the remotecontroller computer is further configured to monitor output signalsgenerated by the plurality of measurement devices using the databaseduring use.
 1750. The system of claim 1709, wherein the remotecontroller computer is further coupled to a plurality of measurementdevices, and wherein each of the plurality of measurement devices iscoupled to one of a plurality of process tools.
 1751. A method fordetermining at least three properties of a specimen, comprising:disposing the specimen upon a stage, wherein the stage is coupled to ameasurement device, and wherein the measurement device comprises anillumination system and a detection system; directing energy toward asurface of the specimen using the illumination system; detecting energypropagating from the surface of the specimen using the detection system;generating one or more output signals responsive to the detected energy;and processing the one or more output signals to determine a firstproperty, a second property, and a third property of the specimen,wherein the first property comprises a critical dimension of thespecimen, wherein the second property comprises a presence of defects onthe specimen, and wherein the third property comprises a thin filmcharacteristic of the specimen, comprising: at least partiallyprocessing the one or more output signals using a local processor,wherein the local processor is coupled to the measurement device;sending the partially processed one or more output signals from thelocal processor to a remote controller computer; and further processingthe partially processed one or more output signals using the remotecontroller computer.
 1752. The method of claim 1751, wherein themeasurement device is selected from the group consisting of anon-imaging scatterometer, a scatterometer, a spectroscopicscatterometer, a reflectometer, a spectroscopic reflectometer, acoherence probe microscope, a bright field imaging device, a dark fieldimaging device, a bright field and dark field imaging device, anon-imaging bright field device, a non-imaging dark field device, anon-imaging bright field and dark field device, an ellipsometer, aspectroscopic ellipsometer, a dual beam spectrophotometer, and a beamprofile ellipsometer.
 1753. The method of claim 1751, wherein themeasurement device further comprises at least a first measurement deviceand a second measurement device, and wherein the first and secondmeasurement devices are selected from the group consisting of anon-imaging scatterometer, a scatterometer, a spectroscopicscatterometer, a reflectometer, a spectroscopic reflectometer, acoherence probe microscope, a bright field imaging device, a dark fieldimaging device, a bright field and dark field imaging device, anon-imaging bright field device, a non-imaging dark field device, anon-imaging bright field and dark field device, an ellipsometer, aspectroscopic ellipsometer, a dual beam spectrophotometer, and a beamprofile ellipsometer.
 1754. The method of claim 1751, wherein themeasurement device further comprises at least a first measurement deviceand a second measurement device, and wherein optical elements of thefirst measurement device comprise optical elements of the secondmeasurement device.
 1755. The method of claim 1751, wherein the defectscomprise micro defects and macro defects.
 1756. The method of claim1751, wherein the defects comprises micro defects or macro defects.1757. The method of claim 1751, wherein the thin film characteristiccomprises a thickness of a copper film, and wherein the defects comprisevoids in the copper film.
 1758. The method of claim 1751, wherein thedefects comprise macro defects on a back side of the specimen, andwherein the macro defects comprise copper contamination.
 1759. Themethod of claim 1751, further comprising processing the one or moreoutput signals to determine a fourth property of the specimen, whereinthe fourth property is selected from the group consisting of a roughnessof the specimen, a roughness of a layer on the specimen, and a roughnessof a feature of the specimen.
 1760. The method of claim 1759, whereinthe stage and the measurement device are coupled to a process toolselected from the group consisting of a lithography tool, an atomiclayer deposition tool, a cleaning tool, and an etch tool.
 1761. Themethod of claim 1751, further comprising: directing energy toward abottom surface of the specimen; and detecting energy propagating fromthe bottom surface of the specimen, wherein the second propertycomprises a presence of defects on the bottom surface of the specimen.1762. The method of claim 1761, wherein the defects comprise macrodefects.
 1763. The method of claim 1751, wherein the measurement devicefurther comprises non-optical components, and wherein detecting energycomprising measuring a nonoptical characteristic of the specimen. 1764.The method of claim 1751, wherein the measurement device furthercomprises at least an eddy current device and a spectroscopicellipsometer.
 1765. The method of claim 1751, wherein the measurementdevice further comprises at least an eddy current device and aspectroscopic ellipsometer, and wherein the measurement device isfurther coupled to an atomic layer deposition tool.
 1766. The method ofclaim 1751, wherein the remote controller computer is coupled to aprocess tool.
 1767. The method of claim 1751, wherein the remotecontroller computer is coupled to a process tool, and wherein theprocess tool is selected from the group consisting of a lithographytool, an etch tool, and a deposition tool.
 1768. The method of claim1751, wherein the remote controller computer is coupled to a processtool, the method further comprising altering a parameter of one or moreinstruments coupled to the process tool using the remote controllercomputer in response to at least one of the determined properties of thespecimen using a feedback control technique.
 1769. The method of claim1751, wherein the remote controller computer is coupled to a processtool, the method further comprising altering a parameter of one or moreinstruments coupled to the process tool using the remote controllercomputer in response to at least one of the determined properties of thespecimen using a feedforward control technique.
 1770. The method ofclaim 1751, wherein the remote controller computer is coupled to aprocess tool, the method further comprising monitoring a parameter ofone or more instruments coupled to the process tool using the remotecontroller computer.
 1771. The method of claim 1770, further comprisingdetermining a relationship between the determined properties and atleast one of the monitored parameters using the remote controllercomputer.
 1772. The method of claim 1771, further comprising altering aparameter of at least one of the instruments in response to therelationship using the remote controller computer.
 1773. The method ofclaim 1751, wherein the illumination system and the detection system arecoupled to a process chamber of the process tool, the method furthercomprising performing said directing and said detecting during a processstep.
 1774. The method of claim 1773, further comprising obtaining asignature characterizing the process step using the remote controllercomputer, wherein the signature comprises at least one singularityrepresentative of an end of the process step.
 1775. The method of claim1773, further comprising altering a parameter of one or more instrumentscoupled to the process tool using the remote controller computer inresponse to at least one of the determined properties using an in situcontrol technique.
 1776. The method of claim 1751, further comprising:moving the specimen from a first process chamber to a second processchamber using the stage; and performing said directing and saiddetecting during said moving the specimen.
 1777. The method of claim1751, further comprising comparing at least one of the determinedproperties of the specimen and determined properties of a plurality ofspecimens using the remote controller computer.
 1778. The method ofclaim 1751, further comprising comparing at least one of the determinedproperties of the specimen to a predetermined range for the propertyusing the remote controller computer.
 1779. The method of claim 1778,further comprising generating an output signal using the remotecontroller computer if at least one of the determined properties of thespecimen is outside of the predetermined range for the property. 1780.The method of claim 1751, wherein the remote controller computer iscoupled to the measurement device.
 1781. The method of claim 1780,further comprising altering a sampling frequency of the measurementdevice using the remote controller computer in response to at least oneof the determined properties of the specimen.
 1782. The method of claim1780, further comprising altering a parameter of one or more instrumentscoupled to the measurement device using the remote controller computerin response to at least one of the determined properties using afeedback control technique.
 1783. The method of claim 1780, furthercomprising altering a parameter of one or more instruments coupled tothe measurement device using the remote controller computer in responseto at least one of the determined properties using a feedforward controltechnique.
 1784. The method of claim 1751, further comprising generatinga database using the remote controller computer, wherein the databasecomprises the determined first, second, and third properties of thespecimen.
 1785. The method of claim 1784, further comprising calibratingthe measurement device using the database and the remote controllercomputer.
 1786. The method of claim 1784, further comprising monitoringoutput signals of the measurement device using the database and theremote controller computer.
 1787. The method of claim 1784, wherein thedatabase further comprises first, second, and third properties of aplurality of specimens.
 1788. The method of claim 1787, wherein thefirst, second, and third properties of the plurality of specimens aregenerated using a plurality of measurement devices.
 1789. The method ofclaim 1788, further comprising calibrating the plurality of measurementdevices using the database and the remote controller computer.
 1790. Themethod of claim 1788, further comprising monitoring output signals ofthe plurality of measurement devices using the database and the remotecontroller computer.
 1791. The method of claim 1751, further comprisingsending the at least partially processed one or more output signals froma plurality of local processors to the remote controller computer,wherein each of the plurality of local processors is coupled to one of aplurality of measurement devices.
 1792. The method of claim 1751,further comprising altering a parameter of one or more instrumentscoupled to at least one of a plurality of process tools using the remotecontroller computer in response to at least one of the determinedproperties of the specimen.
 1793. A system configured to determine atleast two properties of a specimen during use, comprising: a stageconfigured to support the specimen during use; a measurement devicecoupled to the stage, comprising: an illumination system configured todirect energy toward a surface of the specimen during use; and adetection system coupled to the illumination system and configured todetect energy propagating from the surface of the specimen during use,wherein the measurement device is configured to generate one or moreoutput signals responsive to the detected energy during use; and aprocessor coupled to the measurement device and configured to determinea first property and a second property of the specimen from the one ormore output signals during use, wherein the first property comprises apresence of macro defects on the specimen, and wherein the secondproperty comprises a presence of micro defects on the specimen. 1794.The system of claim 1793, wherein the stage is further configured tomove laterally during use.
 1795. The system of claim 1793, wherein thestage is further configured to move rotatably during use.
 1796. Thesystem of claim 1793, wherein the stage is further configured to movelaterally and rotatably during use.
 1797. The system of claim 1793,wherein the illumination system comprises a single energy source. 1798.The system of claim 1793, wherein the illumination system comprises morethan one energy source.
 1799. The system of claim 1793, wherein thedetection system comprises a single energy sensitive device.
 1800. Thesystem of claim 1793, wherein the detection system comprises more thanone energy sensitive devices. 1801 The system of claim 1793, wherein themeasurement device further comprises a non-imaging scatterometer. 1802.The system of claim 1793, wherein the measurement device furthercomprises a scatterometer.
 1803. The system of claim 1793, wherein themeasurement device further comprises a spectroscopic scatterometer.1804. The system of claim 1793, wherein the measurement device furthercomprises a reflectometer.
 1805. The system of claim 1793, wherein themeasurement device further comprises a spectroscopic reflectometer.1806. The system of claim 1793, wherein the measurement device furthercomprises an ellipsometer.
 1807. The system of claim 1793, wherein themeasurement device further comprises a spectroscopic ellipsometer. 1808.The system of claim 1793, wherein the measurement device furthercomprises a bright field imaging device.
 1809. The system of claim 1793,wherein the measurement device further comprises a dark field imagingdevice.
 1810. The system of claim 1793, wherein the measurement devicefurther comprises a bright field and dark field imaging device. 1811.The system of claim 1793, wherein the measurement device furthercomprises a non-imaging bright field device.
 1812. The system of claim1793, wherein the measurement device further comprises a non-imagingdark field device.
 1813. The system of claim 1793, wherein themeasurement device further comprises a non-imaging bright field and darkfield device.
 1814. The system of claim 1793, wherein the measurementdevice further comprises a double dark field device.
 1815. The system ofclaim 1793, wherein the measurement device further comprises at least afirst measurement device and a second measurement device, and whereinthe first and second measurement devices are selected from the groupconsisting of a non-imaging scatterometer, a scatterometer, aspectroscopic scatterometer, a reflectometer, a spectroscopicreflectometer, an ellipsometer, a spectroscopic ellipsometer, a brightfield imaging device, a dark field imaging device, a bright field anddark field imaging device, a non-imaging bright field device, anon-imaging dark field device, a non-imaging bright field and dark fielddevice, a double dark field device, an X-ray reflectometer, an X-rayfluorescence device, an optical fluorescence device, an eddy currentimaging device, and a relatively large spot e-beam device.
 1816. Thesystem of claim 1793, wherein the measurement device further comprisesat least a first measurement device and a second measurement device, andwherein optical elements of the first measurement device compriseoptical elements of the second measurement device.
 1817. The system ofclaim 1793, wherein the processor is further configured to determine athird property from the one or more output signals during use, whereinthe third property comprises a thickness of a copper film, and whereinthe macro defects or the micro defects comprise voids in the copperfilm.
 1818. The system of claim 1793, wherein the macro defects comprisecopper contamination on a back side of the specimen.
 1819. The system ofclaim 1793, wherein the processor is further configured to determine athird property of the specimen from the one or more output signalsduring use, and wherein the third property is selected from the groupconsisting of a roughness of the specimen, a roughness of a layer on thespecimen, and a roughness of a feature of the specimen.
 1820. The systemof claim 1819, wherein the system is coupled to a process tool selectedfrom the group consisting of a lithography tool, an atomic layerdeposition tool, a cleaning tool, and an etch tool.
 1821. The system ofclaim 1793, wherein the illumination system is further configured todirect energy toward a bottom surface of the specimen during use,wherein the detection system is further configured to detect energypropagating from the bottom surface of the specimen during use, andwherein the first property further comprises a presence of macro defectson the bottom surface of the specimen.
 1822. The system of claim 1793,wherein the system is further configured to determine at least twoproperties of the specimen substantially simultaneously during use.1823. The system of claim 1793, wherein the illumination system isfurther configured to direct energy to multiple locations on the surfaceof the specimen substantially simultaneously, and wherein the detectionsystem is further configured to detect energy propagating from themultiple locations on the surface of the specimen substantiallysimultaneously such that one or more of the at least two properties ofthe specimen can be determined at the multiple locations substantiallysimultaneously.
 1824. The system of claim 1793, wherein the system iscoupled to a process tool.
 1825. The system of claim 1793, wherein thesystem is coupled to a process tool, and wherein the system is disposedwithin the process tool.
 1826. The system of claim 1793, wherein thesystem is coupled to a process tool, and wherein the system is arrangedlaterally proximate to the process tool.
 1827. The system of claim 1793,wherein the system is coupled to a process tool, and wherein the processtool comprises a wafer handler configured to move the specimen to thestage during use.
 1828. The system of claim 1793, wherein the system iscoupled to a process tool, and wherein the stage is configured to movethe specimen from the system to the process tool during use.
 1829. Thesystem of claim 1793, wherein the system is coupled to a process tool,and wherein the stage is further configured to move the specimen to aprocess chamber of the process tool during use.
 1830. The system ofclaim 1793, wherein the system is coupled to a process tool, and whereinthe system is further configured to determine at least the twoproperties of the specimen while the specimen is waiting between processsteps.
 1831. The system of claim 1793, wherein the system is coupled toa process tool, wherein the process tool comprises a support deviceconfigured to support the specimen during a process step, and wherein anupper surface of the support device is substantially parallel to anupper surface of the stage.
 1832. The system of claim 1793, wherein thesystem is coupled to a process tool, wherein the process tool comprisesa support device configured to support the specimen during a processstep, and wherein an upper surface of the stage is angled with respectto an upper surface of the support device.
 1833. The system of claim1793, wherein the system is coupled to a process tool, and wherein theprocess tool is selected from the group consisting of a lithographytool, an etch tool, an ion implanter, a chemical-mechanical polishingtool, a deposition tool, a thermal tool, a cleaning tool, and a platingtool.
 1834. The system of claim 1793, wherein the system comprises ameasurement chamber, wherein the stage and the measurement device aredisposed within the measurement chamber, and wherein the measurementchamber is coupled to a process tool.
 1835. The system of claim 1793,wherein the system comprises a measurement chamber, wherein the stageand the measurement device are disposed within the measurement chamber,and wherein the measurement chamber is disposed within a process tool.1836. The system of claim 1793, wherein the system comprises ameasurement chamber, wherein the stage and the measurement device aredisposed within the measurement chamber, and wherein the measurementchamber is arranged laterally proximate to a process chamber of aprocess tool.
 1837. The system of claim 1793, wherein the systemcomprises a measurement chamber, wherein the stage and the measurementdevice are disposed within the measurement chamber, and wherein themeasurement chamber is arranged vertically proximate to a processchamber of a process tool.
 1838. The system of claim 1793, wherein aprocess tool comprises a process chamber, wherein the stage is disposedwithin the process chamber, and wherein the stage is further configuredto support the specimen during a process step.
 1839. The system of claim1838, wherein the processor is further configured to determine at leastthe first and second properties of the specimen during the process step.1840. The system of claim 1839, wherein the processor is furtherconfigured to obtain a signature characterizing the process step duringuse, and wherein the signature comprises at least one singularityrepresentative of an end of the process step.
 1841. The system of claim1839, wherein the processor is coupled to the process tool and isfurther configured to alter a parameter of one or more instrumentscoupled to the process tool in response to at least one of thedetermined properties using an in situ control technique during use.1842. The system of claim 1793, wherein a process tool comprises a firstprocess chamber and a second process chamber, and wherein the stage isfurther configured to move the specimen from the first process chamberto the second process chamber during use.
 1843. The system of claim1842, wherein the system is further configured to determine at least thetwo properties of the specimen as the stage is moving the specimen fromthe first process chamber to the second process chamber.
 1844. Thesystem of claim 1793, wherein the processor is further configured tocompare at least one of the determined properties of the specimen andproperties of a plurality of specimens during use.
 1845. The system ofclaim 1793, wherein the processor is further configured to compare atleast one of the determined properties of the specimen to apredetermined range for the property during use.
 1846. The system ofclaim 1845, wherein the processor is further configured to generate anoutput signal if at least one of the determined properties of thespecimen is outside of the predetermined range for the property duringuse.
 1847. The system of claim 1793, wherein the processor is furtherconfigured to alter a sampling frequency of the measurement device inresponse to at least one of the determined properties of the specimenduring use.
 1848. The system of claim 1793, wherein the processor isfurther configured to alter a parameter of one or more instrumentscoupled to the measurement device in response to at least one of thedetermined properties using a feedback control technique during use.1849. The system of claim 1793, wherein the processor is furtherconfigured to alter a parameter of one or more instruments coupled tothe measurement device in response to at least one of the determinedproperties using a feedforward control technique during use.
 1850. Thesystem of claim 1793, wherein the processor is further configured togenerate a database during use, and wherein the database comprises thedetermined first and second properties of the specimen.
 1851. The systemof claim 1850, wherein the processor is further configured to calibratethe measurement device using the database during use.
 1852. The systemof claim 1850, wherein the processor is further configured to monitorthe determined properties generated by measurement device using thedatabase during use.
 1853. The system of claim 1850, wherein thedatabase further comprises first and second properties of a plurality ofspecimens.
 1854. The system of claim 1853, wherein the first and secondproperties of the plurality of specimens are determined using themeasurement device.
 1855. The system of claim 1853, wherein the firstand second properties of the plurality of specimens are determined usinga plurality of measurement devices.
 1856. The system of claim 1855,wherein the processor is further coupled to the plurality of measurementdevices.
 1857. The system of claim 1856, wherein the processor isfurther configured to calibrate the plurality of measurement devicesusing the database during use.
 1858. The system of claim 1856, whereinthe processor is further configured to monitor output signals generatedby the plurality of measurement devices using the database during use.1859. The system of claim 1793, further comprising a stand alone systemcoupled to the system, wherein the stand alone system is configured tobe calibrated with a calibration standard during use, and wherein thestand alone system is further configured to calibrate the system duringuse.
 1860. The system of claim 1793, further comprising a stand alonesystem coupled the system and at least one additional system, whereinthe stand alone system is configured to be calibrated with a calibrationstandard during use, and wherein the stand alone system is furtherconfigured to calibrate the system and at least the one additionalsystem during use.
 1861. The system of claim 1793, wherein the system isfurther configured to determine at least the two properties of thespecimen at more than one position on the specimen, wherein the specimencomprises a wafer, and wherein the processor is configured to alter atleast one parameter of one or more instruments coupled to a process toolin response to at least one of the determined properties of the specimenat the more than one position on the specimen to reduce within wafervariation of at least one of the determined properties.
 1862. The systemof claim 1793, wherein the processor is further coupled to a processtool, and wherein the processor is further configured to alter aparameter of one or more instruments coupled to the process tool inresponse to at least one of the determined properties using a feedbackcontrol technique during use.
 1863. The system of claim 1793, whereinthe processor is further coupled to a process tool, and wherein theprocessor is further configured to alter a parameter of one or moreinstruments coupled to the process tool in response to at least one ofthe determined properties using a feedforward control technique duringuse.
 1864. The system of claim 1793, wherein the processor is furthercoupled to a process tool, and wherein the processor is furtherconfigured to monitor a parameter of one or more instruments coupled tothe process tool during use.
 1865. The system of claim 1864, wherein theprocessor is further configured to determine a relationship between atleast one of the determined properties and at least one of the monitoredparameters during use.
 1866. The system of claim 1864, wherein theprocessor is further configured to alter a parameter of at least one ofthe instruments in response to the relationship during use.
 1867. Thesystem of claim 1793, wherein the processor is further coupled to aplurality of measurement devices, and wherein at least one of theplurality of measurement devices is coupled to at least one of aplurality of process tools.
 1868. The system of claim 1793, wherein theillumination system and the detection system comprise non-opticalcomponents, and wherein the detected energy is responsive to anon-optical characteristic of the surface of the specimen.
 1869. Thesystem of claim 1793, wherein the processor comprises a local processorcoupled to the measurement device and a remote controller computercoupled to the local processor, wherein the local processor isconfigured to at least partially process the one or more output signalsduring use, and wherein the remote controller computer is configured tofurther process the at least partially processed one or more outputsignals during use.
 1870. The system of claim 1869, wherein the localprocessor is further configured to determine the first property and thesecond property of the specimen during use.
 1871. The system of claim1869, wherein the remote controller computer is further configured todetermine the first property and the second property of the specimenduring use.
 1872. A method for determining at least two properties of aspecimen, comprising: disposing the specimen upon a stage, wherein thestage is coupled to a measurement device, and wherein the measurementdevice comprises an illumination system and a detection system;directing energy toward a surface of the specimen using the illuminationsystem; detecting energy propagating from the surface of the specimenusing the detection system; generating one or more output signalsresponsive to the detected energy; and processing the one or more outputsignals to determine a first property and a second property of thespecimen, wherein the first property comprises a presence of macrodefects on the specimen, and wherein the second property comprises apresence of micro defects on the specimen.
 1873. The method of claim1872, further comprising laterally moving the stage during saiddirecting energy and said detecting energy.
 1874. The method of claim1872, further comprising rotatably moving the stage during saiddirecting energy and said detecting energy.
 1875. The method of claim1872, further comprising laterally and rotatably moving the stage duringsaid directing energy and said detecting energy.
 1876. The method ofclaim 1872, wherein the illumination system comprises a single energysource.
 1877. The method of claim 1872, wherein the illumination systemcomprises more than one energy source.
 1878. The method of claim 1872,wherein the detection system comprises a single energy sensitive device.1879. The method of claim 1872, wherein the detection system comprisesmore than one energy sensitive devices.
 1880. The method of claim 1872,wherein detecting light comprises detecting dark field light propagatingalong a dark field path from the surface of the specimen.
 1881. Themethod of claim 1872, wherein the measurement device further comprises anon-imaging scatterometer.
 1882. The method of claim 1872, wherein themeasurement device further comprises a scatterometer.
 1883. The methodof claim 1872, wherein the measurement device further comprises aspectroscopic scatterometer.
 1884. The method of claim 1872, wherein themeasurement device further comprises a reflectometer.
 1885. The methodof claim 1872, wherein the measurement device further comprises aspectroscopic reflectometer.
 1886. The method of claim 1872, wherein themeasurement device further comprises an ellipsometer.
 1887. The methodof claim 1872, wherein the measurement device further comprises aspectroscopic ellipsometer.
 1888. The method of claim 1872, wherein themeasurement device further comprises a bright field imaging device.1889. The method of claim 1872, wherein the measurement device furthercomprises a dark field imaging device.
 1890. The method of claim 1872,wherein the measurement device further comprises a bright field and darkfield imaging device.
 1891. The method of claim 1872, wherein themeasurement device further comprises a non-imaging bright field device.1892. The method of claim 1872, wherein the measurement device furthercomprises a non-imaging dark field device.
 1893. The method of claim1872, wherein the measurement device further comprises a non-imagingbright field and dark field device.
 1894. The method of claim 1872,wherein the measurement device further comprises a double dark fielddevice.
 1895. The method of claim 1872, wherein the measurement devicefurther comprises at least a first measurement device and a secondmeasurement device, and wherein the first and second measurement devicesare selected from the group consisting of a non-imaging scatterometer, ascatterometer, a spectroscopic scatterometer, a reflectometer, aspectroscopic reflectometer, an ellipsometer, a spectroscopicellipsometer, a bright field imaging device, a dark field imagingdevice, a bright field and dark field imaging device, a non-imagingbright field device, a non-imaging dark field device, a non-imagingbright field and dark field device, a double dark field device, an X-rayreflectometer, an X-ray fluorescence device, an optical fluorescencedevice, an eddy current imaging device, and a relatively large spote-beam device.
 1896. The method of claim 1872, wherein the measurementdevice further comprises at least a first measurement device and asecond measurement device, and wherein optical elements of the firstmeasurement device comprise optical elements of the second measurementdevice.
 1897. The method of claim 1872, further comprising: directingenergy toward a bottom surface of the specimen; and detecting energypropagating from the bottom surface of the specimen, wherein the firstproperty further comprises a presence of macro defects on the bottomsurface of the specimen.
 1898. The method of claim 1872, furthercomprising processing the one or more output signals to determine athickness of a copper film, and wherein the macro defects or the microdefects comprise voids in the copper film.
 1899. The method of claim1872, wherein the macro defects comprise copper contamination on a backside of the specimen.
 1900. The method of claim 1872, further comprisingprocessing the one or more output signals to determine a third propertyof the specimen, wherein the third property is selected from the groupconsisting of a roughness of the specimen, a roughness of a layer on thespecimen, and a roughness of a feature of the specimen.
 1901. The methodof claim 1900, wherein the stage and the measurement device are coupledto a process tool selected from the group consisting of a lithographytool, an atomic layer deposition tool, a cleaning tool, and an etchtool.
 1902. The method of claim 1872, wherein processing the one or moreoutput signals to determine the first and second properties of thespecimen comprises substantially simultaneously determining the firstand second properties of the specimen.
 1903. The method of claim 1872,further comprising directing energy toward multiple locations on thesurface of the specimen substantially simultaneously and detectingenergy propagating from the multiple locations substantiallysimultaneously such that one or more of the at least two properties ofthe specimen can be determined at the multiple locations substantiallysimultaneously.
 1904. The method of claim 1872, wherein the stage andthe measurement device are coupled to a process tool.
 1905. The methodof claim 1872, wherein the stage and the measurement device are coupledto a process tool, and wherein the stage and the measurement device arearranged laterally proximate to the process tool.
 1906. The method ofclaim 1872, wherein the stage and the measurement device are coupled toa process tool, and wherein the stage and the measurement device aredisposed within the process tool.
 1907. The method of claim 1872,wherein the stage and the measurement device are coupled to a processtool, and wherein the process tool is selected from the group consistingof a lithography tool, an etch tool, an ion implanter, achemical-mechanical polishing tool, a deposition tool, a thermal tool, acleaning tool, and a plating tool.
 1908. The method of claim 1872,wherein the stage and the measurement device are coupled to a processtool, wherein the process tool comprises a wafer handler, and whereindisposing the specimen upon the stage comprises moving the specimen fromthe process tool to the stage using the wafer handler.
 1909. The methodof claim 1872, wherein the stage and the measurement device are coupledto a process tool, the method further comprising moving the specimen tothe process tool subsequent to said directing and said detecting usingthe stage.
 1910. The method of claim 1872, wherein the stage and themeasurement device are coupled to a process tool, the method furthercomprising determining at least the two properties of the specimen whilethe specimen is waiting between process steps.
 1911. The method of claim1872, wherein the stage and the measurement device are coupled to aprocess tool, wherein the process tool comprises a support deviceconfigured to support the specimen during a process step, and wherein anupper surface of the support device is substantially parallel to anupper surface of the stage.
 1912. The method of claim 1872, wherein thestage and the measurement device are coupled to a process tool, whereinthe process tool comprises a support device configured to support thespecimen during a process step, and wherein an upper surface of thestage is angled with respect to an upper surface of the support device.1913. The method of claim 1872, wherein the stage and the measurementdevice are disposed within a measurement chamber, and wherein themeasurement chamber is coupled to a process tool.
 1914. The method ofclaim 1872, wherein the stage and the measurement device are disposedwithin a measurement chamber, and wherein the measurement chamber isdisposed within a process tool.
 1915. The method of claim 1872, whereinthe stage and the measurement device are disposed within a measurementchamber, and wherein the measurement chamber is arranged laterallyproximate to a process chamber of a process tool.
 1916. The method ofclaim 1872, wherein the stage and the measurement device are disposedwithin a measurement chamber, and wherein the measurement chamber isarranged vertically proximate to a process chamber of a process tool.1917. The method of claim 1872, wherein disposing the specimen upon thestage comprises disposing the specimen upon a support device disposedwithin a process chamber of a process tool, and wherein the supportdevice is configured to support the specimen during a process step.1918. The method of claim 1917, further comprising performing saiddirecting and said detecting during the process step.
 1919. The methodof claim 1917, further comprising obtaining a signature characterizingthe process step, wherein the signature comprises at least onesingularity representative of an end of the process step.
 1920. Themethod of claim 1917, further comprising altering a parameter of one ormore instruments coupled to the process tool in response to at least oneof the determined properties using an in situ control technique. 1921.The method of claim 1872, further comprising moving the specimen from afirst process chamber to a second process chamber using the stage,wherein the first process chamber and the second process chamber aredisposed within a process tool.
 1922. The method of claim 1921, furthercomprising performing said directing and said detecting during saidmoving the specimen from the first process chamber to the second processchamber.
 1923. The method of claim 1872, further comprising comparing atleast one of the determined properties of the specimen and determinedproperties of a plurality of specimens.
 1924. The method of claim 1872,further comprising comparing at least one of the determined propertiesof the specimen to a predetermined range for the property.
 1925. Themethod of claim 1924, further comprising generating an output signal ifat least one of the determined properties of the specimen is outside ofthe predetermined range for the property.
 1926. The method of claim1872, further comprising altering a sampling frequency of themeasurement device in response to at least one of the determinedproperties of the specimen.
 1927. The method of claim 1872, furthercomprising altering a parameter of one or more instruments coupled tothe measurement device in response to at least one of the determinedproperties using a feedback control technique.
 1928. The method of claim1872, further comprising altering a parameter of one or more instrumentscoupled to the measurement device in response to at least one of thedetermined properties using a feedforward control technique.
 1929. Themethod of claim 1872, further comprising generating a database, whereinthe database comprises the determined first and second properties of thespecimen.
 1930. The method of claim 1929, further comprising calibratingthe measurement device using the database.
 1931. The method of claim1929, further comprising monitoring output signals generated by themeasurement device using the database.
 1932. The method of claim 1929,wherein the database further comprises first and second properties of aplurality of specimens.
 1933. The method of claim 1932, wherein thefirst and second properties of the plurality of specimens are generatedusing a plurality of measurement devices.
 1934. The method of claim1933, further comprising calibrating the plurality of measurementdevices using the database.
 1935. The method of claim 1933, furthercomprising monitoring output signals generated by the plurality ofmeasurement devices using the database.
 1936. The method of claim 1872,wherein a stand alone system is coupled to the measurement device, themethod further comprising calibrating the stand alone system with acalibration standard and calibrating the measurement device with thestand alone system.
 1937. The method of claim 1872, wherein a standalone system is coupled to the measurement device and at least oneadditional measurement device, the method further comprising calibratingthe stand alone system with a calibration standard and calibrating themeasurement device an at least the one additional measurement devicewith the stand alone system.
 1938. The method of claim 1872, furthercomprising determining at least the two properties of the specimen atmore than one position on the specimen, wherein the specimen comprises awafer, the method further comprising altering at least one parameter ofone or more instruments coupled to a process tool in response to atleast one of the determined properties of the specimen at the more thanone position on the specimen to reduce within wafer variation of atleast one of the determined properties.
 1939. The method of claim 1872,further comprising altering a parameter of one or more instrumentscoupled to a process tool in response to at least one of the determinedproperties of the specimen using a feedback control technique.
 1940. Themethod of claim 1872, further comprising altering a parameter of one ormore instruments coupled to a process tool in response to at least oneof the determined properties of the specimen using a feedforward controltechnique.
 1941. The method of claim 1872, further comprising monitoringa parameter of one or more instruments coupled to the process tool.1942. The method of claim 1941, further comprising determining arelationship between at least one of the determined properties and atleast one of the monitored parameters.
 1943. The method of claim 1942,further comprising altering a parameter of at least one of theinstruments in response to the relationship.
 1944. The method of claim1872, further comprising altering a parameter of one or more instrumentscoupled to a plurality of process tools in response to at least one ofthe determined properties of the specimen.
 1945. The method of claim1872, wherein the measurement device comprises nonoptical components,and wherein detecting energy comprises measuring a non-opticalcharacteristic of the surface of the specimen.
 1946. The method of claim1872, wherein processing the one or more output signals comprises: atleast partially processing the one or more output signals using a localprocessor, wherein the local processor is coupled to the measurementdevice; sending the partially processed one or more output signals fromthe local processor to a remote controller computer; and furtherprocessing the partially processed one or more output signals using theremote controller computer.
 1947. The method of claim 1946, wherein atleast partially processing the one or more output signals comprisesdetermining the first and second properties of the specimen.
 1948. Themethod of claim 1946, wherein further processing the partially processedone or more output signals comprises determining the first and secondproperties of the specimen.
 1949. A computer-implemented method forcontrolling a system configured to determine at least two properties ofa specimen during use, wherein the system comprises a measurementdevice, comprising: controlling the measurement device, wherein themeasurement device comprises an illumination system and a detectionsystem, and wherein the measurement device is coupled to a stage,comprising: controlling the illumination system to direct energy towarda surface of the specimen; controlling the detection system to detectenergy propagating from the surface of the specimen; and generating oneor more output signals responsive to the detected energy; and processingthe one or more output signals to determine a first property and asecond property of the specimen, wherein the first property comprises apresence of macro defects on the specimen, and wherein the secondproperty comprises a presence of micro defects on the specimen. 1950.The method of claim 1949, further comprising controlling the stage,wherein the stage is configured to support the specimen.
 1951. Themethod of claim 1949, further comprising controlling the stage tolaterally move the stage during said directing energy and said detectingenergy.
 1952. The method of claim 1949, further comprising controllingthe stage to rotatably move the stage during said directing energy andsaid detecting energy.
 1953. The method of claim 1949, furthercomprising controlling the stage to laterally and rotatably move thestage during said directing energy and said detecting energy.
 1954. Themethod of claim 1949, wherein the illumination system comprises a singleenergy source.
 1955. The method of claim 1949, wherein the illuminationsystem comprises more than one energy source.
 1956. The method of claim1949, wherein the detection system comprises a single energy sensitivedevice.
 1957. The method of claim 1949, wherein the detection systemcomprises more than one energy sensitive devices.
 1958. The method ofclaim 1949, wherein the measurement device further comprises anon-imaging scatterometer.
 1959. The method of claim 1949, wherein themeasurement device further comprises a scatterometer.
 1960. The methodof claim 1949, wherein the measurement device further comprises aspectroscopic scatterometer.
 1961. The method of claim 1949, wherein themeasurement device further comprises a reflectometer.
 1962. The methodof claim 1949, wherein the measurement device further comprises aspectroscopic reflectometer
 1963. The method of claim 1949, wherein themeasurement device further comprises an ellipsometer.
 1964. The methodof claim 1949, wherein the measurement device further comprises aspectroscopic ellipsometer.
 1965. The method of claim 1949, wherein themeasurement device further comprises a bright field imaging device.1966. The method of claim 1949, wherein the measurement device furthercomprises a dark field imaging device.
 1967. The method of claim 1949,wherein the measurement device further comprises a bright field and darkfield imaging device.
 1968. The method of claim 1949, wherein themeasurement device further comprises a non-imaging bright field device.1969. The method of claim 1949, wherein the measurement device furthercomprises a non-imaging dark field device.
 1970. The method of claim1949, wherein the measurement device further comprises a non-imagingbright field and dark field device.
 1971. The method of claim 1949,wherein the measurement device further comprises a double dark fielddevice.
 1972. The method of claim 1949, wherein the measurement devicefurther comprises at least a first measurement device and a secondmeasurement device, and wherein the first and second measurement devicesare selected from the group consisting of a non-imaging scatterometer, ascatterometer, a spectroscopic scatterometer, a reflectometer, aspectroscopic reflectometer, an ellipsometer, a spectroscopicellipsometer, a bright field imaging device, a dark field imagingdevice, a bright field and dark field imaging device, a non-imagingbright field device, a non-imaging dark field device, a non-imagingbright field and dark field device, a double dark field device, an X-rayreflectometer, an X-ray fluorescence device, an optical fluorescencedevice, an eddy current imaging device, and a relatively large spote-beam device.
 1973. The method of claim 1949, wherein the measurementdevice further comprises at least a first measurement device and asecond measurement device, and wherein optical elements of the firstmeasurement device comprise optical elements of the second measurementdevice.
 1974. The method of claim 1949, further comprising: controllingthe illumination system to direct energy toward a bottom surface of thespecimen; and controlling the detection system to detect energypropagating from the bottom surface of the specimen, wherein the firstproperty comprises a presence of defects on the bottom surface of thespecimen.
 1975. The method of claim 1949, further comprising processingthe one or more output signals to determine a thickness of a copperfilm, and wherein the macro defects or the micro defects comprise voidsin the copper film.
 1976. The method of claim 1949, wherein the macrodefects comprise copper contamination on a back side of the specimen.1977. The method of claim 1949, further comprising processing the one ormore output signals to determine a third property of the specimen,wherein the third property is selected from the group consisting of aroughness of the specimen, a roughness of a layer on the specimen, and aroughness of a feature of the specimen.
 1978. The method of claim 1977,wherein the stage and the measurement device are coupled to a processtool selected from the group consisting of a lithography tool, an atomiclayer deposition tool, a cleaning tool, and an etch tool.
 1979. Themethod of claim 1949, wherein processing the one or more output signalsto determine the first and second properties of the specimen comprisessubstantially simultaneously determining the first and second propertiesof the specimen.
 1980. The method of claim 1949, further comprisingcontrolling the illumination system to direct energy toward multiplelocations on the surface of the specimen substantially simultaneouslyand controlling the detection system to detect energy propagating fromthe multiple locations substantially simultaneously such that one ormore of the at least two properties of the specimen can be determined atthe multiple locations substantially simultaneously.
 1981. The method ofclaim 1949, wherein the stage and the measurement device are coupled toa process tool.
 1982. The method of claim 1949, wherein the stage andthe measurement device are coupled to a process tool, and wherein thestage and the measurement device are arranged laterally proximate to theprocess tool.
 1983. The method of claim 1949, wherein the stage and themeasurement device are coupled to a process tool, and wherein the stageand the measurement device are disposed within the process tool. 1984.The method of claim 1949, wherein the stage and the measurement deviceare coupled to a process tool, and wherein the process tool is selectedfrom the group consisting of a lithography tool, an etch tool, an ionimplanter, a chemical-mechanical polishing tool, a deposition tool, athermal tool, a cleaning tool, and a plating tool.
 1985. The method ofclaim 1949, wherein the stage and the measurement device are coupled toa process tool, the method further comprising controlling a waferhandler to move the specimen from the process tool to the stage, andwherein the wafer handler is coupled to the process tool.
 1986. Themethod of claim 1949, wherein the stage and the measurement device arecoupled to a process tool, the method further comprising controlling thestage to move the specimen from the system to the process tool. 1987.The method of claim 1949, wherein the stage and the measurement deviceare coupled to a process tool, the method further comprising controllinga wafer handler to move the specimen from the process tool to the stagesuch that at least the two properties of the specimen can be determinedwhile the specimen is waiting between process steps.
 1988. The method ofclaim 1949, wherein the stage and the measurement device are coupled toa process tool, wherein the process tool comprises a support deviceconfigured to support the specimen during a process step, and wherein anupper surface of the support device is substantially parallel to anupper surface of the stage.
 1989. The method of claim 1949, wherein thestage and the measurement device are coupled to a process tool, whereinthe process tool comprises a support device configured to support thespecimen during a process step, and wherein an upper surface of thestage is angled with respect to an upper surface of the support device.1990. The method of claim 1949, wherein the stage and the measurementdevice are disposed within a measurement chamber, and wherein themeasurement chamber is coupled to a process tool.
 1991. The method ofclaim 1949, wherein the stage and the measurement device are disposedwithin a measurement chamber, and wherein the measurement chamber isdisposed within a process tool.
 1992. The method of claim 1949, whereinthe stage and the measurement device are disposed within a measurementchamber, and wherein the measurement chamber is arranged laterallyproximate to a process chamber of a process tool.
 1993. The method ofclaim 1949, wherein the stage and the measurement device are disposedwithin a measurement chamber, and wherein the measurement chamber isarranged vertically proximate to a process chamber of s process tool.1994. The method of claim 1949, further comprising disposing thespecimen upon a support device disposed within a process chamber of aprocess tool, and wherein the support device is configured to supportthe specimen during a process step.
 1995. The method of claim 1994,further comprising controlling the illumination system and controllingthe detection system during the process step.
 1996. The method of claim1995, further comprising controlling the system to obtain a signaturecharacterizing the process step, wherein the signature comprises atleast one singularity representative of an end of the process step.1997. The method of claim 1995, further comprising controlling thesystem to alter a parameter of one or more instruments coupled to theprocess tool in response to at least one of the determined propertiesusing an in situ control technique.
 1998. The method of claim 1949,further comprising controlling the stage to move the specimen from afirst process chamber to a second process chamber, wherein the firstprocess chamber and the second process chamber are disposed within aprocess tool.
 1999. The method of claim 1998, further comprisingcontrolling the illumination system and controlling the detection systemduring said moving the specimen from the first process chamber to thesecond process chamber.
 2000. The method of claim 1949, furthercomprising comparing at least one of the determined properties of thespecimen and determined properties of a plurality of specimens. 2001.The method of claim 1949, further comprising comparing at least one ofthe determined properties of the specimen to a predetermined range forthe property.
 2002. The method of claim 2001, further comprisinggenerating an output signal if at least one of the determined propertiesof the specimen is outside of the predetermined range for the property.2003. The method of claim 1949, further comprising altering a samplingfrequency of the measurement device in response to at least one of thedetermined properties.
 2004. The method of claim 1949, furthercomprising altering a parameter of one or more instruments coupled tothe measurement device in response to at least one of the determinedproperties using a feedback control technique.
 2005. The method of claim1949, further comprising altering a parameter of one or more instrumentscoupled to the measurement device in response to at least one of thedetermined properties using a feedforward control technique.
 2006. Themethod of claim 1949, further comprising generating a database, whereinthe database comprises the determined first and second properties of thespecimen, the method further comprising calibrating the measurementdevice using the database.
 2007. The method of claim 1949, furthercomprising generating a database, wherein the database comprises thedetermined first and second properties of the specimen, the methodfurther comprising monitoring output signals generated by themeasurement device using the database.
 2008. The method of claim 1949,further comprising generating a database, wherein the database comprisesthe determined first and second properties of the specimen, and whereinthe database further comprises first and second properties of aplurality of specimens.
 2009. The method of claim 1949, furthercomprising generating a database, wherein the database comprises thedetermined first and second properties of the specimen, and wherein thedatabase further comprises first and second properties of a plurality ofspecimens generated using a plurality of measurement devices.
 2010. Themethod of claim 2009, further comprising calibrating the plurality ofmeasurement devices using the database.
 2011. The method of claim 2009,further comprising monitoring output signals generated by the pluralityof measurement devices using the database.
 2012. The method of claim1949, wherein a stand alone system is coupled to the system, the methodfurther comprising controlling the stand alone system to calibrate thestand alone system with a calibration standard and further controllingthe stand alone system to calibrate the system.
 2013. The method ofclaim 1949, wherein a stand alone system is coupled to the system and atleast one additional system, the method further comprising controllingthe stand alone system to calibrate the stand alone system with acalibration standard and further controlling the stand alone system tocalibrate the system and at least the one additional system.
 2014. Themethod of claim 1949, wherein the system is further configured todetermine at least the two properties of the specimen at more than oneposition on the specimen, and wherein the specimen comprises a wafer,the method further comprising altering at least one parameter of one ormore instruments coupled to a process tool in response to at least oneof the determined properties of the specimen at the more than oneposition on the specimen to reduce within wafer variation of at leastone of the determined properties.
 2015. The method of claim 1949,further comprising altering a parameter of one or more instrumentscoupled to a process tool in response to at least one of the determinedproperties of the specimen using a feedback control technique.
 2016. Themethod of claim 1949, further comprising altering a parameter of one ormore instruments coupled to a process tool in response to at least oneof the determined properties of the specimen using a feedforward controltechnique.
 2017. The method of claim 1949, further comprising monitoringa parameter of one or more instruments coupled to a process tool. 2018.The method of claim 1949, further comprising monitoring a parameter ofone or more instruments coupled to a process tool and determining arelationship between at least one of the determined properties and atleast one of the monitored parameters.
 2019. The method of claim 1949,further comprising monitoring a parameter of one or more instrumentscoupled to a process tool, determining a relationship between at leastone of the determined properties and at least one of the monitoredparameters, and altering a parameter of at least one of the instrumentsin response to the relationship.
 2020. The method of claim 1949, furthercomprising altering a parameter of one or more instruments coupled to aplurality of process tools in response to at least one of the determinedproperties of the specimen.
 2021. The method of claim 1949, wherein themeasurement device comprises nonoptical components, and whereincontrolling the detection system to detect energy comprises controllingthe non-optical components to measure a non-optical characteristic ofthe surface of the specimen.
 2022. The method of claim 1949, whereinprocessing the one or more output signals comprises: at least partiallyprocessing the one or more output signals using a local processor,wherein the local processor is coupled to the measurement device;sending the partially processed one or more output signals from thelocal processor to a remote controller computer; and further processingthe partially processed one or more output signals using the remotecontroller computer.
 2023. The method of claim 2022, wherein at leastpartially processing the one or more output signals comprisesdetermining the first and second properties of the specimen.
 2024. Themethod of claim 2022, wherein further processing the partially processedone or more output signals comprises determining the first and secondproperties of the specimen.
 2025. A semiconductor device fabricated by amethod, the method comprising: forming a portion of the semiconductordevice upon a specimen; disposing the specimen upon a stage, wherein thestage is coupled to a measurement device, and wherein the measurementdevice comprises an illumination system and a detection system;directing energy toward a surface of the specimen using the illuminationsystem; detecting energy propagating from the surface of the specimenusing the detection system; generating one or more output signals inresponse to the detected energy; and processing the one or more outputsignals to determine a first property and a second property of thespecimen, wherein the first property comprises a presence of macrodefects on the specimen, and wherein the second property comprises apresence of micro defects on the specimen.
 2026. The device of claim2025, wherein the illumination system comprises a single energy source.2027. The device of claim 2025, wherein the illumination systemcomprises more than one energy source.
 2028. The device of claim 2025,wherein the detection system comprises a single energy sensitive device.2029. The device of claim 2025, wherein the detection system comprisesmore than one energy sensitive devices.
 2030. The device of claim 2025,wherein the measurement device is selected from the group consisting ofa non-imaging scatterometer, a scatterometer, a spectroscopicscatterometer, a reflectometer, a spectroscopic reflectometer, anellipsometer, a spectroscopic ellipsometer, a bright field imagingdevice, a dark field imaging device, a bright field and dark fieldimaging device, a non-imaging bright field device, a non-imaging darkfield device, a non-imaging bright field and dark field device, a doubledark field device, an X-ray reflectometer, an X-ray fluorescence device,an optical fluorescence device, an eddy current imaging device, and arelatively large spot e-beam device.
 2031. The device of claim 2025,wherein the measurement device further comprises at least a firstmeasurement device and a second measurement device, and wherein thefirst and second measurement devices are selected from the groupconsisting of a non-imaging scatterometer, a scatterometer, aspectroscopic scatterometer, a reflectometer, a spectroscopicreflectometer, an ellipsometer, a spectroscopic ellipsometer, a brightfield imaging device, a dark field imaging device, a bright field anddark field imaging device, a non-imaging bright field device, anon-imaging dark field device, a non-imaging bright field and dark fielddevice, a double dark field device, an X-ray reflectometer, an X-rayfluorescence device, an optical fluorescence device, an eddy currentimaging device, and a relatively large spot e-beam device.
 2032. Thedevice of claim 2025, wherein the measurement device further comprisesat least a first measurement device and a second measurement device, andwherein optical elements of the first measurement device compriseoptical elements of the second measurement device.
 2033. The device ofclaim 2025, further comprising: directing energy toward a bottom surfaceof the specimen; and detecting energy propagating from the bottomsurface of the specimen, wherein the first property further comprises apresence of macro defects on the bottom surface of the specimen. 2034.The device of claim 2025, further comprising processing the one or moreoutput signals to determine a thickness of a copper film, and whereinthe macro defects or the micro defects comprise voids in the copperfilm.
 2035. The device of claim 2025, wherein the macro defects comprisecopper contamination on a back side of the specimen.
 2036. The device ofclaim 2025, further comprising processing the one or more output signalsto determine a third property of the specimen, wherein the thirdproperty is selected from the group consisting of a roughness of thespecimen, a roughness of a layer on the specimen, and a roughness of afeature of the specimen.
 2037. The device of claim 2036, wherein thestage and the measurement device are coupled to a process tool selectedfrom the group consisting of a lithography tool, an atomic layerdeposition tool, a cleaning tool, and an etch tool.
 2038. The device ofclaim 2025, wherein the stage and the measurement device are coupled toa process tool.
 2039. The device of claim 2025, wherein the stage andthe measurement device are coupled to a process tool, and wherein theprocess tool is selected from the group consisting of a lithographytool, an etch tool, an ion implanter, a chemical-mechanical polishingtool, a deposition tool, a thermal tool, a cleaning tool, and a platingtool.
 2040. The device of claim 2025, wherein the measurement devicecomprises non-optical components, and wherein detecting energy comprisesmeasuring a non-optical characteristic of the surface of the specimen.2041. A method for fabricating a semiconductor device, comprising:forming a portion of the semiconductor device upon a specimen; disposingthe specimen upon a stage, wherein the stage is coupled to a measurementdevice, and wherein the measurement device comprises an illuminationsystem and a detection system; directing energy toward a surface of thespecimen using the illumination system; detecting energy propagatingfrom the surface of the specimen using the detection system; generatingone or more output signals responsive to the detected energy; andprocessing the one or more output signals to determine a first propertyand a second property of the specimen, wherein the first propertycomprises a presence of macro defects on the specimen, and wherein thesecond property comprises a presence of micro defects on the specimen.2042. The method of claim 2041, wherein the illumination systemcomprises a single energy source.
 2043. The method of claim 2041,wherein the illumination system comprises more than one energy source.2044. The method of claim 2041, wherein the detection system comprises asingle energy sensitive device.
 2045. The method of claim 2041, whereinthe detection system comprises more than one energy sensitive devices.2046. The method of claim 2041, wherein the measurement device isselected from the group consisting of a non-imaging scatterometer, ascatterometer, a spectroscopic scatterometer, a reflectometer, aspectroscopic reflectometer, an ellipsometer, a spectroscopicellipsometer, a bright field imaging device, a dark field imagingdevice, a bright field and dark field imaging device, a non-imagingbright field device, a non-imaging dark field device, a non-imagingbright field and dark field device, a double dark field device, an X-rayreflectometer, an X-ray fluorescence device, an optical fluorescencedevice, an eddy current imaging device, and a relatively large spote-beam device.
 2047. The method of claim 2041, wherein the measurementdevice further comprises at least a first measurement device and asecond measurement device, and wherein the first and second measurementdevices are selected from the group consisting of a non-imagingscatterometer, a scatterometer, a spectroscopic scatterometer, areflectometer, a spectroscopic reflectometer, an ellipsometer, aspectroscopic ellipsometer, a bright field imaging device, a dark fieldimaging device, a bright field and dark field imaging device, anon-imaging bright field device, a non-imaging dark field device, anon-imaging bright field and dark field device, a double dark fielddevice, an X-ray reflectometer, an X-ray fluorescence device, an opticalfluorescence device, an eddy current imaging device, and a relativelylarge spot e-beam device.
 2048. The method of claim 2041, wherein themeasurement device further comprises at least a first measurement deviceand a second measurement device, and wherein optical elements of thefirst measurement device comprise optical elements of the secondmeasurement device.
 2049. The method of claim 2041, further comprising:directing energy toward a bottom surface of the specimen; and detectingenergy propagating from the bottom surface of the specimen, wherein thefirst property further comprises a presence of macro defects on thebottom surface of the specimen.
 2050. The method of claim 2041, furthercomprising processing the one or more output signals to determine athickness of a copper film, and wherein the macro defects or the microdefects comprise voids in the copper film.
 2051. The method of claim2041, wherein the macro defects comprise copper contamination on a backside of the specimen.
 2052. The method of claim 2041, further comprisingprocessing the one or more output signals to determine a third propertyof the specimen, wherein the third property is selected from the groupconsisting of a roughness of the specimen, a roughness of a layer on thespecimen, and a roughness of a feature of the specimen.
 2053. The methodof claim 2052, wherein the stage and the measurement device are coupledto a process tool selected from the group consisting of a lithographytool, an atomic layer deposition tool, a cleaning tool, and an etchtool.
 2054. The method of claim 2041, wherein the stage and themeasurement device are coupled to a process tool.
 2055. The method ofclaim 2041, wherein the stage and the measurement device are coupled toa process tool, and wherein the process tool is selected from the groupconsisting of a lithography tool, an etch tool, an ion implanter, achemical-mechanical polishing tool, a deposition tool, a thermal tool, acleaning tool, and a plating tool.
 2056. The method of claim 2041,wherein the measurement device comprises nonoptical components, andwherein detecting energy comprises measuring a non-opticalcharacteristic of the surface of the specimen.
 2057. A system configuredto determine at least two properties of a specimen during use,comprising: a stage configured to support the specimen during use; ameasurement device coupled to the stage, comprising: an illuminationsystem configured to direct energy toward a surface of the specimenduring use; and a detection system coupled to the illumination systemand configured to detect energy propagating from the surface of thespecimen during use, wherein the measurement device is configured togenerate one or more output signals responsive to the detected energy; alocal processor coupled to the measurement device and configured to atleast partially process the one or more output signals during use; and aremote controller computer coupled to the local processor, wherein theremote controller computer is configured to receive the at leastpartially processed one or more output signals and to determine a firstproperty and a second property of the specimen from the at leastpartially processed one or more output signals during use, wherein thefirst property comprises a presence of macro defects on the specimen,and wherein the second property comprises a presence of micro defects onthe specimen.
 2058. The system of claim 2057, wherein the measurementdevice is selected from the group consisting of a non-imagingscatterometer, a scatterometer, a spectroscopic scatterometer, areflectometer, a spectroscopic reflectometer, an ellipsometer, aspectroscopic ellipsometer, a bright field imaging device, a dark fieldimaging device, a bright field and dark field imaging device, anon-imaging bright field device, a non-imaging dark field device, anon-imaging bright field and dark field device, a double dark fielddevice, an X-ray reflectometer, an X-ray fluorescence device, an opticalfluorescence device, an eddy current imaging device, and a relativelylarge spot e-beam device.
 2059. The system of claim 2057, wherein themeasurement device further comprises at least a first measurement deviceand a second measurement device, and wherein the first and secondmeasurement devices are selected from the group consisting of anon-imaging scatterometer, a scatterometer, a spectroscopicscatterometer, a reflectometer, a spectroscopic reflectometer, anellipsometer, a spectroscopic ellipsometer, a bright field imagingdevice, a dark field imaging device, a bright field and dark fieldimaging device, a non-imaging bright field device, a non-imaging darkfield device, a non-imaging bright field and dark field device, a doubledark field device, an X-ray reflectometer, an X-ray fluorescence device,an optical fluorescence device, an eddy current imaging device, and arelatively large spot e-beam device.
 2060. The system of claim 2057,wherein the measurement device further comprises at least a firstmeasurement device and a second measurement device, and wherein opticalelements of the first measurement device comprise optical elements ofthe second measurement device.
 2061. The system of claim 2057, whereinthe illumination system is further configured to direct energy toward abottom surface of the specimen during use, wherein the detection systemis further configured to detect energy propagating from the bottomsurface of the specimen during use, and wherein the first propertyfurther comprises a presence of macro defects on the bottom surface ofthe specimen.
 2062. The system of claim 2057, wherein the remotecontroller computer is configured to determine a third property from theat least partially processed one or more output signals during use,wherein the third property comprises a thickness of a copper film, andwherein the macro defects or the micro defects comprise voids in thecopper film.
 2063. The system of claim 2057, wherein the macro defectscomprise copper contamination on a back side of the specimen.
 2064. Thesystem of claim 2057, wherein the remote controller computer is furtherconfigured to determine a third property of the specimen from the atleast partially processed one or more output signals during use, andwherein the third property is selected from the group consisting of aroughness of the specimen, a roughness of a layer on the specimen, and aroughness of a feature of the specimen.
 2065. The system of claim 2064,wherein the system is coupled to a process tool selected from the groupconsisting of a lithography tool, an atomic layer deposition tool, acleaning tool, and an etch tool.
 2066. The system of claim 2057, whereinthe remote controller computer is coupled to a process tool.
 2067. Thesystem of claim 2057, wherein the remote controller computer is coupledto a process tool, and wherein the process tool is selected from thegroup consisting of a lithography tool, an etch tool, an ion implanter,a chemical-mechanical polishing tool, a deposition tool, a thermal tool,a cleaning tool, and a plating tool.
 2068. The system of claim 2057,wherein the remote controller computer is coupled to a process tool, andwherein the remote controller computer is further configured to alter aparameter of one or more instruments coupled to the process tool inresponse to at least one of the determined properties using a feedbackcontrol technique during use.
 2069. The system of claim 2057, whereinthe remote controller computer is coupled to a process tool, and whereinthe remote controller computer is further configured to alter aparameter of one or more instruments coupled to the process tool inresponse to at least one of the determined properties using afeedforward control technique during use.
 2070. The system of claim2057, wherein the remote controller computer is coupled to a processtool, and wherein the remote controller computer is further configuredto monitor a parameter of one or more instruments coupled to the processtool during use.
 2071. The system of claim 2070, wherein the remotecontroller computer is further configured to determine a relationshipbetween at least one of the determined properties and at least one ofthe monitored parameters during use.
 2072. The system of claim 2071,wherein the remote controller computer is further configured to alter aparameter of at least one of the instruments in response to therelationship during use.
 2073. The system of claim 2057, wherein theremote controller computer is coupled to a process tool, wherein theillumination system is further configured to direct energy toward thesurface of the specimen during a process step, wherein the detectionsystem is further configured to detect energy propagating from thesurface of the specimen during the process step, and wherein the remotecontroller computer is further configured to determine the first andsecond properties of the specimen during the process step.
 2074. Thesystem of claim 2073, wherein the remote controller computer is furtherconfigured to obtain a signature characterizing the process step duringuse, and wherein the signature comprises at least one singularityrepresentative of an end of the process step.
 2075. The system of claim2073, wherein the remote controller computer is further configured toalter a parameter of one or more instruments coupled to the process toolin response to at least one of the determined properties using an insitu control technique during use.
 2076. The system of claim 2057,wherein a process tool comprises a first process chamber and a secondprocess chamber, and wherein the stage is further configured to move thespecimen from the first process chamber to the second process chamberduring use.
 2077. The system of claim 2076, wherein the illuminationsystem is further configured to direct energy toward the surface of thespecimen during said moving, wherein the detection system is furtherconfigured to detect energy propagating from the surface of the specimenduring said moving, and wherein the remote controller computer isfurther configured to determine the first and second properties of thespecimen during said moving.
 2078. The system of claim 2057, wherein theremote controller computer is further configured to compare at least oneof the determined properties of the specimen and properties of aplurality of specimens during use.
 2079. The system of claim 2057,wherein the remote controller computer is further configured to compareat least one of the determined properties of the specimen to apredetermined range for the property during use.
 2080. The system ofclaim 2079, wherein the remote controller computer is further configuredto generate an output signal if at least one of the determinedproperties of the specimen is outside of the predetermined range for theproperty during use.
 2081. The system of claim 2057, wherein the remotecontroller computer is further configured to alter a sampling frequencyof the measurement device in response to at least one of the determinedproperties of the specimen during use.
 2082. The system of claim 2057,wherein the remote controller computer is further configured to alter aparameter of one or more instruments coupled to the measurement devicein response to at least one of the determined properties using afeedback control technique during use.
 2083. The system of claim 2057,wherein the remote controller computer is further configured to alter aparameter of one or more instruments coupled to the measurement devicein response to at least one of the determined properties using afeedforward control technique during use.
 2084. The system of claim2057, wherein the remote controller computer is further configured togenerate a database during use, wherein the database comprises thedetermined first and second properties of the specimen, and wherein theremote controller computer is further configured to calibrate themeasurement device using the database during use.
 2085. The system ofclaim 2057, wherein the remote controller computer is further configuredto generate a database during use, wherein the database comprises thedetermined first and second properties of the specimen, and wherein theremote controller computer is further configured to monitor outputsignals generated by measurement device using the database during use.2086. The system of claim 2057, wherein the remote controller computeris further configured to generate a database during use, wherein thedatabase comprises the determined first and second properties of thespecimen, and wherein the database further comprises first and secondproperties of a plurality of specimens.
 2087. The system of claim 2057,wherein the remote controller computer is further configured to generatea database during use, wherein the database comprises the determinedfirst and second properties of the specimen, and wherein the databasefurther comprises first and second properties of a plurality ofspecimens determined using a plurality of measurement devices.
 2088. Thesystem of claim 2087, wherein the remote controller computer is furthercoupled to the plurality of measurement devices, and wherein the remotecontroller computer is further configured to calibrate the plurality ofmeasurement devices using the database during use.
 2089. The system ofclaim 2087, wherein the remote controller computer is further coupled tothe plurality of measurement devices, and wherein the remote controllercomputer is further configured to monitor output signals generated bythe plurality of measurement devices using the database during use.2090. The system of claim 2057, wherein the remote controller computeris further coupled to a plurality of measurement devices, and whereineach of the plurality of measurement devices is coupled to at least oneof a plurality of process tools.
 2091. The system of claim 2057, whereinthe remote controller computer is further coupled to a plurality ofprocess tools, and wherein the remote controller computer is furtherconfigured to alter a parameter of one or more instruments coupled to atleast one of the plurality of process tools during use.
 2092. The systemof claim 2057, wherein the illumination system and the detection systemcomprise non-optical components, and wherein the detected energy isresponsive to a non-optical characteristic of the surface of thespecimen.
 2093. A method for determining at least two properties of aspecimen, comprising: disposing the specimen upon a stage, wherein thestage is coupled to a measurement device, and wherein the measurementdevice comprises an illumination system and a detection system;directing energy toward a surface of the specimen using the illuminationsystem; detecting energy propagating from the surface of the specimenusing the detection system; generating one or more output signalsresponsive to the detected energy; and processing the one or more outputsignals to determine a first property and a second property of thespecimen, wherein the first property comprises a presence of macrodefects on the specimen, and wherein the second property comprises apresence of micro defects on the specimen, comprising: at leastpartially processing the one or more output signals using a localprocessor, wherein the local processor is coupled to the measurementdevice; sending the partially processed one or more output signals fromthe local processor to a remote controller computer; and furtherprocessing the partially processed one or more output signals using theremote controller computer.
 2094. The method of claim 2093, wherein themeasurement device is selected from the group consisting of anon-imaging scatterometer, a scatterometer, a spectroscopicscatterometer, a reflectometer, a spectroscopic reflectometer, anellipsometer, a spectroscopic ellipsometer, a bright field imagingdevice, a dark field imaging device, a bright field and dark fieldimaging device, a non-imaging bright field device, a non-imaging darkfield device, a non-imaging bright field and dark field device, a doubledark field device, an X-ray reflectometer, an X-ray fluorescence device,an optical fluorescence device, an eddy current imaging device, and arelatively large spot e-beam device.
 2095. The method of claim 2093,wherein the measurement device further comprises at least a firstmeasurement device and a second measurement device, and wherein thefirst and second measurement devices are selected from the groupconsisting of a non-imaging scatterometer, a scatterometer, aspectroscopic scatterometer, a reflectometer, a spectroscopicreflectometer, an ellipsometer, a spectroscopic ellipsometer, a brightfield imaging device, a dark field imaging device, a bright field anddark field imaging device, a non-imaging bright field device, anon-imaging dark field device, a non-imaging bright field and dark fielddevice, a double dark field device, an X-ray reflectometer, an X-rayfluorescence device, an optical fluorescence device, an eddy currentimaging device, and a relatively large spot e-beam device.
 2096. Themethod of claim 2093, wherein the measurement device further comprisesat least a first measurement device and a second measurement device, andwherein optical elements of the first measurement device compriseoptical elements of the second measurement device.
 2097. The method ofclaim 2093, further comprising: directing energy toward a bottom surfaceof the specimen; and detecting energy propagating from the bottomsurface of the specimen, wherein the first property further comprises apresence of macro defects on the bottom surface of the specimen. 2098.The method of claim 2093, further comprising processing the one or moreoutput signals to determine a thickness of a copper film, and whereinthe macro defects or the micro defects comprise voids in the copperfilm.
 2099. The method of claim 2093, wherein the macro defects comprisecopper contamination on a back side of the specimen.
 2100. The method ofclaim 2093, further comprising processing the one or more output signalsto determine a third property of the specimen, wherein the thirdproperty is selected from the group consisting of a roughness of thespecimen, a roughness of a layer on the specimen, and a roughness of afeature of the specimen.
 2101. The method of claim 2100, wherein thestage and the measurement device are coupled to a process tool selectedfrom the group consisting of a lithography tool, an atomic layerdeposition tool, a cleaning tool, and an etch tool.
 2102. The method ofclaim 2093, wherein the remote controller computer is coupled to aprocess tool.
 2103. The method of claim 2093, wherein the remotecontroller computer is coupled to a process tool, and wherein theprocess tool is selected from the group consisting of a lithographytool, an etch tool, an ion implanter, a chemical-mechanical polishingtool, a deposition tool, a thermal tool, a cleaning tool, and a platingtool.
 2104. The method of claim 2093, wherein the remote controllercomputer is coupled to a process tool, the method further comprisingaltering a parameter of one or more instruments coupled to the processtool using the remote controller computer in response to at least one ofthe determined properties of the specimen using a feedback controltechnique.
 2105. The method of claim 2093, wherein the remote controllercomputer is coupled to a process tool, the method further comprisingaltering a parameter of one or more instruments coupled to the processtool using the remote controller computer in response to at least one ofthe determined properties of the specimen using a feedforward controltechnique.
 2106. The method of claim 2093, wherein the remote controllercomputer is coupled to a process tool, the method further comprisingmonitoring a parameter of one or more instruments coupled to the processtool using the remote controller computer.
 2107. The method of claim2093, wherein the remote controller computer is coupled to a processtool, the method further comprising monitoring a parameter of one ormore instruments coupled to the process tool using the remote controllercomputer and determining a relationship between at least one of thedetermined properties and at least one of the monitored parameters usingthe remote controller computer.
 2108. The method of claim 2093, whereinthe remote controller computer is coupled to a process tool, the methodfurther comprising monitoring a parameter of one or more instrumentscoupled to the process tool using the remote controller computer,determining a relationship between at least one of the determinedproperties and at least one of the monitored parameters using the remotecontroller computer, and altering a parameter of at least one of theinstruments in response to the relationship using the remote controllercomputer.
 2109. The method of claim 2093, wherein the illuminationsystem and the detection system are coupled to a process chamber of aprocess tool, the method further comprising performing said directingand said detecting during a process step.
 2110. The method of claim2109, further comprising obtaining a signature characterizing theprocess step using the remote controller computer, wherein the signaturecomprises at least one singularity representative of an end of theprocess step.
 2111. The method of claim 2109, further comprisingaltering a parameter of one or more instruments coupled to the processtool using the remote controller computer in response to at least one ofthe determined properties using an in situ control technique.
 2112. Themethod of claim 2093, further comprising: moving the specimen from afirst process chamber to a second process chamber using the stage; andperforming said directing and said detecting during said moving thespecimen.
 2113. The method of claim 2093, further comprising comparingat least one of the determined properties of the specimen and determinedproperties of a plurality of specimens using the remote controllercomputer.
 2114. The method of claim 2093, further comprising comparingat least one of the determined properties of the specimen to apredetermined range for the property using the remote controllercomputer.
 2115. The method of claim 2114, further comprising generatingan output signal using the remote controller computer if at least one ofthe determined properties of the specimen is outside of thepredetermined range for the property.
 2116. The method of claim 2093,wherein the remote controller computer is coupled to the measurementdevice.
 2117. The method of claim 2116, further comprising altering asampling frequency of the measurement device using the remote controllercomputer in response to at least one of the determined properties of thespecimen.
 2118. The method of claim 2116, further comprising altering aparameter of one or more instruments coupled to the measurement deviceusing the remote controller computer in response to at least one of thedetermined properties using a feedback control technique.
 2119. Themethod of claim 2116, further comprising altering a parameter of one ormore instruments coupled to the measurement device using the remotecontroller computer in response to at least one of the determinedproperties using a feedforward control technique.
 2120. The method ofclaim 2093, further comprising generating a database using the remotecontroller computer, wherein the database comprises the determined firstand second properties of the specimen.
 2121. The method of claim 2093,further comprising generating a database using the remote controllercomputer, wherein the database comprises the determined first and secondproperties of the specimen, the method further comprising calibratingthe measurement device using the remote controller computer and thedatabase.
 2122. The method of claim 2093, further comprising generatinga database using the remote controller computer, wherein the databasecomprises the determined first and second properties of the specimen,the method further comprising monitoring output signals generated by themeasurement device using the remote controller computer and thedatabase.
 2123. The method of claim 2093, further comprising generatinga database using the remote controller computer, wherein the databasecomprises the determined first and second properties of the specimen,and wherein the database further comprises first and second propertiesof a plurality of specimens.
 2124. The method of claim 2123, wherein thefirst and second properties of the plurality of specimens are generatedusing a plurality of measurement devices.
 2125. The method of claim2124, further comprising calibrating the plurality of measurementdevices using the remote controller computer and the database.
 2126. Themethod of claim 2124, further comprising monitoring output signalsgenerated by the plurality of measurement devices using the remotecontroller computer and the database.
 2127. The method of claim 2093,further comprising sending the at least partially processed one or moreoutput signals from a plurality of local processors to the remotecontroller computer, wherein each of the plurality of local processorsis coupled to a measurement device.
 2128. The method of claim 2127,further comprising altering a parameter of one or more instrumentscoupled to at least one of the plurality of measurement devices usingthe remote controller computer in response to at least one of thedetermined properties of the specimen.
 2129. The method of claim 2127,wherein at least one of the plurality of measurement devices is coupledto one of a plurality of process tools.
 2130. The method of claim 2129,further comprising altering a parameter of one or more instrumentscoupled to at least one of the plurality of process tools using theremote controller computer in response to at least one of the determinedproperties of the specimen.
 2131. The method of claim 2093, wherein themeasurement device comprises nonoptical components, and whereindetecting energy comprises measuring a non-optical characteristic of thesurface of the specimen.
 2132. A system configured to determine at leastthree properties of a specimen during use, comprising: a stageconfigured to support the specimen during use; a measurement devicecoupled to the stage, comprising: an illumination system configured todirect energy toward a surface of the specimen during use; and adetection system coupled to the illumination system and configured todetect energy propagating from the surface of the specimen during use,wherein the measurement device is configured to generate one or moreoutput signals responsive to the detected energy during use; and aprocessor coupled to the measurement device and configured to determinea first property, a second property, and a third property of thespecimen from the one or more output signals during use, wherein thefirst property comprises a flatness measurement of the specimen, whereinthe second property comprises a presence of defects on the specimen, andwherein the third property comprises a thin film characteristic of thespecimen.
 2133. The system of claim 2132, wherein the stage is furtherconfigured to move laterally during use.
 2134. The system of claim 2132,wherein the stage is further configured to move rotatably during use.2135. The system of claim 2132, wherein the stage is further configuredto move laterally and rotatably during use.
 2136. The system of claim2132, wherein the illumination system comprises a single energy source.2137. The system of claim 2132, wherein the illumination systemcomprises more than one energy source.
 2138. The system of claim 2132,wherein the detection system comprises a single energy sensitive device.2139. The system of claim 2132, wherein the detection system comprisesmore than one energy sensitive devices.
 2140. The system of claim 2132,wherein the measurement device further comprises an opticalprofilometer.
 2141. The system of claim 2132, wherein the measurementdevice further comprises an interferometer.
 2142. The system of claim2132, wherein the measurement device further comprises a spectroscopicreflectometer.
 2143. The system of claim 2132, wherein the measurementdevice further comprises a spectroscopic ellipsometer.
 2144. The systemof claim 2132, wherein the measurement device further comprises a dualbeam spectrophotometer.
 2145. The system of claim 2132, wherein themeasurement device further comprises a beam profile ellipsometer. 2146.The system of claim 2132, wherein the measurement device furthercomprises a non-imaging scatterometer.
 2147. The system of claim 2132,wherein the measurement device further comprises a scatterometer. 2148.The system of claim 2132, wherein the measurement device furthercomprises a spectroscopic scatterometer.
 2149. The system of claim 2132,wherein the measurement device further comprises a reflectometer. 2150.The system of claim 2132, wherein the measurement device furthercomprises an ellipsometer.
 2151. The system of claim 2132, wherein themeasurement device further comprises a bright field imaging device.2152. The system of claim 2132, wherein the measurement device furthercomprises a dark field imaging device.
 2153. The system of claim 2132,wherein the measurement device further comprises a bright field and darkfield imaging device.
 2154. The system of claim 2132, wherein themeasurement device further comprises a non-imaging bright field device.2155. The system of claim 2132, wherein the measurement device furthercomprises a non-imaging dark field device.
 2156. The system of claim2132, wherein the measurement device further comprises a non-imagingbright field and dark field device.
 2157. The system of claim 2132,wherein the measurement device further comprises a double dark fielddevice.
 2158. The system of claim 2132, wherein the measurement devicefurther comprises at least a first measurement device and a secondmeasurement device, and wherein the first and second measurement devicesare selected from the group consisting of an optical profilometer, aninterferometer, a spectroscopic reflectometer, a spectroscopicellipsometer, a dual beam spectrophotometer, a beam profileellipsometer, a non-imaging scatterometer, a scatterometer, aspectroscopic scatterometer, a reflectometer, an ellipsometer, a brightfield imaging device, a dark field imaging device, a bright field anddark field imaging device, a non-imaging bright field device, anon-imaging dark field device, a non-imaging bright field and dark fielddevice, and a double dark field device.
 2159. The system of claim 2132,wherein the measurement device further comprises at least a firstmeasurement device and a second measurement device, and wherein opticalelements of the first measurement device comprise optical elements ofthe second measurement device.
 2160. The system of claim 2132, whereinthe defects comprise micro defects and macro defects.
 2161. The systemof claim 2132, wherein the defects comprises micro defects or macrodefects.
 2162. The system of claim 2132, wherein the thin filmcharacteristic comprises a thickness of a copper film, and wherein thedefects comprise voids in the copper film.
 2163. The system of claim2132, wherein the defects comprise copper contamination on a back sideof the specimen.
 2164. The system of claim 2132, wherein the processoris further configured to determine a fourth property of the specimenfrom the one or more output signals during use, and wherein the fourthproperty is selected from the group consisting of a roughness of thespecimen, a roughness of a layer on the specimen, and a roughness of afeature of the specimen.
 2165. The system of claim 2164, wherein thesystem is coupled to a process tool selected from the group consistingof a lithography tool, an atomic layer deposition tool, a cleaning tool,and an etch tool.
 2166. The system of claim 2132, wherein theillumination system is further configured to direct energy toward abottom surface of the specimen during use, wherein the detection systemis further configured to detect energy propagating from the bottomsurface of the specimen during use, and wherein the second propertyfurther comprises a presence of defects on the bottom surface of thespecimen.
 2167. The system of claim 2166, wherein the defects comprisemacro defects.
 2168. The system of claim 2132, wherein the illuminationsystem and the detection system comprise non-optical components, andwherein the detected energy is responsive to a non-opticalcharacteristic of the specimen.
 2169. The system of claim 2132, whereinthe system is further configured to determine at least the threeproperties of the specimen substantially simultaneously during use.2170. The system of claim 2132, wherein the illumination system isfurther configured to direct energy to multiple locations on the surfaceof the specimen substantially simultaneously, and wherein the detectionsystem is further configured to detect energy propagating from themultiple locations on the surface of the specimen substantiallysimultaneously such that the first, second, and third properties of thespecimen at the multiple locations can be determined substantiallysimultaneously.
 2171. The system of claim 2132, wherein the system iscoupled to a semiconductor fabrication process tool.
 2172. The system ofclaim 2132, wherein the system is coupled to a process tool, and whereinthe system is disposed within the process tool.
 2173. The system ofclaim 2132, wherein the system is coupled to a process tool, and whereinthe system is arranged laterally proximate to the process tool. 2174.The system of claim 2132, wherein the system is coupled to a processtool, and wherein the process tool comprises a wafer handler configuredto move the specimen to the stage during use.
 2175. The system of claim2132, wherein the system is coupled to a process tool, and wherein thestage is configured to move the specimen from the system to the processtool during use.
 2176. The system of claim 2132, wherein the system iscoupled to a process tool, and wherein the stage is further configuredto move the specimen to a process chamber of the process tool duringuse.
 2177. The system of claim 2132, wherein the system is coupled to aprocess tool, and wherein the system is further configured to determineat least the two properties of the specimen while the specimen iswaiting between process steps.
 2178. The system of claim 2132, whereinthe system is coupled to a process tool, wherein the process toolcomprises a support device configured to support the specimen during aprocess step, and wherein an upper surface of the support device issubstantially parallel to an upper surface of the stage.
 2179. Thesystem of claim 2132, wherein the system is coupled to a process tool,wherein the process tool comprises a support device configured tosupport the specimen during a process step, and wherein an upper surfaceof the stage is angled with respect to an upper surface of the supportdevice.
 2180. The system of claim 2132, wherein the system is coupled toa process tool, and wherein the process tool is selected from the groupconsisting of a lithography tool, an etch tool, a chemical-mechanicalpolishing tool, and a thermal tool.
 2181. The system of claim 2132,wherein the system further comprises a measurement chamber, wherein thestage and the measurement device are disposed within the measurementchamber, and wherein the measurement chamber is coupled to a processtool.
 2182. The system of claim 2132, wherein the system furthercomprises a measurement chamber, wherein the stage and the measurementdevice are disposed within the measurement chamber, and wherein themeasurement chamber is disposed within a process tool.
 2183. The systemof claim 2132, wherein the system further comprises a measurementchamber, wherein the stage and the measurement device are disposedwithin the measurement chamber, and wherein the measurement chamber isarranged laterally proximate to a process chamber of a process tool.2184. The system of claim 2132, wherein the system further comprises ameasurement chamber, wherein the stage and the measurement device aredisposed within the measurement chamber, and wherein the measurementchamber is arranged vertically proximate to a process chamber of aprocess tool.
 2185. The system of claim 2132, wherein a process toolcomprises a process chamber, wherein the stage is disposed within theprocess chamber, and wherein the stage is further configured to supportthe specimen during a process step.
 2186. The system of claim 2185,wherein the processor is further configured to determine at least thethree properties of the specimen during the process step.
 2187. Thesystem of claim 2186, wherein the processor is further configured toobtain a signature characterizing the process step during use, andwherein the signature comprises at least one singularity representativeof an end of the process step.
 2188. The system of claim 2186, whereinthe processor is further coupled to the process tool and is furtherconfigured to alter a parameter of one or more instruments coupled tothe process tool in response to at least one of the determinedproperties using an in situ control technique during use.
 2189. Thesystem of claim 2132, wherein a process tool comprises a first processchamber and a second process chamber, and wherein the stage is furtherconfigured to move the specimen from the first process chamber to thesecond process chamber during use.
 2190. The system of claim 2189,wherein the system is further configured to determine at least the threeproperties of the specimen as the stage is moving the specimen from thefirst process chamber to the second process chamber.
 2191. The system ofclaim 2132, wherein the processor is further configured to compare atleast one of the determined properties of the specimen and properties ofa plurality of specimens during use.
 2192. The system of claim 2132,wherein the processor is further configured to compare at least one ofthe determined properties of the specimen to a predetermined range forthe property during use.
 2193. The system of claim 2192, wherein theprocessor is further configured to generate an output signal if at leastone of the determined properties of the specimen is outside of thepredetermined range for the property during use.
 2194. The system ofclaim 2132, wherein the processor is further configured to alter asampling frequency of the measurement device in response to at least oneof the determined properties of the specimen during use.
 2195. Thesystem of claim 2132, wherein the processor is further configured toalter a parameter of one or more instruments coupled to the measurementdevice in response to at least one of the determined properties using afeedback control technique during use.
 2196. The system of claim 2132,wherein the processor is further configured to alter a parameter of oneor more instruments coupled to the measurement device in response to atleast one of the determined properties using a feedforward controltechnique during use.
 2197. The system of claim 2132, wherein theprocessor is further configured to generate a database during use,wherein the database comprises the determined properties of thespecimen, and wherein the processor is further configured to calibratethe measurement device using the database during use.
 2198. The systemof claim 2132, wherein the processor is further configured to generate adatabase during use, wherein the database comprises the determinedproperties of the specimen, and wherein the processor is furtherconfigured to monitor output signals generated by measurement deviceusing the database during use.
 2199. The system of claim 2132, whereinthe processor is further configured to generate a database during use,wherein the database comprises the determined properties of thespecimen, and wherein the database further comprises first, second, andthird properties of a plurality of specimens.
 2200. The system of claim2199, wherein the first, second, and third properties of the pluralityof specimens are determined using a plurality of measurement devices,wherein the processor is further coupled to the plurality of measurementdevices, and wherein the processor is further configured to calibratethe plurality of measurement devices using the database during use.2201. The system of claim 2199, wherein the first, second, and thirdproperties of the plurality of specimens are determined using aplurality of measurement devices, wherein the processor is furthercoupled to the plurality of measurement devices, and wherein theprocessor is further configured to monitor output signals generated bythe plurality of measurement devices using the database during use.2202. The system of claim 2132, further comprising a stand alone systemcoupled to the system, wherein the stand alone system is configured tobe calibrated with a calibration standard during use, and wherein thestand alone system is further configured to calibrate the system duringuse.
 2203. The system of claim 2132, further comprising a stand alonesystem coupled the system and at least one additional system, whereinthe stand alone system is configured to be calibrated with a calibrationstandard during use, and wherein the stand alone system is furtherconfigured to calibrate the system and at least the one additionalsystem during use.
 2204. The system of claim 2132, wherein the system isfurther configured to determine at least the two properties of thespecimen at more than one position on the specimen, wherein the specimencomprises a wafer, and wherein the processor is configured to alter atleast one parameter of one or more instruments coupled to a process toolin response to at least one of the determined properties of the specimenat the more than one position on the specimen to reduce within wafervariation of at least one of the determined properties.
 2205. The systemof claim 2132, wherein the processor is further coupled to a processtool, and wherein the processor is further configured to alter aparameter of one or more instruments coupled to the process tool inresponse to at least one of the determined properties using a feedbackcontrol technique during use.
 2206. The system of claim 2132, whereinthe processor is further coupled to a process tool, and wherein theprocessor is further configured to alter a parameter of one or moreinstruments coupled to the process tool in response to at least one ofthe determined properties using a feedforward control technique duringuse.
 2207. The system of claim 2132, wherein the processor is furthercoupled to a process tool, and wherein the processor is furtherconfigured to monitor a parameter of one or more instruments coupled tothe process tool during use.
 2208. The system of claim 2207, wherein theprocessor is further configured to determine a relationship between atleast one of the determined properties and at least one of the monitoredparameters during use.
 2209. The system of claim 2208, wherein theprocessor is further configured to alter a parameter of at least one ofthe instruments in response to the relationship during use.
 2210. Thesystem of claim 2132, wherein the processor is further coupled to aplurality of measurement devices, and wherein at least one of theplurality of measurement devices is coupled to one of a plurality ofprocess tools.
 2211. The system of claim 2132, wherein the processor isfurther coupled to a plurality of process tools, and wherein theprocessor is further configured to alter a parameter of one or moreinstruments coupled to at least one of the plurality of process toolsduring use.
 2212. The system of claim 2132, wherein the processorcomprises a local processor coupled to the measurement device and aremote controller computer coupled to the local processor, wherein thelocal processor is configured to at least partially process the one ormore output signals during use, and wherein the remote controllercomputer is configured to further process the at least partiallyprocessed one or more output signals during use.
 2213. The system ofclaim 2212, wherein the local processor is further configured todetermine the first, second, and third properties of the specimen duringuse.
 2214. The system of claim 2212, wherein the remote controllercomputer is further configured to determine the first, second, and thirdproperties of the specimen during use.
 2215. A method for determining atleast three properties of a specimen, comprising: disposing the specimenupon a stage, wherein the stage is coupled to a measurement device, andwherein the measurement device comprises an illumination system and adetection system; directing energy toward a surface of the specimenusing the illumination system; detecting energy propagating from thesurface of the specimen using the detection system; generating one ormore output signals responsive to the detected energy; and processingthe one or more output signals to determine a first property, a secondproperty, and a third property of the specimen, wherein the firstproperty comprises a flatness measurement of the specimen, wherein thesecond property comprises a presence of defects on the specimen, andwherein the third property comprises a thin film characteristic of thespecimen.
 2216. The method of claim 2215, further comprising laterallymoving the stage during said directing energy and said detecting energy.2217. The method of claim 2215, further comprising rotatably moving thestage during said directing energy and said detecting energy.
 2218. Themethod of claim 2215, further comprising laterally and rotatably movingthe stage during said directing energy and said detecting energy. 2219.The method of claim 2215, wherein the illumination system comprises asingle energy source.
 2220. The method of claim 2215, wherein theillumination system comprises more than one energy source.
 2221. Themethod of claim 2215, wherein the detection system comprises a singleenergy sensitive device.
 2222. The method of claim 2215, wherein thedetection system comprises more than one energy sensitive devices. 2223.The method of claim 2215, wherein the measurement device furthercomprises an optical profilometer.
 2224. The method of claim 2215,wherein the measurement device further comprises an interferometer.2225. The method of claim 2215, wherein the measurement device furthercomprises a spectroscopic reflectometer.
 2226. The method of claim 2215,wherein the measurement device further comprises a spectroscopicellipsometer.
 2227. The method of claim 2215, wherein the measurementdevice further comprises a dual beam spectrophotometer.
 2228. The methodof claim 2215, wherein the measurement device further comprises a beamprofile ellipsometer.
 2229. The method of claim 2215, wherein themeasurement device further comprises a non-imaging scatterometer. 2230.The method of claim 2215, wherein the measurement device furthercomprises a scatterometer.
 2231. The method of claim 2215, wherein themeasurement device further comprises a spectroscopic scatterometer.2232. The method of claim 2215, wherein the measurement device furthercomprises a reflectometer.
 2233. The method of claim 2215, wherein themeasurement device further comprises an ellipsometer.
 2234. The methodof claim 2215, wherein the measurement device further comprises a brightfield imaging device.
 2235. The method of claim 2215, wherein themeasurement device further comprises a dark field imaging device. 2236.The method of claim 2215, wherein the measurement device furthercomprises a bright field and dark field imaging device.
 2237. The methodof claim 2215, wherein the measurement device further comprises anon-imaging bright field device.
 2238. The method of claim 2215, whereinthe measurement device further comprises a non-imaging dark fielddevice.
 2239. The method of claim 2215, wherein the measurement devicefurther comprises a non-imaging bright field and dark field device.2240. The method of claim 2215, wherein the measurement device furthercomprises a double dark field device.
 2241. The method of claim 2215,wherein the measurement device further comprises at least a firstmeasurement device and a second measurement device, and wherein thefirst and second measurement devices are selected from the groupconsisting of an optical profilometer, an interferometer, aspectroscopic reflectometer, a dual beam spectrophotometer, a beamprofile ellipsometer, a non-imaging scatterometer, a scatterometer, aspectroscopic scatterometer, a reflectometer, an ellipsometer, a brightfield imaging device, a dark field imaging device, a bright field anddark field imaging device, a non-imaging bright field device, anon-imaging dark field device, a non-imaging bright field and dark fielddevice, and a double dark field device.
 2242. The method of claim 2215,wherein the measurement device further comprises at least a firstmeasurement device and a second measurement device, and wherein opticalelements of the first measurement device comprise optical elements ofthe second measurement device.
 2243. The method of claim 2215, whereinthe defects comprise micro defects and macro defects.
 2244. The methodof claim 2215, wherein the defects comprises micro defects or macrodefects.
 2245. The method of claim 2215, wherein the thin filmcharacteristic comprises a thickness of a copper film, and wherein thedefects comprise voids in the copper film.
 2246. The method of claim2215, wherein the defects comprise copper contamination on a back sideof the specimen.
 2247. The method of claim 2215, further comprisingprocessing the one or more output signals to determine a fourth propertyof the specimen, wherein the fourth property is selected from the groupconsisting of a roughness of the specimen, a roughness of a layer on thespecimen, and a roughness of a feature of the specimen.
 2248. The methodof claim 2247, wherein the stage and the measurement device are coupledto a process tool selected from the group consisting of a lithographytool, an atomic layer deposition tool, a cleaning tool, and an etchtool.
 2249. The method of claim 2215, further comprising: directingenergy toward a bottom surface of the specimen; and detecting energypropagating from the bottom surface of the specimen, wherein the secondproperty comprises a presence of defects on the bottom surface of thespecimen.
 2250. The method of claim 2249, wherein the defects comprisemacro defects.
 2251. The method of claim 2215, wherein the measurementdevice further comprises non-optical components, and wherein detectingenergy comprises measuring a nonoptical characteristic of the specimen.2252. The method of claim 2215, wherein processing the one or moreoutput signals to determine the first, second, and properties of thespecimen comprises substantially simultaneously determining the first,second, and third properties of the specimen.
 2253. The method of claim2215, further comprising directing energy toward multiple locations onthe surface of the specimen substantially simultaneously and detectingenergy propagating from the multiple locations substantiallysimultaneously such that the first, second, and third properties of thespecimen at the multiple locations can be determined substantiallysimultaneously.
 2254. The method of claim 2215, wherein the stage andthe measurement device are coupled to a process tool.
 2255. The methodof claim 2215, wherein the stage and the measurement device are coupledto a process tool, and wherein the stage and the measurement device arearranged laterally proximate to the process tool.
 2256. The method ofclaim 2215, wherein the stage and the measurement device are coupled toa process tool, and wherein the stage and the measurement device aredisposed within the process tool.
 2257. The method of claim 2215,wherein the stage and the measurement device are coupled to a processtool, and wherein the semiconductor fabrication process tool is selectedfrom the group consisting of a lithography tool, an etch tool, achemical-mechanical polishing tool, and a thermal tool.
 2258. The methodof claim 2215, wherein the stage and the measurement device are coupledto a process tool, wherein the process tool comprises a wafer handler,and wherein disposing the specimen upon the stage comprises moving thespecimen from the process tool to the stage using the wafer handler.2259. The method of claim 2215, wherein the stage and the measurementdevice are coupled to a process tool, the method further comprisingmoving the specimen to the process tool subsequent to said directing andsaid detecting using the stage.
 2260. The method of claim 2215, whereinthe stage and the measurement device are coupled to a process tool, themethod further comprising determining at least the two properties of thespecimen while the specimen is waiting between process steps.
 2261. Themethod of claim 2215, wherein the stage and the measurement device arecoupled to a process tool, wherein the process tool comprises a supportdevice configured to support the specimen during a process step, andwherein an upper surface of the support device is substantially parallelto an upper surface of the stage.
 2262. The method of claim 2215,wherein the stage and the measurement device are coupled to a processtool, wherein the process tool comprises a support device configured tosupport the specimen during a process step, and wherein an upper surfaceof the stage is angled with respect to an upper surface of the supportdevice.
 2263. The method of claim 2215, wherein the stage and themeasurement device are disposed within a measurement chamber, andwherein the measurement chamber is coupled to a process tool.
 2264. Themethod of claim 2215, wherein the stage and the measurement device aredisposed within a measurement chamber, and wherein the measurementchamber is disposed within a process tool.
 2265. The method of claim2215, wherein the stage and the measurement device are disposed within ameasurement chamber, and wherein the measurement chamber is arrangedlaterally proximate to a process chamber of a process tool.
 2266. Themethod of claim 2215, wherein the stage and the measurement device aredisposed within a measurement chamber, and wherein the measurementchamber is arranged vertically proximate to a process chamber of aprocess tool.
 2267. The method of claim 2215, wherein disposing thespecimen upon the stage comprises disposing the specimen upon a supportdevice disposed within a process chamber of a process tool, and whereinthe support device is configured to support the specimen during aprocess step.
 2268. The method of claim 2267, further comprisingperforming said directing and said detecting during the process step.2269. The method of claim 2268, further comprising obtaining a signaturecharacterizing the process step, wherein the signature comprises atleast one singularity representative of an end of the process step.2270. The method of claim 2268, further comprising altering a parameterof one or more instruments coupled to the process tool in response to atleast one of the determined properties using an in situ controltechnique.
 2271. The method of claim 2215, further comprising moving thespecimen from a first process chamber to a second process chamber usingthe stage, wherein the first process chamber and the second processchamber are disposed within a process tool.
 2272. The method of claim2271, further comprising performing said directing and said detectingduring said moving the specimen from the first process chamber to thesecond process chamber.
 2273. The method of claim 2215, furthercomprising comparing at least one of the determined properties of thespecimen and determined properties of a plurality of specimens. 2274.The method of claim 2215, further comprising comparing at least one ofthe determined properties of the specimen to a predetermined range forthe property.
 2275. The method of claim 2274, further comprisinggenerating an output signal if at least one of the determined propertiesof the specimen is outside of the predetermined range for the property.2276. The method of claim 2215, further comprising altering a samplingfrequency of the measurement device in response to at least one of thedetermined properties of the specimen.
 2277. The method of claim 2215,further comprising altering a parameter of one or more instrumentscoupled to the measurement device in response to at least one of thedetermined properties using a feedback control technique.
 2278. Themethod of claim 2215, further comprising altering a parameter of one ormore instruments coupled to the measurement device in response to atleast one of the determined properties using a feedforward controltechnique.
 2279. The method of claim 2215, further comprising generatinga database, wherein the database comprises the determined properties ofthe specimen, the method further comprising calibrating the measurementdevice using the database.
 2280. The method of claim 2215, furthercomprising generating a database, wherein the database comprises thedetermined properties of the specimen, the method further comprisingmonitoring output signals generated by the measurement device using thedatabase.
 2281. The method of claim 2215, further comprising generatinga database, wherein the database comprises the determined properties ofthe specimen, and wherein the database further comprises first, second,and third properties of a plurality of specimens.
 2282. The method ofclaim 2281, wherein the first, second, and third properties of theplurality of specimens are generated using a plurality of measurementdevices, the method further comprising calibrating the plurality ofmeasurement devices using the database.
 2283. The method of claim 2281,wherein the first, second, and third properties of the plurality ofspecimens are generated using a plurality of measurement devices, themethod further comprising monitoring output signals generated by theplurality of measurement devices using the database.
 2284. The method ofclaim 2215, wherein a stand alone system is coupled to the measurementdevice, the method further comprising calibrating the stand alone systemwith a calibration standard and calibrating the measurement device withthe stand alone system.
 2285. The method of claim 2215, wherein a standalone system is coupled to the measurement device and at least oneadditional measurement device, the method further comprising calibratingthe stand alone system with a calibration standard and calibrating themeasurement device an at least the one additional measurement devicewith the stand alone system.
 2286. The method of claim 2215, furthercomprising determining at least the two properties of the specimen atmore than one position on the specimen, wherein the specimen comprises awafer, the method further comprising altering at least one parameter ofone or more instruments coupled to a process tool in response to atleast one of the determined properties of the specimen at the more thanone position on the specimen to reduce within wafer variation of atleast one of the determined properties.
 2287. The method of claim 2215,further comprising altering a parameter of one or more instrumentscoupled to a process tool in response to at least one of the determinedproperties of the specimen using a feedback control technique.
 2288. Themethod of claim 2215, further comprising altering a parameter of one ormore instruments coupled to a process tool in response to at least oneof the determined properties of the specimen using a feedforward controltechnique.
 2289. The method of claim 2215, further comprising monitoringa parameter of one or more instruments coupled to a process tool. 2290.The method of claim 2215, further comprising monitoring a parameter ofan instrument coupled to a process tool and determining a relationshipbetween the at least one of the determined properties and at least oneof the monitored parameters.
 2291. The method of claim 2215, furthercomprising monitoring a parameter of an instrument coupled to a processtool, determining a relationship between the at least one of thedetermined properties and at least one of the monitored parameters, andaltering a parameter of at least one of the instruments in response tothe relationship.
 2292. The method of claim 2215, further comprisingaltering a parameter of one or more instruments coupled to a pluralityof process tools in response to at least one of the determinedproperties of the specimen.
 2293. The method of claim 2215, whereinprocessing the one or more output signals comprises: at least partiallyprocessing the one or more output signals using a local processor,wherein the local processor is coupled to the measurement device;sending the partially processed one or more output signals from thelocal processor to a remote controller computer; and further processingthe partially processed one or more output signals using the remotecontroller computer.
 2294. The method of claim 2293, wherein at leastpartially processing the one or more output signals comprisesdetermining the first, second, and third properties of the specimen.2295. The method of claim 2293, wherein further processing the partiallyprocessed one or more output signals comprises determining the first,second, and third properties of the specimen.
 2296. Acomputer-implemented method for controlling a system configured todetermine at least three properties of a specimen during use, whereinthe system comprises a measurement device, comprising: controlling themeasurement device, wherein the measurement device comprises anillumination system and a detection system, and wherein the measurementdevice is coupled to a stage, comprising: controlling the illuminationsystem to direct energy toward a surface of the specimen; controllingthe detection system to detect energy propagating from the surface ofthe specimen; and generating one or more output signals responsive tothe detected energy; and processing the one or more output signals todetermine a first property, a second property, and a third property ofthe specimen, wherein the first property comprises a flatnessmeasurement of the specimen, wherein the second property comprises apresence of defects on the specimen, and wherein the third propertycomprises a thin film characteristic of the specimen.
 2297. The methodof claim 2296, further comprising controlling the stage, wherein thestage is configured to support the specimen.
 2298. The method of claim2296, further comprising controlling the stage to laterally move thestage during said directing energy and said detecting energy.
 2299. Themethod of claim 2296, further comprising controlling the stage torotatably move the stage during said directing energy and said detectingenergy.
 2300. The method of claim 2296, further comprising controllingthe stage to laterally and rotatably move the stage during saiddirecting energy and said detecting energy.
 2301. The method of claim2296, wherein the illumination system comprises a single energy source.2302. The method of claim 2296, wherein the illumination systemcomprises more than one energy source.
 2303. The method of claim 2296,wherein the detection system comprises a single energy sensitive device.2304. The method of claim 2296, wherein the detection system comprisesmore than one energy sensitive devices.
 2305. The method of claim 2296,wherein the measurement device comprises an optical profilometer. 2306.The method of claim 2296, wherein the measurement device furthercomprises an interferometer.
 2307. The method of claim 2296, wherein themeasurement device further comprises a spectroscopic reflectometer.2308. The method of claim 2296, wherein the measurement device furthercomprises a spectroscopic ellipsometer.
 2309. The method of claim 2296,wherein the measurement device further comprises a dual beamspectrophotometer.
 2310. The method of claim 2296, wherein themeasurement device further comprises a beam profile ellipsometer. 2311.The method of claim 2296, wherein the measurement device furthercomprises a non-imaging scatterometer.
 2312. The method of claim 2296,wherein the measurement device further comprises a scatterometer. 2313.The method of claim 2296, wherein the measurement device furthercomprises a spectroscopic scatterometer.
 2314. The method of claim 2296,wherein the measurement device further comprises a reflectometer. 2315.The method of claim 2296, wherein the measurement device furthercomprises an ellipsometer.
 2316. The method of claim 2296, wherein themeasurement device further comprises a bright field imaging device.2317. The method of claim 2296, wherein the measurement device furthercomprises a dark field imaging device.
 2318. The method of claim 2296,wherein the measurement device further comprises a bright field and darkfield imaging device.
 2319. The method of claim 2296, wherein themeasurement device further comprises a non-imaging bright field device.2320. The method of claim 2296, wherein the measurement device furthercomprises a non-imaging dark field device.
 2321. The method of claim2296, wherein the measurement device further comprises a non-imagingbright field and dark field device.
 2322. The method of claim 2296,wherein the measurement device further comprises a double dark fielddevice.
 2323. The method of claim 2296, wherein the measurement devicefurther comprises at least a first measurement device and a secondmeasurement device, and wherein the first and second measurement devicesare selected from the group consisting of an optical profilometer, aninterferometer, a spectroscopic reflectometer, a dual beamspectrophotometer, a beam profile ellipsometer, a non-imagingscatterometer, a scatterometer, a spectroscopic scatterometer, areflectometer, an ellipsometer, a bright field imaging device, a darkfield imaging device, a bright field and dark field imaging device, anon-imaging bright field device, a non-imaging dark field device, anon-imaging bright field and dark field device, and a double dark fielddevice.
 2324. The method of claim 2296, wherein the measurement devicefurther comprises at least a first measurement device and a secondmeasurement device, and wherein optical elements of the firstmeasurement device comprise optical elements of the second measurementdevice.
 2325. The method of claim 2296, wherein the defects comprisemicro defects and macro defects.
 2326. The method of claim 2296, whereinthe defects comprises micro defects or macro defects.
 2327. The methodof claim 2296, wherein the thin film characteristic comprises athickness of a copper film, and wherein the defects comprise voids inthe copper film.
 2328. The method of claim 2296, wherein the defectscomprise copper contamination on a back side of the specimen.
 2329. Themethod of claim 2296, further comprising processing the one or moreoutput signals to determine a fourth property of the specimen, whereinthe fourth property is selected from the group consisting of a roughnessof the specimen, a roughness of a layer on the specimen, and a roughnessof a feature of the specimen.
 2330. The method of claim 2329, whereinthe stage and the measurement device are coupled to a process toolselected from the group consisting of a lithography tool, an atomiclayer deposition tool, a cleaning tool, and an etch tool.
 2331. Themethod of claim 2296, further comprising: controlling the illuminationsystem to direct energy toward a bottom surface of the specimen; andcontrolling the detection system to detect energy propagating from thebottom surface of the specimen, wherein the second property furthercomprises a presence of defects on the bottom surface of the specimen.2332. The method of claim 2331, wherein the defects comprise macrodefects.
 2333. The method of claim 2296, wherein the measurement devicefurther comprises non-optical components, and wherein controlling thedetection system to detect energy comprises controlling the non-opticalcomponents to measure a non-optical characteristic of the specimen.2334. The method of claim 2296, wherein processing the one or moreoutput signals to determine the first, second, and third properties ofthe specimen comprises substantially simultaneously determining thefirst, second, and third properties of the specimen.
 2335. The method ofclaim 2296, further comprising controlling the illumination system todirect energy toward multiple locations on the surface of the specimensubstantially simultaneously and controlling the detection system todetect energy propagating from the multiple locations substantiallysimultaneously such that the first, second, and third properties of thespecimen at the multiple locations can be determined substantiallysimultaneously.
 2336. The method of claim 2296, wherein the stage andthe measurement device are coupled to a process tool.
 2337. The methodof claim 2296, wherein the stage and the measurement device are coupledto a process tool, and wherein the stage and the measurement device arearranged laterally proximate to the process tool.
 2338. The method ofclaim 2296, wherein the stage and the measurement device are coupled toa process tool, and wherein the stage and the measurement device aredisposed within the process tool.
 2339. The method of claim 2296,wherein the stage and the measurement device are coupled to a processtool, and wherein the process tool is selected from the group consistingof a lithography tool, and etch tool, a chemical-mechanical polishingtool, and a thermal tool.
 2340. The method of claim 2296, furthercomprising controlling a wafer handler to move the specimen from aprocess tool to the stage, wherein the wafer handler is coupled to theprocess tool.
 2341. The method of claim 2296, further comprisingcontrolling the stage to move the specimen from the system to a processtool.
 2342. The method of claim 2296, wherein the stage and themeasurement device are coupled to a process tool, the method furthercomprising controlling a wafer handler to move the specimen from theprocess tool to the stage such that at least the two properties of thespecimen can be determined while the specimen is waiting between processsteps.
 2343. The method of claim 2296, wherein the stage and themeasurement device are coupled to a process tool, wherein the processtool comprises a support device configured to support the specimenduring a process step, and wherein an upper surface of the supportdevice is substantially parallel to an upper surface of the stage. 2344.The method of claim 2296, wherein the stage and the measurement deviceare coupled to a process tool, wherein the process tool comprises asupport device configured to support the specimen during a process step,and wherein an upper surface of the stage is angled with respect to anupper surface of the support device.
 2345. The method of claim 2296,wherein the stage and the measurement device are disposed within ameasurement chamber, and wherein the measurement chamber is coupled to aprocess tool.
 2346. The method of claim 2296, wherein the stage and themeasurement device are disposed within a measurement chamber, andwherein the measurement chamber is disposed within a process tool. 2347.The method of claim 2296, wherein the stage and the measurement deviceare disposed within a measurement chamber, and wherein the measurementchamber is arranged laterally proximate to a process chamber of aprocess tool.
 2348. The method of claim 2296, wherein the stage and themeasurement device are disposed within a measurement chamber, andwherein the measurement chamber is arranged vertically proximate to aprocess chamber of a process tool.
 2349. The method of claim 2296,further comprising disposing the specimen upon a support device disposedwithin a process chamber of a process tool, and wherein the supportdevice is configured to support the specimen during a process step.2350. The method of claim 2349, further comprising controlling theillumination system and controlling the detection system during theprocess step.
 2351. The method of claim 2350, further comprisingcontrolling the system to obtain a signature characterizing the processstep, wherein the signature comprises at least one singularityrepresentative of an end of the process step.
 2352. The method of claim2350, further comprising controlling the system to alter a parameter ofone or more instruments coupled to the process tool in response to atleast one of the determined properties using an in situ controltechnique.
 2353. The method of claim 2296, further comprisingcontrolling the stage to move the specimen from a first process chamberto a second process chamber, wherein the first process chamber and thesecond process chamber are disposed within a process tool.
 2354. Themethod of claim 2353, further comprising controlling the illuminationsystem and controlling the detection system during said moving thespecimen from the first process chamber to the second process chamber.2355. The method of claim 2296, further comprising comparing at leastone of the determined properties of the specimen and determinedproperties of a plurality of specimens.
 2356. The method of claim 2296,further comprising comparing at least one of the determined propertiesof the specimen to a predetermined range for the property.
 2357. Themethod of claim 2356, further comprising generating an output signal ifat least one of the determined properties of the specimen is outside ofthe predetermined range for the property.
 2358. The method of claim2296, further comprising altering a sampling frequency of themeasurement device in response to at least one of the determinedproperties of the specimen.
 2359. The method of claim 2296, furthercomprising altering a parameter of one or more instruments coupled tothe measurement device in response to at least one of the determinedproperties using a feedback control technique.
 2360. The method of claim2296, further comprising altering a parameter of one or more instrumentscoupled to the measurement device in response to at least one of thedetermined properties using a feedforward control technique.
 2361. Themethod of claim 2296, further comprising generating a database, whereinthe database comprises the determined first, second, and thirdproperties of the specimen, the method further comprising calibratingthe measurement device using the database.
 2362. The method of claim2296, further comprising generating a database, wherein the databasecomprises the determined first, second, and third properties of thespecimen, the method further comprising monitoring output signalsgenerated by the measurement device using the database.
 2363. The methodof claim 2296, further comprising generating a database, wherein thedatabase comprises the determined first, second, and third properties ofthe specimen, and wherein the database further comprises first, second,and third properties of a plurality of specimens.
 2364. The method ofclaim 2363, wherein the first, second, and third properties of theplurality of specimens are generated using a plurality of measurementdevices, the method further comprising calibrating the plurality ofmeasurement devices using the database.
 2365. The method of claim 2363,wherein the first, second, and third properties of the plurality ofspecimens are generated using a plurality of measurement devices, themethod further comprising monitoring output signals generated by theplurality of measurement devices using the database.
 2366. The method ofclaim 2296, wherein a stand alone system is coupled to the system, themethod further comprising controlling the stand alone system tocalibrate the stand alone system with a calibration standard and furthercontrolling the stand alone system to calibrate the system.
 2367. Themethod of claim 2296, wherein a stand alone system is coupled to thesystem and at least one additional system, the method further comprisingcontrolling the stand alone system to calibrate the stand alone systemwith a calibration standard and further controlling the stand alonesystem to calibrate the system and at least the one additional system.2368. The method of claim 2296, wherein the system is further configuredto determine at least the two properties of the specimen at more thanone position on the specimen, and wherein the specimen comprises awafer, the method further comprising altering at least one parameter ofone or more instruments coupled to a process tool in response to atleast one of the determined properties of the specimen at the more thanone position on the specimen to reduce within wafer variation of atleast one of the determined properties.
 2369. The method of claim 2296,further comprising altering a parameter of one or more instrumentscoupled to a process tool in response to at least one of the determinedproperties of the specimen using a feedback control technique.
 2370. Themethod of claim 2296, further comprising altering a parameter of one ormore instruments coupled to a process tool in response to at least oneof the determined properties of the specimen using a feedforward controltechnique.
 2371. The method of claim 2296, further comprising monitoringa parameter of one or more instruments coupled to a process tool. 2372.The method of claim 2371, further comprising determining a relationshipbetween at least one of the determined properties and at least one ofthe monitored parameters.
 2373. The method of claim 2372, furthercomprising altering a parameter of at least one of the instruments inresponse to the relationship.
 2374. The method of claim 2296, furthercomprising altering a parameter of one or more instruments coupled to aplurality of process tools in response to at least one of the determinedproperties of the specimen.
 2375. The method of claim 2296, whereinprocessing the one or more output signals comprises: at least partiallyprocessing the one or more output signals using a local processor,wherein the local processor is coupled to the measurement device;sending the partially processed one or more output signals from thelocal processor to a remote controller computer; and further processingthe partially processed one or more output signals using the remotecontroller computer.
 2376. The method of claim 2375, wherein at leastpartially processing the one or more output signals comprisesdetermining the first, second, and third properties of the specimen.2377. The method of claim 2375, wherein further processing the partiallyprocessed one or more output signals comprises determining the first,second, and third properties of the specimen.
 2378. A semiconductordevice fabricated by a method, the method comprising: forming a portionof the semiconductor device upon a specimen; disposing the specimen upona stage, wherein the stage is coupled to a measurement device, andwherein the measurement device comprises an illumination system and adetection system; directing energy toward a surface of the specimenusing the illumination system; detecting energy propagating from thesurface of the specimen using the detection system; generating one ormore output signals responsive to the detected energy; and processingthe one or more output signals to determine a first property, a secondproperty, and a third property of the specimen, wherein the firstproperty comprises a flatness measurement of the specimen, wherein thesecond property comprises a presence of defects on the specimen, andwherein the third property comprises a thin film characteristic of thespecimen.
 2379. The device of claim 2378, wherein the illuminationsystem comprises a single energy source.
 2380. The device of claim 2378,wherein the illumination system comprises more than one energy source.2381. The device of claim 2378, wherein the detection system comprises asingle energy sensitive device.
 2382. The device of claim 2378, whereinthe detection system comprises more than one energy sensitive devices.2383. The device of claim 2378, wherein the measurement device isselected from the group consisting of an optical profilometer, aninterferometer, a spectroscopic reflectometer, a spectroscopicellipsometer, a dual beam spectrophotometer, and a beam profileellipsometer a non-imaging scatterometer, a scatterometer, aspectroscopic scatterometer, a reflectometer, an ellipsometer, a brightfield imaging device, a dark field imaging device, a bright field anddark field imaging device, a non-imaging bright field device, anon-imaging dark field device, a non-imaging bright field and dark fielddevice, and a double dark field device.
 2384. The device of claim 2378,wherein the measurement device further comprises at least a firstmeasurement device and a second measurement device, and wherein thefirst and second measurement devices are selected from the groupconsisting of an optical profilometer, an interferometer, aspectroscopic reflectometer, a spectroscopic ellipsometer, a dual beamspectrophotometer, and a beam profile ellipsometer a non-imagingscatterometer, a scatterometer, a spectroscopic scatterometer, areflectometer, an ellipsometer, a bright field imaging device, a darkfield imaging device, a bright field and dark field imaging device, anon-imaging bright field device, a non-imaging dark field device, anon-imaging bright field and dark field device, and a double dark fielddevice.
 2385. The device of claim 2378, wherein the measurement devicefurther comprises at least a first measurement device and a secondmeasurement device, and wherein optical elements of the firstmeasurement device comprise optical elements of the second measurementdevice.
 2386. The device of claim 2378, wherein the defects comprisemicro defects and macro defects.
 2387. The device of claim 2378, whereinthe defects comprises micro defects or macro defects.
 2388. The deviceof claim 2378, wherein the thin film characteristic comprises athickness of a copper film, and wherein the defects comprise voids inthe copper film.
 2389. The device of claim 2378, wherein the defectscomprise copper contamination on a back side of the specimen.
 2390. Thedevice of claim 2378, further comprising processing the one or moreoutput signals to determine a fourth property of the specimen, whereinthe fourth property is selected from the group consisting of a roughnessof the specimen, a roughness of a layer on the specimen, and a roughnessof a feature of the specimen.
 2391. The device of claim 2390, whereinthe stage and the measurement device are coupled to a process toolselected from the group consisting of a lithography tool, an atomiclayer deposition tool, a cleaning tool, and an etch tool.
 2392. Thedevice of claim 2378, further comprising: directing energy toward abottom surface of the specimen; and detecting energy propagating fromthe bottom surface of the specimen, wherein the second property furthercomprises a presence of defects on the bottom surface of the specimen.2393. The device of claim 2392, wherein the defects comprise macrodefects.
 2394. The device of claim 2378, wherein the measurement devicecomprises non-optical components, and wherein detecting energy comprisesmeasuring a non-optical characteristic of the specimen.
 2395. The deviceof claim 2378, wherein the stage and the measurement device are coupledto a process tool.
 2396. The device of claim 2378, wherein the stage andthe measurement device are coupled to a process tool, and wherein theprocess tool is selected from the group consisting of a lithographytool, an etch tool, a chemical-mechanical polishing tool, and a thermaltool.
 2397. A method for fabricating a semiconductor device, comprising:forming a portion of the semiconductor device upon a specimen; disposingthe specimen upon a stage, wherein the stage is coupled to a measurementdevice, and wherein the measurement device comprises an illuminationsystem and a detection system; directing energy toward a surface of thespecimen using the illumination system; detecting energy propagatingfrom the surface of the specimen using the detection system; generatingone or more output signals in response to the detected energy; andprocessing the one or more output signals to determine a first property,a second property, and a third property of the specimen, wherein thefirst property comprises a flatness measurement of the specimen, whereinthe second property comprises a presence of defects on the specimen, andwherein the third property comprises a thin film characteristic of thespecimen.
 2398. The method of claim 2397, wherein the illuminationsystem comprises a single energy source.
 2399. The method of claim 2397,wherein the illumination system comprises more than one energy source.2400. The method of claim 2397, wherein the detection system comprises asingle energy sensitive device.
 2401. The method of claim 2397, whereinthe detection system comprises more than one energy sensitive devices.2402. The method of claim 2397, wherein the measurement device isselected from the group consisting of an optical profilometer, aninterferometer, a spectroscopic reflectometer, a spectroscopicellipsometer, a dual beam spectrophotometer, and a beam profileellipsometer a non-imaging scatterometer, a scatterometer, aspectroscopic scatterometer, a reflectometer, an ellipsometer, a brightfield imaging device, a dark field imaging device, a bright field anddark field imaging device, a non-imaging bright field device, anon-imaging dark field device, a non-imaging bright field and dark fielddevice, and a double dark field device.
 2403. The method of claim 2397,wherein the measurement device further comprises at least a firstmeasurement device and a second measurement device, and wherein thefirst and second measurement devices are selected from the groupconsisting of an optical profilometer, an interferometer, aspectroscopic reflectometer, a spectroscopic ellipsometer, a dual beamspectrophotometer, and a beam profile ellipsometer a non-imagingscatterometer, a scatterometer, a spectroscopic scatterometer, areflectometer, an ellipsometer, a bright field imaging device, a darkfield imaging device, a bright field and dark field imaging device, anon-imaging bright field device, a non-imaging dark field device, anon-imaging bright field and dark field device, and a double dark fielddevice.
 2404. The method of claim 2397, wherein the measurement devicefurther comprises at least a first measurement device and a secondmeasurement device, and wherein optical elements of the firstmeasurement device comprise optical elements of the second measurementdevice.
 2405. The method of claim 2397, wherein the defects comprisemicro defects and macro defects.
 2406. The method of claim 2397, whereinthe defects comprises micro defects or macro defects.
 2407. The methodof claim 2397, wherein the thin film characteristic comprises athickness of a copper film, and wherein the defects comprise voids inthe copper film.
 2408. The method of claim 2397, wherein the defectscomprise copper contamination on a back side of the specimen.
 2409. Themethod of claim 2397, further comprising processing the one or moreoutput signals to determine a fourth property of the specimen, whereinthe fourth property is selected from the group consisting of a roughnessof the specimen, a roughness of a layer on the specimen, and a roughnessof a feature of the specimen.
 2410. The method of claim 2409, whereinthe stage and the measurement device are coupled to a process toolselected from the group consisting of a lithography tool, an atomiclayer deposition tool, a cleaning tool, and an etch tool.
 2411. Themethod of claim 2397, further comprising: directing energy toward abottom surface of the specimen; and detecting energy propagating fromthe bottom surface of the specimen, wherein the second property furthercomprises a presence of defects on the bottom surface of the specimen.2412. The method of claim 2411, wherein the defects comprise macrodefects.
 2413. The method of claim 2397, wherein the measurement devicecomprises nonoptical components, and wherein detecting energy comprisesmeasuring a non-optical characteristic of the specimen.
 2414. The methodof claim 2397, wherein the stage and the measurement device are coupledto a process tool.
 2415. The method of claim 2397, wherein the stage andthe measurement device are coupled to a process tool, and wherein theprocess tool is selected from the group consisting of a lithographytool, an etch tool, a chemical-mechanical polishing tool, and a thermaltool.
 2416. A system configured to determine at least three propertiesof a specimen during use, comprising: a stage configured to support thespecimen during use; a measurement device coupled to the stage,comprising: an illumination system configured to direct energy toward asurface of the specimen during use; and a detection system coupled tothe illumination system and configured to detect energy propagating fromthe surface of the specimen during use, wherein the measurement deviceis configured to generate one or more output signals in response to thedetected energy; a local processor coupled to the measurement device andconfigured to at least partially process the one or more output signalsduring use; and a remote controller computer coupled to the localprocessor, wherein the remote controller computer is configured toreceive the at least partially processed one or more output signals andto determine a first property, a second property, and a third propertyof the specimen from the at least partially processed one or more outputsignals during use, wherein the first property comprises a flatnessmeasurement of the specimen, wherein the second property comprises apresence of defects on the specimen, and wherein the third propertycomprises a thin film characteristic of the specimen.
 2417. The systemof claim 2416, wherein the measurement device is selected from the groupconsisting of an optical profilometer, an interferometer, aspectroscopic reflectometer, a spectroscopic ellipsometer, a dual beamspectrophotometer, and a beam profile ellipsometer a non-imagingscatterometer, a scatterometer, a spectroscopic scatterometer, areflectometer, an ellipsometer, a bright field imaging device, a darkfield imaging device, a bright field and dark field imaging device, anon-imaging bright field device, a non-imaging dark field device, anon-imaging bright field and dark field device, and a double dark fielddevice.
 2418. The system of claim 2416, wherein the measurement devicefurther comprises at least a first measurement device and a secondmeasurement device, and wherein the first and second measurement devicesare selected from the group consisting of an optical profilometer, aninterferometer, a spectroscopic reflectometer, a spectroscopicellipsometer, a dual beam spectrophotometer, and a beam profileellipsometer a non-imaging scatterometer, a scatterometer, aspectroscopic scatterometer, a reflectometer, an ellipsometer, a brightfield imaging device, a dark field imaging device, a bright field anddark field imaging device, a non-imaging bright field device, anon-imaging dark field device, a non-imaging bright field and dark fielddevice, and a double dark field device.
 2419. The system of claim 2416,wherein the measurement device further comprises at least a firstmeasurement device and a second measurement device, and wherein opticalelements of the first measurement device comprise optical elements ofthe second measurement device.
 2420. The system of claim 2416, whereinthe defects comprise micro defects and macro defects.
 2421. The systemof claim 2416, wherein the defects comprises micro defects or macrodefects.
 2422. The system of claim 2416, wherein the thin filmcharacteristic comprises a thickness of a copper film, and wherein thedefects comprise voids in the copper film.
 2423. The system of claim2416, wherein the defects comprise copper contamination on a back sideof the specimen.
 2424. The system of claim 2416, wherein the remotecontroller computer is further configured to determine a fourth propertyof the specimen from the at least partially processed one or more outputsignals during use, and wherein the fourth property is selected from thegroup consisting of a roughness of the specimen, a roughness of a layeron the specimen, and a roughness of a feature of the specimen.
 2425. Thesystem of claim 2424, wherein the system is coupled to a process toolselected from the group consisting of a lithography tool, an atomiclayer deposition tool, a cleaning tool, and an etch tool.
 2426. Thesystem of claim 2416, wherein the illumination system is furtherconfigured to direct energy toward a bottom surface of the specimenduring use, wherein the detection system is further configured to detectenergy propagating from the bottom surface of the specimen during use,and wherein the second property further comprises a presence of defectson the bottom surface of the specimen.
 2427. The system of claim 2426,wherein the defects comprise macro defects.
 2428. The system of claim2416, wherein the illumination system and the detection system comprisenon-optical components, and wherein the detected energy is responsive toa non-optical characteristic of the specimen.
 2429. The system of claim2416, wherein the remote controller computer is coupled to a processtool.
 2430. The system of claim 2416, wherein the remote controllercomputer is coupled to a process tool, and wherein the process tool isselected from a group consisting of a lithography tool, an etch tool, achemical-mechanical polishing tool, and a thermal tool.
 2431. The systemof claim 2416, wherein the remote controller computer is coupled to aprocess tool, and wherein the remote controller computer is furtherconfigured to alter a parameter of one or more instruments coupled tothe process tool in response to at least one of the determinedproperties using a feedback control technique during use.
 2432. Thesystem of claim 2416, wherein the remote controller computer is coupledto a process tool, and wherein the remote controller computer is furtherconfigured to alter a parameter of one or more instruments coupled tothe process tool in response to at least one of the determinedproperties using a feedforward control technique during use.
 2433. Thesystem of claim 2416, wherein the remote controller computer is coupledto a process tool, and wherein the remote controller computer is furtherconfigured to monitor a parameter of one or more instruments coupled tothe process tool during use.
 2434. The system of claim 2433, wherein theremote controller computer is further configured to determine arelationship between at least one of the determined properties and atleast one of the monitored parameters during use.
 2435. The system ofclaim 2434, wherein the remote controller computer is further configuredto alter a parameter of at least one of the instruments in response tothe relationship during use.
 2436. The system of claim 2416, wherein theillumination system is further configured to direct energy toward thesurface of the specimen during a process step, wherein the detectionsystem is further configured to detect energy propagating from thesurface of the specimen during the process step, and wherein the remotecontroller computer is further configured to determine the first,second, and third properties of the specimen during the process step.2437. The system of claim 2436, wherein the remote controller computeris further configured to obtain a signature characterizing the processstep during use, and wherein the signature comprises at least onesingularity representative of an end of the process step.
 2438. Thesystem of claim 2436, wherein the remote controller computer is furtherconfigured to alter a parameter of one or more instruments coupled tothe process tool in response to at least one of the determinedproperties using an in situ control technique during use.
 2439. Thesystem of claim 2416, wherein a process tool comprises a first processchamber and a second process chamber, and wherein the stage is furtherconfigured to move the specimen from the first process chamber to thesecond process chamber during use.
 2440. The system of claim 2439,wherein the illumination system is further configured to direct energytoward the surface of the specimen during said moving, wherein thedetection system is further configured to detect energy propagating fromthe surface of the specimen during said moving, and wherein the remotecontroller computer is further configured to determine the first,second, and third properties of the specimen during said moving. 2441.The system of claim 2416, wherein the remote controller computer isfurther configured to compare at least one of the determined propertiesof the specimen and properties of a plurality of specimens during use.2442. The system of claim 2416, wherein the remote controller computeris further configured to compare at least one of the determinedproperties of the specimen to a predetermined range for the propertyduring use.
 2443. The system of claim 2442, wherein the remotecontroller computer is further configured to generate an output signalif at least one of the determined properties of the specimen is outsideof the predetermined range for the property during use.
 2444. The systemof claim 2416, wherein the remote controller computer is furtherconfigured to alter a sampling frequency of the measurement device inresponse to at least one of the determined properties of the specimenduring use.
 2445. The system of claim 2416, wherein the remotecontroller computer is further configured to alter a parameter of one ormore instruments coupled to the measurement device in response to atleast one of the determined properties using a feedback controltechnique during use.
 2446. The system of claim 2416, wherein the remotecontroller computer is further configured to alter a parameter of one ormore instruments coupled to the measurement device in response to atleast one of the determined properties using a feedforward controltechnique during use.
 2447. The system of claim 2416, wherein the remotecontroller computer is further configured to generate a database duringuse, wherein the database comprises the determined first, second, andthird properties of the specimen, and wherein the remote controllercomputer is further configured to calibrate the measurement device usingthe database during use.
 2448. The system of claim 2416, wherein theremote controller computer is further configured to generate a databaseduring use, wherein the database comprises the determined first, second,and third properties of the specimen, and wherein the remote controllercomputer is further configured to monitor output signals generated bymeasurement device using the database during use.
 2449. The system ofclaim 2416, wherein the remote controller computer is further configuredto generate a database during use, wherein the database comprises thedetermined first, second, and third properties of the specimen, andwherein the database further comprises first, second, and thirdproperties of a plurality of specimens.
 2450. The system of claim 2449,wherein the first, second, and third properties of the plurality ofspecimens are determined using a plurality of measurement devices,wherein the remote controller computer is further coupled to theplurality of measurement devices, and wherein the remote controllercomputer is further configured to calibrate the plurality of measurementdevices using the database during use.
 2451. The system of claim 2449,wherein the first, second, and third properties of the plurality ofspecimens are determined using a plurality of measurement devices,wherein the remote controller computer is further coupled to theplurality of measurement devices, and wherein the remote controllercomputer is further configured to monitor output signals generated bythe plurality of measurement devices using the database during use.2452. The system of claim 2416, wherein the remote controller computeris further coupled to a plurality of measurement devices, wherein eachof the plurality of measurement devices is coupled to one of a pluralityof process tools.
 2453. The system of claim 2416, wherein the remotecontroller computer is coupled to at least one of a plurality of processtools, and wherein the remote controller computer is further configuredto alter a parameter of one or more instruments coupled to at least oneof the plurality of process tools during use.
 2454. A method fordetermining at least three properties of a specimen, comprising:disposing the specimen upon a stage, wherein the stage is coupled to ameasurement device, and wherein the measurement device comprises anillumination system and a detection system; directing energy toward asurface of the specimen using the illumination system; detecting energypropagating from the surface of the specimen using the detection system;generating one or more output signals responsive to the detected energy;and processing the one or more output signals to determine a firstproperty, a second property, and a third property of the specimen,wherein the first property comprises a flatness measurement of thespecimen, wherein the second property comprises a presence of defects onthe specimen, and wherein the third property comprises a thin filmcharacteristic of the specimen, comprising: at least partiallyprocessing the one or more output signals using a local processor,wherein the local processor is coupled to the measurement device;sending the partially processed one or more output signals from thelocal processor to a remote controller computer; and further processingthe partially processed one or more output signals using the remotecontroller computer.
 2455. The method of claim 2454, wherein themeasurement device is selected from the group consisting of an opticalprofilometer, an interferometer, a spectroscopic reflectometer, aspectroscopic ellipsometer, a dual beam spectrophotometer, and a beamprofile ellipsometer a non-imaging scatterometer, a scatterometer, aspectroscopic scatterometer, a reflectometer, an ellipsometer, a brightfield imaging device, a dark field imaging device, a bright field anddark field imaging device, a non-imaging bright field device, anon-imaging dark field device, a non-imaging bright field and dark fielddevice, and a double dark field device.
 2456. The method of claim 2454,wherein the measurement device further comprises at least a firstmeasurement device and a second measurement device, and wherein thefirst and second measurement devices are selected from the groupconsisting of an optical profilometer, an interferometer, aspectroscopic reflectometer, a spectroscopic ellipsometer, a dual beamspectrophotometer, and a beam profile ellipsometer a non-imagingscatterometer, a scatterometer, a spectroscopic scatterometer, areflectometer, an ellipsometer, a bright field imaging device, a darkfield imaging device, a bright field and dark field imaging device, anon-imaging bright field device, a non-imaging dark field device, anon-imaging bright field and dark field device, and a double dark fielddevice.
 2457. The method of claim 2454, wherein the measurement devicefurther comprises at least a first measurement device and a secondmeasurement device, and wherein optical elements of the firstmeasurement device comprise optical elements of the second measurementdevice.
 2458. The method of claim 2454, wherein the defects comprisemicro defects and macro defects.
 2459. The method of claim 2454, whereinthe defects comprises micro defects or macro defects.
 2460. The methodof claim 2454, wherein the thin film characteristic comprises athickness of a copper film, and wherein the defects comprise voids inthe copper film.
 2461. The method of claim 2454, wherein the defectscomprise copper contamination on a back side of the specimen.
 2462. Themethod of claim 2454, further comprising processing the one or moreoutput signals to determine a fourth property of the specimen, whereinthe fourth property is selected from the group consisting of a roughnessof the specimen, a roughness of a layer on the specimen, and a roughnessof a feature of the specimen.
 2463. The method of claim 2462, whereinthe stage and the measurement device are coupled to a process toolselected from the group consisting of a lithography tool, an atomiclayer deposition tool, a cleaning tool, and an etch tool.
 2464. Themethod of claim 2454, further comprising: directing energy toward abottom surface of the specimen; and detecting energy propagating fromthe bottom surface of the specimen, wherein the second property furthercomprises a presence of defects on the bottom surface of the specimen.2465. The method of claim 2464, wherein the defects comprise macrodefects.
 2466. The method of claim 2454, wherein the measurement devicecomprises non-optical components, and wherein detecting energy comprisesmeasuring a non-optical characteristic of the specimen.
 2467. The methodof claim 2454, wherein the remote controller computer is coupled to aprocess tool.
 2468. The method of claim 2454, wherein the remotecontroller computer is coupled to a process tool, and wherein theprocess tool is selected from the group consisting of a lithographytool, an etch tool, a chemical-mechanical polishing tool, and a thermaltool.
 2469. The method of claim 2454, wherein the remote controllercomputer is coupled to a process tool, the method further comprisingaltering a parameter of one or more instruments coupled to the processtool using the remote controller computer in response to at least one ofthe determined properties of the specimen comprises using a feedbackcontrol technique.
 2470. The method of claim 2454, wherein the remotecontroller computer is coupled to a process tool, the method furthercomprising altering a parameter of one or more instruments coupled tothe process tool using the remote controller computer in response to atleast one of the determined properties of the specimen comprises using afeedforward control technique.
 2471. The method of claim 2454, whereinthe remote controller computer is coupled to a process tool, the methodfurther comprising monitoring a parameter of one or more instrumentscoupled to the process tool using the remote controller computer. 2472.The method of claim 2471, further comprising determining a relationshipbetween at least one of the determined properties and at least one ofthe monitored parameters using the remote controller computer.
 2473. Themethod of claim 2472, further comprising altering a parameter of atleast one of the instruments in response to the relationship using theremote controller computer.
 2474. The method of claim 2454, wherein theillumination system and the detection system are coupled to a processchamber of a process tool, the method further comprising performing saiddirecting and said detecting during a process step.
 2475. The method ofclaim 2474, further comprising obtaining a signature characterizing theprocess step using the remote controller computer, wherein the signaturecomprises at least one singularity representative of an end of theprocess step.
 2476. The method of claim 2474, further comprisingaltering a parameter of one or more instruments coupled to the processtool using the remote controller computer in response to at least one ofthe determined properties using an in situ control technique.
 2477. Themethod of claim 2454, further comprising: moving the specimen from afirst process chamber to a second process chamber using the stage; andperforming said directing and said detecting during said moving thespecimen.
 2478. The method of claim 2454, further comprising comparingat least one of the determined properties of the specimen and determinedproperties of a plurality of specimens using the remote controllercomputer.
 2479. The method of claim 2454, further comprising comparingat least one of the determined properties of the specimen to apredetermined range for the property using the remote controllercomputer.
 2480. The method of claim 2479, further comprising generatingan output signal using the remote controller computer if at least one ofthe determined properties of the specimen is outside of thepredetermined range for the property.
 2481. The method of claim 2454,wherein the remote controller computer is coupled to the measurementdevice, the method further comprising altering a sampling frequency ofthe measurement device using the remote controller computer in responseto at least one of the determined properties of the specimen.
 2482. Themethod of claim 2454, wherein the remote controller computer is coupledto the measurement device, the method further comprising altering aparameter of one or more instruments coupled to the measurement deviceusing the remote controller computer in response to at least one of thedetermined properties using a feedback control technique.
 2483. Themethod of claim 2454, wherein the remote controller computer is coupledto the measurement device, the method further comprising altering aparameter of one or more instruments coupled to the measurement deviceusing the remote controller computer in response to at least one of thedetermined properties using a feedforward control technique.
 2484. Themethod of claim 2454, further comprising generating a database using theremote controller computer, wherein the database comprises thedetermined first, second and third properties of the specimen.
 2485. Themethod of claim 2454, further comprising generating a database using theremote controller computer, wherein the database comprises thedetermined first, second and third properties of the specimen, themethod further comprising calibrating the measurement device using theremote controller computer.
 2486. The method of claim 2454, furthercomprising generating a database using the remote controller computer,wherein the database comprises the determined first, second and thirdproperties of the specimen, the method further comprising monitoringoutput signals generated by the measurement device using the remotecontroller computer.
 2487. The method of claim 2454, further comprisinggenerating a database using the remote controller computer, wherein thedatabase comprises the determined first, second and third properties ofthe specimen, and wherein the database further comprises first, second,and third properties of a plurality of specimens.
 2488. The method ofclaim 2487, wherein the first, second, and third properties of theplurality of specimens are generated using a plurality of measurementdevices, the method further comprising calibrating the plurality ofmeasurement devices using the remote controller computer.
 2489. Themethod of claim 2487, wherein the first, second, and third properties ofthe plurality of specimens are generated using a plurality ofmeasurement devices, the method further comprising monitoring outputsignals generated by the plurality of measurement devices using theremote controller computer.
 2490. The method of claim 2454, furthercomprising sending the at least partially processed one or more outputsignals from a plurality of local processors to the remote controllercomputer, wherein each of the plurality of local processors is coupledto one of a plurality of measurement devices.
 2491. The method of claim2490, further comprising altering a parameter of one or more instrumentscoupled to at least one of the plurality of measurement devices usingthe remote controller computer in response to at least one of thedetermined properties of the specimen.
 2492. The method of claim 2490,wherein at least one of the plurality of measurement devices is coupledto one of a plurality of process tools.
 2493. The method of claim 2492,further comprising altering a parameter of one or more instrumentscoupled to at least one of the plurality of process tools using theremote controller computer in response to at least one of the determinedproperties of the specimen.
 2494. A system configured to determine atleast two properties of a specimen during use, comprising: a stageconfigured to support the specimen during use; a measurement devicecoupled to the stage, comprising: an illumination system configured todirect energy toward a surface of the specimen during use; and adetection system coupled to the illumination system and configured todetect energy propagating from the surface of the specimen during use,wherein the measurement device is configured to generate one or moreoutput signals responsive to the detected energy during use; and aprocessor coupled to the measurement device and configured to determinea first property and a second property of the specimen from the one ormore output signals during use, wherein the first property comprisesoverlay misregistration of the specimen, and wherein the second propertycomprises a flatness measurement of the specimen.
 2495. The system ofclaim 2494, wherein the stage is further configured to move laterallyduring use.
 2496. The system of claim 2494, wherein the stage is furtherconfigured to move rotatably during use.
 2497. The system of claim 2494,wherein the stage is further configured to move laterally and rotatablyduring use.
 2498. The system of claim 2494, wherein the illuminationsystem comprises a single energy source.
 2499. The system of claim 2494,wherein the illumination system comprises more than one energy source.2500. The system of claim 2494, wherein the detection system comprises asingle energy sensitive device.
 2501. The system of claim 2494, whereinthe detection system comprises more than one energy sensitive devices.2502. The system of claim 2494, wherein the measurement device furthercomprises a coherence probe microscope.
 2503. The system of claim 2494,wherein the measurement device further comprises an interferometer.2504. The system of claim 2494, wherein the measurement device furthercomprises an optical profilometer.
 2505. The system of claim 2494,wherein the measurement device further comprises a spectroscopicreflectometer.
 2506. The system of claim 2494, wherein the measurementdevice further comprises a spectroscopic ellipsometer.
 2507. The systemof claim 2494, wherein the measurement device further comprises a dualbeam spectrophotometer.
 2508. The system of claim 2494, wherein themeasurement device further comprises a beam profile ellipsometer. 2509.The system of claim 2494, wherein the measurement device furthercomprises a non-imaging scatterometer.
 2510. The system of claim 2494,wherein the measurement device further comprises a scatterometer. 2511.The system of claim 2494, wherein the measurement device furthercomprises a spectroscopic scatterometer.
 2512. The system of claim 2494,wherein the measurement device further comprises a reflectometer. 2513.The system of claim 2494, wherein the measurement device furthercomprises a bright field imaging device.
 2514. The system of claim 2494,wherein the measurement device further comprises a dark field imagingdevice.
 2515. The system of claim 2494, wherein the measurement devicefurther comprises a bright field and dark field imaging device. 2516.The system of claim 2494, wherein the measurement device furthercomprises at least a first measurement device and a second measurementdevice, and wherein the first and second measurement devices areselected from the group consisting of a coherence probe microscope, aninterferometer, an optical profilometer, a spectroscopic reflectometer,a spectroscopic ellipsometer, a dual beam spectrophotometer, a beamprofile ellipsometer, a non-imaging scatterometer, a scatterometer, aspectroscopic scatterometer, a reflectometer, a bright field imagingdevice, a dark field imaging device, and a bright field and dark fieldimaging device.
 2517. The system of claim 2494, wherein the measurementdevice further comprises at least a first measurement device and asecond measurement device, and wherein optical elements of the firstmeasurement device comprise optical elements of the second measurementdevice.
 2518. The system of claim 2494, wherein the illumination systemis further configured to direct energy to multiple locations on thesurface of the specimen substantially simultaneously, and wherein thedetection system is further configured to detect energy propagating fromthe multiple locations on the surface of the specimen substantiallysimultaneously such that one or more of the at least two properties ofthe specimen can be determined at the multiple locations substantiallysimultaneously.
 2519. The system of claim 2494, wherein the system iscoupled to a process tool.
 2520. The system of claim 2494, wherein thesystem is coupled to a process tool, and wherein the system is disposedwithin the process tool.
 2521. The system of claim 2494, wherein thesystem is coupled to a process tool, and wherein the system is arrangedlaterally proximate to the process tool.
 2522. The system of claim 2494,wherein the system is coupled to a process tool, and wherein the processtool comprises a wafer handler configured to move the specimen to thestage during use.
 2523. The system of claim 2494, wherein the system iscoupled to a process tool, and wherein the stage is configured to movethe specimen from the system to the process tool during use.
 2524. Thesystem of claim 2494, wherein the system is coupled to a process tool,and wherein the stage is further configured to move the specimen to aprocess chamber of the process tool during use.
 2525. The system ofclaim 2494, wherein the system is coupled to a process tool, and whereinthe system is further configured to determine at least the twoproperties of the specimen while the specimen is waiting between processsteps.
 2526. The system of claim 2494, wherein the system is coupled toa lithography tool, wherein the system is configured to determine theflatness measurement of the specimen prior to an exposure step of thelithography process, and wherein the system is configured to determinethe overlay misregistration subsequent to the exposure step of thelithography process.
 2527. The system of claim 2494, wherein the systemis coupled to a process tool, wherein the process tool comprises asupport device configured to support the specimen during a process step,and wherein an upper surface of the support device is substantiallyparallel to an upper surface of the stage.
 2528. The system of claim2494, wherein the system is coupled to a process tool, wherein theprocess tool comprises a support device configured to support thespecimen during a process step, and wherein an upper surface of thestage is angled with respect to an upper surface of the support device.2529. The system of claim 2494, wherein the system is coupled to aprocess tool, and wherein the process tool comprises a lithography tool.2530. The system of claim 2494, wherein the system further comprises ameasurement chamber, wherein the stage and the measurement device aredisposed within the measurement chamber, and wherein the measurementchamber is coupled to a process tool.
 2531. The system of claim 2494,wherein the system further comprises a measurement chamber, wherein thestage and the measurement device are disposed within the measurementchamber, and wherein the measurement chamber is disposed within aprocess tool.
 2532. The system of claim 2494, wherein the system furthercomprises a measurement chamber, wherein the stage and the measurementdevice are disposed within the measurement chamber, and wherein themeasurement chamber is arranged laterally proximate to a process chamberof a process tool.
 2533. The system of claim 2494, wherein the systemfurther comprises a measurement chamber, wherein the stage and themeasurement device are disposed within the measurement chamber, andwherein the measurement chamber is arranged vertically proximate to aprocess chamber of a process tool.
 2534. The system of claim 2494,wherein a process tool comprises a process chamber, wherein the stage isdisposed within the process chamber, and wherein the stage is furtherconfigured to support the specimen during a process step.
 2535. Thesystem of claim 2534, wherein the processor is further configured todetermine at least the two properties of the specimen during the processstep.
 2536. The system of claim 2535, wherein the processor is furtherconfigured to obtain a signature characterizing the process step duringuse, and wherein the signature comprises at least one singularityrepresentative of an end of the process step.
 2537. The system of claim2535, wherein the processor is further coupled to the process tool andis further configured to alter a parameter of one or more instrumentscoupled to the process tool in response to at least one of thedetermined properties using an in situ control technique during use.2538. The system of claim 2494, wherein a process tool comprises a firstprocess chamber and a second process chamber, and wherein the stage isfurther configured to move the specimen from the first process chamberto the second process chamber during use.
 2539. The system of claim2538, wherein the system is further configured to determine at least oneof the two properties of the specimen as the stage is moving thespecimen from the first process chamber to the second process chamber.2540. The system of claim 2494, wherein the processor is furtherconfigured to compare at least one of the determined properties of thespecimen and properties of a plurality of specimens during use. 2541.The system of claim 2494, wherein the processor is further configured tocompare at least one of the determined properties of the specimen to apredetermined range for the property during use.
 2542. The system ofclaim 2541, wherein the processor is further configured to generate anoutput signal if at least one of the determined properties of thespecimen is outside of the predetermined range for the property duringuse.
 2543. The system of claim 2494, wherein the processor is furtherconfigured to alter a sampling frequency of the measurement device inresponse to at least one of the determined properties of the specimenduring use.
 2544. The system of claim 2494, wherein the processor isfurther configured to alter a parameter of one or more instrumentscoupled to the measurement device in response to at least one of thedetermined properties using a feedback control technique during use.2545. The system of claim 2494, wherein the processor is furtherconfigured to alter a parameter of one or more instruments coupled tothe measurement device in response to at least one of the determinedproperties using a feedforward control technique during use.
 2546. Thesystem of claim 2494, wherein the processor is further configured togenerate a database during use, wherein the database comprises thedetermined first and second properties of the specimen, and wherein theprocessor is further configured to calibrate the measurement deviceusing the database during use.
 2547. The system of claim 2494, whereinthe processor is further configured to generate a database during use,wherein the database comprises the determined first and secondproperties of the specimen, and wherein the processor is furtherconfigured to monitor output signals generated by measurement deviceusing the database during use.
 2548. The system of claim 2494, whereinthe processor is further configured to generate a database during use,wherein the database comprises the determined first and secondproperties of the specimen, and wherein the database further comprisesfirst and second properties of a plurality of specimens determined usinga plurality of measurement devices.
 2549. The system of claim 2548,wherein the processor is further coupled to the plurality of measurementdevices, and wherein the processor is further configured to calibratethe plurality of measurement devices using the database during use.2550. The system of claim 2548, wherein the processor is further coupledto the plurality of measurement devices, and wherein the processor isfurther configured to monitor output signals generated by the pluralityof measurement devices using the database during use.
 2551. The systemof claim 2494, further comprising a stand alone system coupled to thesystem, wherein the stand alone system is configured to be calibratedwith a calibration standard during use, and wherein the stand alonesystem is further configured to calibrate the system during use. 2552.The system of claim 2494, further comprising a stand alone systemcoupled the system and at least one additional system, wherein the standalone system is configured to be calibrated with a calibration standardduring use, and wherein the stand alone system is further configured tocalibrate the system and at least the one additional system during use.2553. The system of claim 2494, wherein the system is further configuredto determine at least the two properties of the specimen at more thanone position on the specimen, wherein the specimen comprises a wafer,and wherein the processor is configured to alter at least one parameterof one or more instruments coupled to a process tool in response to atleast one of the determined properties of the specimen at the more thanone position on the specimen to reduce within wafer variation of atleast one of the determined properties.
 2554. The system of claim 2494,wherein the processor is further coupled to a process tool, and whereinthe processor is further configured to alter a parameter of one or moreinstruments coupled to the process tool in response to at least one ofthe determined properties using a feedback control technique during use.2555. The system of claim 2494, wherein the processor is further coupledto a process tool, and wherein the processor is further configured toalter a parameter of one or more instruments coupled to the process toolin response to at least one of the determined properties using afeedforward control technique during use.
 2556. The system of claim2494, wherein the processor is further coupled to a process tool, andwherein the processor is further configured to monitor a parameter ofone or more instruments coupled to the process tool during use. 2557.The system of claim 2556, wherein the processor is further configured todetermine a relationship between at least one of the determinedproperties and at least one of the monitored parameters during use.2558. The system of claim 2557, wherein the processor is furtherconfigured to alter a parameter of at least one of the instruments inresponse to the relationship during use.
 2559. The system of claim 2494,wherein the processor is further coupled to a plurality of measurementdevices, and wherein the plurality of measurement devices is coupled toa plurality of process tools.
 2560. The system of claim 2494, whereinthe processor is further coupled to a plurality of process tools, andwherein the processor is further configured to alter a parameter of oneor more instruments coupled to at least one of the plurality of processtools during use.
 2561. The system of claim 2494, wherein the processorcomprises a local processor coupled to the measurement device and aremote controller computer coupled to the local processor, wherein thelocal processor is configured to at least partially process the one ormore output signals during use, and wherein the remote controllercomputer is configured to further process the at least partiallyprocessed one or more output signals during use.
 2562. The system ofclaim 2561, wherein the local processor is further configured todetermine the first property and the second property of the specimenduring use.
 2563. The system of claim 2561, wherein the remotecontroller computer is further configured to determine the firstproperty and the second property of the specimen during use.
 2564. Amethod for determining at least two properties of a specimen,comprising: disposing the specimen upon a stage, wherein the stage iscoupled to a measurement device, and wherein the measurement devicecomprises an illumination system and a detection system; directingenergy toward a surface of the specimen using the illumination system;detecting energy propagating from the surface of the specimen using thedetection system; generating one or more output signals responsive tothe detected energy; and processing the one or more output signals todetermine a first property and a second property of the specimen,wherein the first property comprises overlay misregistration of thespecimen, and wherein the second property comprises a flatnessmeasurement of the specimen.
 2565. The method of claim 2564, furthercomprising laterally moving the stage during said directing energy andsaid detecting energy.
 2566. The method of claim 2564, furthercomprising rotatably moving the stage during said directing energy andsaid detecting energy.
 2567. The method of claim 2564, furthercomprising laterally and rotatably moving the stage during saiddirecting energy and said detecting energy.
 2568. The method of claim2564, wherein the illumination system comprises a single energy source.2569. The method of claim 2564, wherein the illumination systemcomprises more than one energy source.
 2570. The method of claim 2564,wherein the detection system comprises a single energy sensitive device.2571. The method of claim 2564, wherein the detection system comprisesmore than one energy sensitive devices.
 2572. The method of claim 2564,wherein the measurement device further comprises a coherence probemicroscope.
 2573. The method of claim 2564, wherein the measurementdevice further comprises an interferometer.
 2574. The method of claim2564, wherein the measurement device further comprises an opticalprofilometer.
 2575. The method of claim 2564, wherein the measurementdevice further comprises a spectroscopic reflectometer.
 2576. The methodof claim 2564, wherein the measurement device further comprises aspectroscopic ellipsometer.
 2577. The method of claim 2564, wherein themeasurement device further comprises a dual beam spectrophotometer.2578. The method of claim 2564, wherein the measurement device furthercomprises a beam profile ellipsometer.
 2579. The method of claim 2564,wherein the measurement device further comprises a non-imagingscatterometer.
 2580. The method of claim 2564, wherein the measurementdevice further comprises a scatterometer.
 2581. The method of claim2564, wherein the measurement device further comprises a spectroscopicscatterometer.
 2582. The method of claim 2564, wherein the measurementdevice further comprises a reflectometer.
 2583. The method of claim2564, wherein the measurement device further comprises a bright fieldimaging device.
 2584. The method of claim 2564, wherein the measurementdevice further comprises a dark field imaging device.
 2585. The methodof claim 2564, wherein the measurement device further comprises a brightfield and dark field imaging device.
 2586. The method of claim 2564,wherein the measurement device further comprises at least a firstmeasurement device and a second measurement device, and wherein thefirst and second measurement devices are selected from the groupconsisting of a coherence probe microscope, an interferometer, anoptical profilometer, a spectroscopic reflectometer, a spectroscopicellipsometer, a dual beam spectrophotometer, a beam profileellipsometer, a non-imaging scatterometer, a scatterometer, aspectroscopic scatterometer, a reflectometer, a bright field imagingdevice, a dark field imaging device, and a bright field and dark fieldimaging device.
 2587. The method of claim 2564, wherein the measurementdevice further comprises at least a first measurement device and asecond measurement device, and wherein optical elements of the firstmeasurement device comprise optical elements of the second measurementdevice.
 2588. The method of claim 2564, further comprising directingenergy toward multiple locations on the surface of the specimensubstantially simultaneously and detecting energy propagating from themultiple locations substantially simultaneously such that one or more ofthe at least two properties of the specimen can be determined at themultiple locations substantially simultaneously.
 2589. The method ofclaim 2564, wherein the stage and the measurement device are coupled toa process tool.
 2590. The method of claim 2564, wherein the stage andthe measurement device are coupled to a process tool, and wherein thestage and the measurement device are arranged laterally proximate to theprocess tool.
 2591. The method of claim 2564, wherein the stage and themeasurement device are coupled to a process tool, and wherein the stageand the measurement device are disposed within the process tool. 2592.The method of claim 2564, wherein the stage and the measurement deviceare coupled to a lithography tool.
 2593. The method of claim 2564,wherein the stage and the measurement device are coupled to alithography tool, the method further comprising determining the flatnessmeasurement of the specimen prior to an exposure step of the lithographyprocess and determining the overlay misregistration subsequent to theexposure step of the lithography process.
 2594. The method of claim2564, wherein the stage and the measurement device are coupled to aprocess tool, wherein the process tool comprises a wafer handler, andwherein disposing the specimen upon the stage comprises moving thespecimen from the process tool to the stage using the wafer handler.2595. The method of claim 2564, wherein the stage and the measurementdevice are coupled to a process tool, the method further comprisingmoving the specimen to the process tool subsequent to said directing andsaid detecting using the stage.
 2596. The method of claim 2564, whereinthe stage and the measurement device are coupled to a process tool, themethod further comprising determining at least the two properties of thespecimen while the specimen is waiting between process steps.
 2597. Themethod of claim 2564, wherein the stage and the measurement device arecoupled to a process tool, wherein the process tool comprises a supportdevice configured to support the specimen during a process step, andwherein an upper surface of the support device is substantially parallelto an upper surface of the stage.
 2598. The method of claim 2564,wherein the stage and the measurement device are coupled to a processtool, wherein the process tool comprises a support device configured tosupport the specimen during a process step, and wherein an upper surfaceof the stage is angled with respect to an upper surface of the supportdevice.
 2599. The method of claim 2564, wherein the stage and themeasurement device are disposed within a measurement chamber, andwherein the measurement chamber is coupled to a process tool.
 2600. Themethod of claim 2564, wherein the stage and the measurement device aredisposed within a measurement chamber, and wherein the measurementchamber is disposed within a process tool.
 2601. The method of claim2564, wherein the stage and the measurement device are disposed within ameasurement chamber, and wherein the measurement chamber is arrangedlaterally proximate to a process chamber of a process tool.
 2602. Themethod of claim 2564, wherein the stage and the measurement device aredisposed within a measurement chamber, and wherein the measurementchamber is arranged vertically proximate to a process chamber of aprocess tool.
 2603. The method of claim 2564, wherein the stage and themeasurement device are disposed within a measurement chamber, whereindisposing the specimen upon the stage comprises disposing the specimenupon a support device disposed within a process chamber of a processtool, and wherein the support device is configured to support thespecimen during a process step.
 2604. The method of claim 2603, furthercomprising performing said directing and said detecting during theprocess step.
 2605. The method of claim 2604, further comprisingobtaining a signature characterizing the process step, wherein thesignature comprises at least one singularity representative of an end ofthe process step.
 2606. The method of claim 2604, further comprisingaltering a parameter of one or more instruments coupled to the processtool in response to at least one of the determined properties using anin situ control technique.
 2607. The method of claim 2564, furthercomprising moving the specimen from a first process chamber to a secondprocess chamber using the stage, wherein the first process chamber andthe second process chamber are disposed within a process tool.
 2608. Themethod of claim 2607, further comprising performing said directing andsaid detecting during said moving the specimen from the first processchamber to the second process chamber.
 2609. The method of claim 2564,further comprising comparing at least one of the determined propertiesof the specimen and determined properties of a plurality of specimens.2610. The method of claim 2564, further comprising comparing at leastone of the determined properties of the specimen to a predeterminedrange for the property.
 2611. The method of claim 2610, furthercomprising generating an output signal if at least one of the determinedproperties of the specimen is outside of the predetermined range for theproperty.
 2612. The method of claim 2564, further comprising altering asampling frequency of the measurement device in response to at least oneof the determined properties of the specimen.
 2613. The method of claim2564, further comprising altering a parameter of one or more instrumentscoupled to the measurement device in response to at least one of thedetermined properties using a feedback control technique.
 2614. Themethod of claim 2564, further comprising altering a parameter of one ormore instruments coupled to the measurement device in response to atleast one of the determined properties using a feedforward controltechnique.
 2615. The method of claim 2564, further comprising generatinga database, wherein the database comprises the determined first andsecond properties of the specimen.
 2616. The method of claim 2564,further comprising generating a database, wherein the database comprisesthe determined first and second properties of the specimen, the methodfurther comprising calibrating the measurement device using thedatabase.
 2617. The method of claim 2564, further comprising generatinga database, wherein the database comprises the determined first andsecond properties of the specimen, the method further comprisingmonitoring output signals of the measurement device using the database.2618. The method of claim 2564, further comprising generating adatabase, wherein the database comprises the determined first and secondproperties of the specimen, and wherein the database further comprisesfirst and second properties of a plurality of specimens.
 2619. Themethod of claim 2618, wherein the first and second properties of theplurality of specimens are generated using a plurality of measurementdevices, the method further comprising calibrating the plurality ofmeasurement devices using the database.
 2620. The method of claim 2618,wherein the first and second properties of the plurality of specimensare generated using a plurality of measurement devices, the methodfurther comprising monitoring output signals of the plurality ofmeasurement devices using the database.
 2621. The method of claim 2564,wherein a stand alone system is coupled to the measurement device, themethod further comprising calibrating the stand alone system with acalibration standard and calibrating the measurement device with thestand alone system.
 2622. The method of claim 2564, wherein a standalone system is coupled to the measurement device and at least oneadditional measurement device, the method further comprising calibratingthe stand alone system with a calibration standard and calibrating themeasurement device an at least the one additional measurement devicewith the stand alone system.
 2623. The method of claim 2564, furthercomprising determining at least the two properties of the specimen atmore than one position on the specimen, wherein the specimen comprises awafer, the method further comprising altering at least one parameter ofone or more instruments coupled to a process tool in response to atleast one of the determined properties of the specimen at the more thanone position on the specimen to reduce within wafer variation of atleast one of the determined properties.
 2624. The method of claim 2564,further comprising altering a parameter of one or more instrumentscoupled to a process tool in response to at least one of the determinedproperties using a feedback control technique.
 2625. The method of claim2564, further comprising altering a parameter of one or more instrumentscoupled to a process tool in response to at least one of the determinedproperties using a feedforward control technique.
 2626. The method ofclaim 2564, further comprising monitoring a parameter of one or moreinstruments coupled to the process tool.
 2627. The method of claim 2626,further comprising determining a relationship between at least one ofthe determined properties and at least one of the monitored parameters.2628. The method of claim 2627, further comprising altering a parameterof at least one of the instruments in response to the relationship.2629. The method of claim 2564, further comprising altering a parameterof one or more instruments coupled to a plurality of process tools inresponse to at least one of the determined properties of the specimen.2630. The method of claim 2564, wherein processing the one or moreoutput signals comprises: at least partially processing the one or moreoutput signals using a local processor, wherein the local processor iscoupled to the measurement device; sending the partially processed oneor more output signals from the local processor to a remote controllercomputer; and further processing the partially processed one or moreoutput signals using the remote controller computer.
 2631. The method ofclaim 2630, wherein at least partially processing the one or more outputsignals comprises determining the first and second properties of thespecimen.
 2632. The method of claim 2630, wherein further processing thepartially processed one or more output signals comprises determining thefirst and second properties of the specimen.
 2633. Acomputer-implemented method for controlling a system configured todetermine at least two properties of a specimen during use, wherein thesystem comprises a measurement device, the method comprising:controlling the measurement device, wherein the measurement devicecomprises an illumination system and a detection system, and wherein themeasurement device is coupled to a stage, comprising: controlling theillumination system to direct energy toward a surface of the specimen;controlling the detection system to detect energy propagating from thesurface of the specimen; and generating one or more output signalsresponsive to the detected energy; and processing the one or more outputsignals to determine a first property and a second property of thespecimen, wherein the first property comprises overlay misregistrationof the specimen, and wherein the second property comprises a flatnessmeasurement of the specimen.
 2634. The method of claim 2633, furthercomprising controlling the stage, wherein the stage is configured tosupport the specimen.
 2635. The method of claim 2633, further comprisingcontrolling the stage to laterally move the stage during said directingenergy and said detecting energy.
 2636. The method of claim 2633,further comprising controlling the stage to rotatably move the stageduring said directing energy and said detecting energy.
 2637. The methodof claim 2633, further comprising controlling the stage to laterally androtatably move the stage during said directing energy and said detectingenergy.
 2638. The method of claim 2633, wherein the illumination systemcomprises a single energy source.
 2639. The method of claim 2633,wherein the illumination system comprises more than one energy source.2640. The method of claim 2633, wherein the detection system comprises asingle energy sensitive device.
 2641. The method of claim 2633, whereinthe detection system comprises more than one energy sensitive devices.2642. The method of claim 2633, wherein the measurement device furthercomprises a coherence probe microscope.
 2643. The method of claim 2633,wherein the measurement device further comprises an interferometer.2644. The method of claim 2633, wherein the measurement device furthercomprises an optical profilometer.
 2645. The method of claim 2633,wherein the measurement device further comprises a spectroscopicreflectometer.
 2646. The method of claim 2633, wherein the measurementdevice further comprises a spectroscopic ellipsometer.
 2647. The methodof claim 2633, wherein the measurement device further comprises a dualbeam spectrophotometer.
 2648. The method of claim 2633, wherein themeasurement device further comprises a beam profile ellipsometer. 2649.The method of claim 2633, wherein the measurement device furthercomprises a non-imaging scatterometer.
 2650. The method of claim 2633,wherein the measurement device further comprises a scatterometer. 2651.The method of claim 2633, wherein the measurement device furthercomprises a spectroscopic scatterometer.
 2652. The method of claim 2633,wherein the measurement device further comprises a reflectometer. 2653.The method of claim 2633, wherein the measurement device furthercomprises a bright field imaging device.
 2654. The method of claim 2633,wherein the measurement device further comprises a dark field imagingdevice.
 2655. The method of claim 2633, wherein the measurement devicefurther comprises a bright field and dark field imaging device. 2656.The method of claim 2633, wherein the measurement device furthercomprises at least a first measurement device and a second measurementdevice, and wherein the first and second measurement devices areselected from the group consisting of a coherence probe microscope, aninterferometer, an optical profilometer, a spectroscopic reflectometer,a spectroscopic ellipsometer, a dual beam spectrophotometer, a beamprofile ellipsometer, a non-imaging scatterometer, a scatterometer, aspectroscopic scatterometer, a reflectometer, a bright field imagingdevice, a dark field imaging device, and a bright field and dark fieldimaging device.
 2657. The method of claim 2633, wherein the measurementdevice further comprises at least a first measurement device and asecond measurement device, and wherein optical elements of the firstmeasurement device comprise optical elements of the second measurementdevice.
 2658. The method of claim 2633, further comprising controllingthe illumination system to direct energy toward multiple locations onthe surface of the specimen substantially simultaneously and controllingthe detection system to detect energy propagating from the multiplelocations substantially simultaneously such that one or more of the atleast two properties of the specimen can be determined at the multiplelocations substantially simultaneously.
 2659. The method of claim 2633,wherein the stage and the measurement device are coupled to a processtool.
 2660. The method of claim 2633, wherein the stage and themeasurement device are coupled to a process tool, and wherein the stageand the measurement device are arranged laterally proximate to theprocess tool.
 2661. The method of claim 2633, wherein the stage and themeasurement device are coupled to a process tool, and wherein the stageand the measurement device are disposed within the process tool. 2662.The method of claim 2633, wherein the stage and the measurement deviceare coupled to a process tool, and wherein the process tool comprises alithography tool.
 2663. The method of claim 2633, wherein the system iscoupled to a lithography tool, the method further comprising controllingthe system to determine the flatness measurement of the specimen priorto an exposure step of the lithography process and controlling thesystem to determine the overlay misregistration subsequent to theexposure step of the lithography process.
 2664. The method of claim2633, wherein the stage and the measurement device are coupled to aprocess tool, the method further comprising controlling a wafer handlerto move the specimen from the process tool to the stage, and wherein thewafer handler is coupled to the process tool.
 2665. The method of claim2633, wherein the stage and the measurement device are coupled to aprocess tool, the method further comprising controlling the stage tomove the specimen from the system to the process tool.
 2666. The methodof claim 2633, wherein the stage and the measurement device are coupledto a process tool, the method further comprising controlling a waferhandler to move the specimen from the process tool to the stage suchthat at least the two properties of the specimen can be determined whilethe specimen is waiting between process steps.
 2667. The method of claim2633, wherein the stage and the measurement device are coupled to aprocess tool, wherein the process tool comprises a support deviceconfigured to support the specimen during a process step, and wherein anupper surface of the support device is substantially parallel to anupper surface of the stage.
 2668. The method of claim 2633, wherein thestage and the measurement device are coupled to a process tool, whereinthe process tool comprises a support device configured to support thespecimen during a process step, and wherein an upper surface of thestage is angled with respect to an upper surface of the support device.2669. The method of claim 2633, wherein the stage and the measurementdevice are disposed within a measurement chamber, and wherein themeasurement chamber is coupled to a process tool.
 2670. The method ofclaim 2633, wherein the stage and the measurement device are disposedwithin a measurement chamber, and wherein the measurement chamber isdisposed within a process tool.
 2671. The method of claim 2633, whereinthe stage and the measurement device are disposed within a measurementchamber, and wherein the measurement chamber is arranged laterallyproximate to a process chamber of a process tool.
 2672. The method ofclaim 2633, wherein the stage and the measurement device are disposedwithin a measurement chamber, and wherein the measurement chamber isarranged vertically proximate to a process chamber of a process tool.2673. The method of claim 2633, further comprising disposing thespecimen upon a support device disposed within a process chamber of aprocess tool, and wherein the support device is configured to supportthe specimen during a process step.
 2674. The method of claim 2673,further comprising controlling the illumination system and controllingthe detection system during the process step to obtain a signaturecharacterizing the process step, wherein the signature comprises atleast one singularity representative of an end of the process step.2675. The method of claim 2673, further comprising controlling theillumination system and controlling the detection system during theprocess step to alter a parameter of one or more instruments coupled tothe process tool in response to at least one of the determinedproperties using an in situ control technique.
 2676. The method of claim2633, further comprising controlling the stage to move the specimen froma first process chamber to a second process chamber, wherein the firstprocess chamber and the second process chamber are disposed within aprocess tool.
 2677. The method of claim 2676, further comprisingcontrolling the illumination system and controlling the detection systemduring said moving the specimen from the first process chamber to thesecond process chamber.
 2678. The method of claim 2633, furthercomprising comparing at least one of the determined properties of thespecimen and determined properties of a plurality of specimens. 2679.The method of claim 2633, further comprising comparing at least one ofthe determined properties of the specimen to a predetermined range forthe property.
 2680. The method of claim 2679, further comprisinggenerating an output signal if at least one of the determined propertiesof the specimen is outside of the predetermined range for the property.2681. The method of claim 2633, further comprising altering a samplingfrequency of the measurement device in response to at least one of thedetermined properties of the specimen.
 2682. The method of claim 2633,further comprising altering a parameter of one or more instrumentscoupled to the measurement device in response to at least one of thedetermined properties using a feedback control technique.
 2683. Themethod of claim 2633, further comprising altering a parameter of one ormore instruments coupled to the measurement device in response to atleast one of the determined properties using a feedforward controltechnique.
 2684. The method of claim 2633, further comprising generatinga database, wherein the database comprises the determined first andsecond properties of the specimen, the method further comprisingcalibrating the measurement device using the database.
 2685. The methodof claim 2633, further comprising generating a database, wherein thedatabase comprises the determined first and second properties of thespecimen, the method further comprising monitoring output signals of themeasurement device using the database.
 2686. The method of claim 2633,further comprising generating a database, wherein the database comprisesthe determined first and second properties of the specimen, and whereinthe database further comprises determined first and second properties ofa plurality of specimens.
 2687. The method of claim 2686, wherein thedetermined first and second properties of the plurality of specimens aregenerated using a plurality of measurement devices, the method furthercomprising calibrating the plurality of measurement devices using thedatabase.
 2688. The method of claim 2686, wherein the determined firstand second properties of the plurality of specimens are generated usinga plurality of measurement devices, the method further comprisingmonitoring output signals of the plurality of measurement devices usingthe database.
 2689. The method of claim 2633, wherein a stand alonesystem is coupled to the system, the method further comprisingcontrolling the stand alone system to calibrate the stand alone systemwith a calibration standard and further controlling the stand alonesystem to calibrate the system.
 2690. The method of claim 2633, whereina stand alone system is coupled to the system and at least oneadditional system, the method further comprising controlling the standalone system to calibrate the stand alone system with a calibrationstandard and further controlling the stand alone system to calibrate thesystem and at least the one additional system.
 2691. The method of claim2633, wherein the system is further configured to determine at least thetwo properties of the specimen at more than one position on thespecimen, and wherein the specimen comprises a wafer, the method furthercomprising altering at least one parameter of one or more instrumentscoupled to a process tool in response to at least one of the determinedproperties of the specimen at the more than one position on the specimento reduce within wafer variation of at least one of the determinedproperties.
 2692. The method of claim 2633, further comprising alteringa parameter of one or more instruments coupled to a process tool inresponse to at least one of the determined properties using a feedbackcontrol technique.
 2693. The method of claim 2633, further comprisingaltering a parameter of one or more instruments coupled to a processtool in response to at least one of the determined properties using afeedforward control technique.
 2694. The method of claim 2633, furthercomprising monitoring a parameter of one or more instruments coupled toa process tool.
 2695. The method of claim 2694, further comprisingdetermining a relationship between at least one of the determinedproperties and at least one of the monitored parameters.
 2696. Themethod of claim 2695, further comprising altering a parameter of atleast one of the instruments in response to the relationship.
 2697. Themethod of claim 2633, further comprising altering a parameter of one ormore instruments coupled to a plurality of process tools in response toat least one of the determined properties of the specimen.
 2698. Themethod of claim 2633, wherein processing the one or more output signalscomprises: at least partially processing the one or more output signalsusing a local processor, wherein the local processor is coupled to themeasurement device; sending the partially processed one or more outputsignals from the local processor to a remote controller computer; andfurther processing the partially processed one or more output signalsusing the remote controller computer.
 2699. The method of claim 2698,wherein at least partially processing the one or more output signalscomprises determining the first and second properties of the specimen.2700. The method of claim 2698, wherein further processing the partiallyprocessed one or more output signals comprises determining the first andsecond properties of the specimen.
 2701. A semiconductor devicefabricated by a method, the method comprising: forming a portion of thesemiconductor device upon a specimen; disposing the specimen upon astage, wherein the stage is coupled to a measurement device, and whereinthe measurement device comprises an illumination system and a detectionsystem; directing energy toward a surface of the specimen using theillumination system; detecting energy propagating from the surface ofthe specimen using the detection system; generating one or more outputsignals responsive to the detected energy; and processing the one ormore output signals to determine a first property and a second propertyof the specimen, wherein the first property comprises overlaymisregistration of the specimen, and wherein the second propertycomprises a flatness measurement of the specimen.
 2702. The device ofclaim 2701, wherein the illumination system comprises a single energysource.
 2703. The device of claim 2701, wherein the illumination systemcomprises more than one energy source.
 2704. The device of claim 2701,wherein the detection system comprises a single energy sensitive device.2705. The device of claim 2701, wherein the detection system comprisesmore than one energy sensitive devices.
 2706. The device of claim 2701,wherein the measurement device is selected from the group consisting ofa coherence probe microscope, an interferometer, an opticalprofilometer, a spectroscopic reflectometer, a spectroscopicellipsometer, a dual beam spectrophotometer, a beam profileellipsometer, a non-imaging scatterometer, a scatterometer, aspectroscopic scatterometer, a reflectometer, a bright field imagingdevice, a dark field imaging device, and a bright field and dark fieldimaging device.
 2707. The device of claim 2701, wherein the measurementdevice further comprises at least a first measurement device and asecond measurement device, and wherein the first and second measurementdevices are selected from the group consisting of a coherence probemicroscope, an interferometer, an optical profilometer, a spectroscopicreflectometer, a spectroscopic ellipsometer, a dual beamspectrophotometer, a beam profile ellipsometer, a non-imagingscatterometer, a scatterometer, a spectroscopic scatterometer, areflectometer, a bright field imaging device, a dark field imagingdevice, and a bright field and dark field imaging device.
 2708. Thedevice of claim 2701, wherein the measurement device further comprisesat least a first measurement device and a second measurement device, andwherein optical elements of the first measurement device compriseoptical elements of the second measurement device.
 2709. The device ofclaim 2701, wherein the stage and the measurement device are coupled toa process tool.
 2710. The device of claim 2701, wherein the stage andthe measurement device are coupled to a process tool, and wherein theprocess tool comprises a lithography tool.
 2711. The device of claim2701, wherein the stage and the measurement device are coupled to alithography tool, the method further comprising determining the flatnessmeasurement of the specimen prior to an exposure step of the lithographyprocess and determining the overlay misregistration subsequent to theexposure step of the lithography process.
 2712. A method for fabricatinga semiconductor device, comprising: forming a portion of thesemiconductor device upon a specimen; disposing the specimen upon astage, wherein the stage is coupled to a measurement device, and whereinthe measurement device comprises an illumination system and a detectionsystem; directing energy toward a surface of the specimen using theillumination system; detecting energy propagating from the surface ofthe specimen using the detection system; generating one or more outputsignals responsive to the detected energy; and processing the one ormore output signals to determine a first property and a second propertyof the specimen, wherein the first property comprises overlaymisregistration of the specimen, and wherein the second propertycomprises a flatness measurement of the specimen.
 2713. The method ofclaim 2712, wherein the illumination system comprises a single energysource.
 2714. The method of claim 2712, wherein the illumination systemcomprises more than one energy source.
 2715. The method of claim 2712,wherein the detection system comprises a single energy sensitive device.2716. The method of claim 2712, wherein the detection system comprisesmore than one energy sensitive devices.
 2717. The method of claim 2712,wherein the measurement device is selected from the group consisting ofa coherence probe microscope, an interferometer, an opticalprofilometer, a spectroscopic reflectometer, a spectroscopicellipsometer, a dual beam spectrophotometer, a beam profileellipsometer, a non-imaging scatterometer, a scatterometer, aspectroscopic scatterometer, a reflectometer, a bright field imagingdevice, a dark field imaging device, and a bright field and dark fieldimaging device.
 2718. The method of claim 2712, wherein the measurementdevice further comprises at least a first measurement device and asecond measurement device, and wherein the first and second measurementdevices are selected from the group consisting of a coherence probemicroscope, an interferometer, an optical profilometer, a spectroscopicreflectometer, a spectroscopic ellipsometer, a dual beamspectrophotometer, a beam profile ellipsometer, a non-imagingscatterometer, a scatterometer, a spectroscopic scatterometer, areflectometer, a bright field imaging device, a dark field imagingdevice, and a bright field and dark field imaging device.
 2719. Themethod of claim 2712, wherein the measurement device further comprisesat least a first measurement device and a second measurement device, andwherein optical elements of the first measurement device compriseoptical elements of the second measurement device.
 2720. The method ofclaim 2712, wherein the stage and the measurement device are coupled toa process tool.
 2721. The method of claim 2712, wherein the stage andthe measurement device are coupled to a process tool, and wherein theprocess tool comprises a lithography tool.
 2722. The method of claim2712, wherein the stage and the measurement device are coupled to alithography tool, the method further comprising determining the flatnessmeasurement of the specimen prior to an exposure step of the lithographyprocess and determining the overlay misregistration subsequent to theexposure step of the lithography process.
 2723. A system configured todetermine at least two properties of a specimen during use, comprising:a stage configured to support the specimen during use; a measurementdevice coupled to the stage, comprising: an illumination systemconfigured to direct energy toward a surface of the specimen during use;and a detection system coupled to the illumination system and configuredto detect energy propagating from the surface of the specimen duringuse, wherein the measurement device is configured to generate one ormore output signals responsive to the detected energy during use; alocal processor coupled to the measurement device and configured to atleast partially process the one or more output signals during use; and aremote controller computer coupled to the local processor, wherein theremote controller computer is configured to receive the at leastpartially processed one or more output signals and to determine a firstproperty and a second property of the specimen from the at leastpartially processed one or more output signals during use, wherein thefirst property comprises overlay misregistration of the specimen, andwherein the second property comprises a flatness measurement of thespecimen.
 2724. The system of claim 2723, wherein the measurement deviceis selected from the group consisting of a coherence probe microscope,an interferometer, an optical profilometer, a spectroscopicreflectometer, a spectroscopic ellipsometer, a dual beamspectrophotometer, a beam profile ellipsometer, a non-imagingscatterometer, a scatterometer, a spectroscopic scatterometer, areflectometer, a bright field imaging device, a dark field imagingdevice, and a bright field and dark field imaging device.
 2725. Thesystem of claim 2723, wherein the measurement device further comprisesat least a first measurement device and a second measurement device, andwherein the first and second measurement devices are selected from thegroup consisting of a coherence probe microscope, an interferometer, anoptical profilometer, a spectroscopic reflectometer, a spectroscopicellipsometer, a dual beam spectrophotometer, a beam profileellipsometer, a non-imaging scatterometer, a scatterometer, aspectroscopic scatterometer, a reflectometer, a bright field imagingdevice, a dark field imaging device, and a bright field and dark fieldimaging device.
 2726. The system of claim 2723, wherein the measurementdevice further comprises at least a first measurement device and asecond measurement device, and wherein optical elements of the firstmeasurement device comprise optical elements of the second measurementdevice.
 2727. The system of claim 2723, wherein the remote controllercomputer is further coupled to a process tool.
 2728. The system of claim2723, wherein the remote controller computer is further coupled to aprocess tool, and wherein the process tool comprises a lithography tool.2729. The system of claim 2723, wherein the system is coupled to alithography tool, wherein the system is configured to determine theflatness measurement of the specimen prior to an exposure step of thelithography process, and wherein the system is configured to determinethe overlay misregistration subsequent to the exposure step of thelithography process.
 2730. The system of claim 2723, wherein the remotecontroller computer is further coupled to a process tool, and whereinthe remote controller computer is further configured to alter aparameter of one or more instruments coupled to the process tool inresponse to at least one of the determined properties using a feedbackcontrol technique during use.
 2731. The system of claim 2723, whereinthe remote controller computer is further coupled to a process tool, andwherein the remote controller computer is further configured to alter aparameter of one or more instruments coupled to the process tool inresponse to at least one of the determined properties using afeedforward control technique during use.
 2732. The system of claim2723, wherein the remote controller computer is further coupled to aprocess tool, and wherein the remote controller computer is furtherconfigured to monitor a parameter of one or more instruments coupled tothe process tool during use.
 2733. The system of claim 2732, wherein theremote controller computer is further configured to determine arelationship between at least one of the determined properties and atleast one of the monitored parameters during use.
 2734. The system ofclaim 2733, wherein the remote controller computer is further configuredto alter a parameter of one or more instruments in response to therelationship during use.
 2735. The system of claim 2723, wherein theillumination system is further configured to direct energy toward thesurface of the specimen during a process step, wherein the detectionsystem is further configured to detect energy propagating from thesurface of the specimen during the process step, and wherein the remotecontroller computer is further configured to determine the first andsecond properties of the specimen during the process step.
 2736. Thesystem of claim 2735, wherein the remote controller computer is furtherconfigured to obtain a signature characterizing the process step duringuse, and wherein the signature comprises at least one singularityrepresentative of an end of the process step.
 2737. The system of claim2735, wherein the remote controller computer is further configured toalter a parameter of one or more instruments coupled to the process toolin response to at least one of the determined properties using an insitu control technique during use.
 2738. The system of claim 2723,wherein a process tool comprises a first process chamber and a secondprocess chamber, and wherein the stage is further configured to move thespecimen from the first process chamber to the second process chamberduring use.
 2739. The system of claim 2723, wherein the illuminationsystem is further configured to direct energy toward the surface of thespecimen during said moving, wherein the detection system is furtherconfigured to detect energy propagating from the surface of the specimenduring said moving, and wherein the remote controller computer isfurther configured to determine the first and second properties of thespecimen during said moving.
 2740. The system of claim 2723, wherein theremote controller computer is further configured to compare at least oneof the determined properties of the specimen and properties of aplurality of specimens during use.
 2741. The system of claim 2723,wherein the remote controller computer is further configured to compareat least one of the determined properties of the specimen to apredetermined range for the property during use.
 2742. The system ofclaim 2741, wherein the remote controller computer is further configuredto generate an output signal if at least one of the determinedproperties of the specimen is outside of the predetermined range for theproperty during use.
 2743. The system of claim 2723, wherein the remotecontroller computer is further configured to alter a sampling frequencyof the measurement device in response to at least one of the determinedproperties of the specimen during use.
 2744. The system of claim 2723,wherein the remote controller computer is further configured to alter aparameter of one or more instruments coupled to the measurement devicein response to at least one of the determined properties using afeedback control technique during use.
 2745. The system of claim 2723,wherein the remote controller computer is further configured to alter aparameter of one or more instruments coupled to the measurement devicein response to at least one of the determined properties using afeedforward control technique during use.
 2746. The system of claim2723, wherein the remote controller computer is further configured togenerate a database during use, and wherein the database comprises thedetermined first and second properties of the specimen.
 2747. The systemof claim 2723, wherein the remote controller computer is furtherconfigured to generate a database during use, wherein the databasecomprises the determined first and second properties of the specimen,and wherein the remote controller computer is further configured tocalibrate the measurement device using the database during use. 2748.The system of claim 2723, wherein the remote controller computer isfurther configured to generate a database during use, wherein thedatabase comprises the determined first and second properties of thespecimen, and wherein the remote controller computer is furtherconfigured to monitor output signals generated by measurement deviceusing the database during use.
 2749. The system of claim 2723, whereinthe remote controller computer is further configured to generate adatabase during use, wherein the database comprises the determined firstand second properties of the specimen, and wherein the database furthercomprises first and second properties of a plurality of specimens. 2750.The system of claim 2749, wherein the first and second properties of theplurality of specimens are determined using a plurality of measurementdevices, wherein the remote controller computer is further coupled tothe plurality of measurement devices, and wherein the remote controllercomputer is further configured to calibrate the plurality of measurementdevices using the database during use.
 2751. The system of claim 2749,wherein the first and second properties of the plurality of specimensare determined using a plurality of measurement devices, wherein theremote controller computer is further coupled to the plurality ofmeasurement devices, and wherein the remote controller computer isfurther configured to calibrate the plurality of measurement devicesusing the database during use.
 2752. The system of claim 2723, whereinthe remote controller computer is further coupled to a plurality ofmeasurement devices, and wherein the plurality of measurement devices iscoupled to at least one of a plurality of process tools.
 2753. Thesystem of claim 2723, wherein the remote controller computer is furthercoupled to a plurality of process tools, and wherein the remotecontroller computer is further configured to alter a parameter of one ormore instruments coupled to the plurality of process tools during use.2754. A method for determining at least two properties of a specimen,comprising: disposing the specimen upon a stage, wherein the stage iscoupled to a measurement device, and wherein the measurement devicecomprises an illumination system and a detection system; directingenergy toward a surface of the specimen using the illumination system;detecting energy propagating from the surface of the specimen using thedetection system; generating one or more output signals responsive tothe detected energy; and processing the one or more output signals todetermine a first property and a second property of the specimen,wherein the first property comprises overlay misregistration of thespecimen, and wherein the second property comprises a flatnessmeasurement of the specimen, comprising: at least partially processingthe one or more output signals using a local processor, wherein thelocal processor is coupled to the measurement device; sending thepartially processed one or more output signals from the local processorto a remote controller computer; and further processing the partiallyprocessed one or more output signals using the remote controllercomputer.
 2755. The method of claim 2754, wherein the measurement deviceis selected from the group consisting of a coherence probe microscope,an interferometer, an optical profilometer, a spectroscopicreflectometer, a spectroscopic ellipsometer, a dual beamspectrophotometer, a beam profile ellipsometer, a non-imagingscatterometer, a scatterometer, a spectroscopic scatterometer, areflectometer, a bright field imaging device, a dark field imagingdevice, and a bright field and dark field imaging device.
 2756. Themethod of claim 2754, wherein the measurement device further comprisesat least a first measurement device and a second measurement device, andwherein the first and second measurement devices are selected from thegroup consisting of a coherence probe microscope, an interferometer, anoptical profilometer, a spectroscopic reflectometer, a spectroscopicellipsometer, a dual beam spectrophotometer, a beam profileellipsometer, a non-imaging scatterometer, a scatterometer, aspectroscopic scatterometer, a reflectometer, a bright field imagingdevice, a dark field imaging device, and a bright field and dark fieldimaging device.
 2757. The method of claim 2754, wherein the measurementdevice further comprises at least a first measurement device and asecond measurement device, and wherein optical elements of the firstmeasurement device comprise optical elements of the second measurementdevice.
 2758. The method of claim 2754, wherein the remote controllercomputer is further coupled to a process tool.
 2759. The method of claim2754, wherein the remote controller computer is further coupled to aprocess tool, and wherein the process tool is comprises a lithographytool.
 2760. The method of claim 2754, wherein the stage and themeasurement device are coupled to a lithography tool, the method furthercomprising determining the flatness measurement of the specimen prior toan exposure step of the lithography process and determining the overlaymisregistration subsequent to the exposure step of the lithographyprocess.
 2761. The method of claim 2754, wherein the remote controllercomputer is further coupled to a process tool, the method furthercomprising altering a parameter of one or more instruments coupled tothe process tool using the remote controller computer in response to atleast one of the determined properties of the specimen using a feedbackcontrol technique.
 2762. The method of claim 2754, wherein the remotecontroller computer is further coupled to a process tool, the methodfurther comprising altering a parameter of one or more instrumentscoupled to the process tool using the remote controller computer inresponse to at least one of the determined properties of the specimenusing a feedforward control technique.
 2763. The method of claim 2754,wherein the remote controller computer is further coupled to a processtool, the method further comprising monitoring a parameter of one ormore instruments coupled to the process tool using the remote controllercomputer.
 2764. The method of claim 2763, further comprising determininga relationship between at least one of the determined properties and atleast one of the monitored parameters using the remote controllercomputer.
 2765. The method of claim 2764, further comprising altering aparameter of one or more instruments coupled to the process tool inresponse to the relationship using the remote controller computer. 2766.The method of claim 2754, wherein the illumination system and thedetection system are coupled to a process chamber of a process tool, themethod further comprising performing said directing and said detectingduring a process step.
 2767. The method of claim 2766, furthercomprising obtaining a signature characterizing the process step usingthe remote controller computer, wherein the signature comprises at leastone singularity representative of an end of the process step.
 2768. Themethod of claim 2766, further comprising altering a parameter of one ormore instruments coupled to the process tool using the remote controllercomputer in response to at least one of the determined properties usingan in situ control technique.
 2769. The method of claim 2754, furthercomprising: moving the specimen from a first process chamber to a secondprocess chamber using the stage; and performing said directing and saiddetecting during said moving the specimen.
 2770. The method of claim2754, further comprising comparing at least one of the determinedproperties of the specimen and determined properties of a plurality ofspecimens using the remote controller computer.
 2771. The method ofclaim 2754, further comprising comparing at least one of the determinedproperties of the specimen to a predetermined range for the propertyusing the remote controller computer.
 2772. The method of claim 2771,further comprising generating an output signal using the remotecontroller computer if at least one of the determined properties of thespecimen is outside of the predetermined range for the property. 2773.The method of claim 2754, further comprising altering a samplingfrequency of the measurement device in response to at least one of thedetermined properties of the specimen.
 2774. The method of claim 2754,further comprising altering a parameter of one or more instrumentscoupled to the measurement device using the remote controller computerin response to at least one of the determined properties using afeedback control technique.
 2775. The method of claim 2754, furthercomprising altering a parameter of one or more instruments coupled tothe measurement device using the remote controller computer in responseto at least one of the determined properties using a feedforward controltechnique.
 2776. The method of claim 2754, further comprising generatinga database using the remote controller computer, wherein the databasecomprises the determined first and second properties of the specimen,the method further comprising calibrating the measurement device usingthe remote controller computer and the database.
 2777. The method ofclaim 2754, further comprising generating a database using the remotecontroller computer, wherein the database comprises the determined firstand second properties of the specimen, the method further comprisingmonitoring the measurement device using the remote controller computerand the database.
 2778. The method of claim 2754, further comprisinggenerating a database using the remote controller computer, wherein thedatabase comprises the determined first and second properties of thespecimen, and wherein the database further comprises first and secondproperties of a plurality of specimens.
 2779. The method of claim 2778,wherein the first and second properties of the plurality of specimensare generated using a plurality of measurement devices, the methodfurther comprising calibrating the plurality of measurement devicesusing the remote controller computer and the database.
 2780. The methodof claim 2778, wherein the first and second properties of the pluralityof specimens are generated using a plurality of measurement devices, themethod further comprising monitoring output signals of the plurality ofmeasurement devices using the remote controller computer and thedatabase.
 2781. The method of claim 2754, further comprising sending theat least partially processed one or more output signals from a pluralityof local processors to the remote controller computer, wherein each ofthe plurality of local processors is coupled to one of a plurality ofmeasurement devices.
 2782. The method of claim 2781, wherein at leastone of the plurality of measurement devices is coupled to a processtool.
 2783. The method of claim 2782, further comprising altering aparameter of one or more instruments coupled to the process tool usingthe remote controller computer in response to at least one of thedetermined properties of the specimen.
 2784. A system configured todetermine at least two properties of a specimen during use, comprising:a stage configured to support the specimen during use; a measurementdevice coupled to the stage, comprising: an illumination systemconfigured to direct energy toward a surface of the specimen during use;and a detection system coupled to the illumination system and configuredto detect energy propagating from the surface of the specimen duringuse, wherein the measurement device is configured to generate one ormore output signals responsive to the detected energy during use; and aprocessor coupled to the measurement device and configured to determinea first property and a second property of the specimen from the one ormore output signals during use, wherein the first property comprises acharacteristic of an implanted region of the specimen, and wherein thesecond property comprises a presence of defects on the specimen. 2785.The system of claim 2784, wherein the stage is further configured tomove laterally during use.
 2786. The system of claim 2784, wherein thestage is further configured to move rotatably during use.
 2787. Thesystem of claim 2784, wherein the stage is further configured to movelaterally and rotatably during use.
 2788. The system of claim 2784,wherein the illumination system comprises a single energy source. 2789.The system of claim 2784, wherein the illumination system comprises morethan one energy source.
 2790. The system of claim 2784, wherein thedetection system comprises a single energy sensitive device.
 2791. Thesystem of claim 2784, wherein the detection system comprises more thanone energy sensitive devices.
 2792. The system of claim 2784, whereinthe measurement device further comprises a modulated opticalreflectometer.
 2793. The system of claim 2784, wherein the measurementdevice further comprises an X-ray reflectance device.
 2794. The systemof claim 2784, wherein the measurement device further comprises an eddycurrent device.
 2795. The system of claim 2784, wherein the measurementdevice further comprises a photo-acoustic device.
 2796. The system ofclaim 2784, wherein the measurement device further comprises aspectroscopic ellipsometer.
 2797. The system of claim 2784, wherein themeasurement device further comprises a spectroscopic reflectometer.2798. The system of claim 2784, wherein the measurement device furthercomprises a dual beam spectrophotometer.
 2799. The system of claim 2784,wherein the measurement device further comprises a non-imagingscatterometer.
 2800. The system of claim 2784, wherein the measurementdevice further comprises a scatterometer.
 2801. The system of claim2784, wherein the measurement device further comprises a spectroscopicscatterometer.
 2802. The system of claim 2784, wherein the measurementdevice further comprises a reflectometer.
 2803. The system of claim2784, wherein the measurement device further comprises an ellipsometer.2804. The system of claim 2784, wherein the measurement device furthercomprises a non-imaging bright field device.
 2805. The system of claim2784, wherein the measurement device further comprises a non-imagingdark field device.
 2806. The system of claim 2784, wherein themeasurement device further comprises a non-imaging bright field and darkfield device.
 2807. The system of claim 2784, wherein the measurementdevice further comprises a bright field imaging device.
 2808. The systemof claim 2784, wherein the measurement device further comprises a darkfield imaging device.
 2809. The system of claim 2784, wherein themeasurement device further comprises a bright field and dark fieldimaging device.
 2810. The system of claim 2784, wherein the measurementdevice further comprises at least a first measurement device and asecond measurement device, and wherein the first and second measurementdevices are selected from the group consisting of a modulated opticalreflectometer, an X-ray reflectance device, an eddy current device, aphoto-acoustic device, a spectroscopic ellipsometer, a spectroscopicreflectometer, dual beam spectrophotometer, a non-imaging scatterometer,a scatterometer, a spectroscopic scatterometer, a reflectometer, anellipsometer, a non-imaging bright field device, a non-imaging darkfield device, a non-imaging bright field and dark field device, a brightfield imaging device, a dark field imaging device, and a bright fieldand dark field imaging device.
 2811. The system of claim 2784, whereinthe measurement device further comprises at least a first measurementdevice and a second measurement device, and wherein optical elements ofthe first measurement device comprise optical elements of the secondmeasurement device.
 2812. The system of claim 2784, wherein themeasurement device further comprises non-optical components, and whereinthe detected energy is responsive to a non-optical characteristic of thespecimen.
 2813. The system of claim 2784, wherein the characteristic ofthe implanted region is selected from the group consisting of a presenceof ions in the implanted region, a concentration of ions in theimplanted region, a depth of the implanted region, and a distributionprofile of the implanted region.
 2814. The system of claim 2784, whereinthe defects comprise micro defects and macro defects.
 2815. The systemof claim 2784, wherein the defects comprises micro defects or macrodefects.
 2816. The system of claim 2784, wherein the illumination systemis further configured to direct energy toward a bottom surface of thespecimen during use, wherein the detection system is further configuredto detect energy propagating from the bottom surface of the specimenduring use, and wherein the second property further comprises a presenceof defects on the bottom surface of the specimen.
 2817. The system ofclaim 2816, wherein the defects comprise macro defects.
 2818. The systemof claim 2784, wherein the system is further configured to determine atleast the two properties of the specimen substantially simultaneouslyduring use.
 2819. The system of claim 2784, wherein the illuminationsystem is further configured to direct energy to multiple locations onthe surface of the specimen substantially simultaneously, and whereinthe detection system is further configured to detect energy propagatingfrom the multiple locations on the surface of the specimen substantiallysimultaneously such that one or more of the at least two properties ofthe specimen can be determined at the multiple locations substantiallysimultaneously.
 2820. The system of claim 2784, wherein the system iscoupled to a process tool.
 2821. The system of claim 2784, wherein thesystem is coupled to a process tool, and wherein the system is disposedwithin the process tool.
 2822. The system of claim 2784, wherein thesystem is coupled to a process tool, and wherein the system is arrangedlaterally proximate to the process tool.
 2823. The system of claim 2784,wherein the system is coupled to a process tool, and wherein the processtool comprises a wafer handler configured to move the specimen to thestage during use.
 2824. The system of claim 2784, wherein the system iscoupled to a process tool, and wherein the stage is configured to movethe specimen from the system to the process tool during use.
 2825. Thesystem of claim 2784, wherein the system is coupled to a process tool,and wherein the stage is further configured to move the specimen to aprocess chamber of the process tool during use.
 2826. The system ofclaim 2784, wherein the system is coupled to a process tool, and whereinthe system is further configured to determine at least the twoproperties of the specimen while the specimen is waiting between processsteps.
 2827. The system of claim 2784, wherein the system is coupled toa process tool, wherein the process tool comprises a support deviceconfigured to support the specimen during a process step, and wherein anupper surface of the support device is substantially parallel to anupper surface of the stage.
 2828. The system of claim 2784, wherein thesystem is coupled to a process tool, wherein the process tool comprisesa support device configured to support the specimen during a processstep, and wherein an upper surface of the stage is angled with respectto an upper surface of the support device.
 2829. The system of claim2784, wherein the system is coupled to a process tool, and wherein theprocess tool is selected from the group consisting of an ion implanterand a thermal tool.
 2830. The system of claim 2784, wherein the systemfurther comprises a measurement chamber, wherein the stage and themeasurement device are disposed within the measurement chamber, andwherein the measurement chamber is coupled to a process tool.
 2831. Thesystem of claim 2784, wherein the system further comprises a measurementchamber, wherein the stage and the measurement device are disposedwithin the measurement chamber, and wherein the measurement chamber isdisposed within a process tool.
 2832. The system of claim 2784, whereinthe system further comprises a measurement chamber, wherein the stageand the measurement device are disposed within the measurement chamber,and wherein the measurement chamber is arranged laterally proximate to aprocess chamber of a process tool.
 2833. The system of claim 2784,wherein the system further comprises a measurement chamber, wherein thestage and the measurement device are disposed within the measurementchamber, and wherein the measurement chamber is arranged verticallyproximate to a process chamber of a process tool.
 2834. The system ofclaim 2784, wherein a process tool comprises a process chamber, whereinthe stage is disposed within the process chamber, and wherein the stageis further configured to support the specimen during a process step.2835. The system of claim 2834, wherein the processor is furtherconfigured to determine at least the two properties of the specimenduring the process step.
 2836. The system of claim 2835, wherein theprocessor is further configured to obtain a signature characterizing theprocess step during use, and wherein the signature comprises at leastone singularity representative of an end of the process step.
 2837. Thesystem of claim 2835, wherein the processor is further coupled to theprocess tool and is further configured to alter a parameter of one ormore instruments coupled to the process tool in response to at least oneof the determined properties using an in situ control technique duringuse.
 2838. The system of claim 2784, wherein a process tool comprises afirst process chamber and a second process chamber, and wherein thestage is further configured to move the specimen from the first processchamber to the second process chamber during use.
 2839. The system ofclaim 2838, wherein the system is further configured to determine atleast the two properties of the specimen as the stage is moving thespecimen from the first process chamber to the second process chamber.2840. The system of claim 2784, wherein the processor is furtherconfigured to compare at least one of the determined properties of thespecimen and properties of a plurality of specimens during use. 2841.The system of claim 2784, wherein the processor is further configured tocompare at least one of the determined properties of the specimen to apredetermined range for the property during use.
 2842. The system ofclaim 2841, wherein the processor is further configured to generate anoutput signal if at least one of the determined properties of thespecimen is outside of the predetermined range for the property duringuse.
 2843. The system of claim 2784, wherein the processor is furtherconfigured to alter a sampling frequency of the measurement device inresponse to t at least one of the determined properties of the specimenduring use.
 2844. The system of claim 2784, wherein the processor isfurther configured to alter a parameter of one or more instrumentscoupled to the measurement device in response to at least one of thedetermined properties using a feedback control technique during use.2845. The system of claim 2784, wherein the processor is furtherconfigured to alter a parameter of one or more instruments coupled tothe measurement device in response to at least one of the determinedproperties using a feedforward control technique during use.
 2846. Thesystem of claim 2784, wherein the processor is further configured togenerate a database during use, wherein the database comprises thedetermined first and second properties of the specimen.
 2847. The systemof claim 2784, wherein the processor is further configured to generate adatabase during use, wherein the database comprises the determined firstand second properties of the specimen, and wherein the processor isfurther configured to calibrate the measurement device using thedatabase during use.
 2848. The system of claim 2784, wherein theprocessor is further configured to generate a database during use,wherein the database comprises the determined first and secondproperties of the specimen, and wherein the processor is furtherconfigured to monitor output signals generated by measurement deviceusing the database during use.
 2849. The system of claim 2784, whereinthe processor is further configured to generate a database during use,wherein the database comprises the determined first and secondproperties of the specimen, and wherein the database further comprisesfirst and second properties of a plurality of specimens.
 2850. Thesystem of claim 2849, wherein the first and second properties of theplurality of specimens are determined using a plurality of measurementdevices, wherein the processor is further coupled to the plurality ofmeasurement devices, and wherein the processor is further configured tocalibrate the plurality of measurement devices using the database duringuse.
 2851. The system of claim 2849, wherein the first and secondproperties of the plurality of specimens are determined using aplurality of measurement devices, wherein the processor is furthercoupled to the plurality of measurement devices, and wherein theprocessor is further configured to monitor output signals generated bythe plurality of measurement devices using the database during use.2852. The system of claim 2784, further comprising a stand alone systemcoupled to the system, wherein the stand alone system is configured tobe calibrated with a calibration standard during use, and wherein thestand alone system is further configured to calibrate the system duringuse.
 2853. The system of claim 2784, further comprising a stand alonesystem coupled the system and at least one additional system, whereinthe stand alone system is configured to be calibrated with a calibrationstandard during use, and wherein the stand alone system is furtherconfigured to calibrate the system and at least the one additionalsystem during use.
 2854. The system of claim 2784, wherein the system isfurther configured to determine at least the two properties of thespecimen at more than one position on the specimen, wherein the specimencomprises a wafer, and wherein the processor is configured to alter atleast one parameter of one or more instruments coupled to a process toolin response to at least one of the determined properties of the specimenat the more than one position on the specimen to reduce within wafervariation of at least one of the determined properties.
 2855. The systemof claim 2784, wherein the processor is further coupled to a processtool, and wherein the processor is further configured to alter aparameter of one or more instruments coupled to the process tool inresponse to at least one of the determined properties using a feedbackcontrol technique during use.
 2856. The system of claim 2784, whereinthe processor is further coupled to a process tool, and wherein theprocessor is further configured to alter a parameter of one or moreinstruments coupled to the process tool in response to at least one ofthe determined properties using a feedforward control technique duringuse.
 2857. The system of claim 2784, wherein the processor is furthercoupled to a process tool, and wherein the processor is furtherconfigured to monitor a parameter of one or more instruments coupled tothe process tool during use.
 2858. The system of claim 2857, wherein theprocessor is further configured to determine a relationship between atleast one of the determined properties and at least one of the monitoredparameters during use.
 2859. The system of claim 2858, wherein theprocessor is further configured to alter a parameter of one or moreinstruments in response to the relationship during use.
 2860. The systemof claim 2784, wherein the processor is further coupled to a pluralityof measurement devices, and wherein the processor is further configuredto alter a parameter of one or more instruments coupled to at least oneof the plurality of measurement devices during use.
 2861. The system ofclaim 2784, wherein the processor is further coupled to a plurality ofmeasurement devices, and wherein at least one of the plurality ofmeasurement devices is coupled to at least one of a plurality of processtools.
 2862. The system of claim 2861, wherein the processor is furthercoupled to at least one of the plurality of process tools, and whereinthe processor is further configured to alter a parameter of one or moreinstruments coupled to at least one of the plurality of process toolsduring use.
 2863. The system of claim 2784, wherein the processorcomprises a local processor coupled to the measurement device and aremote controller computer coupled to the local processor, wherein thelocal processor is configured to at least partially process the one ormore output signals during use, and wherein the remote controllercomputer is configured to further process the at least partiallyprocessed one or more output signals during use.
 2864. The system ofclaim 2863, wherein the local processor is further configured todetermine the first property and the second property of the specimenduring use.
 2865. The system of claim 2863, wherein the remotecontroller computer is further configured to determine the firstproperty and the second property of the specimen during use.
 2866. Amethod for determining at least two properties of a specimen,comprising: disposing the specimen upon a stage, wherein the stage iscoupled to a measurement device, and wherein the measurement devicecomprises an illumination system and a detection system; directingenergy toward a surface of the specimen using the illumination system;detecting energy propagating from the surface of the specimen using thedetection system; generating one or more output signals responsive tothe detected energy; and processing the one or more output signals todetermine a first property and a second property of the specimen,wherein the first property comprises a characteristic of an implantedregion of the specimen, and wherein the second property comprises apresence of defects on the specimen.
 2867. The method of claim 2866,further comprising laterally moving the stage during said directingenergy and said detecting energy.
 2868. The method of claim 2866,further comprising rotatably moving the stage during said directingenergy and said detecting energy.
 2869. The method of claim 2866,further comprising laterally and rotatably moving the stage during saiddirecting energy and said detecting energy.
 2870. The method of claim2866, wherein the illumination system comprises a single energy source.2871. The method of claim 2866, wherein the illumination systemcomprises more than one energy source.
 2872. The method of claim 2866,wherein the detection system comprises a single energy sensitive device.2873. The method of claim 2866, wherein the detection system comprisesmore than one energy sensitive devices.
 2874. The method of claim 2866,wherein the measurement device further comprises a modulated opticalreflectometer.
 2875. The method of claim 2866, wherein the measurementdevice further comprises an X-ray reflectance device.
 2876. The methodof claim 2866, wherein the measurement device further comprises an eddycurrent device.
 2877. The method of claim 2866, wherein the measurementdevice further comprises a photo-acoustic device.
 2878. The method ofclaim 2866, wherein the measurement device further comprises aspectroscopic ellipsometer.
 2879. The method of claim 2866, wherein themeasurement device further comprises a spectroscopic reflectometer.2880. The method of claim 2866, wherein the measurement device furthercomprises a dual beam spectrophotometer.
 2881. The method of claim 2866,wherein the measurement device further comprises a non-imagingscatterometer.
 2882. The method of claim 2866, wherein the measurementdevice further comprises a scatterometer.
 2883. The method of claim2866, wherein the measurement device further comprises a spectroscopicscatterometer.
 2884. The method of claim 2866, wherein the measurementdevice further comprises a reflectometer.
 2885. The method of claim2866, wherein the measurement device further comprises an ellipsometer.2886. The method of claim 2866, wherein the measurement device furthercomprises a non-imaging bright field device.
 2887. The method of claim2866, wherein the measurement device further comprises a non-imagingdark field device.
 2888. The method of claim 2866, wherein themeasurement device further comprises a non-imaging bright field and darkfield device.
 2889. The method of claim 2866, wherein the measurementdevice further comprises a bright field imaging device.
 2890. The methodof claim 2866, wherein the measurement device further comprises a darkfield imaging device.
 2891. The method of claim 2866, wherein themeasurement device further comprises a bright field and dark fieldimaging device.
 2892. The method of claim 2866, wherein the measurementdevice further comprises at least a first measurement device and asecond measurement device, and wherein the first and second measurementdevices are selected from the group consisting of a modulated opticalreflectometer, an X-ray reflectance device, an eddy current device, aphoto-acoustic device, a spectroscopic ellipsometer, a spectroscopicreflectometer, dual beam spectrophotometer, a non-imaging scatterometer,a scatterometer, a spectroscopic scatterometer, a reflectometer, anellipsometer, a non-imaging bright field device, a non-imaging darkfield device, a non-imaging bright field and dark field device, a brightfield imaging device, a dark field imaging device, and a bright fieldand dark field imaging device.
 2893. The method of claim 2866, whereinthe measurement device further comprises at least a first measurementdevice and a second measurement device, and wherein optical elements ofthe first measurement device comprise optical elements of the secondmeasurement device.
 2894. The method of claim 2866, wherein themeasurement device further comprises non-optical components, and whereindetecting energy comprises measuring a nonoptical characteristic of thespecimen.
 2895. The method of claim 2866, wherein the characteristic ofthe implanted region is selected from the group consisting of a presenceof ions in the implanted region, a concentration of ions in theimplanted region, a depth of ions in the implanted region, and adistribution profile of the implanted region.
 2896. The method of claim2866, wherein the defects comprise micro defects and macro defects.2897. The method of claim 2866, wherein the defects comprises microdefects or macro defects.
 2898. The method of claim 2866, furthercomprising: directing energy toward a bottom surface of the specimen;and detecting energy propagating from the bottom surface of thespecimen, wherein the second property further comprises a presence ofdefects on the bottom surface of the specimen.
 2899. The method of claim2898, wherein the defects comprise macro defects.
 2900. The method ofclaim 2866, wherein processing the one or more output signals todetermine the first and second properties of the specimen comprisessubstantially simultaneously determining the first and second propertiesof the specimen.
 2901. The method of claim 2866, further comprisingdirecting energy toward multiple locations on the surface of thespecimen substantially simultaneously and detecting energy propagatingfrom the multiple locations substantially simultaneously such that oneor more of the at least two properties of the specimen can be determinedat the multiple locations substantially simultaneously.
 2902. The methodof claim 2866, wherein the stage and the measurement device are coupledto a process tool.
 2903. The method of claim 2866, wherein the stage andthe measurement device are coupled to a process tool, and wherein thestage and the measurement device are arranged laterally proximate to theprocess tool.
 2904. The method of claim 2866, wherein the stage and themeasurement device are coupled to a process tool, and wherein the stageand the measurement device are disposed within the process tool. 2905.The method of claim 2866, wherein the stage and the measurement deviceare coupled to a process tool, and wherein the process tool is selectedfrom the group consisting of an ion implanter and a thermal tool. 2906.The method of claim 2866, wherein the stage and the measurement deviceare coupled to a process tool, wherein the process tool comprises awafer handler, and wherein disposing the specimen upon the stagecomprises moving the specimen from the process tool to the stage usingthe wafer handler.
 2907. The method of claim 2866, wherein the stage andthe measurement device are coupled to a process tool, the method furthercomprising moving the specimen to the process tool subsequent to saiddirecting and said detecting using the stage.
 2908. The method of claim2866, wherein the stage and the measurement device are coupled to aprocess tool, the method further comprising determining at least the twoproperties of the specimen while the specimen is waiting between processsteps.
 2909. The method of claim 2866, wherein the stage and themeasurement device are coupled to a process tool, wherein the processtool comprises a support device configured to support the specimenduring a process step, and wherein an upper surface of the supportdevice is substantially parallel to an upper surface of the stage. 2910.The method of claim 2866, wherein the stage and the measurement deviceare coupled to a process tool, wherein the process tool comprises asupport device configured to support the specimen during a process step,and wherein an upper surface of the stage is angled with respect to anupper surface of the support device.
 2911. The method of claim 2866,wherein the stage and the measurement device are disposed within ameasurement chamber, and wherein the measurement chamber is coupled to aprocess tool.
 2912. The method of claim 2866, wherein the stage and themeasurement device are disposed within a measurement chamber, andwherein the measurement chamber is disposed within a process tool. 2913.The method of claim 2866, wherein the stage and the measurement deviceare disposed within a measurement chamber, and wherein the measurementchamber is arranged laterally proximate to a process chamber of aprocess tool.
 2914. The method of claim 2866, wherein the stage and themeasurement device are disposed within a measurement chamber, andwherein the measurement chamber is arranged vertically proximate to aprocess chamber of a process tool.
 2915. The method of claim 2866,wherein disposing the specimen upon the stage comprises disposing thespecimen upon a support device disposed within a process chamber of aprocess tool, and wherein the support device is configured to supportthe specimen during a process step.
 2916. The method of claim 2915,further comprising performing said directing and said detecting duringthe process step.
 2917. The method of claim 2916, further comprisingobtaining a signature characterizing the process step, wherein thesignature comprises at least one singularity representative of an end ofthe process step.
 2918. The method of claim 2916, further comprisingaltering a parameter of one or more instruments coupled to the processtool in response to at least one of the determined properties using anin situ control technique.
 2919. The method of claim 2866, furthercomprising moving the specimen from a first process chamber to a secondprocess chamber using the stage, wherein the first process chamber andthe second process chamber are disposed within a process tool.
 2920. Themethod of claim 2919, further comprising performing said directing andsaid detecting during said moving the specimen from the first processchamber to the second process chamber.
 2921. The method of claim 2866,further comprising comparing at least one of the determined propertiesof the specimen and determined properties of a plurality of specimens.2922. The method of claim 2866, further comprising comparing at leastone of the determined properties of the specimen to a predeterminedrange for the property.
 2923. The method of claim 2922, furthercomprising generating an output signal if at least one of the determinedproperties of the specimen are outside of the predetermined range forthe property.
 2924. The method of claim 2866, further comprisingaltering a sampling frequency of the measurement device in response toat least one of the determined properties of the specimen.
 2925. Themethod of claim 2866, further comprising altering a parameter of one ormore instruments coupled to the measurement device in response to atleast one of the determined properties using a feedback controltechnique.
 2926. The method of claim 2866, further comprising altering aparameter of one or more instruments coupled to the measurement devicein response to at least one of the determined properties using afeedforward control technique.
 2927. The method of claim 2866, furthercomprising generating a database, wherein the database comprises thedetermined first and second properties of the specimen, the methodfurther comprising calibrating the measurement device using thedatabase.
 2928. The method of claim 2866, further comprising generatinga database, wherein the database comprises the determined first andsecond properties of the specimen, the method further comprisingmonitoring output signals of the measurement device using the database.2929. The method of claim 2866, further comprising generating adatabase, wherein the database comprises the determined first and secondproperties of the specimen, and wherein the database further comprisesfirst and second properties of a plurality of specimens.
 2930. Themethod of claim 2929, wherein the first and second properties of theplurality of specimens are generated using a plurality of measurementdevices, the method further comprising calibrating the plurality ofmeasurement devices using the database.
 2931. The method of claim 2929,wherein the first and second properties of the plurality of specimensare generated using a plurality of measurement devices, the methodfurther comprising monitoring output signals of the plurality ofmeasurement devices using the database.
 2932. The method of claim 2866,wherein a stand alone system is coupled to the measurement device, themethod further comprising calibrating the stand alone system with acalibration standard and calibrating the measurement device with thestand alone system.
 2933. The method of claim 2866, wherein a standalone system is coupled to the measurement device and at least oneadditional measurement device, the method further comprising calibratingthe stand alone system with a calibration standard and calibrating themeasurement device an at least the one additional measurement devicewith the stand alone system.
 2934. The method of claim 2866, furthercomprising determining at least the two properties of the specimen atmore than one position on the specimen, wherein the specimen comprises awafer, the method further comprising altering at least one parameter ofone or more instruments coupled to a process tool in response to atleast one of the determined properties of the specimen at the more thanone position on the specimen to reduce within wafer variation of atleast one of the determined properties.
 2935. The method of claim 2866,further comprising altering a parameter of one or more instrumentscoupled to a process tool in response to at least one of the determinedproperties using a feedback control technique.
 2936. The method of claim2866, further comprising altering a parameter of one or more instrumentscoupled to a process tool in response to at least one of the determinedproperties using a feedforward control technique.
 2937. The method ofclaim 2866, further comprising monitoring a parameter of one or moreinstruments coupled to the process tool.
 2938. The method of claim 2937,further comprising determining a relationship between at least one ofthe determined properties and at least one of the monitored parameters.2939. The method of claim 2938, further comprising altering theparameter of the instrument in response to the relationship.
 2940. Themethod of claim 2866, further comprising altering a parameter of one ormore instruments coupled to each of a plurality of process tools inresponse to at least one of the determined properties.
 2941. The methodof claim 2866, wherein processing the one or more output signalscomprises: at least partially processing the one or more output signalsusing a local processor, wherein the local processor is coupled to themeasurement device; sending the partially processed one or more outputsignals from the local processor to a remote controller computer; andfurther processing the partially processed one or more output signalsusing the remote controller computer.
 2942. The method of claim 2941,wherein at least partially processing the one or more output signalscomprises determining the first and second properties of the specimen.2943. The method of claim 2941, wherein further processing the partiallyprocessed one or more output signals comprises determining the first andsecond properties of the specimen.
 2944. A computer-implemented methodfor controlling a system configured to determine at least two propertiesof a specimen during use, wherein the system comprises a measurementdevice, comprising: controlling the measurement device, wherein themeasurement device comprises an illumination system and a detectionsystem, and wherein the measurement device is coupled to a stage,comprising: controlling the illumination system to direct energy towarda surface of the specimen; controlling the detection system to detectenergy propagating from the surface of the specimen; and generating oneor more output signals responsive to the detected energy; and processingthe one or more output signals to determine a first property and asecond property of the specimen, wherein the first property comprises acharacteristic of an implanted region of the specimen, and wherein thesecond property comprises a presence of defects on the specimen. 2945.The method of claim 2944, further comprising controlling the stage,wherein the stage is configured to support the specimen.
 2946. Themethod of claim 2944, further comprising controlling the stage tolaterally move the stage during said directing energy and said detectingenergy.
 2947. The method of claim 2944, further comprising controllingthe stage to rotatably move the stage during said directing energy andsaid detecting energy.
 2948. The method of claim 2944, furthercomprising controlling the stage to laterally and rotatably move thestage during said directing energy and said detecting energy.
 2949. Themethod of claim 2944, wherein the illumination system comprises a singleenergy source.
 2950. The method of claim 2944, wherein the illuminationsystem comprises more than one energy source.
 2951. The method of claim2944, wherein the detection system comprises a single energy sensitivedevice.
 2952. The method of claim 2944, wherein the detection systemcomprises more than one energy sensitive devices.
 2953. The method ofclaim 2944, wherein the measurement device further comprises a modulatedoptical reflectometer.
 2954. The method of claim 2944, wherein themeasurement device further comprises an X-ray reflectance device. 2955.The method of claim 2944, wherein the measurement device furthercomprises an eddy current device.
 2956. The method of claim 2944,wherein the measurement device further comprises a photo-acousticdevice.
 2957. The method of claim 2944, wherein the measurement devicefurther comprises a spectroscopic ellipsometer.
 2958. The method ofclaim 2944, wherein the measurement device further comprises aspectroscopic reflectometer.
 2959. The method of claim 2944, wherein themeasurement device further comprises a dual beam spectrophotometer.2960. The method of claim 2944, wherein the measurement device furthercomprises a non-imaging scatterometer.
 2961. The method of claim 2944,wherein the measurement device further comprises a scatterometer. 2962.The method of claim 2944, wherein the measurement device furthercomprises a spectroscopic scatterometer.
 2963. The method of claim 2944,wherein the measurement device further comprises a reflectometer. 2964.The method of claim 2944, wherein the measurement device furthercomprises an ellipsometer.
 2965. The method of claim 2944, wherein themeasurement device further comprises a non-imaging bright field device.2966. The method of claim 2944, wherein the measurement device furthercomprises a non-imaging dark field device.
 2967. The method of claim2944, wherein the measurement device further comprises a non-imagingbright field and dark field device.
 2968. The method of claim 2944,wherein the measurement device further comprises a bright field imagingdevice.
 2969. The method of claim 2944, wherein the measurement devicefurther comprises a dark field imaging device.
 2970. The method of claim2944, wherein the measurement device further comprises a bright fieldand dark field imaging device.
 2971. The method of claim 2944, whereinthe measurement device further comprises at least a first measurementdevice and a second measurement device, and wherein the first and secondmeasurement devices are selected from the group consisting of amodulated optical reflectometer, an X-ray reflectance device, an eddycurrent device, a photo acoustic device, a spectroscopic ellipsometer, aspectroscopic reflectometer, dual beam spectrophotometer, a non-imagingscatterometer, a scatterometer, a spectroscopic scatterometer, areflectometer, an ellipsometer, a non-imaging bright field device, anon-imaging dark field device, a non-imaging bright field and dark fielddevice, a bright field imaging device, a dark field imaging device, anda bright field and dark field imaging device.
 2972. The method of claim2944, wherein the measurement device further comprises at least a firstmeasurement device and a second measurement device, and wherein opticalelements of the first measurement device comprise optical elements ofthe second measurement device.
 2973. The method of claim 2944, whereinthe measurement device further comprises non-optical components, andwherein controlling the detection system to detect energy comprisescontrolling the non-optical components to measure a non-opticalcharacteristic of the specimen.
 2974. The method of claim 2944, whereinthe characteristic of the implanted region is selected from the groupconsisting of a presence of ions in the implanted region, aconcentration of ions in the implanted region, a depth of the implantedregion, and a distribution profile of the implanted region.
 2975. Themethod of claim 2944, wherein the defects comprise micro defects andmacro defects.
 2976. The method of claim 2944, wherein the defectscomprises micro defects or macro defects.
 2977. The method of claim2944, further comprising: controlling the illumination system to directenergy toward a bottom surface of the specimen; and controlling thedetection system to detect energy propagating from the bottom surface ofthe specimen, wherein the second property further comprises a presenceof defects on the bottom surface of the specimen.
 2978. The method ofclaim 2977, wherein the defects comprise macro defects.
 2979. The methodof claim 2944, wherein processing the one or more output signals todetermine the first and second properties of the specimen comprisessubstantially simultaneously determining the first and second propertiesof the specimen.
 2980. The method of claim 2944, further comprisingcontrolling the illumination system to direct energy toward multiplelocations on the surface of the specimen substantially simultaneouslyand controlling the detection system to detect energy propagating fromthe multiple locations substantially simultaneously such that one ormore of the at least two properties of the specimen can be determined atthe multiple locations substantially simultaneously.
 2981. The method ofclaim 2944, wherein the stage and the measurement device are coupled toa process tool.
 2982. The method of claim 2944, wherein the stage andthe measurement device are coupled to a process tool, and wherein thestage and the measurement device are arranged laterally proximate to theprocess tool.
 2983. The method of claim 2944, wherein the stage and themeasurement device are coupled to a process tool, and wherein the stageand the measurement device are disposed within the process tool. 2984.The method of claim 2944, wherein the stage and the measurement deviceare coupled to a process tool, and wherein the process tool is selectedfrom the group consisting of an ion implanter and a thermal tool. 2985.The method of claim 2944, wherein the stage and the measurement deviceare coupled to a process tool, the method further comprising controllinga wafer handler to move the specimen from the process tool to the stage,and wherein the wafer handler is coupled to the process tool.
 2986. Themethod of claim 2944, wherein the stage and the measurement device arecoupled to a process tool, the method further comprising controlling thestage to move the specimen from the system to the process tool. 2987.The method of claim 2944, wherein the stage and the measurement deviceare coupled to a process tool, the method further comprising controllinga wafer handler to move the specimen from the process tool to the stagesuch that at least the two properties of the specimen can be determinedwhile the specimen is waiting between process steps.
 2988. The method ofclaim 2944, wherein the stage and the measurement device are coupled toa process tool, wherein the process tool comprises a support deviceconfigured to support the specimen during a process step, and wherein anupper surface of the support device is substantially parallel to anupper surface of the stage.
 2989. The method of claim 2944, wherein thestage and the measurement device are coupled to a process tool, whereinthe process tool comprises a support device configured to support thespecimen during a process step, and wherein an upper surface of thestage is angled with respect to an upper surface of the support device.2990. The method of claim 2944, wherein the stage and the measurementdevice are disposed within a measurement chamber, and wherein themeasurement chamber is coupled to a process tool.
 2991. The method ofclaim 2944, wherein the stage and the measurement device are disposedwithin a measurement chamber, and wherein the measurement chamber isdisposed within a process tool.
 2992. The method of claim 2944, whereinthe stage and the measurement device are disposed within a measurementchamber, and wherein the measurement chamber is arranged laterallyproximate to a process chamber of a process tool.
 2993. The method ofclaim 2944, wherein the stage and the measurement device are disposedwithin a measurement chamber, and wherein the measurement chamber isarranged vertically proximate to a process chamber of a process tool.2994. The method of claim 2944, further comprising disposing thespecimen upon a support device disposed within a process chamber of aprocess tool, and wherein the support device is configured to supportthe specimen during a process step.
 2995. The method of claim 2994,further comprising controlling the illumination system and controllingthe detection system during the process step.
 2996. The method of claim2994, further comprising controlling the system to obtain a signaturecharacterizing the process step, wherein the signature comprises atleast one singularity representative of an end of the process step.2997. The method of claim 2994, further comprising controlling thesystem to alter a parameter of one or more instruments coupled to theprocess tool in response to at least one of the determined propertiesusing an in situ control technique.
 2998. The method of claim 2944,further comprising controlling the stage to move the specimen from afirst process chamber to a second process chamber, wherein the firstprocess chamber and the second process chamber are disposed within aprocess tool.
 2999. The method of claim 2998, further comprisingcontrolling the illumination system and controlling the detection systemduring said moving the specimen from the first process chamber to thesecond process chamber.
 3000. The method of claim 2944, furthercomprising comparing at least one of the determined properties of thespecimen and determined properties of a plurality of specimens. 3001.The method of claim 2944, further comprising comparing at least one ofthe determined properties of the specimen to a predetermined range forthe property.
 3002. The method of claim 3001, further comprisinggenerating an output signal if at least one of the determined propertiesof the specimen are outside of the predetermined range for the property.3003. The method of claim 2944, further comprising altering a samplingfrequency of the measurement device in response to at least one of thedetermined properties of the specimen.
 3004. The method of claim 2944,further comprising altering a parameter of one or more instrumentscoupled to the measurement device in response to at least one of thedetermined properties using a feedback control technique.
 3005. Themethod of claim 2944, further comprising altering a parameter of one ormore instruments coupled to the measurement device in response to atleast one of the determined properties using a feedforward controltechnique.
 3006. The method of claim 2944, further comprising generatinga database, wherein the database comprises the determined first andsecond properties of the specimen, the method further comprisingcalibrating the measurement device using the database.
 3007. The methodof claim 2944, further comprising generating a database, wherein thedatabase comprises the determined first and second properties of thespecimen, the method further comprising monitoring output signals of themeasurement device using the database.
 3008. The method of claim 2944,further comprising generating a database, wherein the database comprisesthe determined first and second properties of the specimen, and whereinthe database further comprises first and second properties of aplurality of specimens.
 3009. The method of claim 3008, wherein thefirst and second properties of the plurality of specimens are generatedusing a plurality of measurement devices, the method further comprisingcalibrating the plurality of measurement devices using the database.3010. The method of claim 3008, wherein the first and second propertiesof the plurality of specimens are generated using a plurality ofmeasurement devices, the method further comprising monitoring outputsignals of the plurality of measurement devices using the database.3011. The method of claim 2944, wherein a stand alone system is coupledto the system, the method further comprising controlling the stand alonesystem to calibrate the stand alone system with a calibration standardand further controlling the stand alone system to calibrate the system.3012. The method of claim 2944, wherein a stand alone system is coupledto the system and at least one additional system, the method furthercomprising controlling the stand alone system to calibrate the standalone system with a calibration standard and further controlling thestand alone system to calibrate the system and at least the oneadditional system.
 3013. The method of claim 2944, wherein the system isfurther configured to determine at least the two properties of thespecimen at more than one position on the specimen, and wherein thespecimen comprises a wafer, the method further comprising altering atleast one parameter of one or more instruments coupled to a process toolin response to at least one of the determined properties of the specimenat the more than one position on the specimen to reduce within wafervariation of at least one of the determined properties.
 3014. The methodof claim 2944, further comprising altering a parameter of one or moreinstruments coupled to a process tool in response to at least one of thedetermined properties using a feedback control technique.
 3015. Themethod of claim 2944, further comprising altering a parameter of one ormore instruments coupled to a process tool in response to at least oneof the determined properties using a feedforward control technique.3016. The method of claim 2944, further comprising monitoring aparameter of one or more instruments coupled to the process tool. 3017.The method of claim 3016, further comprising determining a relationshipbetween at least one of the determined properties and at least one ofthe monitored parameters.
 3018. The method of claim 3017, furthercomprising altering a parameter of at least one of the instruments inresponse to the relationship.
 3019. The method of claim 2944, furthercomprising altering a parameter of one or more instruments coupled toeach of a plurality of process tools in response to at least one of thedetermined properties of the specimen.
 3020. The method of claim 2944,wherein processing the one or more output signals comprises: at leastpartially processing the one or more output signals using a localprocessor, wherein the local processor is coupled to the measurementdevice; sending the partially processed one or more output signals fromthe local processor to a remote controller computer; and furtherprocessing the partially processed one or more output signals using theremote controller computer.
 3021. The method of claim 3020, wherein atleast partially processing the one or more output signals comprisesdetermining the first and second properties of the specimen.
 3022. Themethod of claim 3020, wherein further processing the partially processedone or more output signals comprises determining the first and secondproperties of the specimen.
 3023. A semiconductor device fabricated by amethod, the method comprising: forming a portion of the semiconductordevice upon a specimen; disposing the specimen upon a stage, wherein thestage is coupled to a measurement device, and wherein the measurementdevice comprises an illumination system and a detection system;directing energy toward a surface of the specimen using the illuminationsystem; detecting energy propagating from the surface of the specimenusing the detection system; generating one or more output signalsresponsive to the detected energy; and processing the one or more outputsignals to determine a first property and a second property of thespecimen, wherein the first property comprises a characteristic of animplanted region of the specimen, and wherein the second propertycomprises a presence of defects on the specimen.
 3024. The device ofclaim 3023, wherein the illumination system comprises a single energysource.
 3025. The device of claim 3023, wherein the illumination systemcomprises more than one energy source.
 3026. The device of claim 3023,wherein the detection system comprises a single energy sensitive device.3027. The device of claim 3023, wherein the detection system comprisesmore than one energy sensitive devices.
 3028. The device of claim 3023,wherein the measurement device further comprises a modulated opticalreflectometer.
 3029. The device of claim 3023, wherein the measurementdevice further comprises an X-ray reflectance device.
 3030. The deviceof claim 3023, wherein the measurement device further comprises an eddycurrent device.
 3031. The device of claim 3023, wherein the measurementdevice further comprises a photo-acoustic device.
 3032. The device ofclaim 3023, wherein the measurement device further comprises aspectroscopic ellipsometer.
 3033. The device of claim 3023, wherein themeasurement device further comprises a spectroscopic reflectometer.3034. The device of claim 3023, wherein the measurement device furthercomprises a dual beam spectrophotometer.
 3035. The device of claim 3023,wherein the measurement device further comprises a non-imagingscatterometer.
 3036. The device of claim 3023, wherein the measurementdevice further comprises a scatterometer.
 3037. The device of claim3023, wherein the measurement device further comprises a spectroscopicscatterometer.
 3038. The device of claim 3023, wherein the measurementdevice further comprises a reflectometer.
 3039. The device of claim3023, wherein the measurement device further comprises an ellipsometer.3040. The device of claim 3023, wherein the measurement device furthercomprises a non-imaging bright field device.
 3041. The device of claim3023, wherein the measurement device further comprises a non-imagingdark field device.
 3042. The device of claim 3023, wherein themeasurement device further comprises a non-imaging bright field and darkfield device.
 3043. The device of claim 3023, wherein the measurementdevice further comprises a bright field imaging device.
 3044. The deviceof claim 3023, wherein the measurement device further comprises a darkfield imaging device.
 3045. The device of claim 3023, wherein themeasurement device further comprises a bright field and dark fieldimaging device.
 3046. The device of claim 3023, wherein the measurementdevice further comprises at least a first measurement device and asecond measurement device, and wherein the first and second measurementdevices are selected from the group consisting of a modulated opticalreflectometer, an X-ray reflectance device, an eddy current device, aphoto-acoustic device, a spectroscopic ellipsometer, a spectroscopicreflectometer, dual beam spectrophotometer, a non-imaging scatterometer,a scatterometer, a spectroscopic scatterometer, a reflectometer, anellipsometer, a non-imaging bright field device, a non-imaging darkfield device, a non-imaging bright field and dark field device, a brightfield imaging device, a dark field imaging device, and a bright fieldand dark field imaging device.
 3047. The device of claim 3023, whereinthe measurement device further comprises at least a first measurementdevice and a second measurement device, and wherein optical elements ofthe first measurement device comprise optical elements of the secondmeasurement device.
 3048. The device of claim 3023, wherein themeasurement device further comprises non-optical components, and whereindetecting energy comprises measuring a nonoptical characteristic of thespecimen.
 3049. The device of claim 3023, wherein the characteristic ofthe implanted region is selected from the group consisting of a presenceof ions in the implanted region, a concentration of ions in theimplanted region, a depth of the implanted region, and a distributionprofile of the implanted region.
 3050. The device of claim 3023, whereinthe defects comprise micro defects and macro defects.
 3051. The deviceof claim 3023, wherein the defects comprises micro defects or macrodefects.
 3052. The device of claim 3023, further comprising: directingenergy toward a bottom surface of the specimen; and detecting energypropagating from the bottom surface of the specimen, wherein the secondproperty further comprises a presence of defects on the bottom surfaceof the specimen.
 3053. The device of claim 3052, wherein the defectscomprise macro defects.
 3054. The device of claim 3023, wherein thestage and the measurement device are coupled to a process tool. 3055.The device of claim 3023, wherein the stage and the measurement deviceare coupled to a process tool, and wherein the process tool is selectedfrom the group consisting of an ion implanter and a thermal tool. 3056.A method for fabricating a semiconductor device, comprising: forming aportion of the semiconductor device upon a specimen; disposing thespecimen upon a stage, wherein the stage is coupled to a measurementdevice, and wherein the measurement device comprises an illuminationsystem and a detection system; directing energy toward a surface of thespecimen using the illumination system; detecting energy propagatingfrom the surface of the specimen using the detection system; generatingone or more output signals responsive to the detected energy; andprocessing the one or more output signals to determine a first propertyand a second property of the specimen, wherein the first propertycomprises a characteristic of an implanted region of the specimen, andwherein the second property comprises a presence of defects on thespecimen.
 3057. The method of claim 3056, wherein the illuminationsystem comprises a single energy source.
 3058. The method of claim 3056,wherein the illumination system comprises more than one energy source.3059. The method of claim 3056, wherein the detection system comprises asingle energy sensitive device.
 3060. The method of claim 3056, whereinthe detection system comprises more than one energy sensitive devices.3061. The method of claim 3056, wherein the measurement device isselected from the group consisting of a modulated optical reflectometer,an X-ray reflectance device, an eddy current device, a photo-acousticdevice, a spectroscopic ellipsometer, a spectroscopic reflectometer,dual beam spectrophotometer, a non-imaging scatterometer, ascatterometer, a spectroscopic scatterometer, a reflectometer, anellipsometer, a non-imaging bright field device, a non-imaging darkfield device, a non-imaging bright field and dark field device, a brightfield imaging device, a dark field imaging device, and a bright fieldand dark field imaging device.
 3062. The method of claim 3056, whereinthe measurement device further comprises at least a first measurementdevice and a second measurement device, and wherein the first and secondmeasurement devices are selected from the group consisting of amodulated optical reflectometer, an X-ray reflectance device, an eddycurrent device, a photo-acoustic device, a spectroscopic ellipsometer, aspectroscopic reflectometer, dual beam spectrophotometer, a non-imagingscatterometer, a scatterometer, a spectroscopic scatterometer, areflectometer, an ellipsometer, a non-imaging bright field device, anon-imaging dark field device, a non-imaging bright field and dark fielddevice, a bright field imaging device, a dark field imaging device, anda bright field and dark field imaging device.
 3063. The method of claim3056, wherein the measurement device further comprises at least a firstmeasurement device and a second measurement device, and wherein opticalelements of the first measurement device comprise optical elements ofthe second measurement device.
 3064. The method of claim 3056, whereinthe measurement device further comprises non-optical components, andwherein detecting energy comprises measuring a nonoptical characteristicof the specimen.
 3065. The method of claim 3056, wherein thecharacteristic of the implanted region is selected from the groupconsisting of a presence of ions in the implanted region, aconcentration of ions in the implanted region, a depth of the implantedregion, and a distribution profile of the implanted region.
 3066. Themethod of claim 3056, wherein the defects comprise micro defects andmacro defects.
 3067. The method of claim 3056, wherein the defectscomprises micro defects or macro defects.
 3068. The method of claim3056, further comprising: directing energy toward a bottom surface ofthe specimen; and